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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 595 records · Page 33
All sourcesNASA NTRSDOE OSTI
DOE OSTI2012

Ga{sub 1-x}Mn{sub x}N epitaxial films with high magnetization

We report on the fabrication of pseudomorphic wurtzite Ga{sub 1-x}Mn{sub x}N grown on GaN with Mn concentrations up to 10% using molecular beam epitaxy. According to Rutherford backscattering, the Mn ions are mainly at the Ga-substitutional positions, and they are homogeneously distributed according to depth-resolved Auger-electron spectroscopy and secondary-ion mass-spectroscopy measurements. A random Mn distribution is indicated by transmission electron microscopy, and no Mn-rich clusters are present for optimized growth conditions. A linear increase of the c-lattice parameter with increasing Mn concentration is found using x-ray diffraction. The ferromagnetic behavior is confirmed by superconducting quantum-interference measurements showing saturation magnetizations of up to 150 emu/cm{sup 3}.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Towards secondary ion mass spectrometry on the helium ion microscope: An experimental and simulation based feasibility study with He{sup +} and Ne{sup +} bombardment

The combination of the high-brightness He{sup +}/Ne{sup +} atomic level ion source with secondary ion mass spectrometry detection capabilities opens up the prospect of obtaining chemical information with high lateral resolution and high sensitivity on the Zeiss ORION helium ion microscope. The analytical performance in terms of sputtering yield, useful yield, and detection limit is studied and subsequently optimized by oxygen and cesium flooding. Detection limits down to 10{sup -6} and 10{sup -5} can be obtained for silicon using Ne{sup +} and He{sup +}, respectively. A simulation based study reveals furthermore that a lateral resolution <10 nm can be obtained.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2012

The effect of PECVD plasma decomposition on the wettability and dielectric constant changes in silicon modified DLC films for potential MEMS and low stiction applications

We have carried out investigations aimed at understanding the mechanism responsible for a water contact angle increase of up to ten degrees and a decrease in dielectric constant in silicon modified hydrogenated amorphous carbon films compared to unmodified hydrogenated amorphous carbon films. Our investigations based on surface chemical constituent analysis using Raman spectroscopy, x-ray photoelectron spectroscopy (XPS), SIMS, FTIR, contact angle / surface energy measurements and spectroscopic ellipsometry suggests the presence of hydrophobic chemical entities on the surface of the films. This observation is consistent with earlier theoretical plasma chemistry predictions and observed Raman peak shifts in the films. These surface hydrophobic entities also have a lower polarizability than the bonds in the un-modified films thereby reducing the dielectric constant of the silicon modified films measured by spectroscopic ellipsometry. Ellipsometric dielectric constant measurement is directly related to the surface energy through Hamaker's constant. Our current finding is expected to be of benefit to understanding stiction, friction and lubrication in areas that range from nano-tribology to microfluidics.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Precise calibration of Mg concentration in Mg{sub x}Zn{sub 1-x}O thin films grown on ZnO substrates

The growth techniques for Mg{sub x}Zn{sub 1-x}O thin films have advanced at a rapid pace in recent years, enabling the application of this material to a wide range of optical and electrical applications. In designing structures and optimizing device performances, it is crucial that the Mg content of the alloy be controllable and precisely determined. In this study, we have established laboratory-based methods to determine the Mg content of Mg{sub x}Zn{sub 1-x}O thin films grown on ZnO substrates, ranging from the solubility limit of x {approx} 0.4 to the dilute limit of x < 0.01. For the absolute determination of Mg content, Rutherford backscattering spectroscopy is used for the high Mg region above x = 0.14, while secondary ion mass spectroscopy is employed to quantify low Mg content. As a lab-based method to determine the Mg content, c-axis length is measured by x-ray diffraction and is well associated with Mg content. The interpolation enables the determination of Mg content to x = 0.023, where the peak from the ZnO substrate overlaps the Mg{sub x}Zn{sub 1-x}O peak in standard laboratory equipment, and thus limits quantitative determination. At dilute Mg contents below x = 0.023, the localized exciton peak energy of the Mg{sub x}Zn{sub 1-x}O films as measured by photoluminescence is found to show a linear Mg content dependence, which is well resolved from the free exciton peak of ZnO substrate down to x = 0.0043. Our results demonstrate that x-ray diffraction and photoluminescence in combination are appropriate methods to determine Mg content in a wide Mg range from x = 0.004 to 0.40 in a laboratory environment.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Effects of growth temperature on Mg-doped GaN grown by ammonia molecular beam epitaxy

