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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 595 records · Page 33
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Continuous recoil-driven lasing and cavity frequency pinning with laser-cooled atoms

Abstract Laser-cooled gases of atoms interacting with the field of an optical cavity are a versatile tool for quantum sensing and the simulation of quantum systems. These systems can exhibit phenomena such as self-organization phase transitions, lasing mechanisms, squeezed states and protection of quantum coherence. However, investigations of these phenomena typically occur in a discontinuous manner due to the need to reload atomic ensembles. Here we demonstrate hours-long continuous lasing from laser-cooled 88 Sr atoms loaded into a ring cavity. The required inversion to produce lasing arises from inversion in the atomic-momentum degrees of freedom, which is linked to the self-organization phase transitions and collective atomic recoil lasing observed previously only in a cyclic fashion. We find that over a broad parameter range, the sensitivity of the lasing frequency to changes in cavity frequency is significantly reduced due to an atomic loss mechanism, suggesting a potential approach for mitigating low-frequency cavity noise. Our findings open opportunities for continuous cavity quantum electrodynamics experiments and robust and continuous super-radiant lasers.

Schäfer, Vera M. (ORCID:0000000210003737)↗
DOE OSTI2013

Diagnosis of ion velocity distribution from pin to plate geometry in atmospheric argon dielectric barrier discharge

A new method, fast Fourier transform, is presented to calculate ion velocity distribution by analyzing electromagnetic radiation signal from plasma. This method is based on a dipole model that does not require the assumption of thermodynamic equilibrium. To understand the discharge evolution, the ion velocity distribution is calculated in different oscillation cycles. Results show that the ion velocity distribution deviates from Maxwell distribution over time. The ion velocity and relative ion number fluctuate regularly with time.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

Franz-Keldysh effect in GeSn pin photodetectors

The optical properties and the Franz-Keldysh effect at the direct band gap of GeSn alloys with Sn concentrations up to 4.2% at room temperature were investigated. The GeSn material was embedded in the intrinsic region of a Ge heterojunction photodetector on Si substrates. The layer structure was grown by means of ultra-low temperature molecular beam epitaxy. The absorption coefficient as function of photon energy and the direct bandgap energies were determined. In all investigated samples, the Franz-Keldysh effect can be observed. A maximum absorption ratio of 1.5 was determined for 2% Sn for a voltage swing of 3 V.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Effect of manganese doping of BaSrTiO{sub 3} on diffusion and domain wall pinning

In the present paper, the influence of manganese doping on the dielectric properties of BaSrTiO{sub 3} thin films is presented. The real and imaginary parts of the material's permittivity have been measured in a large frequency range (100 Hz–1 MHz) and as a function of the electric field. The tunability and the figure of merit of the material have been obtained from the measurement of the permittivity under an applied DC bias electric field. For the undoped material, the dielectric losses become important for a large DC bias which leads to breakdown. At a suitable dopant rate, this effect disappears. In order to better understand the origin of the related phenomena, we measure the permittivity as a function of the AC excitation amplitude and we decompose the obtained permittivity with the hyperbolic law. This enables to extract the different contributions of the bulk (low frequency diffusion and high frequency lattice relaxation) and of the domain wall motions (vibration and pinning/unpinning) to the material's dielectric permittivity and to understand the effect of manganese doping on each contribution. Knowledge of the related mechanisms allows us to establish the optimum dopant rate (mainly conditioned by the lattice contribution) and to reduce the domain wall motion, which finally is beneficial for the desired properties of the ferroelectric thin film. A particular attention is paid to low frequency diffusion, an especially harmful effect when a DC biasing is mandatory (tunable electronic component in mobile telecommunication devices for example)

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Residual tensile stress in robust insulating rhombohedral Bi{sub 1−x}La{sub x}Fe{sub 1−y}Ti{sub y}O{sub 3} multiferroic ceramics and its ability to pin ferroelectric polarization switching

