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Compact source of positron beams with small thermal emittance
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New precise half-life measurement for the superallowed β+ emitter Ar34
We have measured the half-life of 34 Ar, the parent of a superallowed 0 + → 0 + β transition, to be 0.84646(35) s. With a precision of 0.04%, this result is an essential ingredient needed to complete a third pair of mirror superallowed transitions, 34 Ar → 34 Cl and 34 Cl → 34 S, the ratio of whose ft values would provide the most sensitive test yet of the isospin-symmetry-breaking corrections used to obtain V ud . In a sequence repeated thousands of times, we implanted a very pure 34 Ar beam into tape for 0.7 s, and then rapidly transported the collected source to a shielded 4π proportional gas counter, which detected the decay positrons from the combined decays of 34 Ar and its daughter 34 Cl. The data were analyzed as a linked parent-daughter pair. Our new result replaces one we published 13 years ago.
Intensity of a weak 519-keV γ ray following β decay of the superallowed emitter 34 Ar determined via the 33 S(p,γ) 34 Cl reaction
The predominant branch in the β decay of 34 Ar is the superallowed 0 + → 0 + transition to the ground state of 34 Cl. To determine its important branching ratio one must first establish the ratios for the competing Gamow-Teller branches based on the measured intensities of γ rays subsequently emitted from the excited states they populate in 34 Cl. The strongest of these branches populates the 1 + state at 666 keV in 34 Cl, which has three possible γ-decay paths. Here, we report here a measurement of the decay of this state, which we populated via resonant proton capture in the reaction 33 S(p,γ) 34 Cl. We find that the intensity of the 519-keV γ-ray path is 1.46(19)% relative to that of the 666-keV path. This result is critical to new precise measurements of the superallowed decay of 34 Ar.
Precision half-life determination for the β + emitter N 13
A new precision half-life measurement of 13 N has been conducted using the TwinSol β-counting station at the University of Notre Dame. Here, the measured value of $t^{new}_{1/2}$ = 597.05(19) s differs from the previous world value by about 2.8σ. An evaluation of the 13N half-life results in a $t^{world}_{1/2}$ = 597.19(22) s. Updated Standard Model predictions for the Fermi to Gamow-Teller mixing ratio ρ and its associated correlation parameters have been calculated using the new 13 N world half life in preparation for a future measurement of the mixing ratio. Finally, an ab initio no-core configuration interaction (NCCI) calculation for the B(GT) of this decay, carried out using the Daejeon16 interaction, has been carried out, revealing the need for higher-order chiral corrections.
Topological Quantum Optics Using Atomlike Emitter Arrays Coupled to Photonic Crystals
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Near-Monochromatic Tuneable Cryogenic Niobium Electron Field Emitter
We report creating, manipulating, and detecting coherent electrons is at the heart of future quantum microscopy and spectroscopy technologies. Leveraging and specifically altering the quantum features of an electron beam source at low temperatures can enhance its emission properties. Here, we describe electron field emission from a monocrystalline, superconducting niobium nanotip at a temperature of 5.9 K. The emitted electron energy spectrum reveals an ultranarrow distribution down to 16 meV due to tunable resonant tunneling field emission via localized band states at a nanoprotrusion’s apex and a cutoff at the sharp low-temperature Fermi edge. This is an order of magnitude lower than for conventional field emission electron sources. The self-focusing geometry of the tip leads to emission in an angle of 3.7°, a reduced brightness of 3.8 × 10 8 A/(m 2 srV), and a stability of hours at 4.1 nA beam current and 69 meV energy width. This source will decrease the impact of lens aberration and enable new modes in low-energy electron microscopy, electron energy loss spectroscopy, and high-resolution vibrational spectroscopy.
Nonequilibrium states of a plasmonic Dicke model with coherent and dissipative surface-plasmon–quantum-emitter interactions
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Two-Emitter Multimode Cavity Quantum Electrodynamics in Thin-Film Silicon Carbide Photonics
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Understanding and Controlling the Formation of Nonradiative Defects in Blue Organic Triplet Emitters
Phosphorescent organic light-emitting devices (PHOLEDs) suffer from destructive molecular processes due to triplet-polaron and triplet-triplet annihilation. These processes are energetically driven and hence are particularly active in decreasing the lifetime of blue PHOLEDs. It has recently been shown that increasing triplet radiative rates via the Purcell effect effectively extends the device operational lifetime by reducing the triplet radiative lifetime, thus decreasing their density and the probability of triplet-annihilation reactions. We provide an analytical framework using Marcus theory to explain the observed, approximately exponential relationship between exciton energy and device lifetime. From transient drift-diffusion dynamics, we show that the Purcell effect reduces the exciton density in the steady state and increases the photoluminescent yield, thereby reducing defect generation rates and extending the device lifetime. We control the radiative rate of excitons in microcavities, thereby connecting the exciton energy and decay rates with the observed device lifetime. The device lifetime is shown to follow a power-law dependence on the Purcell factor ( PF m ) with m = 1.5 to 2.5, dependent on the TTA-to-TPA ratio and photoluminescence quantum yield. From our analysis, a fivefold increase in PF has the potential to extend the blue PHOLED lifetime by up to 2 orders of magnitude, making the blue PHOLED lifetime comparable to that of state-of-the-art green PHOLEDs. Published by the American Physical Society 2024
Combinatorial Study of MZO Emitters for CdTe-Based Solar Cells
Precise band alignment at the front interface of CdTe-based solar cells is necessary to reduce photoexcited charge carrier recombination and to enable higher energy conversion efficiencies. Magnesium zinc oxide is not only transparent but also offers the ability to tune the conduction band offset with CdTe at the front of the device stack. In this work, we describe reactive sputtering of Mg 1-x Zn x O using metal targets and its application in CdTe photovoltaics. Combinatorial libraries of Mg 1-x Zn x O were created to tune the conduction band alignment for the optimal performance of CdTe solar cells. Band gap variation of more than 0.4 eV is achieved across a 3-inch substrate. Kelvin probe measurements demonstrate variance of work function across the substrate. Device performance is optimized at band gaps of 3.5 eV for the CdTe device processing conditions employed in this study.
Opportunities and Challenges for Quantum Emitters in One and Two Dimensional Materials
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Scalable manufacturing of quantum light emitters in silicon under rapid thermal annealing
Quantum light sources play a fundamental role in quantum technologies ranging from quantum networking to quantum sensing and computation. The development of these technologies requires scalable platforms, and the recent discovery of quantum light sources in silicon represents an exciting and promising prospect for scalability. The usual process for creating color centers in silicon involves carbon implantation into silicon, followed by rapid thermal annealing. However, the dependence of critical optical properties, such as the inhomogeneous broadening, the density, and the signal-to-background ratio, on centers implantation steps is poorly understood. We investigate the role of rapid thermal annealing on the dynamic of the formation of single color centers in silicon. We find that the density and the inhomogeneous broadening greatly depend on the annealing time. We attribute the observations to nanoscale thermal processes occurring around single centers and leading to local strain fluctuations. Our experimental observation is supported by theoretical modeling based on first principles calculations. The results indicate that annealing is currently the main step limiting the scalable manufacturing of color centers in silicon.
Evidence of photochromism in a hexagonal boron nitride single-photon emitter
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