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DOE OSTI2024

Characterization of EJ-270 and Ce-doped LiCAF scintillators for the development of high-rate neutron reflectometer detectors

The Second Target Station of the Spallation Neutron Source at Oak Ridge National Laboratory is anticipated to provide a neutron source with ∼20 times increase in peak brightness than the First Target Station. The neutron reflectometers currently in operation at the First Target Station need to be upgraded due to the increased neutron flux. A prototype neutron detector module based upon a pixelated scintillator array readout by silicon photomultipliers is being developed to address the high-rate challenge faced with future neutron reflectometer instruments at the Second Target Station. Two types of scintillator materials were considered for this detector development, i.e., 6 Li-loaded EJ-270 plastic scintillator and Ce-doped LiCAF single crystal. This paper reports the scintillator characterization results, including light yield, pulse shape discrimination performance, capability to detect thermal neutrons in a high γ-ray field, and γ-ray sensitivity. The number of photons produced per neutron capture by EJ-270 and LiCAF:Ce was measured to be 2176 ± 91 and 2651 ± 108, respectively. EJ-270 demonstrated a good capability to discriminate between neutrons and γ-rays by employing the commonly used charge comparison method (figure-of-merit: 1.13 ± 0.01 for an energy cut of 292–426 keVee) and a reasonable performance when using the time-over-threshold techniques; however, no discrimination was observed from LiCAF:Ce regardless of the pulse shape discrimination approaches utilized, making pulse height discrimination necessary for LiCAF:Ce to differentiate between neutrons and γ-rays. Both EJ-270 and LiCAF:Ce exhibited an acceptable capacity to detect thermal neutrons at high exposure rates up to approximately 584 mR/h. Furthermore, the γ-ray sensitivities measured with a 60 Co source at an exposure rate of around 1145 mR/h were determined to be (6.11 ± 0.87) × 10 −6 and (7.64 ± 1.08) × 10 −7 for EJ-270 and LiCAF:Ce, respectively.

EJ-270↗

DOE OSTI2024

Kinetic Inductance Phonon-Mediated Detectors for Dark Matter: R&D at NEXUS

Superconducting thin films have long been used as phonon sensors, particularly in the field of dark matter (DM) direct detection, due to the meV-scale Cooper-pair binding energy. A novel class of these detectors based on microwave kinetic inductance detectors, dubbed Kinetic Inductance Phonon-Mediated Detectors (KIPMDs), offers an attractive architecture for microcalorimeters to probe DM down to the fermionic thermal relic mass limit of a few keV. Such a device featuring an aluminum resonator patterned onto a silicon substrate was operated at the NEXUS low-background facility at Fermilab for characterization and evaluation of its efficacy for a dark matter search. With this device we have demonstrated a resolution on the energy absorbed by the superconductor of 2.5 eV, a factor of two better than current state-of-the-art. In this talk, I will present our measurement of the energy resolution and phonon collection efficiency performed by exposing the bare substrate to a pulsed source of 470 nm photons. I will also discuss the path forward to obtaining in these devices the sub-eV resolution required to test the “Freeze-in” class of DM models. Finally, I will review other complementary efforts in our group to develop a superconducting qubit-based low-threshold detector.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2023

The beam test of the lead tungstate calorimeter prototype with SiPM readout at Jefferson Lab

The lead tungstate crystals (PWO4) are a well-known radiator material for precise homogeneous electromagnetic calorimetry. In nuclear physics experiments, the typical way to read out the crystals is using conventional photomultiplier tubes (PMTs). In the case of the presence of a magnetic field, such a method has some complications and requires a passive PMT shielding design. The recent development of Silicon Photomultipliers (SiPMs) with small pixel pitch sizes and relatively small noise levels opens an opportunity avenue to use such a device as an alternative to conventional PMTs. The SiPM readout method may be beneficial for future nuclear physics and collider experiments. We are presenting the beam test results of the calorimeter prototype instrumented with SiPM readout performed at Jefferson Lab. The SiPM readout performance was compared with PMT readout measured at the same experimental conditions. The prototype was successfully tested using beam of photons in the energy range between 3 GeV and 11 GeV in experimental Hall D. The detector performance was also studied using a secondary beam of positrons provided by Hall D pair spectrometer.

