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At least 577 records · Page 32
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Interfacial oxygen migration and its effect on the magnetic anisotropy in Pt/Co/MgO/Pt films

This paper reports the interfacial oxygen migration effect and its induced magnetic anisotropy evolution in Pt/Co/MgO/Pt films. During depositing the MgO layer, oxygen atoms from the MgO combine with the neighboring Co atoms, leading to the formation of CoO at the Co/MgO interface. Meanwhile, the films show in-plane magnetic anisotropy (IMA). After annealing, most of the oxygen atoms in CoO migrate back to the MgO layer, resulting in obvious improvement of Co/MgO interface and the enhancement of effective Co-O orbital hybridization. These favor the evolution of magnetic anisotropy from IMA to perpendicular magnetic anisotropy (PMA). The oxygen migration effect is achieved by the redox reaction at the Co/MgO interface. On the contrary, the transfer from IMA to PMA cannot be observed in Pt/Co/Pt films due to the lack of interfacial oxygen migration.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Effect of MgO/Co interface and Co/MgO interface on the spin dependent transport in perpendicular Co/Pt multilayers

Effect of the metal/oxide interface on spin-dependent transport properties in perpendicular [Co/Pt]{sub 3} multilayers was investigated. The saturation Hall resistivity (ρ{sub xy}) is significantly increased by 45% with 1.4 nm thick CoO layer inserted at the top Co/MgO interface; whereas it is increased only 25% with 1 nm thick CoO layer at the bottom MgO/Co interface. The interfacial structures characterized by X-ray photoelectron spectroscopy show that the MgO/Co interface and Co/MgO interface including chemical states play a dominant role on spin-dependent transport, leading to different anomalous Hall behavior.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

High field-effect mobility at the (Sr,Ba)SnO{sub 3}/BaSnO{sub 3} interface

A perovskite oxide, BaSnO{sub 3}, has been classified as one of transparent conducting materials with high electron mobility, and its application for field-effect transistors has been the focus of recent research. Here we report transistor operation in BaSnO{sub 3}-based heterostructures with atomically smooth surfaces, fabricated on SrTiO{sub 3} substrates by the (Sr,Ba)SnO{sub 3} buffer technique. Indeed, modulation of band profiles at the channel interfaces with the insertion of wide bandgap (Sr,Ba)SnO{sub 3} as a barrier layer results in a significant improvement of field-effect mobility, implying effective carrier doping at the regulated heterointerface. These results provide an important step towards realization of high-performance BaSnO{sub 3}-based field-effect transistors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Comprehensive study of Al-induced layer-exchange growth for orientation-controlled Si crystals on SiO{sub 2} substrates

Orientation-controlled crystalline Si films on insulating substrates are strongly required to achieve high-performance thin-film devices for next-generation electronics. We have comprehensively investigated the layer-exchange kinetics of Al-induced crystallization (AIC) in stacked structures, i.e., amorphous-Si/Al-oxide/Al/SiO{sub 2}-substrates, as a function of the air-exposure time of Al surfaces (t{sub air}: 0–24 h) to form Al-oxide interface-layers, the thickness of Al and Si layers (d{sub Al,} d{sub Si}: 50–200 nm), the annealing temperature (450–500 °C), and the annealing time (0–50 h). It has been clarified that longer t{sub air} (>60 min) and/or thinner d{sub Al} and d{sub Si} (<50 nm) lead to the (111) oriented growth; in contrast, shorter t{sub air} (<60 min) and/or thicker d{sub Al} and d{sub Si} (>100 nm) lead to the (100) oriented growth. No correlation between the annealing temperature and the crystal orientation is observed. Detailed analysis reveals that the layer-exchange kinetics are dominated by “supply-limited” processing, i.e., diffusion of Si atoms into Al layers through Al-oxide layer. Based on the growth rate dependent Si concentration profiles in Al layers, and the free-energy of Si at Al-oxide/Al or Al/SiO{sub 2} interfaces, a comprehensive model for layer-exchange growth is proposed. This well explains the experimental results of not only Si-AIC but also another material system such as gold-induced crystallization of Ge. In this way, a growth technique achieving the orientation-controlled Si crystals on insulating substrates is established from both technological and scientific points of view.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Evidence of an oxidation induced phase transformation for a delta phase plutonium-gallium alloy

