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At least 577 records · Page 32

Collector temperature effects on the performance of advanced thermionic converters and nuclear electric propulsion systems

The specific weight of a thermionic nuclear electric propulsion (NEP) system depends on the collector temperature because of changes in power density, efficiency and the temperature of heat rejection. Increasing the collector temperature above the value for maximum converter performance decreases both the efficiency and the power density of the converters, but the specific weight of the total system is decreased because of the reduction in radiator weight due to the increased heat rejection temperature. The effect of collector temperature on the performance of thermionic converters was investigated. The behavior of conventional ignited mode converters as well as advanced converters with lower collector work functions; the specific mass of an 'uninsulated' NEP system design was then evaluated as a function of collector temperature. The uninsulated design uses the electrical resistance of the heat pipes between the converters and the reactor to provide electrical insolation, eliminating the need for ceramic insulators at emitter temperature and providing other design advantages. The results indicate that an optimum collector temperature, which minimizes system weight, exists at a temperature above the optimum temperature for converter performance.

Dick, R. S.↗

Process for the preparation of polycarboranylphosphazenes

A process for the preparation of polycarboranylphosphazenes is described. Polydihalophosphazenes are allowed to react at ambient temperatures for at least one hour with a lithium carborane in a suitable inert solvent. The remaining chlorine substituents of the carboranyl polyphosphazene are then replaced with aryloxy or alkoxy groups to enhance moisture resistance. The polymers give a high char yield when exposed to extreme heat and flame and can be used as insulation.

Allcock, H. R.↗

Polyimides From a-BPDA and Aromatic Diamines

Polymers having low color and a favorable combination of other properties, including high glass-transition temperature (Tg) and high mechanical properties (strength, tensile modulus, and toughness) will find use in a variety of terrestrial and space applications. Some of the space applications will be in thin films used as membranes on antennas, solar concentrators, coatings on second-surface mirrors, solar sails, sunshades, thermal and optical coatings, and multi-layer thermal insulation blankets. Depending upon the application, the film will be required to exhibit a unique combination of such properties as resistance to degradation by ultraviolet light, visible light, and electrons; low color and/or low solar absorptivity; resistance to tearing and/or wrinkling during packaging and deployment; and high mechanical properties (e.g. high strength, stiffness, and toughness).

Hergenrother, Paul M.↗

Disorder driven variations in magnetoresistance and planar Hall effect in Bi 2 Te 3 thin films

The degenerately doped sesquichalcogenide Bi 2 Te 3 , a well-known thermoelectric material, has attracted much attention in recent years as a topological insulator in which conducting surface states lead to exotic electronic transport. Here, in this study, we report the observation of anisotropic magnetoresistance (AMR) and planar Hall effect (PHE) in polycrystalline thin films of Bi 2 Te 3 over a broad range of temperature and magnetic field strength. The values of AMR, PHE and the Hall mobility (μ H ) are compared with results of similar measurements on single crystals and epitaxial films of Bi 2 Te 3 , where these properties are understood in the framework of electronic transport in the topologically protected conducting surface states. Our textured polycrystalline films show a robust metallic character with a carrier density (n s ) and mobility μ H of 9×10 20 cm -3 and 16.7 cm 2 V -1 s -1 respectively. This carrier density is higher and the mobility lower by an order of magnitude compared to the reported values of n s and μ H in epitaxial films and single crystals. However, we see a comparable AMR and PHE in our films for which the concept of conducting surface states is ill-defined due to their polycrystallinity and disordered structure. We suggest that an anisotropic backscattering of charge carriers in the strongly spin – orbit coupled electronic states of this heavy-metal-based non-magnetic compound may lead to the measured resistivity anisotropy. The observation of AMR and PHE in polycrystalline films may be important for scalable production of Bi 2 Te 3 based AMR and PHE sensors of magnetic fields.

