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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 577 records · Page 32
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Chalcogenide perovskite BaZrS 3 thin-film electronic and optoelectronic devices by low temperature processing

Owing to its superior visible light absorption and high chemical stability, chalcogenide perovskite barium zirconium sulfide (BaZrS 3 ) has attracted significant attention in the past few years as a potential alternative to hybrid halide perovskites for optoelectronics. However, the high processing temperatures of BaZrS 3 thin films at above 1000 °C severely limits their potential for device applications. Herein, we report the synthesis of BaZrS 3 thin films at temperatures as low as 500 °C, by changing the chemical reaction pathway. The single phase BaZrS 3 thin film was confirmed by X-ray diffraction and Raman spectroscopy. Atomic force microscopy and scanning electron microscopy show that crystalline size and surface roughness were consistently reduced with decreasing annealing temperature. The lower temperatures further eliminate sulfur vacancies and carbon contaminations associated with high temperature processing. The ability to synthesize chalcogenide perovskite thin films at lower temperatures removes a major hurdle for their device fabrication. The photodetectors demonstrate fast response and an on/off ratio of 80. Finally, the fabricated field effect transistors show an ambipolar behavior with electron and hole mobilities of 16.8 cm 2 /Vs and 2.6 cm 2 /Vs, respectively.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Recent progress in the development of liquid metal plasma facing components for magnetic fusion devices

One of the most critical challenges for future fusion reactors is to develop longevity plasma-facing components (PFCs) exposed to extremely high heat and neutron loads. As opposed to those employing solid metals, PFCs with flowing liquid metals (LM) have shown self-healing, heat removal and good impurity control capabilities, all essential to fusion devices. Recently, significant progress in LM-PFC development has been reported globally, with data from several magnetic fusion devices. These studies reveal that LM-PFCs can endure extreme heat fluxes while maintaining plasma compatibility. New design concepts have been proposed and numerically analyzed, advancing models for liquid PFCs in future reactors. Despite existing technical challenges, these developments suggest that LM-PFCs hold promise for future fusion applications.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Hexagonal boron nitride: Epitaxial growth and device applications

As a newest family member of the III-nitrides, BN is considered amongst the remaining frontiers in wide energy bandgap semiconductors with potentials for technologically significant applications in deep UV (DUV) optoelectronics, solid-state neutron detectors, electron emitters, single photon emitters, switching/memory devices, and super-capacitors. It was shown that it is possible to produce h-BN epilayers with high hexagonal phase purity, UV transparency, and film stoichiometry by employing nitrogen-rich growth conditions. The quasi-2D nature of h-BN supports unusually strong optical transitions near the band edge and a large exciton binding energy on the order of 0.7 eV. Since the isotope of B-10 has a large capture cross-section for thermal neutrons, h-BN is an ideal material for the fabrication of solid-state neutron detectors for special nuclear materials detection, well and geothermal logging, and medical imaging applications. Freestanding B-10 enriched h-BN (h- 10 BN) epilayers with varying thicknesses up to 200 μm have been successfully synthesized by metal organic chemical vapor deposition (MOCVD) as of this writing. By utilizing the conductivity anisotropy nature of h-BN, 1 cm 2 lateral detectors fabricated from 100 μm thick h-10BN epilayers have demonstrated a detection efficiency of 59% for thermal neutrons, which is the highest on record among all solid-state neutron detectors as of today. It was noted that high growth temperatures, long growth times and the use of sapphire substrate tend to incorporate oxygen related impurities into h- 10 BN epilayers, which strongly impacted the carrier mobility-lifetime (μτ) products and charge collection efficiencies of h- 10 BN neutron detectors. As the h-BN material technology further develops, improved carrier mobilities and μτ products will allow the fabrication of h-BN devices with enhanced performance.

