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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 577 records · Page 32
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Multiplicity dependence of charged-particle production in pp, p–Pb, Xe–Xe and Pb–Pb collisions at the LHC

Multiplicity (N ch ) distributions and transverse momentum (p T ) spectra of inclusive primary charged particles in the kinematic range of |η| < 0.8 and 0.15 GeV/c < p T < 10 GeV/c are reported for pp, p–Pb, Xe–Xe and Pb–Pb collisions at centre-of-mass energies per nucleon pair ranging from $\sqrt{s_{NN}}$ = 2.76 TeV up to 13 TeV. A sequential two-dimensional unfolding procedure is used to extract the correlation between the transverse momentum of primary charged particles and the charged-particle multiplicity of the corresponding collision. This correlation sharply characterises important features of the final state of a collision and, therefore, can be used as a stringent test of theoretical models. The multiplicity distributions as well as the mean and standard deviation derived from the p T spectra are compared to state-of-the-art model predictions. Providing these fundamental observables of bulk particle production consistently across a wide range of collision energies and system sizes can serve as an important input for tuning Monte Carlo event generators.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2024

Observation of abnormal suppression of f 0 (980) production in p–Pb collisions at $\sqrt{s_{NN}}$= 5.02 TeV

The dependence of f 0 (980) production on the final-state charged-particle multiplicity in p–Pb collisions at $\sqrt{s_{NN}}$= 5.02 TeV is reported. The production of f 0 (980) is measured with the ALICE detector via the f 0 (980) → π + π – decay channel in a midrapidity region of –0.5 < y < 0. Particle yield ratios of f 0 (980) to π and K*(892) 0 are found to be decreasing with increasing charged-particle multiplicity. The magnitude of the suppression of the f 0 (980)/π and f 0 (980)/K*(892) 0 yield ratios is found to be dependent on the transverse momentum p T , suggesting different mechanisms responsible for the measured effects. Furthermore, the nuclear modification factor Q pPb of f 0 (980) is measured in various multiplicity ranges. The Q pPb shows a strong suppression of the f 0 (980) production in the p T region up to about 4 GeV/c. The results on the particle yield ratios and Q pPb for f 0 (980) may help to understand the late hadronic phase in p–Pb collisions and the nature of the internal structure of f 0 (980) particle.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2024

Evidence of the singly Cabibbo suppressed decay Λ c + → p π 0

Evidence for the singly Cabibbo suppressed decay Λ c + → p π 0 is reported for the first time with a statistical significance of 3.7 σ based on 6.0 fb − 1 of e + e − collision data collected at center-of-mass energies between 4.600 and 4.843 GeV with the BESIII detector at the BEPCII collider. The absolute branching fraction of Λ c + → p π 0 is measured to be ( 1.5 6 − 0.58 + 0.72 ± 0.20 ) × 10 − 4 . Combining with the branching fraction of Λ c + → n π + , ( 6.6 ± 1.3 ) × 10 − 4 , the ratio of the branching fractions of Λ c + → n π + and Λ c + → p π 0 is calculated to be 3.2 − 1.2 + 2.2 . As an important input for the theoretical models describing the decay mechanisms of charmed baryons, our result indicates that the nonfactorizable contributions play an essential role and their interference with the factorizable contributions should not be significant. In addition, the absolute branching fraction of Λ c + → p η is measured to be ( 1.63 ± 0.3 1 stat ± 0.1 1 syst ) × 10 − 3 . Published by the American Physical Society 2024

Astronomy & Astrophysics↗
DOE OSTI2025

Capacitated p -hub approach for park-and-ride facility location problem under nested logit demand function: polyhedral approaches

By generalizing the unconstrained p-hub approach for the park-and-ride (P&R) facility location problem under the multinomial logit demand function, the capacitated p-hub approach for the problem under the nested logit demand function captures a broader range of real-world cases. To solve this problem optimally, we introduce a mixed-integer linear program and accelerate its solution by enhancing the branch-and-cut procedure. To address the problem at a large scale, we introduce two other polyhedral approaches: variable neighborhood search (VNS) and adaptive randomized rounding (ARR). Downtown areas in Seoul have a high modal share of public transportation and congested road traffic, yet P&R has not been widely implemented. Therefore, we apply the ARR procedure to solve a real-world problem using traffic and geographic data from the Seoul metropolitan area. ARR performs better than VNS and addresses real-world cases. The solutions obtained by ARR present a phased expansion plan that encourages policymakers to start installing a small number of P&Rs immediately.

