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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 577 records · Page 32
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Quantum simulation of $\phi^4$ theories in qudit systems

We discuss the implementation of quantum algorithms for lattice $\Phi^4$ theory on circuit quantum electrodynamics (cQED) system. The field is represented on qudits in a discretized field amplitude basis. The main advantage of qudit systems is that its multi-level characteristic allows the field interaction to be implemented only with diagonal single-qudit gates. Considering the set of universal gates formed by the single-qudit phase gate and the displacement gate, we address initial state preparation and single-qudit gate synthesis with variational methods.

Kurkcuoglu, Doga Murat↗
DOE OSTI2023

Design and Development of a Particle Flow Control Mechanism for Particle-Based CSP System Applications

The submission is a two-page extended abstract. Within particle-based Concentrated Solar Power Systems (CSP), particles are the heat transfer medium, and therefore, the heat transfer effectiveness of these systems is reliant on their ability to effectively control particle mass flow rate. The vast majority of approaches for particle flow control in high temperature CSP is based on a slide-gate approach where a gate is linearly actuated across a tear-drop shaped opening. The slide-gate mechanism has a sensitivity of 0.354 g/s-mm, which is defined as the mass flow rate over the position of the gate. In the present work, we have designed and tested a new particle flow control mechanism with the potential for faster response times and different sensitivities than a slide gate approach enabling more control of particle flow.

14 SOLAR ENERGY↗
DOE OSTI2025

Fast Sideband Control of a Weakly Coupled Multimode Bosonic Memory

Circuit quantum electrodynamics (cQED) with superconducting cavities coupled to nonlinear circuits like transmons offers a promising platform for hardware-efficient quantum information processing. We address critical challenges in realizing this architecture by weakening the dispersive coupling while also demonstrating fast, high-fidelity multimode control by dynamically amplifying gate speeds through transmon-mediated sideband interactions. This approach enables transmon-cavity SWAP gates, for which we achieve speeds up to 30 times larger than the bare dispersive coupling. Combined with transmon rotations, this allows for efficient, universal state preparation in a single cavity mode, though achieving unitary gates and extending control to multiple modes remains a challenge. In this work, we overcome this by introducing two sideband control strategies: (1) a shelving technique that prevents unwanted transitions by temporarily storing populations in sideband-transparent transmon states and (2) a method that exploits the dispersive shift to synchronize sideband transition rates across chosen photon-number pairs to implement transmon-cavity SWAP gates that are selective on photon number. We leverage these protocols to prepare Fock and binomial code states across any of ten modes of a multimode cavity with millisecond cavity coherence times. We demonstrate the encoding of a qubit from a transmon into arbitrary vacuum and Fock state superpositions, as well as entangled NOON states of cavity mode pairs— a scheme extendable to arbitrary multimode Fock encodings. Furthermore, we implement a new binomial encoding gate that converts arbitrary transmon superpositions into binomial code states in $\qty{4}{\micro\second}$ (less than $1/\chi$), achieving an average post-selected final state fidelity of $\qty{96.3}{\percent}$ across different fiducial input states.

Huang, Jordan [Rutgers U., Piscataway]↗
DOE OSTI2026

Universal Jaynes-Cummings Control of an Oscillator

The Jaynes-Cummings (JC) interaction-the coherent exchange of excitations between a two-level system and a harmonic oscillator-is one of the fundamental interactions of quantum optics, realized across platforms such as cavity quantum electrodynamics, trapped ions, mechanical resonators, and superconducting circuits. Although JC interactions and qubit rotations form a universal gate set for oscillator control, practical implementations have not been demonstrated. Here we develop and experimentally demonstrate universal JC-based oscillator control by compiling arbitrary unitary gates into sequences of JC interactions and qubit rotations. In our experiment, the oscillator is realized using a mode of a high quality factor microwave cavity and the ancilla qubit using a superconducting transmon circuit, with the JC interaction implemented by a sideband interaction enabled by the Josephson nonlinearity. The native gates are constructed to be closed below a chosen cutoff photon number, encoding a qudit with suppressed leakage errors, while ancilla relaxation errors are detectable. We further find that the dispersive shift serves as a compilation resource that reduces circuit depths. We demonstrate universal qudit control and implement a single-qutrit gate set with a mean post-selected process fidelity of 96%, as well as ququart and ququint shift gates. These results establish Jaynes-Cummings control as a practical route to universal oscillator control, enabling programmable bosonic processors across a variety of quantum platforms.

