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At least 595 records · Page 33

Radiation Effects in III-V Solar Cells Grown by Dynamic Hydride Vapor Phase Epitaxy

The recent development of hydride vapor phase epitaxy (HVPE) is potentially promising as a route to lower the cost of high-efficiency III-V solar cells for space applications. HVPE produces the same materials and device structures as the industry-standard organometallic vapor phase epitaxy (OMVPE) process, and although HVPE has shown promising device efficiencies, it lags the OMVPE growth technique in technical maturity. For example, there are no reports of the performance of HVPE-grown devices in radiation environments. There is an expectation that high-quality (that is, single crystal and low-defect) III-V materials will behave similarly regardless of the growth method. However, it is important to verify assumptions as facts. In this project, we produced materials and devices using both HVPE and OMVPE at NREL and irradiated them using 1 MeV electrons to ascertain the effect of radiation on the materials. We also performed initial work on producing more radiation-hard structures, including devices with the pn junction at the front of the device, and devices with a graded doping profile, both of which help with radiation tolerance. Measurements of the devices post radiation exposure showed that the open-circuit voltage (V OC ) of the HVPE-grown solar cells degraded least on a percent basis, although they also started from a lower baseline than the OMVPE-grown devices. All solar cells reached approximately the same V OC after irradiation, indicating that the dose used was sufficient to degrade all device equally. The short-circuit current in the HVPE devices did degrade more than the other solar cells, and this was attributed to a higher-than-expected doping density in the base layer of that cell. The results of these experiments, while by no means comprehensive, do not show any material difference in the radiation effects in OMVPE- and HVPE-grown materials and devices.

14 SOLAR ENERGY↗

Radiation-reduced diffusion of Nd in bcc Fe

Here, this study combines ab initio calculations and kinetic Monte Carlo simulations to investigate the bulk diffusion of Nd, an exemplar lanthanide element, in bcc Fe. Contrary to the conventional belief that irradiation accelerates diffusion processes, our study reveals that irradiation can unexpectedly reduce the diffusion of Nd due to the strong binding between substitutional Nd atoms and vacancies in bcc Fe. Combined with the high concentration of nonequilibrium vacancies, this promotes the abundant formation of Nd+3Va defect complexes containing a single Nd substitutional atom and three vacancies, accompanied by the depletion of Nd-vacancy pairs that mediate the diffusion of Nd.

Density functional theory (DFT)↗

Effect of radiation-induced defects on the superfluid density and optical conductivity of overdoped La 2 - x Sr x CuO 4

Using a combination of time-domain THz spectroscopy (TDTS) and mutual inductance measurements, we have investigated the low-energy electrodynamic response of overdoped La$_{2-x}$Sr$_x$CuO$_4$ films that have been exposed to ion irradiation. Films went through three rounds of irradiation (2, 4, and 6 $\times 10^{13}$ ions/cm$^2$) and mututal inductance and TDTS experiments were performed between each step. Together with the as-grown film, this gives four different levels of disorder. The transport scattering rate that is measured directly in the THz experiments is an approximately linear function of the radiation dose at all temperatures. This is consistent with a proportionate increase in elastic scattering from point-like 2D disorder. Here, in the superconducting state we find that the relation between T$_c$, the superfluid density, and the scattering rates are quantitatively at odds with the predictions based on the extant theory of Abrikosov-Gorkov-like pair breaking in a dirty d-wave superconductor. Increasing disorder causes only a small change in T$_c$ for the overdoped films, but the changes to the $\omega \sim 0$ superfluid density are much larger.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Mitigating Heavy Ion Irradiation‐Induced Degradation in p‐type SnO Thin‐Film Transistors at Room Temperature

