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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 577 records · Page 32
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

15.3% AM1.5G Efficiency GaAs Solar Cells Fabricated via an Epitaxy-Free Process

Here, we report simple and potentially low-cost techniques for creating high-quality n-type gallium arsenide (GaAs) and GaAs p/n junctions and fabricate GaAs p/n junction solar cells. Detailed-balance modeling suggests that 20% AM1.5G efficiency p/n homojunction devices may be possible if the surface doping concentration can be limited to values less than ∼ 5 × 10 19 cm −3 . Our process exploits an open-tube, vapor-phase, deposition-free, zinc diffusion technique for forming p-type layers in melt-grown n-GaAs substrates that results in sheet resistances less than 1 kΩ/$\square$. In addition, we have improved the minority carrier diffusion lengths of melt-grown GaAs from less than one micron to over five microns using an open-tube, vacuum-free, annealing process which reduces the density of EL2 midgap defects. Finally, we have combined these advances to fabricate epitaxy-free, GaAs solar cells with a validated AM1.5G efficiency of 15.3%.

14 SOLAR ENERGY↗
DOE OSTI2023

Identification and characterization of deep nitrogen acceptors in β-Ga 2 O 3 using defect spectroscopies

The ability to achieve highly resistive beta-phase gallium oxide (β-Ga 2 O 3 ) layers and substrates is critical for β-Ga 2 O 3 high voltage and RF devices. To date, the most common approach involves doping with iron (Fe), which generates a moderately deep acceptor-like defect state located at E C -0.8 eV in the β-Ga 2 O 3 bandgap. Recently, there has been growing interest in alternative acceptors, such as magnesium (Mg) and nitrogen (N), due to their predicted deeper energy levels, which could avoid inadvertent charge modulation during device operation. In this work, a systematic study that makes direct correlations between the introduction of N using ion implantation and the observation of a newly observed deep level at E C -2.9 eV detected by deep-level optical spectroscopy (DLOS) is presented. The concentration of this state displayed a monotonic dependence with N concentration over a range of implant conditions, as confirmed by secondary ion mass spectrometry (SIMS). With a near 1:1 match in absolute N and E C -2.9 eV trap concentrations from SIMS and DLOS, respectively, which also matched the measured removal of free electrons from capacitance-voltage studies, this indicates that N contributes a very efficiently incorporated compensating defect. Density functional theory calculations confirm the assignment of this state to be an N (0/-1) acceptor with a configuration of N occupying the oxygen site III [N O(III) ]. The near ideal efficiency for this state to compensate free electrons and its location toward the midgap region of the β-Ga 2 O 3 bandgap demonstrates the potential of N doping as a promising approach for producing semi-insulating β-Ga 2 O 3 .

36 MATERIALS SCIENCE↗
DOE OSTI2025

Operation of AlGaN Channel HEMTs at 850 °C With ON/OFF Ratio >10 4

Here, we report 850 ° C operation of ultrawide bandgap (UWBG) Al-rich Al 0.68 Ga 0.32 N channel high electron mobility transistors (HEMTs) at atmospheric pressure in nitrogen ambient. Temperature dependent DC electrical characteristics were measured in situ up to 850 ° C, after exposure to 850 ° C for 60 minutes, and at 25 ° C after high temperature testing. At 850 ° C (time, t = 0 min), all HEMTs tested maintained an on/off ratio greater than 10 4 (maximum of 4.6 × 10 4 ). The threshold voltage demonstrated excellent stability with less than ±10% deviation. After returning to 25 ° C, the devices showed negligible degradation. In fact, the off-state gate current decreased and on/off ratio slightly increased. The robustness of these UWBG AlGaN transistors at temperatures up to 850 ° C demonstrates their viability for extreme environment applications.

AlGaN↗
DOE OSTI2017

Deterministic Integration of Biological and Soft Materials onto 3D Microscale Cellular Frameworks

Complex 3D organizations of materials represent ubiquitous structural motifs found in the most sophisticated forms of matter, the most notable of which are in life-sustaining hierarchical structures found in biology, but where simpler examples also exist as dense multilayered constructs in high-performance electronics. Each class of system evinces specific enabling forms of assembly to establish their functional organization at length scales not dissimilar to tissue-level constructs. Furthermore, this study describes materials and means of assembly that extend and join these disparate systems—schemes for the functional integration of soft and biological materials with synthetic 3D microscale, open frameworks that can leverage the most advanced forms of multilayer electronic technologies, including device-grade semiconductors such as monocrystalline silicon. Cellular migration behaviors, temporal dependencies of their growth, and contact guidance cues provided by the nonplanarity of these frameworks illustrate design criteria useful for their functional integration with living matter (e.g., NIH 3T3 fibroblast and primary rat dorsal root ganglion cell cultures).

