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At least 577 records · Page 32

Microhydration of the metastable N -Protomer of 4-Aminobenzoic acid by condensation at 80 K: H/D exchange without conversion to the more stable O- protomer

4-Aminobenzoic acid (4ABA) is a model scaffold for studying solvent-mediated proton transfer. Although protonation at the carboxylic group (O-protomer) is energetically favored in the gas phase, the N-protomer, where the proton remains on the amino group, can be kinetically trapped by electrospray ionization of 4ABA in an aprotic solvent such as acetonitrile. Here we report the formation of the hydrated deuterium isotopologues of the N-protomers, RND 3 + ·(H 2 O) n=1-3 , (R=C 6 H 4 COOD), which are generated by condensing water molecules onto the bare N-protomers in a liquid nitrogen cooled, radiofrequency octopole ion trap at 80 K. The product clusters are then transferred to a 20 K cryogenic ion trap where they are tagged with weakly bound D 2 molecules. The structures of these clusters are determined by analysis of their vibrational patterns obtained by resonant IR photodissociation. The resulting patterns confirm that the metastable N-protomer configuration remains intact even when warmed by sequential condensation of water molecules. Attachment of H 2 O molecules onto the RND 3 + head group also affords the opportunity to explore the possibility of H/D exchange between the acid scaffold and the proximal water network. The spectroscopic results establish that although the RND 3 + ·(H 2 O) n=1,2 clusters are formed without H/D exchange, the n = 3 cluster exhibits about 10% H/D exchange as evidenced by the appearance of the telltale HOD bands. Furthermore, the site of exchange on the acid is determined to be the acidic OH by the emergence of the OH stretching fundamental in the -COOH motif.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Engineering infinite-range SU($\textit{n}$) interactions with spin-orbit-coupled fermions in an optical lattice

Here, we study multilevel fermions in an optical lattice described by the Hubbard model with on-site SU($\textit{n}$) -symmetric interactions. We show that in an appropriate parameter regime this system can be mapped onto a spin model with all-to-all SU($\textit{n}$)-symmetric couplings. Raman pulses that address internal spin states modify the atomic dispersion relation and induce spin-orbit coupling, which can act as a synthetic inhomogeneous magnetic field that competes with the SU($\textit{n}$) exchange interactions. We investigate the mean-field dynamical phase diagram of the resulting model as a function of $\textit{n}$ and different initial configurations that are accessible with Raman pulses. Consistent with previous studies for $\textit{n}$ = 2 , we find that for some initial states the spin model exhibits two distinct dynamical phases that obey simple scaling relations with $\textit{n}$. Moreover, for $\textit{n}$ > 2 we find that dynamical behavior can be highly sensitive to initial intraspin coherences. Our predictions are readily testable in current experiments with ultracold alkaline-earth-metal(-like) atoms.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Improved Vertical Carrier Transport for Green III-Nitride LEDs Using ( In , Ga ) N Alloy Quantum Barriers

We report on experimental and simulation-based results using ( In , Ga ) N alloy quantum barriers in c -plane green light-emitting diode (LED) structures as a means to improve vertical carrier transport and reduce forward voltage ( V F ) . Three-dimensional device simulations that include random alloy fluctuations are used to understand carrier behavior in a disordered potential. The simulated current density–voltage ( J - V ) characteristics and modified electron-hole overlap | F mod | 2 indicate that increasing the indium fraction in the ( In , Ga ) N quantum barriers leads to a reduced polarization discontinuity at the interface between the quantum barrier and quantum well, thereby reducing V F and improving | F mod | 2 . Maps of electron and hole current through the device show a relatively homogenous distribution in the X Y plane for structures using Ga N quantum barriers; in contrast, preferential pathways for vertical transport are identified in structures with ( In , Ga ) N barriers as regions of high and low current. A positive correlation between hole (electron) current in the p -side ( n -side) barrier and indium fraction reveals that preferential pathways exist in regions of high indium content. Furthermore, a negative correlation between the strain ε z z and indium fraction shows that high indium content regions have reduced strain-induced piezoelectric polarization in the Z direction due to the mechanical constraint of the surrounding lower indium content regions. Experimentally, multiple quantum well green LEDs with ( In , Ga ) N quantum barriers exhibit lower V F and blue-shifted wavelengths relative to LEDs with Ga N quantum barriers, consistent with simulation data. These results can be used to inform heterostructure design of low V F , long-wavelength LEDs and provide important insight into the nature of carrier transport in III-nitride alloy materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Density functional studies of defects and defect-related luminescence in M g 3 N 2

