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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 577 records · Page 32
All sourcesNASA NTRSDOE OSTI
NASA NTRS1972

Joule-Thomson inversion curves and related coefficients for several simple fluids

The equations of state (PVT relations) for methane, oxygen, argon, carbon dioxide, carbon monoxide, neon, hydrogen, and helium were used to establish Joule-Thomson inversion curves for each fluid. The principle of corresponding states was applied to the inversion curves, and a generalized inversion curve for fluids with small acentric factors was developed. The quantum fluids (neon, hydrogen, and helium) were excluded from the generalization, but available data for the fluids xenon and krypton were included. The critical isenthalpic Joule-Thomson coefficient mu sub c was determined; and a simplified approximation mu sub c approximates T sub c divided by 6P sub c was found adequate, where T sub c and P sub c are the temperature and pressure at the thermodynamic critical point. The maximum inversion temperatures were obtained from the second virial coefficient (maximum (B/T)).

Hendricks, R. C.↗
NASA NTRS1977

Tables of branching ratios for electric dipole transitions between arbitrary levels of hydrogen-like atoms

The branching ratios in hydrogen-like atoms due to the electric-dipole transitions are tabulated for the initial principal and azimuthal quantum numbers n prime l prime, and final principal and azimuthal quantum numbers n l. Average values with respect to l prime are given. The branching ratios not tabulated, including the initial states n prime yields infinity l prime corresponding to the threshold of the continuum, could be obtained by extrapolation.

Omidvar, K.↗
NASA NTRS1989

Semiclassical approach to atomic and molecular interactions

A general approach, combining quantum and classical mechanics, is used to determine the electron position and velocity distributions in atoms and atomic ions (positive and negative). The Hartree-Fock electronic wave functions and the classical central field approximation are used for evaluation of the dynamic properties of the localized electrons. The distributions, which are of fundamental importance in applications of the binary encounter approximation to description of atomic and ionic collissions, are obtained in the form of simple analytical expressions. The quantum-classical distributions of this work are compared with several other distributions in Ne, Ar, and Al atoms in the ground state.

Kunc, Joseph A.↗
NASA NTRS1995

The Dissociative Recombination of OH(+)

Theoretical quantum chemical calculations of the cross sections and rates for the dissociative recombination of the upsilon = 0 level of the ground state of OH(+) show that recombination occurs primarily along the 2 (2)Pi diabatic route. The products are 0((1)D) and a hot H atom with 6.1 eV kinetic energy. The coupling to the resonances is very small and the indirect recombination mechanism plays only a minor role. The recommended value for the rate coefficient is (6.3 +/- 0.7) x 10(exp -9)x (T(e)/1300)(exp -0.48) cu.cm/s for 10 less than T(e) less than 1000 K.

Guberman, Steven L.↗
NASA NTRS2017

The Diffuse Interstellar Bands: Solving a Century Old Problem

The Diffuse Interstellar Bands (DIBs) are a set of apporoximately 500 absorption bands that are seen in the spectra of reddened stars (i.e., stars obscured by the presence of interstellar clouds in their line of sight). The first DIBs were detected in the visible over a century ago. Diffuse Interstellar Bands are now detected from the near ultraviolet to the near infrared in the spectra of reddened stars spanning a variety of interstellar environments in our local, and in other galaxies. Although DIB carriers are a significant part of the interstellar chemical inventory as they account for a noticeable fraction of the interstellar extinction, the nature of their carriers is still unknown over a century after the detection of the first bands. DIB carriers are stable and ubiquitous in a broad variety of interstellar environments and play a unique role in interstellar physics and chemistry. It has long been realized that the solving of the DIB problem requires a strong synergy between astronomical observations, laboratory astrophysics and astrochemistry, quantum chemistry calculations and astrophysical modeling of line-of-sights. In this review, we'll present and discuss the current state of this perplexing problem. We'll review the progress and the failures that have been encountered in the long quest for the identification of the carriers of these ubiquitous interstellar bands.

Molecules in Space↗
NASA NTRS2002

Time resolved studies of proton irradiated quantum dots

The effects of proton irradiation on carrier dynamics were measured by time-resolved photoluminescence on InGaAs/GaAs quantum dot structures with different dot density and substrate orientation, as well as on InAlAs/AlGaAs quantum dots.

nanotechnology↗
NASA NTRS1976

Photomultiplier tube development for the 1.06 micrometer wavelength

High speed, electrostatic photomultipliers were developed for use in 400 megabit laser communication systems operating at the 1.06 micron wavelength. A high performance, electrostatic III-V photocathode PMT was shown in communication system tests to perform competitively with solid state and avalanche photodiodes. Signal-induced noise and III-V cathode stability were identified as remaining technical problems while cathode quantum efficiencies of or = 5% at 1.06 micron and 320 picosecond rise and fall time pulse performance were achieved.