The study investigates the mitigation of radiation damage on p‐type SnO thin‐film transistors (TFTs) with a fast, room‐temperature annealing process. Atomic layer deposition is utilized to fabricate bottom‐gate TFTs of high‐quality p‐type SnO layers. After 2.8 MeV Au 4+ irradiation at a fluence level of 5.2 × 10 12 ions cm −2 , the output drain current and on/off current ratio ( I on / I off ) decrease by more than one order of magnitude, field‐effect mobility ( μ FE ) reduces more than four times, and subthreshold swing (SS) increases more than four times along with a negative shift in threshold voltage. The observed degradation is attributed to increased surface roughness and defect density, as confirmed by scanning electron microscopy (SEM), high‐resolution micro‐Raman, and transmission electron microscopy (TEM) with geometric phase analysis (GPA). A technique is demonstrated to recover the device performance at room temperature and in less than a minute, using the electron wind force (EWF) obtained from low‐duty‐cycle high‐density pulsed current. At a pulsed current density of 4.0 × 10 5 A cm −2 , approximately four times increase in I on / I off is observed, 41% increase in μ FE , and 20% decrease in the SS of the irradiated TFTs, suggesting effectiveness of the new annealing technique.

Al-Mamun, Nahid Sultan↗

The role of stacking fault tetrahedra on void swelling in irradiated copper

Abstract A long-standing and critical issue in the field of irradiated structural materials is that void swelling is significantly higher in face-centered cubic-structured (fcc) materials (1% dpa −1 ) as compared to that of body-centered cubic-structured (bcc) materials (0.2% dpa −1 ). Despite extensive research in this area, the underlying mechanism of the difference in swelling resistance between these two types of materials is not yet fully understood. Here, by combining atomistic simulations and STEM imaging, we find stacking fault tetrahedra (SFTs) are the primary cause of the high swelling rate in pure fcc copper. We reveal that SFTs in fcc copper are not neutral sinks, different from the conventional knowledge. On the contrary, they are highly biased compared to other types of sinks because of the SFT-point defect interaction mechanism. SFTs show strong absorption of mobile self-interstitial atoms (SIAs) from the faces and vertices, and weak absorption of mobile vacancies from the edges. We compare the predicted swelling rates with experimental findings under varying conditions, demonstrating the distinct contributions of each type of sink. These findings will contribute to understanding the swelling of irradiated structural materials, which may facilitate the design of materials with high swelling resistance.

36 MATERIALS SCIENCE↗

Microstructural and phase changes in alpha uranium investigated via in-situ studies and molecular dynamics

A deeper knowledge of thermally induced microstructural and phase evolution in nuclear metallic fuel can be obtained using novel in-situ microscopic analyses. Such studies can provide information on the dynamics of phase transitions which is not possible with conventional postmortem characterization (post-irradiation examination). In this work, the behavior of alpha uranium (α-U) was investigated via in-situ heating tests in a transmission electron microscope. Here, the main objective is to understand the microstructural and phase changes, such as defect annihilation and ß phase formation and retention, observed in reactor in-pile transient studies at the Transient Reactor Test facility. Indeed, defect migration and rearrangement were observed within the α phase starting at 673 K; α→ß phase transition was observed between 773 K and 1,073 K during the heating ramp (which is in the temperature window reported for α→ß transition temperatures). Recrystallization and formation of nano grains was observed at high temperatures (over 1,073 K). Such recrystallization was possibly related to the formation of the γ phase. Finally, it was indeed observed that the ß phase (but not γ phase) was retained at room temperature upon rapid cooling. Molecular dynamics studies support these experimental results and shows that the γ phase of pure uranium cannot be retained at room temperature if not stabilized with the addition of an alloying element.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Thermal transport across nanoscale damage profile in sapphire irradiated by swift heavy ions

