Screened circuit fabrication equipment.
Stencil screening methods for printing integrated circuit patterns for resistors, capacitors, etc, discussing automation possibilities
INTEGRATED CIRCUIT↗
SEARCH · Engineering Papers
Results for “integrated circuits”
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The MSFC complementary metal oxide semiconductor (including multilevel interconnect metallization) process handbook
The fabrication techniques for creation of complementary metal oxide semiconductor integrated circuits at George C. Marshall Space Flight Center are described. Examples of C-MOS integrated circuits manufactured at MSFC are presented with functional descriptions of each. Typical electrical characteristics of both p-channel metal oxide semiconductor and n-channel metal oxide semiconductor discrete devices under given conditions are provided. Procedures design, mask making, packaging, and testing are included.
Bouldin, D. L.↗
PC based graphic display real-time particle beam uniformity
A technique has been developed to support the study of the effects of cosmic rays on integrated circuits. The system is designed to determine the particle distribution across the surface of an integrated circuit accurately while the circuit is bombarded by a particle beam. The system uses photomultiplier tubes, an octal discriminator, a computer-controlled NIM quad counter, and an IBM PC. It provides real-time operator feedback for fast beam tuning and monitors momentary fluctuations in the particle beam. The hardware, software, and system performance are described.
Huebner, M. A.↗
Oblique Eccentric Gaze Holding Evokes Larger Horizontal than Vertical Rebound Nystagmus
Rebound nystagmus (RN) has been used to probe the adaptation mechanisms of the gaze holding system. This type of nystagmus is invoked upon returning to central gaze after prolonged fixation at an eccentric point and it is thought to reflect a set-point adaptation of the neural integrator circuit. Previous studies have only observed horizontal RN after horizontal eccentric gaze holding, reflecting adaptation of the horizontal neural integrator. The current study seeks to elucidate how eccentric gaze at oblique target locations, where there are equal horizontal and vertical components, affects the characteristics of the resulting RN. For a given trial, subjects were instructed to fixate a central flashing target for 5 seconds, then fixate an eccentric continuous target for 30 seconds at one of six possible locations (4 oblique and 2 horizontal targets), and finally fixate centrally at a flashing target for 15 seconds where RN is assessed. Binocular eye-tracking data were collected at 250 Hz. Slow-phase velocity (SPV) or the slow drift part of the nystagmus was used to quantify the magnitude of RN. Subjects showed elevated SPV in the horizontal component (2.3 deg/s), but less in the vertical component (1.4 deg/s) after oblique eccentric gaze holding, reflecting an oblique RN. The smaller vertical RN may reflect a different behavior of the horizontal and vertical neural integrators which are anatomically separated. Under the current paradigm, oblique gaze holding would appear to have a smaller effect on adaptation of the vertical integrator than in the horizontal integrator. Further investigation is needed to establish the reference frame of this distinction between the horizontal and vertical integrator circuits.
gaze holding↗
Tunable quantum emitters on large-scale foundry silicon photonics
Abstract Controlling large-scale many-body quantum systems at the level of single photons and single atomic systems is a central goal in quantum information science and technology. Intensive research and development has propelled foundry-based silicon-on-insulator photonic integrated circuits to a leading platform for large-scale optical control with individual mode programmability. However, integrating atomic quantum systems with single-emitter tunability remains an open challenge. Here, we overcome this barrier through the hybrid integration of multiple InAs/InP microchiplets containing high-brightness infrared semiconductor quantum dot single photon emitters into advanced silicon-on-insulator photonic integrated circuits fabricated in a 300 mm foundry process. With this platform, we achieve single-photon emission via resonance fluorescence and scalable emission wavelength tunability. The combined control of photonic and quantum systems opens the door to programmable quantum information processors manufactured in leading semiconductor foundries.
Larocque, Hugo (ORCID:000900095849780X)↗
Optoelectronic Infrastructure for Radio Frequency and Optical Phased Arrays
Optoelectronic integrated circuits offer radiation-hardened solutions for satellite systems in addition to improved size, weight, power, and bandwidth characteristics. ODIS, Inc., has developed optoelectronic integrated circuit technology for sensing and data transfer in phased arrays. The technology applies integrated components (lasers, amplifiers, modulators, detectors, and optical waveguide switches) to a radio frequency (RF) array with true time delay for beamsteering. Optical beamsteering is achieved by controlling the current in a two-dimensional (2D) array. In this project, ODIS integrated key components to produce common RF-optical aperture operation.
