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At least 577 records · Page 32
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Solid state lighting component

An LED component according to the present invention comprising an array of LED chips mounted on a submount with the LED chips capable of emitting light in response to an electrical signal. The array can comprise LED chips emitting at two colors of light wherein the LED component emits light comprising the combination of the two colors of light. A single lens is included over the array of LED chips. The LED chip array can emit light of greater than 800 lumens with a drive current of less than 150 milli-Amps. The LED chip component can also operate at temperatures less than 3000 degrees K. In one embodiment, the LED array is in a substantially circular pattern on the submount.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Prediction of L70 Life and Assessment of Color Shift for Solid-State Lighting Using Kalman Filter and Extended Kalman Filter-Based Models

Solid-state lighting (SSL) luminaires containing light-emitting diodes (LEDs) have the potential of seeing excessive temperatures when being transported across country or being stored in nonclimate controlled warehouses. They are also being used in outdoor applications in desert environments that see little or no humidity but will experience extremely high temperatures during the day. This makes it important to increase our understanding of what effects high temperature exposure for a prolonged period of time will have on the usability and survivability of these devices. Traditional light sources “burn out” at the end of life. For an incandescent bulb, the lamp life is defined by B50 life. However, the LEDs have no filament to “burn“. The LEDs continually degrade, and the light output decreases eventually below useful levels causing failure. Currently, the TM-21 test standard is used to predict the L70 life of LEDs from LM-80 test data. Several failure mechanisms may be active in a LED at a single time, causing lumen depreciation. The underlying TM-21 model may not capture the failure physics in presence of multiple failure mechanisms. The correlation of lumen maintenance with underlying physics of degradation at system level is needed. In this paper, Kalman filter (KF) and extended Kalman Filters (EKF) have been used to develop a 70% Lumen Maintenance Life Prediction Model for LEDs used in SSL luminaires. Ten-thousand-hour LM-80 test data for various LEDs are used for model development. System state at each future time has been computed based on the state space at preceding time step, system dynamics matrix, control vector, control matrix, measurement matrix, measured vector, process noise, and measurement noise. The future state of the lumen depreciation are estimated based on a second-order Kalman Filter model and a Bayesian Framework. The measured state variable are related to the underlying damage using physics-b- sed models. Life prediction of L70 life for the LEDs used in SSL luminaires from KF- and EKF-based models are also compared with the TM-21 model predictions and experimental data.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2017

PoE Lighting System Energy Reporting Study, Part 1

The replacement of today’s lighting infrastructure with LED products offers the potential for future connected lighting systems (CLS) that could become a data-collection platform that enables greater energy savings in buildings and cities. Such connected lighting systems can not only drastically improve the energy performance of lighting and other building systems, but also enable a wide array of services, benefits, and revenue streams that would enhance the value of lighting systems. As LED technology matures, maximizing the energy savings from connected LED lighting systems will become increasingly dependent on successful integration into the built environment. That’s why the DOE SSL Program is working closely with industry to identify and collaboratively address the technology development needs of CLS. For several years now, a growing number of wired and wireless network communication technologies have been integrated into commercially available lighting devices. While most commercially available lighting devices continue to require line-voltage AC power, a few new low-voltage DC technologies have also been introduced into the market as options for powering LED devices. More recently, a technology that has long supported non-lighting applications has become increasingly viable for LED lighting. This approach, whereby a single Ethernet cable is used to both provide low-voltage DC power and enable network communication, is generally referred to as Power over Ethernet (PoE). Whereas wireless solutions offer reduced control system installation cost relative to traditional low-voltage alternatives, PoE technology can offer additional cost savings by transmitting power and communications over the same low-voltage cable, while also reducing demand for wireless bandwidth. Although PoE technology was introduced at the start of this century, it was initially of limited applicability to lighting systems to power transmission limits for available Ethernet cabling. However, PoE has become increasingly viable for lighting applications in recent years as Ethernet cabling technology has evolved and relevant standards and specifications have adapted. These gains have been compounded by ongoing improvements to the luminous efficacy of LED technologies, increasing the number of LED luminaires suitable for use with Ethernet switches capable of sourcing PoE. As a result, a growing number of manufacturers have introduced PoE lighting systems in recent years. Connected lighting systems that can report their own energy consumption can deliver increased energy savings over conventional lighting solutions by facilitating data-driven energy management. PoE technology has the potential to be key in bringing this capability to mainstream lighting applications. This study is the first of a multi-part effort to explore the energy reporting capability of commercially-marketed PoE connected lighting systems. It first provides a brief background on the development of the various PoE technologies, ranging from standards-based to proprietary, and illustrates the convergence of PoE power sourcing capabilities and LED luminaire power requirements. It then classifies PoE system devices in relationship to how they are used in systems—introducing new terminology as needed—and briefly describes different PoE system architectures implemented by various lighting manufacturers. A discussion of existing standards and specifications that address energy reporting is provided, and existing test setups and methods germane to characterizing PoE system energy reporting performance are reviewed.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2016

