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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 577 records · Page 32
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Tracking the evolution of processes occurring in silicon anodes in lithium ion batteries by 3D visualization of relaxation times

An unconventional electroanalytical method has been used for tracking processes in silicon anodes in lithium ion batteries: a 3D visualization of relaxation times. Impedance data of the electrodes were collected at different potentials and different cycles during cyclic voltammetry, and were treated by means of the Distribution of Relaxation Times (DRT) method. A 3D visualization of the results allowed to identify the formation of a solid electrolyte interphase on the anode, composed of two layers with different relaxation times. Such findings are not possible by conventional analysis of impedance data by modeling with equivalent circuits, nor by simple DRT alone. Additionally, it was possible to observe that the characteristic relaxation time of the lithiation of the Si anode becomes smaller upon cycling, indicating that the material experiences structural transformations that allow it to lithiate faster. The result is relevant to motivate the use of micron-sized particles in the anode.

25 ENERGY STORAGE↗
DOE OSTI2020

Electric current–assisted direct joining of silicon carbide

Conventional direct joining technologies are difficult to use with silicon carbide (SiC) materials, especially for fiber composite forms of SiC, because of the harsh conditions required. Therefore, to reduce the temperature and/or process time required for the direct joining process, an electric current–assisted joining (ECAJ) method was studied. Joining of low–resistivity grade, nitrogen doped β-SiC was demonstrated at a relatively low nominal temperature of 1750 °C with a 10 min hold by enhancing the passage of current through the material. The joining mechanism is discussed in terms of localized overheating and accelerated self-diffusion at the interface. In the case of joining at 2160 °C for 1 min, rapid crystal growth of textured SiC was found at the interface. This study indicates that rapid ECAJ-based direct joining is a practical and appropriate method for joining SiC-based materials.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Review of additive manufacturing and densification techniques for the net- and near net-shaping of geometrically complex silicon nitride components

Silicon nitride (Si 3 N 4 ) is an advantageous material due its unique combination of mechanical, thermal, chemical, and electrical properties both at ambient and elevated temperatures. Because of these properties there are a wide range of applications for Si 3 N 4 components. Applications include heat exchangers, environmental barrier coatings, osteointegration scaffolds, radomes, and integrated circuitry. Furthermore, such applications often require geometric complexity for efficient and/or effective operation. However, traditional ceramics processing methods such as hot-pressing or die extrusion are typically limited to simple axis-symmetric shapes. With the advent of additive manufacturing, there has been significant advancement into the forming of geometrically complex Si 3 N 4 components. This review documents additive manufacturing advancements that have demonstrated, or are capable of, fabricating Si 3 N 4 components with complex geometry.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Ab initio study of the structure and properties of amorphous silicon hydride from accelerated molecular dynamics simulations

This paper presents a large-scale ab initio simulation study of amorphous silicon hydride (a-Si 1-x H x ) with an emphasis on the structure and properties of the material across a range of hydrogen concentration by combining accelerated molecular dynamics (MD) simulations with first-principles density-functional calculations. The accelerated MD scheme relied on classical metadynamics, which enabled the development of 2500+ high-quality structural models of a-Si 1-x H x , with system sizes ranging from 150 to 6000 atoms and hydrogen concentrations vary from 6 to 20 at. %. The resulting amorphous networks were found to be completely free from any coordination defects and that they all exhibited a pristine band-gap in their electronic spectrum. The microstructural properties of hydrogen distributions were examined with an emphasis on the presence of isolated and clustered environments of hydrogen atoms. The results were compared with experimental data obtained from X-ray diffraction, infrared spectroscopy and nuclear magnetic resonance studies.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Additive manufacturing of silicon carbide for nuclear applications

Additive manufacturing (AM) is a rapidly evolving technology being considered for nuclear applications. A special focus on AM to fabricate nuclear-grade silicon carbide (SiC) is explored in this paper. First, we present currently available AM processing options for SiC. AM methods commonly used for other ceramics, in which the feedstocks are forms of polymers, powders, and/or reactive chemical vapors, are also applicable to SiC. SiC phases are formed by pyrolysis of pre-ceramic polymer, direct reaction of powder precursors, sintering of SiC powders, or chemical vapor deposition/infiltration. Second, we discuss how the different microstructures of SiC materials fabricated by various processing methods affect their behavior in nuclear environments. Third, we discuss state-of-the-art AM technologies for the fabrication of relatively pure SiC, which show great potential to retain its strength under neutron irradiation: (1) binder jet printing followed by chemical vapor infiltration, (2) laser chemical vapor deposition, and (3) selective laser sintering of SiC powders.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Embedded Sensors in Additively Manufactured Silicon Carbide