Cai, Jianhong↗
A complementary MOS process
The complete sequence used to manufacture complementary metal oxide semiconductor (CMOS) integrated circuits is described. The fixed-gate array concept is presented as a means of obtaining CMOS integrated circuits in a fast and reliable fashion. Examples of CMOS circuits fabricated by both the conventional method and the fixed-gate array method are included. The electrical parameter specifications and characteristics are given along with typical values used to produce CMOS circuits. Temperature-bias stressing data illustrating the thermal stability of devices manufactured by this process are presented. Results of a preliminary study on the radiation sensitivity of circuits manufactured by this process are discussed. Some process modifications are given which have improved the radiation hardness of our CMOS devices. A formula description of the chemicals and gases along with the gas flow rates is also included.
Jhabvala, M. D.↗
Total-dose radiation effects data for semiconductor devices. 1985 supplement. Volume 2, part A
Steady-state, total-dose radiation test data, are provided in graphic format for use by electronic designers and other personnel using semiconductor devices in a radiation environment. The data were generated by JPL for various NASA space programs. This volume provides data on integrated circuits. The data are presented in graphic, tabular, and/or narrative format, depending on the complexity of the integrated circuit. Most tests were done using the JPL or Boeing electron accelerator (Dynamitron) which provides a steady-state 2.5 MeV electron beam. However, some radiation exposures were made with a Cobalt-60 gamma ray source, the results of which should be regarded as only an approximate measure of the radiation damage that would be incurred by an equivalent electron dose.
Martin, K. E.↗
Total-dose radiation effects data for semiconductor devices. 1985 Supplement. Volume 2, part B
Steady-state, total-dose radiation test data are provided in graphic format, for use by electronic designers and other personnel using semiconductor devices in a radiation environment. The data were generated by JPL for various NASA space programs. The document is in two volumes: Volume 1 provides data on diodes, bipolar transistors, field effect transistors, and miscellaneous semiconductor types, and Volume 2 (Parts A and B) provides data on integrated circuits. The data are presented in graphic, tabular, and/or narrative format, depending on the complexity of the integrated circuit. Most tests were done steady-state 2.5-MeV electron beam. However, some radiation exposures were made with a Cobalt-60 gamma ray source, the results of which should be regarded as only an approximate measure of the radiation damage that would be incurred by an equivalent electron dose. All data were generated in support of NASA space programs by the JPL Radiation Effects and Testing Group (514).
Martin, K. E.↗
Rotary blood pump
A rotary blood pump is presented. The pump includes a pump housing for receiving a flow straightener, a rotor mounted on rotor bearings and having an inducer portion and an impeller portion, and a diffuser. The entrance angle, outlet angle, axial, and radial clearances of the blades associated with the flow straightener, inducer portion, impeller portion, and diffuser are optimized to minimize hemolysis while maintaining pump efficiency. The rotor bearing includes a bearing chamber that is filled with crosslinked blood or other bio-compatible material. A back emf integrated circuit regulates rotor operation and a microcomputer may be used to control one or more back emf integrated circuits. A plurality of magnets are disposed in each of a plurality of impeller blades with a small air gap. A stator may be axially adjusted on the pump housing to absorb bearing load and maximize pump efficiency.
Bozeman, Richard J.↗
Rotary Blood Pump
A rotary blood pump includes a pump housing for receiving a flow straightener, a rotor mounted on rotor bearings and having an inducer portion and an impeller portion, and a diffuser. The entrance angle, outlet angle, axial and radial clearances of blades associated with the flow straightener, inducer portion, impeller portion and diffuser are optimized to minimize hemolysis while maintaining pump efficiency. The rotor bearing includes a bearing chamber that is filled with cross-linked blood or other bio-compatible material. A back emf integrated circuit regulates rotor operation and a microcomputer may be used to control one or more back emf integrated circuits. A plurality of magnets are disposed in each of a plurality of impeller blades with a small air gap. A stator may be axially adjusted on the pump housing to absorb bearing load and maximize pump efficiency.
Bozeman, Richard J., Jr.↗
Axial Pump
A rotary blood pump includes a pump housing for receiving a flow straightener, a rotor mounted on rotor bearings and having an inducer portion and an impeller portion, and a diffuser. The entrance angle, outlet angle, axial and radial clearances of blades associated with the flow straightener, inducer portion, impeller portion and diffuser are optimized to minimize hemolysis while maintaining pump efficiency. The rotor bearing includes a bearing chamber that is filled with cross-linked blood or other bio-compatible material. A back emf integrated circuit regulates rotor operation and a microcomputer may be used to control one or more back emf integrated circuits. A plurality of magnets are disposed in each of a plurality of impeller blades with a small air gap. A stator may be axially adjusted on the pump housing to absorb bearing load and maximize pump efficiency.
