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At least 595 records · Page 33

Native point defects in HgCdTe infrared detector material: Identifying deep centers from first principles

We investigate the native point defects in the long-wavelength infrared (LWIR) detector material Hg0.75Cd0.25Te using a dielectric-dependent hybrid density functional combined with spin–orbit coupling. Characterizing these point defects is essential as they are responsible for intrinsic doping and nonradiative recombination centers in the detector material. The dielectric-dependent hybrid functional allows for an accurate description of the bandgap (Eg) for Hg1−xCdxTe (MCT) over the entire compositional range, a level of accuracy challenging with standard hybrid functionals. Our comprehensive examination of the native point defects confirms that cation vacancies VHg(Cd) are the primary sources of p-type conductivity in the LWIR material given their low defect formation energies and the presence of a shallow acceptor level (−/0) near the valence-band maximum. In addition to the shallow acceptor level, the cation vacancies exhibit a deep charge transition level (2−/−) situated near the midgap, characteristic of nonradiative recombination centers. Our results indicate that Hg interstitial could also be a deep center in the LWIR MCT through a metastable configuration under the Hg-rich growth conditions. While an isolated Te antisite does not show deep levels, the formation of VHg–TeHg defect complex introduces a deep acceptor level within the bandgap.

Physics↗

Halide-free synthesis of metastable graphitic BC 3

A halide-free route to the synthesis of graphitic BC 3 was discovered via decomposition temperature matching: benzene (C 6 H 6 ) as the carbon precursor and the borohydride anion (BH 4 − ) as the boron precursor.

08 HYDROGEN↗

N-Doping improves charge transport and morphology in the organic non-fullerene acceptor O-IDTBR

Molecular doping has been shown to improve the performance of various organic (opto)electronic devices. When compared to p-doped systems, research into n-doped organic small-molecules is relatively limited, primarily due to the lack of suitable dopants and the often encountered unfavourable microstructural effects. These factors have prevented the use of n-doping in a wider range of existing materials, such as non-fullerene acceptors (NFAs), that have already shown great promise for a range of (opto)electronic applications. Here, we show that several different molecular n-dopants, namely [1,2-b:2',1'-d]benzo[i][2.5]benzodiazocine potassium triflate adduct (DMBI-BDZC), tetra-n-butylammonium fluoride (TBAF) and 4-(2,3-dihydro-1,3-dimethyl-1H-benzimidazol-2-yl)-N,N-dimethylbenzenamine (N-DMBI), can be used to n-dope the molecular semiconductor O-IDTBR, a promising NFA, and increase the electron field-effect mobility to >1 cm 2 V -1 s -1 . By combining complementary experimental techniques with computer simulations of doping and charge carrier dynamics, we show that improved charge transport arises from synergistic effects of n-type doping and morphological changes. Specifically, a new, previously unreported dopant-induced packing orientation results in one of the highest electron mobility values reported to-date for an NFA molecule. Overall, this work highlights the importance of dopant–semiconductor interactions and their impact on morphology, showing that dopant-induced molecular packing motifs may be generic and a key element of the charge transport enhancement observed in doped organics.

36 MATERIALS SCIENCE↗

Doped Chiral Polymer Metamaterials

Some implementations provide a composite material that includes a first material and a second material. In some implementations, the composite material is a metamaterial. The first material includes a chiral polymer (e.g., crystalline chiral helical polymer, poly-.gamma.-benzyl-L-glutamate (PBLG), poly-L-lactic acid (PLA), polypeptide, and/or polyacetylene). The second material is within the chiral polymer. The first material and the second material are configured to provide an effective index of refraction value for the composite material of 1 or less. In some implementations, the effective index of refraction value for the composite material is negative. In some implementations, the effective index of refraction value for the composite material of 1 or less is at least in a wavelength of one of at least a visible spectrum, an infrared spectrum, a microwave spectrum, and/or an ultraviolet spectrum.