M g 3 N 2 is a promising material for light-emitting-diode applications. However, the microscopic origin of the broad yellow photoluminescence in M g 3 N 2 remains unknown. In this study, defect properties and defect-related optical transitions are investigated based on the hybrid functional calculation. Our results show that the nitrogen vacancy introduces multiple localized defect states within the band gap, which play a dominant role in luminescent properties of M g 3 N 2 . Common impurities like hydrogen, oxygen, and carbon and their complexes with native defects are also studied. Compared with isolated V Mg , V Mg -H and V Mg – O N complexes have shallower transition levels. Our calculated optical excitation and emission peaks associated with isolated V N are in good agreement with those observed in experiments. In addition, the impurity C N is also a potential source for the observed yellow emission in M g 3 N 2 .

36 MATERIALS SCIENCE↗

Ordering in GaAs co-doped with Bi and N

Introducing only a few atomic percent of Bi or N in GaAs has a large effect on the band gap of the material. Specifically Bi doped GaAs shows potential for local band gap engineering in optoelectronic applications. The incorporation of Bi and N into GaAs is difficult due to strain effects. In this work we study the ordering of these dopants at the atomic scale in order to get a better understanding of the behavior of these dopants in the host lattice. Cross-sectional scanning tunneling microscopy is used to find the exact position of Bi and N dopants in the GaAs matrix, allowing us to study both their nearest neighbor pair occurrences and pair correlation functions. An attractive interaction between Bi dopants at short ranges (1-2 nm) is found and a similar effect is observed between N dopants. Here, we find a repulsive interaction with a similar length scale between Bi and N dopants. A similar repulsion is found in the Bi-N nearest neighbor pairs. Density functional theory is used to calculate the different nearest neighbor pair energies and test these results to the experimental pair occurrences. It is concluded from the experimental and theoretical results that the growth conditions and N inclusion greatly affects the Bi distribution in GaAs.

36 MATERIALS SCIENCE↗

Designing Ta C Virtual Substrates for Vertical Al x Ga 1 − x N Power Electronics Devices

Power electronics are critical for a sustainable energy future, playing a key role in electrification and integration of renewable energy sources into the grid. Advances in ultrawide band gap materials are needed to handle higher powers in smaller form factors while reducing electrical and thermal losses. High Al content Al x Ga 1 − x N is theoretically capable of meeting these demands, but its impact in power electronics has been severely restricted by a lack of substrates that can satisfy conductivity, lattice matching, and/or thermal expansion requirements. We demonstrate that electrically conductive Ta C can be used as a virtual substrate for Al x Ga 1 − x N heteroepitaxy. Scaleably sputtered Ta C grown on Al 2 O 3 , followed by high-temperature face-to-face annealing, produces a thin film Ta C template with an effective hexagonal lattice constant matched to Al 0.70 Ga 0.30 N . Annealing of the Ta C promotes recrystallization, significantly improving crystallinity and reducing crystalline defects from as-deposited columnar grains to a step-and-terrace surface morphology, enabling the subsequent growth of high-quality Al 0.70 Ga 0.30 N by molecular beam epitaxy. X-ray diffraction and scanning transmission electron microscopy confirm that the Al x Ga 1 − x N layer is heteroepitaxially aligned, strain-free, and lattice-matched, transitioning abruptly from Ta C to Al x Ga 1 − x N without intermediate phases. These results demonstrate Ta C virtual substrates as electrically conductive, lattice-matched, and thermally compatible templates for vertical Al x Ga 1 − x N devices that can meet the growing power needs of a sustainable energy future. Published by the American Physical Society 2024

