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At least 577 records · Page 32

Load Margin Constrained Moving Target Defense against False Data Injection Attacks

Cyber physical security of power systems with high penetration of renewable generation has attracted attention from researchers. One critical issue is that cyber-physical attacks, disguised as uncertain renewable generation, can target conventional power system state estimation (SE). Moving target defense (MTD) is a promising defense strategy to detect stealthy false data injection (FDI) attacks against SE. However, all existing studies myopically perturb the reactance of transmission lines equipped with distributed flexible AC transmission system (D-FACTS) devices without adequately considering the system voltage stability. Exacerbated by the renewable generation uncertainty, existing MTD may cause voltage instability when the power grid is under stress. To address this issue, we propose a novel MTD framework that explicitly considers system voltage stability by using continuation power flow. We utilize the sensitivity matrix of power injection to line impedance, on which an optimization problem for maximizing load margin is formulated. This framework is validated on the IEEE 14-bus system and the IEEE 118-bus system, in which net load redistribution attacks are launched by sophisticated attackers. Steady-state simulations and dynamic simulations on PSS/E show the effectiveness of the proposed framework in circumventing the voltage instability while maintaining the detection effectiveness of MTD. The impact of the proposed method on attack detection effectiveness is also revealed.

Zhang, Hang↗

Lithiophilic CoF 2 @C hollow spheres towards spatial lithium deposition for stable lithium metal batteries

Lithium metal (LM) is a promising anode for next-generation batteries due to its high theoretical capacity and low electrode potential. Nonetheless, side reactions, volume change, and unwanted lithium dendrite growth seriously limit the practical application of LM. Herein, with the aid of a hard template approach, a novel lithiophilic CoF 2 -carbon hollow sphere (CoF 2 @C-HS) composite material is successfully prepared via a facile in-situ fluorination and etching strategy. The lithiophilic CoF 2 acts as nucleation sites to reduce nucleation overpotential as well as induces the spatial Li deposition and the formation of LiF-rich solid electrolyte interphase (SEI), and the hollow carbon matrix can enhance the electrical conductivity and offer free space for LM deposition. Theoretical simulations reveal that the synergistic effect of lithiophilic CoF 2 and hollow carbon matrix homogenizes the electric field distribution and Li + flux. Benefiting from these advantages, the CoF 2 @C-HS-modified copper substrate electrode delivers an enhanced Coulombic efficiency (CE) of 93.7% for 280 cycles at 1 mA cm –2 and 1 mA h cm –2 . The symmetrical cell using CoF 2 @C-HS can stably cycle more than 1800 h with a low voltage hysteresis of 11 mV at a current density of 0.5 mA cm –2 and an areal capacity of 0.5 mA h cm –2 . Moreover, the Li@CoF 2 @C-HS composite anode enables more than 300 stable cycles at 1 C with a capacity retention of 95% in LiFePO 4 -based full cell and 110 stable cycles at 1 C in LiNi 0.8 Co 0.1 Mn 0.1 O 2 (NCM811)-based high-voltage full cell. Finally, this work might shed a new light on designing lithiophilic hosts to spatially confine LM deposition, realizing dendrite-free LM anodes and the practical applications of LM batteries.