42 ENGINEERING↗
DOE OSTI2020

Using hole injection layers for decreased metastability and higher performance in Cu(In,Ga)Se 2 devices

In this work, modifications to the buffer structure in Cu(In,Ga)Se 2 (CIGS) solar cells are examined in terms of power conversion efficiency and metastability. Varying amounts of thin hole-injecting layers are introduced at different locations in the CIGS/Zn(O,S) device structure. It is found that such layers simultaneously increase performance and decrease metastability. The most effective variant produces devices without metastability and with higher efficiency than the CdS-only controls. The most effective location for hole injection is found to be between the Zn(O,S) buffer and the transparent conductor. At this location, passivation of the CIGS surface is not a function of the hole injection layer, and thus a variety of materials with appropriate band-edge energies should achieve the same purpose.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Turbulence and transport in mirror geometries in the Large Plasma Device

Thanks to advances in plasma science and enabling technology, mirror machines are being reconsidered for fusion power plants and as possible fusion volumetric neutron sources. However, cross-field transport and turbulence in mirrors remains relatively understudied compared with toroidal devices. Turbulence and transport in mirror configurations were studied utilizing the flexible magnetic geometry of the Large Plasma Device (LAPD). Multiple mirror ratios from $M=1$ to $M=2.68$ and three mirror-cell lengths from $L=3.51$ to $L=10.86$ m were examined. Langmuir and magnetic probes were used to measure profiles of density, temperature, potential and magnetic field. The electric field-fluctuation-driven ${\tilde {\boldsymbol{E}}} \times {\boldsymbol{B}}$ particle flux, where $\boldsymbol{B}$ is the background field, was calculated from these quantities. Two probe correlation techniques were used to infer wavenumbers and two-dimensional structure. Cross-field particle flux and density fluctuation power decreased with increased mirror ratio. Core density and temperatures remain similar with mirror ratio, but radial line-integrated density increased. The physical expansion of the plasma in the mirror cell by using a higher field in the source region may have led to reduced density fluctuation power through the increased gradient scale length. This increased scale length reduced the growth rate and saturation level of rotational interchange and drift-like instabilities. Despite the introduction of magnetic curvature, no evidence of mirror-driven instabilities – interchange, velocity space or otherwise – were observed. For curvature-induced interchange, many possible stabilization mechanisms were present, suppressing the visibility of the instability.

Travis, Phil (ORCID:0000000343170432)↗
DOE OSTI2022

Combining Spatial and Temporal Resolution in Cryo-TEM of Device Materials: Preprint

Cryogenic transmission electron microscopy (cryo-TEM) has been instrumental to reducing the effects of electron-beam sample interactions and enabling higher spatial resolution studies of beam sensitive materials. However, the process of thinning and freezing samples for cryo-TEM characterization is often complex and frequently involves removing materials from their environment or stimuli of interest for extended times. This can allow for structural relaxation, diffusion, and other dynamic processes to occur prior to characterization; for energy materials like battery electrodes, this makes it difficult to precisely correlate the imaged structure with native structures that evolve in-situ during device processing, operation, or aging. Here, we present methods to prepare cryo-TEM samples from energy materials during these critical processes in the relevant device lifetimes. This offers insights into improving the temporal resolution of cryo-TEM, while still exploiting its ability to achieve high spatial resolutions in characterizing beam sensitive materials.

BASIC BIOLOGICAL SCIENCES,MATERIALS SCIENCE↗
DOE OSTI2021

Predicting the onset of metal-insulator transitions in transition metal oxides-A first step in designing neuromorphic devices.

Several transition metal oxides, including La1-xSrxCoO3, are promising materials to realize resistive switching devices for neuromorphic applications, as they can undergo a metal-to-insulator transition (MIT) upon small perturbations to their electronic structure. Here, we focus on the MIT induced by varying the oxygen vacancy concentration, and we propose a model to predict the required electrical bias, based on three fundamental quantities: the vacancy formation energy, the permanent polarization in the material, and its dielectric constant. We obtain these quantities using first-principles electronic structure calculations, and we discuss strategies to minimize the electrical bias which may be adopted experimentally to design and optimize neuromorphic devices.

Zhang, Shenli↗
DOE OSTI2021

Corrosion Prevention of Additively Manufactured Aluminum Packing Devices Developed for Process Intensification of CO 2 Capture by Aqueous Amines

Corrosion of additively manufactured (i.e., 3D printed) aluminum packing devices, developed to enhance heat and mass transfer in CO 2 absorption columns using amine-CO 2 scrubbing solutions, is investigated in this paper. The aluminum structures printed by selective laser melting with Al-10Si-0.3Mg feed powder are susceptible to corrosion in aqueous monoethanolamine, both fresh and used CO 2 -saturated solutions. The efficacy of corrosion-protective surface layers of aqueous polyether–ketone–ketone (PEKK) dip coating to provide amine corrosion resistance to the 3D printed aluminum structure is also evaluated. PEKK nanothick layers were coated on the corrugated surface of a 3D printed structure, identical to that of the intensified device, yielding 27 times higher corrosion resistance than the uncoated Al alloy surface. Finally, a systematic long-term electrochemical corrosion analysis revealed that a multilayer PEKK dip coating protocol enables protection of the 3D printed Al alloy surface in various CO 2 –monoethanolamine solutions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

