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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 577 records · Page 32
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

In Situ TEM Study of Radiation Resistance of Metallic Glass–Metal Core–Shell Nanocubes

Radiation damage can cause significantly more surface damage in metallic nanostructures than bulk materials. Structural changes from displacement damage compromise the performance of nanostructures in radiation environments such as nuclear reactors and outer space, or used in radiation therapy for biomedical treatments. As such, it is important to develop strategies to prevent this from occurring if nanostructures are to be incorporated into these applications. In this work, in situ transmission electron microscope ion irradiation was used to investigate whether a metallic glass (MG) coating mitigates sputtering and morphological changes in metallic nanostructures. Dislocation-free Au nanocubes and Au nanocubes coated with a Ni–B MG were bombarded with 2.8 MeV Au 4+ ions. The formation of internal defects in bare Au nanocubes was observed at a fluence of 7.5 × 10 11 ions/cm 2 (0.008 dpa), and morphological changes such as surface roughening, rounding of corners, and formation of nanofilaments began at 4 × 10 12 ions/cm 2 (0.04 dpa). In contrast, the Ni–B MG-coated Au nanocubes (Au@NiB) showed minimal morphological changes at a fluence of 1.9 × 10 13 ions/cm 2 (0.2 dpa). Finally, the MG coating maintains its amorphous nature under all irradiation conditions investigated.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Role of mechanical stress localizations on the radiation hardness of AlGaN/GaN high electron mobility transistors

Multi-material, multi-layered systems such as AlGaN/GaN high electron mobility transistors (HEMTs) contain residual mechanical stresses that arise from sharp contrasts in device geometry and materials parameters. These stresses, which can be either tensile or compressive, are difficult to detect and eliminate because of their highly localized nature. We propose that their high-stored internal energy makes potential sites for defect nucleation sites under radiation, particularly if their locations coincide with the electrically sensitive regions of a transistor. In this study, we validate this hypothesis with molecular dynamic simulation and experiments exposing both pristine and annealed HEMTS to 2.8 MeV Au +3 irradiation. Our unique annealing process uses mechanical momentum of electrons, also known as the electron wind force (EWF) to mitigate the residual stress at room temperature. High-resolution transmission electron microscopy and cathodoluminescence spectra reveal the reduction of point defects and dislocations near the two-dimensional electron gas region of EWF-treated devices compared to pristine devices. The EWF-treated HEMTs showed relatively higher resilience with approximately 10% less degradation of drain saturation current and ON-resistance and 5% less degradation of peak transconductance. Both mobility and carrier concentration of the EWF-treated devices were less impacted compared to the pristine devices. Our results suggest that the lower density of nanoscale stress localization contributed to the improved radiation tolerance of the EWF-treated devices. Intriguingly, the EWF is found to modulate the defect distribution by moving the defects to electrically less sensitive regions in the form of dislocation networks, which act as sinks for the radiation induced defects and this assisted faster dynamic annealing.

AlGaN/GaN HEMTs↗
DOE OSTI2022

Understanding effects of chemical complexity on helium bubble formation in Ni-based concentrated solid solution alloys based on elemental segregation measurements

Here, helium bubble formation and swelling were systematically studied in Ni-based concentrated solid solution alloys containing different numbers and types of elements. Our microscopy analysis showed that although increasing the alloy chemical complexity helps suppress bubble formation in general, there is no monotonic relationship between the bubble growth rate and the number of alloying elements. Certain elements (e.g., Fe and Pd) are more effective in suppressing bubble growth than others (e.g., Cr and Mn). Atom probe tomography was applied to accurately measure elemental segregation around bubbles, revealing unique effects of certain alloying elements on vacancy migration towards bubbles. More specifically, the high vacancy mobility via Cr sites leads to a large vacancy flux and an increased bubble size, while the high degree of atomic size mismatch introduced by Pd helps deflect vacancy flow away from bubbles and decrease the amount of swelling. The effects identified in this study provide new strategies to design concentrated solid solutions with superior resistance to swelling.