25 ENERGY STORAGE↗

Profile Evolution Simulation in Etching Systems Using Level Set Methods

Semiconductor device profiles are determined by the characteristics of both etching and deposition processes. In particular, a highly anisotropic etch is required to achieve vertical sidewalls. However, etching is comprised of both anisotropic and isotropic components, due to ion and neutral fluxes, respectively. In Ar/Cl2 plasmas, for example, neutral chlorine reacts with the Si surfaces to form silicon chlorides. These compounds are then removed by the impinging ion fluxes. Hence the directionality of the ions (and thus the ion angular distribution function, or IAD), as well as the relative fluxes of neutrals and ions determines the amount of undercutting. One method of modeling device profile evolution is to simulate the moving solid-gas interface between the semiconductor and the plasma as a string of nodes. The velocity of each node is calculated and then the nodes are advanced accordingly. Although this technique appears to be relatively straightforward, extensive looping schemes are required at the profile corners. An alternate method is to use level set theory, which involves embedding the location of the interface in a field variable. The normal speed is calculated at each mesh point, and the field variable is updated. The profile comers are more accurately modeled as the need for looping algorithms is eliminated. The model we have developed is a 2-D Level Set Profile Evolution Simulation (LSPES). The LSPES calculates etch rates of a substrate in low pressure plasmas due to the incident ion and neutral fluxes. For a Si substrate in an Ar/C12 gas mixture, for example, the predictions of the LSPES are identical to those from a string evolution model for high neutral fluxes and two different ion angular distributions.(2) In the figure shown, the relative neutral to ion flux in the bulk plasma is 100 to 1. For a moderately isotropic ion angular distribution function as shown in the cases in the left hand column, both the LSPES (top row) and rude's string method (bottom row) predict tapered profiles. The LSPES uses an AD with a FWHM = 13.5 degrees, and rude's model uses a ratio of sheath voltage to ion temperature of 50. The more anisotropic IADs produce profiles with more vertical sidewalls and a wider bottom surface, as shown in the right hand column. Here, the LSPES has an AD with a FWHM = 2 degrees, and rude's model uses a ratio of 500 of sheath voltage to ion temperature. The agreement between the LSPES and rude's model is excellent in both cases. We will present etching profiles generated by the LSPES, including calculations of the re-emitted fluxes of both neutrals and ions off of the profile walls. In addition, we will show the effect of geometric structures (overhangs, etc.) on the etching profiles. Other physical aspects, such as surface diffusion, will also be included in the model.

Hwang, Helen H.↗

Establishing a Lunar Surface Power Grid

The National Aeronautics and Space Administration (NASA) is seeking to develop a lunar surface power system for its Artemis missions as well as for planned future commercial lunar surface activities. This power system is composed of a number of assets which contain electrical loads and many of these contain energy resources. These assets can be connected to form a grid, which allows power to be shared between the system’s distributed energy resources. This grid can provide backup power to existing assets as well as primary power to future assets. A trade study was conducted for an Artemis scale grid, which has identified 3 kV AC as an ideal transmission voltage. Development work has also begun for a universal modular interface converter (UMIC) which connects assets and microgrids operating at 120 V DC space power to the grid. Products from this grid definition and UMIC development work will enable highly reliable and available power for Artemis and future planetary surface missions, which is key to achieving NASA’s long term vision of space exploration.

Planetary surface power↗

Effective Selective Area Doping for GaN Vertical Power Transistors Enabled by Innovative Materials Engineering

GaN vertical power transistors have emerged as promising candidates for future high efficiency high power electronic applications, with the potential to outperform conventional GaN lateral power devices in terms of power, breakdown, and avalanche characteristics. However, the development of current GaN vertical power transistors is seriously hindered by the poor materials performance of selective area doped p-n junctions. A mechanistic understanding of these fundamental materials issues is essential in order to achieve high performance selective area doped p-n junctions and consequently to advance the GaN vertical power transistor technology. To address this challenge, we carried out a comprehensive research program that advance fundamental knowledge in the selective area doping for GaN materials, and which will lead to the development of high performance GaN vertical power transistors. First, we developed innovative fabrication processes, including novel surface etching, surface passivation, and metalorganic chemical vapor deposition (MOCVD) growth, which provided enhanced opportunities for solving the unique challenges of selective area doping in GaN materials. Second, we performed a fundamental materials study using powerful characterization methods including transmission electron microscopy (TEM), ultraviolet (UV-), x-ray and angle-resolved photoelectron spectroscopy (UPS/XPS/ARPES), electron holography, and cathodoluminescence (CL); Third, we investigated several related issues, including Mg incorporation, polarization effects in carrier transport, and non-ideal material effects, which have rarely been explored so far. At the end of this project, we successfully demonstrated (1) fundamental understanding of selective area etching, regrowth, and doping of GaN, and associated knowledge on defects, interface, and breakdown properties. (2) Effective etch and regrowth processing recipes to achieve etch/regrowth GaN p-n diodes with very low leakage of 3.5 nA at 600 V, which meets the ARPA-E target. (2) High performance vertical GaN p-n didoes and vertical junction termination extension (JTE) devices with breakdown voltage of ~ 2 kV, and breakdown electric field of ~ 3.5 MV/cm, which are close to the performance limit of GaN. The successful outcome has resulted in new fundamental understandings in the selective area doping and regrowth process for GaN, which will lead to groundbreaking GaN vertical transistors for high performance next generation power electronics.

