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Results for “Gallium arsenide”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 595 records · Page 33
All sourcesNASA NTRSDOE OSTI
NASA NTRS1966

Semiconductor laser amplifier.

IR GaAs laser amplifier with gains as high as 2000, output powers of 150 mw and saturation occurring with current increase at low light levels

POWER GAIN↗
NASA NTRS1979

Satellite power system: Concept development and evaluation program, reference system report

The Satellite Power System (SPS) Reference System is discussed and the technical and operational information required in support of environmental, socioeconomic, and comparative assessment studies are emphasized. The reference System concept features a gallium-aluminum-arsenide, and silicon solar cell options. Other aspects of an SPS are the construction of bases in space, launch and mission control bases on earth, and fleets of various transportation vehicles to support the construction and maintenance operations of the satellites.

Source record↗
NASA NTRS1979

An interim report on the NTS-2 solar cell experiment

Data obtained from the fourteen solar cell modules on the NTS-2 satellite are presented together with a record of panel temperature and sun inclination. The following flight data are discussed: (1) state of the art solar cell configurations which embody improvements in solar cell efficiency through new silicon surface and bulk technology, (2) improved coverslip materials and coverslip bonding techniques, (3) short and long term effects of ultraviolet rejection filters vs. no filters on the cells, (4) degradation on a developmental type of liquid epitaxy gallium-aluminum-arsenide solar cell, and (5) space radiation effects.

Statler, R. L.↗
NASA NTRS1980

The 3-5 semiconductor solid solution single crystal growth

Techniques used for liquid and vapor phase epitaxy of gallium indium arsenide are described and the difficulties encountered are examined. Results show that the growth of bulk III-V solid solution single crystals in a low gravity environment will not have a major technological impact. The float zone technique in a low gravity environment is demonstrated using cadmium telluride. It is shown that this approach can result in the synthesis of a class of semiconductors that can not be grown in normal gravity because of growth problems rooted in the nature of their phase diagrams.

Gertner, E. R.↗
NASA NTRS1992

Evaluation of light emitting diode characteristics for a space-based plant irradiation source

Light emitting diodes (LEDs) are a promising irradiation source for plant growth in space. Improved semiconductor technology has yielded LED devices fabricated with gallium aluminum arsenide (GaAlAs) chips which have a high efficiency for converting electrical energy to photosynthetically active radiation. Specific GaAlAs LEDs are available that emit radiation with a peak wavelength near the spectral peak of maximum quantum action for photosynthesis. The electrical conversion efficiency of installed systems (μmol s -1 of photosynthetic photons per watt) of high output LEDs can be within 10% of that for high pressure sodium lamps. Output of individual LEDs were found to vary by as much as 55 % from the average of the lot. LED ratings, in mcd (luminous intensity per solid angle), were found to be proportional to total photon output only for devices with the same dispersion angle and spectral peak. Increasing current through the LED increased output but also increased temperature with a consequent decrease in electrical conversion efficiency. A photosynthetic photon flux as high as 900 μmol m -2 s -1 has been produced on surfaces using arrays with LEDs mounted 7.6 mm apart, operating at a current of 50 mA device -1 and at an installed density of approximately 17,200 lamps m -2 of irradiated area. Advantages of LEDs over other electric light sources for use in space systems include long life, minimal mass and volume and being a solid state device.

D J Barta↗
NASA NTRS1995

Developing Low-Noise GaAs JFETs For Cryogenic Operation

Report discusses aspects of effort to develop low-noise, low-gate-leakage gallium arsenide-based junction field-effect transistors (JFETs) for operation at temperature of about 4 K as readout amplifiers and multiplexing devices for infrared-imaging devices. Transistors needed to replace silicon transistors, relatively noisy at 4 K. Report briefly discusses basic physical principles of JFETs and describes continuing process of optimization of designs of GaAs JFETs for cryogenic operation.

Cunningham, Thomas J.↗
NASA NTRS1995

Nanosatellite Power System Considerations

The capability to build complex electronic functions into compact packages is opening the path to miniature satellites on the order of 1 kg mass, 10 cm across, packed with the computing processors, motion controllers, measurement sensors, and communications hardware necessary for operation. Power generation will be from short strings of silicon or gallium arsenide-based solar photovoltaic cells with the array power maximized by a peak power tracker (PPT). Energy storage will utilize a low voltage battery with nickel cadmium or lithium ion cells as the most likely selections for rechargeables and lithium (MnO2-Li) primary batteries for one shot short missions.

Robyn, M.↗
NASA NTRS1997

Photomorphogenesis, photosynthesis, and seed yield of wheat plants grown under red light-emitting diodes (LEDs) with and without supplemental blue lighting

Red light-emitting diodes (LEDs) are a potential light source for growing plants in spaceflight systems because of their safety, small mass and volume, wavelength specificity, and longevity. Despite these attractive features, red LEDs must satisfy requirements for plant photosynthesis and photomorphogenesis for successful growth and seed yield. To determine the influence of gallium aluminium arsenide (GaAlAs) red LEDs on wheat photomorphogenesis, photosynthesis, and seed yield, wheat (Triticum aestivum L., cv. 'USU-Super Dwarf') plants were grown under red LEDs and compared to plants grown under daylight fluorescent (white) lamps and red LEDs supplemented with either 1% or 10% blue light from blue fluorescent (BF) lamps. Compared to white light-grown plants, wheat grown under red LEDs alone demonstrated less main culm development during vegetative growth through preanthesis, while showing a longer flag leaf at 40 DAP and greater main culm length at final harvest (70 DAP). As supplemental BF light was increased with red LEDs, shoot dry matter and net leaf photosynthesis rate increased. At final harvest, wheat grown under red LEDs alone displayed fewer subtillers and a lower seed yield compared to plants grown under white light. Wheat grown under red LEDs+10% BF light had comparable shoot dry matter accumulation and seed yield relative to wheat grown under white light. These results indicate that wheat can complete its life cycle under red LEDs alone, but larger plants and greater amounts of seed are produced in the presence of red LEDs supplemented with a quantity of blue light.

NASA Discipline Life Support Systems↗
NASA NTRS1996

Hydrogen Effects on GaAs Device Reliability

GaAs and InP devices in hermetically sealed packages have been observed to exhibit unacceptable degradation in both RF and DC characteristics. This degradation has been observed to occur at temperatures as low as 125oC. The source of the degradation has been linked to hydrogen gas that has been absorbed in the package's metals (Kovar, plating, etc.) and converted into atomic hydrogen within the Pt or Pd metallization of the gate structure. Subsequently, atomic hydrogen diffuses into the channel region of the FET structure and neutralizes the Si donors, resulting in a degradation of the device characteristics.

Gallium Arsenide↗