36 MATERIALS SCIENCE↗

Temperature-Agnostic Pt/Au Ohmic Contacts on n -Type Gallium Nitride for Self-Aligned MOSFETs

Five alternative metals are investigated as ohmic contacts to n-GaN including Cr/Au, Mo/Au, Pt/Au, Pd/Au, and Ge/Au. Ti-based contacts are traditionally used for ohmic contacts on n-GaN. However, conventional Ti/Al/Ni/Au metallization is found to be incompatible with a self-aligned process for GaN trench MOSFETs due to wet etch restrictions. Therefore, an alternative metallization is needed that is unreactive to the etch chemistry used in the self-aligned process. Additionally, the contact should remain ohmic following anneal at 900 °C so that contact formation can precede the anneal required for p-dopant activation. Here, in the present work, an n-GaN bilayer, consisting of a thin heavily doped contact layer (n 0 = 1 × 10 20 cm −3 ) atop a thick lesser doped layer, is used to demonstrate ohmic contacts of alternative metals with low specific contact resistance and extended thermal budget. Cr/Au ohmic contacts are demonstrated up to anneal temperatures of 800 °C, an increase of 200 °C compared to the highest known reports for Cr/Au contacts on n-GaN. Pt/Au metallization is demonstrated as an ohmic contact to n-GaN for the first time and exhibits true temperature-agnostic behavior up to anneal temperatures of 900 °C with specific contact resistance that is near parity with Ti/Al/Ni/Au. The temperature-agnostic behavior of Pt/Au ohmic contacts on the n-GaN bilayer, in addition to chemical compatibility with the self-aligned process, positions Pt/Au contacts as a key enabling element for self-aligned trench MOSFETs on GaN.

Reilly, Kevin James [Sandia National Laboratories ↗

Characterization of a broadly specific cadaverine N-hydroxylase involved in desferrioxamine B biosynthesis in Streptomyces sviceus

N-hydroxylating flavin-dependent monooxygenases (FMOs) are involved in the biosynthesis of hydroxamate siderophores, playing a key role in microbial virulence. Herein, we report the first structural and kinetic characterization of a novel alkyl diamine N-hydroxylase DesB from Streptomyces sviceus (SsDesB). This enzyme catalyzes the first committed step in the biosynthesis of desferrioxamine B, a clinical drug used to treat iron overload disorders. X-ray crystal structures of the SsDesB holoenzyme with FAD and the ternary complex with bound NADP + were solved at 2.86 Å and 2.37 Å resolution, respectively, providing a structural view of the active site environment. SsDesB crystallized as a tetramer and the structure of the individual protomers closely resembles the structures of homologous N-hydroxylating FMOs from Erwinia amylovora (DfoA), Pseudomonas aeruginosa (PvdA), and Aspergillus fumigatus (SidA). Using NADPH oxidation, oxygen consumption, and product formation assays, kinetic parameters were determined for various substrates with SsDesB. SsDesB exhibited typical saturation kinetics with substrate inhibition at high concentrations of NAD(P)H as well as cadaverine. The apparent k cat values for NADPH in steady-state NADPH oxidation and oxygen consumption assays were 0.28 ± 0.01 s -1 and 0.24 ± 0.01 s -1 , respectively. However, in product formation assays used to measure the rate of N-hydroxylation, the apparent k cat for NADPH (0.034 ± 0.008 s -1 ) was almost 10-fold lower under saturating FAD and cadaverine concentrations, reflecting an uncoupled reaction, and the apparent NADPH K M was 33 ± 24 μM. Under saturating FAD and NADPH concentrations, the apparent k cat and K M for cadaverine in Csaky assays were 0.048 ± 0.004 s -1 and 19 ± 9 μM, respectively. SsDesB also N-hydroxylated putrescine, spermidine, and L-lysine substrates but not alkyl (di)amines that were branched or had fewer than four methylene units in an alkyl chain. These data demonstrate that SsDesB has wider substrate scope compared to other well-studied ornithine and lysine N-hydroxylases, making it an amenable biocatalyst for the production of desferrioxamine B, derivatives, and other N-substituted products.