Silicon carbide (SiC) components are being considered for a wide range of nuclear applications due to their high-temperature strength retention, low neutron absorption, chemical inertness, and dimensional stability under neutron irradiation. However, machining and joining of SiC components have traditionally limited its application to relatively simple geometries. Recent work has demonstrated additive manufacturing of complex, high-purity, crystalline SiC components using a combination of binder jet printing and densification via chemical vapor infiltration (CVI). The process lends itself to embedding of fuel, absorbers, moderators, and sensors at strategic locations within a component. The latter could allow for enhanced in situ performance monitoring of limiting fuel temperatures, self-shielded neutron flux, and potentially spatially distributed strain within complex SiC components if sensors can be successfully embedded during CVI. This work describes (1) methods for embedding sensors; (2) thermodynamic analyses and material compatibility testing for identifying sensors capable of surviving high temperatures and exposure to hydrogen and hydrogen chloride during CVI; and (3) nuclear applications for embedded sensors, including potential failure modes during fabrication and during reactor operation. Molybdenum-sheathed thermocouples were successfully embedded in a complex SiC component, whereas niobium-sheathed high-temperature irradiation-resistant thermocouples started to drift as soon as the reactant gases were introduced and ultimately failed during CVI due to severe constrained expansion, potentially resulting from niobium hydride formation in the low-temperature region of the CVI system. Optical fibers were successfully embedded in SiC, but further work is needed to protect the fragile fiber leads after their protective coatings are removed during CVI.

thermocouples↗
DOE OSTI2020

Evolution of solid electrolyte interphase and active material in the silicon wafer model system

Alloying anode materials for lithium-ion batteries, such as silicon (Si), are an important focus of materials research due to the demand for increased energy density for electric vehicles and stationary grid storage. However, progress towards next generation anode materials has been hindered by poor capacity retention due to the instability of the Si active material and the solid electrolyte interphase (SEI). Herein, the evolution of the active Si material and the SEI are simultaneously investigated from the perspective of chemical, structural, morphological, and electronic evolution in the Si wafer model system through its cycling life, using time-of-flight secondary ion mass spectrometry (TOF-SIMS), scanning transmission electron microscopy (STEM), atomic force microscopy (AFM), and scanning spreading resistance microscopy (SSRM). The results illustrate a dynamic evolution of the SEI and active Si material through cycling. Through an improved understanding of evolution of SEI and Si active material within the Si wafer model system, mitigation strategies may be designed to extend the lifetime of Si anodes.

25 ENERGY STORAGE↗
DOE OSTI2021

Role of silicon-graphite homogeneity as promoted by low molecular weight dispersants

This study explores low molecular weight polymers with the same chemical repeat structure as high molecular weight poly acrylic acid (PAA) and lithium poly acrylic acid (LiPAA) binders which act as a dispersant to improve the silicon-graphite electrode performance. The electrodes which utilize LiPAA as a dispersant perform, on average, the best with respect to the maximum capacity (compared to theoretical), rate performance, and capacity retention with time. These electrodes also have the poorest dispersion of binder, indicating that the poor binder dispersion is essential to electrode performance. In contrast, this study shows that electrodes formulated using PAA had good dispersion and performs the worst in cycling. Finally, this work demonstrates that the binder is not uniformly distributed in the electrode, but rather resides in local regions. Overall, the results indicate these regions accommodate volume expansion during cycling.