36 MATERIALS SCIENCE↗

Demonstration of resonant tunneling effects in metal-double-insulator-metal (MI2M) diodes

Abstract Although the effect of resonant tunneling in metal-double-insulator-metal (MI 2 M) diodes has been predicted for over two decades, no experimental demonstrations have been reported at the low voltages needed for energy harvesting rectenna applications. Using quantum-well engineering, we demonstrate the effects of resonant tunneling in a Ni/NiO/Al 2 O 3 /Cr/Au MI 2 M structures and achieve the usually mutually exclusive desired characteristics of low resistance ( $${R}_{0}^{DC} \sim$$ R 0 D C ~ 13 kΩ for 0.035 μm 2 ) and high responsivity ( β 0 = 0.5 A W −1 ) simultaneously. By varying the thickness of insulators to modify the depth and width of the MI 2 M quantum well, we show that resonant quasi-bound states can be reached at near zero-bias, where diodes self-bias when driven by antennas illuminated at 30 THz. We present an improvement in energy conversion efficiency by more than a factor of 100 over the current state-of-the-art, offering the possibility of engineering efficient energy harvesting rectennas.

42 ENGINEERING↗

Unusual high-field metal in a Kondo insulator

Strong electronic interactions in condensed-matter systems often lead to unusual quantum phases. One such phase occurs in the Kondo insulator YbB12, the insulating state of which exhibits phenomena that are characteristic of metals, such as magnetic quantum oscillations, a gapless fermionic contribution to heat capacity and itinerant-fermion thermal transport. To understand these phenomena, it is informative to study their evolution as the energy gap of the Kondo insulator state is closed by a large magnetic field. Here we show that clear quantum oscillations are observed in the resulting high-field metallic state in YbB12; this is despite it possessing relatively high resistivity, large effective masses and huge Kadowaki–Woods ratio, a combination that normally precludes quantum oscillations. Both quantum oscillation frequency and cyclotron mass display a strong field dependence. By tracking the Fermi surface area, we conclude that the same quasiparticle band gives rise to quantum oscillations in both insulating and metallic states. These data are understood most simply by using a two-fluid picture in which neutral quasiparticles—contributing little or nothing to charge transport—coexist with charged fermions. Overall, our observations of the complex field-dependent behaviour of the fermion ensemble inhabiting YbB 12 provide strong constraints for existing theoretical models.

36 MATERIALS SCIENCE↗

Thermal Shock-Resistant Composite Crucible

Heating rates of 350 degrees F per minute have not caused cracking. Surrounding inner crucible is annulus of loosely packed alumina powder, which serves as compressible insulating material. Second annulus consisting of section of fused-quartz tubing surrounds and retains alumina powder. Quartz tube held in place by refractory cement helps to contain alumina powder. Small holes in upper ring of cement allow alumina powder to outgas during operation in vacuum. Originally intended for use in Chill Block Melt Spinning (CBMS) apparatus, crucible adaptable to other operations involving rapid self-induction heating of metallic charges.

Geringer, H. J.↗

Data Acquisition System Selection and Calibration of Resistive Moisture Content Measurements for Large-Scale Field Studies in Cold Climate Residential Building Envelope Performance