Huang, Jordan [Rutgers U., Piscataway]↗
DOE OSTI2021

Progress and Challenges for Memtransistors in Neuromorphic Circuits and Systems

Due to the increasing importance of artificial intelligence (AI), significant recent effort has been devoted to the development of neuromorphic circuits that seek to emulate the energy-efficient information processing of the brain. While non-volatile memory (NVM) based on resistive switches, phase-change memory, and magnetic tunnel junctions has shown potential for implementing neural networks, additional multi-terminal device concepts are required for more sophisticated bio-realistic functions. Of particular interest are memtransistors based on low-dimensional nanomaterials, which are capable of electrostatically tuning memory and learning behavior at the device level. Herein, a conceptual overview of the memtransistor is provided in the context of neuromorphic circuits. Recent progress is surveyed for memtransistors and related multi-terminal NVM devices including dual-gated floating-gate memories, dual-gated ferroelectric transistors, and dual-gated van der Waals heterojunctions. Further, the different materials systems and device architectures are classified based on the degree of control and relative tunability of synaptic behavior, with an emphasis on device concepts that harness the reduced dimensionality, weak electrostatic screening, and phase-changes properties of nanomaterials. Finally, strategies for achieving wafer-scale integration of memtransistors and multi-terminal NVM devices are delineated, with specific attention given to the materials challenges for practical neuromorphic circuits.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Imaging Reconfigurable Molecular Concentration on a Graphene Field-Effect Transistor

The spatial arrangement of adsorbates deposited onto a clean surface under vacuum typically cannot be reversibly tuned. Here we use scanning tunneling microscopy to demonstrate that molecules deposited onto graphene field-effect transistors (FETs) exhibit reversible, electrically tunable surface concentration. Continuous gate-tunable control over the surface concentration of charged F 4 TCNQ molecules was achieved on a graphene FET at T = 4.5K. This capability enables the precisely controlled impurity doping of graphene devices and also provides a new method for determining molecular energy level alignment based on the gate-dependence of molecular concentration. Gate-tunable molecular concentration is explained by a dynamical molecular rearrangement process that reduces total electronic energy by maintaining Fermi level pinning in the device substrate. Finally, the molecular surface concentration is fully determined by the device back-gate voltage, its geometric capacitance, and the energy difference between the graphene Dirac point and the molecular LUMO level.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2023

Reversible Switch in Charge Storage Enabled by Selective Ion Transport in Solid Electrolyte Interphase

Solid-electrolyte interphases (SEIs) in advanced rechargeable batteries ensure reversible electrode reactions at extreme potentials beyond the thermodynamic stability limits of electrolytes by insulating electrons while allowing working ions to transport. Such selective ion transport occurs naturally in biological cell membranes as a ubiquitous prerequisite of many life processes and a foundation of biodiversity. In addition, cell membranes can selectively open and close the ion channels in response to external stimuli (e.g., electrical, chemical, mechanical, thermal), giving rise to “gating” mechanisms that help manage intracellular reactions. We wondered whether the chemistry and structure of SEIs can mimic cell membranes, such that ion gating can be replicated. That is, can SEIs realize a reversible switching between two electrochemical behaviors, i.e., the ion intercalation chemistry of batteries and the ion adsorption of capacitors? Herein, we report such SEIs that result in thermally activated selective ion transport. The function of open/close gate switches is governed by the chemical and structural dynamics of SEIs under different thermal conditions, with precise behaviors as conducting and insulating interphases that enable battery and capacitive processes within a finite temperature window. Such an ion gating function is synergistically contributed by Arrhenius-activated ion transport and SEI dissolution/regrowth. Following the understanding of this new mechanism, we then develop an electrochemical method to heal the SEI layer in situ. As a result, the knowledge acquired in this work reveals the possibility of hitherto unknown biomimetic properties of SEIs, which will guide us to leverage such complexities to design better SEIs for future battery chemistries.