59 BASIC BIOLOGICAL SCIENCES↗

Effects of 9.5 Years of Whole-Soil Warming on the Fatty Acid and n-Alkanes Composition in Bulk Soil and Density Fractions at Blodgett Experimental Forest, California, USA

Original data of molecular data (fatty acids and n-alkanes) including concentrations and calculated molecular proxies in a whole-soil warming experiment at the Blodgett Forest Research Station after 9.5 years of warming. The study site has a Mediterranean climate with annual average temperature of 12.5 ℃ and annual average precipitation of 1774 mm. The study site is characterized by a mesic Ultic Alfisol formed from granitic parent material, corresponding to a Dystric Cambisol under the World Reference Base for Soil Resources (WRB) classification system. Experimental warming is applied throughout the soil profile to a depth of 1 m using vertically embedded heating cables that raise soil temperature by 4 °C relative to ambient conditions. Soil samples were collected on 1 May 2023, after the experiment had been operating continuously for about 9.5 years since its initiation in January 2014.The data has been processed from raw data and cross-validated by other peers. The dataset includes: - Bulk_Fattyacid_9.5-year_Soil_Warming_Blodgett, California, USA: fatty acid concentrations and proxies including Carbon Preference Index (CPI) and Average Chain Length (ACL) of bulk soil organic carbon; - Fractions_Fattyacid_9.5-year_Soil_Warming_Blodgett, California, USA: fatty acid concentrations and proxies including CPI and ACL of free particulate organic matter (fPOM) and mineral-associated organic matter (MAOM); - Bulk_Alkanes_9.5-year_Soil_Warming_Blodgett, California, USA: n-alkanes concentrations and proxies including CPI and ACL of bulk soil organic carbon; - Fractions_Alkanes_9.5-year_Soil_Warming_Blodgett, California, USA: n-alkanes concentrations and proxies including CPI and ACL of fPOM and MAOM; - n-Alkanes_All_Monomer_Concentration_9.5-year_Soil_Warming_Blodgett, California, USA: concentration of all the n-alkane monomers identified and integrated for bulk soil, fPOM and MAOM; - Fattyacid_All_Monomer_Concentration_9.5-year_Soil_Warming_Blodgett, California, USA: concentration of all the fatty acid monomers including diacids identified and integrated for bulk soil, fPOM, and MAOM. All data are provided in CSV format and can be viewed using Microsoft Excel. We specifically look at fatty acids (FA) and n-alkanes in bulk soil, fPOM and MAOM and calculated molecular proxies such as CPI and ACL to understand the source of oragnic carbon (with ACL) and degree of decomposition (CPI) of each soil fraction. Due to lack of long-chain fatty acids (carbon number ⩾ 20), microorganism-derived organic carbon is characterized by shorter ACL in comparison to plant-derived organic carbon. Fresh SOC is characterized by even-over-odd dominance for fatty acids and odd-over-even dominance for n-alkanes. Therefore, CPI indicates whether soil organic carbon (SOC) represents fresh input (CPI > 10) or is strongly decomposed (close to 1). The research questions should be then, after 9.5-year warming: 1. whether the relative contribution between microorganism-derived and plant-derived SOC in each soil fraction? 2. whether fPOM became more decomposed whereas MAOM remained relatively persistent in each soil fraction across the soil depth?

Carbon↗

Spatial mapping of plant N-glycosylation cellular heterogeneity inside soybean root nodules provided insights into legume-rhizobia symbiosis

Although ubiquitously present, information on the function of complex N-glycan posttranslational modification in plants is very limited and it is often neglected. In this work, we adopted an enzyme-assisted matrix-assisted laser desorption/ionization mass spectrometry imaging strategy to visualize the distribution and identity of N-glycans in soybean root nodules at a cellular resolution. We additionally performed proteomics analysis to probe the potential correlation to proteome changes during symbiotic rhizobia-legume interactions. Our ion images reveal that intense N-glycosylation occurs in the sclerenchyma layer, and inside the infected cells within the infection zone, while morphological structures such as the cortex, uninfected cells, and cells that form the attachment with the root are less N-glycosylated. Notably, we observed different N-glycan profiles between soybean root nodules infected with wild type rhizobia and those infected with mutant rhizobia incapable of efficiently fixing atmospheric nitrogen. The majority of complex N-glycan structures, particularly those with characteristic Lewis-a epitopes, are overexpressed in the mutant nodules. Our proteomic results revealed that these glycans likely originated from proteins that maintain the redox balance crucial for proper nitrogen fixation, but also from enzymes involved in N-glycan and phenylpropanoid biosynthesis. These findings indicate possible involvement of Lewis-a glycans in these critical pathways during legume-rhizobia symbiosis.

