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At least 577 records · Page 32
All sourcesNASA NTRSDOE OSTI
NASA NTRS1981

JSC systems using solid ceramic oxygen electrolyte cells to measure oxygen fugacites in gas-mixing systems

Details are given for the construction and operation of a 101.3 KN/sq meter (1 atmosphere) redox control system. A solid ceramic oxygen electrolyte cell is used to monitor the oxygen fugacity in the furnace. The system consists of a vertical quench gas mixing furnace with heads designed for mounting the electrolyte cell and with facilities for inserting and removing the samples, a simplified version of a gas mixing apparatus, and devices for experiments under controlled rates of change of temperature. A thermogravimetric analysis system employing these techniques of redox control and measurement is also described. The calibration and maintenance of the system are discussed.

Williams, R. J.↗
NASA NTRS1981

Experiment Requirements and Implementation Plan (ERIP) for semiconductor materials growth in low-G environment experiment no. MPS-77F087

Crystals of the intermetallic compound Pb1-xSnxTe will be grown in furnaces on the Space Shuttle. The reasons for conducting this growth in space, the program of investigation to develop the space experiment and the requirements that are placed on the Space Shuttle furnace are discussed. Also included are relevent thermophysical properties of Pb1-xSnxTe to the degree which they are known.

Crouch, R. K.↗
NASA NTRS1980

SPAR VI Technical Report for Experiment 76-22: Directional Solidification of Magnetic Composites

Samples of eutectic Bi/MnBi were directionally solidified during a low-g interval aboard the SPAR 6 flight and in a l-g environment under identical furnace velocity and thermal conditions. The Bi/MnBi eutectic is characterized by a regular rod eutectic whose morphology may be sensitive to thermo-solutal convection and by its components, MnBi, which is ferromagnetic. Morphological analyses on samples show statistically smaller interrod spacings and rod diameters with respect to samples grown under identical solidification furnace conditions in l-g. An adjustment between the interrod spacing, growth velocity, and total undercooling at the solidification interface is proposed. Morphological analyses on samples grown in l-g indicate little difference between results for different growth orientations with respect to the gravity vector. The magnetic properties are significantly affected, however, by the presence of a nonequilibrium magnetic phase and the nonequilibrium phase transforms to the equilibrium ferromagnetic phase during isothermal heat treatment.

Pirich, R. G.↗
NASA NTRS1981

Laser annealing of ion implanted CZ silicon for solar cell junction formation

The merits of large spot size pulsed laser annealing of phosphorus implanted, Czochralski grown silicon for function formation of solar cells are evaluated. The feasibility and requirements are also determined to scale-up a laser system to anneal 7.62 cm diameter wafers at a rate of one wafer/second. Results show that laser annealing yields active, defect-free, shallow junction devices. Functional cells with AM 1 conversion efficiencies up to 15.4% for 2 x 2 cm and 2 x 4 cm sizes were attained. For larger cells, 7.62 cm dia., conversion efficiencies ranged up to 14.5%. Experiments showed that texture etched surfaces are not compatible with pulsed laser annealing due to the surface melting caused by the laser energy. When compared with furnace annealed cells, the laser annealed cells generally exhibited conversion efficiencies which were equal to or better than those furnace annealed. In addition, laser annealing has greater throughput potential.

Katzeff, J. S.↗
NASA NTRS1979

Thermally grown oxide and diffusions for automatic processing of integrated circuits

A totally automated facility for semiconductor oxidation and diffusion was developed using a state-of-the-art diffusion furnace and high temperature grown oxides. Major innovations include: (1) a process controller specifically for semiconductor processing; (2) an automatic loading system to accept wafers from an air track, insert them into a quartz carrier and then place the carrier on a paddle for insertion into the furnace; (3) automatic unloading of the wafers back onto the air track, and (4) boron diffusion using diborane with plus or minus 5 percent uniformity. Processes demonstrated include Wet and dry oxidation for general use and for gate oxide, boron diffusion, phosphorous diffusion, and sintering.

Kennedy, B. W.↗
NASA NTRS1980

Low cost monocrystalline silicon sheet fabrication for solar cells by advanced ingot technology

The continuous liquid feed (CLF) Czochralski furnace and the enhanced I.D. slicing technology for the low-cost production of monocrystalline silicon sheets for solar cells are discussed. The incorporation of the CLF system is shown to improve ingot production rate significantly. As demonstrated in actual runs, higher than average solidification rates (75 to 100 mm/hr for 150 mm 1-0-0 crystals) can be achieved, when the system approaches steady-state conditions. The design characteristics of the CLF furnace are detailed, noting that it is capable of precise control of dopant impurity incorporation in the axial direction of the crystal. The crystal add-on cost is computed to be $11.88/sq m, considering a projected 1986 25-slice per cm conversion factor with an 86% crystal growth yield.

