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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Providing information that will make possible a favorable compromise between landing impact and planing resistance is the immediate problem in experimental float development. A description of equipment to perform dropping tests are included as well as how to determine the landing impact.
This paper presents the characteristics of floats submitted to the test committee and the tests performed on them.
For the purpose of solving all the problems involved, an investigation was made with flat, rectangular planing surfaces. The investigation of a flat, rectangular planing surface, which can be considered as the portion of a flat float bottom lying in front of the step, has the advantage that the frictional resistance can be determined directly from the test results. Normal and tangential forces act on the lower side of the planing surface towed through still water, while the upper side and the lateral edges are under constant atmospheric pressure.
Floating zone methods have potential applications in growing single high-quality semi-conductor crystals. In this method, melts can be sustained without containers and, therefore, are free from contamination from the containers. The main objective of this project is to use the Image Furnace to study a large diameter, (20 mm) single crystal of InSb under microgravity conditions. The behavior of the liquid column is recorded on the VTR tapes and is compared with what is expected theoretically. The single crystal grown in space is characterized by comparing it with single crystals grown on the ground with respect to crystallographic and electronic properties. The goal of this project is to confirm the effects of the microgravity on the single crystals.
An architecture to evaluate a 24-bit floating-point sum or difference of products using modified sequential carry-save multipliers with extensive pipelining is described. The basic building block of the architecture is a carry-save multiplier with built-in mantissa alignment for the summation during the multiplication cycles. A carry-save adder, capable of mantissa alignment, correctly positions products with the current carry-save sum. Carry propagation in individual multipliers is avoided and is only required once to produce the final result.
The ANSI/IEEE Standard 854-1987 for floating-point arithmetic is interpreted by converting the lexical descriptions in the standard into mathematical conditional descriptions organized in tables. The standard is represented in higher-order logic within the framework of the HOL (Higher Order Logic) system. The paper is divided in two parts with the first part the interpretation and the second part the description in HOL.
This report describes how a laser-heated floating zone apparatus can be used to investigate single-crystal fibers of various compositions. A feedrod with a stoichiometric composition of high-purity powders was connected to a pedestal and fed into a laser scan where it combined with a single-crystal fiber seed. A molten zone was formed at this junction. As the feedrod was continuously fed into the laser scan, a single-crystal fiber of a prescribed orientation was withdrawn from the melt. The resultant fibers, whose diameters ranged from 100 to 250 gm, could then be evaluated on the basis of their growth behavior, physical properties, mechanical properties, and fiber perfection.
Experimental complementary metal-oxide/semiconductor (CMOS) active-pixel image sensor integrated circuit features simple floating-gate structure, with metal-oxide/semiconductor field-effect transistor (MOSFET) as active circuit element in each pixel. Provides flexibility of readout modes, no kTC noise, and relatively simple structure suitable for high-density arrays. Features desirable for "smart sensor" applications.
The use of lithium-ion (Li(+)) drifting to study the properties of point defects in p-type Floating-Zone (FZ) silicon crystals is reported. The Li(+) drift technique is used to detect the presence of vacancy-related defects (D defects) in certain p-type FZ silicon crystals. SUPREM-IV modeling suggests that the silicon point defect diffusivities are considerably higher than those commonly accepted, but are in reasonable agreement with values recently proposed. These results demonstrate the utility of Li(+) drifting in the study of silicon point defect properties in p-type FZ crystals. Finally, a straightforward measurement of the Li(+) compensation depth is shown to yield estimates of the vacancy-related defect concentration in p-type FZ crystals.
It has been demonstrated in floating-zone configurations utilizing silicone oil and nitrate salts that mechanically induced vibration effectively minimizes detrimental, gravity independent, thermocapillary flow. The processing parameters leading to crystal improvement and aspects of the on-going modeling effort are discussed. Plans for applying the crystal growth technique to commercially relevant materials, e.g., silicon, as well as the value of processing in a microgravity environment are presented.
A silicon crystal growth experiment has been accomplished using the floating-zone technique under microgravity on a sounding rocket (TEXUS 36). Measurements of temperature fluctuations in the silicon melt zone due to time dependent thermocapillary convection (Marangoni convection) and an observation of the microscopic growth rate were simultaneously performed during the experiment. Temperature fluctuations of about 0.5 - 0.7 C with a frequency range < 0.5Hz were detectable. The microscopic growth rate fluctuates considerably around the average growth rate of 1 mm/min: Growth rates up to 3 to 4mm/min, close to zero mm/min, as well as negative values (backmelting) were observed. Dopant striations are clearly visible in the Sb-doped crystal. They were characterized by Spreading Resistance measurements and Differential Interference Contrast microscopy. The frequencies of temperature fluctuations, microscopic growth rates, and the dopant inhomogeneities correspond quite well, with main frequencies between 0.1 and 0.3 Hz. 3D numerical simulations were performed to predict the optimum position of the temperature sensor, and the characteristic temperature amplitudes and frequencies. At a position 3.4mm above the interface and 1.4mm inside the melt, equivalent to the sensor tip position in the experiment, temperature fluctuations up to 1.8 C and frequencies ? 0.25Hz were found in the simulations.
