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All sourcesNASA NTRSDOE OSTI
NASA NTRS2002

Large Format Si:As IBC Array Performance for NGST and Future IR Space Telescope Applications

A mid-IR (5-30micrometer) instrument aboard a cryogenic space telescope can have an enormous impact in resolving key questions in astronomy and cosmology. A space platform's greatly reduced thermal backgrounds (compared to airborne or ground-based platforms), allow for more sensitive observations of dusty young galaxies at high redshifts, star formation of solar-type stars in the local universe, and formation and evolution of planetary disks and systems. The previous generation's largest, in sensitive IR detectors at these wavelengths are 256x256 pixel Si:As Impurity Band Conduction (IBC) devices built by Raytheon Infrared Operations (RIO) for the Space Infrared Telescope Facility/Infrared Array Camera (SIRTF)/(IRAC) instrument. RIO has successfully enhanced these devices, increasing the pixel count by a factor of 16 while matching or exceeding SIRTF/IRAC device performance. NASA-ARC in collaboration with RIO has tested the first high performance large format (1024x 1024) Si:As IBC arrays for low background applications, such as for the middle instrument on Next Generation Space Telescope (NGST) and future IR Explorer missions. These hybrid devices consist of radiation hard SIRTF/IRAC-type Si:As IBC material mated to a readout multiplexer that has been specially processed for operation at low cryogenic temperatures (below 10K), yielding high device sensitivity over a wavelength range of 5-28 micrometers. We present laboratory testing results from these benchmark, devices. Continued development in this technology is essential for conducting large-area surveys of the local and early universe through observation and for complementing future missions such as NGST, Terrestrial Planet Finder (TPF), and Focal Plane Instruments and Requirement Science Team (FIRST).

Ennico, Kimberly↗
NASA NTRS2002

The Stellar Imager (SI) Mission Concept

The Stellar Imager (SI) is envisioned as a space-based, UV-optical interferometer composed of 10 or more one-meter class elements distributed with a maximum baseline of 0.5 approximately km. It will image stars and binaries with one hundred to one thousand resolution elements on their surface and enable long-term studies of stellar magnetic activity patterns and their evolution with time, for comparison with those on the sun. It will also sound their interiors through asteroseismology to image internal structure, differential rotation, and large-scale circulations. SI will enable us to understand the various effects of magnetic fields of stars, the dynamos that generate these fields, and the internal structure and dynamics of the stars in which these dynamos operate. The ultimate goal of the mission is to achieve the best possible forecasting of solar activity as a driver of climate and space weather on times scales ranging from months to decades, and an understanding of the impact of stellar magnetic activity on astrobiology and life in the Universe. The road to that goal will revolutionize our understanding of stars and stellar systems, the building blocks of the Universe. Fitting naturally within the NASA and ESA long-term time lines, SI complements defined missions, and with them will show us entire other solar systems, from the central star to their orbiting planets. In this paper we will describe the scientific goals of the mission, the performance requirements needed to address those goals, and the design concepts now under study.

Carpenter, Kenneth S.↗
NASA NTRS2002

The Stellar Imager (SI): An Ultra-High Angular Resolution UV/Optical Observatory

The Stellar Imager (SI) is envisioned as a space-based, UV-optical interferometer composed of 10 or more one-meter class elements distributed with a maximum baseline of 0.5-km and providing a resolution of 60 micro-arcseconds at 1550 A. It will image stars and binaries with one hundred to one thousand resolution elements on their surface and enable long-term studies of stellar magnetic activity patterns and their evolution with time, for comparison with those on the sun. It will also sound their interiors through asteroseismology to image internal structure, differential rotation, and large-scale circulations. SI will enable us to understand the various effects of magnetic fields of stars, the dynamos that generate these fields, and the internal structure and dynamics of the stars in which these dynamos operate. The ultimate goal of the mission is to achieve the best-possible forecasting of solar activity as a driver of climate and space weather on times scales ranging from months up to decades, and an understanding of the impact of stellar magnetic activity on life in the Universe. The road to that goal will revolutionize our understanding of stars and stellar systems, the building blocks of the Universe. Fitting naturally within the NASA and ESA long-term time lines, SI complements defined missions, and with them will show us entire other solar systems, from the central star to their orbiting planets. In this paper we will describe the scientific goals of the mission, the performance requirements needed to address those goals, and the design concepts now under study.

