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At least 595 records · Page 33
All sourcesNASA NTRSDOE OSTI
DOE OSTI2011

Correlation between resistance-change effect in transition-metal oxides and secondary-electron contrast of scanning electron microscope images

Conductive atomic-force microscopy (C-AFM) writing is attracting attention as a technique for clarifying the switching mechanism of resistive random-access memory by providing a wide area filled with filaments, which can be regarded as one filament with large radius. The writing area on a nickel-oxide (NiO) film formed by conductive atomic-force microscopy was observed by scanning electron microscope, and a correlation between the contrast in a secondary-electron image (SEI) and the resistance written by C-AFM was revealed. In addition, the dependence of the SEI contrast on the beam accelerating voltage (V{sub accel}) suggests that the resistance-change effect occurs near the surface of the NiO film. As for the effects of electron irradiation and vacuum annealing on the C-AFM writing area, it was shown that the resistance-change effect is caused by exchange of oxygen with the atmosphere at the surface of the NiO film. This result suggests that the low-resistance and high-resistance areas are, respectively, p-type Ni{sub 1+{delta}}O ({delta} < 0) and insulating (stoichiometric) or n-type Ni{sub 1+{delta}}O ({delta}{>=} 0).

36 MATERIALS SCIENCE↗
DOE OSTI2013

Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition

ZnO films deposited by plasma-enhanced atomic layer deposition (PEALD) have been used to investigate resistive memory behavior. The bipolar resistance switching properties were observed in the Al/PEALD-ZnO/Pt devices. The resistance ratio for the high and low resistance states (HRS/LRS) is more than 10{sup 3}, better than ZnO devices deposited by other methods. The dominant conduction mechanisms of HRS and LRS are trap-controlled space charge limited current and Ohmic behavior, respectively. The resistive switching behavior is induced upon the formation/disruption of conducting filaments. This study demonstrated that the PEALD-ZnO films have better properties for the application in 3D resistance random access memory.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Bipolar resistive switching properties of Ti-CuO/(hexafluoro-hexa-peri-hexabenzocoronene)-Cu hybrid interface device: Influence of electronic nature of organic layer

This study reports the change in the structural and junction properties of Ti-CuO-Cu structure on incorporation of a 2-dimensional (2D) organic layer comprising of n-type hexafluoro-hexa-peri-hexabenzocoronene (6F-HBC). A bipolar resistive switching is observed in the device having interface between sputter deposited copper oxide (CuO) and vacuum sublimated 6F-HBC hybrid interface. The CuO/6F-HBC hybrid interface exhibits rectifying I-V characteristics in complete contrast to the ohmic and rectifying characteristics of junctions based on individual 6F-HBC and CuO layers. Large change in resistive switching property from unipolar resistive switching in CuO/HBC to bipolar resistive switching in CuO/6F-HBC interface was observed. At the CuO/6F-HBC interface, C1s peak corresponding to fluorinated carbon is shifted by 0.68 eV towards higher binding energy (BE) side and O1s peak due to non-lattice oxygen is shifted by 0.6 eV towards lower BE, confirming the interaction of O{sup 2-} ion in CuO with fluorinated carbon atoms in 6F-HBC at the hybrid interface. Correlation between conductive atomic force microscopy images and atomic force microscopy topography images, I-V characteristics in conducting, non-conducting, and pristine regions along with x-ray photoelectron spectroscopy results establishes the important role of hybrid interface to determining the resistive switching properties. This study demonstrates that the resistive switching and interface properties of a hybrid device based on inorganic and organic 2D materials can be modified by changing the electronic properties of organic layer by attaching suitable functional groups.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Observation of rebirth of metallic paths during resistance switching of metal nanowire

To clarify the mechanism of resistance-switching phenomena, we have investigated the change in the electronic structure of a Ni nanowire device during resistance-switching operations using scanning photoelectron microscopy techniques. We directly observed the disappearance of density of state (DOS) at the Fermi level (E{sub F}) in a high-resistance state and recovery of a finite DOS at E{sub F} in a low-resistance state. These results are direct evidence that the Ni nanowire is fully oxidized after switching to the high-resistance state and that Ni-metal conductive paths in the oxidized nanowire are recovered in the low-resistance state.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2013

Magnetic manipulation by resistance switching in CeO{sub 2}/PrBa{sub 2}Cu{sub 3}O{sub 7−δ}/Pt heterostructure: The role of oxygen vacancies