Development Impact Assessment Highlights Co-benefits of GHG Mitigation Actions

This EC-LEDS document describes the Development Impact Assessment (DIA) process that explores interactions between development goals and the low emission development strategies. DIA aims to support informed decision-making by considering how policies and programs intended to meet one goal may impact other development priorities. Enhancing Capacity for Low Emission Development Strategies (EC-LEDS) is a flagship U.S. government-led effort that assists countries in developing and implementing LEDS. The program enhances partner country efforts by providing targeting technical assistance and building a shared global knowledge base on LEDS. is a flagship U.S. government-led effort that assists countries in developing and implementing LEDS. The program enhances partner country efforts by providing targeting technical assistance and building a shared global knowledge base on LEDS.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2017

Lifetime predictions for dimmable two-channel drivers for color tuning luminaires

Two-channel tunable white lighting (TWL) systems represent the next wave of solid-state lighting (SSL) systems and promise flexibility in light environment while maintaining the high reliability and luminous efficacy expected with SSL devices. TWL systems utilize LED assemblies consisting of two different LED spectra (i.e., often a warm white assembly and a cool white assembly) that are integrated into modules. While these systems provide the ability to adjust the lighting spectrum to match the physiology needs of the task at hand, they also are a potentially more complex lighting system from a performance and reliability perspective. We report an initial study on the reliability performance of such lighting systems including an examination of the lumen maintenance and chromaticity stability of warm white and cool white LED assemblies and the multi-channel driver that provides power to the assemblies. Accelerated stress tests including operational bake tests conducted at 75°C and 95°C were used to age the LED modules, while more aggressive temperature and humidity tests were used for the drivers in this study. Small differences in the performance between the two LED assemblies were found and can be attributed to the different phosphor chemistries. The lumen maintenances of both LED assemblies were excellent. The warm white LED assemblies were found to shift slightly in the green color direction over time while the cool white LED assemblies shifted slightly in the yellow color direction. The net result of these chromaticity shifts is a small, barely perceptible reduction in the tuning range after 6,000 hours of exposure to an accelerating elevated temperature of 75°C.

Chromaticity↗
DOE OSTI2022

Design and optimization of high temperature optocouplers as galvanic isolation

The commercial InGaN-based (blue and green) and AlGaInP-based (red) multiple quantum well (MQW) lighting emitting diodes (LEDs) were studied in a wide range of temperatures up to 800 K for their light emission and detection (i.e., LEDs operated under reverse bias as photodiodes (PDs)) characteristics. The results indicate the feasibility of integrating a pair of selected LEDs to fabricate high temperature (HT) optocouplers, which can be utilized as galvanic isolation to replace the bulky isolation transforms in the high-density power modules. A detailed study on LEDs and PDs were performed. The external quantum efficiency (EQE) of the LED and PDs were calculated. Higher relative external quantum efficiency (EQE) and lower efficiency droops with temperatures are obtained from the blue and green LEDs for display compared with the blue one for lighting and red LED for display. The blue for lighting and red for display devices show superior responsivity, specific detectivity (D*), and EQE compared with blue and green for display when operated as PDs. The results suggest that red LED devices for display can be used to optimize HT optocouplers due to the highest wavelength overlapping compared with others.