Berdnikov, Vladimir↗

NASA NTRS1974

Detection of the J = 1 to 0 rotational transition of vibrationally excited silicon monoxide

The v = 1,J = 1 to 0 rotational transition of SiO at 43.1 GHz has been detected in the direction of Becklin's star in the Orion Nebula, and in the M-type star W Hya. In Orion two velocity components are observed, one (the stronger) at a radial velocity of 17 km/sec, the other at -7 km/sec; in W Hya a single line is observed at 39 km/sec. In each case a line at the same radial velocity has been observed at 86.2 GHz in the v = 1,J = 2 to 1 transition, so that the presence of vibrationally excited SiO would seem to be confirmed beyond a reasonable doubt. In the v = 1 state, the photon fluxes of the J = 2 to 1 and 1 to 0 transitions are about equal, suggesting saturated masers occupying the same region of space.

Thaddeus, P.↗

NASA NTRS1990

Word timing recovery in direct detection optical PPM communication systems with avalanche photodiodes using a phase lock loop

A technique for word timing recovery in a direct-detection optical PPM communication system is described. It tracks on back-to-back pulse pairs in the received random PPM data sequences with the use of a phase locked loop. The experimental system consisted of an 833-nm AlGaAs laser diode transmitter and a silicon avalanche photodiode photodetector, and it used Q = 4 PPM signaling at source data rate 25 Mb/s. The mathematical model developed to describe system performance is shown to be in good agreement with the experimental measurements. Use of this recovered PPM word clock with a slot clock recovery system caused no measurable penalty in receiver sensitivity. The completely self-synchronized receiver was capable of acquiring and maintaining both slot and word synchronizations for input optical signal levels as low as 20 average detected photons per information bit. The receiver achieved a bit error probability of 10 to the -6th at less than 60 average detected photons per information bit.

Sun, Xiaoli↗

DOE OSTI2025

Design and Construction of a High-Resolution Hodoscope for the GlueX Experiment with High-Statistics Analysis of the p0, ¿, and ¿1 Photoproduction Cross Sections from the RadPhi Experiment

Differential cross sections for forward-angle photoproduction of p0, ¿, and ¿ 1 pseudoscalar mesons were measured using data from the RadPhi experiment conducted in Hall B at Jef ferson Lab. RadPhi utilized a tagged bremsstrahlung photon beam incident on a stationary 9Be target, with a detector system configured to trigger on a recoil proton in coincidence with multiple neutral showers in the calorimeter. Events were reconstructed and subjected to kinematic constraints, with background suppressed via sideband subtraction guided by Monte Carlo modeling of background contributions. Cross sections were extracted over the photon energy range 4.4– 5.4 GeV and binned in invariant momentum transfer t, providing measurements from one of the first high-statistics experiments of forward ¿ and ¿1 pro duction from a nuclear target at these energies. Acceptance corrections were applied using a detailed GEANT-based simulation of the detector geometry and response. The resulting cross sections are consistent with 2020 CLAS results, when scaled by the number of protons in beryllium, and show broad agreement with other data and theoretical models. In parallel, a high-resolution photon tagger detector, the Tagger Microscope (TAGM), was designed, constructed, and commissioned for the GlueX experiment in Hall D at Jefferson Lab. The TAGM was developed to provide high-rate tagging capability in the coherent bremsstrahlung peak by detecting post-bremsstrahlung electrons across a one GeV range along the focal plane of the tagging spectrometer. The detector consists of a 5ˆ102 array of 2ˆ2 mm2 square BCF-20 plastic scintillating fibers thermally fused to BCF-98 light guide fibers optically coupled to silicon photomultipliers. These fibers are mounted in a precision machined framework enabling fine positional adjustments to maintain precise alignment with post-bremsstrahlung electron trajectories, while ensuring mechanical rigidity, thermal stability, optical isolation, minimal inactive area, and radiation shielding for electronics. The construction effort involved extensive testing of fiber quality, light transmission, thermal fusing, radiation hardness, and defect analysis using SEM and EDX techniques. Following its installation and commissioning, the TAGM became a critical component of the GlueX beamline, enabling high-rate tagging essential for studies of hybrid mesons and gluonic ex citations.