25 ENERGY STORAGE↗
DOE OSTI2023

Multi-modal characterization methods of solid-electrolyte interphase in silicon-graphite composite electrodes

Composite silicon-graphite (Si-Gr) anodes can improve battery energy density, due to Si's high gravimetric capacity, while mitigating mechanical degradation of the anode and solid-electrolyte interphase (SEI) caused by Si volumetric expansion. Optimizing these anodes is challenging, in part due to difficulty characterizing the SEI structure and composition. In this work, we present multi-modal characterization of the SEI on composite Si-Gr anodes to relate SEI chemical composition and structure to functional properties. Discrepancies in elemental concentrations from X-ray photoelectron spectroscopy, Auger electron spectroscopy, and energy-dispersive X-ray spectroscopy (EDS) are attributed to varying information depth and lateral resolution of the individual probes. However, by combining quantitative composition information with spatially resolved element mapping from scanning transmission electron microscopy, EDS, and electron energy loss spectroscopy, a holistic picture of the SEI emerges. We observe the bilayer SEI structure and a direct correlation between elemental Li and F, suggesting that most Li in the SEI exists as lithium fluoride (LiF). Further, LiF concentration is directly proportional to the maximum SEI resistivity, as determined by scanning spreading resistance microscopy. Lastly, there is an inverse relationship between lithium carbonate and LiF concentration in the SEI, providing insight into the detailed chemistry of SEI formation and evolution.

25 ENERGY STORAGE↗
DOE OSTI2020

Ultra-efficient polymer binder for silicon anode in high-capacity lithium-ion batteries

As a highly promising anode material for high-capacity lithium-ion batteries (LIBs), the low electronic conductivity and large volume variation of silicon (Si) make the slurry-coating Si based electrode requiring high content of “inert” materials and suffering rapid capacity fading. In this work, a polyimine, synthesized via one-step condensation reaction, has been demonstrated as an ultra-efficient polymer binder that can resolve the above issues. The polyimine binder containing Si electrode delivers superior electrochemical performance: a delithiation specific capacity of 804.4 mAh g –1 with capacity retention of 82.4% after 1000 cycles at the current density of 2 A g –1 . The high efficiency of polyimine binder for Si electrode has also been demonstrated with ultrahigh weight ratio of “active” material to “inert” material (R A/I ). The electrode with 95 wt% of Si (95Si/Polyimine, R A/I = 19) reveals a reversible delithiation capacity of 2114 mAh g –1 (capacity retention ~ 80.4%) over 200 cycles at the current density of 400 mA g –1 . Even at the high current density of 2 A g –1 , a delithiation capacity of 1087.8 mAh g –1 after 500 cycles can be obtained. Molecular simulations and atomic force microscopy (AFM) indentation are utilized to investigate the ultra-efficiency of polyimine binder. With simple manufacturing process and ultra-efficient binder performance, the designed polyimine binder will be definitely meaningful in achieving low-cost and high-capacity LIBs with prolonged cycle life.

25 ENERGY STORAGE↗
DOE OSTI2025

Multi-phase characterization of pitch-carbon coated nano-silicon anodes for lithium-ion batteries

Silicon (Si) is a leading next-generation Li-ion battery anode candidate that meets rigorous performance demands for portable power including enhanced power and energy density with robust cycling performance. However, a series of complex and interrelated reactions lead to reduced calendar life in Si-containing systems and therefore challenge practical adoption. In the present work, we probe the mechanisms underlying observed performance improvements by adding a pitch-carbon coating onto nano-Si material. We pair solid-phase (X-ray photoemission spectroscopy, Fourier-transform infrared), semi-volatile phase (solid-phase microextraction-gas chromatography-mass spectrometry), and gas-phase (gas chromatography-flame-ionization detector) characterization signals to comprehensively evaluate the impact of pitch-carbon coating on the evolution of the Si solid-electrolyte interphase (SEI) and the associated impacts on electrode/electrolyte reactivity. The pitch-carbon is found to serve as a physicochemical barrier, reducing the electro-active surface area for Si/electrolyte reactivity and preventing Si oxidation. Further, the pitch-carbon coating promotes the evolution of a more-favorable SEI by subsuming substantial functionality typically associated with the fluoroethylene carbonate (FEC) electrolyte additive - such as alkoxide scavenging and suppression of transesterification pathways - and by shifting the competitive electrolyte degradation pathways' favorability. The multi-phase characterization approach enables holistic end-products evaluation from complex (electro)chemical interfacial reactions, which informs a robust interpretation of the carbon coating's role in electrochemical performance improvements. The present mechanistic evaluation aids the rational design for improved nano-Si materials.