42 ENGINEERING↗
DOE OSTI2014

Electrical current leakage and open-core threading dislocations in AlGaN-based deep ultraviolet light-emitting diodes

Electrical current transport through leakage paths in AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) and their effect on LED performance are investigated. Open-core threading dislocations, or nanopipes, are found to conduct current through nominally insulating Al{sub 0.7}Ga{sub 0.3}N layers and limit the performance of DUV-LEDs. A defect-sensitive phosphoric acid etch reveals these open-core threading dislocations in the form of large, micron-scale hexagonal etch pits visible with optical microscopy, while closed-core screw-, edge-, and mixed-type threading dislocations are represented by smaller and more numerous nanometer-scale pits visible by atomic-force microscopy. The electrical and optical performances of DUV-LEDs fabricated on similar Si-doped Al{sub 0.7}Ga{sub 0.3}N templates are found to have a strong correlation to the density of these nanopipes, despite their small fraction (<0.1% in this study) of the total density of threading dislocations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

(11-22) semipolar InGaN emitters from green to amber on overgrown GaN on micro-rod templates

We demonstrate semipolar InGaN single-quantum-well light emitting diodes (LEDs) in the green, yellow-green, yellow and amber spectral region. The LEDs are grown on our overgrown semipolar (11-22) GaN on micro-rod array templates, which are fabricated on (11-22) GaN grown on m-plane sapphire. Electroluminescence measurements on the (11-22) green LED show a reduced blue-shift in the emission wavelength with increasing driving current, compared to a reference commercial c-plane LED. The blue-shifts for the yellow-green and yellow LEDs are also significantly reduced. All these suggest an effective suppression in quantum confined Stark effect in our (11-22) LEDs. On-wafer measurements yield a linear increase in the light output with the current, and external quantum efficiency demonstrates a significant improvement in the efficiency-droop compared to a commercial c-plane LED. Electro-luminescence polarization measurements show a polarization ratio of about 25% in our semipolar LEDs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Characterization of electrically-active defects in ultraviolet light-emitting diodes with laser-based failure analysis techniques

Laser-based failure analysis techniques demonstrate the ability to quickly and non-intrusively screen deep ultraviolet light-emitting diodes (LEDs) for electrically-active defects. In particular, two laser-based techniques, light-induced voltage alteration and thermally-induced voltage alteration, generate applied voltage maps (AVMs) that provide information on electrically-active defect behavior including turn-on bias, density, and spatial location. Here, multiple commercial LEDs were examined and found to have dark defect signals in the AVM indicating a site of reduced resistance or leakage through the diode. The existence of the dark defect signals in the AVM correlates strongly with an increased forward-bias leakage current. This increased leakage is not present in devices without AVM signals. Transmission electron microscopy analysis of a dark defect signal site revealed a dislocation cluster through the pn junction. The cluster included an open core dislocation. Even though LEDs with few dark AVM defect signals did not correlate strongly with power loss, direct association between increased open core dislocation densities and reduced LED device performance has been presented elsewhere [M. W. Moseley et al., J. Appl. Phys. 117, 095301 (2015)].

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Multicolor fluorescent light-emitting diodes based on cesium lead halide perovskite quantum dots

High quantum yield, narrow full width at half-maximum and tunable emission color of perovskite quantum dots (QDs) make this kind of material good prospects for light-emitting diodes (LEDs). However, the relatively poor stability under high temperature and air condition limits the device performance. To overcome this issue, the liquid-type packaging structure in combination with blue LED chip was employed to fabricate the fluorescent perovskite quantum dot-based LEDs. A variety of monochromatic LEDs with green, yellow, reddish-orange, and red emission were fabricated by utilizing the inorganic cesium lead halide perovskite quantum dots as the color-conversion layer, which exhibited the narrow full width at half-maximum (<35 nm), the relatively high luminous efficiency (reaching 75.5 lm/W), and the relatively high external quantum efficiency (14.6%), making it the best-performing perovskite LEDs so far. Compared to the solid state LED device, the liquid-type LED devices exhibited excellent color stability against the various working currents. Furthermore, we demonstrated the potential prospects of all-inorganic perovskite QDs for the liquid-type warm white LEDs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2013

L70 life prediction for solid state lighting using Kalman Filter and Extended Kalman Filter based models

