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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 595 records · Page 33
All sourcesNASA NTRSDOE OSTI
DOE OSTI2011

Polyamorphous transition in amorphous fullerites C{sub 70}

Samples of amorphous fullerites C{sub 70} have been obtained by mechanical activation (grinding in a ball mill). The structure of the samples has been investigated by neutron and X-ray diffraction. The high-temperature (up to 1200 Degree-Sign C) annealing of amorphous fullerites revealed a polyamorphous transition from molecular to atomic glass, which is accompanied by the disappearance of fullerene halos at small scattering angles. Possible structural versions of the high-temperature amorphous phase are discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2011

Study of the solid-state amorphization of (GaSb){sub 1-x}Ge{sub x} semiconductors by real-time neutron diffraction and electron microscopy

The spontaneous amorphization of high-pressure quenched phases of the GaSb-Ge system has been studied by neutron diffraction while slowly heating the phases at atmospheric pressure. The sequence of changes in the structural parameters of the initial crystalline phase and the final amorphous phase is established. The behavior of the phases and the correlation in the structural features of the phase transitions and anomalous thermal effects exhibit signs of the inhomogeneous model of solid-state amorphization.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Electrooptical properties and structural features of amorphous ITO

Thin indium-tin oxide (ITO) films are deposited onto cold substrates by magnetron-assisted sputtering. The dependences of the structural, electrical, and optical properties of the films on the oxygen content in the atmosphere of sputtering and the growth rate are studied. It is shown that, if the substrate temperature is no higher than the ITO crystallization temperature and the conditions of growth deviate from the optimal relationship between the oxygen pressure and the growth rate, the resistance of the layers can be six or seven orders of magnitude higher than the resistance of conducting amorphous layers and reach hundreds of megaohms. At the same time, the optical properties of insulating layers in the visible spectral region are completely identical to the properties of the conducing amorphous modification. A conceptual model of defects responsible for the insulating properties of amorphous ITO is proposed.

36 MATERIALS SCIENCE↗
DOE OSTI2016

On the formation of silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiO{sub x}:H (0 < x < 2) with time-modulated dc magnetron plasma

Activation of the process of amorphous-silicon-nanocluster formation in a hydrogenated amorphous- silicon suboxide matrix with time-modulated dc discharge plasma is investigated. The plasma is modulated by repeatedly switching on and off a dc magnetron magnetic coil. It is demonstrated that the resulting self-induction effect leads eventually to an increase in the probability of collisions between discharge electrons and gaseous components. The infrared (IR) spectra of the films showed that plasma modulation enhances predominantly the content of bridging oxygen in the a-SiO{sub x}:H matrix by strengthening the oxygenionization process. It is assumed that this also increases the concentration of silicon nanoclusters ncl-Si with an oxidized outer surface in the plasma and, thus, enhances the ncl-Si flux toward the electrodes of the dc magnetron. The photoluminescence spectra include two broad overlapping bands characteristic of amorphous ncl-Si with maxima in the range of 600–1000 nm.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Lifetime of excitons localized in Si nanocrystals in amorphous silicon

The introduction of nanocrystals plays an important role in improving the stability of the amorphous silicon films and increasing the carrier mobility. Here we report results of the study on the photoluminescence and its dynamics in the films of amorphous hydrogenated silicon containing less than 10% of silicon nanocrystals. The comparing of the obtained experimental results with the calculated probability of the resonant tunneling of the excitons localized in silicon nanocrystals is presented. Thus, it has been estimated that the short lifetime of excitons localized in Si nanocrystal is controlled by the resonant tunneling to the nearest tail state of the amorphous matrix.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Characteristics of Amorphous As{sub 2}S{sub 3} Semiconductor Films Obtained via Spin Coating

Centrifugation is used in fabricating, e.g., films with large areas and/or thicknesses of several micrometers. However, it has yet to be widely employed for chalcogenide compounds, due to their relatively weak solubility in most solvents. Determining the optimum conditions for preparing solutions of chalcogenide compounds and obtaining films via centrifugation is therefore of great interest. Specific features of amorphous arsenic sulfide (As{sub 2}S{sub 3}) films prepared via the centrifugation of solutions in n-butylamine have been studied. These films were characterized by means of X-ray diffraction analysis, IR spectroscopy, atomic-force microscopy and Raman spectroscopy. It was shown that amorphous As{sub 2}S{sub 3} films have a greater elasticity modulus than those of analogous composition produced via thermal evaporation in vacuum, or As{sub 2}S{sub 3} glass. A structural model based on arsenic sulfide clusters whose surfaces are bound by negatively and positively charged ions is used to explain the experimental results obtained in this work. DC measurements show that the amorphous films exhibit semiconductor-type conductivity. Their room temperature conductivity is ~10{sup −15} S/cm, which indicates good dielectric properties. The films are optically transparent starting from the yellow spectral range, making them promising functional materials for engineering applications in optics and photonics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