The oxidation of an ~1.5 at% Ga plutonium metal alloy in dry air as a function of time was studied using a combination of FIB-SEM, AES, and XRD. Analysis of SEM images of FIB cross-sections of the oxide allowed for direct measurement of the oxide thickness as well as determination of heterogeneity in the extent of the oxide. AES analysis performed on cross-sections of the oxide allowed for quantitative analysis of the atomic composition and semi-quantitative analysis of the chemical composition. Initial preparation of the sample was found to induce a martensitic transformation to α' - Pu with an average thickness of 233 nm. Electropolishing was found to be sufficient to fully remove the α' layer with creation of only a minimum oxide layer. Growth of the oxide in dry air was found to initially follow parabolic kinetics, with a parabolic rate constant orders of magnitude higher than expected for δ-Pu but in-line with values extrapolated to room temperature for α-Pu. Following complete oxidation of the initial α` layer, further regions of plutonium metal depleted in gallium were observed to form at the oxide / metal interface. However, gallium, as Ga 2 O 3 , was found to be enriched at the surface and present in the oxide in an amount comparable to the relative Ga:Pu ratio of the bulk metal alloy. Finally, the results presented here serve to bridge a diverse array of previous experimental and theoretical data and provide the first comprehensive view of the fate of the δ-stabilizer during formation of an oxide.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Interfaces between hexagonal and cubic oxides and their structure alternatives

Multi-layer structure of functional materials often involves the integration of different crystalline phases. The film growth orientation thus frequently exhibits a transformation, owing to multiple possibilities caused by incompatible in-plane structural symmetry. Nevertheless, the detailed mechanism of the transformation has not yet been fully explored. Here we thoroughly probe the heteroepitaxially grown hexagonal zinc oxide (ZnO) films on cubic (001)-magnesium oxide (MgO) substrates using advanced scanning transition electron microscopy, X-ray diffraction and first principles calculations, revealing two distinct interface models of (001) ZnO/(001) MgO and (100) ZnO/(001) MgO. Here we have found that the structure alternatives are controlled thermodynamically by the nucleation, while kinetically by the enhanced Zn adsorption and O diffusion upon the phase transformation. Finally, this work not only provides a guideline for the interface fabrication with distinct crystalline phases but also shows how polar and non-polar hexagonal ZnO films might be manipulated on the same cubic substrate.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Correlated memory resistor in epitaxial NdNiO{sub 3} heterostructures with asymmetrical proton concentration

The electronic devices using correlated transition metal oxides are the promising candidates to overcome the limitation of the current electronics due to the rich electronic phases and the extreme sensitivities. Here, we report proton-based resistive switching memory that uses correlated oxides, i.e., epitaxial NdNiO{sub 3} heterostructure with asymmetrical concentration of protons (H{sup +}) to obtain multilevel states. By designing such metal-NdNiO{sub 3}-metal device structures with asymmetrical proton concentration, we demonstrate that the correlated oxides exhibit resistive switching by ionic transport of protons at the metal-hydrogenated NdNiO{sub 3} (H-NNO) interface. This finding will guide the development of energy-efficient switching devices for non-volatile memory and neuromorphic applications.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1987

High-temperature oxidation/corrosion of iron-based superalloys

The oxidation and sulfidation of several novel iron-base superalloys were evaluated in high-temperature cyclic tests. The experimental austenitic alloys examined were modifications of NASAUT-4GA which were developed for Stirling-engine application. The weight gains and resulting surface scales were measured and analyzed. Mixed oxide scales were found to form on all specimens exposed above 871 C. The build-up of these scales led to a depletion of Mn and Cr in a zone adjacent to the oxides. In addition, the initial oxidation of the Fe-rich alloy was inhibited by a thin but tenacious Si layer which formed at the interface between oxides and the parent layer. Sulfidation tests using Na2SO4 coatings resulted in the formation of a protective spinel and alpha-Fe2O3 phases. Preferential attack of the carbide phase by hydrogen was not observed after 350 h at 871 C.