Park, Cheol↗

Energy Frontier Research Centers: Center for the Computational Design of Functional Layered Materials (CCDM) August 1, 2014 - July 31, 2018; Center for Complex Materials from First Principles (CCM) August 1, 2018 - July 31, 2021 (Final Report)

The mission of the DOE Energy Frontier Research Centers CCDM (2014-2018) and CCM (2018-2021) was to theoretically develop, computationally apply, and experimentally validate electronic structure methods for all materials, with a focus on the complex materials, especially layered and two-dimensional materials, strongly-correlated materials, and liquid water. This was achieved by over 200 published journal articles authored by about 17 senior investigators from physics and chemistry and from theory, computation, and experiment, plus their collaborators. In particular, the Centers confirmed the predictive power of the SCAN (strongly constrained and appropriately normed) density functional, which was constructed to satisfy 17 known exact constraints and several appropriate norms. Without being fitted to real bonded systems, and at a modest computational cost, SCAN correctly predicted covalent, ionic, metallic, hydrogen, and van der Waals bonds in many challenging materials. SCAN gave an improved description of defects in semiconductors, surface properties of metals, seven phases of ice, liquid water, liquid and supercooled silicon, subtle structural distortions in ferroelectrics, formation energies and structural predictions for solids, and critical pressures for structural phase transitions. Perhaps most remarkably, SCAN correctly described some strongly-correlated materials that were previously believed to be beyond the reach of density-functional approximations. SCAN is the only density functional that correctly predicts the band gap closing under chemical doping of the cuprate high-temperature superconducting materials. SCAN also predicts a landscape of competing stripe and magnetic phases in the cuprates. For some materials with some codes, SCAN has convergence problems that are greatly reduced by the CCM-developed r 2 SCAN, without loss of accuracy or rigor. SCAN and r 2 SCAN still make some self-interaction error, which is greatly reduced by the CCDM/ CCM-developed local orbital scaling correction (LOSC). These Centers further proved that the fundamental energy gaps of a solid from an orbital energy difference and from total energy differences are the same for a large class of generalized Kohn-Sham (GKS) functionals, including SCAN and standard hybrid functionals, and that symmetry breaking arises when a dynamic density fluctuation drops to zero frequency. The Centers identified new mechanisms for catalysis in layered materials with ions intercalated between the layers, investigated charge density waves both in model systems and in real layered materials, studied changes of band gap with the number of layers, and explored topological ultrathin films, bent nanoribbons, and defects.

08 HYDROGEN↗

Exploring the impact of multivalent substitution on high-temperature electrical conductivity in doped lanthanum chromite perovskites: An experimental and ab-initio study

Doped LaCrO 3 perovskites hold promise as robust materials for electrical interconnects and sensor applications in harsh environments. In this work, we investigated the high-temperature behavior of La 1–x Sr x CrO 3 , La 1–x Ca x CrO 3 and La 0.8 Sr 0.2 Cr 1-x Mn x O3 (0.1 ≤ x ≤ 0.4) through a combination of computational modeling and physical characterization up to 1500 °C. Crystalline structural properties were determined and compared with ab-initio calculations, which demonstrated excellent agreement with experimental findings. High-temperature electrical conductivity measurements were performed under different atmospheres. Calcium and strontium/manganese co-doped lanthanum chromites exhibited typical semiconductor exponential trends and conductivity showed proportional correlation with substitutions levels up to 30 %. The DFT modelling was completed up to 1500 °C, including low and high temperature chromite phases and oxygen vacancies insertion. Calculations were correlated with experimental electrical properties. This work expands the understanding of doped lanthanum chromites and paves the way for the development of materials suitable for demanding high-temperature applications.

20 FOSSIL-FUELED POWER PLANTS↗

Dopant segregation in YAG single crystal fibers grown by the laser heated pedestal growth technique

In this work, we report self-segregation of dopants in a crystal matrix within a single crystal (SC) fiber. Neodymium and holmium-doped yttrium aluminum garnet (YAG) fibers were grown using the Laser Heated Pedestal Growth (LHPG) technique and cross-sectional dopant concentration was measured using electron-probe micro-analysis. It was observed that the degree of auto-segregation of the rare-earth dopant depended on the difference in ionic size of the dopant ion and the Y 3+ ion in the YAG matrix. While holmium showed little tendency to self-segregate, the concentration of neodymium ions varied as much as 25% across the cross-section of the fiber. Strong correlation between the dopant concentration profile and fiber draw speed was also demonstrated. Since the local refractive index depends on the concentration of dopants, a refractive index profile can be achieved by a dopant profile across the fiber cross-section. Engineered index profiles can be realized by varying growth conditions, dopants, crystal matrix, etc. Such an approach is promising in applications such as the development of monolithic SC fibers with graded-index profiles.

