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568 records · Page 32

Factors influencing quantum evaporation of helium from polar semiconductors from first principles

While there is much indirect evidence for the existence of dark matter (DM), to date it has evaded detection. Current efforts focus on DM masses over ~GeV—to push the sensitivity of DM searches to lower masses, new DM targets and detection schemes are needed. In this work, we focus on the latter—a novel detection scheme recently proposed to detect 10–100 meV phonons in polar target materials. Previous work showed that well-motivated models of DM can interact with polar semiconductors to produce an athermal population of phonons. This new sensing scheme proposes that these phonons then facilitate quantum evaporation of 3 He from a van der Waals film deposited on the target material. However, a fundamental understanding of the underlying process is still unclear, with several uncertainties related to the precise rate of evaporation and how it can be controlled. In this work, we use ab initio density functional theory calculations to compare the adsorption energies of helium atoms on a polar target material, sodium iodide, to understand the underlying evaporation physics. We explore the role of surface termination, monolayer coverage, and elemental species on the rate of He evaporation from the target material. Using this, we discuss the optimal target features for He-evaporation experiments and their range of tunability through chemical and physical modifications such as applied field and surface termination.

36 MATERIALS SCIENCE↗

CMOS Imager Has Better Cross-Talk and Full-Well Performance

A complementary metal oxide/semiconductor (CMOS) image detector now undergoing development is designed to exhibit less cross-talk and greater full-well capacity than do prior CMOS image detectors of the same type. Imagers of the type in question are designed to operate from low-voltage power supplies and are fabricated by processes that yield device features having dimensions in the deep submicron range. Because of the use of low supply potentials, maximum internal electric fields and depletion widths are correspondingly limited. In turn, these limitations are responsible for increases in cross-talk and decreases in charge-handling capacities. Moreover, for small pixels, lateral depletion cannot be extended. These adverse effects are even more accentuated in a back-illuminated CMOS imager, in which photogenerated charge carriers must travel across the entire thickness of the device. The figure shows a partial cross section of the structure in the device layer of the present developmental CMOS imager. (In a practical imager, the device layer would sit atop either a heavily doped silicon substrate or a thin silicon oxide layer on a silicon substrate, not shown here.) The imager chip is divided into two areas: area C, which contains readout circuits and other electronic circuits; and area I, which contains the imaging (photodetector and photogenerated-charge-collecting) pixel structures. Areas C and I are electrically isolated from each other by means of a trench filled with silicon oxide. The electrical isolation between areas C and I makes it possible to apply different supply potentials to these areas, thereby enabling optimization of the supply potential and associated design features for each area. More specifically, metal oxide semiconductor field-effect transistors (MOSFETs) that are typically included in CMOS imagers now reside in area C and can remain unchanged from established designs and operated at supply potentials prescribed for those designs, while the dopings and the lower supply potentials in area I can be tailored to optimize imager performance. In area I, the device layer includes an n+ -doped silicon layer on which is grown an n-doped silicon layer. A p-doped silicon layer is grown on top of the n -doped layer. The total imaging device thickness is the sum of the thickness of the n+, n, and p layers. A pixel photodiode is formed between a surface n+ implant, a p implant underneath it, the aforementioned p layer, and the n and n+ layers. Adjacent to the diode is a gate for transferring photogenerated charges out of the photodiode and into a floating diffusion formed by an implanted p+ layer on an implanted n-doped region. Metal contact pads are added to the back-side for providing back-side bias.

Pain, Bedabrata↗

Multiple-Event, Single-Photon Counting Imaging Sensor

The single-photon counting imaging sensor is typically an array of silicon Geiger-mode avalanche photodiodes that are monolithically integrated with CMOS (complementary metal oxide semiconductor) readout, signal processing, and addressing circuits located in each pixel and the peripheral area of the chip. The major problem is its single-event method for photon count number registration. A single-event single-photon counting imaging array only allows registration of up to one photon count in each of its pixels during a frame time, i.e., the interval between two successive pixel reset operations. Since the frame time can t be too short, this will lead to very low dynamic range and make the sensor merely useful for very low flux environments. The second problem of the prior technique is a limited fill factor resulting from consumption of chip area by the monolithically integrated CMOS readout in pixels. The resulting low photon collection efficiency will substantially ruin any benefit gained from the very sensitive single-photon counting detection. The single-photon counting imaging sensor developed in this work has a novel multiple-event architecture, which allows each of its pixels to register as more than one million (or more) photon-counting events during a frame time. Because of a consequently boosted dynamic range, the imaging array of the invention is capable of performing single-photon counting under ultra-low light through high-flux environments. On the other hand, since the multiple-event architecture is implemented in a hybrid structure, back-illumination and close-to-unity fill factor can be realized, and maximized quantum efficiency can also be achieved in the detector array.