The hole concentration p in Mg-doped GaN films grown by ammonia molecular beam epitaxy depends strongly on the growth temperature T{sub GR}. At T{sub GR}=760 Degree-Sign C, GaN:Mg films showed a hole concentration of p=1.2 Multiplication-Sign 10{sup 18} cm{sup -3} for [Mg]=4.5 Multiplication-Sign 10{sup 19} cm{sup -3}, while at T{sub GR}=840 Degree-Sign C, p=4.4 Multiplication-Sign 10{sup 16} cm{sup -3} for [Mg]=7 Multiplication-Sign 10{sup 19} cm{sup -3}. Post-growth annealing did not increase p. The sample grown at 760 Degree-Sign C exhibited a low resistivity of 0.7 {Omega}cm. The mobility for all the samples was around 3-7 cm{sup 2}/V s. Temperature-dependent Hall measurements and secondary ion mass spectroscopy suggest that the samples grown at T{sub GR}>760 Degree-Sign C are compensated by an intrinsic donor rather than hydrogen.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Structural properties and band offset determination of p-channel mixed As/Sb type-II staggered gap tunnel field-effect transistor structure

The structural properties and band offset determination of p-channel staggered gap In{sub 0.7}Ga{sub 0.3}As/GaAs{sub 0.35}Sb{sub 0.65} heterostructure tunnel field-effect transistor (TFET) grown by molecular beam epitaxy (MBE) were investigated. High resolution x-ray diffraction revealed that the active layers are strained with respect to 'virtual substrate.' Dynamic secondary ion mass spectrometry confirmed an abrupt junction profile at the In{sub 0.7}Ga{sub 0.3}As/GaAs{sub 0.35}Sb{sub 0.65} heterointerface and minimal level of intermixing between As and Sb atoms. The valence band offset of 0.37 {+-} 0.05 eV was extracted from x-ray photoelectron spectroscopy. A staggered band lineup was confirmed at the heterointerface with an effective tunneling barrier height of 0.13 eV. Thus, MBE-grown staggered gap In{sub 0.7}Ga{sub 0.3}As/GaAs{sub 0.35}Sb{sub 0.65} TFET structures are a promising p-channel option to provide critical guidance for the future design of mixed As/Sb type-II based complementary logic and low power devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Modeling boron profiles in silicon after pulsed excimer laser annealing

In this work, we investigated four possible mechanisms which were candidates to explain the shape of boron profiles after ion implantation and melting excimer laser annealing in silicon. A laser with a wavelength of 308 nm and a pulse duration of {approx}180 ns was used. To simulate this process, an existing model for the temperature and phase evolution was complemented with equations for the migration of dopants. Outdiffusion, thermodiffusion, segregation, and adsorption were investigated as possible mechanisms. As a result, we found that outdiffusion and segregation can be excluded as major mechanisms. Thermodiffusion as well as adsorption could both reproduce the build-up at low melt depths, but only adsorption the one at deeper melt depths. In both cases, ion beam mixing during SIMS measurement had to be taken into account to reproduce the measured profiles.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers

The behavior of ultra shallow ion implants of arsenic in Si following solid phase epitaxial re-growth process is reported. A 16 nm amorphous layer was created by ion implantation of Si{sup +} at energy 5 keV and a dose 1 Multiplication-Sign 10{sup 15} at/cm{sup 2}. As ion were implanted at 2 keV using 3 different doses: 1 Multiplication-Sign 10{sup 14}, 5 Multiplication-Sign 10{sup 14} and 1 Multiplication-Sign 10{sup 15} at/cm{sup 2}. The resulting As distributions, confined in the amorphous layer, were thermally treated at 550 Degree-Sign C for 5-300 s in order to electrically activate dopant atoms. Crystal re-growth and As redistribution was investigated by secondary ion mass spectrometry and medium energy ion scattering. A growth rate depending on the As concentration was observed, the rate being slower for higher As content. Arsenic re-distribution to the surface and at the end-of-range defects was observed and a segregation model was developed. Finally, the substitutional fraction of As atoms was related to sheet resistance measurements revealing a higher fraction of electrically active dopant atoms in pre-amorphized samples compared to not pre-amorphized.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Chemical reactions studied at ultra-low temperature in liquid helium clusters

