Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “device physics”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 577 records · Page 32
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

A Cybersecurity Testbed for Smart Buildings

Smart buildings are equipped with a plethora of cyber-physical systems, such as Internet of Things (IoT) devices and building automation systems. These devices, especially in commercial buildings, use legacy communications and hardware that were not designed with cybersecurity in mind. With increasing cyber threats in recent years, smart buildings have become an increasing target for attacks, but not enough published data are available from these incidents to study or replicate the scenarios to defend buildings. As part of the U.S. Department of Energy-funded project focusing on developing the Building Intelligence with Layered Defense Using Security-Constrained Optimization and Security Risk Detection (BUILD-SOS) platform, we developed a cybersecurity test bed for smart buildings. This test bed includes a building simulation tool, virtual devices, emulated operational technology networks, and remote hardware-in-the-loop. Using this test bed, we performed different cyberattacks on the smart building model and collected both physical building data, to understand the impacts on the building, and network data, to aid in separating mechanical faults from cyberattacks during the detection. This test bed is a significant tool in protecting smart buildings from cyberattacks because it can aid in both cybersecurity analysis and the evaluation of other cyberattack detection tools by testing the tools in a secure environment without impacting the building operations.

cyber-physical systems↗
DOE OSTI2024

A Cybersecurity Testbed for Smart Buildings

Smart buildings are equipped with a plethora of cyber-physical systems, such as Internet of Things (IoT) devices and building automation systems. These devices, especially in commercial buildings, use legacy communications and hardware that were not designed with cybersecurity in mind. With increasing cyber threats in recent years, smart buildings have become an increasing target for attacks, but not enough published data are available from these incidents to study or replicate the scenarios to defend buildings. As part of the U.S. Department of Energy-funded project focusing on developing the Building Intelligence with Layered Defense Using Security-Constrained Optimization and Security Risk Detection (BUILD-SOS) platform, we developed a cybersecurity test bed for smart buildings. This test bed includes a building simulation tool, virtual devices, emulated operational technology networks, and remote hardware-in-the-loop. Using this test bed, we performed different cyberattacks on the smart building model and collected both physical building data, to understand the impacts on the building, and network data, to aid in separating mechanical faults from cyberattacks during the detection. This test bed is a significant tool in protecting smart buildings from cyberattacks because they can aid in both cybersecurity analysis and the evaluation of cyberattack detection tools by testing the tools in a secure environment without impacting the building operations.

alfalfa↗
DOE OSTI2021

Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques

The attachment of dopant precursor molecules to depassivated areas of hydrogen-terminated silicon templated with a scanning tunneling microscope (STM) has been used to create electronic devices with subnanometer precision, typically for quantum physics experiments. This process, which we call atomic precision advanced manufacturing (APAM), dopes silicon beyond the solid-solubility limit and produces electrical and optical characteristics that may also be useful for microelectronic and plasmonic applications. However, scanned probe lithography lacks the throughput required to develop more sophisticated applications. In this work, we demonstrate and characterize an APAM device workflow where scanned probe lithography of the atomic layer resist has been replaced by photolithography. An ultraviolet laser is shown to locally and controllably heat silicon above the temperature required for hydrogen depassivation on a nanosecond timescale, a process resistant to under- and overexposure. STM images indicate a narrow range of energy density where the surface is both depassivated and undamaged. Modeling that accounts for photothermal heating and the subsequent hydrogen desorption kinetics suggests that the silicon surface temperatures reached in our patterning process exceed those required for hydrogen removal in temperature-programmed desorption experiments. A phosphorus-doped van der Pauw structure made by sequentially photodepassivating a predefined area and then exposing it to phosphine is found to have a similar mobility and higher carrier density compared with devices patterned by STM. Lastly, it is also demonstrated that photodepassivation and precursor exposure steps may be performed concomitantly, a potential route to enabling APAM outside of ultrahigh vacuum.

nanoscale devices↗
DOE OSTI2021

Wake-up and fatigue mechanisms in ferroelectric Hf 0.5 Zr 0.5 O 2 films with symmetric RuO 2 electrodes