Capacitated p-hub approach↗
DOE OSTI2022

Role of p-GaN layer thickness in the degradation of InGaN-GaN MQW solar cells under 405 nm laser excitation

GaN-based solar cells with InGaN multiple quantum wells (MQWs) are promising devices for application in space environment, concentrator solar systems, wireless power transmission and multi-junction solar cells. It is therefore important to understand their degradation kinetics when submitted to high-temperature and high-intensity stress. We submitted three samples of GaN-InGaN MQW solar cells with p-AlGaN electron-blocking-layer with different thickness of the p-GaN layer to constant power stress at 310 W/cm 2 , 175 °C for several hundred hours. The main degradation modes are a reduction of open-circuit voltage, short-circuit current, external quantum efficiency, power conversion efficiency and electroluminescence. In particular, we observed that a thinner p-GaN layer results in a stronger degradation observed on the cell operating parameters. The analysis of the dark I-V characteristics showed an increase in low-forward bias current and the analysis of electroluminescence showed a decrease in the electroluminescene emitted by the (forward biased) cell, as a consequence of stress. This work highlights that the cause of degradation is possibly related to a diffusion mechanism, which results in an increase of defect density in the active region. Finally, the impurities involved in the diffusion processes possibly originate from the p-side of the devices, therefore a thicker p-GaN layer reduces the amount of defects reaching the active region.

14 SOLAR ENERGY↗
DOE OSTI2022

Unveiling the influence of selective-area-regrowth interfaces on local electronic properties of GaN p-n junctions for efficient power devices

Here, we report correlated nanoscale mapping of the structure, composition, and properties of regrown GaN p-n junctions to identify how etching and non-planar regrowth processes limit diode performance via the introduction of unintentional dopants and defect states. p-GaN was selectively regrown in n-GaN trenches with SiO 2 masks of variable mask-to-trench-width ratio. Dilute Al layers were periodically introduced during regrowth as markers of the growth interface. Correlated nanoscale mapping of doping, conductivity, and dopant complexes was achieved with atom probe tomography (APT), scanning spreading resistance microscopy (SSRM), and cathodoluminescence (CL) spectroscopy, respectively. The Al marker layers, detected by APT, enabled reconstruction of the faceted growth interface and correlation of the dopant concentration with position and time. The p-GaN growth rate is proportional to the mask-to-trench width ratio while the dopant incorporation rate is invariant. At trench edges, magnesium incorporation is suppressed, and oxygen incorporation enhanced, due to preferential incorporation on the semi-polar growth surface, leading to compensation and less abrupt p-n junctions; the SiO 2 mask is a source of oxygen. Residual etch damage below the regrowth interface induces n-type and p-type conductivity, creating leakage pathways. The non-uniform Mg incorporation is driven by crystal anisotropy and is thus inherent to non-planar regrowth, but can be mitigated by engineering the regrowth interface and process parameters. The unprecedented integration of spatially resolved mapping of dopants, impurities, conductivity, and carrier type is a powerful approach to discriminating distinct factors that limit the performance of regrown diodes, enabling the rational optimization of process and device design.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Quenching of the quantum p -strength in light exotic nuclei