Solid-state lighting (SSL) luminaires containing light emitting diodes (LEDs) have the potential of seeing excessive temperatures when being transported across country or being stored in non-climate controlled warehouses. They are also being used in outdoor applications in desert environments that see little or no humidity but will experience extremely high temperatures during the day. This makes it important to increase our understanding of what effects high temperature exposure for a prolonged period of time will have on the usability and survivability of these devices. Traditional light sources “burn out” at end-of-life. For an incandescent bulb, the lamp life is defined by B50 life. However, the LEDs have no filament to “burn”. The LEDs continually degrade and the light output decreases eventually below useful levels causing failure. Presently, the TM-21 test standard is used to predict the L70 life of LEDs from LM-80 test data. Several failure mechanisms may be active in a LED at a single time causing lumen depreciation. The underlying TM-21 Model may not capture the failure physics in presence of multiple failure mechanisms. Correlation of lumen maintenance with underlying physics of degradation at system-level is needed. In this paper, Kalman Filter (KF) and Extended Kalman Filters (EKF) have been used to develop a 70-percent Lumen Maintenance Life Prediction Model for LEDs used in SSL luminaires. Ten-thousand hour LM-80 test data for various LEDs have been used for model development. System state at each future time has been computed based on the state space at preceding time step, system dynamics matrix, control vector, control matrix, measurement matrix, measured vector, process noise and measurement noise. The future state of the lumen depreciation has been estimated based on a second order Kalman Filter model and a Bayesian Framework. The measured state variable has been related to the underlying damage using physics-based models. Life prediction of L70 life for the LEDs used in SSL luminaires from KF and EKF based models have been compared with the TM-21 model predictions and experimental data.

Lall, Pradeep↗
DOE OSTI2026

Solutions to Droop and the Green Gap by Novel Carrier Injection

Long-wavelength (green, yellow, red) visible light-emitting diodes (LEDs) have historically been inefficient compared to blue light-emitters in the III-nitrides. This is due to many factors, including poor material quality due to the low growth temperatures required for high Incomposition InGaN quantum wells (QWs), and the polar nature of the III-nitride crystal structure. Spontaneous and piezoelectric polarization in the III-nitrides causes enhanced quantum-confined Stark effect (QCSE), which spatially separates electrons and holes and reduces radiative recombination (ie: light output) from the devices. Polarization in the crystal also induces additional potential barriers that electrons and holes must cross over before entering the QWs where they can recombine to emit light. Both of these polarization effects worsen as emission wavelength increases, making blue III-nitride LEDs are the most efficient and red III-nitride LEDs the least efficient. The focus of this project has been solving the latter polarization-related issue through the implementation of V-defects in long wavelength LEDs. V-defects are morphological defects which are commonly observed in c-plane III-nitrides. They are observed as hexagonal pyramid-shaped depressions on the c-plane surface, with six semipolar sidewalls. They typically form at the apex of threading dislocations (TDs) under conditions of kinetically-limited growth and low growth-temperature. They were initially thought to be detrimental to LED performance and much early work focused on eliminating them entirely from III-nitride devices. However, over the past decade work has emerged that indicate that they can improve LED performance by allowing electrons and holes to bypass the polarization-induced barriers present in the c-plane and directly enter the QWs of an LED. This is due to the semipolar nature of the V-defect sidewall: these sidewalls are thin and lack the polarization-induced barriers which prevent carriers easily moving between layers. V-defects have since been determined to be an efficient avenue by which to inject electrons and holes into the c-plane QWs where they can recombine to emit light. Throughout this project we have explored lateral injection through a variety of methods: simulation (Task 2), epitaxial growth of V-defect and non-V-defect LEDs (Tasks 1, 3, 4, 5, 6), and advanced characterization methods (Task 7). All tasks have been completed. A description of each task completed follows from this section.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
NASA NTRS1997

Anatomical features of pepper plants (Capsicum annuum L.) grown under red light-emitting diodes supplemented with blue or far-red light

Pepper plants (Capsicum annuum L. cv., Hungarian Wax) were grown under metal halide (MH) lamps or light-emitting diode (LED) arrays with different spectra to determine the effects of light quality on plant anatomy of leaves and stems. One LED (660) array supplied 90% red light at 660 nm (25nm band-width at half-peak height) and 1% far-red light between 700-800nm. A second LED (660/735) array supplied 83% red light at 660nm and 17% far-red light at 735nm (25nm band-width at half-peak height). A third LED (660/blue) array supplied 98% red light at 660nm, 1% blue light between 350-550nm, and 1% far-red light between 700-800nm. Control plants were grown under broad spectrum metal halide lamps. Plants were gron at a mean photon flux (300-800nm) of 330 micromol m-2 s-1 under a 12 h day-night photoperiod. Significant anatomical changes in stem and leaf morphologies were observed in plants grown under the LED arrays compared to plants grown under the broad-spectrum MH lamp. Cross-sectional areas of pepper stems, thickness of secondary xylem, numbers of intraxylary phloem bundles in the periphery of stem pith tissues, leaf thickness, numbers of choloplasts per palisade mesophyll cell, and thickness of palisade and spongy mesophyll tissues were greatest in peppers grown under MH lamps, intermediate in plants grown under the 660/blue LED array, and lowest in peppers grown under the 660 or 660/735 LED arrays. Most anatomical features of pepper stems and leaves were similar among plants grown under 660 or 660/735 LED arrays. The effects of spectral quality on anatomical changes in stem and leaf tissues of peppers generally correlate to the amount of blue light present in the primary light source.

