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10-micron spectra of many extreme carbon stars reveal a prominent emission feature near 11 microns. This is compared with laboratory spectra of SiC grains. Two distinct types of features are found, perhaps indicative of different mechanisms of grain formation in different stars. Estimates are made of probable column densities and total masses of SiC in the circumstellar shells.
An investigation is made of pressureless sintering of commercially available alpha-SiC powders at temperatures between 1900 and 2150 C for periods of 10 to 240 min under one atmosphere of argon pressure. It is found that alpha-SiC powder containing boron and carbon sintering aids is sinterable at 2150 C for a period of 30 min to a high final density (greater than 96 percent of theoretical). In alpha-SiC powder containing aluminum and carbon sintering aids, the final density achieved is only about 80 percent of theoretical. Determinations are made of room temperature and high temperature (1370 C) flexure strength and oxidation resistance on sintered high density (more than 96 percent of theoretical) alpha-SiC (boron, carbon) material. It is found that both the strength and the resistance to oxidation are equivalent and comparable to those of the sintered alpha-SiC which represents the state of the art.
The results of an attempt to coat optical flats and replace echelle gratings with ion-deposited SiC are reported. Deposition was performed by bombarding a SiC target with an ion beam angled 45 deg relative to the target. Half the target was covered with stainless steel to furnish a comparison opportunity. After precleaning SiC coatings of 300-2200 A thickness were deposited. The specimens had previously been coated with either Au or Al or were left blank. Reflectance and diffraction data were taken of the finished flats and gratings. The SiC-coated flats performed as well as uncoated flats while the echelles exhibited deteriorating performance with increasing coating thickness. Further studies are indicated on the effect of coating thickness on surface roughness.
The most suitable SiC mass for injection molding of SiC articles (for subsequent pressureless sintering) consisted of beta SiC 84, a wax mixture 8, and polyethylene or polystyrene 8 parts. The most effective method for adding the binders was by dissolving them in a solvent and subsequent evaporation. The sequence of component addition was significant, and all parameters were optimized together rather than individually.
The sintering behavior of ultrafine SiC powder with average particle size of about 0.01-0.06 microns produced by a vapor phase reaction of the Me4Si-H2 system was studied at the temperature range of 1400-2050 deg. It was found that the homogeneous dispersion of C on SiC particles is important to remove the surface oxide layer effectively. B and C and inhibitive effect on SiC grain growth.
The 4-point bending strength of 4 grades of hot-pressed SiC was determined at different temperatures. With a transgranular mode of fracture the values for bending strength are retained up to high temperatures. For intergranular fracture the decrease of strength is governed by subcritical crack growth. The intergranular fracture is caused by a high content of silicate glassy phase at the grain boundaries of hot-pressed SiC.
Conventional and microfocus X-radiographic techniques were compared to determine relative detectability limits for voids in green and sintered SiC and Si3N4. The relative sensitivity of the techniques was evaluated by comparing their ability to detect voids that were artificially introduced by a seeding process. For projection microfocus radiography the sensitivity of void detection at a 90/95 probability of detection/confidence level is 1.5% of specimen thickness in sintered SiC and Si3N4. For conventional contact radiography the sensitivity is 2.5% of specimen thickness. It appears that microfocus projection radiography is preferable to conventional contact radiography in cases where increased sensitivity is required and where the additional complexity of the technique can be tolerated.
This study examines the effect of modifications of the chemical structure of the monomers on the properties of the polymeric precursor and and ceramic fibers. A group of silaneamines, R'-Si (NH-R) sub 3, taken from the series where R' is methyl or phenyl and R is n-propyl, n-butyl, phenyl or allyl, are converted to polycarbosilazanes by heating in excess of 500 C. Resins obtained from this polymerization are characterized by NMR and IR spectroscopy and GPC. Each resin is tested for fiber-forming properties. Resin samples and fibers are hydrolytically cured. Thermogravimetric analyses are conducted on the cured resins to compare the relative thermal stability and examine the pyrolysis process. Cured fibers are tested for tensil strength.
Surface morphologies of SiC deposits obtained via chemical vapor deposition (CVD) were studied as functions of substrate surface temperature and the concentration of the silicon and carbon source material, methyltrichlorosilane. Substrates of graphite and alpha-SiC crystals were used. Explanations of the observed morphologies on graphite substrates and their marked changes with temperature are given in terms of chemical kinetics and mass transport arguments. The results of thermodynamic calculations were used to help explain the observed morphologies of the deposits on alpha-SiC substrates.
Mechanical properties and stress-strain behavior were evaluated for several types of commercially fabricated aluminum matrix composites, containing up to 40 vol pct discontinuous SiC whisker, nodule, or particulate reinforcement. The elastic modulus of the composites was found to be isotropic, to be independent of type of reinforcement, and to be controlled solely by the volume percentage of SiC reinforcement present. The yield/tensile strengths and ductility were controlled primarily by the matrix alloy and temper condition. Type and orientation of reinforcement had some effect on the strengths of composites, but only for those in which the whisker reinforcement was highly oriented. Ductility decreased with increasing reinforcement content; however, the fracture strains observed were higher than those reported in the literature for this type of composite. This increase in fracture strain was probably attributable to cleaner matrix powder, better mixing, and increased mechanical working during fabrication. Comparison of properties with conventional aluminum and titanium structural alloys showed that the properties of the low-cost, lightweight composites demonstrated very good potential for application to aerospace structures.