36 MATERIALS SCIENCE↗
DOE OSTI2019

Phosphorus-Rich Colloidal Cobalt Diphosphide (CoP 2 ) Nanocrystals for Electrochemical and Photoelectrochemical Hydrogen Evolution

Developing earth-abundant and efficient electrocatalysts for photoelectrochemical water splitting is critical to realizing a high-performance solar-to-hydrogen energy conversion process. Here in this paper, phosphorus-rich colloidal cobalt diphosphide nanocrystals (CoP 2 NCs) are synthesized via hot injection. The CoP 2 NCs show a Pt-like hydrogen evolution reaction (HER) electrocatalytic activity in acidic solution with a small overpotential of 39 mV to achieve -10 mA cm -2 and a very low Tafel slope of 32 mV dec -1 . Density functional theory (DFT) calculations reveal that the high P content both physically separates Co atoms to prevent H from over binding to multiple Co atoms, while simultaneously stabilizing H adsorbed to single Co atoms. The catalytic performance of the CoP 2 NCs is further demonstrated in a metal–insulator–semiconductor photoelectrochemical device consisting of bottom p-Si light absorber, atomic layer deposition Al–ZnO passivation layers, and the CoP 2 cocatalyst. The p-Si/AZO/TiO 2 /CoP 2 photocathode shows a photocurrent density of -16.7 mA cm -2 at 0 V versus reversible hydrogen electrode (RHE) and an output photovoltage of 0.54 V. The high performance and stability are attributed to the junction between p-Si and AZO, the corrosion-resistance of the pinhole-free TiO 2 protective layer, and the fast HER kinetics of the CoP 2 NCs.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Distinct exciton dissociation behavior of organolead trihalide perovskite and excitonic semiconductors studied in a same device

The nonexcitonic character for organometal trihalide perovskites is demonstrated by examining the field-dependent exciton dissociation behavior. Moreover, it is found that photogenerated excitons can be effectively dissociated into free charges inside perovskite without the assistance of charge extraction layer or external field, which is a stark contrast to the charge-separation behavior in excitonic materials in the same photovoltaic operation system.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

High-Responsivity Graphene–Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit

Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal–oxide–semiconductor (CMOS) devices for high-speed and low-power optical interconnects. We demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cutoff at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we conclude that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron–phonon supercollision cooling. This nonlinear photoresponse enables optical on-chip autocorrelation measurements with picosecond-scale timing resolution and exceptionally low peak powers.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Direct Optoelectronic Imaging of 2D Semiconductor–3D Metal Buried Interfaces

The semiconductor-metal junction is one of the most critical factors for high performance electronic devices. In two-dimensional (2D) semiconductor devices, minimizing voltage drop at this junction is of particularly challenging and important. Despite numerous studies on contact resistance in 2D semiconductors, the exact nature of the buried interface under a 3D metal remains elusive and unclear. Herein, we report the direct observation of 2D semiconductor-metal buried interface using recently developed metal-assisted transfer technique to expose the buried interface which is then directly investigated using scanning probe techniques. We characterize the spatially varying electronic and optical properties of this buried interface with < 20 nm resolution. To be specific, potential, conductance and photoluminescence at the buried metal/MoS 2 interface are correlated under variety of metal deposition conditions as well as type of metal contacts. We observe that direct evaporation of Au on MoS 2 induces large strain of ~5% in the MoS 2 which coupled with charge transfer leads to degenerate doping of the MoS 2 underneath the contact. These factors lead to improvement of contact resistance to record values of 138 kΩ μm measured using local conductance probes. This approach was adopted to investigate MoS 2 -In/Au alloy interface, which records lowest contact resistance of 63 kΩ μm. Overall, our results highlight that the MoS 2 /Metal interface is very sensitive to method of contact making and provides a universal strategy to characterize buried contact interfaces involving 2D semiconductors.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

In-depth analysis of chloride treatments for thin-film CdTe solar cells

CdTe thin-film solar cells are now the main industrially established alternative to silicon-based photovoltaics. These cells remain reliant on the so-called chloride activation step in order to achieve high conversion efficiencies. Here, by comparison of effective and ineffective chloride treatments, we show the main role of the chloride process to be the modification of grain boundaries through chlorine accumulation, which leads an increase in the carrier lifetime. It is also demonstrated that while improvements in fill factor and short circuit current may be achieved through use of the ineffective chlorides, or indeed simple air annealing, voltage improvement is linked directly to chlorine incorporation at the grain boundaries. Lastly, this suggests that focus on improved or more controlled grain boundary treatments may provide a route to achieving higher cell voltages and thus efficiencies.

