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At least 595 records · Page 33
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DOE OSTI2019

Theory of a Planckian Metal

We present a lattice model of fermions with N flavors and random interactions that describes a Planckian metal at low temperatures T → 0 in the solvable limit of large N. We begin with quasiparticles around a Fermi surface with effective mass m* and then include random interactions that lead to fermion spectral functions with frequency scaling with k B T/ℏ. Here, the resistivity ρ obeys the Drude formula ρ = m*/(ne 2 τ tr ), where n is the density of fermions, and the transport scattering rate is 1/τ tr = fk B T/ℏ; we find f of order unity and essentially independent of the strength and form of the interactions. The random interactions are a generalization of the Sachdev-Ye-Kitaev models; it is assumed that processes nonresonant in the bare quasiparticle energies only renormalize m*, while resonant processes are shown to produce the Planckian behavior.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2015

Magnetism and electronic structures of novel layered CaFeAs{sub 2} and Ca{sub 0.75}(Pr/La){sub 0.25}FeAs{sub 2}

The magnetic and electronic properties of the parent material CaFeAs{sub 2} of new superconductors are investigated using first-principles calculations. We predict that the ground state of CaFeAs{sub 2} is a spin-density-wave (SDW)-type striped antiferromagnet driven by Fermi surface nesting. The magnetic moment around each Fe atom is about 2.1 μ{sub B}. We also present electronic and magnetic structures of electron-doped phase Ca{sub 0.75}(Pr/La){sub 0.25}FeAs{sub 2}, the SDW order was suppressed by La/Pr substitution. The As in arsenic layers is negative monovalent and acts as blocking layers enhancing two-dimensional character by increasing the spacing distance between the FeAs layers. This favors strong antiferromagnetic fluctuations mediated pairing, implying higher T{sub c} in Ca{sub 0.75}(Pr/La){sub 0.25}FeAs{sub 2} than Ca{sub 0.75}(Pr/La){sub 0.25}Fe{sub 2}As{sub 2}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Critical temperature of metallic hydrogen sulfide at 225-GPa pressure

The Eliashberg theory generalized for electron—phonon systems with a nonconstant density of electron states and with allowance made for the frequency behavior of the electron mass and chemical potential renormalizations is used to study T{sub c} in the SH{sub 3} phase of hydrogen sulfide under pressure. The phonon contribution to the anomalous electron Green’s function is considered. The pairing within the total width of the electron band and not only in a narrow layer near the Fermi surface is taken into account. The frequency and temperature dependences of the complex mass renormalization ReZ(ω), the density of states N(ε) renormalized by the electron—phonon interactions, and the electron—phonon spectral function obtained computationally are used to calculate the anomalous electron Green’s function. A generalized Eliashberg equation with a variable density of electron states has been solved. The frequency dependence of the real and imaginary parts of the order parameter in the SH{sub 3} phase has been obtained. The value of T{sub c} ≈ 177 K in the SH{sub 3} phase of hydrogen sulfide at pressure P = 225 GPa has been determined by solving the system of Eliashberg equations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Electronic and optical properties of NbO{sub 2}

In the present study, we combine theoretical and experimental approaches in order to gain insight into the electronic properties of both the high-temperature, rutile (metallic) and low-temperature, body-centered tetragonal (insulating) phase of niobium dioxide (NbO{sub 2}) as well as the optical properties of the low-temperature phase. Theoretical calculations performed at the level of the local density approximation, Hubbard U correction, and hybrid functional are complemented with the spectroscopic ellipsometry (SE) of epitaxial films grown by molecular beam epitaxy. For the rutile phase, the local density approximation (LDA) gives the best description and predicts Fermi surface nesting consistent with wave vectors that lead to niobium-niobium dimerization during the phase transition. For the insulating phase, LDA provides a good quantitative description of the lattice, but only a qualitative description for the band gap. Including a Hubbard U correction opens the band gap at the expense of correctly describing the valence band and lattice of both phases. The hybrid functional slightly overestimates the band gap. Ellipsometric measurement is consistent with insulating behavior with a 1.0 eV band gap. Comparison with the theoretical dielectric functions, obtained utilizing a scissors operator to adjust the LDA band gap to reproduce the ellipsometry data, allows for identification of the SE peak features.