In this work, the mechanisms leading to wake-up and fatigue in ferroelectric hafnium zirconium oxide thin film devices with symmetric RuO 2 electrodes are investigated via polarization, relative permittivity, dielectric nonlinearity, pyroelectric coefficient, and microfocus X-ray diffraction (XRD) measurements. The devices are observed to wake-up for up to 10 3 bipolar pulsed field cycles, after which fatigue occurs with the polarization approaching zero following 10 8 cycles. Wake-up is accompanied by a decrease in both high-field permittivity and hysteresis loop pinching and an increase in pyroelectric coefficient, indicating that the wake-up process involves a combination of transformations from the tetragonal to the orthorhombic phase and domain depinning from defect redistribution. Fatigue is observed to coincide with an increase in irreversible domain wall motion and a decrease in pyroelectric coefficient. Finite pyroelectric coefficients are measured on fully fatigued devices, indicating that domain pinning is a strong contributor to fatigue and that fatigued devices contain domain structures that are unable to switch under the fields applied for measurement. Microfocus XRD patterns measured on each device reveal that the phase constitution is qualitatively unaffected by the field cycling and resultant polarization fatigue. This data indicates that the wake-up process has contributions from both phase transformations and domain depinning, whereas the fatigue process is driven primarily by domain pinning, and the near-zero measured switchable polarization is actually a poled device with immobile domains. These observations provide insight into the physical changes occurring during field cycling of HfO 2 -based ferroelectrics while examining a possible oxide electrode material for silicon CMOS device implementation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Light sources with bias tunable spectrum based on van der Waals interface transistors

Light-emitting electronic devices are ubiquitous in key areas of current technology, such as data communications, solid-state lighting, displays, and optical interconnects. Controlling the spectrum of the emitted light electrically, by simply acting on the device bias conditions, is an important goal with potential technological repercussions. However, identifying a material platform enabling broad electrical tuning of the spectrum of electroluminescent devices remains challenging. Here, we propose light-emitting field-effect transistors based on van der Waals interfaces of atomically thin semiconductors as a promising class of devices to achieve this goal. We demonstrate that large spectral changes in room-temperature electroluminescence can be controlled both at the device assembly stage –by suitably selecting the material forming the interfaces– and on-chip, by changing the bias to modify the device operation point. Even though the precise relation between device bias and kinetics of the radiative transitions remains to be understood, our experiments show that the physical mechanism responsible for light emission is robust, making these devices compatible with simple large areas device production methods.

36 MATERIALS SCIENCE↗
NASA NTRS1981

High speed techniques for synthetic aperture radar image formation

One possible approach to high speed synthetic aperture radar signal reconstruction involves the utilization of two dimensional real time spatial light modulators as recyclable replacements for photographic film in the input transducer plane of a modified synthetic aperture radar (SAR) coherent optical processor. Leading candidate spatial light modulators include modified Pockels readout optical modulators (PROM), charge coupled devices (CCD) addressed liquid crystal light valves, and CCD addressed membrane light modulators. The fundamental physical limitations affecting SAR processor performance characteristics of such real time devices are under investigation. Current research on PROM is focused on the effects of device operatonal mode, device constitutive parameters, electro-optic crystal orientation, writing wavelength, frame rate/data overwrite/presuming, erasure completeness, and image retention on the overall quality of SAR image formation. Both modulated laser scanning and intensified CRT temporal to spatial input approaches are being examined.

Psaltis, D.↗
NASA NTRS1984

Wind abrasion on Venus: A means for experimental investigations

A study to determine the feasibility of conducting experiments to simulate the aeolian environment on Venus as related to wind abrasion was completed. Ideally, such experiments should involve complete investigation of weathering, in which mechanical, thermal, and chemical parameters are taken into account. This is particularly important for Venus, where atmospheric temperatures and pressures at the surface produce an environment which is equivalent to low or medium grade metamorphic conditions on Earth. Details that describe the Venus Aeolian Abrasion Device (VAAD) are included. The VAAD device would enable experiments to be conducted with the same chemistry, temperature, pressure, and other physical properties of the Venus atmosphere near the surface. The proposed device enables the important aeolian parameters to be controlled and monitored, including particle size, velocity, impact-angle and flux, atmospheric pressure, temperature, and gas composition.

Greeley, R.↗
NASA NTRS2000

Growth and Characterization of III-V Semiconductors for Device Applications

The research goal was to achieve a fundamental understanding of the physical processes occurring at the surfaces and interfaces of epitaxially grown InGaAs/GaAs (100) heterostructures. This will facilitate the development of quantum well devices for infrared optical applications and provide quantitative descriptions of key phenomena which impact their performance. Devices impacted include high-speed laser diodes and modulators for fiber optic communications at 1.55 micron wavelengths and intersub-band lasers for longer infrared wavelengths. The phenomenon of interest studied was the migration of indium in InGaAs structures. This work centered on the molecular beam epitaxy reactor and characterization apparatus donated to CAU by AT&T Bell Laboratories. The material characterization tool employed was secondary ion mass spectrometry. The training of graduate and undergraduate students was an integral part of this program. The graduate students received a thorough exposure to state-of-the-art techniques and equipment for semiconductor materials analysis as part of the Master''s degree requirement in physics. The undergraduates were exposed to a minority scientist who has an excellent track record in this area. They also had the opportunity to explore surface physics as a career option. The results of the scientific work was published in a refereed journal and several talks were presented professional conferences and academic seminars.

