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At least 595 records · Page 33

Dual Phase Change Thermal Diodes with High Rectification for Thermal Management near Room Temperature

Thermal diodes are passive systems that modulate their thermal resistance depending on the direction of temperature gradient, thereby allowing preferential directional heat flow. A dual phase thermal diode consists of a junction between two phase change materials that have opposing temperature-dependent thermal conductivity trends, and whose performance (i.e., rectification ratio) is related to the ratio of the thermal conductivities of the different phases. In this work, a dual phase change diode with a rectification ratio of ~3.5 for an applied temperature bias of ~40 K is presented, which is among the highest-performing junction diodes based on phase change materials at the macroscale for near room temperature applications. The diode is composed of an aqueous solution of poly(N-isopropylacrylamide), a thermo-responsive polymer, and calcium chloride hexahydrate -- a solid-liquid phase change material. Experimental insights are provided into the contributions of different heat transfer mechanisms, conduction, and convection, and the effect of concentration of the thermo-responsive polymer.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Interfacial Momentum Matching for Ohmic Van Der Waals Contact Construction

The difficulty of achieving ohmic contacts is a long-standing challenge for the development and integration of devices based on 2D materials, due to the large mismatch between their electronic properties and those of both traditional metal-based and van der Waals (vdWs) electrodes. Research has focused primarily on the electronic energy band alignment, while the effects of momentum mismatch on carrier transport across the vdWs gaps are largely neglected. Graphene-silicon junctions are utilized to demonstrate that electron momentum distribution can dominate the electronic properties of vdWs contacts. By judiciously introducing scattering centers at the interface that provide additional momentum to compensate the momentum mismatch, the junction conductivity is enhanced by more than three orders of magnitude, enabling the formation of high-quality ohmic contacts. The study establishes the framework for the design of high-performance ohmic vdWs contacts based on both energy and momentum matching, which can facilitate efficient heterogeneous integration of 2D–3D systems and the development of post-CMOS architectures.

2D-3D integration↗

High‐Efficiency Solar Cells Grown on Spalled Germanium for Substrate Reuse without Polishing

Abstract Radical reduction of III–V device costs requires a multifaceted approach attacking both growth and substrate costs. Implementing device removal and substrate reuse provides an opportunity for substrate cost reduction. Controlled spalling allows removal of thin devices from the expensive substrate; however, the fracture‐based process currently generates surfaces with significant morphological changes compared to polished wafers. 49 single junction devices are fabricated across the spalled surface of full 50 mm germanium wafers without chemo‐mechanical polishing before epitaxial growth. Device defects are identified and related to morphological spalling defects—arrest lines, gull wings, and river lines—and their impact on cell performance using physical and functional characterization techniques. River line defects have the most consistent and detrimental effect on cell performance. Devices achieve a single junction efficiency above 23% and open‐circuit voltage of 1.01 V, demonstrating that spalled germanium does not need to be returned to a pristine, polished state to achieve high‐quality device performance.

14 SOLAR ENERGY↗

A neural network‐enhanced reproducing kernel particle method for modeling strain localization

Abstract Modeling the localized intensive deformation in a damaged solid requires highly refined discretization for accurate prediction, which significantly increases the computational cost. Although adaptive model refinement can be employed for enhanced effectiveness, it is cumbersome for the traditional mesh‐based methods to perform while modeling the evolving localizations. In this work, neural network‐enhanced reproducing kernel particle method (NN‐RKPM) is proposed, where the location, orientation, and shape of the solution transition near a localization is automatically captured by the NN approximation via a block‐level neural network (NN) optimization. The weights and biases in the blocked parameterization network control the location and orientation of the localization. The designed basic four‐kernel NN block is capable of capturing a triple junction or a quadruple junction topological pattern, while more complicated localization topological patters are captured by the superposition of multiple four‐kernel NN blocks. The standard RK approximation is then utilized to approximate the smooth part of the solution, which permits a much coarser discretization than the high‐resolution discretization needed to capture sharp solution transitions with the conventional methods. A regularization of the NN approximation is additionally introduced for discretization‐independent material responses. The effectiveness of the proposed NN‐RKPM is verified by a series of numerical verifications.