25 ENERGY STORAGE↗
DOE OSTI2021

Reoptimization of Quantum Circuits via Hierarchical Synthesis

The current phase of quantum computing is in the Noisy Intermediate-Scale Quantum (NISQ) era. On NISQ devices, two-qubit gates such as CNOTs are much noisier than single-qubit gates, so it is essential to minimize their count. Quantum circuit synthesis is a process of decomposing an arbitrary unitary into a sequence of quantum gates, and can be used as an optimization tool to produce shorter circuits to improve overall circuit fidelity. However, the time-to-solution of synthesis grows exponentially with the number of qubits. As a result, synthesis is intractable for circuits on a large qubit scale. In this paper, we propose a hierarchical, block-by-block opti-mization framework, QGo, for quantum circuit optimization. Our approach allows an exponential cost optimization to scale to large circuits. QGo uses a combination of partitioning and synthesis: 1) partition the circuit into a sequence of independent circuit blocks; 2) re-generate and optimize each block using quantum synthesis; and 3) re-compose the final circuit by stitching all the blocks together. We perform our analysis and show the fidelity improvements in three different regimes: small-size circuits on real devices, medium-size circuits on noisy simulations, and large-size circuits on analytical models. Our technique can be applied after existing optimizations to achieve higher circuit fidelity. Further, using a set of NISQ benchmarks, we show that QGo can reduce the number of CNOT gates by 29.9% on average and up to 50% when compared with industrial compiler optimizations such as t|ket). When executed on the IBM Athens system, shorter depth leads to higher circuit fidelity. We also demonstrate the scalability of our QGo technique to optimize circuits of 60+ qubits, Our technique is the first demonstration of successfully employing and scaling synthesis in the compilation tool chain for large circuits. Overall, our approach is robust for direct incorporation in production compiler toolchains to further improve the circuit fidelity.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2020

Systematic Crosstalk Mitigation for Superconducting Qubits via Frequency-Aware Compilation

One of the key challenges in current Noisy Intermediate-Scale Quantum (NISQ) computers is to control a quantum system with high-fidelity quantum gates. There are many reasons a quantum gate can go wrong - for superconducting transmon qubits in particular, one major source of gate error is the unwanted crosstalk between neighboring qubits due to a phenomenon called frequency crowding. We motivate a systematic approach for understanding and mitigating the crosstalk noise when executing near-term quantum programs on superconducting NISQ computers. Here, we present a general software solution to alleviate frequency crowding by systematically tuning qubit frequencies according to input programs, trading parallelism for higher gate fidelity when necessary. The net result is that our work dramatically improves the crosstalk resilience of tunable-qubit, fixed-coupler hardware, matching or surpassing other more complex architectural designs such as tunable-coupler systems. On NISQ benchmarks, we improve worst-case program success rate by 13.3x on average, compared to existing traditional serialization strategies.

Computer architecture↗
DOE OSTI2021

Ion Pair Uptake in Ion Gel Devices Based on Organic Mixed Ionic–Electronic Conductors

Abstract In organic mixed ionic–electronic conductors (OMIECs), it is critical to understand the motion of ions in the electrolyte and OMIEC. Generally, the focus is on the movement of net charge during gating, and the motion of neutral anion–cation pairs is seldom considered. Uptake of mobile ion pairs by the semiconductor before electrochemical gating (passive uptake) can be advantageous as this can improve device speed, and both ions can participate in charge compensation during gating. Here, such passive ion pair uptake in high‐speed solid‐state devices is demonstrated using an ion gel electrolyte. This is compared to a polymerized ionic liquid (PIL) electrolyte to understand how ion pair uptake affects device characteristics. Using X‐ray photoelectron spectroscopy, the passive uptake of ion pairs from the ion gel into the OMIEC is detected, whereas no uptake is observed with a PIL electrolyte. This is corroborated by X‐ray scattering, which reveals morphological changes to the OMIEC from the uptake of ion pairs. With in situ Raman, a reorganization of both anions and cations is then observed during gating. Finally, the speed and retention of OMIEC‐based neuromorphic devices are tuned by controlling the freedom of charge motion in the electrolyte.