In this work, we studied the degradation of thermal conductivity in single crystal sapphire (α-Al 2 O 3 ) irradiated by 167 MeV Xe swift heavy ions (SHIs) over the multiple fluences in the range of 10 12 –10 14 ions/cm 2 . Thermal conductivity was measured primarily in the cross-plane direction using a noncontact ultrafast optical pump-probe technique called picosecond time domain thermoreflectance (TDTR). Multiple samples with variable ion fluences allowed us to probe distinct regions resulting from different regimes of microstructure evolution caused by electronic energy loss. By tuning the penetration depth of the thermal waves using different modulation frequencies, two regions with distinct conductivities were identified and the values of which were found to be consistent with phonon-mediated thermal transport models while the microstructure was confirmed by electron microscopy characterization. These damaged regions were determined to be a several micrometer thick ion track region and several tens of nanometer-thick amorphous layer present only above 5.0 × 10 13 ions/cm 2 . These results demonstrate the applicability of TDTR to resolve thermal transport behavior in SHI irradiated oxides having nonhomogeneous damage profile on a nanometer scale. The presented approach facilitates future studies aiming at resolving the impact of distinct damage resulting from electronic and nuclear stopping regimes under irradiation.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Novel Source Development for Focused Ion Beam Implantation and Irradiation [Slides]

We have demonstrated focused ion implantation for fabrication of single atom devices and nanofabrication. This is a viable solution for prototyping - fast and easy! There is on-going work in diamond, SiN, SiC, hBN, GaN, AlGan, etc. A new liquid metal alloy ion source development is on-going. There is a pathway towards deterministic defect centers in wide bandgap materials using FIB implantation.

43 PARTICLE ACCELERATORS↗

Transition-metal doped titanate nanowire photocatalysts boosted by selective ion-exchange induced defect engineering

Defect engineering through elemental doping is an efficient way to boost the performance of semiconductor photocatalysts. For this work, transition-metal (TM) doped titanate nanowires (TNWs) were prepared via ion-exchange over the titanate precursors and demonstrated for the Rhodamine B (RhB) degradation under ultraviolet (UV) light irradiation. The ion-exchange of selective ions (V 5+ , Cr 3+ , Ni 2+ , and Zn 2+ ) with protons from pristine TNWs resulted in the hierarchical meso-porosity of nanowires with large pores of ~5–20 nm by TM doping and small pores of ~3.6–4.5 nm inherited from pristine TNWs, which facilitates the mass transfer while maintaining high surface area and active sites. Meanwhile, the TM intercalation partially reduces the Ti 4+ to Ti 3+ and narrows the optical bandgap, which, together with oxygen vacancies and superoxide radicals from pristine TNWs, enhance the adsorption and photocatalytic degradation performance of RhB. This work helps to elucidate the effects of transition-metal doping and provides a rational strategy towards high performance titanate-based photocatalysts for efficient and sustainable wastewater treatment.

36 MATERIALS SCIENCE↗

Impact of proton irradiation on 4H-SiC Low Gain Avalanche Detectors (LGADs)

Silicon carbide (SiC) particle detectors have the potential to provide time resolutions and robust performance in extreme environments which exceed that of silicon detectors. In this work 4H-SiC low gain avalanche detectors (LGADs) and complementary PiN diodes were irradiated with 2.5 GeV protons at fluences up to 3.33 × 10 14 p/cm 2 . The electrostatic performance of both irradiated and non-irradiated devices was evaluated using I-V and C-V measurements. Moreover, charge collection measurements using α particles were also conducted. SiC LGADs displayed a loss in rectification, high ON-state resistances >10 10 Ω-cm 2 , and the complete removal of gain when exposed to the highest proton fluence. Additionally, the reductions in capacitance and OFF-state current pointed to compensation of the gain layer as a gain reducing mechanism. The introduction of radiation-induced defects also hinders carrier acceleration, which reduces impact ionization and further gain reduction. LGADs exposed to a fluence of 1 × 10 14 p/cm 2 experienced a partial recovery in gain (originally having a value of ∼ 2) with a value of ∼ 1.65 when applying a bias of 500 V. Charge trapping was also seen in the reduction of charge collection efficiency (CCE) to ∼ 65% for the PiN diode. However, despite the reduction in device performance, the demonstration of a measurable signal after irradiation points to the potential of SiC LGAD detectors for future high energy physics applications.