Zheng, Xinyu↗

Map of the Zintl AM 2 Pn 2 Compounds: Influence of Chemistry on Stability and Electronic Structure

The AM 2 Pn 2 (A= Ca, Sr, Ba, Yb, Mg; M = Zn, Cd, Mg; and Pn = N, P, As, Sb, Bi) family of Zintl phases has been known as thermoelectric materials and has recently gained much attention for highly promising materials for solar absorbers in single-junction and tandem solar cells. In this paper, we will, from first principles, explore the entire family of AM 2 Pn 2 compounds in terms of their ground-state structure, thermodynamic stability, and electronic structure. We also perform photoluminescence spectroscopy on bulk powder and thin film samples to verify our results, including the first measurements of the band gaps of SrCd 2 P 2 and CaCd 2 P 2 . The AM 2 Pn 2 compounds exhibit broad stability, are mostly isostructural to CaAl 2 Si 2 (P$\overline{3}$m1), and cover a wide range of band gaps from 0 to beyond 3 eV. This could make them useful for a variety of purposes, for which we propose several candidates, such as CaZn 2 N 2 for tandem top cell solar absorbers and SrCd 2 Sb 2 and CaZn 2 Sb 2 for infrared detectors. By examining the band structures of the AM 2 Pn 2 , we find that Mg 3 Sb 2 has the most promise as a thermoelectric material due to several off-Γ valence band pockets, which are unique to it among the compositions studied here.

14 SOLAR ENERGY↗

Rugged, Portable, Real-Time Optical Gaseous Analyzer for Hydrogen Fluoride

Hydrogen fluoride (HF) is a primary evolved combustion product of fluorinated and perfluorinated hydrocarbons. HF is produced during combustion by the presence of impurities and hydrogen- containing polymers including polyimides. This effect is especially dangerous in closed occupied volumes like spacecraft and submarines. In these systems, combinations of perfluorinated hydrocarbons and polyimides are used for insulating wiring. HF is both highly toxic and short-lived in closed environments due to its reactivity. The high reactivity also makes HF sampling problematic. An infrared optical sensor can detect promptly evolving HF with minimal sampling requirements, while providing both high sensitivity and high specificity. A rugged optical path length enhancement architecture enables both high HF sensitivity and rapid environmental sampling with minimal gaseous contact with the low-reactivity sensor surfaces. The inert optical sample cell, combined with infrared semiconductor lasers, is joined with an analog and digital electronic control architecture that allows for ruggedness and compactness. The combination provides both portability and battery operation on a simple camcorder battery for up to eight hours. Optical detection of gaseous HF is confounded by the need for rapid sampling with minimal contact between the sensor and the environmental sample. A sensor is required that must simultaneously provide the required sub-parts-permillion detection limits, but with the high specificity and selectivity expected of optical absorption techniques. It should also be rugged and compact for compatibility with operation onboard spacecraft and submarines. A new optical cell has been developed for which environmental sampling is accomplished by simply traversing the few mm-thick cell walls into an open volume where the measurement is made. A small, low-power fan or vacuum pump may be used to push or pull the gaseous sample into the sample volume for a response time of a few seconds. The optical cell simultaneously provides for an enhanced optical interaction path length between the environmental sample and the infrared laser. Further, the optical cell itself is comprised of inert materials that render it immune to attack by HF. In some cases, the sensor may be configured so that the optoelectronic devices themselves are protected and isolated from HF by the optical cell. The optical sample cell is combined with custom-developed analog and digital control electronics that provide rugged, compact operation on a platform that can run on a camcorder battery. The sensor is inert with respect to acidic gases like HF, while providing the required sensitivity, selectivity, and response time. Certain types of combustion events evolve copious amounts of HF, very little of other gases typically associated with combustion (e.g., carbon monoxide), and very low levels of aerosols and particulates (which confound traditional smoke detectors). The new sensor platform could warn occupants early enough to take the necessary countermeasures.