Lemkey, F. D.↗
DOE OSTI2015

p-Type Transparent Conducting Oxide/n-Type Semiconductor Heterojunctions for Efficient and Stable Solar Water Oxidation

Achieving stable operation of photoanodes used as components of solar water splitting devices is essential to realizing the promise of this renewable energy technology. It is demonstrated that p-type transparent conducting oxides (p-TCOs) can function both as a selective hole contact and corrosion protection layer for photoanodes used in light-driven water oxidation. Using NiCo 2 O 4 as the p-TCO and n-type Si as a prototypical light absorber, a rectifying heterojunction capable of light driven water oxidation was created. By placing the charge separating junction in the Si using a np + structure and by incorporating a highly active heterogeneous Ni-Fe oxygen evolution catalyst, efficient light-driven water oxidation can be achieved. In this structure, oxygen evolution under AM 1.5 G illumination occurs at 0.95 V vs RHE, and the current density at the reversible potential for water oxidation (1.23 V vs RHE) is >25 mA cm -2 . Stable operation was confirmed by observing a constant current density over 72 h and by sensitive measurements of corrosion products in the electrolyte. In situ Raman spectroscopy was employed to investigate structural transformation of NiCo 2 O 4 during electrochemical oxidation. The interface among the light absorber and p-TCO is crucial to produce selective hole conduction to the surface under illumination. For example, annealing to produce more crystalline NiCo 2 O 4 produces only small changes in its hole conductivity, while a thicker SiO x layer is formed at the n-Si/p-NiCo 2 O 4 interface, greatly reducing the PEC performance. The generality of the p-TCO protection approach is demonstrated by multihour, stable, water oxidation with n-InP/p-NiCo 2 O 4 heterojunction photoanodes.

Chen, Le↗
DOE OSTI2019

Investigation on the Surface Vortex Formation During Mechanical Stirring with an Axial-Flow Impeller Used in an Aluminum Process

The present study investigated the mechanism of surface vortex formation in an aluminum melt vessel stirred by an axial-flow impeller mechanically. The oxide film is formed at the aluminum melt/air interface, and the movement of the interface entrains the oxide film and inclusions. Hence, the transient movement of melt–air interface is significant. The present study conducted a water model experiment and numerical simulation focusing on the movement of gas–liquid interface. The present study found that the oxide film can be entrained by two phenomena: (1) local surface vortex and (2) sloshing near the vessel wall. The local surface vortex is formed due to the pressure distribution around the impeller, and the sloshing is caused by macroinstabilities, which is generated by the discharged flow of axial-flow impeller. Besides, the shape of gas–liquid interface is dependent on the impeller shape. The axial-flow impeller gives rise to steeply curved shape of gas–liquid interface near the impeller shaft.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Characterization of Shallow, Undoped Ge/SiGe Quantum Wells Commercially Grown on 8-in. (100) Si Wafers