36 MATERIALS SCIENCE↗

Colloquium : Quantum anomalous Hall effect

The quantum Hall (QH) effect, quantized Hall resistance combined with zero longitudinal resistance, is the characteristic experimental fingerprint of Chern insulators—topologically nontrivial states of two-dimensional matter with broken time-reversal symmetry. In Chern insulators, nontrivial bulk band topology is expressed by chiral states that carry current along sample edges without dissipation. Here, the quantum anomalous Hall (QAH) effect refers to QH effects that occur in the absence of external magnetic fields due to spontaneously broken time-reversal symmetry. The QAH effect has now been realized in four different classes of two-dimensional materials: (i) thin films of magnetically (Cr- and/or V-) doped topological insulators in the (Bi,Sb) 2 T 3 family, (ii) thin films of the intrinsic magnetic topological insulator MnBi 2 Te 4 , (iii) moiré materials formed from graphene, and (iv) moiré materials formed from transition-metal dichalcogenides. In this Colloquium, the physical mechanisms responsible for each class of QAH insulator are reviewed, with both differences and commonalities highlighted, and potential applications of the QAH effect are commented upon.

36 MATERIALS SCIENCE↗

Light–Material Interactions Using Laser and Flash Sources for Energy Conversion and Storage Applications

Abstract This review provides a comprehensive overview of the progress in light–material interactions (LMIs), focusing on lasers and flash lights for energy conversion and storage applications. We discuss intricate LMI parameters such as light sources, interaction time, and fluence to elucidate their importance in material processing. In addition, this study covers various light-induced photothermal and photochemical processes ranging from melting, crystallization, and ablation to doping and synthesis, which are essential for developing energy materials and devices. Finally, we present extensive energy conversion and storage applications demonstrated by LMI technologies, including energy harvesters, sensors, capacitors, and batteries. Despite the several challenges associated with LMIs, such as complex mechanisms, and high-degrees of freedom, we believe that substantial contributions and potential for the commercialization of future energy systems can be achieved by advancing optical technologies through comprehensive academic research and multidisciplinary collaborations.

Materials Science↗

Characterization of actinide abundances and isotopic compositions by HR-ICP-MS. Part 2: Results from actinide doping studies

Previously, we presented actinide isotopic and elemental data from fallout melt glass that was measured using high-resolution inductively coupled plasma mass spectrometry (HR-ICP-MS). Direct comparison between these measurements and ‘gold standard’ data obtained by multi-collector ICP-MS showed broad overlap, indicating that HR-ICP-MS is a potentially valuable technique for producing actinide elemental and isotopic data on a relatively rapid timescale. To test the usefulness of this technique further, we doped varying amounts of uranium certified reference materials (CRMs) into a rhyolitic rock standard to establish the effects of uranium concentration and isotopic composition on the accuracy of uranium isotopic analyses by HR-ICP-MS. This also enabled us to quantify peak tailing effects from 238 U on the measurement of 239 Pu and 237 Np, which in turn allows us to constrain correction factors based on measured 237 Np/ 238 U and 239 Pu/ 238 U ratios. A second doping study involved the addition of a mixed actinide standard into three samples with different matrix compositions (termed soil, city, and seawater) to assess whether sample chemistry affects the accuracy and precision of these analyses. Results suggest that this is not the case. Systematic offsets were not observed in elemental or isotopic data derived from the three matrix samples. Results indicate that useful actinide isotopic data can be obtained from whole rock solutions by HR-ICP-MS. Our findings also have implications for solid sampling techniques such as laser ablation ICP-MS, which do not require sample dissolution.

