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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 577 records · Page 32
All sourcesNASA NTRSDOE OSTI
NASA NTRS1984

Performance of large-eddy breakup devices at post-transitional Reynolds numbers

Large-eddy alteration techniques were used to modify the drag characteristics of the turbulent boundary layer. Local skin-friction coefficients were measured for single and multi-element arrays of thin plates suspended in a fully turbulent, flat plate, boundary layer at R(theta) = 3,000. Effects of these devices were measured more than 300 boundary-layer thicknesses downstream to R(theta) = 17,000. It was found that although most of the devices reduced the local skin friction immediately downstream, this reduced skin-friction region persisted for only 100-120 delta-0, after which a rapid rise in skin-friction coefficient occurred, often exceeding flat plate values. Net drag reductions were obtained only for tandem configurations and these reductions were sensitive to device spacing and height. The maximum net drag reduction reported was approximately 7 percent with a device spacing of 10 delta-0 at a height of 0.8 delta-0.

Anders, J. B.↗
NASA NTRS1985

Electrical performance of semiconductor devices at cryogenic temperatures

The electrical performance of semiconductor devices is examined over the temperature range from 300 to 1.4K The design, fabrication, and testing of p-channel field effective transistors (MOSFET) are emphasized to develop a device that will perform satisfactorily in the temperature range from 4.2 to 1.4K. The current-voltage characteristics of the device are obtained as a function of temperature for varying channel lengths and channel dopant levels. The MOSFET's with average channel lengths of 3.27, 5.68, 8.37, and 11.39 microns are examined. It is indicated that the devices with the shorter channel lengths perform better in the 4 to 20K range than those with the longer channel lengths.

Ventrice, C. A.↗
NASA NTRS1985

Effects of leading-edge devices on the low-speed aerodynamic characteristics of a highly-swept arrow-wing

An investigation was conducted in the Texas A&M University 7 by 10 foot Low Speed Wind Tunnel to provide a direct comparison of the effect of several leading edge devices on the aerodynamic performance of a highly swept wing configuration. Analysis of the data indicates that for the configuration with undeflected leading edges, vortex separation first occurs on the outboard wing panel for angles of attack of approximately 2, and wing apex vorticies become apparent for alpha or = 4 deg. However, the occurrence of the leading edge vortex flow may be postponed with leading edge devices. Of the devices considered, the most promising were a simple leading edge deflection of 30 deg and a leading edge slat system. The trailing edge flap effectiveness was found to be essentially the same for the configuration employing either of these more promising leading edge devices. Analysis of the lateral directional data showed that for all of the concepts considered, deflecting leading edge downward in an attempt to postpone leading edge vortex flows, has the favorable effect of reducing the effective dihedral.

Scott, S. J.↗
NASA NTRS1985

Materials requirements for optical processing and computing devices

Devices for optical processing and computing systems are discussed, with emphasis on the materials requirements imposed by functional constraints. Generalized optical processing and computing systems are described in order to identify principal categories of requisite components for complete system implementation. Three principal device categories are selected for analysis in some detail: spatial light modulators, volume holographic optical elements, and bistable optical devices. The implications for optical processing and computing systems of the materials requirements identified for these device categories are described, and directions for future research are proposed.

Tanguay, A. R., Jr.↗
NASA NTRS1985

Generalized reciprocity theorem for semiconductor devices

A reciprocity theorem is presented that relates the short-circuit current of a device, induced by a carrier generation source, to the minority-carrier Fermi level in the dark. The basic relation is general under low injection. It holds for three-dimensional devices with position dependent parameters (energy gap, electron affinity, mobility, etc.), and for transient or steady-state conditions. This theorem allows calculation of the internal quantum efficiency of a solar cell by using the analysis of the device in the dark. Other applications could involve measurements of various device parameters, interfacial surface recombination velocity at a polcrystalline silicon emitter contact, for rexample, by using steady-state or transient photon or mass-particle radiation.

Misiakos, K.↗
NASA NTRS1987

Four-terminal electrical testing device

The invention relates to a four-terminal electrical connector device for testing and measuring unknown resistances of initiators used for starting pyrotechnic events aboard the space shuttle. The testing device minimizes contact resistance degradation effects and so improves the reliability of resistance measurements taken with the device. Separate and independent voltage sensing and current supply circuits each include a pair of socket contacts for mating engagement with the pins of the initiator. The unknown resistance that is measured by the device is the resistance of the bridgewire of the initiator which is required to be between 0.95 and 1.15 ohms.