Pronounced bipolar resistance switching with a good retention property has been observed in CeO{sub 2}/PrBa{sub 2}Cu{sub 3}O{sub 7−δ}/Pt heterostructure. The low resistance state and high resistance state exhibited distinguished ferromagnetic signals, as compared to the nearly non-magnetic initial state. It is found that the migration of the oxygen vacancies under electric field is mainly responsible for the electric and the magnetic changes. The modified interfacial electronic structure by the oxygen vacancy migration and the trapping/detrapping of the carriers leads to the resistance switching. The exchange interaction of the hydrogen-like orbitals formed around the singly occupied oxygen vacancies in CeO{sub 2} is accounting for the emerged and modulated ferromagnetic signals. Temperature dependence of resistance in the low resistance state follows a variable range hopping law, further confirming that the amount of oxygen vacancies in the CeO{sub 2} layer directly affects the hydrogen-like orbital radius, which determines the strength of the ferromagnetic coupling.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Resistive switching in doped BiFeO{sub 3} films

Polycrystalline Bi{sub 0.9}Sr{sub 0.1}FeO{sub 3} and Bi{sub 0.9}Ca{sub 0.1}Fe{sub 0.9}Co{sub 0.1}O{sub 3} films (BXFO) were synthesized by sol-gel spin coating method. Local resistive switching behavior was investigated. Bipolar resistive switching characteristics were clearly observed in both two samples. However, for the Bi{sub 0.9}Sr{sub 0.1}FeO{sub 3} film, the switching from the low resistance (LRS) to the high resistance (HRS) occurred at positive bias and the switching from the HRS to the LRS at negative bias. On the contrary, the resistance of Bi{sub 0.9}Ca{sub 0.1}Fe{sub 0.9}Co{sub 0.1}O{sub 3} film was switched from the LRS to the HRS when a negative bias was applied. Possible mechanisms for both resistive switching forms were discussed on the basis of the Schottky-like barrier.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Metal-insulator transition upon heating and negative-differential-resistive-switching induced by self-heating in BaCo{sub 0.9}Ni{sub 0.1}S{sub 1.8}

The layered compound BaCo{sub 1−x}Ni{sub x}S{sub 2−y} (0.05 < x < 0.2 and 0.05 < y < 0.2) exhibits an unusual first-order structural and electronic phase transition from a low-T monoclinic paramagnetic metal to a high-T tetragonal antiferromagnetic insulator around 200 K with huge hysteresis (∼40 K) and large volume change (∼0.01). Here, we report on unusual voltage-controlled resistive switching followed by current-controlled resistive switching induced by self-heating in polycrystalline BaCo{sub 1−x}Ni{sub x}S{sub 2−y} (nominal x = 0.1 and y = 0.2). These were due to the steep metal to insulator transition upon heating followed by the activated behavior of the resistivity above the transition. The major role of Joule heating in switching is supported by the absence of nonlinearity in the current as function of voltage, I(V), obtained in pulsed measurements, in the range of electric fields relevant to d.c. measurements. The voltage-controlled negative differential resistance around the threshold for switching was explained by a simple model of self-heating. The main difficulty in modeling I(V) from the samples resistance as function of temperature R(T) was the progressive increase of R(T), and to a lesser extend the decrease of the resistance jumps at the transitions, caused by the damage induced by cycling through the transitions by heating or self-heating. This was dealt with by following systematically R(T) over many cycles and by using the data of R(T) in the heating cycle closest to that of the self-heating one.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Bipolar resistance switching in Pt/CuO x /Pt via local electrochemical reduction

We investigated the local changes in copper oxidation state and the corresponding resistance changes in Pt/CuO x /Pt nanoscale heterostructures using x-ray nanoprobe spectro-microscopy and current-voltage characterization. After gentle electroforming, during which the current-voltage behavior remains non-linear, the low resistance state was reached, and we also observed regions of 160 nm width that show an increase in Cu K-alpha fluorescence intensity, indicative of partial reduction of the CuO x . Analysis of the current voltage curves showed that the dominant conduction mechanism is Schottky emission and that the resistance state is correlated with the Schottky barrier height. We also propose that the reversible resistivity change in these Pt/CuO x /Pt heterostructures occurs through local electrochemical reduction leading to change of the Schottky barrier height at the interface between Pt and the reduced CuO x layers and to change of the CuO x resistivity within laterally confined portions of the CuO x layer. Our experiments reveal important insights into the mechanism of resistance switching of Pt/CuO x /Pt performed in a current and voltage regime that does not create a metallic conduction path.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Method for characterizing the contact resistance of metal-vanadium dioxide thin film interfaces

The standard method for determining the contact resistance of planar metal-semiconductor interfaces can underestimate the true contact resistance under normal operating conditions, as it relies on the resistivity of the semiconductor material remaining constant during measurement. However, the strong temperature dependence of the resistivity of VO{sub 2} requires a modified approach that maintains a constant power density dissipated within the film to account for Joule heating. We develop a method for measuring contact resistance in semiconductors with a high thermal coefficient of resistivity, demonstrate this method with an example, and compare the results with the standard technique.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Origins of effective resistivity in collisionless magnetic reconnection