One-nucleon spectroscopic overlaps, their strength or spectroscopic factors (SFs), and nucleon removal cross sections for light nuclei in the mass range A≤12 were evaluated using the fully correlated Quantum Monte Carlo (QMC) wave functions (WFs). Harder (AV18+UX) and softer (NV2+3) bare interactions were used providing consistent results. The SFs were also taken from simple Shell Model (SM) calculations. This structure information was incorporated in the standard three-body Faddeev/Alt-Grassberger-Sandhas reaction formalism to evaluate the (p,pN) cross sections. The results further our understanding of the quenching of the quantum p-shell strength obtained from structure and reactions. We have found the ratios of the total QMC sums of SFs to the SM ones to be uniform and ∼ 3/4. The corresponding ratios of the sums Below Particle Threshold (BPT) of SFs, as well as of total cross sections, deviate strikingly from the uniform trend in some special cases. We find these ratios to be close to unit for 9 Li → 8 Li + n and 9 C → 8 B + p. In contrast, they are strongly reduced for 11 C → 10 C + n and 11 B → 10 Be + p mirror transitions, resulting from the quenching of the strength for low-lying 2 + final state transitions. The QMC theoretical cross section BPT for 11 C(p,pn) is about two times smaller than the experimental data.

(p,pN) reactions↗
DOE OSTI2026

Efficient and Robust p-Type Transistor Based on Ultrawide-Bandgap Semiconductor

The p-type transistor is an indispensable component of semiconductor technology, enabling a complementary operation with n-channel transistors for computation, storage, and communication. Achieving both high robustness and high efficiency is highly desirable but challenging for p-type transistors due to the limited semiconductors with reliable hole transport and their high activation energies. Here, in this study, we achieved a robust yet efficient p-type transistor by heterogeneously integrating an ultrawide-bandgap semiconductor and a high-κ dielectric layer through van der Waals integration. The p-type transistor employs a two-dimensional hole channel on hydrogenated diamond (bandgap 5.6 eV) combined with a high-κ (30.5) SrTiO 3 perovskite membrane. At room temperature, the transistor exhibits stable operation with a high on-current (∼200 mA/mm), low subthreshold swing (70 mV/dec), high hole mobility (566 cm 2 /(V·s) to 572 cm 2 /(V·s)), and high on–off ratio (∼10 9 ). Furthermore, tuning the annealing temperature allows operation in either enhancement or depletion mode. The robust p-type transistor with high efficiency holds great potential for future power electronics, ultraviolet (UV) optoelectronics, and harsh-environment electronic applications.

high-κ membrane↗
DOE OSTI2021

Investigation of secondary γ -ray angular distributions using the N 15 ( p , α 1 γ ) C * 12 reaction

The observation of secondary γ-rays provides an alternative method of measuring cross sections that populate excited final states in nuclear reactions. The angular distributions of these γ-rays also provide information on the underlying reaction mechanism. Despite a large amount of data of this type in the literature, publicly available R-matrix codes do not have the ability to calculate these types of angular distributions. In this report, the mathematical formalism derived in Brune and deBoer is implemented in the R-matrix code AZURE2 and calculations are compared with previous data from the literature for the 15 N( p, α1γ ) 12 C* reaction. In addition, new measurements, made at the University of Notre Dame Nuclear Science Laboratory using the Hybrid Array of Gamma Ray Detectors (HAGRiD), are reported that span an energy range from E p = 0.88 to 4.0 MeV. Excellent agreement between data and the phenomenological fit is obtained up to the limit of the previous fit at E p = 2.0 MeV and the R-matrix fit is extended from E x ≈ 13.5 up to E x ≈ 15.3 MeV, where 15 N+p and 12 C+α reactions are fit simultaneously for the first time. An excellent reproduction of the 15 N( p, α1γ ) 12 C* and 12 C(α, α) 12 C data is achieved, but inconsistencies and difficulty in fitting other data is encountered and discussed.

6 ≤ A ≤ 19↗
DOE OSTI2024

Measurement of g 9/2 strength in the stretched 8 – state and other negative parity states via the 51 V (d,p) 52 V reaction