36 MATERIALS SCIENCE↗
DOE OSTI2023

First-Principles Studies of Tritium Species Dissociability & Diffusivity Across the Interface of Nickel-Plated Zircaloy-4

Zirconium (Zr) and its alloys (Zircaloy-4) are widely used in nuclear reactors due to their low neutron adsorption cross-section and excellent corrosion resistance. In tritium-producing burnable absorber rods (TPBARs), the metal getter tube located between the cladding and the γ-LiAlO 2 pellets is composed of nickel (Ni)-plated Zircaloy-4, which is used to capture tritium ( 3 H) species (mainly 3 H 2 and 3 H 2 O) generated from γ-LiAlO 2 pellets during irradiation. The 3 H-related products transfer to the surface of metal Ni upon adsorption and dissociation to form new 3 H species and diffuse into the Zircaloy-4 getters to form metal hydrides (Zr 3 H x ). Therefore, exploring 3 H species ( 3 H 2 , 3 H 2 O) dissociation on the surface of Ni and diffusion across the interface of Ni-plated Zircaloy-4 getters can provide a better understanding of 3H species formation and transport from pellets into the getters.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Radiation Tolerance of Nanoporous Gadolinium Titanate

Defect sinks play a crucial role in reducing radiation-induced damage accumulation, but their effectiveness varies. This study directly compares the efficacy of grain boundaries and pores (free surfaces) in gadolinium titanate (Gd 2 Ti 2 O 7 ) using in situ ion irradiation transmission electron microscopy (TEM). A unique sample configuration is developed, where each of the three distinct regions, each containing only one primary sink of interest, is in the same TEM lamella for simultaneous irradiation. Regular assessments of crystallinity in each region via nanobeam electron diffraction show that, at both room temperature and 600°C, free surface (pore) defect sinks are more effective than grain boundaries in capturing radiation-induced defects and delaying the onset of amorphization. These findings have significant implications for further microstructural engineering and the design of radiation-resistant microstructures.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Enhancing the performance of solvent-borne poly(ethyl methacrylate) coatings for high-power laser applications via low-temperature drying

Organic polymers are a versatile class of materials employed in a broad range of optical coating applications. However, their use as coatings in high-power laser applications, particularly in the UV spectral region, has been limited in scope due to their relatively low laser-induced damage thresholds (LIDTs), which decrease further with exposure to multiple pulses. This study explores the effect of post-deposition drying temperature and residual solvent on the LIDT of solvent-borne polymer coatings. In this work, poly(ethyl methacrylate) (PEMA) coatings were deposited by first spin coating solutions of PEMA (dissolved in 2,2,2-trichloroethanol (TCE)) onto fused silica substrates, then baking at temperatures of either 130°C (soft-bake) or 180°C (hard-bake). Analysis of the two coatings revealed that the soft-bake coating retained a significant amount of TCE within the polymer matrix, which functioned to plasticize the coating and reduce internal stress. The laser-induced damage resistance of the two coatings was evaluated using 351-nm, 1-ns laser pulses. The testing protocols included single-pulse (1-on-1), 1-pulse ramp (R-on-1), and a 1000-pulse ramp (1000R-on-1) test. The results showed that the plasticized, soft-bake coating exhibits a significantly increased LIDT, especially for multipulse irradiation conditions.

36 MATERIALS SCIENCE↗
NASA NTRS1995

Correlation of electron and proton irradiation-induced damage in InP solar cells

When determining the best solar cell technology for a particular space flight mission, accurate prediction of solar cell performance in a space radiation environment is essential. The current methodology used to make such predictions requires extensive experimental data measured under both electron and proton irradiation. Due to the rising cost of accelerators and irradiation facilities, such extensive data sets are expensive to obtain. Moreover, with the rapid development of novel cell designs, the necessary data are often not available. Therefore, a method for predicting cell degradation based on limited data is needed. Such a method has been developed at the Naval Research Laboratory based on damage correlation using 'displacement damage dose' which is the product of the non-ionizing energy loss (NIEL) and the particle fluence. Displacement damage dose is a direct analog of the ionization dose used to correlate the effects of ionizing radiations. In this method, the performance of a solar cell in a complex radiation environment can be predicted from data on a single proton energy and two electron energies, or one proton energy, one electron energy, and Co(exp 60) gammas. This method has been used to accurately predict the extensive data set measured by Anspaugh on GaAs/Ge solar cells under a wide range of electron and proton energies. In this paper, the method is applied to InP solar cells using data measured under 1 MeV electron and 3 MeV proton irradiations, and the calculations are shown to agree well with the measured data. In addition to providing accurate damage predictions, this method also provides a basis for quantitative comparisons of the performance of different cell technologies. The performance of the present InP cells is compared to that published for GaAs/Ge cells. The results show InP to be inherently more resistant to displacement energy deposition than GaAs/Ge.