59 BASIC BIOLOGICAL SCIENCES↗

AlN quasi-vertical Schottky barrier diode on AlN bulk substrate using Al 0.9 Ga 0.1 N current spreading layer

Abstract An aluminum nitride (AlN) quasi-vertical Schottky barrier diode (SBD) was fabricated on an AlN bulk substrate. An undoped AlN layer, a Si-doped Al 0.9 Ga 0.1 N current spreading layer and an AlN buffer layer were grown by plasma-enhanced molecular beam epitaxy. The epitaxial AlN layer was etched down to the n-Al 0.9 Ga 0.1 N layer to form an Ohmic contact. Ni/Au and V/Al/Ni/Au were deposited on the top AlN layer as Schottky contacts and on the exposed n-Al 0.9 Ga 0.1 N layer as Ohmic contacts, respectively. The Ohmic characteristics on the n-Al 0.9 Ga 0.1 N layer, capacitance–voltage ( C – V ) and current–voltage ( I – V ) characteristics of the AlN SBD were investigated.

Physics↗

n-Butanol or isobutanol as a value-added fuel additive to inhibit microbial degradation of stored gasoline

Biofouling of gasoline can occur during fuel storage caused by bacteria and fungi that form a biofilm at a fuel/water interface and that produce organic acids and sulfides. Fuel additives are applied to gasoline to prevent biofouling but are relatively expensive, are not always effective against biofilms, and do not contribute to the combustibility of gasoline. Bio-isobutanol is an approved, certified advanced biofuel and is added up to 16% ( v/v ) in gasoline blends “iBut16”; n-butanol blends are currently under review. Microorganisms are inhibited by n-butanol or isobutanol when the aqueous concentration reaches >2-3% (w/ v ). We determined that n-butanol partitions into the aqueous phase of a model gasoline/water system reaching concentrations of 42 g/L and up to 48 g/L from gasoline blends at 10% and 24% ( v/v ), respectively. Likewise, isobutanol blended in gasoline at 10% and 24% ( v/v ) partitioned into an aqueous phase at 45 g/L and 53 g/L, respectively. Several bacterial and fungal strains that originate from fuel storage tanks, or are known to be solvent tolerant, were evaluated for their potential growth in a range of n- and isobutanol concentrations. Growth rates for all strains tested were reduced by 40–100% relative to untreated controls in n- and isobutanol concentrations of 1.5 and 2.0% ( v/v ). No observable growth occurred for any of the microorganisms in solvent concentrations at 3.0% ( v/v ). T amphiphilic and chaotropic properties of n- or isobutanol help them inhibit microbial growth and could serve as effective biocides during fuel storage as well as being valuable fuel additives.