The residential building stock built before the energy codes were enforced has several significant inefficiency problems in terms of insulation and air leakage. To decrease these inefficiencies, building retrofits are necessary. However, if the envelope is not appropriately designed, excessive accumulation of moisture content and thus mold formation and decay inside the envelope layers can be a vital problem. This risk becomes higher, especially in extreme climate conditions such as cold winters and hot and humid summers as in some northern regions of the U.S. Field studies are essential to test the long-term hygrothermal performance of building envelopes. Although in-situ temperature, RH, and heat flux measurements are straightforward, moisture content measurements are cumbersome. Mainly, because of the heterogeneous nature of the wood materials, deviations and nonuniformities within the materials are unavoidable. Resistance measurements are one of the oldest methods used to measure the moisture content of wood and other building materials. In large-scale studies, it is commonly preferred to use multi-purpose data acquisition systems (DAQ) and custom-made or prefabricated moisture pins to measure the electrical resistance (and thus moisture content) of critical building materials. These multi-purpose DAQ systems generally provide lower costs and offer more flexibility. However, these systems require calibration and fine-tuning to achieve accurate moisture content measurements. A large-scale, two-year-long field study was conducted in northern Minnesota to monitor the hygrothermal performance of residential retrofit wall systems in cold climates. Two base case walls and sixteen different wall treatments were tested. Moisture contents were measured at various layers in each wall treatment using 85 sets of moisture pins. This paper focuses on the overall approach, fabrication, and calibration methodology for the combination of custom-made moisture pins and a multi-purpose DAQ. The aim is to directly use the low-excitation multi-purpose DAQ without any extra voltage regulator. A half-bridge circuit is used to measure wood resistance with 4V excitation voltage and 100 kΩ and 500 kΩ reference resistors. The system is calibrated for four different materials: Douglas fir, lodgepole pine, western red cedar, and oriented strand board (OSB). Calibration experiments were done under controlled conditions in 50% and 65% RH test chambers. Resistance-based moisture content calibration curves are obtained for each species. Results show that higher reference resistors provided better calibration curves for lower excitation voltages.

Desjarlais, Andre Omer↗

Superconductivity by alloying the topological insulator SnBi 2 Te 4

Alloying indium into the topological insulator SnBi 2 Te 4 induces bulk superconductivity with critical temperatures T c up to 1.85 K and upper critical fields up to about 14 kOe. This is confirmed by electrical resistivity, heat capacity, and magnetic susceptibility measurements. The heat capacity shows a discontinuity at T c and temperature dependence below T c consistent with weak coupling BCS theory, and suggests a superconducting gap near 0.25 meV. The superconductivity is type-II and the topological surface states have been verified by photoemission. Here, a simple picture suggests analogies with the isostructural magnetic topological insulator MnBi 2 Te 4 , in which a natural heterostructure hosts complementary properties on different sublattices, and motivates new interest in this large family of compounds. The existence of both topological surface states and superconductivity in Sn 1-x In x Bi 2 Te 4 identifies these materials as promising candidates for the study of topological superconductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Pressure-Induced Exciton Formation and Superconductivity in Platinum-Based Mineral Sperrylite

We report a comprehensive study of Sperrylite (PtAs 2 ), the main platinum source in natural minerals, as a function of applied pressures up to 150 GPa. While no structural phase transition is detected from pressure-dependent X-ray measurements, the unit cell volume shrinks monotonically with pressure following the third-order Birch–Murnaghan equation of state. The mildly semiconducting behavior found in pure synthesized crystals at ambient pressures becomes more insulating upon increasing the applied pressure before metalizing at higher pressures, giving way to the appearance of an abrupt decrease in resistance near 3 K at pressures above 92 GPa consistent with the onset of a superconducing phase. The pressure evolution of the calculated electronic band structure reveals the same physical trend as our transport measurements, with a non-monotonic evolution explained by a hole band that is pushed below the Fermi energy and an electron band that approaches it as a function of pressure, both reaching a touching point suggestive of an excitonic state. A Lifshitz transition of the electronic structure and an increase in the density of states may naturally explain the onset of superconductivity in this material.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Development of the data base for a degradation model of a selenide RTG

The paper is concerned with the evaluation of the materials used in a selenide radioisotope thermoelectric generator (RTG). These materials are composed of n-type gadolinium selenide and n-type copper selenide. A three-fold evaluation approach is being used: (1) the study of the rate of change of the thermal conductivity of the material, (2) the investigation of the long-term stability of the material's Seebeck voltage and electrical resistivity under current and temperature gradient conditions, and (3) determination of the physical behavior and compatibility of the material with surrounding insulation at elevated temperatures. Programmatically, the third category of characteristic evaluation is being emphasized.