Hole spins in Ge quantum wells have shown success in both spintronic and quantum applications, thereby increasing the demand for high-quality material. We performed material analysis and device characterization of commercially grown shallow and undoped Ge/SiGe quantum well heterostructures on 8-in. (100) Si wafers. Material analysis reveals the high crystalline quality, sharp interfaces, and uniformity of the material. We demonstrate a high mobility (1.7 × 10 5 cm 2 V –1 s –1 ) 2D hole gas in a device with a conduction threshold density of 9.2 × 10 10 cm –2 . We study the use of surface preparation as a tool to control barrier thickness, density, mobility, and interface trap density. We report interface trap densities of 6 × 10 12 eV –1 . Our results validate the material’s high quality and show that further investigation into improving device performance is needed. We conclude that surface preparations which include weak Ge etchants, such as dilute H 2 O 2 , can be used for postgrowth control of quantum well depth in Ge-rich SiGe while still providing a relatively smooth oxide–semiconductor interface. Our results show that interface state density is mostly independent of our surface preparations, thereby implying that a Si cap layer is not necessary for device performance. Transport in our devices is instead limited by the quantum well depth. Commercially sourced Ge/SiGe, such as studied here, will provide accessibility for future investigations.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Photoemission spectroscopy study of the lanthanum lutetium oxide/silicon interface

Rare earth oxides are promising candidates for future integration into nano-electronics. A key property of these oxides is their ability to form silicates in order to replace the interfacial layer in Si-based complementary metal-oxide field effect transistors. In this work a detailed study of lanthanum lutetium oxide based gate stacks is presented. Special attention is given to the silicate formation at temperatures typical for CMOS processing. The experimental analysis is based on hard x-ray photoemission spectroscopy complemented by standard laboratory experiments as Rutherford backscattering spectrometry and high-resolution transmission electron microscopy. Homogenously distributed La silicate and Lu silicate at the Si interface are proven to form already during gate oxide deposition. During the thermal treatment Si atoms diffuse through the oxide layer towards the TiN metal gate. This mechanism is identified to be promoted via Lu-O bonds, whereby the diffusion of La was found to be less important.

36 MATERIALS SCIENCE↗
DOE OSTI2016

2015 Progress Report/July 2016: Iron Oxide Redox Transformation Pathways: The Bulk Electrical Conduction Mechanism

Despite decades of research on the reactivity and stable isotope properties of Fe oxides, the ability to describe the redox behavior of Fe oxides in the environment is still quite limited. This is due, in large part, to the analytical and spatial complexities associated with studying microscopic processes at the Fe oxide-water interface. This project had the long-term vision of filling this gap by developing a detailed understanding of the relationship between interfacial ET processes, surface structure and charge, and mineral semiconducting properties. We focused on the Fe(III)-oxides and oxyhydroxides because of their geochemical preponderance, versatility in synthesis of compositionally, structurally, and morphologically tailored phases, and because they are amenable to a wide range of surface and bulk properties characterization. In particular, reductive transformation of phases such as hematite (α-Fe 2 O 3 ) and goethite (α-FeOOH) in aqueous solution can serve as excellent model systems for studies of electron conduction processes, as well as provide valuable insights into effect of nanoscale conductive materials on contaminant fate at DOE sites. More specifically, the goal of the Iowa component of this project was to use stable Fe isotope measurements to simultaneously measure isotope specific oxidation states and concentrations of Fe at the hematite-water and goethite-water interface. This work builds on our previous work where we used an innovative combination of 57 Fe Mössbauer spectroscopy and high precision isotope ratio measurements (MC-ICP-MS) to probe the dynamics of the reaction of aqueous Fe(II) with goethite. Mössbauer spectroscopy detects 57 Fe only among all other Fe isotopes and we have capitalized on this to spectroscopically demonstrate Fe(II)-Fe(III) electron transfer between sorbed Fe(II) and Fe(III) oxides (Handler, et al., 2009; Gorski, et al. 2010; Rosso et al., 2010). By combining the Mössbauer spectroscopy and stable isotopes measurements, we have been able to simultaneously track the oxidation state and isotope concentration of the bulk Fe oxide and aqueous Fe. One of our most compelling findings is that despite the apparent stability of the Fe(II)-goethite system, there is actually a tremendous amount of Fe atom cycling occurring between the aqueous phase and the bulk goethite as indicated by the isotopic composition of both phases approaching the mass balance average (Handler et al., 2009). How such extensive re-crystallization and Fe atom exchange can occur with no significant morphological change is a fascinating question. Based on previous work from PI Rosso’s group showing that a potential gradient across hematite crystal faces leads to conduction through hematite and growth and dissolution at separate crystal faces we proposed that a redox-driven recrystallization could be occurring that would explain the extensive mixing observed with the isotope data. From our previous studies utilizing Mössbauer spectroscopy, we know that sorption of Fe(II) onto goethite results in electron transfer between the sorbed Fe(II) and the structural Fe(III) in goethite. Oxidation of the sorbed Fe(II) produces growth of goethite on goethite (i.e., homoepitaxy), as well as injection of an electron into goethite. It is possible that electron transfer from sorbed Fe(II) occurs across a potential gradient, and that Fe(II) atoms are dissolved at a different location on the goethite surface. These newly-reduced Fe(II) atoms could then dissolve into the aqueous phase, exposing fresh Fe(III) goethite to the aqueous phase. Through a repeated series of these five steps of sorption–electron transfer–crystal growth–conduction– dissolution, a redox-driven conveyor belt, could be established that would allow all of the goethite to be eventually exposed to the aqueous phase and exchanged. This surface-mediated recrystallization process would result in similar Fe isotope distributions in the aqueous phase and goethite particle, as we have observed here. It would also result in a stable aqueous Fe(II) concentration, if there were equal rates of goethite growth and dissolution.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Nuclear–electronic orbital approach to quantization of protons in periodic electronic structure calculations