Robust insulating rhombohedral Bi{sub 1−x}La{sub x}Fe{sub 1−y}Ti{sub y}O{sub 3} multiferroic ceramics with 0.02 ≤ x ≤ 0.12 and 0.01 ≤ y ≤ 0.08 are prepared by a refined solid-state reaction electroceramic processing. Residual internal tensile stresses existed in the ceramics according to unit cell volume enlargement observed by X-ray diffraction and frequency redshifts of Raman modes related to Bi motion and oxygen octahedral rotation detected by Raman scattering measurements. Residual internal tensile stresses in the ceramics are believed to originate from structural phase transitions through an intermediate paraelectric rhombohedral phase with a negative thermal expansion coefficient in the transformation from paraelectric cubic to ferroelectric rhombohedral phases. All of the rhombohedral Bi{sub 1−x}La{sub x}Fe{sub 1−y}Ti{sub y}O{sub 3} ceramics exhibited a pinched polarization versus electric field hysteresis loop indicative of ferroelectric subswitching. We argue that the residual internal tensile stresses are responsible for such ferroelectric polarization subswitching behavior in the Bi{sub 1−x}La{sub x}Fe{sub 1−y}Ti{sub y}O{sub 3} ceramics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Role of the antiferromagnetic pinning layer on spin wave properties in IrMn/NiFe based spin-valves

Brillouin light scattering (BLS) was exploited to study the spin wave properties of spin-valve (SV) type samples basically consisting of two 5 nm-thick NiFe layers (separated by a Cu spacer of 5 nm), differently biased through the interface exchange coupling with an antiferromagnetic IrMn layer. Three samples were investigated: a reference SV sample, without IrMn (reference); one sample with an IrMn underlayer (10 nm thick) coupled to the bottom NiFe film; one sample with IrMn underlayer and overlayer of different thickness (10 nm and 6 nm), coupled to the bottom and top NiFe film, respectively. The exchange coupling with the IrMn, causing the insurgence of the exchange bias effect, allowed the relative orientation of the NiFe magnetization vectors to be controlled by an external magnetic field, as assessed through hysteresis loop measurements by magneto-optic magnetometry. Thus, BLS spectra were acquired by sweeping the magnetic field so as to encompass both the parallel and antiparallel alignment of the NiFe layers. The BLS results, well reproduced by the presented theoretical model, clearly revealed the combined effects on the spin dynamic properties of the dipolar interaction between the two NiFe films and of the interface IrMn/NiFe exchange coupling.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Double-pinned magnetic tunnel junction sensors with spin-valve-like sensing layers

MgO magnetic tunnel junction (MTJ) sensors with spin-valve-like sensing layers of Ir{sub 22}Mn{sub 78} (6)/Ni{sub 80}Fe{sub 20} (t{sub NiFe} = 20–70)/Ru (0.9)/Co{sub 40}Fe{sub 40}B{sub 20} (3) (unit: nm) have been fabricated. A linear field dependence of magnetoresistance for these MTJ sensors was obtained by carrying out a two-step field annealing process. The sensitivity and linear field range can be tuned by varying the thickness of NiFe layer and annealing temperature, and a high sensitivity of 37%/mT has been achieved in the MTJ sensors with 70 nm NiFe at the optimum annealing temperature of 230 °C. Combining the spin-valve-like sensing structure and a soft magnetic NiFe layer, MTJ sensors with relatively wide field sensing range have been achieved and could be promising for showing high sensitivity magnetic field sensing applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Model of Ni-63 battery with realistic PIN structure

GaN, with its wide bandgap of 3.4 eV, has emerged as an efficient material for designing high-efficiency betavoltaic batteries. An important part of designing efficient betavoltaic batteries involves a good understanding of the full process, from the behavior of the nuclear material and the creation of electron-hole pairs all the way through the collection of photo-generated carriers. This paper presents a detailed model based on Monte Carlo and Silvaco for a GaN-based betavoltaic battery device, modeled after Ni-63 as an energy source. The accuracy of the model is verified by comparing it with experimental values obtained for a GaN-based p-i-n structure under scanning electron microscope illumination.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Thin Co/Ni-based bottom pinned spin-transfer torque magnetic random access memory stacks with high annealing tolerance