The mechanisms that provide effective resistivity for supporting collisonless magnetic reconnection have remained unsettled despite numerous studies. Some of these studies demonstrated that the electron pressure nongyrotropy generates the resistivity (η{sub npg}) in the electron diffusion region (EDR). We derive an analytical relation for the effective resistivity (η{sub kin}) by momentum balance in a control volume in the EDR. Both η{sub npg} and η{sub kin} mutually compare well and they also compare well with the resistivity required to support reconnection electric field E{sub rec} in multi-dimensional particle-in-cell simulations as well as in satellite observations when reconnection occurs in an EDR. But they are about an order of magnitude or so smaller than that required when the reconnection occurred in a much wider reconnecting current sheet (RCS) of half width (w) of the order of the ion skin depth (d{sub i}), observed in the Earth magnetosphere. The chaos-induced resistivity reported in the literature is found to be even more deficient. We find that for reconnection in RCS with w ∼ d{sub i}, anomalous diffusion, such as the universal Bhom diffusion and/or that arising from kinetic Alfven waves, could fairly well account for the required resistivity.

58 GEOSCIENCES↗
DOE OSTI2014

One-step patterning of double tone high contrast and high refractive index inorganic spin-on resist

A direct one-step and low temperature micro-fabrication process, enabling to realize large area totally inorganic TiO₂ micro-patterns from a spin-on resist, is presented. High refractive index structures (up to 2 at 632 nm) without the need for transfer processes have been obtained by mask assisted UV lithography, exploiting photocatalytic titania properties. A distinctive feature not shared by any of the known available resists and boosting the material versatility, is that the system behaves either as a positive or as negative tone resist, depending on the process parameters and on the development chemistry. In order to explain the resist double tone behavior, deep comprehension of the lithographic process parameters optimization and of the resist chemistry and structure evolution during the lithographic process, generally uncommon in literature, is reported. Another striking property of the presented resist is that the negative tone shows a high contrast up to 19, allowing to obtain structures resolution down to 2 μm wide. The presented process and material permit to directly fabricate different titania geometries of great importance for solar cells, photo-catalysis, and photonic crystals applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiN{sub x}/SiN{sub y} multilayers

Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiN{sub x}/SiN{sub y} multilayers with high on/off ratio of 10{sup 9}. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Resistive switching behavior of RF magnetron sputtered ZnO thin films

The resistive switching characteristics of RF magnetron sputtered zinc oxide thin films have been studied. The x-ray diffraction studies confirm the formation of crystalline ZnO on Pt/TiO{sub 2}/SiO{sub x}/Si substrate. We have fabricated Cu/ZnO/Pt device using a shadow masking technique for resistive switching study. Our Cu/ZnO/Pt device exhibits a unipolar resistive switching behaviour. The switching observed in our device could be related to oxygen vacancies or Cu ions that generate the conducting filaments responsible for resistive switching. We found HRS to LRS resistance ratio of as high as ∼200 for our Cu/ZnO/Pt device. The higher resistance ratio and stability of Cu/ZnO/Pt device would make our RF magnetron sputtered zinc oxide thin films suitable for non volatile memory applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Investigation of the effect of resistivity on scrape off layer filaments using three-dimensional simulations

The propagation of filaments in the Scrape Off Layer (SOL) of tokamaks largely determines the plasma profiles in the region. In a conduction limited SOL, parallel temperature gradients are expected, such that the resistance to parallel currents is greater at the target than further upstream. Since the perpendicular motion of an isolated filament is largely determined by balance of currents that flow through it, this may be expected to affect filament transport. 3D simulations have thus been used to study the influence of enhanced parallel resistivity on the dynamics of filaments. Filaments with the smallest perpendicular length scales, which were inertially limited at low resistivity (meaning that polarization rather than parallel currents determines their radial velocities), were unaffected by resistivity. For larger filaments, faster velocities were produced at higher resistivities due to two mechanisms. First parallel currents were reduced and polarization currents were enhanced, meaning that the inertial regime extended to larger filaments, and second, a potential difference formed along the parallel direction so that higher potentials were produced in the region of the filament for the same amount of current to flow into the sheath. These results indicate that broader SOL profiles could be produced at higher resistivities.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2016

Effect of various sintering temperature on resistivity behaviour and magnetoresistance of La{sub 0.67}Ba{sub 0.33}MnO{sub 3}