36 MATERIALS SCIENCE↗
DOE OSTI2016

The intercalation chemistry of layered iron chalcogenide superconductors

The iron chalcogenides FeSe and FeS are superconductors composed of two-dimensional sheets held together by van der Waals interactions, which makes them prime candidates for the intercalation of various guest species. We review the intercalation chemistry of FeSe and FeS superconductors and discuss their synthesis, structure, and physical properties. Before we review the latest work in this area, we provide a brief background on the intercalation chemistry of other inorganic materials that exhibit enhanced superconducting properties upon intercalation, which include the transition metal dichalcogenides, fullerenes, and layered cobalt oxides. From past studies of these intercalated superconductors, we discuss the role of the intercalates in terms of charge doping, structural distortions, and Fermi surface reconstruction. We also briefly review the physical and chemical properties of the host materials—mackinawite-type FeS and β-FeSe. The three types of intercalates for the iron chalcogenides can be placed in three categories: 1.) alkali and alkaline earth cations intercalated through the liquid ammonia technique; 2.) cations intercalated with organic amines such as ethylenediamine; and 3.) layered hydroxides intercalated during hydrothermal conditions. A recurring theme in these studies is the role of the intercalated guest in electron doping the chalcogenide host and in enhancing the two-dimensionality of the electronic structure by spacing the FeSe layers apart. We end this review discussing possible new avenues in the intercalation chemistry of transition metal monochalcogenides, and the promise of these materials as a unique set of new inorganic two-dimensional systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Magnetic-breakdown oscillations of the thermoelectric field in layered conductors

The response of an electron system to nonuniform heating of layered conductors with an arbitrary quasi-two-dimensional electron energy spectrum in a strong magnetic field B is investigated theoretically in the case when cyclotron frequency ω{sub c} is much higher than the frequency 1/τ of collisions between charge carriers. In the case of a multisheet Fermi surface (FS), we calculate the dependence of the thermoelectric coefficients on the magnitude and orientation of the magnetic field in the vicinity of the Lifshitz topological transition when the FS connectivity changes under the action of an external force (e.g., pressure) on the conductor. Upon a decrease in the spacing between individual pockets (sheets) of the FS, conduction electrons can tunnel as a result of the magnetic breakdown from one FS sheet to another; their motion over magneticbreakdown trajectories becomes complicated and entangled. The thermoelectric field exhibits a peculiar dependence on the magnetic field: for a noticeable deviation of vector B from the normal through angle ϑ to the layers, the thermoelectric field oscillates as a function of tanϑ. The period of these oscillations contains important information on the distance between individual FS sheets and their corrugation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

The Shubnikov-de Haas effect and thermoelectric properties of Tl-doped Sb{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3}

The influence of doping with Tl on the Shubnikov-de Haas effect at T = 4.2 K in magnetic fields up to 38 T in p-Sb{sub 2−x}Tl{sub x}Te{sub 3} (x = 0, 0.005, 0.015, and 0.05) and n-Bi{sub 2−x}Tl{sub x}Se{sub 3} (x = 0, 0.01, 0.02, 0.04, and 0.06) single crystals is investigated. Extreme cross-sections of the Fermi surface in both materials decrease upon doping with Tl: the hole concentration decreases in Sb{sub 2−x}Tl{sub x}Te{sub 3} due to the donor effect of Tl and the electron concentration in n-Bi{sub 2−x}Tl{sub x}Se{sub 3} decreases due to the acceptor effect of Tl. The temperature dependences of the Seebeck coefficient, electrical conductivity, thermal conductivity, and dimensionless thermoelectric figure of merit in a temperature range of 77–300 K are measured. The thermal conductivity and electrical conductivity decrease upon doping with Tl both in p-Sb{sub 2−x}Tl{sub x}Te{sub 3} and in n-Bi{sub 2−x}Tl{sub x}Se{sub 3}. The Seebeck coefficient increases in all compositions upon an increase in doping over the entire measured temperature range. The thermoelectric figure of merit increases upon doping with Tl.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Electronic structure of ruthenium-doped iron chalcogenides