43 PARTICLE ACCELERATORS↗

The effects of radiation-induced grain subdivision and dislocations on the fracture properties of uranium dioxide

Microcantilever bending tests were applied on uranium dioxide samples irradiated by 84 MeV Xe ions. Depending on the initial grain sizes, different levels of grain subdivision and dislocation development were observed near the irradiated surface. These radiation damage features were shown to degrade the fracture properties of both samples. The fundamental aspects of the radiation-microstructure-property relationships were discussed in this paper, taking a holistic consideration of the microcantilever bending data, fractography and microstructures. The separate effects of the irradiation-induced grain subdivision and dislocations on the fracture initiation and propagation of uranium dioxide were discussed. In conclusion, it was observed that radiation-induced dislocations and grain subdivision, without the presence of Xe bubbles co-located with the defects, cause reductions in the Young's modulus, fracture strain, and fracture stress, and a transition to intergranular fracture.

36 MATERIALS SCIENCE↗

Managing photoinduced electron transfer in AgInS2–CdS heterostructures

Ternary semiconductors such as AgInS2, with their interesting photocatalytic properties, can serve as building blocks to design light harvesting assemblies. The intraband transitions created by the metal ions extend the absorption well beyond the bandgap transition. The interfacial electron transfer of AgInS2 with surface bound ethyl viologen under bandgap and sub-bandgap irradiation as probed by steady state photolysis and transient absorption spectroscopy offers new insights into the participation of conduction band and trapped electrons. Capping AgInS2 with CdS shifts emission maximum to the blue and increases the emission yield as the surface defects are remediated. CdS capping also promotes charge separation as evident from the efficiency of electron transfer to ethyl viologen, which increased from 14% to 29%. The transient absorption measurements that elucidate the kinetic aspects of electron transfer processes in AgInS2 and CdS capped AgInS2 are presented. The improved performance of CdS capped AgInS2 offers new opportunities to employ them as photocatalysts.

Kipkorir, Anthony↗

Structural properties and recrystallization effects in ion beam modified B20-type FeGe films

Disordered iron germanium (FeGe) has recently garnered interest as a testbed for a variety of magnetic phenomena as well as for use in magnetic memory and logic applications. This is partially owing to its ability to host skyrmions and antiskyrmions—nanoscale whirlpools of magnetic moments that could serve as information carriers in spintronic devices. In particular, a tunable skyrmion–antiskyrmion system may be created through precise control of the defect landscape in B20-phase FeGe, motivating the development of methods to systematically tune disorder in this material and understand the ensuing structural properties. To this end, we investigate a route for modifying magnetic properties in FeGe. In particular, we irradiate epitaxial B20-phase FeGe films with 2.8 MeV Au 4+ ions, which creates a dispersion of amorphized regions that may preferentially host antiskyrmions at densities controlled by the irradiation fluence. To further tune the disorder landscape, we conduct a systematic electron diffraction study with in situ annealing, demonstrating the ability to recrystallize controllable fractions of the material at temperatures ranging from ~150 to 250°C. Finally, we describe the crystallization kinetics using the Johnson–Mehl–Avrami–Kolmogorov model, finding that the growth of crystalline grains is consistent with diffusion-controlled one-to-two dimensional growth with a decreasing nucleation rate.