Carpenter, Kenneth G.↗
NASA NTRS2002

The Stellar Imager (SI) Mission Concept: Imaging the Surfaces and Interiors of Other Stars

The Stellar Imager (SI) is envisioned as a space-based, uv-optical interferometer composed of 10 or more one-meter class elements distributed with a maximum. baseline of 0.5-km and providing a resolution of 60 micro-arcseconds at 1550 A. It will image stars and binaries with one hundred to one thousand resolution elements on their surface and enable long-term studies of stellar magnetic activity patterns and their evolution with time, for comparison with those on the sun. It will also sound their interiors through asteroseismology to image internal structure, differential rotation, and large-scale circulations. SI will enable us to understand the various effects of magnetic fields of stars, the dynamos that generate these fields, and the internal structure and dynamic the stars in which these dynamos operate. The ultimate goal of the mission is to achieve the best-possible forecasting of solar activity as a driver of climate and space weather on times scales ranging from months up to decades, and an understanding of the impact of stellar magnetic activity on life in the universe. The road to that goal will revolutionize our understanding of stars and stellar systems, the building blocks of the universe. Fitting naturally within the NASA and ESA long-term time lines, SI complements defined missions, and with them will show us entire other solar systems, from the central star to their orbiting planets. in this paper we describe the scientific goals of the mission, the performance requirements needed to address those goals, and the design concepts now under study.

Carpenter, Kenneth G.↗
NASA NTRS2003

Vanadium, Cr, Si, and the Mg/Si Ratio of the Earth

Experiments investigating the partitioning of V, Cr, and Si between metal and silicate at various pressures, temperatures, redox state, and composition demonstrate that V and Cr are always more siderophile than Si. The relatively high abundances of V and Cr in the Earth's upper mantle indicate that the high Mg/Si ratio of the Earth's upper mantle cannot be attributed to extraction of Si into the core and must be an intrinsic bulk property of the silicate Earth.

Drake, Michael J.↗
NASA NTRS2004

The Stellar Imager (SI) "Vision Mission"

The Stellar Imager (SI) is a Vision Mission in the Sun-Earth Connection (SEC) NASA Roadmap, conceived for the purpose of understanding the effects of stellar magnetic fields, the dynamos that generate them, and the internal structure and dynamics of the stars in which they exist. The ultimate goal is to achieve the best possible forecasting of solar/stellar activity and its impact on life in the Universe. The science goals of SI require an ultra-high angular resolution, a t ultraviolet wavelengths, on the order of 100 micro-arcsec and baselines on the order of 0.5 km. These requirements call for a large, multi-spacecraft (>20) imaging interferometer, utilizing precision formation flying in a stable environment, such as in a Lissajous orbit around the Sun-Earth L2 point. In this paper, we present an update on the ongoing SI mission concept and technology development studies.

Carpenter, K.↗
NASA NTRS2004

LEO Flight Testing of GaAs on Si Solar Cells Aboard MISSES

Previous research efforts have demonstrated small area (0.04 cm) GaAs on Si (GaAs/Si) solar cells with AM0 efficiencies in excess of 17%. These results were achieved on Si substrates coated with a step graded buffer of Si(x),Ge(1-x) alloys graded to 100% Ge. Recently, a 100-fold increase in device area was accomplished for these devices in preparation for on-orbit testing of this technology aboard Materials International Space Station Experiment number 5 (MISSE5). The GaAs/Si MISSE5 experiment contains five (5) GaAs/Si test devices with areas of lcm(exp 2) and 4cm(exp 4) as well as two (2) GaAs on GaAs control devices. Electrical performance data, measured on-orbit for three (3) of the test devices and one (1) of the control devices, will be telemetered to ground stations daily. After approximately one year on orbit, the MISSE5 payload will be returned to Earth for post flight evaluation. This paper will discuss the development of the GaAs/Si devices for the MISSE5 flight experiment and will present recent ground and on-orbit performance data.

Wilt, David M.↗
NASA NTRS2006

Si XII X-ray Satellite Lines in Solar Flare Spectra

The temperature dependence of the Si XII n=3 and n=4 dielectronic satellite line features at 5.82A and 5.56A respectively, near the Si XIII 1s(sup 2)-1s3p and 1s(sup 2)-1s4p lines (5.681A and 5.405A), is calculated using atomic data presented here. The resulting theoretical spectra are compared with solar flare spectra observed by the RESIK spectrometer on the CORONAS-F spacecraft. The satellites, like the more familiar n=2 satellites near the Si XIII 1s(sup 2)-1s2p lines, are formed mostly by dielectronic recombination, but unlike the n=2 satellites are unblended. The implications for similar satellite lines in flare Fe spectra are discussed.