The structural and electronic properties of hypothetical Ru{sub x}Fe{sub 1−x}Se and Ru{sub x}Fe{sub 1−x}Te systems have been investigated from first principles within the density functional theory (DFT). Reasonable values of lattice parameters and chalcogen atomic positions in the tetragonal unit cell of iron chalcogenides have been obtained with the use of norm-conserving pseudopotentials. The well known discrepancies between experimental data and DFT-calculated results for structural parameters of iron chalcogenides are related to the semicore atomic states which were frozen in the used here approach. Such an approach yields valid results of the electronic structures of the investigated compounds. The Ru-based chalcogenides exhibit the same topology of the Fermi surface (FS) as that of FeSe, differing only in subtle FS nesting features. Our calculations predict that the ground states of RuSe and RuTe are nonmagnetic, whereas those of the solid solutions Ru{sub x}Fe{sub 1−x}Se and Ru{sub x}Fe{sub 1−x}Te become the single- and double-stripe antiferromagnetic, respectively. However, the calculated stabilization energy values are comparable for each system. The phase transitions between these magnetic arrangements may be induced by slight changes of the chalcogen atom positions and the lattice parameters a in the unit cell of iron selenides and tellurides. Since the superconductivity in iron chalcogenides is believed to be mediated by the spin fluctuations in single-stripe magnetic phase, the Ru{sub x}Fe{sub 1−x}Se and Ru{sub x}Fe{sub 1−x}Te systems are good candidates for new superconducting iron-based materials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

High T{sub c} in cuprates as a universal property of the electron–phonon system

The Eliashberg theory, which is generalized due to peculiar properties of the finite-width electron band for electron–phonon (EP) systems with a variable electron density of states (DOS), as well as with allowance for the electron–hole nonequivalence of the frequency behavior of the chemical potential renormalization depending on the doping level and electron correlations in the vertex function, is used to study T{sub c} in cuprates. The phonon contribution to the nodal anomalous electron Green’s function (GF) is considered. Pairing within the total width of the electron band, and not only in a narrow layer at the Fermi surface, is taken into account. The calculated frequency and temperature dependences, as well as the dependence on the doping level of the complex renormalization ReZ, ImZ of the mass, complex renormalization Reχ(ω), Imχ(ω) of the chemical potential, and DOS N(ε) renormalized due to the EP interaction are used to calculate the electron nodal anomalous GF. It is found that the effect of suppressing the high-frequency contribution to the Eliashberg equations derived anew for the EP system with a finite width of the electron band is a decisive factor for the manifestation of the effect of high-temperature superconductivity (HTSC). It is shown that in the vicinity of the optimal hole-type doping level in cuprates, the high value of T{sub c} is reproduced by the spectral function of the electron–phonon interaction, which is obtained from tunneling experiments. Upon an increase in the doping level, leading to an increase in the degree of electron–hole nonequivalence, the new logarithmic term appearing in the equations for T{sub c} has a tendency to increase T{sub c}, while intensification of damping of charge carriers (especially suppression of the cutoff factor) leads to a decrease in T{sub c}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Shubnikov–de Haas Thermoelectric Field Oscillations in Layered Conductors in the Vicinity of a Topological Lifshits Transition

We have studied the response of a layered conductor with a quasi-two-dimensional electron spectrum and a multisheet Fermi surface (FS) formed by two weakly corrugated cylinders and two planar sheets adjoining these cylinders to nonuniform heating. As a result of action of pressure on the conductor or its doping with impurity atoms, distance Δ{sub p} between the FS cylinder and planar sheets can be reduced to such an extent that conduction electrons begin roaming over these sheets, tunneling from one FS sheet (cavity) to the other. If a conduction electron can visit several times all FS sheets during its mean free time, its motion in the plane orthogonal to the magnetic field becomes finite. In this case, Shubnikov–de Haas oscillations are excited with a period determined by the closed area circumscribed by the electron during its motion in the magnetic-breakdown trajectory in the momentum space. We have calculated the dependence of the thermoelectric field on the magnitude and orientation of a quite strong quantizing magnetic field. In a magnetic field normal to the layers, the cross sections of the cylindrical part of the FS are equidistant from both FS planar sheets. However, this equidistance is violated even for a small deviation of the field from the normal to the layers by angle ϑ, and, at a certain value ϑ{sub k} of this angle, the probability of magnetic breakdown to one of the FS planar sheets can be so low that the electron cannot close the magnetic-breakdown trajectory, and its motion over the other planar sheet with a visit to the FS cylindrical part becomes infinite. In this case, the magnetic-breakdown quantum oscillations of magnetization and all kinetic characteristics of the conductor disappear, and their disappearance is repeated periodically with a change in the slope of the magnetic field to the layers as a function of tanϑ.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Evolution from topological Dirac metal to flat-band-induced antiferromagnet in layered K x Ni 4 S 2 (0 ≤ x ≤ 1)

