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At least 577 records · Page 32

Probing electronic and dielectric properties of ultrathin Ga 2 O 3 /Al 2 O 3 atomic layer stacks made with in vacuo atomic layer deposition

Ultrathin (1–4 nm) films of wide-bandgap semiconductors are important to many applications in microelectronics, and the film properties can be sensitively affected by defects especially at the substrate/film interface. Motivated by this, an in vacuo atomic layer deposition (ALD) was developed for the synthesis of ultrathin films of Ga 2 O 3 /Al 2 O 3 atomic layer stacks (ALSs) on Al electrodes. It is found that the Ga 2 O 3 /Al 2 O 3 ALS can form an interface with the Al electrode with negligible interfacial defects under the optimal ALD condition whether the starting atomic layer is Ga 2 O 3 or Al 2 O 3 . Such an interface is the key to achieving an optimal and tunable electronic structure and dielectric properties in Ga 2 O 3 /Al 2 O 3 ALS ultrathin films. In situ scanning tunneling spectroscopy confirms that the electronic structure of Ga 2 O 3 /Al 2 O 3 ALS can have tunable bandgaps (E g ) between ~2.0 eV for 100% Ga 2 O 3 and ~3.4 eV for 100% Al 2 O 3 . With variable ratios of Ga:Al, the measured E g exhibits significant non-linearity, agreeing with the density functional theory simulation, and tunable carrier concentration. Furthermore, the dielectric constant of ultrathin Ga 2 O 3 /Al 2 O 3 ALS capacitors is tunable through the variation in the ratio of the constituent Ga 2 O 3 and Al 2 O 3 atomic layer numbers from 9.83 for 100% Ga 2 O 3 to 8.28 for 100% Al 2 O 3 . The high ε leads to excellent effective oxide thickness ~1.7–2.1 nm for the ultrathin Ga 2 O 3 /Al 2 O 3 ALS, which is comparable to that of high-K dielectric materials.

36 MATERIALS SCIENCE↗

Extending the family of reduced [Mn 12 O 12 (O 2 CR) 16 (H 2 O) x ] n- complexes, and their sensitivity to environmental factors

Here, the family of reduced [Mn 12 O 12 (O 2 CR) 16 (H 2 O) 4 ] n- (n = 1, 2) single-molecule magnets (SMMs) has been expanded with the synthesis of new members using I - as a stoichiometric one-electron reducing agent of the neutral n = 0 complexes. Electrochemical data, 1 H NMR spectra of the [Mn 12 O 12 (O 2 CCH 2 Cl) 16 (H 2 O) 3 ] 0,-,2- salts, and the crystal structures of two complexes, (PPh 4 )[Mn 12 O 12 (O 2 CCHCl 2 ) 16 (H 2 O) 4 ] and (PPh 4 ) 2 [Mn 12 O 12 (O 2 CCH 2 Cl) 16 (H 2 O) 3 ] have been obtained. For (PPh 4 ) 2 [Mn 12 O 12 (O 2 CCH 2 Cl) 16 (H 2 O) 3 ], the data confirm an S = 10 ground state, and magnetization vs dc field scans on a pristine crystal exhibit hysteresis loops possessing steps due to quantum tunneling of magnetization (QTM). In addition, two forms of the cluster have been identified in the crystal with distinctly different relaxation barriers, with the faster-relaxing form being the majority one in pristine crystals from mother liquor, and the slower-relaxing one becoming the majority one in vacuum-dried samples. Similar behavior is seen for (PPh 4 )[Mn 12 O 12 (O 2 CCHCl 2 ) 16 (H 2 O) 4 ] with an S = 19 / 2 ground state, which shows three forms to be present in the hysteresis loops of a pristine crystal, all converting to a slow-relaxing form on vacuum-drying. High-frequency EPR spectra of the latter confirm a high axial anisotropy with $\mathcal{D}$ = -0.477 cm -1 and rationalize its effective relaxation barrier U eff = 57 K. The combined work emphasizes a high sensitivity of such ultra-small nanomagnets to environmental influences, affecting their properties significantly, especially their quantum properties that are so important to many potential new 21st century applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Tuning Discharge Behavior of Hollandite α-MnO 2 in Hydrated Zinc Ion Battery by Transition Metal Substitution