Phillips, K. J. H.↗
NASA NTRS2004

The Stellar Imager (SI) "Vision Mission"

The Stellar Imager (SI) is a Vision Mission in the Sun-Earth Connection (SEC) NASA Roadmap, conceived for the purpose of understanding the effects of stellar magnetic fields, the dynamos that generate them, and the internal structure and dynamics of the stars in which they exist. The ultimate goal is to achieve the best possible forecasting of solar/stellar activity and its impact on life in the Universe. The science goals of SI require an ultra-high angular resolution, at ultraviolet wavelengths, on the order of 100 micro-arcsec and baselines on the order of 0.5 km. These requirements call for a large, multi-spacecraft (greater than 20) imaging interferometer, utilizing precision formation flying in a stable environment, such as in a Lissajous orbit around the Sun-Earth L2 point. In this paper, we present an update on the ongoing SI mission concept and technology development studies.

Carpenter, K.↗
NASA NTRS2008

Commercialization of LARC(TradeMark)-SI Polyimide Technology

LARC(TradeMark)-SI, Langley Research Center-Soluble Imide, was developed in 1992. This new polyimide won a 1995 Research and Development 100 Award, with the first patent issuing in 1997 and subsequent issued patents in 1998 and 2000. Currently, this polymer has been successfully licensed by NASA, and has generated revenues in excess of 1.4 million dollars. This might seem insignificant in comparison to industrially developed technology, where the customer is understood, technologies that use a novel assembly of commercial off the shelf (COTS) components, or software patents and "method based" innovations that do not require any material beyond labor, as examples. However, consider that LARC(TradeMark)-SI competes in areas currently dominated by traditional materials at a cost disadvantage ($350/lb) and that the physical-mechanical properties of LARC(TradeMark)-SI are similar to other high performance polymers. Indeed the success of this particular polymer was due to many factors and many lessons learned to the point that the invention was the most important, but least significant part in the commercialization of this material. This brief paper outlines the significant factors that occurred to make this technology available for the public access and application development that led to the licensing success of this material.

Bryant, Robert G.↗
NASA NTRS2012

Fundamental Investigation of Si Anode in Li-Ion Cells

Silicon is a promising and attractive anode material to replace graphite for high capacity lithium ion cells since its theoretical capacity is approximately 10 times of graphite and it is an abundant element on earth. However, there are challenges associated with using silicon as Li-ion anode due to the significant first cycle irreversible capacity loss and subsequent rapid capacity fade during cycling. In this paper, cyclic voltammetry and electrochemical impedance spectroscopy are used to build a fundamental understanding of silicon anodes. The results show that it is difficult to form the SEI film on the surface of Si anode during the first cycle, the lithium ion insertion and de-insertion kinetics for Si are sluggish, and the cell internal resistance changes with the state of lithiation after electrochemical cycling. These results are compared with those for extensively studied graphite anodes. The understanding gained from this study will help to design better Si anodes.

Wu, James J.↗
NASA NTRS2012

Characterization Approaches to Place Invariant Sites on SI-Traceable Scales

The effort to understand the Earth's climate system requires a complete integration of remote sensing imager data across time and multiple countries. Such an integration necessarily requires ensuring inter-consistency between multiple sensors to create the data sets needed to understand the climate system. Past efforts at inter-consistency have forced agreement between two sensors using sources that are viewed by both sensors at nearly the same time, and thus tend to be near polar regions over snow and ice. The current work describes a method that would provide an absolute radiometric calibration of a sensor rather than an inter-consistency of a sensor relative to another. The approach also relies on defensible error budgets that eventually provides a cross comparison of sensors without systematic errors. The basis of the technique is a model-based, SI-traceable prediction of at-sensor radiance over selected sites. The predicted radiance would be valid for arbitrary view and illumination angles and for any date of interest that is dominated by clear-sky conditions. The effort effectively works to characterize the sites as sources with known top-of-atmosphere radiance allowing accurate intercomparison of sensor data that without the need for coincident views. Data from the Advanced Spaceborne Thermal Emission and Reflection and Radiometer (ASTER), Enhanced Thematic Mapper Plus (ETM+), and Moderate Resolution Imaging Spectroradiometer (MODIS) are used to demonstrate the difficulties of cross calibration as applied to current sensors. Special attention is given to the differences caused in the cross-comparison of sensors in radiance space as opposed to reflectance space. The radiance comparisons lead to significant differences created by the specific solar model used for each sensor. The paper also proposes methods to mitigate the largest error sources in future systems. The results from these historical intercomparisons provide the basis for a set of recommendations to ensure future SI-traceable cross calibration using future missions such as CLARREO and TRUTHS. The paper describes a proposed approach that relies on model-based, SI-traceable predictions of at-sensor radiance over selected sites. The predicted radiance would be valid for arbitrary view and illumination angles and for any date of interest that is dominated by clear-sky conditions. The basis of the method is highly accurate measurements of at-sensor radiance of sufficient quality to understand the spectral and BRDF characteristics of the site and sufficient historical data to develop an understanding of temporal effects from changing surface and atmospheric conditions.