All-Carbon Nanotube Solar Cell Devices Mimic Photosynthesis

We report that both solar cells and photosynthetic systems employ a two-step process of light absorption and energy conversion. In photosynthesis, they are performed by distinct proteins. However, conventional solar cells use the same semiconductor for optical absorption and electron-hole separation, leading to inefficiencies. Here, we show that an all-semiconducting single-walled carbon nanotube (s-SWCNTs) device provides an artificial system that models photosynthesis in a tandem geometry. We use distinct chirality s-SWCNTs to separate the site and direction of light absorption from those of power generation. Using different bandgap s-SWCNTs, we implement an energy funnel in dual-gated p-n diodes. The device captures photons from multiple regions of the solar spectrum and funnels photogenerated excitons to the smallest bandgap s-SWCNT layer, where they become free carriers. We demonstrate an increase in the photoresponse by adding more s-SWCNT layers of different bandgaps without a corresponding deleterious increase in the dark leakage current.

14 SOLAR ENERGY↗
DOE OSTI2023

Gate-Tunable Multiband Transport in ZrTe 5 Thin Devices

Interest in ZrTe 5 has been reinvigorated in recent years owing to its potential for hosting versatile topological electronic states and intriguing experimental discoveries. However, the mechanism of many of its unusual transport behaviors remains controversial: for example, the characteristic peak in the temperature-dependent resistivity and the anomalous Hall effect. Here, through employing a clean dry-transfer fabrication method in an inert environment, we successfully obtain high-quality ZrTe 5 thin devices that exhibit clear dual-gate tunability and ambipolar field effects. Such devices allow us to systematically study the resistance peak as well as the Hall effect at various doping densities and temperatures, revealing the contribution from electron–hole asymmetry and multiple-carrier transport. By comparing with theoretical calculations, we suggest a simplified semiclassical two-band model to explain the experimental observations. Finally, our work helps to resolve the longstanding puzzles on ZrTe 5 and could potentially pave the way for realizing novel topological states in the two-dimensional limit.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Hot-Carrier Extraction in Nanowire-Nanoantenna Photovoltaic Devices

Nanowires bring new possibilities to the field of hot-carrier photovoltaics by providing flexibility in combining materials for band engineering and using nanophotonic effects to control light absorption. Previously, an open-circuit voltage beyond the Shockley–Queisser limit was demonstrated in hot-carrier devices based on InAs–InP–InAs nanowire heterostructures. However, in these first experiments, the location of light absorption, and therefore the precise mechanism of hot-carrier extraction, was uncontrolled. In this study, we combine plasmonic nanoantennas with InAs–InP–InAs nanowire devices to enhance light absorption within a subwavelength region near an InP energy barrier that serves as an energy filter. From photon-energy- and irradiance-dependent photocurrent and photovoltage measurements, we find that photocurrent generation is dominated by internal photoemission of nonthermalized hot electrons when the photoexcited electron energy is above the barrier and by photothermionic emission when the energy is below the barrier. We estimate that an internal quantum efficiency up to 0.5–1.2% is achieved. Insights from this study provide guidelines to improve internal quantum efficiencies based on nanowire heterostructures.

14 SOLAR ENERGY↗
DOE OSTI2024

Internal Photoemission Spectroscopy Measurements of Interfacial Energy Barriers in Operating TaN/Hf 0.5 Zr 0.5 O 2 /TaN Metal/Ferroelectric/Metal (MFM) Devices