Williams, Michael D.↗
DOE OSTI2023

Elimination of the bias-stress effect in ligand-free quantum dot field-effect transistors

Field-effect transistors (FETs) made from colloidal quantum dot (QD) solids commonly suffer from current–voltage hysteresis caused by the bias-stress effect (BSE), which complicates fundamental studies of charge transport in QD solids and the use of QD FETs in electronics. Here, we show that the BSE can be eliminated in n-channel PbSe QD FETs by first removing the QD ligands with a dose of H 2 S gas and then infilling the QD films with alumina by atomic layer deposition (ALD). The H 2 S-treated, alumina-infilled FETs have stable, hysteresis-free device characteristics (total short-term stability), indefinite air stability (total long-term stability), and a high electron mobility of up to 14 cm 2 V −1 s −1 , making them attractive for QD circuitry and optoelectronic devices. The BSE-free devices are utilized to conclusively establish the dependence of the electron mobility on temperature and QD diameter. We demonstrate that the BSE in these devices is caused by both electron trapping at the QD surface and proton drift within the film. The H 2 S/alumina chemistry produces ligand-free PbSe/PbS/Al 2 O 3 interfaces that lack the traps that cause the electronic part of the BSE, while full alumina infilling stops the proton motion responsible for the ionic part of the BSE. In conclusion, our matrix engineering approach should aid efforts to eliminate the BSE, boost carrier mobilities, and improve charge transport in other types of nanocrystal solids.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Overview of the SPARC tokamak

The SPARC tokamak is a critical next step towards commercial fusion energy. SPARC is designed as a high-field ( $B_0 = 12.2$ T), compact ( $R_0 = 1.85$ m, $a = 0.57$ m), superconducting, D-T tokamak with the goal of producing fusion gain $Q>2$ from a magnetically confined fusion plasma for the first time. Currently under design, SPARC will continue the high-field path of the Alcator series of tokamaks, utilizing new magnets based on rare earth barium copper oxide high-temperature superconductors to achieve high performance in a compact device. The goal of $Q>2$ is achievable with conservative physics assumptions ( $H_{98,y2} = 0.7$ ) and, with the nominal assumption of $H_{98,y2} = 1$ , SPARC is projected to attain $Q \approx 11$ and $P_{\textrm {fusion}} \approx 140$ MW. SPARC will therefore constitute a unique platform for burning plasma physics research with high density ( $\langle n_{e} \rangle \approx 3 \times 10^{20}\ \textrm {m}^{-3}$ ), high temperature ( $\langle T_e \rangle \approx 7$ keV) and high power density ( $P_{\textrm {fusion}}/V_{\textrm {plasma}} \approx 7\ \textrm {MW}\,\textrm {m}^{-3}$ ) relevant to fusion power plants. SPARC's place in the path to commercial fusion energy, its parameters and the current status of SPARC design work are presented. This work also describes the basis for global performance projections and summarizes some of the physics analysis that is presented in greater detail in the companion articles of this collection.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS2006

Applied Physics Lab Kennedy Space Center: Recent Contributions

The mission of the Applied Physics Lab is: (1) Develop and deliver novel sensors and devices to support KSC mission operations. (2) Analyze operational issues and recommend or deliver practical solutions. (3) Apply physics to the resolution of long term space flight issues that affect space port operation on Earth or on other planets.

Starr, Stan↗
DOE OSTI2020

Reversed Field Pinch Research in MST (Final Technical Report)