Quill, Tyler J.↗
DOE OSTI2020

Ion Exchange Gels Allow Organic Electrochemical Transistor Operation with Hydrophobic Polymers in Aqueous Solution

Conjugated-polymer-based organic electrochemical transistors (OECTs) are being studied for applications ranging from biochemical sensing to neural interfaces. While new polymers that interface digital electronics with the aqueous chemistry of life are being developed, the majority of high-performance organic transistor materials are poor at transporting biologically relevant ions. Here, the operating mode of an organic transistor is changed from that of an electrolyte-gated organic field-effect transistor (EGOFET) to that of an OECT by incorporating an ion exchange gel between the active layer and the aqueous electrolyte. This device works by taking up biologically relevant ions from solution and injecting more hydrophobic ions into the active layer. Using poly[2,5-bis(3-tetradecylthiophen-2-yl) thieno[3,2-b]thiophene] as the active layer and a blend of an ionic liquid, 1-butyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide, and poly(vinylidene fluoride-co-hexafluoropropylene) as the ion exchange gel, four orders of magnitude improvement in device transconductance and a 100-fold increase in kinetics are demonstrated. The ability of the ion-exchange-gel OECT to record biological signals by measuring the action potentials of a Venus flytrap is demonstrated. These results show the possibility of using interface engineering to open up a wider palette of organic semiconductors as OECTs that can be gated by aqueous solutions.

Bischak, Connor G.↗
DOE OSTI2022

Ionic Modulation at the LaAlO 3 /KTaO 3 Interface for Extreme High-Mobility Two-Dimensional Electron Gas

Due to the coexistence of many emergent phenomena, including 2D superconductivity and a large Rashba spin-orbit coupling, 5d transition metal oxides-based two-dimensional electron systems (2DESs) have been prospected as one of the potential intrants for modern electronics. However, despite the lighter electron mass, the mobility of carriers, a key requisite for high-performance devices, in 5d-oxides devices remains far behind their 3d-oxides analogs. The carriers’ mobility in these oxides is significantly hampered by the inevitable presence of defects. Here, in this study, very high mobility (≈22 650 cm 2 V –1 s –1 ) of 5d-2DES confined at the LaAlO 3 /KTaO 3 interface is reported. The high mobility, which is beyond the values observed in SrTiO 3 2DESs in the same carrier-density range, is achieved using the ionic-liquid gating at room temperature. The authors postulate that the ionic-liquid gating affects the oxygen vacancies and efficiently reduces any disorder at the interface. Investigating density and mobility in a broad range of back-gate voltage, the authors reveal that the mobility follows the power-law µ ∝ n 1.2 , indicating the very high quality of ionic-liquid-gated LaAlO 3 /KTaO 3 devices, consistent with the postulate. Furthermore, the analysis of the quantum oscillations confirms that the high-mobility electrons occupy the electronic sub-bands emerging from the Ta:5d orbitals of KTaO 3 .

36 MATERIALS SCIENCE↗
DOE OSTI2021

Entanglement types for two-qubit states with real amplitudes

We study the set of two-qubit pure states with real amplitudes and their geometrical representation in the three-dimensional sphere. In this representation, we show that the maximally entangled states—those locally equivalent to the Bell states—form two disjoint circles perpendicular to each other. We also show that taking the natural Riemannian metric on the sphere, the set of states connected by local gates are equidistant to this pair of circles. Moreover, the unentangled or so-called product states are π/4 units away to the maximally entangled states. This is, the unentangled states are the farthest away to the maximally entangled states. In this way, if we define two states to be equivalent if they are connected by local gates, we have that there are as many equivalent classes as points in the interval [0,π/4] with the point 0 corresponding to the maximally entangled states. The point π/4 corresponds to the unentangled states which geometrically are described by a torus. Finally, for every 0<d<π/4 the point d corresponds to a disjoint pair of torus. Finally, we also show how this geometrical interpretation allows to clearly see that any pair of two-qubit states with real amplitudes can be connected with a circuit that only has single-qubit gates and one controlled-Z gate.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2026

Quantifying atmospheric carbon removal at pulp and paper mills: a life cycle assessment across system boundaries