The effect of the "waking" and subsequent "poling" operations on the electron barriers at both top and bottom electrode interfaces in operating ferroelectric hafnium zirconium oxide (Hf 0.5 Zr 0.5 O 2 , HZO) metal/ferroelectric/metal (MFM) devices are measured for the first time via internal photoemission (IPE) spectroscopy. Top and bottom (TaN/HZO and HZO/TaN) barriers for pristine devices were measured at 2.6 eV and 2.9 eV, respectively. The waking operation (10 kHz bipolar voltage cycling above the coercive field) increased the top barrier to 2.8 eV while leaving the bottom barrier essentially unchanged. Poling operations (application of a longer 10 msec unipolar pulse) were found to significantly decrease both top and bottom barriers. Here, the poling direction (polarity) had relatively little impact. The barrier for the top interface under positive (P↓) and negative poling (P↑) was 2.1 and 2.2 eV, respectively, while the bottom barrier was 2.3 eV for P↓ and 2.4 eV for P↑. All barrier heights remained unchanged after several months at room temperature. Potential physical mechanisms responsible for the changes observed under electrical operation are consistent with movement and/or creation of charged oxygen vacancy defects.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Influence of Disorder on the Electronic Properties and Magnetotransport of Ti 3 C 2 T x Single-Flake Devices

The exploration of MXenes for electronic applications is a rapidly growing field in materials science. However, most research has focused on MXene films, with only a limited number of studies addressing the characterization of single-flake devices. In this work, we investigate the electronic and magnetotransport properties of Ti 3 C 2 T x single-flake devices, exploring the influence of structural defectivity on their transport mechanisms. We show that negative magnetoresistance present at low temperatures in single flake samples arises from weak localization, which we analyze to extract the phase coherence length of single-layer and multi-layer flakes. The study of magnetoresistance for this metallic MXene shows that the material exhibits quantum transport phenomena when intrinsic electronic behavior dominates. Moreover, by increasing the defect density via thermal annealing in ultrahigh vacuum, we uncover and characterize the metal-to-disordered metal transition in Ti 3 C 2 T x , shedding light on new properties and enriching fundamental knowledge about MXenes.

MXenes↗
DOE OSTI2022

Influence of Copper Composition on Cu 2 BaSn(S,Se) 4 Solution-Deposited Films and Photovoltaic Devices with Over 5% Efficiency

Cu 2 BaSn(S,Se) 4 is currently in the spotlight for prospective environmentally friendly, stable, thin-film solar cell application, with demonstrated device power conversion efficiency (PCE) exceeding 5% for vacuum-deposited absorbers. As suggested by first-principles calculations, experimental studies involving related Cu 2 ZnSn(S,Se) 4 and Cu(In,Ga)(S,Se) 2 absorbers prove that the detailed chemical composition typically plays a sensitive role in altering defects and electronic properties of these complicated compound semiconductors. Herein, the copper composition of Cu 2 BaSn(S,Se) 4 has been systematically modified, employing a solution-based deposition approach, to provide a more complete picture of the phase stability and optoelectronic property sensitivity for this material. X-ray diffraction and scanning electron microscopy show that phase purity is preserved over a film Cu content range of nominally 0.94 ≤ [Cu]/[Ba + Sn] ≤ 1.01. Terahertz spectroscopy and Hall effect measurements reveal that the majority carrier hole density of ~10 13 cm –3 and mobility (~5 cm 2 /V s), as well as the minority carrier lifetime (a bulk lifetime of 180 ps and a surface recombination velocity >106 cm/s), are nominally independent of Cu content. The champion PCEs exceed 4.7% for all copper compositions in the phase-pure region, with a record value of 5.1%, similar to the reported values for record vacuum-deposited devices. Furthermore, these results suggest that Cu 2 BaSn(S,Se) 4 films and solar cells (at the current performance level) may be less sensitive to Cu stoichiometry compared to kesterite materials and therefore may provide a more stable material platform to prepare thin-film solar cells.

(CBTSSe)↗
DOE OSTI2023

Quaternized Polynorbornene Random Copolymers for Fuel Cell Devices

Quaternized polymers are critical components for various energy devices. Vinyl-addition polynorbornenes provide high mechanical strength, high ion conductivity, and chemical stability in a wide range of pH environments due to the all-C–C bond backbone. In this paper, we present the synthesis of a series of quaternized polynorbornene random copolymers via vinyl addition polymerization and elucidate the impact of polymer composition on their properties. The quaternary ammonium alkyl tether length and the ratio of n-hexylnorbornene to unsubstituted norbornene are systemically tailored. A copolymer of 5-(3-bromopropyl)-2-norbornene and norbornene with pendant trimethylammonium groups achieved hydroxide conductivity of 109 mS/cm at 80 °C with a modest water uptake of 72%. The addition of n-hexylnorbornene to the copolymer, to make a terpolymer, allows for the polymer composition to be tailored for properties, including a decrease in water uptake and higher processability, despite a slightly decreased hydroxide conductivity. Moreover, the developed membranes are chemically robust and highly mechanically stable, enabling thin membranes to be easily fabricated. This study provides insight into important design parameters for quaternized polynorbornenes for a variety of energy storage and conversion devices, especially fuel cells.