24 POWER TRANSMISSION AND DISTRIBUTION↗

EVSE Cybersecurity and Resilience

Consequence-driven Cybersecurity Analysis for Extreme Fast Charging Electric Vehicle Infrastructure Electric vehicle (EV) development and associated charging infrastructure are expected to advance rapidly. Thirty percent of all global vehicle sales may be EVs and hybrid EVs by 2025, and they will rely on increasingly sophisticated strategies for grid integration. Next-generation EV charging infrastructure is expected to include interconnected renewable resources, such as photovoltaic (PV) arrays and battery storage systems, along with grid-edge devices. Although distributed energy resources (DERs) are useful in several ways, such as peak shaving at high demand times and backup supply for added resilience, the integration of vehicle charging and DERs could create more avenues for cyberattack. Physical and/or remote access to EV charging station components, including charge ports, power electronics, controllers, and local generation (e.g., PV and energy storage) could be paths to cause power fluctuations, leading to altered operations at the charging station, escalated privileges to administrative systems, exfiltration of financial information (including personally identifiable information), and reduced grid stability. One compromised EV supply equipment component can open the door to a variety of exploitable vulnerabilities. Cloud computing and mobile application control have the potential to expand the threat surface to non-repudiation and firmware integrity challenges. Vendor clouds have access to hundreds of chargers, and if compromised, can scale the attack surface exponentially. The high power and voltage levels of xFC infrastructure (e.g., 400 kW at 1000- V DC) increase the hazards and ability to impact the grid and vehicles more than lower-power charging systems. Legacy communications systems and protocols could also put EV infrastructure at risk of cyberattacks requiring a robust patch management process. Communications networks link EVs and chargers to several stakeholders - including charging station operators, grid operators, vendors/manufacturers, and aggregators - who have both physical and network access to share information for control, monitoring, and analytics. Information in these networks that is vulnerable to compromise includes the state of charge, charging duration, payment information, electricity price, and load control. Analyzing and prioritizing these interconnections risks could help address cybersecurity related to data leakage and manipulation.

charging↗

Design description of the Schuchuli Village photovoltaic power system

A stand alone photovoltaic (PV) power system for the village of Schuchuli (Gunsight), Arizona, on the Papago Indian Reservation is a limited energy, all 120 V (d.c.) system to which loads cannot be arbitrarily added and consists of a 3.5 kW (peak) PV array, 2380 ampere-hours of battery storage, an electrical equipment building, a 120 V (d.c.) electrical distribution network, and equipment and automatic controls to provide control power for pumping water into an existing water system; operating 15 refrigerators, a clothes washing machine, a sewing machine, and lights for each of the homes and communal buildings. A solar hot water heater supplies hot water for the washing machine and communal laundry. Automatic control systems provide voltage control by limiting the number of PV strings supplying power during system operation and battery charging, and load management for operating high priority at the expense of low priority loads as the main battery becomes depleted.