Hot isostatic pressing and conventional furnace brazing effective under right conditions. Study performed showed feasibility of welding SiC using several welding and brazing techniques. Use of SiC improves engine efficiency by allowing increase in operating temperature. SiC successfully hot-pressure-welded at 3,550 degrees F (1,950 degrees C) in argon. Refinements of solid-state welding and brazing procedures used sufficient for some specific industrial applications.
The effects of surface treatment and microstructure, especially abnormal grain growth, on the strength of sintered SiC were studied. The surfaces of sintered SiC were treated with 400, 800 and 1200 grit diamond wheels. Grain growth was induced by increasing the sintering times at 2050 C. The beta to alpha transformation occurred during the sintering of beta-phase starting materials and was often accompanied by abnormal grain growth. The overall strength distributions were established using Weibull statistics. The strength of the sintered SiC is limited by extrinsic surface flaws in normal-sintered specimens. The finer the surface finish and grain size, the higher the strength. But the strength of abnormal sintering specimens is limited by the abnormally grown large tabular grains. The Weibull modulus increases with decreasing grain size and decreasing grit size for grinding.
SiC based sinters are produced by pressureless sintering from a SiC-AlN solid solution containing Al2 to 20, N 0.2 to 10, O 0.2 to 5, a Group IIIB element 0 to 15 percent, the remainder being Si and C. Thus, a 90:10 mixture of SiC and AlN powders were cold pressed at 2000 kg/sq cm and sintered for 5 hours at 2100 C in a nitrogen atmosphere. The resulting product had density of 3.11 g/cu cm and bending strength at ambient and 1400 C at 68.5 and 66.3 kg/sq mm.
The sintering behavior of alpha-SiC with B and C sintering aids and without sintering aids was investigated experimentally. The sintering was performed for 30-60 min in argon flow at 2150 and 2200 C. The density of the sintered bars was determined by weighing and measuring the bars, four-point flexure tests were conducted on machined bars, and the Weibull modulus was determined by regression analysis. It is found that type 1 alpha-SiC powder, which does not densify, can be sintered to a high final density (in excess of 96 percent of the theoretical value) using B and C sintering aids. Flexure test results and Weibull modulus data suggest that the strength of the alpha-SiC ceramic is greatly affected by processing flaws and also by inclusions and machining flaws.
Conventional and microfocus X-radiographic techniques were compared to determine relative detectability limits for voids in green and sintered SiC and Si3N4. The relative sensitivity of the techniques was evaluated by comparing their ability to detect voids that were artificially introduced by a seeding process. For projection microfocus radiography the sensitivity of void detection at a 90/95 probability of detection/confidence level is 1.5 percent of specimen thickness in sintered SiC and Si3N4. For conventional contact radiography the sensitivity is 2.5 percent of specimen thickness. It appears that microfocus projection radiography is preferable to conventional contact radiography in cases where increased sensitivity is required and where the additional complexity of the technique can be tolerated.
An investigation was conducted to examine the deformation and fracture behavior of single-crystal and sintered polycrystalline SiC surfaces exposed to cavitation. Cavitation erosion experiments were conducted in distilled water at 25 C by using a magnetostrictive oscillator in close proximity (1 mm) to the surface of SiC. The horn frequency was 20 kHz, and the double amplitude of the vibrating disk was 50 microns. The results of the investigation indicate that the SiC (0001) surface could be deformed in a plastic manner during cavitation. Dislocation etch pits were formed when the surface was chemically etched. The number of defects, including dislocations in the SiC (0001) surface, increased with increasing exposure time to cavitation. The presence of intrinsic defects such as voids in the surficial layers of the sintered polycrystalline SiC determined the zones at which fractured grains and fracture pits (pores) were generated. Single-crystal SiC had superior erosion resistance to that of sintered polycrystalline SiC.
The influence of additions of SiC whiskers on the elastic modulus and flexural strength of phosphate ceramic foam is assessed. It is shown that the incorporation into the material composition of even small amounts (2.4 vol%) of SiC whiskers enhances the impact toughness and heat resistance of the ceramic foam. A 12.3 vol% of SiC whiskers leads to a more than threefold increase of the flexural strength. Strengthening of the phosphate ceramic foam is due to the fact that the whiskers hinder the propagation of matrix crack by increasing the work of matrix fracture. The whiskers reinforce only that volume of material which is occupied by solid matter, whereas they do not reinforce the pores.
Reflectivity and scattering measurements on samples of SiC manufactured by a variety of processes. Measurements were made from near-normal to grazing incidence at wavelengths in the range of 114 to 1216 A. CVD SiC displays the highest reflectivity at EUV wavelengths and normal incidence. At grazing incidence, Si-rich samples show reflectivity cutoff identical to polycrystalline Si. From the limited data available for single-crystal material, it is concluded that CVD material has comparable performance.