Low-temperature reaction rates are important ingredients for astrophysical reaction networks modeling the formation of interstellar matter in molecular clouds. Unfortunately, such data is difficult to obtain by experimental means. In an attempt to study low-temperature reactions of astrophysical interest, we have investigated relevant reactions at ultralow temperature in liquid helium droplets. Being prepared by supersonic expansion of helium gas at high pressure through a nozzle into a vacuum, large helium clusters in the form of liquid droplets constitute nano-sized reaction vessels for the study of chemical reactions at ultra-low temperature. If the normal isotope {sup 4}He is used, the helium droplets are superfluid and characterized by a constant temperature of 0.37 K. Here we present results obtained for Mg, Al, and Si reacting with O{sub 2}. Mass spectrometry was employed to characterize the reaction products. As it may be difficult to distinguish between reactions occurring in the helium droplets before they are ionized and ion-molecule reactions taking place after the ionization, additional techniques were applied to ensure that the reactions actually occurred in the helium droplets. This information was provided by measuring the chemiluminescence light emitted by the products, the evaporation of helium atoms by the release of the reaction heat, or by laser-spectroscopic identification of the reactants and products.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2013

On the interplay of point defects and Cd in non-polar ZnCdO films

Non-polar ZnCdO films, grown over m- and r-sapphire with a Cd concentration ranging between 0.8% and 5%, have been studied by means of slow positron annihilation spectroscopy (PAS) combined with chemical depth profiling by secondary ion mass spectroscopy and Rutherford back-scattering. Vacancy clusters and Zn vacancies with concentrations up to 10{sup 17} cm{sup -3} and 10{sup 18} cm{sup -3}, respectively, have been measured inside the films. Secondary ion mass spectroscopy results show that most Cd stays inside the ZnCdO film but the diffused atoms can penetrate up to 1.3 {mu}m inside the ZnO buffer. PAS results give an insight to the structure of the meta-stable ZnCdO above the thermodynamical solubility limit of 2%. A correlation between the concentration of vacancy clusters and Cd has been measured. The concentration of Zn vacancies is one order of magnitude larger than in as-grown non-polar ZnO films and the vacancy cluster are, at least partly, created by the aggregation of smaller Zn vacancy related defects. The Zn vacancy related defects and the vacancy clusters accumulate around the Cd atoms as a way to release the strain induced by the substitutional Cd{sub Zn} in the ZnO crystal.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Improving dielectric properties of epitaxial Gd{sub 2}O{sub 3} thin films on silicon by nitrogen doping

We report about the effect of nitrogen doping on the electrical properties of epitaxial Gd{sub 2}O{sub 3} thin films. Epitaxial Gd{sub 2}O{sub 3}:N thin films were grown on Si (111) substrates by solid source molecular beam epitaxy using nitrous oxide as the nitridation agent. Substitutional nitrogen incorporation into the dielectric layer was confirmed by secondary ion mass spectroscopy and X-ray photoelectron spectroscopy analysis. Substantial reduction of the leakage current density and disappearance of hysteresis in capacitance-voltage characteristics observed in the Gd{sub 2}O{sub 3}:N layers indicate that nitrogen incorporation in Gd{sub 2}O{sub 3} effectively eliminates the adverse effects of the oxygen vacancy induced defects in the oxide layer.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Lattice and grain-boundary diffusions of boron atoms in BaSi{sub 2} epitaxial films on Si(111)

A 180-nm-thick boron (B) layer was deposited on a 300-nm-thick a-axis-oriented BaSi{sub 2} epitaxial film grown by molecular beam epitaxy on Si(111) and was annealed at different temperatures in ultrahigh vacuum. The depth profiles of B were investigated using secondary ion mass spectrometry (SIMS) with O{sup 2+}, and the diffusion coefficients of B were evaluated. The B profiles were reproduced well by taking both the lattice and the grain boundary (GB) diffusions into consideration. The cross-sectional transmission electron microscopy (TEM) image revealed that the GBs of the BaSi{sub 2} film were very sharp and normal to the sample surface. The plan-view TEM image exhibited that the grain size of the BaSi{sub 2} film was approximately 0.6 {mu}m. The temperature dependence of lattice and GB diffusion coefficients was derived from the SIMS profiles, and their activation energies were found to be 4.6 eV and 4.4 eV, respectively.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