Condensed matter systems with coexisting Dirac cones and flat bands and a switchable control between them within a single system are desirable but remarkably uncommon. Here, we report a layered quantum material system, K x Ni 4 S 2 (0 <= x <= 1), that simultaneously hosts both characteristics without involving typical Kagome/honeycomb lattices. Enabled by a topochemical K-deintercalation process, the Fermi surface can be fine-tuned continuously over a wide range of energies. Consequently, a non-magnetic Dirac-metal state with a topological nontrivial Z 2 index of 1;(000), supported by first-principles calculations and high mobility up to 1,471 cm 2 V -1 s -1 , is observed on the K-rich x = 1 side, whereas a flat-band-induced antiferromagnetic state with T N up to 10.1 K emerges as the K-content approaches 0. The K x Ni 4 S 2 system offers a versatile platform for exploring emerging phenomena and underscores aviable pathway for in situ control of quantum materials dominated by Dirac cones, flat bands, and their interplay.

dirac metal↗
DOE OSTI2023

Monolayer Superconductivity and Tunable Topological Electronic Structure at the Fe(Te,Se)/Bi 2 Te 3 Interface

The interface between 2D topological Dirac states and an s-wave superconductor is expected to support Majorana-bound states (MBS) that can be used for quantum computing applications. Realizing these novel states of matter and their applications requires control over superconductivity and spin-orbit coupling to achieve spin-momentum-locked topological interface states (TIS) which are simultaneously superconducting. While signatures of MBS have been observed in the magnetic vortex cores of bulk FeTe 0.55 Se 0.45 , inhomogeneity and disorder from doping make these signatures unclear and inconsistent between vortices. In this work, superconductivity is reported in monolayer (ML) FeTe 1–y Se y (Fe(Te,Se)) grown on Bi 2 Te 3 by molecular beam epitaxy (MBE). Spin and angle-resolved photoemission spectroscopy (SARPES) directly resolve the interfacial spin and electronic structure of Fe(Te,Se)/Bi 2 Te 3 heterostructures. For y = 0.25, the Fe(Te,Se) electronic structure is found to overlap with the Bi 2 Te 3 TIS and the desired spin-momentum locking is not observed. In contrast, for y = 0.1, reduced inhomogeneity measured by scanning tunneling microscopy (STM) and a smaller Fe(Te,Se) Fermi surface with clear spin-momentum locking in the topological states are found. Hence, it is demonstrated that the Fe(Te,Se)/Bi 2 Te 3 system is a highly tunable platform for realizing MBS where reduced doping can improve characteristics important for Majorana interrogation and potential applications.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Charge Density Wave Order and Electronic Phase Transitions in a Dilute d ‐Band Semiconductor

Abstract As one of the most fundamental physical phenomena, charge density wave (CDW) order predominantly occurs in metallic systems such as quasi‐1D metals, doped cuprates, and transition metal dichalcogenides, where it is well understood in terms of Fermi surface nesting and electron–phonon coupling mechanisms. On the other hand, CDW phenomena in semiconducting systems, particularly at the low carrier concentration limit, are less common and feature intricate characteristics, which often necessitate the exploration of novel mechanisms, such as electron–hole coupling or Mott physics, to explain. In this study, an approach combining electrical transport, synchrotron X‐ray diffraction, and density‐functional theory calculations is used to investigate CDW order and a series of hysteretic phase transitions in a dilute d ‐band semiconductor, BaTiS 3 . These experimental and theoretical findings suggest that the observed CDW order and phase transitions in BaTiS 3 may be attributed to both electron–phonon coupling and non‐negligible electron–electron interactions in the system. This work highlights BaTiS 3 as a unique platform to explore CDW physics and novel electronic phases in the dilute filling limit and opens new opportunities for developing novel electronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Engineering Anomalously Large Electron Transport in Topological Semimetals