Enck, R. S., Jr.↗
NASA NTRS1988

Quantum-classical electron distributions in atoms and atomic ions

A quantum-classical approach is used to obtain the velocity distributions in atoms and positive and negative ions in both ground and excited states. In the analysis, Hartree-Fock electronic wavefunctions are used to determine the radial electron distributions, and the central-field approximation is used to study the the dynamic properties of the localized electrons. The distributions for the outer and inner shells are found to agree well with exact results obtained by numerical calculations.

Kunc, Joseph A.↗
NASA NTRS1994

Theoretical investigation of wave-vector-dependent analytical and numerical formulations of the interband impact-ionization transition rate for electrons in bulk silicon and GaAs

The electron interband impact-ionization rate for both silicon and gallium arsenide is calculated using an ensemble Monte Carlo simulation with the expressed purpose of comparing different formulations of the interband ionization transition rate. Specifically, three different treatments of the transition rate are examined: the traditional Keldysh formula, a new k-dependent analytical formulation first derived by W. Quade, E. Scholl, and M. Rudan (1993), and a more exact, numerical method of Y. Wang and K. F. Brennan (1994). Although the completely numerical formulation contains no adjustable parameters and as such provides a very reliable result, it is highly computationally intensive. Alternatively, the Keldysh formular, although inherently simple and computationally efficient, fails to include the k dependence as well as the details of the energy band structure. The k-dependent analytical formulation of Quade and co-workers overcomes the limitations of both of these models but at the expense of some new parameterization. It is found that the k-dependent analytical method of Quade and co-workers produces very similar results to those obtained with the completely numerical model for some quantities. Specifically, both models predict that the effective threshold for impact ionization in GaAs and silicon is quite soft, that the majority of ionization events originate from the second conduction band in both materials, and that the transition rate is k dependent. Therefore, it is concluded that the k-dependent analytical model can qualitatively reproduce results similar to those obtained with the numerical model yet with far greater computational efficiency. Nevertheless, there exist some important drawbacks to the k-dependent analytical model of Quade and co-workers: These are that it does not accurately reproduce the quantum yield data for bulk silicon, it requires determination of a new parameter, related physically to the overlap intergrals of the Bloch state which can only be adjusted by comparison to experiment, and fails to account for any wave-vector dependence of the overlap integrals. As such the transition rate may be overestimated at those points for which 'near vertical,' small change in k, transitions occur.

Kolnik, Jan↗
NASA NTRS1994

Theoretical Investigation of Wave-Vector-Dependent Analytical and Numerical Formulations of the Interband Impact-Ionization Transition Rate for Electron in Bulk Silicon and GaAs

The electron interband impact-ionization rate for both silicon and gallium arsenide is calculated using an ensemble Monte Carlo simulation with the expressed purpose of comparing different formulations of the interband ionization transition rate. Specifically, three different treatments of the transition rate are examined: the traditional Keldysh formula, a new k-dependent analytical formulation first derived by W. Quade, E Scholl, and M. Rudan, and a more exact, numerical method of Y. Wang and K. F. Brennan. Although the completely numerical formulation contains no adjustable parameters and as such provides a very reliable result, it is highly computationally intensive. Alternatively, the Keldysh formula, although inherently simple and computationally efficient, fails to include the k dependence as well as the details of the energy band structure. The k-dependent analytical formulation of Quade and co-workers overcomes the limitations of both of these models but at the expense of some new parameterization. It is found that the k-dependent analytical method of Quade and co-workers produces very similar results to those obtained with (he completely numerical model for some quantities. Specifically, both models predict that the effective threshold for impact ionization in GaAs and silicon is quite soft, that the majority of ionization events originate from the second conduction band in both materials, and that the transition rate is k dependent. Therefore, it is concluded that the k-dependent analytical model can qualitatively reproduce results similar to those obtained with the numerical model yet with far greater computational efficiency. Nevertheless, there exist some important drawbacks to the k-dependent analytical model of Quade and co-workers: These are that it does not accurately reproduce the quantum yield data for bulk silicon, it requires determination of a new parameter, related physically to (he overlap integrals of the Bloch state which can only be adjusted by comparison to experiment, and fails to account for any wave-vector dependence of the overlap integrals. As such [he transition rate may be overestimated at those points for which "near vertical," small change in k, transitions occur.