McIntyre, James [Univ. of Connecticut, Storrs, CT ↗

DOE OSTI2024

Strain-concentration for fast, compact photonic modulation and non-volatile memory

A critical figure of merit (FoM) for electro-optic (EO) modulators is the transmission change per voltage, d T / d V . Conventional approaches in wave-guided modulators maximize d T / d V via a high EO coefficient or longer light-material interaction lengths but are ultimately limited by material losses and nonlinearities. Optical and RF resonances improve d T / d V at the cost of spectral non-uniformity, especially for high- Q optical cavity resonances. Here, we introduce an EO modulator based on piezo-strain-concentration of a photonic crystal cavity to address both trade-offs: (i) it eliminates the trade-off between d T / d V and waveguide loss—i.e., enhancement of the resonance tuning efficiency d v c / d V for the fixed EO coefficient, waveguide length, and cavity Q —and (ii) at high DC strains it exhibits a non-volatile (NV) cavity tuning Δ v c ,NV for passive memory and programming of multiple devices into resonance despite fabrication variations. The device is fabricated on a scalable silicon nitride-on-aluminum nitride platform. We measure d v c / d V =177±1MHz/V, corresponding to Δ v c =40±0.32GHz for a voltage spanning ±120V with an energy consumption of δ U /Δ v c =0.17nW/GHz. The modulation bandwidth is flat up to ω BW,3dB /2 π =3.2±0.07MHz for broadband DC-AC and 142±17MHz for resonant operation near a 2.8 GHz mechanical resonance. Optical extinction up to 25 dB is obtained via Fano-type interference. Strain-induced beam-buckling modes are programmable under a “read-write” protocol with a continuous, repeatable tuning range of 5±0.25GHz, allowing for storage and retrieval, which we quantify with mutual information of 2.4 bits and a maximum non-volatile excursion of 8 GHz. Using a full piezo-optical finite-element-model (FEM) we identify key design principles for optimizing strain-based modulators and chart a path towards achieving performance comparable to lithium niobate-based modulators and the study of high strain physics on-chip.

Wen, Y. Henry (ORCID:0009000685423628)↗

NASA NTRS2001

Laboratory characterization of silicon avalanche photodiodes (APD) for pulse position modulation (PPM) detection

Two commercially available large area silicon avalanche photodiodes (APD) were characterized in the laboratory. Specifically, the response of the APD’s to a sequence of 8-bit pulse position modulated (256-PPM) laser pulses, with and without background noise, was recorded and stored for post analysis. Empirical probability distribution functions (pdf) were constructed from the signal and noise slot data and compared to pdf’s predicted by an analytical model based on Webb/Gaussian statistics. The limited pulse sequence was also used to generate bit-error rate (BER) versus signal photons per pulse values, albeit with large error bars. These BER measurements were also compared to results predicted using the Gaussian and Webb/Gaussian models for APD channel statistics. While the measurements qualitatively reflect features predicted by theory, significant quantitative deviations are displayed between the measurements and theory. The source of these discrepancies is not currently well understood, but it is surmised that inaccurate knowledge of detector parameters such as gain and noise equivalent temperature models may explain the discrepancies.

Biswas, A.↗

DOE OSTI2021

Final Report for Grant

This is the final report for this project. The major objectives were to develop full models and standard cells of CMOS silicon photomultipliers (SiPM) for neutron detection applications. Specifically, the research seeks to replace photomultiplier tubes, used in neutron detection applications, with SiPMs containing integrated readout electronics fabricated in standard CMOS processes. The detectors improve on the detection efficiency, readout speed, resolution (sensitivity), and spatial resolution of current systems. In particular, this work involved collaboration with the instrument and detector group at ORNL who build detectors based on discrete commercially available PMTs and SiPMs. The SiPM detectors developed in this work are based on Perimeter Gated Single Photon Avalanche Diodes (PGSPAD). These devices have tunable breakdown voltage which affects other performance characteristics of the detectors. The ability of the detectors to have integrated readout and tune the noise floor and dynamic range in addition to offering a method for non-uniformity compensation in a compact form significantly impacts the imaging research field and includes the nuclear sciences field, circuits and systems field in addition to varied fields such as geography and biology/medicine.

42 ENGINEERING↗

DOE OSTI2022

Coupled surface plasmon–phonon polariton nanocavity arrays for enhanced mid-infrared absorption

Abstract Resonant optical cavities are essential components in mid-infrared applications. However, typical film-type cavities require multilayer stacks with a micron-thick spacer due to mid-infrared wavelengths, and their performance is limited by narrow frequency tunability and angular sensitivity. We propose and experimentally demonstrate the subwavelength-scale (≈ λ 0 /150) resonant nanocavity arrays that enhance the absorption spectrum of the device in the mid-infrared (10–12 microns) via excitation of coupled surface plasmon–phonon polaritons. The proposed metal–insulator–polar dielectric (gold–silicon–silicon carbide) structure supports a guided mode of the coupled surface polaritons in the lateral direction while vertically confining the mid-infrared wave within the 80 nm thick dielectric spacer. In particular, the subwavelength-scale (≈ λ 0 /10) gratings are imposed to form Fabry–Pérot cavity arrays displaying angle-insensitive and frequency-tunable absorption of up to 80% of the optical power in the mid-infrared. Our work should benefit diverse mid-infrared applications and novel designs of polariton-based photonic devices.