A detail work was conducted in order to investigate effect of various sintering temperature on resistivity behavior and its relation with the magneto-resistance effect of La{sub 0.67}Ba{sub 0.33}MnO{sub 3} (LBMO). The LBMO samples were synthesized using solid state reaction. Characterization using X-ray diffraction shows that all LBMO samples have a single phase for each variation. Variation of sintering temperature on the LBMO samples affects its lattice parameters. The resistivity measurement in an absence and under applied magnetic field resulted in a highly significant different values. In one of the sintering temperature variation of LBMO, an increasing resistivity had shown at a low temperature and had reached its maximum value at a specific temperature, and then the resistivity decreases to the lowest value near the room temperature. Similar result observed at higher varieties of sintering temperature but with significant lower maximum resistivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Temperature-dependent resistance switching in SrTiO{sub 3}

Resistance switching phenomena were studied by varying temperature in SrTiO{sub 3} single crystal. The resistance hysteresis loops appear at a certain temperature ranging from 340 K to 520 K. With the assistance of 375 nm ultraviolet continuous laser, the sample resistance is greatly reduced, leading to a stable effect than that in dark. These resistance switching phenomena only exist in samples with enough oxygen vacancies, which is confirmed by spherical aberration-corrected scanning transmission electron microscopy measurements, demonstrating an important role played by oxygen vacancies. At temperatures above 340 K, positively charged oxygen vacancies become mobile triggered by external electric field, and the resistance switching effect emerges. Our theoretical results based on drift-diffusion model reveal that the built-in field caused by oxygen vacancies can be altered under external electric field. Therefore, two resistance states are produced under the cooperative effect of built-in field and external field. However, the increasing mobility of oxygen vacancies caused by higher temperature promotes internal electric field to reach equilibrium states quickly, and suppresses the hysteresis loops above 420 K.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

On the origin of resistive switching volatility in Ni/TiO{sub 2}/Ni stacks

Resistive switching and resistive random access memories have attracted huge interest for next generation nonvolatile memory applications, also thought to be able to overcome flash memories limitations when arranged in crossbar arrays. A cornerstone of their potential success is that the toggling between two distinct resistance states, usually a High Resistive State (HRS) and a Low Resistive State (LRS), is an intrinsic non-volatile phenomenon with the two states being thermodynamically stable. TiO{sub 2} is one of the most common materials known to support non-volatile RS. In this paper, we report a volatile resistive switching in a titanium dioxide thin film sandwiched by two nickel electrodes. The aim of this work is to understand the underlying physical mechanism that triggers the volatile effect, which is ascribed to the presence of a NiO layer at the bottom interface. The NiO layer alters the equilibrium between electric field driven filament formation and thermal enhanced ion diffusion, resulting in the volatile behaviour. Although the volatility is not ideal for non-volatile memory applications, it shows merit for access devices in crossbar arrays due to its high LRS/HRS ratio, which are also briefly discussed.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Passivation, conductivity, and selectivity in solar cell contacts: Concepts and simulations based on a unified partial-resistances framework

Passivation, conductivity, and selectivity are often acknowledged as the three requirements for optimal contacts to photovoltaic solar cells. Although there are generally accepted definitions and metrics for passivation and conductivity, a common understanding of the concept of selectivity is emerging only now. In this contribution, we present a generalized model of solar cell contacts based on the distinct lumped resistances encountered by electrons and holes traversing a contact, which we refer to as partial specific contact resistances. The relations between electron and hole partial current densities, quasi-Fermi level separation, and external voltage are derived from these partial specific contact resistances, leading to simple metrics for the aforementioned contact properties: the sum of the electron and hole resistances is a metric for passivation, their ratio is a metric for selectivity, and the majority-carrier resistance is a metric for conductivity. Using PC1D, we validate our model by simulating 10 500 cases of homojunction contacts to crystalline silicon solar cells, although our framework is material agnostic and can be equally applied to any other type of absorber. In these simulations, the hole contact and absorber are assumed to be ideal, whereas we vary the partial specific contact resistances in the electron contact by orders of magnitude by adjusting the electron and hole mobilities, their densities (through variations of the donor doping density), and the contact thickness. The simulations confirm the finding of the model that, when the contact fraction cannot be adjusted—as is the case with full-area contacts—combined passivation and conductivity are necessary and sufficient for optimal solar cell performance, and they imply selectivity. However, the reciprocal is not true: contacts can be selective but lack conductivity—causing a deleterious drop in fill factor—or can be selective but provide poor passivation—leading to a reduction in implied open-circuit voltage and, hence, actual open-circuit voltage. Furthermore, selectivity is a meaningful metric in the sole case of partial-area contacts, where the contact fraction can be adjusted arbitrarily.

14 SOLAR ENERGY↗