Baek, Jonghyuk↗

Physical Modeling and Design of a Nonvolatile Optically Gated High‐Power Diamond Transistor

In this work, we present the theory and modeling framework of a diamond optically gated junction field‐effect transistor (DOGFET). The device utilizes nitrogen substitutional centers in type‐1b diamond to optically modulate a p‐ boron doped diamond channel. Using sub‐gap lasers with intensities as low as 100 W/cm 2 , electrons are optically excited from substitutional nitrogen sites to the conduction band of the diamond substrate, thus enabling the optical gate to exercise control on modulating the space‐charge region at the junction and therefore the channel conductivity. We show that the device can deliver a current of 7 μA/μm, or equivalently 1750 A/cm 2 , while switching at a frequency greater than 100 kHz, in a form factor of 5 μm 2 . The breakdown voltage is found to be greater than 1850 V, with a breakdown field strength of ~13 MV/cm. Moreover, the device supports nonvolatile operation with a “memory effect” enabling single transistor state retention. The presented simulation framework provides a physically grounded insight into the limits and opportunities of optoelectronic diamond systems.

Engineering - Electronic and electrical engineerin↗

How Should Researchers Measure Perovskite-Based Monolithic Multijunction Solar Cells’ Performance? A Calibration Lab's Perspective

Perovskite multijunctions (PVSK MJs) have made remarkable progress with monolithic PVSK/PVSK tandems surpassing the efficiency of single-junction (1 J) PVSK cells and PVSK/Si cells reported to exceed the 30% efficiency mark. These efficiencies are reported at standard test conditions (STC), established by the photovoltaic (PV) community to facilitate comparison between devices and technologies. Herein, it is discussed why an accurate STC performance measurement for a MJ is more complicated than for a 1 J cell and the special aspects to be considered when measuring the current-voltage characteristics and the performance of PVSK-containing MJ cells are emphasized. It is discussed why a spectrally adjustable solar simulator is needed and the sequence of accurate performance measurement, namely measurement of the spectral response of each junction, adjustment of the spectrum, and appropriate protocols for measuring the power output of the device at STC, is presented. For all these, common errors and pitfalls that sometime lead to misleading interpretation of the results are presented, and the methods to evaluate the accuracy of the data when a spectrally adjustable solar simulator is not available are recommended. Finally, first step is taken toward recommending performance measurement approaches when high throughput is required as will eventually be in a production line.

14 SOLAR ENERGY↗

Charge Carrier Lifetime Determination in Graded Absorber Solar Cells Using Time‐Resolved Photoluminescence Simulations and Measurements

Thin‐film photovoltaic device efficiencies are limited by carrier recombination, thus understanding recombination mechanisms is critical for performance improvements. Bulk minority carrier lifetime ( τ bulk ) is a critical parameter for solar cells but is difficult to determine in P–N junction devices, especially for high doping. As doping ≥10 16 cm −3 is required for efficient drift‐charge‐carrier‐collection devices, a method for τ bulk determination in doped P–N junction devices is necessary. This work utilizes time‐resolved photoluminescence (TRPL) simulations to quantify bulk and interface recombination properties in highly doped, graded absorber CdSeTe structures. The two methods developed here for τ bulk determination include utilization of an instantaneous lifetime representation to guide TRPL fitting and direct comparison between measured and simulated decays. Simulations verified that both methods are valid for state‐of‐the‐art device architectures which include graded bandgap absorbers, graded doping, and graded lifetimes. Shifts in the dominant recombination mechanism are identified for sufficiently long τ bulk , where front and back interface quality plays a more prominent role. Evaluation of surface recombination velocities and conduction band offset illustrate electro‐optical advantages of a positive conduction band offset and highlight the necessity of improved interfaces as bulk quality in photovoltaic devices improves.

14 SOLAR ENERGY↗

Measurement of Contact Resistivity In Symmetric Polycrystalline Si/SiO x /Monocrystalline Si Test Structures Using Variable Light Illumination

While different methods exist to determine the contact resistivity in semiconductor devices, these methods are limited to measurement of the majority carrier contacts. The measurement of p‐ or n‐type contacts on n‐ or p‐type crystalline silicon, respectively, is challenging due to the blocking diode formed by the p–n junction. In this article, we address this problem for tunneling oxide passivating contacts used in high‐efficiency Si solar cells. We propose a universal method to extract contact resistivity on symmetric test structures with polycrystalline silicon on SiO x (poly‐Si/SiO x ) passivating contacts under illumination, both for p–n and high–low‐junction passivated contacts. In this method, we demonstrate that the total contact resistance of each cell grid finger to the base wafer is governed by its effective contact area, defined by the transfer length extending from both sides of the finger. Therefore, the grid contact resistance of a poly‐Si contact depends on the ratio of the doped poly‐Si sheet resistance to the tunneling contact resistivity.