The tunnel-type hollandite α-MnO 2 is a promising cathode material for rechargeable aqueous zinc-ion batteries (ZIBs) due to its low cost in synthesis and high energy density. However, irreversible structural degradation upon continuous cycling prevents the cathode from being utilized commercially. Herein, density functional theory (DFT) was utilized to conduct a systematic study on tuning the behavior of α-MnO 2 by substituting the Mn ions on the tunnel wall with a transition metal (V or Cr) during the H + -/Zn 2+ -intercalation in hydrated ZIB. Our study revealed that both substituents aid cyclability and capacity retention with Cr outperforming V. In term of discharge voltage, only the Cr-substitution displays clear promotion at the early stage of discharge. The superior performance of substituted Cr 4+ comes from its unique atomic and electronic structures. Upon discharge, it can be reduced to Cr 3+ more readily than Mn 4+ and thereby limits the formation of unstable Mn 3+ or Mn 2+ centers; the formed Cr 3+ is more stable than Mn 3+ and Mn 2+ from the reduction of Mn 4+ ; and Cr 3+ can also greatly stabilize the neighboring Mn ions. Here this study highlights the significant tuning effect of transition metal substitution on the electrochemical and physical performance of α-MnO 2 as a cathode in hydrated ZIBs.

25 ENERGY STORAGE↗

Methanol Synthesis from CO 2 Hydrogenation over a Potassium-Promoted Cu x O/Cu(111) ( x ≤ 2) Model Surface: Rationalizing the Potential of Potassium in Catalysis

Alkalis have been reported as a promotor in the heterogeneous catalysis, being able to enhance the activity and selectivity of catalysts. The effective utilization of alkalis in catalyst optimization requires the fundamental understanding of the underlying mechanism. In this work, we take a potassium (K)-modified Cu x O/Cu(111) (x ≤ 2) model surface as a case study to rationalize the nature of K during the carbon dioxide hydrogenation using combined density functional theory (DFT) calculation and the kinetic Monte Carlo (KMC) simulation. Our result demonstrates the significant tuning of selectivity from carbon monoxide to methanol on going from Cu(111) to K-modified Cu x O/Cu(111). The deposited K + stabilizes the Cu x O thin film under the reducing condition of carbon dioxide hydrogenation. More importantly, our study reveals that K + acts as an active center for selective tuning in the binding, an accelerator for charge transfer, and a mediator for the electron tunneling. As a result, the K-modified Cu x O/Cu(111) opens a methanediol [H 2 C(OH) 2 ]-mediated formate pathway to facilitate the selective conversion of carbon dioxide to methanol. Our study develops the intrinsic rules of design to tune the catalytic performance using alkali metals.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Contributions to the BeEST sterile neutrino search

Sterile neutrinos are hypothetical right-handed leptons that have been postulated as extensions to the Standard Model to help explain the origin of neutrino masses and the matter-antimatter asymmetry in the Universe. Sterile neutrinos with keV-scale masses are also a promising candidate for dark matter. LLNL and the Colorado School of Mines are developing an experiment to search for sterile neutrinos by measuring the \Beryllium-7 Electron capture in Superconducting Tunnel junctions (STJs)" (the \BeEST" Experiment). When 7 Be implanted into STJ radiation detectors decays by electron capture, the neutrino escapes and the energy of the recoiling 7 Li nucleus can be measured with high accuracy. Using conservation of energy and momentum, the mass of the emitted neutrino can then be found. Sterile keV neutrinos would generate additional peaks in the spectrum, and the experiment uses high-resolution STJs to observe such a potential signal. During my internship, I contributed to different aspects of the BeEST experiment. I designed a UHV setup for X-ray spectroscopy analysis with STJs. It will allow high-resolution X-ray spectroscopy of different materials to examine the broadening in the BeEST spectra, the origins of which are unknown but may be related to material effects inside the STJ detectors. The design accounts for the specific demands of the BeEST project, but provides a degree of flexibility that makes it useful for other potential STJ projects. Additionally, to test the accuracy of the electronics and data analysis routine, an arbitrary waveform generator (AWG) will be used to generate simulated spectra that contain sterile neutrino signals of a specified mass and admixture. For this I programmed an AWG to output random STJ signals whose amplitudes follow the appropriate user-de ned probability distribution. The AWG signals can be input into the 32-channel preamplifier to simulate any spectrum of interest and test the uniformity of the amplifier chain, as well as the sensitivity of the data analysis.