This is the Final Technical Report for the cooperative agreement DE-FC02-05ER54814 titled “Reversed Field Pinch Research in MST” spanning the funding period 4/1/2005 to 12/14/2019. It summarizes key results from MST research, major publications and presentations, and the mentoring of graduate students and postdocs. The Madison Symmetric Torus (MST) is unique within the U.S. and world fusion plasma program. As one of just five operating reversed field pinch (RFP) experiments, and the only one in the U.S., MST has had an important role in advancing the fundamental understanding of the RFP plasma configuration. The MST research program targets topics that intersect with all three goals. While MST provides a unique opportunity to advance the science and fusion potential of the RFP, as a cousin to the tokamak and stellarator plasma configurations the RFP is a valuable partner in establishing validated predictive capability for fusion science more generally. Specific combinations of the major variables in toroidal confinement, like magnetic field strength, plasma current, and shaping, define the different configurations. By exploring adjacent regions in this major variable parameter space, the RFP exposes dependencies not otherwise accessible in the tokamak and stellarator. This diversity enlarges the arena for scientific discovery, both for fusion and plasma physics. The basic science emphasis for MST research has been the self-organizing behavior of RFP plasmas. This inspired MST’s participation in the NSF Physics Frontier Center for Magnetic Self-Organization in Laboratory and Astrophysical Plasmas (CMSO), which ran from 2004-2016 and motivated a substantial fraction of MST’s research goals and capabilities. By all measures the MST Program has been remarkably successful in publications, community engagement, and mentoring of young scientists. While the DOE-FES’s proof-of-principle program for the RFP now languishes through the cessation of this cooperative agreement, operation of MST continues as one of two devices included in the new Wisconsin Plasma Physics Laboratory (WiPPL) basic science user facility. The scope of present research for MST in WiPPL is narrowed to the basic science associated with the RFP magnetic configuration and the advancement of specific fusion topics, which now includes studies of disruptions in tokamak plasmas. The world’s effort in RFP fusion research continues, despite a lack of U.S. federal support to investigate the RFP configuration for fusion application, most notably through a major upgrade to the RFX-mod2 facility in Italy [1] and the recent construction of the KTX facility at USTC in China. First plasmas for RFX-mod2 are anticipated in 2021.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Obtaining bulk-like correlated oxide surfaces with protective caps

Functional oxides exhibit a diverse range of correlated electron phenomena, some of which are highly attractive for novel electronic, magnetic, and optical devices. Despite decades of advancement of our fundamental understanding of these materials, they consistently fall short of realizing their promise in functional devices. We identify a significant bottleneck toward device realization to be surface overoxidation. Protective caps can effectively prevent overoxidation, but their interfaces with functional oxides are not well understood. These interfaces are critical for effectively using functional oxides in field-effect devices, where “the interface is the device.” This work addresses the chemistry and physics of the interface between protective caps and the correlated metal SrVO3, a model functional oxide. Our comparison of five different cap materials reveals effective protection and similar SrVO3 surface chemistry in all cases. Systematic comparisons of surface and bulk-sensitive photoelectron spectra reveal that negligible interface redox takes place, elucidating the cap-SrVO3 interface chemistry. This work demonstrates a robust and simple solution to the surface overoxidation problem in vanadates, paving the way toward effectively using these materials in field-effect devices. Our conclusions are general and can be applied to numerous other systems, thus moving oxide electronics closer to the realization of functional devices.

Cohen, Amit (ORCID:0009000276477510)↗
DOE OSTI2023

Holographic Nano‐Imaging of Terahertz Dirac Plasmon Polaritons in Topological Insulator Antenna Resonators

Abstract Excitation of Dirac plasmon polaritons (DPPs) in bi‐dimensional materials have attracted considerable interest in recent years, both from perspectives of understanding their physics and exploring their transformative potential for nanophotonic devices, including ultra‐sensitive plasmonic sensors, ultrafast saturable absorbers, modulators, and switches. Topological insulators (TIs) represent an ideal technological platform in this respect because they can support plasmon polaritons formed by Dirac carriers in the topological surface states. Tracing propagation of DPPs is a very challenging task, particularly at terahertz (THz) frequencies, where the DPP wavelength becomes over one order of magnitude shorter than the free space photon wavelength. Furthermore, severe attenuation hinders the comprehensive analysis of their characteristics. Here, the properties of DPPs in real TI‐based devices are revealed. Bi 2 Se 3 rectangular antennas can efficiently confine the propagation of DPPs to a single dimension and, as a result, enhance the DPPs visibility despite the strong intrinsic attenuation. The plasmon dispersion and loss properties from plasmon profiles are experimentally determined, along the antennas, obtained using holographic near‐field nano‐imaging in a wide range of THz frequencies, from 2.05 to 4.3 THz. The detailed investigation of the unveiled DPP properties can guide the design of novel topological quantum devices exploiting their directional propagation.