Stapfer, G.↗

Advanced Porous Coating for Low-Density Ceramic Insulation Materials

The need for improved coatings on low-density reusable surface insulation (RSI) materials used on the space shuttle has stimulated research into developing tougher coatings. The processing of a new porous composite "coating" for RST called toughened unipiece fibrous insulation Is discussed. Characteristics including performance in a simulated high-speed atmospheric entry, morphological structure before and after this exposure, resistance to Impact, and thermal response to a typical heat pulse are described. It is shown that this coating has improved impact resistance while maintaining optical and thermal properties comparable to the previously available reaction-cured glass coating.

Leiser, Daniel B.↗

The Effect of a Carbon Fiber Layer Between the Cathode and the Current Collector on Battery Cell Performance

Contact resistance between the cathode active material (CAM) and the Al current collector can be reduced by applying carbon coatings to the Al current collector surface. However, this process requires an additional step of carbon layer coating on the current collector, which increases both manufacturing costs and processing time. In the present work, an interlayer of continuous unsized carbon fibers aligned in one direction (CF interlayer), is introduced between the Al current collector and the NMC811 cathode during cathode deposition on the Al current collector. This single-step approach eliminates the need for the additional carbon layer coating on the current collector. Additionally, this approach removes the use of toxic solvents and insulative polymers used for making the carbon coating. The CF interlayer improves the rate capability at higher C-rates. The CF interlayer lowers the contact resistance between the cathode particles and the current collector while improving the activation energy of charge transfer. The peel test showed that the CF interlayer does not affect the adhesion strength of the cathode layer with the current collector.

25 ENERGY STORAGE↗

Emergent mystery in the Kondo insulator samarium hexaboride

Samarium hexaboride (SmB 6 ) is an example of a Kondo insulator, in which strong electron correlations cause a band gap to open. SmB 6 hosts both a bulk insulating state and a conductive surface state. Within a Fermi-liquid framework, the strongly correlated ground-state electronic structure can be mapped to a simple state resembling a topological insulator. Although uncertainties remain, many experiments provide compelling evidence that the conductive surface states have a topological origin. However, the bulk behavior is less well understood and some experiments indicate bulk in-gap states. This has inspired the development of many theories that predict the emergence of new bulk quantum phases beyond Landau’s Fermi-liquid model. We review the current progress on understanding both the surface and the bulk states, especially the experimental evidence for each. A mystery centres on the existence of the bulk in-gap states and why they appear in some experiments but not others. Adding to the mystery is why quantum oscillations in SmB6 appear only in magnetization but not in resistivity. Here, we conclude by elaborating on three questions: why SmB 6 is worth studying, what can be done to move forwards and what other correlated insulators could give additional insight.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

High-pressure characterization of Ag 3 AuTe 2 : Implications for strain-induced band tuning

Recent band structure calculations have suggested the potential for band tuning in the chiral semiconductor Ag 3 AuTe 2 to zero upon application of negative strain. In this study, we report on the synthesis of polycrystalline Ag 3 AuTe 2 and investigate its transport and optical properties and mechanical compressibility. Transport measurements reveal the semiconducting behavior of Ag 3 AuTe 2 with high resistivity and an activation energy E a of 0.2 eV. The optical bandgap determined by diffuse reflectance measurements is about three times wider than the experimental E a ⁠. Despite the difference, both experimental gaps fall within the range of predicted bandgaps by our first-principles density functional theory (DFT) calculations employing the Perdew–Burke–Ernzerhof and modified Becke–Johnson methods. Furthermore, our DFT simulations predict a progressive narrowing of the bandgap under compressive strain, with a full closure expected at a strain of –4% relative to the lattice parameter. To evaluate the feasibility of gap tunability at such substantial strain, the high-pressure behavior of Ag 3 AuTe 2 was investigated by in situ high-pressure x-ray diffraction up to 47 GPa. Mechanical compression beyond 4% resulted in a pressure-induced structural transformation, indicating the possibility of substantial gap modulation under extreme compression conditions.