38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEA↗

Tuning energy barriers by doping 2D group-IV monochalcogenides

Structural degeneracies underpin the ferroic behavior of anisotropic next-generation two-dimensional materials and lead to peculiar two-dimensional structural transformations under external fields, charge doping, and/or temperature. The most direct indicator of the ease of these transformations is an elastic energy barrier, defined as the energy difference between the (degenerate) structural ground state unit cell and a unit cell with an increased structural symmetry. Proximity of a two-dimensional material to a bulk substrate can affect the magnitude of the critical fields and/or temperature at which these transformations occur, with the first effect being a relative charge transfer, which could trigger a structural quantum phase transition. With this physical picture in mind, we report the effect of modest charge doping (within -0.2 and +0.2 electrons per unit cell) on the elastic energy barrier J s of ferroelastic black phosphorene and nine ferroelectric/ferroelastic monochalcogenide monolayers. J s is the energy needed to create a Pnm2 1 →P4/nmm two-dimensional structural transformation, and it is sensitive to the orbital character of the electronic charge added or removed. Similar to the effect on the elastic energy barrier of ferroelastic SnO monolayers, group-IV monochalcogenide monolayers show a tunable elastic energy barrier for similar amounts of doping, and a decrease (increase) of J s can be engineered under a modest hole (electron) doping of not more than one-tenth of an electron or a hole per atom.

36 MATERIALS SCIENCE↗

Defect chemistry and doping of BiCuSeO

While p-type BiCuSeO is a well-known mid-temperature oxide thermoelectric (TE) material, computations predict that superior TE performance can be realized through n-type doping. In this study, we use first-principles defect calculations to show that Cu vacancies are responsible for the native p-type self doping; yet, we find that BiCuSeO is n-type dopable under Cu-rich growth conditions, where the formation of Cu vacancies is suppressed. We computationally survey a broad suite of 23 dopants and find that only Cl and Br are effective n-type dopants. Therefore, we recommend that future experimental doping efforts utilize phase boundary mapping to optimize the electron concentration and resolve the anomalous p–n–p transitions observed in halogen-doped BiCuSeO. The prospect of n-type doping, as revealed by our defect calculations, paves the path for rational design of BiCuSeO chemical analogues with similar doping behavior and even better TE performance.

36 MATERIALS SCIENCE↗

Acceptor dopant mediated electrical property modification in Bi0.5Na0.5TiO3-based piezoceramic

The effect of Mn and Fe dopants on the electromechanical and electrochemical properties of 0.88[Bi 0.5 Na 0.5 ]TiO 3 –0.08[Bi 0.5 K 0.5 ]TiO 3 –0.04[Bi 0.5 Li 0.5 ]TiO 3 piezoceramic is investigated with particular emphasis on complex impedance in the temperature range from 450 to 600 °C. The impedance spectra have been simulated with equivalent circuits in order to extract bulk and grain boundary characteristics and to determine activation energies of conduction. Mn and Fe dopants considerably enhance the mechanical quality factor and decrease the dielectric loss compared to the undoped composition. Mn doping leads to dramatically higher resistivity in the bulk and a modest increase in the bulk activation energy. On the other hand, conductivity increases dramatically via Fe doping with a significant lowering of activation energy in the bulk and corresponding raising of the activation energy at grain boundaries in comparison to Mn-doped and undoped ceramic. The bulk conductivity of Fe-doped piezoceramic reaches as high as 0.01 S cm -1 at 600 °C.

36 MATERIALS SCIENCE↗

Unraveling the Correlation between Raman and Photoluminescence in Monolayer MoS 2 through Machine‐Learning Models

Abstract 2D transition metal dichalcogenides (TMDCs) with intense and tunable photoluminescence (PL) have opened up new opportunities for optoelectronic and photonic applications such as light‐emitting diodes, photodetectors, and single‐photon emitters. Among the standard characterization tools for 2D materials, Raman spectroscopy stands out as a fast and non‐destructive technique capable of probing material's crystallinity and perturbations such as doping and strain. However, a comprehensive understanding of the correlation between photoluminescence and Raman spectra in monolayer MoS 2 remains elusive due to its highly nonlinear nature. Here, the connections between PL signatures and Raman modes are systematically explored, providing comprehensive insights into the physical mechanisms correlating PL and Raman features. This study's analysis further disentangles the strain and doping contributions from the Raman spectra through machine‐learning models. First, a dense convolutional network (DenseNet) to predict PL maps by spatial Raman maps is deployed. Moreover, a gradient boosted trees model (XGBoost) with Shapley additive explanation (SHAP) to bridge the impact of individual Raman features in PL features is applied. Last, a support vector machine (SVM) to project PL features on Raman frequencies is adopted. This work may serve as a methodology for applying machine learning to characterizations of 2D materials.