NASA Discipline Life Support Systems↗
NASA NTRS1995

Growth and photomorphogenesis of pepper plants under red light-emitting diodes with supplemental blue or far-red lighting

Light-emitting diodes (LEDs) are a potential irradiation source for intensive plant culture systems and photobiological research. They have small size, low mass, a long functional life, and narrow spectral output. In this study, we measured the growth and dry matter partitioning of 'Hungarian Wax' pepper (Capsicum annuum L.) plants grown under red LEDs compared with similar plants grown under red LEDs with supplemental blue or far-red radiation or under broad spectrum metal halide (MH) lamps. Additionally, we describe the thermal and spectral characteristics of these sources. The LEDs used in this study had a narrow bandwidth at half peak height (25 nm) and a focused maximum spectral output at 660 nm for the red and 735 nm for the far-red. Near infrared radiation (800 to 3000 nm) was below detection and thermal infrared radiation (3000 to 50,000 nm) was lower in the LEDs compared to the MH source. Although the red to far-red ratio varied considerably, the calculated phytochrome photostationary state (phi) was only slightly different between the radiation sources. Plant biomass was reduced when peppers were grown under red LEDs in the absence of blue wavelengths compared to plants grown under supplemental blue fluorescent lamps or MH lamps. The addition of far-red radiation resulted in taller plants with greater stem mass than red LEDs alone. There were fewer leaves under red or red plus far-red radiation than with lamps producing blue wavelengths. These results indicate that red LEDs may be suitable, in proper combination with other wavelengths of light, for the culture of plants in tightly controlled environments such as space-based plant culture systems.

NASA Discipline Life Support Systems↗
NASA NTRS2011

Disinfection of Spacecraft Potable Water Systems by Photocatalytic Oxidation Using UV-A Light Emitting Diodes

Ultraviolet (UV) light has long been used in terrestrial water treatment systems for photodisinfection and the removal of organic compounds by several processes including photoadsorption, photolysis, and photocatalytic oxidation/reduction. Despite its effectiveness for water treatment, UV has not been explored for spacecraft applications because of concerns about the safety and reliability of mercury-containing UV lamps. However, recent advances in ultraviolet light emitting diodes (UV LEDs) have enabled the utilization of nanomaterials that possess the appropriate optical properties for the manufacture of LEDs capable of producing monochromatic light at germicidal wavelengths. This report describes the testing of a commercial-off-the-shelf, high power Nichia UV-A LED (250mW A365nnJ for the excitation of titanium dioxide as a point-of-use (POD) disinfection device in a potable water system. The combination of an immobilized, high surface area photocatalyst with a UV-A LED is promising for potable water system disinfection since toxic chemicals and resupply requirements are reduced. No additional consumables like chemical biocides, absorption columns, or filters are required to disinfect and/or remove potentially toxic disinfectants from the potable water prior to use. Experiments were conducted in a static test stand consisting of a polypropylene microtiter plate containing 3mm glass balls coated with titanium dioxide. Wells filled with water were exposed to ultraviolet light from an actively-cooled UV-A LED positioned above each well and inoculated with six individual challenge microorganisms recovered from the International Space Station (ISS): Burkholderia cepacia, Cupriavidus metallidurans, Methylobacterium fujisawaense, Pseudomonas aeruginosa, Sphingomonas paucimobilis and Wautersia basilensis. Exposure to the Nichia UV-A LED with photocatalytic oxidation resulted in a complete (>7-log) reduction of each challenge bacteria population in <180 minutes of contact time. With continued advances in the design and manufacture of UV-A LEDs and semi-conducting photocatalysts, LED activated photochemical process technology promises to extend its application to spacecraft environmental systems.