A Change in the Debye Temperature of a Single-Component Substance upon Amorphization

A method for calculating the Debye temperature of a single-component substance in the amorphous state is proposed based on a nonlinear dependence of first coordination number k{sub n} of the given structure on its packing factor k{sub p} as established previously. Proceeding from previously defined parameters of the Mie–Lennard-Jones potential, the Debye temperatures have been calculated for some pure crystalline and amorphous metals, diamond, silicon, and germanium, which are in good agreement with estimations reported by other researchers. It is shown that a minimum specific Helmholtz free energy is attained at k{sub p} = 0.45556, which means that this packing corresponds to a thermodynamically stable amorphous structure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Amorphous lithium lanthanum titanate for solid-state microbatteries

Lithium lanthanum titanate (LLTO) is a promising solid state electrolyte for solid state batteries due to its demonstrated high bulk ionic conductivity. However, crystalline LLTO has a relatively low grain boundary conductivity, limiting the overall material conductivity. In this work, we investigate amorphous LLTO (a-LLTO) thin films grown by pulsed laser deposition (PLD). By controlling the background pressure and temperature we are able to optimize the ionic conductivity to 3 × 10 –4 S/cm and electronic conductivity to 5 × 10 –11 S/cm. XRD, TEM, and STEM/EELS analysis confirm that the films are amorphous and indicate that oxygen background gas is necessary during the PLD process to decrease the oxygen vacancy concentration, decreasing the electrical conductivity. Amorphous LLTO is deposited onto high voltage LiNi 0.5 Mn 1.5 O 4 (LNMO) spinel cathode thin films and cycled up to 4.8 V vs. Li showing excellent capacity retention. Finally, these results demonstrate that a-LLTO has the potential to be integrated into high voltage thin film batteries.

36 MATERIALS SCIENCE↗
DOE OSTI2020

A Coupled Experimental and Simulation Approach to Investigate the Impact of Grain Growth, Amorphization, and Grain Subdivision in Accident Tolerant U 3 Si 2 Light Water Reactor Fuel

Triuranium disilicide (U 3 Si 2 ) is being considered as an alternative accident tolerant fuel (ATF) due to its higher thermal conductivity. However, there is uncertainty in its use due to a lack of irradiation data at light water reactor (LWR) conditions. In this project, we used an integrated experimental and simulation approach to answer two significant questions pertaining to U 3 Si 2 that were not investigated by the Fuel Cycle Research and Development (FCRD) and Nuclear Energy Advanced Modeling and Simulation (NEAMS) programs: (1) Will grain growth in the hotter portions of the fuel significantly impact U 3 Si 2 LWR fuel behavior? (2) Under what conditions do grain subdivision and amorphization occur in U 3 Si 2 and will either occur at LWR conditions? Our approach to answer these questions used in situ ion irradiation and annealing to investigate grain growth, grain subdivision, and amorphization, along with mesoscale simulations using the MARMOT tool. We found that while the grain boundary mobility of U 3 Si 2 is larger than that of UO 2 , grain growth in U 3 Si 2 fuel pellets will be less than in UO 2 and may be neglected due to the lower thermal conductivity and thus lower centerline temperature. We also found that amorphization will not occur in U 3 Si 2 above 600 K, such that it is not likely to occur at typical LWR operating conditions. Grain subdivision will occur at LWR conditions and will likely occur at lower burnups than in UO 2 .