14 SOLAR ENERGY↗
DOE OSTI2023

Linewidth narrowing in self-injection-locked on-chip lasers

Abstract Stable laser emission with narrow linewidth is of critical importance in many applications, including coherent communications, LIDAR, and remote sensing. In this work, the physics underlying spectral narrowing of self-injection-locked on-chip lasers to Hz-level lasing linewidth is investigated using a composite-cavity structure. Heterogeneously integrated III–V/SiN lasers operating with quantum-dot and quantum-well active regions are analyzed with a focus on the effects of carrier quantum confinement. The intrinsic differences are associated with gain saturation and carrier-induced refractive index, which are directly connected with 0- and 2-dimensional carrier densities of states. Results from parametric studies are presented for tradeoffs involved with tailoring the linewidth, output power, and injection current for different device configurations. Though both quantum-well and quantum-dot devices show similar linewidth-narrowing capabilities, the former emits at a higher optical power in the self-injection-locked state, while the latter is more energy-efficient. Lastly, a multi-objective optimization analysis is provided to optimize the operation and design parameters. For the quantum-well laser, minimizing the number of quantum-well layers is found to decrease the threshold current without significantly reducing the output power. For the quantum-dot laser, increasing the quantum-dot layers or density in each layer increases the output power without significantly increasing the threshold current. These findings serve to guide more detailed parametric studies to produce timely results for engineering design.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Complete polarization of electronic spins in OLEDs

At low temperatures and high magnetic fields, electron and hole spins in an organic light-emitting diode become polarized so that recombination preferentially forms molecular triplet excited-state species. For low device currents, magnetoelectroluminescence perfectly follows Boltzmann activation, implying a virtually complete polarization outcome. As the current increases, the magnetoelectroluminescence effect is reduced because spin polarization is suppressed by the reduction in carrier residence time within the device. Under these conditions, an additional field-dependent process affecting the spin-dependent recombination emerges, possibly related to the build-up of triplet excitons and their interaction with free charge carriers. Suppression of the EL alone does not prove electronic spin polarization. We therefore probe changes in the spin statistics of recombination directly in a dual singlet-triplet emitting material, which shows a concomitant rise in phosphorescence intensity as fluorescence is suppressed. Finite spin-orbit coupling in these materials gives rise to a microscopic distribution in effective g-factors of electrons and holes, Δg, i.e., a distribution in Larmor frequencies. This Δg effect in the pair, which mixes singlet and triplet, further suppresses singlet-exciton formation at high fields in addition to thermal spin polarization of the individual carriers.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

An open experimental database for exploring inorganic materials

The use of advanced machine learning algorithms in experimental materials science is limited by the lack of sufficiently large and diverse datasets amenable to data mining. If publicly open, such data resources would also enable materials research by scientists without access to expensive experimental equipment. Here, we report on our progress towards a publicly open High Throughput Experimental Materials (HTEM) Database (htem.nrel.gov). This database currently contains 140,000 sample entries, characterized by structural (100,000), synthetic (80,000), chemical (70,000), and optoelectronic (50,000) properties of inorganic thin film materials, grouped in >4,000 sample entries across >100 materials systems; more than a half of these data are publicly available. This article shows how the HTEM database may enable scientists to explore materials by browsing web-based user interface and an application programming interface. This paper also describes a HTE approach to generating materials data, and discusses the laboratory information management system (LIMS), that underpin HTEM database. Finally, this manuscript illustrates how advanced machine learning algorithms can be adopted to materials science problems using this open data resource.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Photodoping of graphene with long-lived electrons by interfacing with Janus WSSe

The performance of semiconductor optoelectronic devices depends on efficient photodoping of active materials, where optical excitation generates photocarriers. Despite more than two decades of research, efficient photodoping in graphene remains elusive due to the formation of neutral excitons with ultrashort lifetimes. Here, by interfacing graphene with a Janus WSSe monolayer, we achieve unipolar photodoping of graphene with long-lived carriers. The Janus monolayer was synthesized via selenium implantation of WS 2 monolayers grown by chemical vapor deposition. We fabricated the heterostructure by transferring a mechanically exfoliated graphene monolayer onto the Se-terminated side of WSSe. Through photoluminescence and transient absorption spectroscopy, we demonstrate that photoexcited electrons in WSSe transfer efficiently to graphene, while a portion of the photoexcited holes remains confined in WSSe due to its built-in electric field. This charge separation leads to a net electron population in graphene. These electrons exhibit extended lifetimes due to spatial separation from their recombination partners, offering a promising route to enhancing the performance of graphene-based optoelectronic devices.