Thome, Kurtis↗
DOE OSTI2021

Effective Dielectric Passivation Scheme in Area-Selective Front/Back Poly-Si/SiOx Passivating Contact Solar Cells

Explored different dielectric passivation schemes on lifetime samples after removing poly-Si completely. Showed that SiNx/Al2O3 had the best passivation properties on SiOx/n+ c-Si in diffused surface. Applied SiNx/Al2O3 stack on poly-Si/SiOx passivating contact device and showed large improvement in Jsc, with best device efficiency of 21.8%. Future work: CV measurement of dielectric stacks to obtain Qf and Dit.

dielectric↗
DOE OSTI2022

Si-based CTE-matched substrate for laser diode packaging

A Cu—Si—Cu substrate having a silicon substrate, copper plating on opposite sides of the silicon substrate, and copper vias extending thru the silicon substrate to electrically and thermally connect the copper platings together. The thicknesses of the silicon substrate and the copper platings are selected so that a coefficient of thermal expansion (CTE) of the Cu—Si—Cu substrate is substantially the same as a CTE of a material to be mounted on the Cu—Si—Cu substrate.

Patra, Susant↗
DOE OSTI2023

Structure and Electronic Properties of Mesopores in Si PV Devices with PLEO Contacts

All current state-of-the-art silicon photovoltaic (PV) devices employ some flavor of passivating contact structure to minimize detrimental recombination while providing good conductivity. These properties are most often provided by a dielectric layer (SiNx, Al2O3, or SiOx) that is in contact with the crystalline silicon (c-Si) substrate. The effectiveness of these layers is heavily dependent on the nanoscale structure of both the dielectric layers and the crystalline silicon interface. As an example, the tunneling probability for charge carriers across thin SiOx layers, a process that is critical to maintain high conductivity, is extremely sensitive to the SiOx thickness. SiOx with a thickness below 2 nm readily allows charge carrier tunneling, whereas it is impeded for greater thicknesses. In the latter case it has been shown that modifications to the thermal processing schedule can induce disruptions, or pinholes, in thick SiOx layers that allow transport of charge carriers while maintaining excellent passivation. However, this requires higher temperatures processes that may inhibit widespread adoption by industry. Recently, another option has been presented that may circumvent the necessity for high temperature processing, namely metal assisted chemical etching (MACE). MACE relies on deposition of Ag nanoparticles onto the SiOx layers with subsequent electroless etching to form mesopores in the SiOx layers that are analogous to the pinholes created with high temperature processing. The size and density can be controlled based on the Ag nanoparticle deposition conditions. The resulting contact structure is known as polysilicon on locally etched oxide (PLEO) contacts. The nanoscale structure of the mesopores in PLEO contacts define the device level observables such as recombination current (Jo) and junction resistance. In this work we present atomic resolution transmission electron microscopy (TEM) analysis of mesopores in PLEO contacts formed with a different processing conditions to connect provide insight into how the nanoscale structure of the SiOx layer influences PV device properties. Additionally, we have previously used electron beam induced current (EBIC) to probe local transport properties in Si PV devices with a SiOx layer containing pinholes due to high temperature processing. Using EBIC we were able to directly show the enhance charge carrier transport through the pinholes. Here we also employ EBIC to study non-uniformities in charge carrier recombination and transport associated with mesopores in PLEO contacts and compare these results with our previous work on devices with pinholes in the SiOx formed through high temperature processes. The products of this work provide critical information that is required to both further optimize performance of Si PV devices with PLEO contact and to drive future adoption of this technology by industry.