Ratajczak, A. F.↗

Non-Geiger-Mode Single-Photon Avalanche Detector with Low Excess Noise

This design constitutes a self-resetting (gain quenching), room-temperature operational semiconductor single-photon-sensitive detector that is sensitive to telecommunications optical wavelengths and is scalable to large areas (millimeter diameter) with high bandwidth and efficiencies. The device can detect single photons at a 1,550-nm wavelength at a gain of 1 x 10(exp 6). Unlike conventional single photon avalanche detectors (SPADs), where gain is an extremely sensitive function to the bias voltage, the multiplication gain of this device is stable at 1 x 10(exp 6) over a wide range of bias from 30.2 to 30.9 V. Here, the multiplication gain is defined as the total number of charge carriers contained in one output pulse that is triggered by the absorption of a single photon. The statistics of magnitude of output signals also shows that the device has a very narrow pulse height distribution, which demonstrates a greatly suppressed gain fluctuation. From the histograms of both pulse height and pulse charge, the equivalent gain variance (excess noise) is between 1.001 and 1.007 at a gain of 1 x 10(exp 6). With these advantages, the device holds promise to function as a PMT-like photon counter at a 1,550- nm wavelength. The epitaxial layer structure of the device allows photons to be absorbed in the InGaAs layer, generating electron/hole (e-h) pairs. Driven by an electrical field in InGaAs, electrons are collected at the anode while holes reach the multiplication region (InAlAs p-i-n structure) and trigger the avalanche process. As a result, a large number of e-h pairs are created, and the holes move toward the cathode. Holes created by the avalanche process gain large kinetic energy through the electric field, and are considered hot. These hot holes are cooled as they travel across a p -InAlAs low field region, and are eventually blocked by energy barriers formed by the InGaAsP/ InAlAs heterojunctions. The composition of the InGaAsP alloy was chosen to have an 80 meV valance band offset with InAlAs, which is high enough to hinder the transport of the already cooled holes. Being stopped by the energy barrier, holes are accumulated at the junctions to shield the electric field, resulting in a decrease of the electric field in the multiplication region. Because the impact ionization rate is extremely sensitive to the magnitude of the electric field, the field-screening effect drastically reduces the impact ionization rate and quenches the output signals. After the avalanche pulse signal is self-quenched, the accumulated holes at the InGaAsP/ InAlAs interface escape the energy barrier through thermal excitation and tunneling and finally leave the device. The device is thus reset and ready for subsequent photon detection. This recovery time is controlled by the height of the energy barrier and the hole-cooling rate.

Zhao, Kai↗

3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs

The energy distributions of electrons in gate-all-around (GAA) Si MOSFETs are analyzed using full-band 3-D Monte Carlo (MC) simulations. Excellent agreement is obtained with experimental current–voltage characteristics. For these 24-nm gate length devices, the electron distribution features a smeared energy peak with an extended tail. This extension of the tail results primarily from the Coulomb scattering within the channel. A fraction of electrons that enter the drain retains their energy, resulting in an out-of-equilibrium distribution in the drain region. The simulated density and average energy of the hot electrons correlate well with experimentally observed device degradation. We propose that the interaction of high-energy electrons with hydrogen-passivated phosphorus dopant complexes within the drain may provide an additional pathway for interface-trap formation in these devices.

42 ENGINEERING↗

Theoretical and measured electron-density distributions for the ram vehicle at high altitudes.

Application of a viscous shock-layer analysis to the calculation of nonequilibrium-flow species distributions in the plasma layer of a blunt-nosed vehicle at high altitudes. The theoretical electron-density results obtained are in good agreement with those measured in flight for a hemisphere-9 deg cone entry vehicle. The flight measurements were obtained using electrostatic probes that protruded well into the shock layer. In addition, the theoretically obtained heavy-particle translational temperatures appear to agree fairly well with the electron temperatures that were measured in the flight experiments using voltage-swept thin-wire electrostatic probes. The influence of the reaction rate coefficients on the calculated electron densities has been assessed and shown to be within the uncertainty in the flight data. The theoretical results demonstrate the importance of including in the chemical model the positive ions N2(+), O2(+), N(+), and O(+), in addition to NO(+), for the high altitudes and velocities considered.

Kang, S.-W.↗

A low-mass faraday cup experiment for the solar wind

Faraday cups have proven to be very reliable and accurate instruments capable of making 3-D velocity distribution measurements on spinning or 3-axis stabilized spacecraft. Faraday cup instrumentation continues to be appropriate for heliospheric missions. As an example, the reductions in mass possible relative to the solar wind detection system about to be flown on the WIND spacecraft were estimated. Through the use of technology developed or used at the MIT Center for Space Research but were not able to utilize for WIND: surface-mount packaging, field-programmable gate arrays, an optically-switched high voltage supply, and an integrated-circuit power converter, it was estimated that the mass of the Faraday Cup system could be reduced from 5 kg to 1.8 kg. Further redesign of the electronics incorporating hybrid integrated circuits as well as a decrease in the sensor size, with a corresponding increase in measurement cycle time, could lead to a significantly lower mass for other mission applications. Reduction in mass of the entire spacecraft-experiment system is critically dependent on early and continual collaborative efforts between the spacecraft engineers and the experimenters. Those efforts concern a range of issues from spacecraft structure to data systems to the spacecraft power voltage levels. Requirements for flight qualification affect use of newer, lighter electronics packaging and its implementation; the issue of quality assurance needs to be specifically addressed. Lower cost and reduced mass can best be achieved through the efforts of a relatively small group dedicated to the success of the mission. Such a group needs a fixed budget and greater control over quality assurance requirements, together with a reasonable oversight mechanism.

