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At least 595 records · Page 33

Instrumentation for In situ/Operando X-ray Scattering Studies of Polymer Additive Manufacturing Processes

With new opportunities and challenges from additive manufacturing (AM), novel characterization approaches are needed to realize reliable and industry-transferrable material systems and processes. The Complex Scattering Program at the National Synchrotron Light Source II (NSLS-II), a Department of Energy (DOE) Office of Science User Research Facility located at Brookhaven National Laboratory, has capabilities on three beamlines to support in situ and operando soft material additive manufacturing measurements. In this article, we describe some of the additive manufacturing capabilities that have been implemented on these beamlines, including in-line 3D printers for Continuous-flow Direct Writing (CDW), Fused Filament Fabrication (FFF) printing, and an instrument for Electrospray Deposition (ESD). We also describe a development program in autonomous experimentation that will be critical for addressing the complexity involved in optimizing additive manufacturing processes and materials.

36 MATERIALS SCIENCE↗

Electrochemical studies of thin films of conducting polymers and conducting polymer composites deposited on metal and semiconductor electrodes

Electrochemical studies indicate that poly(Isothianaphthene) or PITN, can be p-doped only. Electrochemical properties of PITN and Nafion-PITN in acetonitrile solutions containing tetra-phenyl Phosphonium chloride as supporting electrolyte are compared. In both cases, the electrochemical behavior of thin films are different from that of thick films. In addition, Nafion does not seem to alter the electrochemical properties of PITN. Cyclic voltammetric and chronocoulometric measurements were made to compute the diffusion coefficient of the counter ions. Electrochemical behavior of both PITN and Nafion-PITN in acetonitrile solution containing different counter ions are described. PITN, when electrochemically deposited, apparently neither passivates surface states present nor forms ohmic contacts with p-Si or p(+)Si single-crystal electrodes.

Nagasubramanian, G.↗