We performed a measurement of the 51 V (d,p) 52 V reaction at 16 MeV using the Florida State University Super-Enge Split-Pole Spectrograph (SE-SPS) to search for single-neutron transfer strength for the g 9/2 intruder orbit. Measurements of νg 9/2 strength with (d, p) reactions in the N = 29 isotones 49 Ca, 51 Ti, 53 Cr, and 55 Fe have concluded that much of the expected νg 9/2 strength is “missing”; that is, the summed strength is much smaller than the sum rule. In odd-odd N = 29 isotones, we expect a significant amount of νg 9/2 strength to be located in the “stretched” 8 – states with π $f$$^{n}_{7/2}$νg 9/2 structure that were systematically observed in the odd-odd N = 29 isotones via the (α,d) reaction. 52 V is the only one of these odd-odd isotones in which a stable target is available for single-neutron transfer reactions. We report on a determination of νg 9/2 strength for the stretched 8 – state and ten other negative parity states populated via L = 4 transfer in the 51 V(d, p) 52 V reaction. Furthermore, this is the first measurement of spectroscopic strength for L = 4 states in 52 V via (d, p). In total, the L = 4 strength observed here sums to only 28.9(11)% of the sum rule for g 9/2 neutron strength, a result that is consistent with the summed strengths observed in recent (d, p) measurements of the even-Z N = 29 isotones 51 Ti, 53 Cr, and 55 Fe. The (α,3 He) reaction and the use of particle-γ coincidences would provide more sensitivity to search for the missing g 9/2 strength.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Machine learning enabled measurements of astrophysical (p,n) reactions with the SECAR recoil separator

he synthesis of heavy elements in supernovae is affected by low-energy (n,p) and (p,n) reactions on unstable nuclei, yet experimental data on such reaction rates are scarce. The SECAR (SEparator for CApture Reactions) recoil separator at FRIB (Facility for Rare Isotope Beams) was originally designed to measure astrophysical reactions that change the mass of a nucleus significantly. We used a novel approach that integrates machine learning with ion-optical simulations to find an ion-optical solution for the separator that enables the measurement of (p,n) reactions, despite the reaction leaving the mass of the nucleus nearly unchanged. A new measurement of the 58 Fe (p,n)⁢ 58 Co reaction in inverse kinematics with a 3.66 ± 0.12 MeV/nucleon 58 Fe beam (corresponding to 3.69 ± 0.12 MeV proton energy in normal kinematics) yielded a cross-section of 20.3 ± 6.3 mb and served as a proof of principle experiment for the new technique demonstrating its effectiveness in achieving the required performance criteria. This novel approach paves the way for studying astrophysically important (p,n) reactions on unstable nuclei produced at FRIB.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2020

Materials Data on P by Materials Project

P crystallizes in the monoclinic C2/m space group. The structure is zero-dimensional and consists of four tetraphosphorus molecules. P is bonded in a 3-coordinate geometry to three equivalent P atoms. All P–P bond lengths are 2.20 Å.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on P by Materials Project

P is alpha As structured and crystallizes in the trigonal R-3m space group. The structure is three-dimensional. P is bonded in a 6-coordinate geometry to six equivalent P atoms. There are three shorter (2.31 Å) and three longer (2.81 Å) P–P bond lengths.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on P by Materials Project

P is alpha Po structured and crystallizes in the orthorhombic Pmma space group. The structure is three-dimensional. P is bonded to six equivalent P atoms to form a mixture of edge and corner-sharing PP6 octahedra. The corner-sharing octahedra tilt angles range from 0–1°. All P–P bond lengths are 2.45 Å.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on P by Materials Project

P is alpha As structured and crystallizes in the orthorhombic Imma space group. The structure is three-dimensional. P is bonded in a 6-coordinate geometry to six equivalent P atoms. There are a spread of P–P bond distances ranging from 2.27–2.82 Å.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on P by Materials Project

P crystallizes in the orthorhombic Pmna space group. The structure is zero-dimensional and consists of two diphosphine molecules. P is bonded in a single-bond geometry to one P atom. The P–P bond length is 2.26 Å.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on P by Materials Project

P is Cubic alpha N2-like structured and crystallizes in the orthorhombic Aem2 space group. The structure is zero-dimensional and consists of four p2 molecules. P is bonded in a single-bond geometry to one P atom. The P–P bond length is 1.90 Å.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on P by Materials Project

P is Cubic alpha N2-like structured and crystallizes in the monoclinic C2/m space group. The structure is zero-dimensional and consists of two p2 molecules. P is bonded in a single-bond geometry to one P atom. The P–P bond length is 1.90 Å.

36 MATERIALS SCIENCE↗