Lazarus, A. J.↗

Novel high-gain, improved-bandwidth, finned-ladder V-band Traveling-Wave Tube slow-wave circuit design

The V-band frequency range of 59-64 GHz is a region of the millimeter-wave spectrum that has been designated for inter-satellite communications. As a first effort to develop a high-efficiency V-band Traveling-Wave Tube (TWT), variations on a ring-plane slow-wave circuit were computationally investigated to develop an alternative to the more conventional ferruled coupled-cavity circuit. The ring-plane circuit was chosen because of its high interaction impedance, large beam aperture, and excellent thermal dissipation properties. Despite these advantages, however, low bandwidth and high voltage requirements have, until now, prevented its acceptance outside the laboratory. In this paper, the three-dimensional electrodynamic simulation code MAFIA (solution of MAxwell's Equation by the Finite-Integration-Algorithm) is used to investigate methods of increasing the bandwidth and lowering the operating voltage of the ring-plane circuit. Calculations of frequency-phase dispersion, beam on-axis interaction impedance, attenuation and small-signal gain per wavelength were performed for various geometric variations and loading distributions of the ring-plane TWT slow-wave circuit. Based on the results of the variations, a circuit termed the finned-ladder TWT slow-wave circuit was designed and is compared here to the scaled prototype ring-plane and a conventional ferruled coupled-cavity TWT circuit over the V-band frequency range. The simulation results indicate that this circuit has a much higher gain, significantly wider bandwidth, and a much lower voltage requirement than the scaled ring-plane prototype circuit, while retaining its excellent thermal dissipation properties. The finned-ladder circuit has a much larger small-signal gain per wavelength than the ferruled coupled-cavity circuit, but with a moderate sacrifice in bandwidth.

Kory, Carol L.↗

7.2 kV Three-Port SiC Single-Stage Current-Source Solid-State Transformer With 90 kV Lightning Protection

This article proposes a multiport modular single-stage current-source solid-state transformer (SST) for applications like photovoltaic, energy storage integration, electric vehicle fast charging, data center, etc. The 7.2 kV 50 kVA current-source SST consists of five input-series output-parallel modules, each based on 3.3 kV SiC reverse-blocking MOSFET-plus-diode modules. The proposed SST has some unique features. First, compared to the voltage-source or matrix converter-based SSTs, the current-source SST has a unique advantage of single-stage isolated AC/DC or AC/AC conversion with an inductive DC link, but no medium-voltage (MV) AC experiments have been reported. This article for the first time demonstrates MV AC current-source SST up to 7.5 kV peak. Second, the multiport SST has a buffer port for active power decoupling (APD) or energy storage integration. The double-line-frequency power ripple from single-phase AC grid normally results in a large capacitor size in MV SSTs. The APD scheme is proposed in MV applications for the first time to enable a reduced DC link and the electrolytic capacitor-less SST with high reliability. Third, as a direct grid-connected converter without line-frequency transformer, insulation and protection are critical. A medium-frequency transformer design passes 55 kV basic-insulation level (BIL) and 60 kV high potential dielectrics withstand test with only 0.09% leakage inductance. Importantly, a lightning protection scheme is presented to protect the SST itself from 90 kV BIL impulse. Fourth, the proposed current-source SST topology is a modular soft-switching solid-state transformer (M-S4T) with full-range zero-voltage switching and controlled dv/dt for low electromagnetic interference. Furthermore, these concepts are verified in a three-port M-S4T prototype with forced oil cooling under single-module, stacked-module, steady-state, and dynamic operations.