42 ENGINEERING↗

Probabilistic Neural Computing with Stochastic Devices

Abstract The brain has effectively proven a powerful inspiration for the development of computing architectures in which processing is tightly integrated with memory, communication is event‐driven, and analog computation can be performed at scale. These neuromorphic systems increasingly show an ability to improve the efficiency and speed of scientific computing and artificial intelligence applications. Herein, it is proposed that the brain's ubiquitous stochasticity represents an additional source of inspiration for expanding the reach of neuromorphic computing to probabilistic applications. To date, many efforts exploring probabilistic computing have focused primarily on one scale of the microelectronics stack, such as implementing probabilistic algorithms on deterministic hardware or developing probabilistic devices and circuits with the expectation that they will be leveraged by eventual probabilistic architectures. A co‐design vision is described by which large numbers of devices, such as magnetic tunnel junctions and tunnel diodes, can be operated in a stochastic regime and incorporated into a scalable neuromorphic architecture that can impact a number of probabilistic computing applications, such as Monte Carlo simulations and Bayesian neural networks. Finally, a framework is presented to categorize increasingly advanced hardware‐based probabilistic computing technologies.

Misra, Shashank↗

Site Mixing for Engineering Magnetic Topological Insulators

The van der Waals compound, MnBi 2 Te 4 , is the first intrinsic magnetic topological insulator, providing a materials platform for exploring exotic quantum phenomena such as the axion insulator state and the quantum anomalous Hall effect. However, intrinsic structural imperfections lead to bulk conductivity, and the roles of magnetic defects are still unknown. With higher concentrations of the same types of magnetic defects, the isostructural compound MnSb 2 Te 4 is a better model system for a systematic investigation of the connections among magnetism, topology, and lattice defects. In this work, the impact of antisite defects on the magnetism and electronic structure is studied in MnSb 2 Te 4 . Mn-Sb site mixing leads to complex magnetic structures and tunes the interlayer magnetic coupling between antiferromagnetic and ferromagnetic. The detailed nonstoichiometry and site mixing of MnSb2Te4 crystals depend on the growth parameters, which can lead to ≈40% of Mn sites occupied by Sb and ≈15% of Sb sites by Mn in as-grown crystals. Single-crystal neutron diffraction and electron microscopy studies show nearly random distribution of the antisite defects. Band structure calculations suggest that the Mn-Sb site mixing favors a ferromagnetic interlayer coupling, consistent with experimental observation, but is detrimental to the band inversion required for a nontrivial topology. Overall, our results suggest a long-range magnetic order of Mn ions sitting on Bi sites in MnBi 2 Te 4 . The effects of site mixing should be considered in all layered heterostructures that consist of alternating magnetic and topological layers, including the entire family of MnTe(Bi 2 Te 3 )n, its Sb analogs, and their solid solution.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Dynamic Wind Loading on CSP Collectors Caused by Turbulent Wind Fluctuations: Insights from a 2-Year Field Campaign

