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At least 577 records · Page 32

TinyTPC: A Test Stand for LAr Doping

LArTPCs are widely used in neutrino experiments at the GeV scale. They measure the charge and light produced by interactions between charged particles and argon atoms. While charge is collected efficiently, light is not. TinyTPC is a small scale LArTPC with a pixelated readout for R&D with photosensitive dopants, which convert light into charge. TinyTPC studies the effects of adding photosensitive dopants and xenon to liquid argon to enhance charge signals of events in the MeV scale.

Rodriguez Thorne, Paloma↗

Understanding Twinning and Deformation in High Entropy Alloys

A combination of high strength and high ductility has been observed in multi-principal element alloys due to twin formation attributed to low stacking fault energy (SFE). In the pursuit of low SFE alloys, a key bottleneck is the lack of understanding of the composition–SFE cor- relations that would guide tailoring SFE via alloy composition. Using density functional theory (DFT), we show that dopant radius, which have been postulated as a key descriptor for SFE in dilute alloys, does not fully explain SFE trends across different host metals. Instead, charge density is a much more central descriptor. It allows us to (1) explain contrasting SFE trends in Ni and Cu host metals due to various dopants in dilute concentrations, (2) explain the large SFE variations observed in the literature even within a given alloy composition due to the nearest neighbor environments in “model” concentrated alloys, and (3) develop a machine learning model that can be used to predict SFEs in multi-elemental alloys. This model opens a possibility to use charge density as a descriptor for predicting SFE in alloys. Furthermore, a descriptor-less machine learning (ML) model based only on charge density images extracted from density functional theory (DFT) is developed to predict stacking fault energies (SFE) in concentrated alloys. The model is based on convolutional neural networks (CNNs) as one of the promising ML techniques for dealing with complex images and data. Identification of correct descriptors is a key bottleneck to develop ML models for predicting materials properties. Often, in most ML models, textbook physical descriptors such as atomic radius, valence charge and electronegativity are used as descriptors which have limitations because these properties change in concentrated alloys when multiple elements are mixed to form a solid solution. We illustrate that, within the scope of DFT, the search for descriptors can be circumvented by electronic charge density, which is the backbone of the Kohn-Sham DFT and describes the system completely. The performance of our model is demonstrated by predicting SFE of concentrated alloys with an RMSE and R2 of 6.18 mJ/m2 and 0.87, respectively, validating the accuracy of the proposed approach.

36 MATERIALS SCIENCE↗

Optimizing Simulation Fidelity in Direct-Drive Inertial Confinement Fusion with Cassio

Recently, the National Ignition Facility (NIF) demonstrated that inertial confinement fusion (ICF) is capable to achieve thermonuclear (TN) ignition in the laboratory, making it a crucial method on the path to replicate the Sun’s power production mechanism on Earth. However, the physics governing the high-energy density environments is very complex and remains a challenge to fully understand and model. For example, dopants in the TN fuel are important diagnostic tools to extract the thermodynamic conditions of the plasma. However, if their concentration is chosen too high, they can significantly degrade the performance of an ICF capsule. In this study, we use the Los Alamos National Laboratory radiation-hydrodynamics code Cassio to model ICF implosions of capsules which contain deuterium fuel with high-Z dopants like Krypton and Argon from the high-Z campaign conducted 15 years ago. We focus on how chosen computational and physics parameters influence the implosion outcomes. By systematically changing the resolution of the computational mesh and the photon energies as well as modifying settings for the laser drive and TN fuel pre-heat effects, we assess the impact on experimentally measured performance metrics like neutron production from TN burn and x-ray emission during the implosion. Our results will help to improve the fidelity of simulations and guide future numerical studies and experimental designs.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Property Measurements of LiF-NaF-KF Molten Salts Doped with Corrosion Products and Oxygen