Zheng, Ting [Southeast Univ., Nanjing (China); Uni↗
DOE OSTI2014

Room temperature spin transport in undoped (110) GaAs/AlGaAs quantum wells

We are reporting on our first observation of a micrometer-order electron spin transport in a (110) GaAs/AlGaAs multiple quantum well (QW) at room temperature using a space- and time-resolved Kerr rotation technique. A 37-μm transport was observed within an electron spin lifetime of 1.2 ns at room temperature when using an in-plane electric field of 1.75 kV/cm. The spatio-temporal profiles of electron spins were well reproduced by the spin drift-diffusion equations coupled with the Poisson equation, supporting the validity of the measurement. The results suggest that (110) QWs are useful as a spin transport layer for semiconductor spintronic devices operating at room temperature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Three-terminal magnetic tunneling junction device with perpendicular anisotropy CoFeB sensing layer

We demonstrated read and write characteristics of a three terminal memory device with a perpendicular anisotropy-free layer of a strip of [Co/Ni] and a low-switching perpendicular-anisotropy CoFeB/MgO sensing layer. This new design of the cell results in a small cell area. The switching magnetic field of the sensing layer can be decreased by changing sputtering gas for the Ta-cap from Ar to Kr. An electron energy-loss spectroscopy analysis of the cross-section of the magnetic tunneling junction (MTJ) revealed that the boron content in CoFeB with a Kr-sputtered Ta-cap was smaller than that with an Ar-sputtered one. A change in resistance for the MTJ was observed that corresponded to the magnetic switching of the Co/Ni wire and its magnetoresistance ratio and critical current were 90% and 0.8 mA, respectively.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Electronic modulations in a single wall carbon nanotube induced by the Au(111) surface reconstruction

The structural and electronic structure of single wall carbon nanotubes adsorbed on Au(111) has been investigated by low-temperature scanning tunneling microscopy and spectroscopy. The nanotubes were dry deposited in situ in ultrahigh vacuum onto a perfectly clean substrate. In some cases, the native herringbone reconstruction of the Au(111) surface interacted directly with adsorbed nanotubes and produced long-range periodic oscillations in their local density of states, corresponding to charge transfer modulations along the tube axis. This effect, however, was observed not systematically for all tubes and only for semiconducting tubes.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

A model for thermal oxidation of Si and SiC including material expansion

A model based on drift-diffusion-reaction kinetics for Si and SiC oxidation is discussed, which takes the material expansion into account with an additional convection term. The associated velocity field is determined self-consistently from the local reaction rate. The approach allows a calculation of the densities of volatile species in an nm-resolution at the oxidation front. The model is illustrated with simulation results for the growth and impurity redistribution during Si oxidation and for carbon and silicon emission during SiC oxidation. The approach can be useful for the prediction of Si and/or C interstitial distribution, which is particularly relevant for the quality of metal-oxide-semiconductor electronic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Effects of rapid thermal annealing on the structural and local atomic properties of ZnO: Ge nanocomposite thin films

We have investigated the structural and local atomic properties of Ge nanocrystals (Ge-ncs) embedded ZnO (ZnO: Ge) thin films. The films were deposited by sequential sputtering of ZnO and Ge thin film layers on z-cut quartz substrates followed by an ex-situ rapid thermal annealing (RTA) at 600 °C for 30, 60, and 90 s under forming gas atmosphere. Effects of RTA time on the evolution of Ge-ncs were investigated by x-ray diffraction (XRD), scanning electron microscopy (SEM), hard x-ray photoelectron spectroscopy (HAXPES), and extended x-ray absorption fine structure (EXAFS). XRD patterns have clearly shown that fcc diamond phase Ge-ncs of sizes ranging between 18 and 27 nm are formed upon RTA and no Ge-oxide peak has been detected. However, cross-section SEM images have clearly revealed that after RTA process, Ge layers form varying size nanoclusters composed of Ge-ncs regions. EXAFS performed at the Ge K-edge to probe the local atomic structure of the Ge-ncs has revealed that as prepared ZnO:Ge possesses Ge-oxide but subsequent RTA leads to crystalline Ge structure without the oxide layer. In order to study the occupied electronic structure, HAXPES has been utilized. The peak separation between the Zn 2p and Ge 3d shows no significant change due to RTA. This implies little change in the valence band offset due to RTA.

77 NANOSCIENCE AND NANOTECHNOLOGY↗