42 ENGINEERING↗

NASA NTRS1994

Si 1-X Ge X /Si Heterojunction Internal Photoemission Long Wavelength Infrared Detector

Long wavelength Si 1-X Ge X /Si heterojunction internal photoemission (HIP) infrared detectors have been successfully demonstrated utilizing the growth of degenerately boron doped Si 1-X Ge X layers on Si. Recently, Si 0.7 GE 0.3 /SI HIP detectors with either a Si 1-X Ge X single layer or a Si 1-X Ge X /Si multilayer have been demonstrated with cutoff wavelengths out to 23 µm. Near-ideal thermionic emission dark current characteristics were measured and the electrical potential barriers were determined by the Richardson plot. A photoresponse model, similar to the modified Fowler Equation has been developed for the Si 1-X Ge X /Si heterojunction internal photoemission infrared detector at wavelengths corresponding to photon energies less than the Fermi energy. The optical potential barriers, the corresponding cutoff wavelengths, and the emission coefficients, C 1 , for the HIP detectors have been determined from the measured spectral responses using the photoresponse model. Similar optical and thermal potential barriers were obtained.

infrared↗

NASA NTRS1975

Self-scanned Digicon - A digital image tube for astronomical spectroscopy

We have successfully fabricated, tested, and operated a digital image tube consisting of a magnetically focused image intensifier tube in which a self-scanned linear array of 1024 silicon photodiodes operating in the EBS mode serves as the photoelectron image detector, amplifier, and intermediate image storage device. Integral on-chip MOS shift registers driven by an external clock sequentially interrogate the photodiodes through MOS FET multiplex switch arrays. Each output frame is a sequence of 256 analog pulses on each of four video lines. Laboratory and observing tests show that the output signal is photoelectron shot noise limited over at least a range of 1-100,000 detected photoelectrons per picture element, indicating that single photon detection is achieved. High-resolution astronomical spectroscopy has been carried out in the coude spectrograph of the 2.7-m telescope at McDonald Observatory. Examples are shown.

Tull, R. G.↗

DOE OSTI2021

Ultra-high extinction ratio polarization beam splitter with extreme skin-depth waveguide

In this Letter, we present a high extinction ratio and compact on-chip polarization beam splitter (PBS), based on an extreme skin-depth (eskid) waveguide. Subwavelength-scale gratings form an effectively anisotropic metamaterial cladding and introduce a large birefringence. The anisotropic dielectric perturbation of the metamaterial cladding suppresses the TE polarization extinction via exceptional coupling, while the large birefringence efficiently cross-couples the TM mode, thus reducing the coupling length. We demonstrated the eskid-PBS on a silicon-on-insulator platform and achieved an ultra-high extinction ratio PBS ( ≈ <#comment/> 60 d B for TE and ≈ <#comment/> 48 d B for TM) with a compact coupling length ( ≈ <#comment/> 14.5 µ <#comment/> m ). The insertion loss is also negligible ( < <#comment/> 0.6 d B ). The bandwidth is > <#comment/> 80 (30) nm for the TE (TM) extinction ratio > <#comment/> 20 d B . Our ultra-high extinction ratio PBS is crucial in implementing efficient polarization diversity circuits, especially where a high degree of polarization distinguishability is necessary, such as photonic quantum information processing.

Ahmed, Syed Z.↗

DOE OSTI2022

Enhanced Surface Passivation by Atomic Layer Deposited Al 2 O 3 for Ultraviolet Sensitive Silicon Photomultipliers

Here, we describe a superior passivation of p-type (p + ) Si surface by Al 2 O 3 thin film that is synthesized by plasma-assisted atomic layer deposition for ultraviolet sensitive silicon photomultipliers (SiPM), compared to conventional SiO 2 and SiN x passivation schemes. The superiority of Al 2 O 3 passivation is due to not only a sufficiently low interface defect density but also a high density of built-in negative charges. A 7 nm thin Al 2 O 3 film can yield an emitter saturation current density of ~8 fA/cm 2 on high sheet resistance p + layer, compared to ~60 and ~1480 fA/cm 2 for thermal SiO 2 and SiN x passivation. This superior surface passivation allows the photon-generated carriers to have higher probabilities to reach the high-field region to trigger an avalanche event. In addition, Al 2 O 3 thin film provides very low values of effective surface recombination velocity on low resistivity n-type and p-type Si surfaces, which can lead to well-passivated surface features on guard ring and trench isolation regions of SiPM. These demonstrate the potential of Al 2 O 3 thin film passivation to improve quantum efficiency and thus photo-detection efficiency of ultraviolet sensitive SiPM with p + /n - /n/n + structure.