Robinson, Robert L.↗
NASA NTRS1986

Theoretical and material studies on thin-film electroluminescent devices

A highly efficient DC electroluminescent display is presented. A variably spaced superlattice structure is used to produce high energy injection of electrons into a ZnSe:Mn active layer in which impact excitation of the Mn centers can occur. The device is predicted to operate at an applied external bias on order of magnitude less than the best DC electroluminescent device to date. The device is predicted to have comparable brightness, since it operates in the saturation regime. The improved efficiency stems from avoiding significant energy loss to phonons. The electrons sequentially tunnel through a multilayer ZnSe/CaSrF2 stack under bias and emerge into the active layer at an energy equal to the conduction band bending. The injection energy is chosen to coincide with the impact excitation energy of the Mn centers. Different device designs are presented and their performance is predicted.

Summers, C. J.↗
NASA NTRS1987

Processes in construction of failure management expert systems from device design information

This paper analyzes the tasks and problem solving methods used by an engineer in constructing a failure management expert system from design information about the device to te diagnosed. An expert test engineer developed a trouble-shooting expert system based on device design information and experience with similar devices, rather than on specific expert knowledge gained from operating the device or troubleshooting its failures. The construction of the expert system was intensively observed and analyzed. This paper characterizes the knowledge, tasks, methods, and design decisions involved in constructing this type of expert system, and makes recommendations concerning tools for aiding and automating construction of such systems.

Malin, Jane T.↗
NASA NTRS1988

Microwave and millimeter-wave resonant-tunneling devices

Resonant-tunneling devices in microelectronic component form, whose structure is the electron analog of a Fabry-Perot resonator, encompass oscillators, self-oscillating mixers, and harmonic multipliers. The negative differential resistance characteristic of these devices has been obtained at room temperature, and resonant-tunneling transistors capable of operation in the THz-frequency range appear to be feasible. Three-terminal resonant-tunneling device development is in its infancy, as is that of devices for digital applications.

Sollner, T. C. L. Gerhard↗
NASA NTRS1989

Impact of device level faults in a digital avionic processor

This study describes an experimental analysis of the impact of gate and device-level faults in the processor of a Bendix BDX-930 flight control system. Via mixed mode simulation, faults were injected at the gate (stuck-at) and at the transistor levels and, their propagation through the chip to the output pins was measured. The results show that there is little correspondence between a stuck-at and a device-level fault model, as far as error activity or detection within a functional unit is concerned. In so far as error activity outside the injected unit and at the output pins are concerned, the stuck-at and device models track each other. The stuck-at model, however, overestimates, by over 100 percent, the probability of fault propagation to the output pins. An evaluation of the Mean Error Durations and the Mean Time Between Errors at the output pins shows that the stuck-at model significantly underestimates (by 62 percent) the impact of an internal chip fault on the output pins. Finally, the study also quantifies the impact of device fault by location, both internally and at the output pins.

Suk, Ho Kim↗
NASA NTRS1988

Computational and experimental studies of LEBUs at high device Reynolds numbers

The present paper summarizes computational and experimental studies for large-eddy breakup devices (LEBUs). LEBU optimization (using a computational approach considering compressibility, Reynolds number, and the unsteadiness of the flow) and experiments with LEBUs at high Reynolds numbers in flight are discussed. The measurements include streamwise as well as spanwise distributions of local skin friction. The unsteady flows around the LEBU devices and far downstream are characterized by strain-gage measurements on the devices and hot-wire readings downstream. Computations are made with available time-averaged and quasi-stationary techniques to find suitable device profiles with minimum drag.

Bertelrud, Arild↗
NASA NTRS1988

Integrated fountain effect pump device for fluid management at low gravity

A new device for fluid management at low gravity is described. The system is basically the same as the enclosed capillary device using screens, in which the screens along the gallery channels are replaced by porous plugs which are responsible for both the fluid retention and pumping of He II; in this device, no downstream pump is needed. The plugs in contact with liquid He on both sides act as a fountain-effect pumps (FEPs), while plugs exposed to vapor on one side behave as vapor-liquid phase separators (VLPSs). The total net rate of He II transfer into the receiving tank equals the mass flow rate through the FEP plugs minus the liquid loss from the VLPS plugs. The results of the performance analysis of this integrated FEP device are presented together with its schematic diagram.