Chemistry↗
NASA NTRS2010

Dose-Response Evaluation of Braslet-M Occlusion Cuffs

Introduction: Braslet-M is a set of special elasticized thigh cuffs used by the Russian space agency to reduce the effects of the head-ward fluid shift during early adaptation to microgravity by sequestering fluid in the lower extremities. Currently, no imaging modalities are used in the calibration of the device, and the pressure required to produce a predictable physiological response is unknown. This investigation intends to relate the pressure exerted by the cuffs to the extent of fluid redistribution and commensurate physiological effects. Materials and Methods: Ten healthy subjects with standardized fluid intake participated in the study. Data collection included femoral and internal jugular vein imaging in two orthogonal planes, pulsed Doppler of cervical and femoral vessels and middle cerebral artery, optic nerve imaging, and echocardiography. Braslet-M cuff pressure was monitored at the skin interface using pre-calibrated pressure sensors. Using 6 and 30 head-down tilt in two separate sessions, the effect of Braslet-M was assessed while incrementally tightening the cuffs. Cuffs were then simultaneously released to document the resulting hemodynamic change. Results: Preliminary analysis shows correlation between physical pressure exerted by the Braslet-M device and several parameters such as jugular and femoral vein cross-sections, resistivity of the lower extremity vascular bed, and others. A number of parameters reflect blood redistribution and will be used to determine the therapeutic range of the device and to prevent unsafe application. Conclusion: Braslet-M exerts a physical effect that can be measured and correlated with many changes in central and peripheral hemodynamics. Analysis of the full data set will be required to make definitive recommendations regarding the range of safe therapeutic application. Objective data and subjective responses suggest that a safer and equally effective use of Braslet can be achieved when compared with the current non-imaging calibration techniques.

Ebert, Douglas↗
DOE OSTI2024

Gas Evolution in Water Electrolysis

Gas bubbles generated by the hydrogen evolution reaction and oxygen evolution reaction during water electrolysis influence the energy conversion efficiency of hydrogen production. Here we survey what is known about the interaction of gas bubbles and electrode surfaces and the influence of gas evolution on practicable devices used for water electrolysis. Here, we survey the physical processes occurring during the life cycle of a bubble, summarize techniques used to characterize gas evolution phenomena in-situ and in practical device environments, and discuss ways that electrodes can be tailored to facilitate gas removal at high current densities. Lastly, we summarize efforts to model the behavior of individual gas bubbles and multiphase flows produced at gas evolving electrodes. We conclude our review with a short summary of outstanding questions which could be answered by future efforts to characterize gas evolution in electrochemical device environments or by improved simulations of multiphase flows.

Bubbles↗
DOE OSTI2023

A framework for understanding efficient diurnal CO 2 reduction using Si and GaAs photocathodes

Integrated solar fuels and photoelectrochemical (PEC) CO 2 reduction (CO 2 R) are promising pathways toward producing value-added chemicals from CO 2 . However, improvements are needed in activity and selectivity as well as in fundamental understanding of device behavior to engender wide deployment. Here, we report two single-junction, integrated photocathodes for PEC CO 2 R based on TOPCon Si and GaAs substrates, which achieve -10 mA cm -2 at -0.33 V vs. RHE with 41% selectivity to C 2+ products and at -0.03 V vs. RHE with 27% selectivity to C 2+ products, respectively. We investigated the viability of a light-mediated strategy to direct selectivity in buried-junction PEC devices and confirmed that these devices could be optimized independently and described by the physics-based models of the individual components. Finally, we designed a framework to assess operational modes for PEC CO 2 R devices and demonstrated this framework under continuous galvanostatic control and variable illumination conditions.

14 SOLAR ENERGY↗
DOE OSTI2025

High-Resolution Full-Field Structural Microscopy of the Voltage-Induced Filament Formation in VO 2 -Based Neuromorphic Devices

In order to make neuromorphic functions in memristive devices more efficient, information about the structural properties of filament formation at the micro- and mesoscopic scales is necessary. Despite extensive research on VO 2 , a key material due to its filament formation, local operando structural measurements remain challenging and often involve destructive specimen preparation and long rastering times, greatly limiting the scope of experimental studies. Utilizing dark-field X-ray microscopy (DFXM), a fullfield imaging modality, structural signatures of the filament formation process operando are revealed in VO 2 devices. DFXM experiments illustrate that rutile filaments contain isolated monoclinic clusters, indicating structural nonuniformity interior to the filament. The formation of the rutile phase beneath device electrodes was shown to precede filament development, followed by the formation of filament paths guided by nucleation sites within the device. Finally, a medium-term (<30 min) memory mechanism is observed in VO 2 , mediated by sites within the device gap that tend to switch at significantly lower voltages after electrical cycling, a tendency that persists through a brief thermal reset. High spatial resolution, large field-of-view, structure selectivity, and fast signal acquisition of DFXM provided insight into structural features of the filamentary channel and surrounding regions during voltage cycling.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