36 MATERIALS SCIENCE↗

Lower length scale informed improvements to Bison U-Pu-Zr fuel swelling model

Due to renewed interest in metallic fuels from the U-(Pu)-Zr material system, significant improvements have recently been made to BISON's capability to simulate metallic fuel, particularly in the area of swelling. In this report, lower length scale simulations that have been conducted to inform the engineering-scale models in BISON during FY20 are described. For the high-temperature regions of the fuel that are dominated by the $\gamma$ phase of U-(Pu)-Zr, two new models for swelling have implemented in BISON. Phase-field simulations were conducted to calculate parameters for these and other BISON models that control when gaseous swelling ceases and fission gas release begins. For the low-temperature regions of the fuel dominated by the phase of uranium, microstructurally resolved simulations of pore growth and crystal deformation were performed to understand the effect of irradiation-generated crystal shape changes. Conformally meshed microstructures with pores were simulated with a crystal plasticity model and with a burnup eigenstrain model. Plastic deformation will not cause pore size to increase; burnup eigenstrain (irradiation-induced crystal shape changes) will increase the volume of existing porosity and cause it to become anisotropic in shape. Additional model development work for early-stage fission gas cluster/bubble formation in the $\gamma$ phase were performed, by coupling with defect clustering within cluster dynamics framework. Sensitivity analysis were conducted to identify the critical thermo-kinetic parameters needed for rigorous assessment.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Formation of uranium nitride nanoparticles via mechanical alloying of uranium-molybdenum alloy fuels in gaseous nitrogen

Uranium-molybdenum (U-Mo) alloys show promise as a nuclear fuel system due to their high thermal conductivity and fuel loading capability. However, U-Mo systems are susceptible to irradiation induced swelling ultimately affecting the cladding via mechanical and chemical interactions. To address these shortcomings, this research investigated the formation of uranium mononitride (UN) nanoparticles within a 90 wt% U/10 wt% Mo (U-10Mo) matrix to act as a prospective defect sink for fission products at nanometric hetero-interfaces. To promote the formation of UN, U-10Mo powders were mechanically alloyed under a high purity nitrogen atmosphere. Variations of the milling process investigated included media size, duration of milling, and number of times the milling jar was re-aerated with nitrogen gas. Characterization of the fuel microstructure was completed using light element analysis, X-ray diffraction, scanning and transmission-electron microscopy, electron energy loss spectroscopy, and atom probe tomography. UN nanoparticles measuring 1–5 nm in radius were observed in the U-Mo matrix as early as 1 h into the mechanical alloying process. Milling time in excess of 10 h was found to lead to deleterious effects induced by the stainless-steel milling media.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Hole Trapping in Halide Perovskites Induces Phase Segregation

Metal halide perovskites have garnered a great deal of attention for their applications in photovoltaics, LEDs, and radiation detection. The ease of solution processing high-quality perovskite semiconductors with large absorption coefficients and tolerance to native defects is decidedly attractive. Additionally, the ability to precisely tune the band gap of halide perovskites through compositional alloying of the halide ion is of particular interest for a range of applications, especially for tandem solar cells. However, under steady state light irradiation, an initially homogeneous mixed halide perovskite (MHP) will form local domains that are rich in one halide ion (e.g., Br or I). This light-induced phase segregation in MHPs forms iodide-rich domains that act as charge carrier traps and lowers the efficiency of perovskite-based devices. Thus, phase segregation poses a serious challenge to the implementation of MHPs in real-world device settings. Interestingly, when a phase segregated MHP film is placed in the dark, entropic driving forces become dominant and the segregated perovskite remixes and returns to its initially homogeneous state. Several key mechanistic details of phase segregation have been elucidated over the years. However, there are still aspects of halide segregation that are not clear, and there is ongoing debate in the literature as to what are the key factors that contribute to the mechanism. This Account discusses recent results that point to the specific role of hole trapping in phase segregation. Interestingly, generation of holes through above-band-gap excitation or through electrochemical injection increases ion migration and leads to phase segregation. The thermodynamic and redox properties of halide perovskites provide a strong driving force for hole trapping and oxidation of iodide species in MHPs. However, mobile halide species within the perovskite lattice take time to migrate and generate halide-rich domains. When in contact with a nonpolar solvent, the migration of iodine species is further extended to expulsion of iodine from the perovskite film. Thus, the mobility of halides and their susceptibility to hole-induced oxidation play a crucial role in determining the long-term stability of metal halide perovskites. Strategies to gain kinetic control over ion migration to slow phase segregation are needed to overcome these hurdles and achieve stable mixed halide perovskites. Modification of the perovskite composition through introduction of different cations or halide ions, or introduction of low-dimensional perovskite phases may suppress phase segregation. Furthermore, in achieving stability and improving the efficiency of perovskite solar cells and light emitting devices with minimal impacts, suppression of segregation remains the key factor.

