Stability, Electronic and Optical Properties of M 4 M'X 4 (M = Ga or In, M' = Si, Ge, or Sn, X = Chalcogen) Photovoltaic Absorbers
Three-dimensional cubic M 4 M'X 4 (M = Ga or In, M' = Si, Ge, or Sn, and X = S, Se, or Te) have been proposed as photovoltaic absorber materials. Here, we present density functional theory investigation of the stability, electronic and optical properties of M 4 M'X 4 . We find that M 4 M'X 4 exhibit unique electronic properties. M elements lose partially both the outmost s and p electrons, whereas M' elements only lose a small fraction of the valence electrons. As a result, the conduction band edges of M 4 M'X 4 consist of a large contribution from the M s orbitals, leading to rather small electron effective masses. The valence bands are derived from M, M', and X p orbitals. The band gap of this family can be tuned by selecting the combination of M and X elements. Among these semiconductors, In 4 GeS 4 , In 4 GeSe 4 , In 4 SnS 4 , and In 4 SnSe 4 are suitable for photovoltaic applications due to their stability and suitable band gaps. However, the inclusion of scarce In may hinder their large-scale applications.