Concentrating Solar Power (CSP) is a promising solar technology for electricity generation with thermal energy storage and with the additional benefit of industrial heat production. Wind loading on CSP collector structures, such as parabolic troughs or heliostats, is one of the primary drivers of their structural design costs. In particular, dynamic wind loading is a major source of uncertainty in the collector design process, which heavily relies on wind tunnel testing. In the field, the turbulent nature of the incoming wind creates fluctuating loads (support structure loads and resulting mirror deflections) on the collectors, with impacts on fatigue lifetime and optical performance. As is well known, wind tunnel tests cannot entirely reproduce the complex turbulent wind conditions typically observed at full-scale plants. To shed light on this topic, NREL initiated a field campaign at the operational Nevada Solar One (NSO) powerplant that uses parabolic troughs as solar collectors. The aim of the project is a detailed characterization of prevailing wind and turbulence conditions and resulting operational loads on parabolic troughs. We use the published 2-year dataset of high-resolution combined wind and structural loads measurements [1] to characterize the dynamic structural wind response. For quantifying dynamic wind loading, we apply the concept of admittance functions, which are spectral transfer functions that couple the turbulent wind to resulting structural loads (aerodynamic admittance), and to the structural response (mechanical admittance). In practice, aerodynamic admittance describes which turbulent eddy sizes are effective in creating structural loads. The mechanical admittance describes in which frequency ranges these loads are reinforced or dampened by the structure. While these functions are an established concept in civil engineering, their recent application to a single full-scale heliostat [2] proved their broader applicability to CSP collectors. Here, we present a characterization of admittance functions for full-scale parabolic trough collectors and show how wind characteristics (mean wind speed and direction, turbulent kinetic energy, turbulent length scales), the sun-tracking trough angle, and row position alter the admittance functions. Further, we study to which extent the admittance functions are universal for a specific trough geometry and how our findings compare to reported heliostat results. References [1] https://data.openei.org/submissions/5938. [2] Blume, K., Roger, M., and Pitz-Paal, R. 2023b. "Simplified analytical model to describe wind loads and wind-induced tracking deviations of heliostats." Solar Energy, 256, 96-109. https://doi.org/10.1016/j.solener.2023.03.055.

admittance functions↗

Interaction-induced velocity renormalization in magic-angle twisted multilayer graphene

Abstract Twistronics heterostructures provide a novel route to control the electronic single particle velocity and thereby to engineer strong effective interactions. Here we show that the reverse may also hold, i.e. that these interactions strongly renormalize the band structure. We demonstrate this mechanism for alternating-twist magic-angle three- and four-layer graphene at charge neutrality and in the vicinity of a phase transition which can be described by an Ising Gross-Neveu critical point corresponding, e.g. to the onset of valley Hall or Hall order. While the non-interacting model displays massless Dirac excitations with strongly different velocities, we show that interaction corrections make them equal in the infrared. However, the renormalization group flow of the velocities and of the coupling to the critical bosonic mode is strongly non-monotonic and dominated by the vicinity of a repulsive fixed point. We predict experimental consequences of this theory for tunneling and transport experiments and discuss the expected behavior at other quantum critical points, including those corresponding to intervalley coherent ordering.

Classen, Laura↗

Spectral Function of the Chiral One-Dimensional Fermi Liquid in the Regime of Strong Interactions

We study momentum-resolved tunneling into a system of spinless chiral one-dimensional fermions, such as electrons at the edge of an integer quantum Hall system. Interactions between particles give rise to broadening of the spectral function of the system. We develop an approach that enables one to obtain the shape of the peak in the spectral function in the regime of strong interaction. We apply our technique to the special cases of short-range and Coulomb interactions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Techno-economic analysis of the use of atomic layer deposited transition metal oxides in silicon heterojunction solar cells

The industry for producing silicon solar cells and modules has grown remarkably over the past decades, with more than a 100-fold reduction in price over the past 45?years. The main solar cell fabrication technology has shifted over that time and is currently dominated by the passivated emitter and rear cell (PERC). Other technologies are expected to increase in market share, including tunnel-oxide passivated contact (TOPCon) and heterojunction technology (HJT). In this paper, we examine the cost potential for using atomic layer deposition (ALD) to form transition metal oxide (TMO) layers (MoO x , TiO x and aluminium-doped zinc oxide [AZO]) to use as lower cost alternatives of the p-doped, n-doped and indium tin oxide (ITO) layers, respectively, the layers normally used in HJT solar cells. Using a bottom-up cost and uncertainty model with equipment cost data and process experience in the lab, we find that the production cost of these variations will likely be lower per wafer than standard HJT, with the main cost drivers being the cost of the ALD precursors at high-volume production. We then considered what efficiency is required for these sequences to be cost effective in $/W and discuss whether these targets are technically feasible. This work motivates further work in developing these ALD TMO processes to increase their efficiency towards their theoretical limits to take advantage of the processing cost advantage.