14 SOLAR ENERGY↗

A Short-Term Solar Forecasting Platform Using a Physics-Based Smart Persistence Model and Data Imputation Method

Electrical energy plays vital role in our socio-economic activity and therefore ensuring the reliability of the electric grid, from the generation, transmission and distribution level is critical. In order to maintain the power system parameter viz., frequency, voltage, etc., optimally, balancing of generation and consumption is very much essential. However, solar energy is infirm power by nature this is due to cloud cover / other local phenomena. Hence, Photovoltaic (PV) power generation brings a significant challenge to the grid operator due to the variability of the solar energy. The complexity of this challenge in terms of planning and dispatch ability of PV resources, aggravates with the high penetration of solar energy into the electric grid. In this setting, reliable solar radiation forecasting models based on accurate and quality input data become essential. In order to develop a suitable model for predicting solar radiation, quality historical / real time measurement is also needed. Under this study NIWE and NREL jointly developed / tested short-term solar forecasting frameworks using a smart persistence and physics-based smart persistence models for intra-hour forecasting of solar radiation (PSPI) and benchmarked 9 different data imputation techniques in 15 Solar Radiation Resource Assessment (SRRA) stations, located at different parts of India. During any measurement campaign, due to various technical reasons, we may miss few observations. However, the missing observation often reduce the performance of any forecasting model. Therefore, suitable data imputation method would assist us to obtain continuous observation of solar radiation. A station-by-station and method-by-method analysis was carried out to understand the performance of each model. Based on our analysis, among all the data imputation methods, the Kalman data imputation method is better for Indian Weather condition. In addition, Kalman StructTS, Linear, Stine and Arima methods yield slightly inferior accuracy compared to Kalman, but outperform the other methods. The extended solar radiation data are used by solar forecasting models to provide the prediction of solar radiation at 15 SRRA stations. As far as short term forecasting model is concerned, the PSPI model outperforms the Smart Persistence model. However, the forecast error is increases with the forecasting horizon.

29 ENERGY PLANNING, POLICY, AND ECONOMY↗

Test Results from a High Power Linear Alternator Test Rig

Stirling cycle power conversion is an enabling technology that provides high thermodynamic efficiency but also presents unique challenges with regard to electrical power generation, management, and distribution. The High Power Linear Alternator Test Rig (HPLATR) located at the NASA Glenn Research Center (GRC) in Cleveland, OH is a demonstration test bed that simulates electrical power generation from a Stirling engine driven alternator. It implements the high power electronics necessary to provide a well regulated DC user load bus. These power electronics use a novel design solution that includes active rectification and power factor control, active ripple suppression, along with a unique building block approach that permits the use of high voltage or high current alternator designs. This presentation describes the HPLATR, the test program, and the operational results.

Birchenough, Arthur G.↗

Test Results From a High Power Linear Alternator Test Rig

Stirling cycle power conversion is an enabling technology that provides high thermodynamic efficiency but also presents unique challenges with regard to electrical power generation, management, and distribution. The High Power Linear Alternator Test Rig (HPLATR) located at the NASA Glenn Research Center (GRC) in Cleveland, Ohio is a demonstration test bed that simulates electrical power generation from a Stirling engine driven alternator. It implements the high power electronics necessary to provide a well regulated DC user load bus. These power electronics use a novel design solution that includes active rectification and power factor control, active ripple suppression, along with a unique building block approach that permits the use of high voltage or high current alternator designs. This report describes the HPLATR, the test program, and the operational results.

Birchenough, Arthur G.↗

Strategy for Developing Technologies for Megawatt-class Nuclear Electric Propulsion Systems