ENGINEERING,SOLAR ENERGY↗
DOE OSTI2024

Screen-Printed Complex Ag Inks for Si HJT Metallization

Metallization using reactive metal inks has recently attracted significant research interest due to its advantages in cost of materials and manufacturing, while still achieving performance comparable to traditional fire-through particle pastes. Here, we present for the first time the use of reactive silver (Ag) inks via industrial screen-printing and inkjet printing methods for the metallization of different Si surfaces used in tunneling oxide passivating contacts (TOPCon) and Silicon heterojunction (SHJ) solar cells. Printed Ag lines exhibit a conductivity of ~5 Mu O·cm, which is approximately 3 times that of bulk Ag (1.59 µO·cm). The printed metal has a thickness of ~0.5-1.5 Mu m, an order of magnitude smaller than the current fire-through metal finger thickness (~15 Mu m). Contact resistivity measurements of the screen-printed and inkjet-printed samples on a transparent conducting oxide (TCO) surface show a very low value of ~0.2-12 mO·cm 2. Photoluminescence images of the metallized samples demonstrate minimal surface passivation degradation compared to the non-metallized areas (?iVoc <3.5 mV). Scanning electron microscopy images (SEM) reveal the structure of the printed metals on the Si surfaces as porous but much denser than fire-through Ag by nanoparticle paste. In the final presentation, we will showcase our results of printing these reactive Ag inks on high-efficiency heterojunction and TOPCon solar cells with full-area M6 wafers. Additionally, the adhesion of these reactive Ag inks on different Si surfaces according to ASTM D3359-17, as well as the performance of solar cells after standard IEC 61215 freeze/thaw and damp heat tests, will be presented. These new metal inks show promising potential as an alternative to the currently dominant particle-based pastes, offering lower Ag consumption and lower processing temperatures without compromising performance.

heterojunction solar cells↗
DOE OSTI2020

Materials Data on Si(PH2)4 by Materials Project

Si(PH2)4 is BCT5-like structured and crystallizes in the monoclinic P2_1/c space group. The structure is zero-dimensional and consists of four 214424-22-3 molecules. Si4- is bonded in a tetrahedral geometry to four P1- atoms. There are one shorter (2.27 Å) and three longer (2.28 Å) Si–P bond lengths. There are four inequivalent P1- sites. In the first P1- site, P1- is bonded in a distorted T-shaped geometry to one Si4- and two H1+ atoms. Both P–H bond lengths are 1.43 Å. In the second P1- site, P1- is bonded in a distorted T-shaped geometry to one Si4- and two H1+ atoms. Both P–H bond lengths are 1.43 Å. In the third P1- site, P1- is bonded in a distorted T-shaped geometry to one Si4- and two H1+ atoms. Both P–H bond lengths are 1.43 Å. In the fourth P1- site, P1- is bonded in a distorted T-shaped geometry to one Si4- and two H1+ atoms. Both P–H bond lengths are 1.43 Å. There are eight inequivalent H1+ sites. In the first H1+ site, H1+ is bonded in a single-bond geometry to one P1- atom. In the second H1+ site, H1+ is bonded in a single-bond geometry to one P1- atom. In the third H1+ site, H1+ is bonded in a single-bond geometry to one P1- atom. In the fourth H1+ site, H1+ is bonded in a single-bond geometry to one P1- atom. In the fifth H1+ site, H1+ is bonded in a single-bond geometry to one P1- atom. In the sixth H1+ site, H1+ is bonded in a single-bond geometry to one P1- atom. In the seventh H1+ site, H1+ is bonded in a single-bond geometry to one P1- atom. In the eighth H1+ site, H1+ is bonded in a single-bond geometry to one P1- atom.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Si(Sn3O4)2 by Materials Project

Si(Sn3O4)2 crystallizes in the hexagonal P6_3mc space group. The structure is three-dimensional. there are two inequivalent Sn2+ sites. In the first Sn2+ site, Sn2+ is bonded in a 4-coordinate geometry to four O2- atoms. There are a spread of Sn–O bond distances ranging from 2.09–2.52 Å. In the second Sn2+ site, Sn2+ is bonded in a 4-coordinate geometry to four O2- atoms. There are a spread of Sn–O bond distances ranging from 2.11–2.51 Å. Si4+ is bonded in a tetrahedral geometry to four O2- atoms. There is one shorter (1.66 Å) and three longer (1.67 Å) Si–O bond length. There are four inequivalent O2- sites. In the first O2- site, O2- is bonded in a trigonal non-coplanar geometry to three Sn2+ atoms. In the second O2- site, O2- is bonded in a distorted single-bond geometry to three Sn2+ and one Si4+ atom. In the third O2- site, O2- is bonded in a trigonal planar geometry to three equivalent Sn2+ atoms. In the fourth O2- site, O2- is bonded in a distorted single-bond geometry to three equivalent Sn2+ and one Si4+ atom.

36 MATERIALS SCIENCE↗