14 SOLAR ENERGY↗

A-site occupancy effects on structure, ionic conductivity, and thermodynamic stability of KxMgx/2Ti8−x/2O16

Abstract K x Mg x /2 Ti 8− x /2 O 16 (1.54 ≤ x ≤ 2) hollandite samples synthesized using a conventional solid-state route were used to investigate the effect of structure, ionic conductivity, and thermodynamic stability as a function of A-site (K) occupancy. The ionic conductivity, as measured using AC impedance spectroscopy, decreased as the A-site occupancy (and K content) increased. Titanate hollandite, of the form K x Mg x /2 Ti 8− x /2 O 16 , was measured using high-temperature oxide melt solution calorimetry in sodium molybdate (3Na 2 O $$\bullet$$ ∙ 4MoO 3 ) solvent at 804 $$^\circ{\rm C}$$ ∘ C . The enthalpies of formation are strongly exothermic indicating that they are thermodynamically stable relative to their constituent oxides. Previous studies have demonstrated increased stability with an increase in Cs content at fixed A-site occupancy. This work demonstrated an increase in the stability for the K-bearing hollandite samples with an increase in K content and tunnel occupancy. The measured enthalpies of formation (∆ H f,ox ) were in good agreement with density functional theory (DFT) predictions. Graphical abstract

Cassell, Nakeshma S.↗

Hardtack II

Armed and ready to fire, Adams remained suspended under a balloon high over the Nevada Test Site throughout the day and night of October 31, 1958. Shortly after midnight, Adams was lowered to the ground and disarmed. With that, Operation Hardtack II ended and a test moratorium, primarily a gentlemen’s agreement between the United States and the Soviet Union, took effect. As the possibility of a moratorium became more and more likely in late 1957, the Atomic Energy Commission and its two weapon laboratories sought Presidential approval for an unprecedented number of tests for the coming year, including a proposal by the UCRL for a series of underground and safety tests in an operation called Millrace. Not wanting to jeopardize ongoing international disarmament talks as well as the moratorium, itself, Eisenhower resisted giving approval for Millrace until late August 1958, barely two months before the anticipated start of the moratorium. Millrace, quickly renamed Hardtack II, was expanded to thirty-seven tests beginning with Otero on September 12 th and concluding with Titania on October 30 th . Eighteen devices, including Otero and Titania, were safety tests. Three of these tests explored “safety characteristics for underground detonations” in tunnels. Two of the three such tests vented. In this respect, Hardtack II was a harbinger of the future in that the problem of venting was never fully resolved. Other safety tests, designed to give no yield, were more successful with San Juan, Oberon, and Ganymede having “no measurable yield.”

45 MILITARY TECHNOLOGY, WEAPONRY, AND NATIONAL DEF↗

Quasiparticle Interference in Kitaev Quantum Spin Liquids

We study quasiparticle interference (QPI) in the Kitaev quantum spin liquid (QSL) for electrons tunneling into the QSL. The local tunneling conductance around a spin vacancy or localized vison reveals unique features associated with fractionalized Majorana fermions, chargons, and visons. In certain parameter regimes, the single-spinon density of states and momentum dispersion can both be directly extracted from the tunneling conductance. In conclusion, our results suggest that QPI is a promising tool for identifying the Kitaev QSL and its fractionalized excitations.