Pilgrim, Jeffrey↗

Cooling and Timing Tests of the ATLAS Fast TracKer VME Boards

The Fast TracKer (FTK) is an ATLAS trigger upgrade built for full-event, low-latency, high-rate tracking. The FTK core, made of 9U VME boards, performs the most demanding computational task. The associative memory board (AMB) serial link processor and the auxiliary card (AUX), plugged on the front and back sides of the same VME slot, constitute the processing unit (PU), which finds tracks using hits from eight layers of the inner detector. The PU works in pipeline with the second stage board (SSB), which finds 12-layer tracks by adding extra hits to the identified tracks. In the designed configuration, 16 PUs and four SSBs are installed in a VME crate. The high power consumption of the AMB, AUX, and SSB (respectively, of about 250, 70, and 160 W per board) required the development of a custom cooling system. Even though the expected power consumption for each VME crate of the FTK system is high compared with a common VME setup, the 8 FTK core crates will use ≈60 kW, which is just a fraction of the power and the space needed for a CPU farm performing the same task. We report on the integration of 32 PUs and eight SSBs inside the FTK system, on the infrastructures needed to run and cool them, and on the tests performed to verify the system processing rate and the temperature stability at a safe value.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

On optical properties and scintillation performance of emerging Ga 2 O 3 : Crystal growth, emission mechanisms and doping strategies

As an emerging ultra-wide bandgap compound semiconductor, Ga 2 O 3 has attracted rapidly growing interest due to its unique physical properties for harsh condition applications. Compared to Ga 2 O 3 ’s electrical-characteristic based uses, such as power electronics, photodetectors and solar cells, a much less explored area for Ga 2 O 3 is its promising optical properties and its related scintillation capabilities. Undoped Ga 2 O 3 is a strong scintillator with excellent scintillation characteristics such as fast decay constants and encouraging light yield which is comparable to that of the classic Bi 4 Ge 3 O 12 (BGO) scintillator. The scintillation capability of Ga 2 O 3 can be precisely tuned via a series of approaches including systematic crystal growth control, post-growth annealing, targeted doping, and optimization of operation temperature. Here we summarize exciting progress of Ga 2 O 3 scintillators which have been pursued over the past few years. Our efforts cover a series of growth techniques of Ga 2 O 3 materials as well as discussion of emission mechanisms. Here we dedicate a targeted portion toward the doping strategies to improve the performance of Ga 2 O 3 . A detailed analysis is provided to compare the impact of different dopants. Through these efforts, we hope to provide useful perspectives to help accelerate the development of high performance Ga 2 O 3 scintillators.

36 MATERIALS SCIENCE↗

Gallium oxide (Ga 2 O 3 ) energy dependent scintillation response to fast neutrons and flash gamma-rays

Gallium oxide is a newly emerged ultrawide bandgap (4.9 eV) semiconductor that is suitable as a combined electronics and radiation detection platform. We have experimentally demonstrated fast neutron and gamma-ray scintillation from Czochralski-grown β-Ga 2 O 3 in a recent series (October 2023) of experiments at the unmoderated pulsed neutron spallation source located at the Los Alamos Neutron Science Center. Using the neutron time-of-flight (TOF) technique and a fast-gated intensified CCD camera, we observed energy-dependent neutron scintillation for neutron energies ranging from 1 to 400 MeV, including the 14.1 MeV neutron energy relevant to D–T fusion. Neutron flux is quantified and calibrated by cascading the scintillator after the fission chamber, enabling a detailed analysis of temporal and energy-dependent characteristics of the scintillation events. Further, a pronounced scintillation signal from the spallation gamma flash with a temporal full width of half maximum of ~4 ns is indicative of the material’s rapid response. Neutron energy dependent scintillation is observed using the TOF method at a 22.6-m distance from the neutron source. These results highlight the possibility of developing a Ga 2 O 3 based fusion neutron diagnostic platform integrated with both scintillation and electronics functions on the integrated chip scale.