36 MATERIALS SCIENCE↗

Electronic coherence evolution at the nearly commensurate-incommensurate CDW boundary of 1⁢T−TaS 2

Transition-metal dichalcogenides host a variety of charge-density-wave phases that couple lattice, charge, and correlation effects. In 1⁢𝑇−TaS 2 , the commensurate and nearly commensurate states are well characterized, yet the transition near 350 K into the incommensurate phase has lacked direct momentum-resolved insight. In this work, we use temperature-dependent angle-resolved photoemission spectroscopy to track the electronic structure across this transition. We observe a suppression of quasiparticle spectral weight at the Brillouin-zone center, coincident with the transport anomaly, but without clear evidence of a full band-gap opening. The transition appears to involve momentum-dependent redistribution of spectral weight, consistent with a loss of coherence that reshapes the Fermi surface while leaving conduction dispersions largely intact. These results suggest that the nearly commensurate–incommensurate transition may not align with a conventional metal-insulator transition picture, but rather as an electronic reconstruction driven by loss of coherence. Our work provides new microscopic insight into the resistivity anomaly near room temperature and may guide design principles for collective electronic switching in transition-metal dichalcogenides.

36 MATERIALS SCIENCE↗

Capping layer influence and isotropic in-plane upper critical field of the superconductivity at the FeSe / SrTiO 3 interface

Understanding the superconductivity at the interface of FeSe/SrTiO 3 is a problem of great contemporary interest due to the significant increase in critical temperature (T c ) compared to that of bulk FeSe, as well as the possibility of an unconventional pairing mechanism and topological superconductivity. We report a study of the influence of a capping layer on superconductivity in thin films of FeSe grown on SrTiO 3 using molecular beam epitaxy. We used in vacuo four-probe electrical resistance measurements and ex situ magnetotransport measurements to examine the effect of three capping layers that provide distinct charge transfer into FeSe: insulating FeTe, nonmetallic Te, and metallic Zr. Our results show that FeTe provides an optimal cap that barely influences the inherent T c found in pristine FeSe/SrTiO 3 , while the transfer of holes from a nonmetallic Te cap completely suppresses superconductivity and leads to insulating behavior. Finally, we used ex situ magnetoresistance measurements in FeTe capped FeSe films to extract the angular dependence of the in-plane upper critical magnetic field. Our observations reveal an almost isotropic in-plane upper critical field, providing insight into the symmetry and pairing mechanism of high-temperature superconductivity in FeSe.

36 MATERIALS SCIENCE↗

Bistable Optical Semiconductor Switching Based on C-Doped GaN

Highly resistive gallium nitride (GaN) is an essential material for power optoelectronic applications. While carbon doping is widely used to achieve semi-insulating properties in GaN, the persistent photoconductivity (PPC) arising from deep-level defect traps remains a major obstacle for high-speed power switching. This study demonstrates a novel approach: leveraging the ultrahigh photoresponsivity of GaN:C (up to 2.1 A ⋅ cm/W ⋅ kV, surpassing alternatives such as GaN:Fe) and employing defect-selective optical control to effectively quench the PPC. By synchronizing a short infrared (1064 nm) quenching pulse with UV (385 nm) excitation in an epitaxially grown GaN:C layer on a heavily doped n-type GaN substrate, we achieve a dramatic reduction in photocurrent fall time by approximately 293× (from 470 to 1.6 μ s), increasing modulation bandwidth from 745 Hz to nearly 218 kHz. Here, this advancement not only establishes a new pathway for controlling PPC in GaN:C but also enables the practical integration of GaN:C in fast power switching devices. Enhanced modulation bandwidth, along with GaN:C excellent photoresponsivity, makes it a promising candidate for optically controlled high-voltage, high-power electronic systems, such as photoconductive semiconductor switches (PCSSs) used in pulsed-power drivers, high-power microwave (HPM) sources, and high-voltage gate drivers for wide bandgap (WBG) power electronics.

Carbon-dopped Gallium nitride (GaN:C)↗