59 BASIC BIOLOGICAL SCIENCES↗

Divalent Titanium via Reductive N−C Coupling of a Ti IV Nitrido with π ‐Acids

The nitrido-ate complex [(PN) 2 Ti(N){μ 2 -K(OEt 2 )}] 2 (1) (PN − =(N-(2-P i Pr 2 -4-methylphenyl)-2,4,6-Me 3 C 6 H 2 ) reductively couples CO and isocyanides in the presence of DME or cryptand (Kryptofix222), to form rare, five-coordinate Ti II complexes having a linear cumulene motif, [K(L)][(PN) 2 Ti(NCE)] (E=O, L=Kryptofix222, (2); E=NAd, L=3 DME, (3); E=N t Bu, L=3 DME, (4); E=NAd, L=Kryptofix222, (5)). Oxidation of 2–5 with [Fc][OTf] afforded an isostructural Ti III center containing a neutral cumulene, [(PN) 2 Ti(NCE)] (E=O, (6); E=NAd (7), N t Bu (8)) and characterization by CW X-band EPR spectroscopy, revealed unpaired electron to be metal centric. Moreover, 1e − reduction of 6 and 7 in the presence of Kryptofix222cleanly reformed corresponding discrete Ti II complexes 2 and 5, which were further characterized by solution magnetization measurements and high-frequency and -field EPR (HFEPR) spectroscopy. Furthermore, oxidation of 7 with [Fc*][B(C 6 F 5 ) 4 ] resulted in a ligand disproportionated Ti IV complex having transoid carbodiimides, [(PN) 2 Ti(NCNAd) 2 ] (9). Comparison of spectroscopic, structural, and computational data for the divalent, trivalent, and tetravalent systems, including their 15 N enriched isotopomers demonstrate these cumulenes to decrease in order of backbonding as Ti II →Ti III →Ti IV and increasing order of π-donation as Ti II →Ti III →Ti IV , thus displaying more covalency in Ti III species. Lastly, we show a synthetic cycle whereby complex 1 can deliver an N-atom to CO and CNAd.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Unusual Electrical Conductivity Enhancement in Stable n‐Type Carbon Nanotube Networks

Organic molecule-doped n-type single-walled carbon nanotube (SWCNT) networks are promising candidates for advanced energy applications, such as flexible thermoelectrics and photovoltaics. Yet charge transport in n-type SWCNTs is limited by two factors: i) charge localization impeding inter-tube transport caused by disordered mesostructure of randomly oriented SWCNTs and ii) reduction of charge carrier concentration driven by oxidation. Herein, studied the relationship between the mesostructure and thermoelectric properties of n-type SWCNTs obtained by surfactant-functionalization and polymer-dopant grafting. Surprisingly, the electrical conductivity of the polymer-doped SWCNTs keeps increasing with increasing polymer content, even after the saturation of carrier concentration, resulting in 12x higher conductivity on polymer-doping compared to surfactant-functionalization. While hopping transport typically dominates in disordered systems, it is shown that a bridging effect from the polymer causes unusual band-like conduction in polymer-doped SWCNTs. Additionally, since surfactants are essential to prevent oxidation and retain n-type over a long duration, shows that SWCNTs obtained through a dual-functionalization strategy using both polymer-dopant and surfactant, demonstrates a long-term stable high n-type thermoelectric power factor, when the surfactant amount is carefully controlled. Besides thermoelectrics, the findings are of general interest to developing stable and conductive n-type SWCNTs for various energy and electronic applications.

carbon nanotubes↗

Exceptional Thermochemical Stability of Graphene on N-Polar GaN for Remote Epitaxy

In this study, we investigate the thermochemical stability of graphene on the GaN substrate for metal–organic chemical vapor deposition (MOCVD)-based remote epitaxy. Despite excellent physical properties of GaN, making it a compelling choice for high-performance electronic and light-emitting device applications, the challenge of thermochemical decomposition of graphene on a GaN substrate at high temperatures has obstructed the achievement of remote homoepitaxy via MOCVD. Our research uncovers an unexpected stability of graphene on N-polar GaN, thereby enabling the MOCVD-based remote homoepitaxy of N-polar GaN. Our comparative analysis of N- and Ga-polar GaN substrates reveals markedly different outcomes: while a graphene/N-polar GaN substrate produces releasable microcrystals (μCs), a graphene/Ga-polar GaN substrate yields nonreleasable thin films. We attribute this discrepancy to the polarity-dependent thermochemical stability of graphene on the GaN substrate and its subsequent reaction with hydrogen. Evidence obtained from Raman spectroscopy, electron microscopic analyses, and overlayer delamination points to a pronounced thermochemical stability of graphene on N-polar GaN during MOCVD-based remote homoepitaxy. Molecular dynamics simulations, corroborated by experimental data, further substantiate that the thermochemical stability of graphene is reliant on the polarity of GaN, due to different reactions with hydrogen at high temperatures. In conclusion, based on the N-polar remote homoepitaxy of μCs, the practical application of our findings was demonstrated in fabrication of flexible light-emitting diodes composed of p–n junction μCs with InGaN heterostructures.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Tuning the thermal activation atmosphere breaks the activity–stability trade-off of Fe–N–C oxygen reduction fuel cell catalysts