Abstract Anomalous transport of topological semimetals has generated significant interest for applications in optoelectronics, nanoscale devices, and interconnects. Understanding the origin of novel transport is crucial to engineering the desired material properties, yet their orders of magnitude higher transport than single‐particle mobilities remain unexplained. This work demonstrates the dramatic mobility enhancements result from phonons primarily returning momentum to electrons due to phonon‐electron dominating over phonon–phonon scattering. Proving this idea, proposed by Peierls in 1932, requires tuning electron and phonon dispersions without changing symmetry, topology, or disorder. This is achieved by combining de Haas ‐ van Alphen (dHvA), electron transport, Raman scattering, and first‐principles calculations in the topological semimetals MX 2 (M = Nb, Ta and X = Ge, Si). Replacing Ge with Si brings the transport mobilities from an order magnitude larger than single particle ones to nearly balanced. This occurs without changing the crystal structure or topology and with small differences in disorder or Fermi surface. Simultaneously, Raman scattering and first‐principles calculations establish phonon–electron dominated scattering only in the MGe 2 compounds. Thus, this study proves that phonon‐drag is crucial to the transport properties of topological semimetals and provides insight to engineer these materials further.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Anomalously Suppressed Thermal Conduction by Electron-Phonon Coupling in Charge-Density-Wave Tantalum Disulfide

Charge and thermal transport in a crystal is carried by free electrons and phonons (quantized lattice vibration), the two most fundamental quasiparticles. Above the Debye temperature of the crystal, phonon-mediated thermal conductivity ( κ L ) is typically limited by mutual scattering of phonons, which results in κ L decreasing with inverse temperature, whereas free electrons play a negligible role in κ L . Here, an unusual case in charge-density-wave tantalum disulfide (1T-TaS 2 ) is reported, in which κ L is limited instead by phonon scattering with free electrons, resulting in a temperature-independent κ L . In this system, the conventional phonon–phonon scattering is alleviated by its uniquely structured phonon dispersions, while unusually strong electron-phonon (e-ph) coupling arises from its Fermi surface strongly nested at wavevectors in which phonons exhibit Kohn anomalies. The unusual temperature dependence of thermal conduction is found as a consequence of these effects. The finding reveals new physics of thermal conduction, offers a unique platform to probe e-ph interactions, and provides potential ways to control heat flow in materials with free charge carriers. The temperature-independent thermal conductivity may also find thermal management application as a special thermal interface material between two systems when the heat conduction between them needs to be maintained at a constant level.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Advances in Rare-Earth Tritelluride Quantum Materials: Structure, Properties, and Synthesis

A distinct class of 2D layered quantum materials with the chemical formula of RTe 3 (R = lanthanide) has gained significant attention owing to the occurrence of collective quantum states, superconductivity, charge density waves (CDW), spin density waves, and other advanced quantum properties. To study the Fermi surface nesting driven CDW formation, the layered RTe 3 family stages an excellent low dimensional genre system. In addition to the primary energy gap feature observed at higher energy, optical spectroscopy study on some RTe 3 evidence a second CDW energy gap structure indicating the occurrence of multiple CDW ordering even with light and intermediate RTe 3 compounds. Here, a comprehensive review of the fundamentals of RTe 3 layered tritelluride materials is presented with a special focus on the recent advances made in electronic structure, CDW transition, superconductivity, magnetic properties of these unique quantum materials. A detailed description of successful synthesis routes including the flux method, self-flux method, and CVT along with potential applications is summarized.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Electronic Topological Transition as a Route to Improve Thermoelectric Performance in Bi 0.5 Sb 1.5 Te 3

The electronic structure near the Fermi surface determines the electrical properties of the materials, which can be effectively tuned by external pressure. Bi0.5Sb1.5Te3 is a p-type thermoelectric material which holds the record high figure of merit at room temperature. Here it is examined whether the figure of merit of this model system can be further enhanced through some external parameter. With the application of pressure, it is surprisingly found that the power factor of this material exhibits λ behavior with a high value of 4.8 mW m –1 K –2 at pressure of 1.8 GPa. Such an enhancement is found to be driven by pressure-induced electronic topological transition, which is revealed by multiple techniques. Together with a low thermal conductivity of about 0.89 W m –1 K –1 at the same pressure, a figure of merit of 1.6 is achieved at room temperature. The results and findings highlight the electronic topological transition as a new route for improving the thermoelectric properties.

36 MATERIALS SCIENCE↗