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2019

Effect of Domain Size, Boundary, and Loading Conditions on Mechanical Properties of Amorphous Silica: A Reactive Molecular Dynamics Study

Mechanical properties are very important when choosing a material for a specific application. They help to determine the range of usefulness of a material, establish the service life, and classify and identify materials. The size effect on mechanical properties has been well established numerically and experimentally. However, the role of the size effect combined with boundary and loading conditions on mechanical properties remains unknown. In this paper, by using molecular dynamics (MD) simulations with the state-of-the-art ReaxFF force field, we study mechanical properties of amorphous silica (e.g., Young’s modulus, Poisson’s ratio) as a function of domain size, full-/semi-periodic boundary condition, and tensile/compressive loading. We found that the domain-size effect on Young’s modulus and Poisson’s ratio is much more significant in semi-periodic domains compared to full-periodic domains. The results, for the first time, revealed the bimodular and anisotropic nature of amorphous silica at the atomic level. We also defined a “safe zone” regarding the domain size, where the bulk properties of amorphous silica can be reproducible, while the computational cost and accuracy are in balance.

bimodular materials↗
DOE OSTI2016

Optical and Structural Properties of Microcrystalline GaN on an Amorphous Substrate Prepared by a Combination of Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition

Microscale platelet-shaped GaN grains were grown on amorphous substrates by a combined epitaxial growth method of molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). First, MBE GaN was grown on an amorphous substrate as a pre-orienting layer and its structural properties were investigated. Second, MOCVD grown GaN samples using the different growth techniques of planar and selective area growth (SAG) were comparatively investigated by transmission electron microscopy (TEM), cathodoluminescence (CL), and photoluminescence (PL). In MOCVD planar GaN, strong bound exciton peaks dominated despite the high density of the threading dislocations (TDs). In MOCVD SAG GaN, on the other hand, TDs were clearly reduced with bending, but basal stacking fault (BSF) PL peaks were observed at 3.42 eV. The combined epitaxial method not only provides a deep understanding of the growth behavior but also suggests an alternative approach for the growth of GaN on amorphous substances.

14 SOLAR ENERGY↗
NASA NTRS2022

Laser Patterning Assisted Devitrification and Domain Engineering of Amorphous and Nanocrystalline Alloys

We have investigated laser-patterning and devitrification as a novel method to realize emergent properties in modified regions at the ribbon surface consisting of periodic localized laser spots thermally treated under rapid heating and cooling conditions. Fe-based amorphous ribbons were annealed for systematically varied laser power. Extremely high heating and cooling rates on the order of 10(exp 8)-10(exp 10)K/s have been estimated by finite element analysis simulations. Observations suggest surface melting followed by rapid solidification fast enough to quench and form an amorphous structure upon cooling. Diffusion of heat occurs from the laser irradiated surface region so that a finite volume of material surrounding this region rises in temperature above the crystallization temperature relevant for conventional isothermal annealing experiments. The underlying mechanism of laser annealing and consequences of heat transients involved are discussed in terms of impacts upon micro/nanostructure, residual stresses, and magnetic domain structure surrounding the laser irradiated region. The study illustrates the potential to exploit spatially optimized phase transformations in a scalable manufacturing process of amorphous and nanocrystalline alloys to locally access otherwise inaccessible extreme heating and cooling rates.

Amorphous ribbons↗
DOE OSTI2020

Memristive Behavior Enabled by Amorphous–Crystalline 2D Oxide Heterostructure

The emergence of memristive behavior in amorphous–crystalline 2D oxide heterostructures, which are synthesized by atomic layer deposition (ALD) of a few-nanometer amorphous Al 2 O 3 layers onto atomically thin single-crystalline ZnO nanosheets, is demonstrated. The conduction mechanism is identified based on classic oxygen vacancy conductive channels. ZnO nanosheets provide a 2D host for oxygen vacancies, while the amorphous Al 2 O 3 facilitates the generation and stabilization of the oxygen vacancies. The conduction mechanism in the high-resistance state follows Poole–Frenkel emission, and in the the low-resistance state is fitted by the Mott–Gurney law. From the slope of the fitting curve, the mobility in the low-resistance state is estimated to be ≈2400 cm 2 V -1 s -1 , which is the highest value reported in semiconductor oxides. When annealed at high temperature to eliminate oxygen vacancies, Al is doped into the ZnO nanosheet, and the memristive behavior disappears, further confirming the oxygen vacancies as being responsible for the memristive behavior. The 2D heterointerface offers opportunities for new design of high-performance memristor devices.