Anyons↗

Using Molecular Structure to Tune Intrachain and Interchain Charge Transport in Indacenodithiophene-Based Copolymers

Here, in this work, we compare two structurally near-amorphous rigid-rod polymers-poly(indacenodithiophene-co-benzothiadiazole), p(IDT-BT), and poly(indacenodithiophene-co-benzopyrollodione), p(IDT-BPD)-with orders of magnitude different mobilities to understand the effect charge carrier intrachain delocalization has on electronic transport. Quantum chemical calculations show that p(IDT-BPD) has a barrier to torsion that is significantly lower than that of p(IDT-BT) and is thus more likely to have reduced conjugation lengths. We utilize absorption and photoluminescence spectroscopy to characterize energetic disorder and show that p(IDT-BPD) has higher energetic disorder. Charge modulation spectroscopy (CMS) and model calculations are used to show that charge carriers are substantially delocalized in p(IDT-BT) and occupy near-uniform energetic environments. We find that mobility activated hopping barriers are similar in these two materials. Electronic structure calculations show that both intrachain and interchain couplings of monomer units are poor enough in p(IDT-BPD) that charge carriers collapse to single IDT units and transport via a through-space tunneling mechanism. This work highlights the remarkable charge transport properties of p(IDT-BT) by showing that high mobilities are achievable on device-relevant length scales with only 1D carrier delocalization.

36 MATERIALS SCIENCE↗

Co-deposition of bismuth-nitrogen films on MgO (001) by molecular beam epitaxy

Here, we attempted to grow a thin film of BiN by co-deposition of bismuth and nitrogen on rock-salt structure MgO (001) substrates. Furthermore, we studied the effect of variation of the growth temperature and the nitrogen to bismuth flux ratios on sample growth. For the samples grown and conditions used, we do not find strong evidence for the formation of a bulk Bi-N alloy. Even for very high nitrogen to bismuth flux ratio, we observed only bismuth and no nitrogen using bulk Rutherford back-scattering spectroscopy measurements, and only 1%–2% nitrogen was seen through surface Auger electron spectroscopy measurements. The in-plane lattice measurements show that the resulting Bi (110) samples are strained, which is presumably caused by lattice mismatch between the sample and the substrate when grown without any buffer layer. The use of a high-temperature buffer layer helps to release strain in the sample but only along one axis. Measurements of the atomic layer spacing using x-ray diffraction and also scanning tunneling microscopy confirm the Bi (110) thin film sample structure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Surpassing millisecond coherence in on chip superconducting quantum memories by optimizing materials and circuit design

The performance of superconducting quantum circuits for quantum computing has advanced tremendously in recent decades; however, a comprehensive understanding of relaxation mechanisms does not yet exist. In this work, we utilize a multimode approach to characterizing energy losses in superconducting quantum circuits, with the goals of predicting device performance and improving coherence through materials, process, and circuit design optimization. Using this approach, we measure significant reductions in surface and bulk dielectric losses by employing a tantalum-based materials platform and annealed sapphire substrates. With this knowledge we predict the relaxation times of aluminum- and tantalum-based transmon qubits, and find that they are consistent with experimental results. We additionally optimize device geometry to maximize coherence within a coaxial tunnel architecture, and realize on-chip quantum memories with single-photon Ramsey times of 2.0 – 2.7 ms, limited by their energy relaxation times of 1.0 – 1.4 ms. These results demonstrate an advancement towards a more modular and compact coaxial circuit architecture for bosonic qubits with reproducibly high coherence.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

High-Throughput In-Line Deposition of Silicon Oxide for Polycrystalline Silicon Passivating Contacts

Polycrystalline silicon passivating contacts rely on an ultrathin (1–2 nm) silicon oxide layer to minimize recombination at the wafer/oxide interface and regulate dopant diffusion. Traditionally formed by thermal or chemical oxidation, this oxide is herein replaced by silicon oxide deposited via aerosol impact-driven assembly (AIDA), enabling high wafer-per-hour throughput and precise thickness control. In this study, we show that AIDA coatings conformally cover planar or textured substrates and achieve a SiO x /poly-Si(n) structure with an implied open-circuit voltage (iV oc = 726 mV) and contact saturation current density (J 0 = 8.8 fA/cm 2 ). Furthermore, annealing AIDA SiO x films at elevated temperatures desorbs hydroxyl groups while the stoichiometry transitions toward SiO 2 , improving passivation quality. Together, these results highlight AIDA’s potential for scalable, high-throughput manufacturing of advanced passivating contacts, offering a cost-effective alternative to conventional low-pressure chemical vapor deposition and plasma-enhanced chemical vapor deposition-based silicon and oxide processes.

TOPcon↗