Kolnik, Jan↗
NASA NTRS2002

An Extremely Wide Bandwidth, Low-Noise SIS Heterodyne Receiver Design for Millimeter and Submillimeter Observations

Millimeter and submillimeter heterodyne receivers using state-of-the-art SIS detectors are capable of extremely large instantaneous bandwidths with noise temperatures within a few Kelvin of the quantum limit. We present the design for a broadband, sensitive, heterodyne spectrometer under development for the Caltech Submillimeter Observatory (CSO). The 180-300 GHz double-sideband design uses a single SIS device excited by a full bandwidth, fixed-tuned waveguide probe on a silicon substrate. The IF output frequency (limited by the MMIC low noise IF preamplifier) is 6-18 GHz, providing an instantaneous RF bandwidth of 24 GHz (double-sideband). The SIS mixer conversion loss should be no more than 1-2 dB with mixer noise temperatures across the band within 10 K of the quantum limit. The single-sideband receiver noise temperature goal is 70 K. The wide instantaneous bandwidth and low noise will result in an instrument capable of a variety of important astrophysical observations beyond the capabilities of current instruments. Lab testing of the receiver will begin in the summer of 2002, and the first use on the CSO should occur in the spring of 2003.

Sumner, Matthew↗
NASA NTRS2002

Diode-Laser Pumped Far-Infrared Local Oscillator Based on Semiconductor Quantum Wells

The contents include: 1) Tetrahertz Field: A Technology Gap; 2) Existing THZ Sources and Shortcomings; 3) Applications of A THZ Laser; 4) Previous Optical Pumped LW Generations; 5) Optically Pumped Sb based Intersubband Generation Whys; 6) InGaAs/InP/AlAsSb QWs; 7) Raman Enhanced Optical Gain; 8) Pump Intensity Dependence of THZ Gain; 9) Pump-Probe Interaction Induced Raman Shift; 10) THZ Laser Gain in InGaAs/InP/AlAsSb QWs; 11) Diode-Laser Pumped Difference Frequency Generation (InGaAs/InP/AlAsSb QWs); 12) 6.1 Angstrom Semiconductor Quantum Wells; 13) InAs/GaSb/AlSb Nanostructures; 14) InAs/AlSb Double QWs: DFG Scheme; 15) Sb-Based Triple QWs: Laser Scheme; and 16) Exciton State Pumped THZ Generation. This paper is presented in viewgraph form.

Kolokolov, K.↗
NASA NTRS2004

A Wide-Bandwidth, Low-Noise SIS Receiver Design for Millimeter and Submillimeter Wavelengths

In principle, millimeter and submillimeter heterodyne receivers using state-of-the-art SIS detectors are capable of extremely large instantaneous bandwidths with noise temperatures within a few Kelvin of the quantum limit. We are applying modem design tools, such as 3D electromagnetic simulators and Caltech's SuperMix SIS analysis package, to develop a new generation of waveguide SIS mixers with very broad RF and IF bandwidths. Our initial design consists of a double-sideband mixer targeted for the 180- 300 GHz band that uses a single SIS junction excited by a full bandwidth, fixed-tuned waveguide probe on a silicon substrate. The IF output band, limited by the MMIC low-noise IF preamplifier, is 6-18 GHz, providing an instantaneous RF bandwidth of 24 GHz (double-sideband). The SIS mixer conversion loss is predicted to be no more than 1-2 dB (single-sideband) with mixer noise temperatures across the band within 10 Kelvin of the quantum limit. The single-sideband receiver noise temperature goal is 70 Kelvin. The wide instantaneous bandwidth and low noise will result in an instrument capable of a variety of important astrophysical observations beyond the capabilities of current instruments. Lab testing of the receiver will begin in the summer of 2002, and a demonstration on the CSO should occur in the spring of 2003.

Sumner, Matthew↗
NASA NTRS1994

Very Long-Wavelength GaAs/AlxGa1-xAs Infrared Hot Electron Transistor

We have demonstrated a bound to continuum state GaAs/AlxGa1-xAs infrared hot electron transistor which has a peak response at (sub =16.3). This device utilizes a bound-to-continuum quantum well infrared photodetector as a photosensitive emitter and a wide AlxGa1-xAs barrier between the base and the collector as an energy discriminating filter.

infrared hot electron transistor photosensitive em↗
NASA NTRS1993

(abstract) Electron Excitation of the H 2 (...) Continuum in the Vacuum Ultraviolet

Planetary exploration has pointed out the need for accurate electron impact excitation cross sections for H 2 . The quantum yield in the threshold energy region between vacuum ultraviolet (VUV) emission production by the band systems of the singlet and triplet states and dissociative production of fast H(1s) atoms by the triplet states is essential for energy budget modeling in planetary atmospheres and astronomy.

electron↗