Spin-transfer torque magnetic random access memory (STT-MRAM) is considered as a replacement for next generation embedded and stand-alone memory applications. One of the main challenges in the STT-MRAM stack development is the compatibility of the stack with CMOS process flows in which thermal budgets up to 400 °C are applied. In this letter, we report on a perpendicularly magnetized MgO-based tunnel junction (p-MTJ) on a thin Co/Ni perpendicular synthetic antiferromagnetic layer with high annealing tolerance. Tunnel magneto resistance (TMR) loss after annealing occurs when the reference layer loses its perpendicular magnetic anisotropy due to reduction of the CoFeB/MgO interfacial anisotropy. A stable Co/Ni based p-MTJ stack with TMR values of 130% at resistance-area products of 9 Ω μm{sup 2} after 400 °C anneal is achieved via moment control of the Co/Ta/CoFeB reference layer. Thinning of the CoFeB polarizing layer down to 0.8 nm is the key enabler to achieve 400 °C compatibility with limited TMR loss. Thinning the Co below 0.6 nm leads to a loss of the antiferromagnetic interlayer exchange coupling strength through Ru. Insight into the thickness and moment engineering of the reference layer is displayed to obtain the best magnetic properties and high thermal stability for thin Co/Ni SAF-based STT-MRAM stacks.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Spin-torque driven magnetization switching in ferromagnetic nanopillar with pinned layer biasing configuration

Magnetization switching driven by spin transfer torque in a ferromagnetic nanopillar by biasing the angular polarizer with different orientation has been studied. The free layer dynamics includes the spin torque from the oscillating free layer with magneto crystalline anisotropy and shape anisotropy, which is governed by the Landau-Lifshitsz-Gilbert-Slonczweski (LLGS) equation and solving it numerically by using embedded Runge Kutta fourth order method. Results of numerical simulation shows that there is a drastic reduction of switching time in the free layer by the orientation of angular polarizer of the nano pillar device. We fixed the angular polarizer as 0°, 30°, 60°, 90° and the corresponding switching time is 6.53 ns, 4.36 ns, 2.25 ns and 1.21 ns respectively for an applied current density of 5 × 10{sup 11} Am{sup −2}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Pinning down high-performance Cu-chalcogenides as thin-film solar cell absorbers: A successive screening approach

Photovoltaic performances of Cu-chalcogenides solar cells are strongly correlated with the absorber fundamental properties such as optimal bandgap, desired band alignment with window material, and high photon absorption ability. According to these criteria, we carry out a successive screening for 90 Cu-chalcogenides using efficient theoretical approaches. Besides the well-recognized CuInSe{sub 2} and Cu{sub 2}ZnSnSe{sub 4} materials, several novel candidates are identified to have optimal bandgaps of around 1.0–1.5 eV, spike-like band alignments with CdS window layer, sharp photon absorption edges, and high absorption coefficients. These new systems have great potential to be superior absorbers for photovolatic applications if their carrrier transport and defect properties are properly optimized.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Pinning of energy transitions of defects, complexes, and surface states in AlGaN alloys

In this work, we determine the dependence of the defect transition energies, electronic bands, and surface charge neutrality levels in AlGaN. With Vacuum level as reference, we show that energy transitions of localized defects and the surface Fermi level are independent of the alloy composition as electronic bands diverge with the increase in the bandgap as a function of alloy composition. The invariance of localized states on the alloy composition creates a convenient internal reference energy with respect to which other energy states may be measured. We demonstrate a higher generality to the universality rule with the independence of deep transition states of otherwise shallow donor type defects [(+1/+3) transition for VN] and defect complexes (C N +Si III ) in addition to the earlier predicted independent nature of mid-gap states when they are either the antibonding state between cationic impurities and host anion or acceptors at anion sites.

36 MATERIALS SCIENCE↗