Walters, Robert J.↗
NASA NTRS2006

Mechanism of Action for Anti-Radiation Vaccine in Reducing the Biological Impact of High-Dose Irradiation

Ionizing radiation is a major health risk of long-term space travel, the biological consequences of which include genetic and oxidative damage. In this study, we propose an original mechanism by which high doses of ionizing radiation induce acute toxicity. We identified biological components that appear in the lymphatic vessels shortly after gamma irradiation. These radiation-induced toxins, which we have named specific radiation determinants (SRD), were generated in the irradiated tissues and then collected and circulated throughout the body via the lymph circulation and bloodstream. Depending on the type of SRD elicited, different syndromes of acute radiation sickness (ARS) were expressed. The SRDs were developed into a vaccine used to confer active immunity against acute radiation toxicity in immunologically naive animals. Animals that were pretreated with SRDs exhibited resistance to lethal doses of gamma radiation, as measured by increased survival times and survival rates. In comparison, untreated animals that were exposed to similar large doses of gamma radiation developed acute radiation sickness and died within days. This phenomenon was observed in a number of mammalian species. We partially analyzed the biochemical characteristics of the SRDs. The SRDs were large molecular weight (200-250 kDa) molecules that were comprised of a mixture of protein, lipid, carbohydrate, and mineral. Further analysis is required to further identify the SRD molecules and the biological mechanism by which the mediate the toxicity associated with acute radiation sickness. By doing so, we may develop an effective specific immunoprophylaxis as a countermeasure against the acute effects of ionizing radiation.

Maliev, Vladislav↗
NASA NTRS2007

Mechanism of Action for Anti-radiation Vaccine in Reducing the Biological Impact of High-dose Gamma Irradiation

Ionizing radiation is a major health risk of long-term space travel, the biological consequences of which include genetic and oxidative damage. In this study, we propose an original mechanism by which high doses of ionizing radiation induce acute toxicity. We identified biological components that appear in the lymphatic vessels shortly after gamma irradiation. These radiation-induced toxins, which we have named specific radiation determinants (SRD), were generated in the irradiated tissues and then collected and circulated throughout the body via the lymph circulation and bloodstream. Depending on the type of SRD elicited, different syndromes of acute radiation sickness (ARS) were expressed. The SRDs were developed into a vaccine used to confer active immunity against acute radiation toxicity in immunologically naive animals. Animals that were pretreated with SRDs exhibited resistance to lethal doses of gamma radiation, as measured by increased survival times and survival rates. In comparison, untreated animals that were exposed to similar large doses of gamma radiation developed acute radiation sickness and died within days. This phenomenon was observed in a number of mammalian species. Initial analysis of the biochemical characteristics indicated that the SRDs were large molecular weight (200-250 kDa) molecules that were comprised of a mixture of protein, lipid, carbohydrate, and mineral. Further analysis is required to further identify the SRD molecules and the biological mechanism by which the mediate the toxicity associated with acute radiation sickness. By doing so, we may develop an effective specific immunoprophylaxis as a countermeasure against the acute effects of ionizing radiation.

Maliev, Vladislav↗
DOE OSTI2022

Understanding radiation effects in friction stir welded MA956 using ion irradiation and a rate theory model

We report an outstanding challenge in the manufacturing and joining of oxide dispersion strengthened steels is retaining the nanofeatures in the alloy throughout the fabrication and welding process. MA956 was friction stir welded with two different sets of welding parameters, resulting in a medium and high heat input. After welding, 5 MeV Fe ++ ion irradiations were performed at doses ranging from 50 to 200 dpa in the temperature range of 400 to 500°C. Post-irradiation characterization was performed with scanning transmission electron microscopy and energy-dispersive x-ray spectroscopy to investigate the Y-Al-O dispersoids, voids, and dislocations. After welding, the dispersoid microstructure coarsened, resulting in fewer and larger dispersoids regardless of heat input. After irradiation, the dispersoid behavior in the welded material was sensitive to temperature, exhibiting growth behavior attributed to Ostwald coarsening at 500 °C but a mixture of nucleation and more muted growth at 400 and 450 °C, attributed to competing mechanisms of radiation-enhanced diffusion and Ostwald coarsening. Void swelling correlated to heat input; being more prevalent in the welded conditions occurring at lower doses and in higher values relative to the base material. The low values of swelling despite microstructure coarsening caused by welding demonstrate the excellent swelling resistance of MA956, even after welding with the highest swelling values of 0.5% noted in the stir zone high heat input condition at 450 °C, 200 dpa. The dislocation behavior was inconsistent: the strongest trend was that network density was higher for welded versus base material, and an increase in loop diameter with temperature was observed. A rate theory model based on the observed microstructure suggests at high temperature interstitial loss to sinks was more likely to be dominant compared to mutual annihilation via point defect recombination, because of an increase of the radiation diffusion coefficient with temperature regardless of initial welded microstructure.