25 ENERGY STORAGE↗
DOE OSTI2020

Proton irradiation damage and annealing effects in ON Semiconductor J-series silicon photomultipliers

Silicon photomultipliers (SiPMs) have become popular light conversion devices in recent years due to their low bias voltage and sensitivity to wavelengths emitted from common scintillating materials. These properties make them particularly attractive for resource-constrained missions such as space-based detector applications. However, the space radiation environment is known to be particularly harsh on semiconductor devices, where high particle fluences can degrade performance over time. The radiation hardness of a particular SiPM, manufactured by ON Semiconductor (formally SensL), has yet to be studied with high energy protons, which are native to the space radiation environment. As such, to study these effects we have irradiated groups of two SiPMs to four different fluences of 800 MeV protons delivered by the accelerator at the Los Alamos Neutron Science Center. Fluences of 1.68 × 10 9 , 1.73 × 10 10 , 6.91 × 10 10 , and 1.73 × 10 11 protons cm –2 , and their corresponding estimated doses of 0.15, 1.55, 6.19, and 15.5 kRad, were chosen based on estimates of the potential exposure a SiPM might receive during an interplanetary space mission lasting 10 years. We report the effects these doses have on dark current and the self-annealing time.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Exploration of methods to remove implanted 210 Pb and 210 Po contamination from silicon surfaces

Radioactive contaminants on the surfaces of detector components can be a problematic source of background events for physics experiments searching for rare processes. Exposure to radon is a specific concern because it can result in the relatively long-lived 210 Pb (and progeny) being implanted to significant subsurface depths such that removal is challenging. Here, in this article, we present results from a broad exploration of cleaning treatments to remove implanted 210 Pb and 210 Po contamination from silicon, which is a material frequently used in rare-events searches. We demonstrate for the first time that heat treatments (“baking”) can effectively mitigate such surface contamination, with a 1200 °C bake resulting in a 97$^{+2}_{-3}$% reduction. We also report results using wet-chemistry and plasma-based methods, which show that etching can be highly effective provided the etch depth is sufficiently aggressive. Our survey of cleaning methods suggests consideration of multiple approaches during the different phases of detector construction to enable greater flexibility for efficient removal of 210 Pb and 210 Po surface contamination.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2026

Evaluation of 3D pixel silicon sensors for the CMS Phase-2 Inner Tracker

The high-luminosity upgrade of the CERN LHC requires the replacement of the CMS tracking detector to cope with the increased radiation fluence while maintaining its excellent performance. An extensive R&D program, aiming at using 3D pixel silicon sensors in the innermost barrel layer of the detector, has been carried out by CMS in collaboration with the FBK (Trento, Italy) and CNM (Barcelona, Spain) foundries. The sensors will feature a pixel cell size of 25 × 100 µm 2 , with a centrally located electrode connected to the readout chip. The sensors are read out by the RD53A and CROCv1 chips, developed in 65 nm CMOS technology by the RD53 Collaboration, a joint effort between the ATLAS and CMS groups. This paper reports the results achieved in beam test experiments before and after irradiation, up to a fluence of approximately 2 . 6 × 1 0 16 n eq /cm 2 . Measurements of assemblies irradiated to a fluence of 1 × 10 16 n˙eq/cm 2 show a hit detection efficiency higher than 96% at normal incidence, with fewer than 2% of channels masked, across a bias voltage range greater than 50 V . Even after irradiation to a higher fluence of 1.6 × 10 16 n˙eq/cm 2 , similar performance is maintained over a bias voltage range of 30 V , remaining well within CMS requirements.

3D pixel↗
DOE OSTI2022

Technoeconomic Analysis of High-Value, Crystalline Silicon Photovoltaic Module Recycling Processes

Recycling is an important circular economy strategy, and for photovoltaics (PV), the one that has received the greatest research attention. Recycling of PV modules is required in Europe; everywhere else it competes in the market of end-of-life options, where cost is a primary decision factor. The vast majority of PV modules sold globally are crystalline-silicon (c-Si); most of the rest of the market are cadmium telluride thin film modules whose primary manufacturer runs its own commercial-scale recycling program. While many different c-Si recycling approaches and technologies have been proposed, they generally lack accompanying cost estimates or enough process information to model costs. Herein we develop detailed estimates of seven categories of capital and operating costs along with estimates of revenue from recovered materials for each step in two proposed recycling processes for c-Si PV modules. Using these results, we develop a hypothetical third recycling process merging process steps from the original two, estimate surcharges required to achieve minimum sustainable prices for each recycling process, as well as consider how economies of scale could reduce costs. Increasing the purity of and identifying higher-value markets for recovered materials are approaches to reducing costs and increasing recycling rates in voluntary markets.