Birmele, Michele N.↗
DOE OSTI2019

Configurable luminaire

An array of LEDs is supported by a support mechanism that both supports conductors leading to the LEDs and sinks heat from the LEDs. The support mechanism may be a transparent heat-conducting sheet or an array of cantilevered arms at different angles that support the LEDs and sink heat. This reduces the blockage of light. The LEDs are positioned generally in the focal plane of an array of concave mirrors that collimate the light. The LEDs and array of mirrors are translatable with respect to one another to steer the aggregate light beam to customize the emission. In another embodiment, multiple LEDs are positioned over each mirror in the mirror array, and the combination of LEDs illuminated over each mirror is used to steer the aggregate light beam from the luminaire.

42 ENGINEERING↗
DOE OSTI2019

Electron Emission Spectroscopy of III-N Semiconductor Devices

Gallium nitride (GaN) has proven to be a semiconductor material system that is ideal for the development of lasers and light-emitting diodes (LEDs) with emission wavelengths spanning the visible spectrum. In particular, the prevalence of white LEDs has been made possible by pairing GaN-based optoelectronic devices emitting at 450 nm (blue) with phosphors for down-conversion. The efficiency of these devices, although better than alternatives, is limited at high current densities (efficiency droop), elevated temperatures (thermal droop) and is markedly worse at longer wavelengths. Understanding the physical origins of these efficiency problems can provide a pathway for engineering solutions to these long-standing issues. Despite extensive efforts to improve and understand these limitations, the unambiguous identification of these efficiency loss mechanisms has remained an open topic of research. Most studies of the efficiency loss mechanisms in GaN LEDs rely on an indirect measurement of carrier dynamics by analysis of the emitted light. The inadequacy of these indirect measurements has motivated the development of an electron spectroscopy technique, capable of directly probing several electron transport and recombination mechanisms in GaN-based optoelectronic devices. In 2013, electron emission spectroscopy (EES) was used for the first time to measure high energy electrons generated via Auger recombination in the active region of an LED. This result brought an end to the longstanding controversy over the causes for efficiency droop at high carrier densities. Our analysis of the kinetic energy of vacuum emitted electrons from GaN-based LEDs xiii has unambiguously identified carrier overshoot as the dominant mechanism responsible for thermal droop. Control experiments from p-n diodes show evidence for a previously unknown hot carrier generating process, likely trap-assisted Auger recombination (TAAR) occurring in AlGaN/GaN barrier heterostrucutres. We also discuss the possibility of TAAR occurring in InGaN quantum wells through examination of low-efficiency LEDs grown by molecular beam epitaxy. Finally, we discuss preliminary EES results regarding long wavelength GaN LEDs as well as the first EES measurements from semipolar ($20\bar2\bar1$) GaN LEDs and p-n diodes.

light emitting diodes, solid state lighting↗
DOE OSTI2025

Solution‐Processed Spin‐Polarized Light‐Emitting Diodes of Colloidal Quantum Wells and Magnetic Nanoparticles

Electrical injection of spin-polarized carriers into semiconductors enables circularly-polarized emission from spin-polarized light-emitting diodes (spin-LEDs). The incredible level of tunability of magnetic and electronic properties in colloidal nanocrystals offers unprecedented opportunities for the modulation of polarization of light in solution-processed spin-LEDs based on magnetic nanoparticles unlike epitaxially grown spin-LEDs restricted by a very limited range of materials for their exploitation, and solution-processed spin-LEDs based on chiral molecules, which do not allow the modulation of polarization in general. Here, it is shown that electrical injection of spin-polarized electrons from magnetic Fe 3 O 4 nanoparticles into CdSe/CdZnS core/shell colloidal quantum wells (CQWs) in solution-processed LEDs that allows for polarization modulation of electroluminescence. In this structure, a monolayer of face-down oriented CQWs is deposited as an active layer to avoid polarization losses due to the hopping of the electrons between the CQWs before the radiative recombination process. In this solution-processed spin-LED, the circular polarization reaches 4.5% at 3 K and survives up to 100 K. A net circular polarization is observed at zero magnetic field up to 100 K because of the remnant magnetization of the Fe 3 O 4 nanoparticles. This new colloidal spin-LED architecture presents significant prospects for future solution-processed advanced opto-spintronic devices.

circularly polarized electroluminescence↗