Yuan, S. W. K.↗
NASA NTRS1988

Enclosed capillary device for low gravity management of He II

To transfer He II in space, a large tank must be drained at low gravity. This paper describes and analyzes an enclosed gallery device designed for collecting and delivering He II to a pump. The device allows most of the liquid to move about in the tank while it maintains a liquid flow to the pump. Only the liquid in the screen-covered gallery channels and in the upper and lower receivers is contained. The device operates by providing surface tension dominated liquid paths from all locations within the tank to the lower receiver, which houses the pump. Since the fluid pressure in the channels may be below the saturated vapor pressure, an analysis of He II cavitation is performed to determine if cavitation will occur. The effect of heat dissipation from the pump is examined to determine if it may result in nucleation of boiling. It is concluded that this enclosed device can meet the requirements for transfer of He II under the predicted adverse accelerations that will be encountered on-orbit.

Frank, D. J.↗
NASA NTRS1989

Theoretical and material studies of thin-film electroluminescent devices

Thin-film electroluminescent (TFEL) devices are studied for a possible means of achieving a high resolution, light weight, compact video display panel for computer terminals or television screens. The performance of TFEL devices depends upon the probability of an electron impact exciting a luminescent center which in turn depends upon the density of centers present in the semiconductor layer, the possibility of an electron achieving the impact excitation threshold energy, and the collision cross section itself. Efficiency of such a device is presently very poor. It can best be improved by increasing the number of hot electrons capable of impact exciting a center. Hot electron distributions and a method for increasing the efficiency and brightness of TFEL devices (with the additional advantage of low voltage direct current operation) are investigated.

Summers, C. J.↗
NASA NTRS1991

Radiation sensitive area detection device and method

A radiation sensitive area detection device for use in conjunction with an X ray, ultraviolet or other radiation source is provided which comprises a phosphor containing film which releases a stored diffraction pattern image in response to incoming light or other electromagnetic wave. A light source such as a helium-neon laser, an optical fiber capable of directing light from the laser source onto the phosphor film and also capable of channelling the fluoresced light from the phosphor film to an integrating sphere which directs the light to a signal processing means including a light receiving means such as a photomultiplier tube. The signal processing means allows translation of the fluoresced light in order to detect the original pattern caused by the diffraction of the radiation by the original sample. The optical fiber is retained directly in front of the phosphor screen by a thin metal holder which moves up and down across the phosphor screen and which features a replaceable pinhole which allows easy adjustment of the resolution of the light projected onto the phosphor film. The device produces near real time images with high spatial resolution and without the distortion that accompanies prior art devices employing photomultiplier tubes. A method is also provided for carrying out radiation area detection using the device of the invention.

Carter, Daniel C.↗
NASA NTRS1991

Tunnel transit-time (TUNNETT) devices for terahertz sources

The potential and capabilities of tunnel transit-time (TUNNETT) devices for power generation in the 100-1000 GHz range are presented. The basic properties of these devices and the important material parameters which determine their properties are discussed and criteria for designing such devices are presented. It is shown from a first-order model that significant amounts of power can be obtained from these devices in the terahertz frequency range.

Haddad, G. I.↗
NASA NTRS1991

All a-axis oriented YBa2Cu3O(7-y) - PrBa2Cu3O(7-z) - YBa2Cu3O(7-y) Josephson devices operating at 80 K

The controllable, reproducible fabrication of nonhysteretic Josephson devices with excess-current weak-link characteristics at temperatures up to 80 K have been demonstrated. The devices are patterned from in situ deposited a-axis oriented YBa2Cu3O(7-y) - PrBa2Cu3O(7-y) - YBa2Cu3O(7-y) trilayers grown on SrTiO3(001) substrates. Control of the critical current density and resistance is achieved by varying the thickness of the PrBa2Cu3O(7-z) barrier layer. Critical current densities in excess of 10,000 A/sq cm have been reproducibly measured; good uniformity across the wafer is obtained with device parameters scaling with device area. Strong constant-voltage current steps are observed under 11.2 GHz microwave radiation at temperatures up to and above 80 K.

Barner, J. B.↗
NASA NTRS1992

An overview of silicon carbide device technology

Recent progress in the development of silicon carbide (SiC) as a semiconductor is briefly reviewed. This material shows great promise towards providing electronic devices that can operate under the high-temperature, high-radiation, and/or high-power conditions where current semiconductor technologies fail. High quality single crystal wafers have become available, and techniques for growing high quality epilayers have been refined to the point where experimental SiC devices and circuits can be developed. The prototype diodes and transistors that have been produced to date show encouraging characteristics, but by the same token they also exhibit some device-related problems that are not unlike those faced in the early days of silicon technology development. Although these problems will not prevent the implementation of some useful circuits, the performance and operating regime of SiC electronics will be limited until these device-related issues are solved.

Neudeck, Philip G.↗