Fiegl, G. F.↗
NASA NTRS1980

Mutiple Czochralski growth of silicon crystals from a single crucible

An apparatus for the Czochralski growth of silicon crystals is presented which is capable of producing multiple ingots from a single crucible. The growth chamber features a refillable crucible with a water-cooled, vacuum-tight isolation valve located between the pull chamber and the growth furnace tank which allows the melt crucible to always be at vacuum or low argon pressure when retrieving crystal or introducing recharge polysilicon feed stock. The grower can thus be recharged to obtain 100 kg of silicon crystal ingots from one crucible, and may accommodate crucibles up to 35 cm in diameter. Evaluation of the impurity contents and I-V characteristics of solar cells fabricated from seven ingots grown from two crucibles reveals a small but consistent decrease in cell efficiency from 10.4% to 9.6% from the first to the fourth ingot made in a single run, which is explained by impurity build-up in the residual melt. The crystal grower thus may offer economic benefits through the extension of crucible lifetime and the reduction of furnace downtime.

Lane, R. L.↗
NASA NTRS1981

Development of a high-temperature durable catalyst for use in catalytic combustors for advanced automotive gas turbine engines

Durable catalytic reactors for advanced gas turbine engines were developed. Objectives were: to evaluate furnace aging as a cost effective catalytic reactor screening test, measure reactor degradation as a function of furnace aging, demonstrate 1,000 hours of combustion durability, and define a catalytic reactor system with a high probability of successful integration into an automotive gas turbine engine. Fourteen different catalytic reactor concepts were evaluated, leading to the selection of one for a durability combustion test with diesel fuel for combustion conditions. Eight additional catalytic reactors were evaluated and one of these was successfully combustion tested on propane fuel. This durability reactor used graded cell honeycombs and a combination of noble metal and metal oxide catalysts. The reactor was catalytically active and structurally sound at the end of the durability test.

Tong, H.↗
NASA NTRS1982

Effects of processing and dopant on radiation damage removal in silicon solar cells

Gallium and boron doped silicon solar cells, processed by ion-implantation followed by either laser or furnace anneal were irradiated by 1 MeV electrons and their post-irradiation recovery by thermal annealing determined. During the post-irradiation anneal, gallium-doped cells prepared by both processes recovered more rapidly and exhibited none of the severe reverse annealing observed for similarly processed 2 ohm-cm boron doped cells. Ion-implanted furnace annealed 0.1 ohm-cm boron doped cells exhibited the lowest post-irradiation annealing temperatures (200 C) after irradiation to 5 x 10 to the 13th e(-)/sq cm. The drastically lowered recovery temperature is attributed to the reduced oxygen and carbon content of the 0.1 ohm-cm cells. Analysis based on defect properties and annealing kinetics indicates that further reduction in annealing temperature should be attainable with further reduction in the silicon's carbon and/or divacancy content after irradiation.

Weinberg, I.↗
NASA NTRS1981

Multiple EFG silicon ribbon technology as the basis for manufacturing low-cost terrestrial solar cells

Mackintosh et al. (1978) have reported on the development of a multiple ribbon furnace based on the 'edge defined film fed growth' (EFG) process for the fabrication of silicon ribbon. It has been demonstrated that this technology can meet the requirements for a silicon substrate material to be used in the manufacture of solar panels which can meet requirements regarding a selling price of $0.70/Wp when certain goals in terms of throughput and quality are achieved. These goals for the multiple ribbon technology using 10 cm wide ribbon require simultaneous growth of 12 ribbons by one operator at average speeds of 4 to 4.5 cm/min, and 13% efficient solar cells. A description is presented of the progress made toward achieving these goals. It is concluded that the required performance levels have now been achieved. The separate aspects of technology must now be integrated into a single prototype furnace.