Bozeman, Richard J., Jr.↗
A miniaturized neuroprosthesis suitable for implantation into the brain
This paper presents current research on a miniaturized neuroprosthesis suitable for implantation into the brain. The prosthesis is a heterogeneous integration of a 100-element microelectromechanical system (MEMS) electrode array, front-end complementary metal-oxide-semiconductor (CMOS) integrated circuit for neural signal preamplification, filtering, multiplexing and analog-to-digital conversion, and a second CMOS integrated circuit for wireless transmission of neural data and conditioning of wireless power. The prosthesis is intended for applications where neural signals are processed and decoded to permit the control of artificial or paralyzed limbs. This research, if successful, will allow implantation of the electronics into the brain, or subcutaneously on the skull, and eliminate all external signal and power wiring. The neuroprosthetic system design has strict size and power constraints with each of the front-end preamplifier channels fitting within the 400 x 400-microm pitch of the 100-element MEMS electrode array and power dissipation resulting in less than a 1 degree C temperature rise for the surrounding brain tissue. We describe the measured performance of initial micropower low-noise CMOS preamplifiers for the neuroprosthetic.
Action Potentials/physiology↗
Performance of an SOI Boot-Strapped Full-Bridge MOSFET Driver, Type CHT-FBDR, under Extreme Temperatures
Electronic systems designed for use in deep space and planetary exploration missions are expected to encounter extreme temperatures and wide thermal swings. Silicon-based devices are limited in their wide-temperature capability and usually require extra measures, such as cooling or heating mechanisms, to provide adequate ambient temperature for proper operation. Silicon-On-Insulator (SOI) technology, on the other hand, lately has been gaining wide spread use in applications where high temperatures are encountered. Due to their inherent design, SOI-based integrated circuit chips are able to operate at temperatures higher than those of the silicon devices by virtue of reducing leakage currents, eliminating parasitic junctions, and limiting internal heating. In addition, SOI devices provide faster switching, consume less power, and offer improved radiation-tolerance. Very little data, however, exist on the performance of such devices and circuits under cryogenic temperatures. In this work, the performance of an SOI bootstrapped, full-bridge driver integrated circuit was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to establish a baseline on the functionality and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.
Patterson, Richard↗
Tests and inspection for process control of monolithic circuits
Tests and inspection procedures for process control of integrated circuits
QUALITY CONTROL↗
Multiple-Bit Errors Caused By Single Ions
Report describes experimental and computer-simulation study of multiple-bit errors caused by impingement of single energetic ions on 256-Kb dynamic random-access memory (DRAM) integrated circuit. Studies illustrate effects of different mechanisms for transport of charge from ion tracks to various elements of integrated circuits. Shows multiple-bit errors occur in two different types of clusters about ion tracks causing them.
Zoutendyk, John A.↗
Feed Structure For Antennas
A novel feed structure, for an antenna having a resonant electric field structure, comprising a patch element, an integrated circuit attached to the patch element, at least one inner conductor electrically connected to and terminating at the integrated circuit on a first end of the at least one inner conductor, wherein the at least one inner conductor extends through and is not electrically connected to the patch element, and wherein the at least one inner conductor is available for electrical connectivity on a second end of the at least one inner conductor, and an outer conductor electrically connected to and terminating at the patch element on a first end of the outer conductor, wherein the outer conductor is available for electrical connectivity on a second end of the outer conductor, and wherein the outer conductor concentrically surrounds the at least one inner conductor from the second end of the at least one inner conductor available for electrical connectivity to the first end of the outer conductor terminating at the patch element.
Patrick W Fink↗
Interconnect architecture for three-dimensional processing systems
A processing system includes a plurality of processor cores formed in a first layer of an integrated circuit device and a plurality of partitions of memory formed in one or more second layers of the integrated circuit device. The one or more second layers are deployed in a stacked configuration with the first layer. Each of the partitions is associated with a subset of the processor cores that have overlapping footprints with the partitions. The processing system also includes first memory paths between the processor cores and their corresponding subsets of partitions. The processing system further includes second memory paths between the processor cores and the partitions.
Jayasena, Nuwan S.↗