The nuclear–electronic orbital (NEO) method is a well-established approach for treating nuclei quantum mechanically in molecular systems beyond the usual Born–Oppenheimer approximation. In this work, we present a strategy to implement the NEO method for periodic electronic structure calculations, particularly focused on multicomponent density functional theory (DFT). The NEO-DFT method is implemented in an all-electron electronic structure code, FHI-aims, using a combination of analytical and numerical integration techniques as well as a resolution of the identity scheme to enhance computational efficiency. After validating this implementation, proof-of-concept applications are presented to illustrate the effects of quantized protons on the physical properties of extended systems, such as two-dimensional materials and liquid–semiconductor interfaces. Specifically, periodic NEO-DFT calculations are performed for a trans-polyacetylene chain, a hydrogen boride sheet, and a titanium oxide–water interface. The zero-point energy effects of the protons as well as electron–proton correlation are shown to noticeably impact the density of states and band structures for these systems. These developments provide a foundation for the application of multicomponent DFT to a wide range of other extended condensed matter systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Oxygen vacancies at the surface of SrTiO{sub 3} thin films

The two-dimensional electron gas (2DEG) observed at the surface of oxide thin films and at the interface between two oxides has been widely discussed, but the mechanism responsible for this behavior is still not well understood. In this work, we study the properties of the SrTiO{sub 3} (001) surface and show that defects are necessary in order to explain this 2DEG. We study the properties of oxygen vacancies at the TiO{sub 2} and SrO terminated surface, and conclude they can explain the metallic behavior experimentally observed. There is a strong tendency for these vacancies to be localized at the surface, where the formation energy is less than 2.92 eV.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Tuning Two Interfaces with Fluoroethylene Carbonate Electrolytes for High-Performance Li/LCO Batteries