36 MATERIALS SCIENCE↗
NASA NTRS1982

Radiation damage

The radiation damage workshop considered a variety of topics among which were the need for equivalent electron fluences in gallium arsenide, the possibility of 15 percent end-of-life efficiencies for silicon, increasing radiation resistance in gallium arsenide, annealing of radiation damage and the need for radiation damage studies in cascade cells. The workshop members agreed that a high priority should be assigned to obtaining equivalent electron fluences for gallium arsenide cells. It was suggested that 1 MeV would be a reasonable electron energy for this purpose. Special care should be given to proton irradiations particularly for energies below 1 MeV. In addition, omnidirectional rather than normal incidence protons should be used. It was also agreed that there was a need for obtaining damage coefficients in gallium arsenide. In silicon, there is a requirement for additional flight data, especially in proton dominated orbits. These data are needed to further check the accuracy of the 1 MeV equivalence fluences.

Weinberg, I.↗
DOE OSTI2024

Nuclear reactor radiation and temperature effects on piezoelectric surface acoustic wave devices

Surface acoustic wave (SAW) resonators were characterized in-situ in a nuclear reactor environment at high temperature. Devices based on lithium niobate (LiNbO 3 ), aluminum nitride (sc-AlN), and thin-film aluminum nitride on sapphire substrate (AlN/sapphire) were tested up to 400 °C temperature and 1.9 × 10 12 n/cm 2 s neutron flux. Shifts in device resonant frequency were detected in response to temperature and neutron flux. Devices undergo a frequency change when exposed to neutron flux. At 300 °C, AlN/sapphire produced the strongest neutron flux response about 1.02 ppm at 1.27 × 10 12 n/cm 2 s neutron flux (5.7 × 10 4 rad-Si/hr neutron dose rate), compared to 0.30 ppm for LiNbO 3 and 0.17 ppm for sc-AlN. While the transient kinetics in response to step change in neutron flux support the defect-accumulation mechanism, the concurrent measurement of device temperature using resistive temperature sensor suggests additional heating caused by absorption of gamma rays can also play a role. These results make SAW devices attractive candidates for sensor applications in extreme environments.

Aluminum nitride↗
NASA NTRS1991

Temperature coefficients and radiation induced DLTS spectra of MOCVD grown n(+)p InP solar cells

The effects of temperature and radiation on n(+)p InP solar cells and mesa diodes grown by metallorganic chemical vapor deposition (MOCVD) were studied. It was shown that MOCVD is capable of consistently producing good quality InP solar cells with Eff greater than 19 percent which display excellent radiation resistance due to minority carrier injection and thermal annealing. It was also shown that universal predictions of InP device performance based on measurements of a small group of test samples can be expected to be quite accurate, and that the degradation of an InP device due to any incident particle spectrum should be predictable from a measurement following a single low energy proton irradiation.

Walters, Robert J.↗
DOE OSTI2023

Activated carbon supported Ni, Fe, and bimetallic NiFe catalysts for CO x -free H 2 production by microwave methane pyrolysis

The goal of this study was to test the effect of metal-impregnated carbon-based catalysts on the conversion of methane to hydrogen gas and solid carbon using microwave reactor technology. Monometallic and bimetallic catalysts on activated carbon supports (Ni/AC, Fe/AC, Ni-Fe/AC) are compared during methane pyrolysis testing. Catalytic methane pyrolysis was carried out in a microwave reactor at reaction temperatures of 600 °C and 800 °C. For comparison, one of the catalysts (Ni-Fe/AC) was tested in a conventionally heated reactor at 800 °C. The prepared catalysts were characterized by X-ray diffraction (XRD), while post-reaction catalysts were characterized by XRD and SEM. During reaction testing, the monometallic Ni/AC catalyst exhibited the best catalytic activity (CH 4 conversion: 46.0 and H 2 yield: 46.9%) when reacted in the microwave reactor, however, it suffered from rapid deactivation from carbon deposition (carbon yield: 0.39 gC/g catalyst). The bimetallic Ni-Fe/AC catalyst was slightly less active (CH 4 conversion: 36.9 and H 2 yield: 40.5%) but it was more resistant to carbon formation (carbon yield: 0.27 gC/g catalyst) suggesting it may have greater long-term stability. The Ni-Fe/AC catalyst was also the most energy efficient as it required the least microwave power to maintain the 800 °C reaction temperature compared to the other catalysts tested. Methane conversion of the bimetallic Ni-Fe/AC at 800 °C under microwave irradiation was three times the conversion under conventional heating at the same reaction temperature. Finally, this work demonstrates the use of microwave-specific catalysts for catalytic methane pyrolysis in a microwave reactor, and can be used as a foundation for further methane pyrolysis process and catalyst optimization for CO x -free H 2 production.