14 SOLAR ENERGY↗

First-Principles Quantum Transport Modeling of Spin-Transfer and Spin-Orbit Torques in Magnetic Multilayers

A unified approach for computing (i) spin-transfer torque in magnetic trilayers like spin valve and magnetic tunnel junction, where injected charge current flows perpendicularly to interfaces, and (ii) spin-orbit torque in magnetic bilayers of the type ferromagnet/spin-orbit-coupled material, where injected charge current flows parallel to the interface, was reviewed. The experimentally explored and technologically relevant spin-orbit-coupled materials include 5d heavy metals, topological insulators, Weyl semimetals, and transition metal dichalcogenides. This approach requires to construct the torque operator for a given Hamiltonian of the device and the steady-state nonequilibrium density matrix, where the latter is expressed in terms of the nonequilibrium Green’s functions and split into three contributions. Tracing these contributions with the torque operator automatically yields field-like and damping-like components of spin-transfer torque or spin-orbit torque vector, which is particularly advantageous for spin-orbit torque where the direction of these components depends on the unknown-in-advance orientation of the current-driven nonequilibrium spin density in the presence of spin-orbit coupling. Illustrative examples are provided by computing spin-transfer torque in a one-dimensional toy model of a magnetic tunnel junction and realistic Co/Cu/Co spin valve, both of which are described by first-principles Hamiltonians obtained from noncollinear density functional theory calculations, as well as by computing spin-orbit torque in a ferromagnetic layer described by a tight-binding Hamiltonian which includes spin-orbit proximity effect within ferromagnetic monolayers assumed to be generated by the adjacent monolayer transition metal dichalcogenide. In addition, it is shown here how spin-orbit proximity effect, quantified by computing (via first-principles retarded Green’s function) spectral functions and spin textures on monolayers of realistic ferromagnetic material like Co in contact with heavy metal or monolayer transition metal dichalcogenide, can be tailored to enhance the magnitude of spin-orbit torque. Furthermore, errors made in the calculation of spin-transfer torque are quantified when using Hamiltonian from collinear density functional theory, with rigidly rotated magnetic moments to create noncollinear magnetization configurations, instead of proper (but computationally more expensive) self-consistent Hamiltonian obtained from noncollinear density functional theory.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

6D anomaly-free matter spectrum in F-theory on singular spaces

In this paper we study the 6d localized charged matter spectrum of F-theory directly on a singular elliptic Calabi-Yau 3-fold, i.e. without smoothing via resolution or deformation of the entire fibration. Given only the base surface, discriminant locus, and the SL(2, $\mathbb{Z}$) local system, we propose a general prescription for determining the charged matter spectrum localized at intersections of seven-branes, using the technology of string junctions. More precisely, at each codimension-2 collision of seven-branes, we determine the local seven-brane content and compute the number of massless string junctions modulo the action of the SL(2,$\mathbb{Z}$) monodromy. We find agreement with the predicted results from 6d anomaly cancellation in all cases considered. Examples include a generic Weierstrass model with arbitrary Kodaira fiber intersecting an I 1 , as well as cases with jointly charged matter localized at intersections of non-abelian seven-branes.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Image-based modeling of coupled electro-chemo-mechanical behavior of Li-ion battery cathode using an interface-modified reproducing kernel particle method

Abstract An interface-modified reproducing kernel particle method (IM-RKPM) is introduced in this work to allow for a direct model construction from image pixels of heterogeneous polycrystalline Li-ion battery microstructures. The interface-modified reproducing kernel (IM-RK) approximation is constructed through scaling of a kernel function by a regularized distance function in conjunction with strategic placement of interface node locations. This leads to RK shape functions with either weak or strong discontinuities across material interfaces, suitable for modeling various interface mechanics. With the placement of a triple junction node and distance-based scaling of kernel functions, the resulting IM-RK shape function also possesses proper discontinuities at the triple junctions. This IM-RK approximation effectively remedies the well-known Gibb’s oscillation in the smooth approximation of discontinuities. Different from the conventional meshfree approaches for interface discontinuities, this IM-RK approach is done without additional degrees of freedom associated with the enrichment functions, and it is formulated with the standard procedures in the RK shape function construction. This work focuses on identifying the accuracy and convergence properties of IM-RKPM for modeling the coupled electro-chemo-mechanical system. A linear patch test is formulated and numerically tested for the electro-chemo-mechanical coupled problem with a Butler–Volmer boundary condition representing the physical conditions in Li-ion battery microstructures. This is followed by verification of the optimal rates of convergence of IM-RKPM for solving the coupled problem with higher order solutions. The image-based modeling of Li-ion battery microstructures in the numerical examples demonstrates the applicability of the proposed method to realistic Li-ion battery materials modeling.