47 OTHER INSTRUMENTATION↗

Physics of Hard Spheres Experiment: Significant and Quantitative Findings Made

Direct examination of atomic interactions is difficult. One powerful approach to visualizing atomic interactions is to study near-index-matched colloidal dispersions of microscopic plastic spheres, which can be probed by visible light. Such spheres interact through hydrodynamic and Brownian forces, but they feel no direct force before an infinite repulsion at contact. Through the microgravity flight of the Physics of Hard Spheres Experiment (PHaSE), researchers have sought a more complete understanding of the entropically driven disorder-order transition in hard-sphere colloidal dispersions. The experiment was conceived by Professors Paul M. Chaikin and William B. Russel of Princeton University. Microgravity was required because, on Earth, index-matched colloidal dispersions often cannot be density matched, resulting in significant settling over the crystallization period. This settling makes them a poor model of the equilibrium atomic system, where the effect of gravity is truly negligible. For this purpose, a customized light-scattering instrument was designed, built, and flown by the NASA Glenn Research Center at Lewis Field on the space shuttle (shuttle missions STS 83 and STS 94). This instrument performed both static and dynamic light scattering, with sample oscillation for determining rheological properties. Scattered light from a 532- nm laser was recorded either by a 10-bit charge-coupled discharge (CCD) camera from a concentric screen covering angles of 0 to 60 or by sensitive avalanche photodiode detectors, which convert the photons into binary data from which two correlators compute autocorrelation functions. The sample cell was driven by a direct-current servomotor to allow sinusoidal oscillation for the measurement of rheological properties. Significant microgravity research findings include the observation of beautiful dendritic crystals, the crystallization of a "glassy phase" sample in microgravity that did not crystallize for over 1 year in 1g (Earth's gravity), and the emergence of face-centered-cubic (FCC) crystals late in the coarsening process (as small crystallites lost particles to the slow ripening of large crystallites). Significant quantitative findings from the microgravity experiments have been developed describing complex interactions among crystallites during the growth process, as concentration fields overlap in the surrounding disordered phase. Time-resolved Bragg scattering under microgravity captures one effect of these interactions quite conclusively for the sample at a volume fraction of 0.528. From the earliest time until the sample is almost fully crystalline, the size and overall crystallinity grow monotonically, but the number of crystallites per unit volume (number density) falls. Apparently nucleation is slower than the loss of crystallites because of the transfer of particles from small to large crystals. Thus, coarsening occurs simultaneously with growth, rather than following the completion of nucleation and growth as is generally assumed. In the same sample, an interesting signature appears in the apparent number density of crystallites and the volume fraction within the crystallites shortly before full crystallinity is reached. A brief upturn in both indicates the creation of more domains of the size of the average crystallite simultaneous with the compression of the crystallites. Only the emergence of dendritic arms offers a reasonable explanation. The arms would be "seen" by the light scattering as separate domains whose smaller radii of curvature would compress the interior phase. In fiscal year 1999, numerous papers, a doctoral dissertation, and the PHaSE final report were produced. Although this flight project has been completed, plans are in place for a follow-on colloid experiment by Chaikin and Russel that employs a light microscope within Glenn's Fluids and Combustion Facility on the International Space Station. PHaSE is providing us with a deeper understanding of the nure of phase transitions. The knowledge derived has added to the understanding of condensed matter. In addition, the burgeoning study of the dynamics of colloidal self-assembly may lead to the development of a range of photonic materials that control the desirable properties of light. Thus, applications of ordered colloidal structures include not only ultrastructure ceramics, but also photonic crystals and photothermal nanosecond light-switching devices. Industries dealing with semiconductors, electro-optics, ceramics, and composites stand to benefit from such advancements.

Doherty, Michael P.↗

Evidence of Coherent Elastic Neutrino-Nucleus Scattering with COHERENT’s Germanium Array

We report the first detection of coherent elastic neutrino-nucleus scattering (CEvNS) on natural germanium, measured at the Spallation Neutron Source at Oak Ridge National Laboratory. The Ge-Mini detector of the COHERENT collaboration employs large-mass, low-noise, high-purity germanium spectrometers, enabling excellent energy resolution, and an analysis threshold of 1.5 keV electron-equivalent ionization energy. We observe an on-beam excess of 20.6$^{+7.1}_{−6.3}$ counts with a total exposure of 10.22 GWhkg, and we reject the no-CEvNS hypothesis with 3.9⁢𝜎 significance. The result agrees with the predicted standard model of particle physics signal rate within 2⁢𝜎.

Electroweak interaction↗