08 HYDROGEN↗
NASA NTRS2016

Single-Event Latchup Testing of the Micrel MIC4424 Dual Power MOSFET Driver

We conducted 47 exposures of four different MIC4424 devices and did not observe any SEL or high-current events. This included worst-case conditions with a LET of 81 MeV-sq cm/mg, applied voltage of 18.5 V, a case temperature greater than 120 C, and a final fluence of 1x10(exp 7)/sq cm. We also monitored both the outputs for the presence of SETs. While the period of the 1 MHz square wave was slightly altered in some cases, no pulses were added or deleted. 1. Purpose: The purpose of this testing is to characterize the BiCMOS/DMOS Micrel MIC4424 dual, non-inverting MOSFET driver for single-event latchup (SEL) susceptibility. These data will be used for flight lot evaluation purposes. 2. Devices Tested: The MIC4423/4424/4425 family are highly reliable BiCMOS/DMOS buffer/driver MOSFET drivers. They are higher output current versions of the MIC4426/4427/4428. They can survive up to 5V of noise spiking, of either polarity, on the ground pin. They can accept, without either damage or logic upset, up to half an amp of reverse current (either polarity) forced back into their outputs. Primarily intended for driving power MOSFETs, the MIC4423/4424/4425 drivers are suitable for driving other loads (capacitive, resistive, or inductive) which require low-impedance, high peak currents, and fast switching times. Heavily loaded clock lines, coaxial cables, or piezoelectric transducers are some examples. The only known limitation on loading is that total power dissipated in the driver must be kept within the maximum power dissipation limits of the package. Five (5) parts were provided for SEL testing. We prepared four parts for irradiation and reserved one piece as an un-irradiated control. More information about the devices can be found in Table 1. The parts were prepared for testing by removing the lid from the CDIP package to expose the target die. The parts were then soldered to small copper circuit adapter boards for easy handling. These parts are fabricated in a bulk BiCMOS/DMOS technology. Since we do not know the number of overlayers used in the fabrication processes, linear energy transfer calculations are determined based on the top-surface incident ion species and kinetic energy.

Power MOSFET↗
NASA NTRS1990

Thermal radiation characteristics of nonisothermal cylindrical enclosures using a numerical ray tracing technique

Analysis of energy emitted from simple or complex cavity designs can lead to intricate solutions due to nonuniform radiosity and irradiation within a cavity. A numerical ray tracing technique was applied to simulate radiation propagating within and from various cavity designs. To obtain the energy balance relationships between isothermal and nonisothermal cavity surfaces and space, the computer code NEVADA was utilized for its statistical technique applied to numerical ray tracing. The analysis method was validated by comparing results with known theoretical and limiting solutions, and the electrical resistance network method. In general, for nonisothermal cavities the performance (apparent emissivity) is a function of cylinder length-to-diameter ratio, surface emissivity, and cylinder surface temperatures. The extent of nonisothermal conditions in a cylindrical cavity significantly affects the overall cavity performance. Results are presented over a wide range of parametric variables for use as a possible design reference.

Baumeister, Joseph F.↗
NASA NTRS1981

Processing of silicon solar cells by ion implantation and laser annealing

Methods to improve the radiation tolerance of silicon cells for spacecraft use are described. The major emphasis of the program was to reduce the process-induced carbon and oxygen impurities in the junction and base regions of the solar cell, and to measure the effect of reduced impurity levels on the radiation tolerance of cells. Substrates of 0.1, 1.0 and 10.0 ohm-cm float-zone material were used as starting material in the process sequence. High-dose, low-energy ion implantation was used to form the junction in n+p structures. Implant annealing was performed by conventional furnace techniques and by pulsed laser and pulsed electron beam annealing. Cells were tested for radiation tolerance at Spire and NASA-LeRC. After irradiation by 1 MeV electrons to a fluence of 10 to the 16th power per sq cm, the cells tested at Spire showed no significant process induced variations in radiation tolerance. However, for cells tested at Lewis to a fluence of 10 to the 15th power per sq cm, ion-implanted cells annealed in vacuum by pulsed electron beam consistently showed the best radiation tolerance for all cell resistivities.

Minnucci, J. A.↗