25 ENERGY STORAGE↗

Investigation of twin growth mechanisms in precipitate hardened AZ91

Here, in this work, an elasto-viscoplastic fast-Fourier-transform (EVP-FFT) model with a dislocation-density (DD) based hardening law is employed to study the growth of a {10$\bar{1}$2} tensile twin that is blocked by basal-precipitates in precipitate-hardened AZ91 magnesium alloy. It is frequently reported that twin growth is hindered in precipitate-hardened Mg alloys; however, thick twin domains are often observed experimentally in these material systems. Detailed numerical investigation of deformation twinning starting from an early propagation stage, before twin growth, reveals that the stress fields that result from two sequentially propagated twins co-impinging on a precipitate relaxes the twin back stress locally and promotes twin growth at the twin-precipitate junction. Based on these findings, a two-step growth mechanism is proposed for twins arrested by precipitates. In the first step, the interaction of a twin tip with a precipitate develops a stress concentration on the other side of the precipitate, prompting the formation of a second twin. Subsequently, the back stresses associated with the first twin are relaxed by the formation of the second twin, allowing the first twin to grow at the twin-precipitate junction and eventually engulf the precipitate. This mechanism suggests that twin growth can be achieved locally with minimal additional external forces, explaining how relatively large twin domains can develop even in the presence of arrays of precipitates.

36 MATERIALS SCIENCE↗

Quantifying and visualizing the microscopic degrees of freedom of grain boundaries in the Wigner–Seitz cell of the displacement-shift-complete lattice

Here we introduce a grain boundary (GB) translation vector, t ws , to describe and quantify the domain of the microscopic degrees of freedom of GBs. It has long been recognized that for fixed macroscopic degrees of freedom of a GB there exists a large multiplicity of states characterized by different relative grain translations. More recently another degree of freedom, [n], the number of GB atoms, has emerged and is now recognized as an equally important component of GB structural multiplicity. In this work, we show that all GB microstates can be uniquely characterized by their value of t ws , which is located within the Wigner–Seitz (WS) cell of the Displacement-Shift-Complete lattice (DSCL) of the GB. The GB translation vector captures information about both the translation state and the number of GB atoms. We show that the density of GB microstates inside the WS cell of the DSCL is not uniform and can form clusters that correspond to different GB phases. Further, the vectors connecting the centers of the clusters correspond to the Burgers vectors of GB phase junctions, which can be predicted without building the junctions. Using t ws , we quantify GB excess shear and argue that it is defined up to a DSCL vector, which has implications for thermodynamic equilibrium conditions. Additionally, this work generalizes the definition of the number of GB atoms [n] to asymmetric boundaries.

36 MATERIALS SCIENCE↗

Analysis of buffer-IPyC separation in TRISO fuel particles

During High Temperature Gas-cooled Reactor (HTGR) operation, and due to the neutron irradiation in the reactor core, damage of the nuclear fuel coating layers occurs. The mechanism of damage formation in the TRISO fuel is explored by the Advanced Gas Reactor (AGR) Fuel Development and Qualification Program, in which the debonding process between coating layers was also investigated. The purpose of this paper is to report simulation results for two models. Firstly, the debonding restricted model, where no gap formation between buffer and IPyC layers is permitted. Secondly, a debonding enabled model, where the gap between those layers is created. The simulations were performed with the Bison code. The inputs of the simulated models are based on data from the AGR-1 experiment. Further, the research included simulations on spherical and aspherical fuel types. The simulations match results obtained by the AGR-1 experiment, which as such shows that the Bison code is a good computational method for simulating the behavior of the gap between buffer and IPyC layers in TRISO fuel. Based on the irradiation experiments, and the Bison simulations, it was concluded that the most common scenario is a gap formation along the buffer-IPyC interface, while the least possible scenario is the situation where there is no gap formation at the buffer-IPyC junction. The computational results confirmed that the sphericity of the fuel influences the thickness of the gap that occurs at the buffer-IPyC junction, in a way that with increasing aspect ratio the gap thickness increases. In addition, the fuel sphericity does not influence the Weibull failure probability. The results obtained for spherical and aspherical fuel are nearly identical.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

A framework for understanding efficient diurnal CO 2 reduction using Si and GaAs photocathodes