25 ENERGY STORAGE↗
DOE OSTI2026

Relief Zones Enhance the Durability of Ultrathin Membranes in Electrochemical Conversion Devices

Premature failures in electrochemical conversion systems often result when membrane electrode assemblies (MEAs) use ultrathin (≤15 μm-thick) polymer electrolyte membranes, susceptible to mechanical degradation from stress concentrations arising from device-level integration. Herein, relief zones were developed to mitigate mechanical degradation by alleviating excess and nonuniform compression across active areas. Relief zones, created through ablation of carbonaceous diffusion media, enable seamless adaptation across MEA dimensions without need for hardware modifications. Demonstrated using fuel cells as a case study, accelerated stress tests revealed a 6-fold lifetime improvement (∼1500 h) compared to conventional edge-protected MEAs, decoupling device-level engineering effects from material limitations.

accelerated stress test↗
DOE OSTI2023

Plasmonic Terahertz Devices and Sensors Based on Carbon Electronics

Tunable terahertz (THz) photonic devices are imperative in a wide range of applications ranging from THz signal modulation to molecular sensing. One of the currently prevailing methods is based on arrays of metallic or dielectric resonators integrated with functional materials in response to an external stimulus, in which for the purpose of sensing the external stimuli may introduce inadvertent undesirable effects into the target samples to be measured. Here we developed an alternative approach by postprocessing nanothickness macro-assembled graphene (nMAG) films with widely tunable THz conductivity, enabling versatile solid-state THz devices and sensors, showing multifunctional nMAG-based applications. The THz conductivities of free-standing nMAGs showed a broad range from 1.2 x 10 3 S/m in reduced graphene oxide before annealing to 4.0 x 10 6 S/m in a nMAG film annealed at 2800 °C. We fabricated nMAG/dielectric/metal and nMAG/dielectric/nMAG THz Salisbury absorbers with broad reflectance ranging from 0% to 80%. The highly conductive nMAG films enabled THz metasurfaces for sensing applications. Taking advantage of the resonant field enhancement arising from the plasmonic metasurface structures and the strong interactions between analyte molecules and nMAG films, we have successfully detected diphenylamine with a limit of detection of 4.2 pg. Those wafer-scale nMAG films present promising potential in high-performance THz electronics, photonics, and sensors.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Selected Area Manipulation of MoS 2 via Focused Electron Beam-Induced Etching for Nanoscale Device Editing

Here we demonstrate direct-write patterning of single and multilayer MoS 2 via a focused electron beam-induced etching (FEBIE) process mediated with the XeF 2 precursor. MoS 2 etching is performed at various currents, areal doses, on different substrates, and characterized using scanning electron and atomic force microscopies as well as Raman and photoluminescence spectroscopies. Scanning transmission electron microscopy reveals a sub-40 nm etching resolution and the progression of point defects and lateral etching of the consequent unsaturated bonds. The results confirm that the electron beam-induced etching process is minimally invasive to the underlying material in comparison to ion beam techniques, which damage the subsurface material. Single-layer MoS 2 field-effect transistors are fabricated, and device characteristics are compared for channels that are edited via the selected area etching process. The source–drain current at constant gate and source–drain voltage scale linearly with the edited channel width. Moreover, the mobility of the narrowest channel width decreases, suggesting that backscattered and secondary electrons collaterally affect the periphery of the removed area. Focused electron beam doses on single-layer transistors below the etching threshold were also explored as a means to modify/thin the channel layer. The FEBIE exposures showed demonstrative effects via the transistor transfer characteristics, photoluminescence spectroscopy, and Raman spectroscopy. While strategies to minimize backscattered and secondary electron interactions outside of the scanned regions require further investigation, here, we show that FEBIE is a viable approach for selective nanoscale editing of MoS 2 devices.

36 MATERIALS SCIENCE↗