In late fiscal year 2020, the Space Nuclear Propulsion (SNP) project began the process of formulating an investment strategy to support development of the technologies required for a high-power (megawatt-class) nuclear electric propulsion (NEP) system capable of performing human-scale missions. This activity was initiated concurrent with several high-level studies and assessments were either under way or had just concluded. Studies of human-scale Mars missions have been performed several times over the past two decades. One of the most recent studies examined opposition-class human Mars missions to occur in the late 2030s timeframe [1,2]. The mission architecture assumed a hybrid NEP/chem-propelled vehicle that used a high specific impulse (Isp) NEP-system and a liquid oxygen (LOx)-liquid methane high thrust chemical stage (two 110 kN (25 klbf) thrust, 365 s Isp engines) for maneuvers performed to enter and exit gravity wells. Trajectory analyses performed in this study showed that such a mission could be performed with 2-4 MWe directed into the electric propulsion system (operating for 20,000+ hours), with the large range representing different opposition-class Mars mission opportunities and permutations on the trajectory design, concept of operations, and technology choices. In 2020, the NASA Engineering and Safety Center (NESC) performed a study to evaluate the maturity of the different technologies required for nuclear propulsion systems [3]. The executive summary of this report provided the following top-level conclusions: • “The majority of critical technologies for… NEP/Chem… systems are relatively immature” • “TRLs [technology readiness levels] in the literature are often overestimated” • “The majority of critical technologies… for NEP/Chem… systems are at a relatively high level of advancement degree of difficulty (AD2 > 4) for maturation, requiring a dual development approach” • “The proper assessment of baseline TRL and AD2 values and the estimation of requirements and resources required for advancement have been consistent issues for NEP,” • “Non-advocate reviews should occur at the start of a technology program and at all key milestones.” In 2021, the National Academies of Science, Engineering, and Medicine (NASEM) issued a separate report [4] identifying the “primary technical and programmatic challenges, merits, and risks for maturing space nuclear propulsion technologies of interest to a future human Mars exploration mission.” That work contained several important findings, including: • “Developing a MWe-class NEP system for the baseline mission would require increasing power by orders of magnitude relative to NEP system flight- or ground-based technology demonstrations completed to date.” • “Subscale in-space flight testing of NEP systems cannot address many of the risks and potential failure modes associated with the baseline mission NEP system. With sufficient M&S [modeling & simulation] and ground testing, including modular subsystem tests at full scale and power, flight qualification requirements can be met by the cargo missions that will precede the first crewed mission to Mars. Fully integrated ground testing may not be required.” • “As a result of low and intermittent investment over the past several decades, it is unclear if even an aggressive program would be able to develop an NEP system capable of executing the baseline mission in 2039.” These efforts motivated the SNP project to investigate the technologies available for a megawatt-class high power nuclear electric propulsion system. That system is illustrated schematically in Figure 1 and is comprised of five separate top-level critical technology elements (CTEs). 1. Nuclear Reactor – Thermal power source for the system, utilizing high-assay low enriched uranium (HALEU) as the nuclear fuel. Reactor radiation shielding is also included in this CTE. 2. Power Conversion – Operates as a thermodynamic cycle, accepting nuclear reactor thermal power as an input and converting it to mechanical power. 3. Power Management and Distribution (PMAD) – Accepts as an input mechanical power from the power conversion system, which is used to generate electrical power. The PMAD system also distributes the generated electrical power to all other parts of the spacecraft, including the high-power EP system. The PMAD system may also perform duties such as isolation, fault detection, and power transformation/rectification for different spacecraft systems, including the thrusters. 4. Electric Propulsion (EP) – Accepts as an input electrical power, which is used to accelerate a propellant to high speeds to produce thrust. This system includes the power processing unit (PPU), which converts the power it receives to the correct current and voltage required by the thrusters, and the propellant storage and feed systems, which contain and meter the flow of propellant to the thrusters. 5. Thermal Management (Radiators/Heat Rejection) – The cold side of the thermodynamic power conversion cycle, accepts thermal power from the power conversion system and radiatively rejects that heat to space. In this paper, we describe the SNP project formulation and investment strategy that aims to accomplish the research and development required to advance the technology readiness for each CTE. The strategy relies heavily upon experimental testing supported by modeling and simulation to yield realistic assessments of the technologies, which in turn will be used to inform future NEP system-level design decisions and any potential technology downselects.

Kurt A Polzin↗

Data analysis and interpretation related to space system/environment interactions at LEO altitude

Several studies made on the interaction of active systems with the LEO space environment experienced from orbital or suborbital platforms are covered. The issue of high voltage space interaction is covered by theoretical modeling studies of the interaction of charged solar cell arrays with the ionospheric plasma. The theoretical studies were complemented by experimental measurements made in a vacuum chamber. The other active system studied was the emission of effluent from a space platform. In one study the emission of plasma into the LEO environment was studied by using initially a 2-D model, and then extending this model to 3-D to correctly take account of plasma motion parallel to the geomagnetic field. The other effluent studies related to the releases of neutral gas from an orbiting platform. One model which was extended and used determined the density, velocity, and energy of both an effluent gas and the ambient upper atmospheric gases over a large volume around the platform. This model was adapted to study both ambient and contaminant distributions around smaller objects in the orbital frame of reference with scale sizes of 1 m. The other effluent studies related to the interaction of the released neutral gas with the ambient ionospheric plasma. An electrostatic model was used to help understand anomalously high plasma densities measured at times in the vicinity of the space shuttle orbiter.

Raitt, W. John↗