The pulp and paper industry is a promising yet underexplored platform for large-scale carbon dioxide removal (CDR) due to its use of biogenic feedstocks and production of concentrated CO 2 emissions from point sources. This study presents the first comprehensive life cycle assessment (LCA) of retrofitting an amine-based carbon capture and storage (CCS) system into a representative virgin kraft pulp and paper mill in the Southeastern U.S. We evaluate carbon removal across five system configurations, applying both static and dynamic LCA methods under multiple functional units: CO 2 captured, biomass input, and paper output. Results show that CCS retrofits can convert a conventional mill from a net emitter into a net carbon sink, with total removal efficiencies from 17% to 92% (metric tonnes of CO 2 removed per metric tonne of CO 2 available for removal under selected boundary conditions). When carbon removal is normalized to the quantity of biogenic CO 2 captured—a narrow, gate-to-gate system boundary that considers only CCS facility emissions—removal efficiencies reached as high as 92%. The use of such narrow boundaries aligns with precedents in traditional LCA methodology, where gate-to-gate assessments are commonly applied to isolate process-level performance and allocate emissions accordingly, providing a consistent basis for comparison across technologies. Under broader cradle-to-grave boundaries—which begin tracking carbon at the point of its physical removal from the atmosphere via photosynthesis in the forest, and extend to include upstream forest operations, mill-wide emissions, and downstream product decomposition—efficiencies declined, ranging from 17% to 46% under static assumptions and dropping to 12% when accounting for dynamic biogenic carbon fluxes over time. These results underscore how system boundary definitions influence reported outcomes, while also illustrating the complementary roles of narrow and broad perspectives for different decision-making contexts.

09 BIOMASS FUELS↗
DOE OSTI2025

Development of fiber orientation in injection molding: Comparison of glass fiber, carbon fiber and their hybrid composites

Fiber orientation distribution (FOD) in injection-molded panels with respect to distance from the gate was analyzed using X-ray computed tomography (X-CT) for glass fiber (GF), carbon fiber (CF), and hybrid CF/GF (CGF) reinforced nylon 66. To understand the reason behind the FOD with different fiber types, computational fluid dynamics (CFD) and rheology were performed. Samples were extracted at three locations: near the gate, center, and opposite end. Thickness of the layers of typical skin-shell-core type FOD varied with fiber type and location. GF achieved flow direction alignment (in shell) earlier than viscous CF and CGF near the gate, whereas CF showed the highest flow-direction alignment at the center due to shear induced orientation. At the opposite end, GF experienced more backflow than others indicating faster mold filling owing to its lower viscosity. Hybrid CGF exhibited GF-dominated center and CF-dominated end region. The numerical model used to obtain FOD and rheological predictions for the CF and GF composites served to corroborate the trends observed in the experimental trials. The FOD responses across fiber types and location were reflected in their longitudinal and transverse properties. Only GF showed higher longitudinal modulus over transverse modulus near the gate attributed to rapid alignment, whereas CF and CGF exhibited opposite trend. However, fountain flow enhanced the longitudinal modulus over transverse modulus with the distance for all, particularly for CF. This study offers insights into mold filling behavior of different fibers which are critical in optimizing injection molding conditions for tailored final properties.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Economic and Environmental Analysis to Evaluate the Potential Value of Co-Optima Diesel Bioblendstocks to Petroleum Refiners

The U.S. petroleum refining sector is undergoing a period of historic transformation, catalyzed by the decarbonization of the U.S. economy. Diesel-boiling-range bioblendstocks have gained traction, owing to their superior fuel properties and environmental performance as compared to traditional petroleum fuels. This work couples refinery linear programming models with life cycle assessment to quantify the potential economic and environmental benefits, and trade-offs, of blending diesel-boiling-range bioblendstocks at petroleum refineries. Linear programming models were developed in Aspen Process Industry Modeling Systems (PIMS) for three representative petroleum refinery configurations of differing complexity. Seven diesel-boiling-range bioblendstocks: 4-butoxyheptane, 5-ethyl-4-propylnonane, soy biodiesel, sludge hydrothermal liquefaction diesel, polyoxymethylene ethers, renewable diesel, and hexyl hexanoate, were investigated to identify key fuel properties that influence refineries' economics and to track the effect of adding bioblendstocks on refinery-wide cradle-to-gate greenhouse gases (GHG) emissions. These analyses considered blending levels from 10 to 30 vol% and fuel demand projections over the period 2040 to 2050. This analysis determines that bioblendstock sulfur content and cetane number are the primary fuel attributes with the potential to provide value to refiners. Life cycle assessment results indicate that the use of diesel-boiling-range bioblendstocks can reduce cradle-to-gate refinery GHG emissions by up to ~ 40 % relative to conventional refinery operations when considering carbon uptake in the supply chain of the bioblendstock. Refinery-wide marginal GHG abatement costs range from 120 to 3,600 USD2016/metric tons carbon dioxide equivalent avoided across the scenarios evaluated. Reducing the price of bioblendstocks is identified as a key to their adoption.