Heat and mass transfer in semiconductor float-zone processing are strongly influenced by convective flows in the zone, originating from sources such as buoyancy convection, thermocapillary (Marangoni) convection, differential rotation, or radio frequency heating. Because semiconductor melts are conducting, flows can be damped by the use of static magnetic fields to influence the interface shape and the segregation of dopants and impurities. An important objective is often the suppression of time-dependent flows and the ensuing dopant striations. In RF-heated Si-FZ - crystals, fields up to O.STesla show some flattening of the interface curvature and a reduction of striation amplitudes. In radiation-heated (small-scale) SI-FZ crystals, fields of 0.2 - 0.5 Tesla already suppress the majority of the dopant striations. The uniformity of the radial segregation is often compromised by using a magnetic field, due to the directional nature of the damping. Transverse fields lead to an asymmetric interface shape and thus require crystal rotation (resulting in rotational dopant striations) to achieve a radially symmetric interface, whereas axial fields introduce a coring effect. A complete suppression of dopant striations and a reduction of the coring to insignificant values, combined with a shift of the axial segregation profile towards a more diffusion-limited case, are possible with axial static fields in excess of 1 Tesla. Strong static magnetic fields, however, can also lead to the appearance of thermoelectromagnetic convection, caused by the interaction of thermoelectric currents with the magnetic field.
Gel-xSix (x ? 10 at.%) single crystals have been grown with the float-zone technique applied within a monoellipsoid mirror furnace. The feed crystal consisted of synthesized GeO.95siO.05 polycrystalline material. Two Boron-doped (much much more than 1-2 (raised dot) 1017 at/cm3) crystals were grown under identical conditions using <100> Ge seeds. One Ge:Ga-doped (much much more than 1018 at/cm3) reference crystal was also grown in the same furnace. Compositional profiles were measured with an energy dispersive analysis by X-ray (EDAX). The maximum silicon concentration attained was 10 at.%. Micrographs of the etched crystals show sharp changes in interface curvature at the crystal edges. These are considered to be caused by solutal Marangoni convection, whose strength is assumed to be a direct function of silicon concentration, Theoretical considerations show that the flow direction, velocity, and strength varies significantly from a solutal Marangoni convection regime directly in front of the solid-liquid interface to a thermal Marangoni convection regime within the bulk melt.
Our previous experiments with NaNO3 float-zones revealed that steady thermocapillary flow can be balanced/offset by the controlled surface streaming flow induced by end-wall vibration. In the current experiments we are examining the effects of streaming flow on steadying/stabilizing nonsteady thermocapillary flow in such zones. To this effect we have set up a controlled NaNO3 half-zone experiment, where the processing parameters, like zone dimensions and temperature gradients, can be easily varied to generate nonsteady thermocapillary flows. In the present paper we present preliminary results of our investigations into stabilizing such flows by employing end-wall vibration.
Our previous experiments with NaNO3 float-zones revealed that steady thermocapillary flow can be balanced/offset by the controlled surface streaming flow induced by end-wall vibration. In the current experiments we are examining the effects of streaming flow on steadying/stabilizing nonsteady thermocapillary flow in such zones. To this effect we have set up a controlled NaNO3 half-zone experiment, where the processing parameters, like zone dimensions and temperature gradients, can be easily varied to generate nonsteady thermocapillary flows. In the present paper we present preliminary results of our investigations into stabilizing such flows by employing endwall vibration.
Reconfigurable Computing (RC) has emerged as a viable computing solution for computationally intensive applications. Several applications have been mapped to RC system and in most cases, they provided the smallest published execution time. Although RC systems offer significant performance advantages over general-purpose processors, they require more application development time than general-purpose processors. This increased development time of RC systems provides the motivation to develop an optimized module library with an assembly language instruction format interface for use with future RC system that will reduce development time significantly. In this paper, we present area/performance metrics for several different types of floating point (FP) modules that can be utilized to develop complex FP applications. These modules are highly pipelined and optimized for both speed and area. Using these modules, and example application, FP matrix multiplication, is also presented. Our results and experiences show, that with these modules, 8-10X speedup over general-purpose processors can be achieved.
This viewgraph presentation provides information on the Floating Potential Probe (FPP) on the International Space Station (ISS). The FPP measures the body voltage (electric potential) of the, and the measurements are then transmitted to Earth.
In this paper we report early results from the Floating Potential Probe (FPP) recently installed on the International Space Station (ISS). The data show that FPP properly measures the electrical potential of ISS structure with respect to the plasma it is flying through. FPP Langmuir probe data seem to give accurate measurements of the ambient plasma density, and are generally consistent with the IRI-90 model. FPP data are used to judge the performance of the ISS Plasma Contacting Units (PCUs), and to evaluate the extent of ISS charging in the absence of the PCUs.