High resolution TOF - SIMS depth profiling of nano-film multilayers

We present the results of depth profiling studies conducted using an indigenously developed dual-beam high resolution Time-of-Flight Secondary Ion Mass Spectrometer (TOF-SIMS) on thinfilm W-C-W multilayer structure grown on Si substrate. Opto 8 layers could be clearly identified. Mixing of layers is seen which from analysis using roughness model calculations indicate a mixing thickness of about 2nm that correspond to the escape depth of secondary ions from the sample.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Identification of As-vacancy complexes in Zn-diffused GaAs

We have used positron annihilation spectroscopy to study the introduction of point defects in Zn-diffused semi-insulating GaAs. The diffusion was performed by annealing the samples for 2 h at 950 Degree-Sign C. The samples were etched in steps of 7 {mu}m. Both Doppler broadening using slow positron beam and lifetime spectroscopy studies were performed after each etching step. Both techniques showed the existence of vacancy-type defects in a layer of about 45 {mu}m. Secondary ion mass spectroscopy measurements illustrated the presence of Zn at high level in the sample almost up to the same depth. Vacancy-like defects as well as shallow positron traps were observed by lifetime measurements. We distinguish two kinds of defects: As vacancy belongs to defect complex, bound to most likely one Zn atom incorporated on Ga sublattice, and negative-ion-type positron traps. Zn acceptors explained the observation of shallow traps. The effect of Zn was evidenced by probing GaAs samples annealed under similar conditions but without Zn treatment. A defect-free bulk lifetime value is detected in this sample. Moreover, our positron annihilation spectroscopy measurements demonstrate that Zn diffusion in GaAs system is governed by kick-out mechanism.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Observation of two-dimensional p-type dopant diffusion across a p{sup +}-InP/n{sup -}-InGaAs interface using scanning electron microscopy

Scanning electron microscopy (SEM) with potential calculations has been shown to be effective for the detection of p-type dopant diffusion, even across a Zn doped p{sup +}-InP/non-doped n{sup -}-InGaAs/n{sup +}-InP heterojunction. Heterojunction samples were observed using SEM and the electrostatic potential was calculated from Zn concentration profiles obtained by secondary ion mass spectrometry. The sensitivity of SEM for the potential was derived from the SEM observations and potential calculation results. The results were then used to investigate the dependence of the SEM contrast on the Zn diffusion length across the p{sup +}-InP/non-doped n{sup -}-InGaAs interface. Accurate dopant mapping was difficult when the Zn diffusion length was shorter than 30 nm, because the heterojunction affects the potential at the interface. However, accurate dopant mapping was possible when the Zn diffusion length was longer than 30 nm, because the factor dominating the potential variation was not the heterojunction, but rather Zn diffusion 30 nm distant from the interface. Thus, Zn diffusion further than 30 nm from a Zn-doped p{sup +}-InP/non-doped n{sup -}-InGaAs interface can be effectively detected by secondary electron (SE) imaging. SE imaging with potential calculations can be widely used for accurate dopant mapping, even at heterojunctions, and is, therefore, expected to be of significant assistance to the compound semiconductor industry.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Kinetics and thermodynamics associated with Bi adsorption transitions at Cu and Ni grain boundaries

The grain boundary diffusivity of Au in Cu and Cu-Bi, and Cu in Ni and Ni-Bi are characterized by secondary ion mass spectroscopy depth profiling. Samples are equilibrated in a Bi containing atmosphere at temperatures above and below the onset of grain boundary adsorption transitions, sometimes called complexion transitions. A simple thermo-kinetic model is used to estimate the relative entropic contributions to the grain boundary energies. The results indicate that the entropy term plays a major role in promoting thermally and chemically induced grain boundary complexion transition.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Investigation of the release of Si from SiO{sub 2} during the formation of manganese/ruthenium barrier layers

The thermodynamic and structural stability of ruthenium-manganese diffusion barriers on SiO{sub 2} is assessed. A {approx}2 nm film composed of partially oxidized manganese (MnO{sub x} where x < 1) was deposited on a 3 nm thick Ru film and the Mn-MnO{sub x}/Ru/SiO{sub 2} structure was subsequently thermally annealed. X-ray photoelectron spectroscopy and secondary ion mass spectroscopy studies suggest the release and upward diffusion of Si from the dielectric substrate as a result of manganese-silicate formation at the Ru/SiO{sub 2} interface. The migration of Si up through the Ru film results in further manganese-silicate formation upon its interaction with the Mn-MnO{sub x} deposited layer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