Measurements of thermophysical properties of molten salts are needed for modeling and simulation activities that support the development of molten salt reactor (MSR) technologies. Properties of interest including transition temperatures, phase behavior, heat capacity, density, volumetric thermal expansion, surface tension, viscosity, thermal diffusivity, thermal conductivity, and vapor pressure are being performed at Argonne. Results of these property measurements are suitable for use in evaluating reactor performance during startup and the early operating life of the reactor. Ingressions of oxygen and moisture into the fuel salt are expected to occur at different times during the operating life of the reactor due to system leaks, maintenance, and refueling activities. The presence of these environmental contaminants induces corrosion of structural materials. The introduction of corrosion-derived species, oxygen and moisture is expected to affect the physical and chemical properties of the salt and operation of the reactor. Previous work performed at Argonne evaluated the effects of fission product dopants on the thermal properties of eutectic LiF-NaF-KF (FLiNaK). Properties of FLiNaK are commonly used to represent those of fluoride-bearing fuel salts. Metallic corrosion products such as chromium and nickel ions together with dissolved oxygen are expected to affect system redox differently than the accumulation of fission products. Work summarized in this report was performed to measure the effects of corrosion products and dissolved oxygen on the phase transitions, and specific heat capacity of FLiNaK. Thermophysical property measurements were made using four salts that were prepared by doping aliquots of a eutectic mixture of FLiNaK with surrogate corrosion products. Controlled additions of CrF 3 and NiF 2 were used as surrogates for corrosion product contamination anticipated during extended reactor operations in which fuel salt is in contact with steel reactor components. Controlled additions of UF 4 from two sources containing known amounts of UO 2 at different concentrations were used to represent oxygen contamination. The phase transitions and specific heat capacities of the four salts were measured by using differential scanning calorimetry. Measurements were made at temperatures spanning the range of 500−900 °C, which is the expected operating range of MSRs. Measured property values were compared to values measured previously with eutectic FLiNaK without dopants. Differences between property values measured for the doped and non-doped salts were compared with the uncertainties of the measurements to determine the significance of the effect of corrosion products and oxygen on salt properties.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗

Nanoscale Superconducting States in the Fe-Based Filamentary Superconductor of Pr-Doped CaFe 2 As 2

The low-temperature scanning tunneling microscope and spectroscopy (STM/STS) are used to visualize superconducting states in the cleaved single crystal of 9% praseodymium-doped CaFe 2 As 2 (Pr-Ca122) with Tc ≈ 30 K. The spectroscopy shows strong spatial variations in the density of states (DOS), and the superconducting map constructed from spectroscopy discloses a localized superconducting phase, as small as a single unit cell. The comparison of the spectra taken at 4.2 K and 22 K (below vs. close to the bulk superconducting transition temperature) from the exact same area confirms the superconducting behavior. Nanoscale superconducting states have been found near Pr dopants, which can be identified using dI/dV conductance maps at +300 mV. There is no correlation of the local superconductivity to the surface reconstruction domain and surface defects, which reflects its intrinsic bulk behavior. We, therefore, suggest that the local strain of Pr dopants is competing with defects induced local magnetic moments; this competition is responsible for the local superconducting states observed in this Fe-based filamentary superconductor.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Moessbauer spectroscopic studies of iron-doped rutile.

Moessbauer spectra were obtained of single crystal and powdered samples of rutile (TiO2) doped to about one percent by weight in isotopically enriched iron. It is shown that the oxidation state may be reversibly altered in situ. After reduction, the oxygen neighbors of the dopant ion are apparently shifted to accomodate the larger ferrous ion. The agreement of calculated quadrupole splittings with experimental results suggests that impurities and oxygen vacancies are uniformly distributed in powdered samples, giving the dopant ions an 'ideal lattice' local environment. The differences between the single crystal and powder sample hyperfine parameters are attributed to variations in stoichiometry, charge compensation mechanisms, or other diffusion related parameters.

Stampfl, P. P.↗

Angular dependence of optical scattering in mixed nematic-cholesteric liquid crystals.

The basic ternary cholesteric mixture used in the investigations reported contained by weight 1.1 parts of cholesteryl chloride, 0.9 parts of cholesteryl nonanoate, and 2.0 parts cholesteryl oleyl carbonate. Samples were prepared by adding a nematic dopant to the cholesteric mixture. Measurements of the wavelength of maximum scattering at different angles for the doped samples show that the angular color distortion is reduced with increasing concentrations of nematic dopant.

Oron, N.↗

Segregation behavior in a stationary vertical zone with converging interfaces - Pressure-induced segregation effects

Crystal growth and segregation were investigated in a confined vertical melt zone in which the upper solid-melt interface advanced under destabilizing and the lower interface under stabilizing thermal gradients. A technique reported by Kim et al. (1972) was used in the study. The experimental results are discussed, giving attention to interface morphology and growth rate and questions of dopant segregation. Dopant inhomogeneities formed simultaneously in both advancing interfaces can be explained on the basis of pressure induced segregation effects.