Various electrolytes have been reported to enhance the reversibility of Li metal electrodes. However, for these electrolytes, concurrent and balanced control of Li metal and positive electrode interfaces is a critical step toward fabrication of high performance Li metal batteries. Here, we report the tuning of Li metal and lithium cobalt oxide (LCO) interfaces with fluoroethylene carbonate (FEC)-containing electrolytes to achieve high cycling stability of Li/LCO batteries. Reversibility of Li metal electrode is considerably enhanced for electrolytes with high FEC contents, confirming the positive effect of FEC on the stabilization of Li metal. electrode. However, for FEC content of 50 wt% and above, the discharge capacity is significantly reduced due to the formation of a passivation layer on the LCO cathodes. Using balanced tuning of the two interfaces, stable cycling over 350 cycle at 1.5 mA cm-2 is achieved for an Li/LCO cell with 1M PF6 FEC/DMC=30/70 electrolyte. The enhanced reversibility of the Li metal electrode is associated with the formation of LiF and polycarbonate in the FEC-derived solid electrolyte interface (SEI) layer. In addition, electrolytes with high FEC content lead to lateral Li deposition on the sides of Li deposits and larger dimensions of rod-like Li deposits, suggesting the elastic and ion conductive nature of the FEC-derived SEI layer.

Lee, Jinhong↗
DOE OSTI2018

Coherent growth of oxide films on a cleaved layered metal oxide substrate

Understanding oxide interface-induced effects requires controlled epitaxial growth of films on well-defined substrate surfaces. While conventional film growth on ex situ prepared substrates has proven to be a successful route, the choices of appropriate substrates with atomically defined surfaces are limited. Here, by depositing La 2/3 Sr 1/3 Mn O 3 on Sr 2 Ru O 4 (001), we present an alternative method of growing oxide thin films on in situ cleaved surfaces of layered-structured substrates. Cleaving Sr 2 Ru O 4 at low temperature in ultrahigh vacuum exposes an atomically flat, solely SrO-terminated surface with up to micrometer-scale terraces. The deposition of La 2/3 Sr 1/3 Mn O 3 spontaneously diminishes the surface Ru O 6 in-plane rotational distortion of the substrate and results in a cubic-like perovskite film structure with (La/Sr)-O layer termination. The interface is atomically sharp without obvious deviation of lattice spacing and chemical valence, except in the first unit cell where Ru-Mn intermixing is observed. Finally, these results demonstrate that film growth on a cleaved substrate can be an alternative route to obtain well-defined interfaces and in addition increase the availability of substrates for future oxide films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Influence of hydride precipitation on the corrosion kinetics of Zircaloy-4: effect of the nano-structure and grain boundary properties of the zirconium oxide layer on oxygen diffusion flux - 2016-0073

Hydride precipitation at the oxide-metal interface is frequently proposed as causing the corrosion acceleration of Zircaloy-4 at high burnup in pressurized water reactors (PWRs). In order to identify the local mechanisms possibly involved, we studied the nano-structure of oxides formed on massive zirconium hydrides and reference Zircaloy-4 with an innovative grain mapping technique with the use of transmission electron microscopy (TEM). In autoclave PWR-conditions, the presence of a precipitated hydride phase, previously formed by a cathodic charging technique at the surface of Zircaloy-4, clearly increased the corrosion rate, and a higher oxygen diffusion flux along oxide grain boundaries is observed compared with the reference Zircaloy-4. The texture, grain size, and adjacent grain misorientation in the oxide layer were studied in detail along the direction of the oxide growth using an automated crystal orientation mapping technique associated with TEM for both pre-hydrided and reference Zircaloy-4 samples. The texture in the growth direction is similar on pre-hydrided and reference samples, but the grain-to-grain mis-orientations showed differences. Indeed, on the pre-hydrided sample, the misorientation of 90 deg. C with respect to the [001] monoclinic axis is less probable than in the reference oxide, and more mis-orientations of 50-70 deg. C and 120-150 deg. C, corresponding to larger mismatches between neighboring grain boundaries, are observed. A smaller average diameter of the columnar monoclinic grains is also clearly revealed for the oxide grown on the pre-hydrided sample that leads to a larger number of diffusion paths for oxidizing species. These results are discussed and used for simulating oxygen diffusion flux through the polycrystalline microstructure of the oxide layer as a function of the grain size. (authors)

36 MATERIALS SCIENCE↗