2D heterostructures↗
DOE OSTI2016

Distinct Short-Range Order Is Inherent to Small Amorphous Calcium Carbonate Clusters (<2 nm)

Amorphous intermediate phases are vital precursors in the crystallization of many biogenic minerals. While inherent short-range orders have been found in amorphous calcium carbonates (ACCs) relating to different crystalline forms, it has never been clarified experimentally whether such orders already exist in very small clusters less than 2 nm in size. Here, we studied the stability and structure of 10,12-pentacosadiynoic acid (PCDA) protected ACC clusters with a core size of ca. 1.4 nm consisting of only seven CaCO 3 units. Ligand concentration and structure are shown to be key factors in stabilizing the ACC clusters. More importantly, even in such small CaCO 3 entities, a proto-calcite short-range order can be identified but with a relatively high degree of disorder that arises from the very small size of the CaCO 3 core. Our findings support the notion of a structural link between prenucleation clusters, amorphous intermediates, and final crystalline polymorphs, which appears central to the understanding of polymorph selection.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Thick amorphous complexion formation and extreme thermal stability in ternary nanocrystalline Cu-Zr-Hf alloys

Building on the recent discovery of tough nanocrystalline Cu-Zr alloys with amorphous intergranular films, this paper investigates ternary nanocrystalline Cu-Zr-Hf alloys with a focus on understanding how alloy composition affects the formation of disordered complexions. Binary Cu-Zr and Cu–Hf alloys with similar initial grain sizes were also fabricated for comparison. The thermal stability of the nanocrystalline alloys was evaluated by annealing at 950 °C (>95% of the solidus temperatures), followed by detailed characterization of the grain boundary structure. All of the ternary alloys exhibited exceptional thermal stability comparable to that of the binary Cu-Zr alloy, and remained nanocrystalline even after two weeks of annealing at this extremely high temperature. Despite carbide formation and growth in these alloys during milling and annealing, the thermal stability of the ternary alloys is mainly attributed to the formation of thick amorphous intergranular films at high temperatures. Our results show that ternary alloy compositions have thicker boundary films compared to the binary alloys with similar global dopant concentrations. While it is not required for amorphous complexion formation, this work shows that having at least three elements present at the interface can lead to thicker grain boundary films, which is expected to maximize the previously reported toughening effect.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Icosahedral short-range order in amorphous Cu80Si20 by ab initio molecular dynamics simulation study

Short-range order in liquid and amorphous structures of Cu80Si20 is studied by ab initio molecular dynamics simulations. We performed the simulations at 1140 and 300 K respectively to investigate the local structure change from liquid to amorphous. The result of structure factor in comparison with experimental data indicates that our simulation of amorphous Cu80Si20 is reliable. By using the bond-angle distribution function, Honeycutt–Andersen index, Voronoi tessellation method, and the atomistic cluster alignment method, the icosahedral short-range order in the system is revealed. Strong Cu–Si interaction was also observed.

36 MATERIALS SCIENCE↗
DOE OSTI2022

A molecular dynamics survey study of impact-induced amorphization in yttria nanoparticles

The impact of a single yttria (Y 2 O 3 ) nanoparticle onto a yttria substrate was studied as a function of particle velocity (300–1200 m/s) and diameter (5–12 nm) for three particle orientations and two substrate orientations using molecular dynamics simulations. Impacts resulted in minimal dislocation motion but extensive disordering of the crystal lattice without approaching the melting temperature. The resulting amorphous microstructure was both precisely coincident with plastic strain and retained until the end of the simulation, suggesting a deformation mechanism of amorphization-facilitated viscous flow. Further analysis revealed that the degree of amorphization depended primarily on the impact velocity and secondarily on the orientations of the particle and substrate, with significant second-order effects from variable interactions.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2014

Tellurium n-type doping of highly mismatched amorphous GaN 1-x As x alloys in plasma-assisted molecular beam epitaxy

In this paper we report our study on n-type Te doping of amorphous GaN 1-x As x layers grown by plasma-assisted molecular beam epitaxy. We have used a low temperature PbTe source as a source of tellurium. Reproducible and uniform tellurium incorporation in amorphous GaN 1-x As x layers has been successfully achieved with a maximum Te concentration of 9×10²⁰ cm⁻³. Tellurium incorporation resulted in n-doping of GaN 1-x As x layers with Hall carrier concentrations up to 3×10¹⁹ cm⁻³ and mobilities of ~1 cm²/V s. The optimal growth temperature window for efficient Te doping of the amorphous GaN 1-x As x layers has been determined.

Novikov, S. V.↗