Lu, Ang‐Yu↗

Magnetostriction and temperature dependent Gilbert damping in boron doped Fe 80 ⁢Ga 20 thin films

Magnetic thin films with strong magnetoelastic coupling and low Gilbert damping are key materials for many magnetoelectric devices. Here, we investigated the effects of boron doping concentration on magnetostriction and temperature dependent Gilbert damping in magnetron sputtered (Fe 80 ⁢Ga 20 ) 1−𝑥 ⁢B 𝑥 films. A crystalline to amorphous structural transition was observed for a boron content near 8% and coincided with a decrease in coercivity from 76 Oe to 3 Oe. A 10% doping concentration is optimal for achieving both large magnetostriction of 48.8 ppm and low Gilbert damping of 6×10 −3 . The temperature dependence of the damping shows an increase at low temperatures with a peak around 40 K, and we associate the relative increase Δ⁢𝛼/𝛼 RT with magnetoelastic contributions to the damping, which has a maximum of 55.7% at 8% boron. An increase in the inhomogeneous linewidth broadening was observed in the structural transition regime at about 8% boron concentration. Furthermore, this study suggests that incorporation of glass forming elements, in this case boron, into Fe 80 ⁢Ga 20 is a practical pathway for simultaneously achieving enhanced magnetoelastic coupling and reduced Gilbert damping.

Cryogenics↗

Counterion Control and the Spectral Signatures of Polarons, Coupled Polarons, and Bipolarons in Doped P3HT Films

When an electron is removed from a conjugated polymer, such as poly(3-hexylthiophene-2,5-diyl) (P3HT), the remaining hole and associated change in the polymer backbone structure from aromatic to quinoidal are referred to as a polaron. Bipolarons are created by removing the unpaired electron from an already-oxidized polymer segment. In electrochemically-doped P3HT films, polarons, and bipolarons are readily observed, but in chemically-doped P3HT films, bipolarons rarely form. This is explained by studying the effects of counterion position on the formation of polarons, strongly coupled polarons, and bipolarons using both spectroscopic and X-ray diffraction experiments and time-dependent density functional theory calculations. The counterion positions control whether two polarons spin-pair to form a bipolaron or whether they strongly couple without spin-pairing are found. When two counterions lie close to the same polymer segment, bipolarons can form, with an absorption spectrum that is blueshifted from that of a single polaron. Otherwise, polarons at high concentrations do not spin-pair, but instead J-couple, leading to a redshifted absorption spectrum. The counterion location needed for bipolaron formation is accompanied by a loss of polymer crystallinity. Finally, these results explain the observed formation order of single polarons, coupled single polarons, and singlet bipolarons in electrochemically- and chemically-doped conjugated polymers.

36 MATERIALS SCIENCE↗

Conduction band convergence and local structure distortion for superior thermoelectric performance of GaSb-doped n-type PbSe thermoelectrics

Achieving high-stability thermoelectric materials with excellent average power factor and figure of merit is crucial for maximizing the output power density and conversion efficiency of thermoelectric devices. In this study, GaSb is added to PbSe as an n-type dopant to form stable solid solutions. Doping with GaSb flattens the conduction band and reduces the energy difference between the Σ and L conduction bands, thereby significantly improving the Seebeck coefficient. Herein, the Ga and Sb atoms co-occupy the vacant Pb sites, unlike in the case of traditional single-element doping, as is verified by density functional theory calculations. The resultant structural distortion is confirmed via transmission electron microscopy. This local structure distortion caused by GaSb doping reduces the lattice thermal conductivity. Consequently, the Pb 0.99875 (GaSb) 0.00125 Se sample exhibits a record-high average power factor of ~22.37 μW cm −1 K −2 and a high average figure of merit of ~0.94 in the temperature range of 300‒873 K. Furthermore, the introduction of interstitial Cu and discordant Zn atoms further reduces the lattice thermal conductivity. The Pb 0.99875 (GaSb) 0.00125 Zn 0.01 Se 1.01 -0.3%Cu sample exhibits a low lattice thermal conductivity of ~0.4 W m −1 K −1 at 873 K and a record-high average figure of merit of ~1.01 in the temperature range of 300‒873 K.

36 MATERIALS SCIENCE↗