Fe–N–C catalysts are the most promising platinum group metal-free oxygen-reduction catalysts, but they suffer from a low density of active metal sites and the so-called activity–stability trade-off. Here we report an Fe–N–C catalyst prepared by adding an optimal amount of H 2 to the traditional inert atmosphere during the thermal activation. The presence of H 2 significantly increases the total density of FeN 4 sites, suppressing the unstable pyrrolic-N-coordinated S1 sites and favouring the stable pyridinic-N-coordinated S2 sites with shortened Fe–N bond lengths. Here, we propose that the intrinsically stable S2 sites are probably arranged in well-graphitized carbon layers, and the S1 sites exist in less-graphitized carbon. H 2 could remove unstable S1 sites and retain stable S2 sites during the pyrolysis to break the challenging activity–stability trade-off. The Fe–N–C catalyst in membrane electrode assemblies maintains a current density of 67 mA cm -2 at 0.8 V (H 2 –air) after 30,000 voltage cycles (0.60 to 0.95 V under H 2 –air), achieving encouraging durability and performance simultaneously.

25 ENERGY STORAGE↗

The very high n Rydberg series of Ar 16+ in Alcator C-Mod tokamak plasmas

We report x-ray transitions of the very high-n Rydberg series in Ar 16+ have been observed from Alcator C-Mod tokamak plasmas. Individual emission lines up to 1s16p-1s 2 have been resolved and the central chord line brightnesses with principal quantum number n between 7 and 16 are generally found to decay as 1/n α , with α slightly larger than 3. In the plasma periphery, emission from 1s9p-1s 2 and 1s10p-1s 2 are found to be significantly enhanced relative to this decrease, indicative of selected population of these levels through charge exchange between background neutral deuterium in the ground state and Ar 17+ . An unresolved feature between the wavelengths of 1s27p-1s 2 and 1s30p-1s 2 is also present, which arises through charge exchange with neutral deuterium in the n* = 3 excited state. The brightnesses of transitions populated by charge exchange are spatially up/down asymmetric, with an excess on the side of the magnetic surface X-point. The relative brightness of the unresolved very high-n feature compared to 1s7p-1s 2 is found to increase with electron temperature and decrease with electron density. Simulations of line emission just on the long wavelength side of the Ar 16+ ionization limit indicate that the principal quantum number decay exponent is closer to α = 4 at very high n. The brightness dependence on n below 16 is in excellent agreement with calculations from the flexible atomic code package.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

C{sub 2}N{sub 2} Vertical Profile in Titan’s Stratosphere

In this paper, we present the first measurements of the vertical distribution of cyanogen (C{sub 2}N{sub 2}) in Titan’s lower atmosphere at different latitudes and seasons, using Cassini’s Composite Infrared Spectrometer far-infrared data. We also study the vertical distribution of three other minor species detected in our data: methylacetylene (C{sub 3}H{sub 4}), diacetylene (C{sub 4}H{sub 2}), and H{sub 2}O, in order to compare them to C{sub 2}N{sub 2}, but also to get an overview of their seasonal and meridional variations in Titan’s lower stratosphere from 85 km to 225 km. We measured an average volume mixing ratio of C{sub 2}N{sub 2} of 6.2±0.8×10{sup −11} at 125 km at the equator, but poles exhibit a strong enrichment in C{sub 2}N{sub 2} (up to a factor 100 compared to the equator), greater than what was measured for C{sub 3}H{sub 4} or C{sub 4}H{sub 2}. Measuring C{sub 2}N{sub 2} profiles provides constraints on the processes controlling its distribution, such as bombardment by Galactic Cosmic Rays which seem to have a smaller influence on C{sub 2}N{sub 2} than predicted by photochemical models.

79 ASTRONOMY AND ASTROPHYSICS↗