Mackintosh, B.↗
NASA NTRS1982

Acoustic propagation in rigid ducts with blockage

Acoustic levitation has been suggested for moving nonmagnetic material in furnaces for heat processing in space experiments. Basically, acoustic standing waves under resonant conditions are excited in the cavity of the furnace while the material blockage is located at a pressure node and thus at a maximum gradient. The position of the blockage is controlled by displacing the node as a result of frequency change. The present investigation is concerned with the effect of blockage on the longitudinal and transverse resonances of a cylindrical cavity, taking into account the results of a one-dimensional and three-dimensional (3-D) analysis. Based on a Green's function surface element method, 3-D analysis is tested experimentally and proved to be accurate over a wide range of geometric parameters and boundary shapes. The shift in resonance depends on the change in pressure gradient and duct shortening caused by the blockage.

El-Raheb, M.↗
NASA NTRS1982

Segregation effects during growth of pseudo-binary system with large liquidus-solidus separation

Results are reported for an experimental study of the seeded growth, of PbSnTe single crystals in a vertical Bridgman-Stockbarger (B-S) furnace. Profiles of axial and radial segregation of Sn are presented for crystal growth from melts with aspect ratios of 15 and 6.8; the profiles indicate intense convective mixing. A one-dimensional model of heat and mass transfer in an idealized B-S furnace with diffusion control is used to examine the importance of liquidus-solidus separation in determining growth-rate and composition transients in a pseudobinary system. It is shown that the coupling of heat and mass transfer in a pseudobinary system with a large liquidus-solidus separation causes the transient behavior in a nondilute system to differ markedly from such behavior in a dilute system and that PbSnTe crystals with a reasonable diameter can be grown under nearly convectionless conditions in a microgravity environment.

Bourret, E. D.↗
NASA NTRS1983

Thermal Modeling of Bridgman Crystal Growth

Heat Flow modeled for moving or stationary rod shaped sample inside directional-solidification furnace. Program effectively models one-dimensional heat flow in translating or motionless rod-shaped sample inside of directionalsolidification furnace in which adiabatic zone separates hot zone and cold zone. Applicable to systems for which Biot numbers in hot and cold zones are less than unity.

Cothran, E.↗
NASA NTRS1984

Growing Crystals for Infrared Detectors

Unidirectional solidification yields bulk crystals with compositional homogeneity. Unidirectionaly crystal-growth furnace assembly travels vertically so crystal grows upward from bottom tapered end of ampoule. Separately controlled furnaces used for hot (upper) and cold (lower) zones. New process produces ingots with radial compositional homogeneity suitable for fabricating infrared detectors.

Lehoczky, S. L.↗
NASA NTRS1984

Continous Monitoring of Melt Composition

Compositions of glasses and alloys analyzed and corrected in real time. Spectral analysis and temperature measurement performed simultaneously on molten material in container, such as open-hearth furnace, crucible or tank of continuous furnace. Speed of analysis makes it possible to quickly measure concentration of volatile elements depleted by prolonged heating.

Frazer, R. E.↗
NASA NTRS1984

Toroidal Ellipsoid Float-Zone Heater

Furnace heats and melts circumferential ring of material ("Float Zone") on round bar. In float-zone processing, bar pulled through furnace so zone travels along bar.

Davidson, R. B.↗
NASA NTRS1982

Effects of processing and dopant on radiation damage removal in silicon solar cells

Gallium and boron doped silicon solar cells, processed by ion implantation followed by either laser or furnace anneal were irradiated by 1 MeV electrons and their postirradiation recovery by thermal annealing was determined. During the postirradiation anneal, gallium doped cells prepared by both processes recovered more rapidly and exhibited none of the severe reverse annealing observed for similarly processed 2 ohm-cm boron doped cells. Ion implanted furnace annealed 0.1 ohm-cm boron doped cells exhibited the lowest post-irradiation annealing temperatures after irradiation. The drastically lowered recovery temperature is attributed to the reduced oxygen and carbon content of the 0.1 ohm-cm cells. Analysis based on defect properties and annealing kinetics indicates that further reduction in annealing temperature is attainable with further reduction in the silicon's carbon and/or divacancy content after irradiation.

Weinberg, I.↗
NASA NTRS1983

Preliminary science report on the directional solidification of hypereutectic cast iron during KC-135 low-G maneuvers

An ADSS-P directional solidification furnace was reconfigured for operation on the KC-135 low-g aircraft. The system offers many advantages over quench ingot methods for study of the effects of sedimentation and convection on alloy formation. The directional sodification furnace system was first flown during the September 1982 series of flights. The microstructure of the hypereutectic cast iron sample solidified on one of these flights suggests a low-g effect on graphite morphology. Further experiments are needed to ascertain that this effect is due to low-gravity and to deduce which of the possible mechanisms is responsible for it.

Curreri, P. A.↗