Integrated solar fuels and photoelectrochemical (PEC) CO 2 reduction (CO 2 R) are promising pathways toward producing value-added chemicals from CO 2 . However, improvements are needed in activity and selectivity as well as in fundamental understanding of device behavior to engender wide deployment. Here, we report two single-junction, integrated photocathodes for PEC CO 2 R based on TOPCon Si and GaAs substrates, which achieve -10 mA cm -2 at -0.33 V vs. RHE with 41% selectivity to C 2+ products and at -0.03 V vs. RHE with 27% selectivity to C 2+ products, respectively. We investigated the viability of a light-mediated strategy to direct selectivity in buried-junction PEC devices and confirmed that these devices could be optimized independently and described by the physics-based models of the individual components. Finally, we designed a framework to assess operational modes for PEC CO 2 R devices and demonstrated this framework under continuous galvanostatic control and variable illumination conditions.

14 SOLAR ENERGY↗

Anisotropic physics-regularized interpretable machine learning of microstructure evolution

Anisotropic Physics-Regularized Interpretable Machine Learning Microstructure Evolution (APRIMME) is a general-purpose machine learning solution for grain growth simulations. In prior work, PRIMME employed a deep neural network to predict site-specific migration as a function of its neighboring sites to model normal, isotropic, grain growth behavior. This work aims to extend this method by incorporating grain boundary misorientation-based grain growth behavior. APRIMME is trained on anisotropic simulations created using the Monte Carlo-Potts (MCP) model. Furthermore, the results of this work are compared statistically using grain radius, number of sides per grain, mean neighborhood misorientations, and the standard deviation of triple junction dihedral angles, and are found to match in most cases. The exceptions are small and seem to be related to two causes: (1) the deterministic model of APRIMME is learning from the stochastic simulations of MCP, which seems to accentuate triple junction behaviors; and, (2) a bias against very small grains is made evident in a quicker decrease in grains than expected at the beginning of an APRIMME simulation. APRIMME is also evaluated for its general ability to capture anisotropic grain growth behavior by first investigating different test case initial conditions, including a circle grain, three grain, and hexagonal grain microstructures.

36 MATERIALS SCIENCE↗

Transport of coexisting Ni-Cu sulfide liquid and silicate melt in partially molten peridotite

Transport of coexisting sulfide and silicate melts in partially molten peridotite contributes to the redistribution of chalcophile elements within the upper mantle as well as the genesis of magmatic Ni-Cu sulfide deposits, but has not been investigated systematically. Using laboratory experiments, theoretical calculations, and X-ray synchrotron microtomography, this study documents the topology and considers controls on the extraction of two immiscible liquids during partial melting of mantle peridotite. Under hydrostatic conditions, the measured dihedral angle at silicate melt-mineral-mineral junctions is 13.7–21.3°. Silicate melt is distributed along grain edges forming incompletely interconnected melt channels that disconnected by some dead ends at melt fractions ~7–9 vol%. Application of theoretically predicted permeability (k ~10 -14 -10 -16 m 2 ) permits estimation of the extraction velocity of silicate melt of 0.7-11.1 μm/day within a single interconnected melt channel. In the absence of silicate melt, isolated sulfide droplets (3.77 vol%) show a sulfide-olivine-olivine dihedral angle of 91.5–101.3°. However, in the presence of silicate melt, sulfide droplets (average size ~2.53±2.14μm, 1σ) are partially surrounded by silicate melt and stranded in triple junctions or melt pockets due to the limitation of the smallest dimension (0.3μm) of melt channels. Thus, the extraction of sulfide liquid is highly restricted by these dead ends and the smallest dimension of melt channels during porous flow of silicate melt. In contrast, during large-strain shear deformation (strain ~1.6–2.5), initially stranded sulfide droplets were elongated and extracted with silicate melt into liquid-rich sheets with a length of several hundred microns, constantly oriented at 14.3±4.5°to the shear plane and antithetic to the shear direction. The angle is lower than that (18-30°) of those sheets containing sulfide liquid only, indicating that silicate melt dominates liquid-rich sheets. Driven by stress, silicate melt-dominated liquid-rich sheets open the appropriately oriented grain boundaries between silicate minerals, thus providing an efficient pathway for the extraction of sulfide liquid during deformation. When such sheet-like channels remain open, sulfide droplets (> millimeter-scale) can be potentially mobile through high strain domains of the upper mantle, contributing to the addition of chalcophile elements and the fertilization of the lithospheric mantle.

high P-T experiment↗