crystalline silicon↗
DOE OSTI2022

Impact of acetic acid exposure on metal contact degradation of different crystalline silicon solar cell technologies

Degradation due to acetic acid in photovoltaic (PV) modules has been a commonly observed phenomenon for both damp-heat exposure and outdoor operations. Acetic acid is a degradation byproduct of ethylene-vinyl acetate (EVA), a common module encapsulant. To address this issue, robust metallization pastes and cell technologies are being developed. However, it is important to assess how these technologies perform in an acetic acid environment and withstand degradation before they are implemented in the solar market. In this work, we investigate the impact of acetic acid exposure on four different cell groups: monofacial passivated emitter and rear contact (PERC) cells with advanced telluride-based front contact pastes, bifacial PERC cells with novel aluminum rear contact pastes, bifacial tunnel oxide passivated contacts (TOPCon) cells, and silicon heterojunction (SHJ) cells. These cells were exposed to acetic acid for different time increments. The recombination losses were characterized by Suns-VOC, and multi-variate regression analysis of intensity-dependent photoluminescence (PL) images with Griddler AI. Resistive losses were tracked with the transmission line method (TLM). Samples showing severe performance degradation were selected for further materials characterization to understand the root cause. Top-down and cross-sectional scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), and X-ray photoelectron spectroscopy (XPS) were performed to investigate the change in materials properties. Our study shows that the front contacts of the bifacial TOPCon cells and monofacial PERC cells were significantly affected by acetic acid exposure. Here, the SHJ cells were found to be the most stable.

14 SOLAR ENERGY↗
DOE OSTI2024

Photon management in silicon photovoltaic cells: A critical review

With the practical efficiency of the silicon photovoltaic (PV) cell approaching its theoretical limit, pushing conversion efficiencies even higher now relies on reducing every type of power loss that can occur within the device. Limiting optical losses is therefore critical and requires effective management of incident photons in terms of how they interact with the device. Ultimately, photon management within a PV cell means engineering the device and constituent materials to maximize photon absorption within the active semiconductor and therefore reduce the number of photons lost through other means, most notably reflection and parasitic absorption. There have been great advancements in the front and the rear side photon management techniques in recent years. This review aims to discuss these advancements and compare the various approaches, not only in terms of increases in photogenerated current, but also their compatibility with different PV cell architectures and potential trade-offs, like increased surface recombination or scalability for high-volume manufacturing. In this review, a comprehensive discussion of a wide variety of the front and the rear side photon management structures are presented with suggestions to improve the already achieved performance further. Here, this review is unique because it not only presents the recent development in photon management techniques, but also offers through analysis of these techniques and pathways to improve further.

14 SOLAR ENERGY↗
DOE OSTI2025

Resistivity distribution and donor properties of antimony-doped n -type Czochralski silicon ingots

We investigate antimony (Sb)-doped Czochralski-grown silicon as an alternative n-type substrate for photovoltaic applications, and characterize their axial resistivity distribution, donor properties, and mechanical strength. We find that Sb-doped ingots can achieve a more uniform resistivity distribution along the axial direction compared to P-doped counterparts. Dopant concentration profiles in P-doped ingots can be accurately modelled using the standard Scheil's equation, accounting only for dopant segregation during solidification. In contrast, modelling Sb-doped ingots requires consideration of both dopant segregation and evaporation effects to fit the dopant distribution accurately. Using electron paramagnetic resonance spectroscopy at 9 K, we observe two hyperfine lines in P-doped samples, and six hyperfine lines for Sb 121 and eight for Sb 123 isotopes, with the number of hyperfine lines governed by the nuclear spins. We further identify two-atom Sb clustering in the Sb-doped wafers, confirmed through simulations of the additional weak electron paramagnetic resonance peaks. Finally, we find that 140 μm as-cut planar Sb-doped wafers exhibit slightly higher mechanical strength compared to P-doped wafers.

14 SOLAR ENERGY↗