Kim, K. M.↗

The time and temperature dependence of the thermoelectric properties of silicon-germanium alloy

Experimental data on the electrical resistivity and Seebeck coefficient of n-type and p-type silicon-germanium alloys are analyzed in terms of a solid-state dopant precipitation model proposed by Lifshitz and Slyozov (1961). Experimental findings on the time and temperature dependence of the thermal conductivity of these two types of alloy indicate that the thermal conductivity of silicon-germanium alloys changes with time, contrary to previous hypothesis. A preliminary model is presented which stipulates that the observed thermal conductivity decrease in silicon-germanium alloys is due partly to dopant precipitation underlying the electrical property changes and partly to enhanced alloying of the material. It is significant that all three properties asymptotically approach equilibrium values with time. Total characterization of these properties will enable the time change to be fully compensated in the design of a thermoelectric device employing silicon-germanium alloys.

Raag, V.↗

Quantitative determination of zero-gravity effects on crystal growth from the melt (experiment MA-060)

The purpose of experiment MA-060 was to investigate quantitatively the effects of near-zero gravity conditions on crystal growth and dopant segregation during directional solidification from the melt. Gallium-doped germanium single crystals were successfully grown from the melt with simultaneous interface demarcation during the Apollo Soyuz Test Project mission. The analysis of the experimental data indicates striking differences of dopant segregation and growth behavior in the presence and absence of gravity. The results obtained are believed to have far-reaching implications on materials processing under zero-gravity conditions and on the theory of crystal growth and segregation in general.

Gatos, H. C.↗

Transmutation doping of silicon solar cells

Normal isotopic silicon contains 3.05% of Si-30 which transmutes to P-31 after thermal neutron absorption, with a half-life of 2.6 hours. This reaction is used to introduce extremely uniform concentrations of phosphorus into silicon, thus eliminating the areal and spatial inhomogeneities characteristic of chemical doping. Annealing of the lattice damage in the irradiated silicon does not alter the uniformity of dopant distribution. Transmutation doping also makes it possible to introduce phosphorus into polycrystalline silicon without segregation of the dopant at the grain boundaries. The use of neutron transmutation doped (NTD) silicon in solar cell research and development is discussed.

Wood, R. F.↗

Application of semiconductor diffusants to solar cells by screen printing

Diffusants were applied onto semiconductor solar cell substrates, using screen printing techniques. The method was applicable to square and rectangular cells and can be used to apply dopants of opposite types to the front and back of the substrate. Then, simultaneous diffusion of both dopants can be performed with a single furnace pass.

Evans, J. C., Jr.↗

Nb3Ge as a potential candidate material for 15- to 25-T magnets

The critical temperature, upper critical field and structure of Nb3Ge materials produced by sputtering onto sapphire or by chemical vapor deposition on sapphire or Hastelloy were determined. In the case of the samples formed by deposition, several dopants, including Nb5Ge3, NbN and NbC were used. A variety of deposition temperatures were studied. Highest upper critical field values were obtained in samples deposited in the 750 to 850 C range. The degree of flux pinning exhibited a correlation with grain size. The presence of an impurity dopant had a depressant effect on the critical temperature and upper critical field.

Daniel, M. R.↗

Study of the effects of impurities on the properties of silicon materials and performance of silicon solar cell

Zinc is a major residue impurity in the preparation of solar grade silicon material by the zinc vapor reduction of silicon tetrachloride. It was found that in order to get a 17 percent AMl cell efficiency, the concentration of the zinc recombination centers in the base region of silicon solar cells must be less than 4 x 10 to the 11th power Zn/cu cm in the p-base n+/p/p+ cell and 7 x 10 to the 11th power Zn/cu cm in the n-base p+/n/n+ cell for a base dopant impurity concentration of 5 x 10 to the 14th power atoms/cu cm. If the base dopant impurity concentration is increased by a factor of 10 to 5 x 10 to the 15th power atoms/cu cm, then the maximum allowable zinc concentration is increased by a factor of about two for a 17 percent AMl efficiency. The thermal equilibrium electron and hole recombination and generation rates at the double acceptor zinc cancers were obtained from previous high field measurements as well as new measurements at zero field. The rates were used in the exact d.c. circuit model to compute the projections.