36 MATERIALS SCIENCE↗

NASA NTRS1988

Optical communication with semiconductor laser diodes

Slot timing recovery in a direct detection optical PPM communication system can be achieved by processing the photodetector waveform with a nonlinear device whose output forms the input to a phase lock group. The choice of a simple transition detector as the nonlinearity is shown to give satisfactory synchronization performance. The rms phase error of the recovered slot clock and the effect of slot timing jitter on the bit error probability were directly measured. The experimental system consisted of an AlGaAs laser diode (lambda = 834 nm) and a silicon avalanche photodiode (APD) photodetector and used Q=4 PPM signaling operated at a source data rate of 25 megabits/second. The mathematical model developed to characterize system performance is shown to be in good agreement with actual performance measurements. The use of the recovered slot clock in the receiver resulted in no degradation in receiver sensitivity compared to a system with perfect slot timing. The system achieved a bit error probability of 10 to the minus 6 power at received signal energies corresponding to an average of less than 60 detected photons per information bit.

Davidson, F.↗

DOE OSTI2024

Performance analysis of photodetectors based on 2D materials and heterostructures

The unprecedented demand for sophisticated, self-powered, compact, ultrafast, cost-effective, and broadband light sensors for a myriad of applications has spurred a lot of research, precipitating in a slew of studies over the last decade. Apart from the photosensing ability of an active element in the light sensor, the device architecture is crucial in terms of photoinduced charge carrier generation and separation. Since the inception of graphene and the subsequent research growth in the atomically thin 2D materials, researchers have developed and adapted different families of 2D materials and device architectures, including single element 2D, 0D/2D, 2D/2D, 1D/2D stacked structures, and so on. Here this review discusses the recent reports on the light-sensing properties of various 2D materials, their heterostructures, and characteristics applicable to the ultraviolet-near infrared (UV-NIR), short-wave IR (SWIR), mid-wave IR (MWIR), long-wave IR (LWIR), and terahertz (THz) spectral ranges. It highlights the novelty of the burgeoning field, the heightened activity at the boundaries of engineering and materials science, particularly in the generation of charge carriers, their separation, and extraction, and the increased understanding of the underpinning science through modern experimental approaches. Devices based on the simultaneous effects of the pyro-phototronic effect (PPE) and the localized surface plasmon resonance (LSPR) effect, the photothermoelectric effect (PTE)-assisted photodetectors (PDs), waveguide-integrated silicon-2D PDs, metal-2D-metal PDs, and organic material PDs are examined rigorously. Theoretical treatment utilizing various computational approaches to investigate 2D materials and heterostructures for photodetection applications is also briefly discussed. At the end, current challenges and solutions to enhance the figures of merit of photodetectors are proposed.

2D transition metal chalcogenides↗

NASA NTRS1995

Fine Pitch Grids for an X-Ray Solar Imaging Spectrometer Fabricated by Optical Lithography and XeF2 Etching

Fine-pitch, sub-collimating X-ray grids have been developed for an instrument in the High Energy Solar Spectroscopic Imager , a proposed NASA mission. In addition to high-energy x- rays, the instrument requires collimation of photons with energies of less than 4 keV such that free-standing grids are required that have no material between the grid slats. Fabrication of these grids is described.

x-ray↗

NASA NTRS2004

Self Assembled Structures by Directional Solidification of Eutectics

Interest in ordered porous structures has grown because of there unique properties such as photonic bandgaps, high backing packing density and high surface to volume ratio. Inspired by nature, biometric strategies using self assembled organic molecules dominate the development of hierarchical inorganic structures. Directional solidification of eutectics (DSE) also exhibit self assembly characteristics to form hierarchical metallic and inorganic structures. Crystallization of diphasic materials by DSE can produce two dimensional ordered structures consisting of rods or lamella. By selective removal of phases, DSE is capable to fabricate ordered pore arrays or ordered pin arrays. Criteria and limitations to fabricate hierarchical structures will be presented. Porous structures in silicon base alloys and ceramic systems will be reported.

Dynys, Frederick W.↗