ADVANCED PROPULSION SYSTEMS,BIOMASS FUELS,ENERGY P↗
DOE OSTI2025

Simulation-driven design optimization of reaction injection molding (RIM) process for polydicyclopentadiene (pDCPD): Minimizing cycle time, defects, and warpage

Replacing metal components in trucks, trailers, and buses with lightweight polymer composites is challenging due to high temperatures and complex manufacturing. The Reaction Injection Molding (RIM) process using Dicyclopentadiene (DCPD) resin offers a solution by producing robust parts with excellent stiffness, impact strength, and resistance properties. Simulations are essential for optimizing this process, predicting defects, and improving quality. However, most commercial software is tailored for thermoplastics, requiring thermoset users to generate their own datasets. In this study, a material data card for DCPD was developed to perform RIM simulations. Design of Experiments (DOE) was used to identify key factors affecting filling, curing, and warpage, aiming to minimize cycle time and defects. The simulations explored varying injection gate parameters (size, location, number) and process conditions (mold/resin temperature, injection/curing pressure). Results showed that gate design significantly impacts filling behavior and defects. A single central gate provided balanced flow with fewer defects, while two corner gates led to more defects. Additionally, lower injection pressure increased filling time, while higher mold temperature accelerated curing but led to more warpage. In conclusion, this optimization framework aims to enhance DCPD part performance and promote sustainable manufacturing by reducing waste and energy consumption.

42 ENGINEERING↗
DOE OSTI2026

Highly Responsive Near-Infrared Photodetector Based on Contactless PdSe 2 Integration with a Few-Layered MoSe 2 Field-Effect Transistor

Two-dimensional (2D) semiconductors with narrow bandgaps are promising candidates for near- and far-infrared (IR) photodetection, particularly in the telecommunication spectral window. However, current low-bandgap IR photodetectors face significant challenges due to their high dark current, increased carrier recombination, and thermally generated noise. Here, in this work, a hybrid phototransistor is demonstrated by integrating direct, contact-free palladium diselenide (PdSe 2 ) as a highly responsive IR detection layer with a non-IR-absorbing molybdenum diselenide (MoSe 2 ) field-effect transistor (FET), using a near-IR source at a wavelength of λ = 1650 nm. Exfoliated PdSe 2 flakes integrated into a back-gated FET architecture exhibit ambipolar transport behavior, with extracted hole and electron mobilities of 24.8 cm 2 V –1 s –1 and 58.4 cm 2 V –1 s –1 , respectively. The devices show a clear photocurrent generation under the illumination of a λ = 1650 nm laser source, achieving a notable responsivity of ∼300 mA W -1 at an applied gate voltage of 15 V, which highlights the suitability of PdSe 2 as a narrow-bandgap material for photodetection. Photoresponsivity saturates and does not have any effect above an applied gate voltage of 15 V. To further tune the photoresponsivity performance continuously with the applied gate voltage, we construct a van der Waals heterostructure phototransistor, where few layers of PdSe 2 are directly transferred onto the 2D channel region of a MoSe 2 FET, while avoiding any contact with the metal electrodes. In this heterostructure, PdSe 2 works as the primary active IR-absorbing layer, while MoSe 2 provides high-performance FET characteristics. This spatial separation of absorption and transport facilitates efficient interlayer charge transfer and charge separation, resulting in high responsivities of up to 972 mA W –1 at near-IR wavelengths and a low power density of 1.5 mW/mm 2 . The responsivity of our photodetector is comparable to that of some state-of-the-art commercially available NIR photodetectors, highlighting the potential of PdSe 2 -based heterostructures as scalable, CMOS-compatible platforms for high-performance near-IR detection.

Infrared (IR) photodetectors↗