36 MATERIALS SCIENCE↗

Understanding radiation effects in friction stir welded MA956 using ion irradiation and a rate theory model

We report an outstanding challenge in the manufacturing and joining of oxide dispersion strengthened steels is retaining the nanofeatures in the alloy throughout the fabrication and welding process. MA956 was friction stir welded with two different sets of welding parameters, resulting in a medium and high heat input. After welding, 5 MeV Fe ++ ion irradiations were performed at doses ranging from 50 to 200 dpa in the temperature range of 400 to 500°C. Post-irradiation characterization was performed with scanning transmission electron microscopy and energy-dispersive x-ray spectroscopy to investigate the Y-Al-O dispersoids, voids, and dislocations. After welding, the dispersoid microstructure coarsened, resulting in fewer and larger dispersoids regardless of heat input. After irradiation, the dispersoid behavior in the welded material was sensitive to temperature, exhibiting growth behavior attributed to Ostwald coarsening at 500 °C but a mixture of nucleation and more muted growth at 400 and 450 °C, attributed to competing mechanisms of radiation-enhanced diffusion and Ostwald coarsening. Void swelling correlated to heat input; being more prevalent in the welded conditions occurring at lower doses and in higher values relative to the base material. The low values of swelling despite microstructure coarsening caused by welding demonstrate the excellent swelling resistance of MA956, even after welding with the highest swelling values of 0.5% noted in the stir zone high heat input condition at 450 °C, 200 dpa. The dislocation behavior was inconsistent: the strongest trend was that network density was higher for welded versus base material, and an increase in loop diameter with temperature was observed. A rate theory model based on the observed microstructure suggests at high temperature interstitial loss to sinks was more likely to be dominant compared to mutual annihilation via point defect recombination, because of an increase of the radiation diffusion coefficient with temperature regardless of initial welded microstructure.

36 MATERIALS SCIENCE↗

A fusion relevant data-driven engineering void swelling model for 9Cr tempered martensitic steels

The UCSB database on cavity evolution in 9-12Cr tempered martensitic steels (TMS), includes the results for both dual heavy and helium ion (DII), and High Flux Isotope Reactor (HFIR) in situ helium injection (ISHI) neutron irradiations at 500°C. These results were combined with literature single ion and fission neutron irradiation data to derive a model for the void volume fraction, f v , as a function of displacements per atom (dpa) and transmutant helium concentrations in atomic parts per million (appm). The scientific foundation for the paper is described in a companion paper entitled “Cavity Evolution and Void Swelling in Dual Ion Irradiated Tempered Martensitic Steels”. Here, in this study, we show that f v (dpa, He/dpa) is described by the incubation dose, dpa i , for the onset of void growth, and the post-incubation growth rate, f v ’(%/dpa). Both dpa i and f v ’ decrease with increasing He/dpa at > ~ 5. The dpa i is also lower for the ISHI neutron irradiations at the same He/dpa. Single heavy ion and fission reactor neutron irradiations, with low He/dpa ratios, have a much larger dpa i . Based on a combined analysis of DII, single ion, ISHI and fission neutron data, we further show that the post-incubation f v data analyzed here have a common empirical curve shape, with f v ’ reaching up to ~ 0.2%/dpa at very high dpa. We also show that f v ’ can be predicted based on a physical model of defect partitioning between evolving sinks. At 500°C and fusion relevant He/dpa ≈ 10, the best-fit model predicts nominal swelling, S = f v /(1-f v ), of ~ 1.1, 4.9 and 16% at 50, 100 and 200 dpa, respectively. The physically motivated, data-driven model includes estimated uncertainties for both dpa i and f v ’.

36 MATERIALS SCIENCE↗