The mechanical behavior of tantalum carbide and magnesium oxide
Mechanical behavior of tantalum carbide and magnesium oxide polycrystalline ceramics
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Mechanical behavior of tantalum carbide and magnesium oxide polycrystalline ceramics
Carbon sources effects on niobium carbides, and determination of high temperature flexural strength, flexural creep, and thermal expansion up to 2550 deg C for various materials
Hot press fabrication effects on phase equilibrium and physical properties of refractory metal carbide-graphite composites
Single crystals of carbides by floating zone technique
Microstructure and mechanical properties of carbides
Crystal lattice octahedral subcells role in Mo carbides electrical and bonding characteristics from heat capacity and superconducting transition temperature measurements
Hall coefficient and electrical resistivity of tantalum carbide as function of carbon content and temperature
Refractory elements effect on complex carbides formation in Ni base superalloys at intermediate temperatures
Low temperature heat capacities for molybdenum carbides studied for similarities of thermodynamic and superconducting properties
Low temperature heat capacities of superconducting niobium and tantalum carbides measured for carbon concentration and crystal structure effects
Transition metals improve the overall light output and the output in particular regions of the electroluminescent of a silicon carbide semiconductor device. These metals /impurities/ introduce levels that can be pumped electrically and affect the efficiency of the recombination process involved in emission of radiation.
Controlling mechanical properties of hot pressed metal carbide-graphite composite materials
Figures of merit for experimental silicon carbide backward diode operable to 1000 degrees K
Optimal growths of silicon carbide polytype crystals by methyltrichlorosilane reduction
Dynamic strain aging in carbide strengthened molybdenum alloys
Development of silicon carbide hot electron emitter
Floating zone technique for vanadium carbide single crystal growth
Cubic /beta/ silicon carbide films deposition by volatilization in presence of acetylene