Sah, C. T.↗

Evaluation of high specific-heat ceramic for regenerator use at temperatures between 2-30 K

Specific heat, thermal conductivity (both in the range 2-30 K), and microhardness data were measured on the ceramics labelled LS-8, LS-8A, and LS-8A doped with CsI, SnCl2, and AgCl. A work hardened sample of LS-8A was also studied in an effort to determine the feasibility of using these types of LS-8 materials to replace Pb spheres in the regenerator of the JPL cryocooler. The LS-8A materials are all more than an order of magnitude harder than Pb, and the dopants do not significantly improve the hardness. However, the SnCl2 dopant has a remarkable effect in improving the specific heat and thermal conductivity of LS-8A. The SnCl2 doping level which maximized the regenerator enthalpy change in going from an unloaded to a loaded condition was found to be 0.2 percent SnCl2 in LS-8A. It was also found that the enthalpy change for a regenerator employing the LS-8A material is more than three times larger than for the Pb spheres case. The use of rods, rather than spheres, of optimally doped LS-8A in regenerators is discussed.

Lawless, W. N.↗

Effect of zinc impurity on silicon solar-cell efficiency

Zinc is a major residue impurity in the preparation of solar-grade silicon material by the zinc vapor reduction of silicon tetrachloride. This paper projects that in order to get a 17-percent AM1 cell efficiency for the Block IV module of the Low-Cost Solar Array Project, the concentration of the zinc recombination centers in the base region of silicon solar cells must be less than 4 x 10 to the 11th Zn/cu cm in the p-base n+/p/p+ cell and 7 x 10 to the 11th Zn/cu cm in the n-base p+/n/n+ cell for a base dopant impurity concentration of 5 x 10 to the 14 atoms/cu cm. If the base dopant impurity concentration is increased by a factor of 10 to 5 x 10 to the 15th atoms/cu cm, then the maximum allowable zinc concentration is increased by a factor of about two for a 17-percent AM1 efficiency. The thermal equilibrium electron and hole recombination and generation rates at the double-acceptor zinc centers are obtained from previous high-field measurements as well as new measurements at zero field described in this paper. These rates are used in the exact dc-circuit model to compute the projections.

Sah, C.-T.↗

Defect chemistry and characterization of Hg sub 1x Cd sub x Te

Single crystal samples of undoped and doped Hg sub 1-x Cd sub x Te were annealed at varying temperatures and partial pressures of Hg. Hall effect and mobility measurements were carried out on these samples after quenching to room temperature. Based on the variation of the carrier concentration and the carrier mobility as a function of the partial pressure of Hg temperature, and dopant concentration, defect models were established for the doped and the undoped crystals. These models indicate that the native acceptor defects in both Hg0.8Cd0.2Te and Hg0.6Cd0.4Te doubly ionized and the native donor defects are negligible in concentration, implying that p to n conversion in these alloys occurs due only to residual donors. Incorporation mechanism of copper, indium, iodine, and phosphorus were investigated. A large concentration of indium is found to be paired with the native acceptor defects. Results on crystals doped with phosphorus indicate that phosphorus behaves amphoterically, acting as a donor on Hg lattice sites and as an acceptor intersitially on Te lattice sites. A majority of the phosphorus is found to be present as neutral species formed from the pairing reaction between phosphorus on Hg lattice sites and phosphorus in interstitial sites. Equilibrium constants for the intrinsic excitation reaction, as well as for the incorporation of the different dopants and the native acceptor defects were established.

Vydyanath, H. R.↗

Thickness dependences of solar cell performance

The significance of including factors such as the base resistivity loss for solar cells thicker than 100 microns and emitter and BSF layer recombination for thin cells in predicting the fill factor and efficiency of solar cells is demonstrated analytically. A model for a solar cell is devised with the inclusion of the dopant impurity concentration profile, variation of the electron and hole mobility with dopant concentration, the concentration and thermal capture and emission rates of the recombination center, device temperature, the AM1 spectra and the Si absorption coefficient. Device equations were solved by means of the transmission line technique. The analytical results were compared with those of low-level theory for cell performance. Significant differences in predictions of the fill factor resulted, and inaccuracies in the low-level approximations are discussed.

Sah, C. T.↗