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At least 577 records · Page 32

Hydrogenation and surface density changes in hydrocarbon films during erosion using Ar/H{sub 2} plasmas

We report interactions of low pressure Ar, H{sub 2}, and Ar/H{sub 2} mixture plasmas with a-C:H films. Surface evolution and erosion of a-C:H films were examined for ion energies up to 200 eV by rf biasing the substrates. Film surfaces were characterized using in situ ellipsometry, x-ray photoelectron spectroscopy, and atomic force microscopy. Multilayer models for steady-state modified surface layers are constructed using ellipsometric data and compared with results of molecular dynamics (MD) simulations and transport of ions in matter (TRIM) calculations. We find that Ar plasma causes a modified layer at the surface that is depleted of H atoms. The depth and degree of this modification is strongly depending on Ar ion energies. This depletion saturates quickly during plasma exposure (<1 s) and persists during steady-state erosion. We find that the thickness and density of the H-depleted layer are in good agreement with MD and TRIM simulations. The degree of surface densification decreases when small amounts of H{sub 2} are added to Ar plasmas. When more than 5% H{sub 2} is added to the plasma, long term loss in surface density is observed, indicating rehydrogenation and saturation of H in the film. As the H{sub 2} fraction increases, the near-surface atomic H increases and the ion composition bombarding the surface changes. This causes incorporation of H deeper into the a-C:H film. For a-C:H films exposed to pure H{sub 2} plasmas, H is introduced into the near-surface region to a depth of up to {approx}8 nm from the surface. As the rf bias is increased the ion energy transitions from solely chemical sputtering to one involving physical sputtering, causing the yield of C atoms from the surface to greatly increase. The increasing yield suppresses H incorporation/saturation and decreases the magnitude of the modified surface layer.

36 MATERIALS SCIENCE↗

Tunning of microstructure and thermoelectric properties of Ca{sub 3}Co{sub 4}O{sub 9} ceramics by high-magnetic-field sintering

The structural, magnetic, electrical, and thermal transport properties of Ca{sub 3}Co{sub 4}O{sub 9} ceramics sintered under high magnetic field were investigated. Crystal grain texturing and densification were achieved through cold-pressing and high-magnetic-field sintering techniques. The c-axis of the layered crystal grain was partly oriented along the c-axis of the pressed samples via a cold-pressing technique, and the degree of orientation was further increased while applying the magnetic field in the sample sintering progress. The easy magnetization axis of Ca{sub 3}Co{sub 4}O{sub 9} polycrystalline ceramics was found to be the c-axis. The room-temperature resistivity along the ab-plane of the sample sintered under 8 T magnetic field was about 30% smaller than that of the sample sintered without magnetic field, and the Seebeck coefficient of the former reached 177.7 {mu}V/K at the room temperature, which is about 50% larger than that of the latter. Consequently, for the sample sintered at 8 T magnetic field, the power factor along the ab-plane was enhanced by about 1.8 times compared to the sample without magnetic field sintering. The obtained result is suggested to originate from the variations of the carrier mobility and spin-orbital degeneracy due to high-magnetic-field sintering in the progress of the sample preparation.

36 MATERIALS SCIENCE↗

Pressure effects on phase equilibria and solid solubility in MgO-Y2O3 nanocomposites

We study the temperature and pressure dependence of phase evolution in the 0.5MgO-0.5Y{sub 2}O{sub 3} nanocomposite system using a diamond anvil apparatus in conjunction with in situ synchrotron energy dispersive x-ray diffraction at 7 GPa hydrostatic pressure. At (298 K, 7.0 GPa), structural transformations in the Y{sub 2}O{sub 3} phase are observed, giving rise to the co-existence of its cubic, hexagonal, and monoclinic polymorphs together with cubic MgO. An increase in temperature to 1273 K causes the crystallinity of the Y{sub 2}O{sub 3} hexagonal and monoclinic phases to increase. Isothermal and isobaric hold at (1273 K, 7.0 GPa) for 60 min results in yttrium dissolution in cubic MgO, causing {approx}1.0% expansive volumetric lattice strain despite the large differences in the ionic radii of the cations. Cooling the nanocomposite to (298 K, 0 GPa) after a 60 min soak yields four phase co-existence among cubic MgO and cubic, hexagonal, and monoclinic Y{sub 2}O{sub 3}. The residual MgO unit cell volume expansion is 0.69% at 298 K, indicating solid solution formation at room temperature despite large differences in the ionic radii of Mg{sup 2+} and Y{sup 3+}. The macroscopic shrinkage due to densification is 3% by volume. Thermodynamic considerations suggest that the relative molar partial volume of Y{sup 3+} in MgO is a negative quantity, indicating that the partial molar volume of Y{sup 3+} in the solid solution is smaller than its molar volume in the pure state. Aging of the nanocomposites for 240 h does not change the observed 4 phase co-existence. We propose a crystallographic model in which the observed volumetric expansion of the MgO unit cell is primarily attributed to two hydrostatic expansive strain components accompanying solid solution formation: (i) Coulomb repulsion among O{sup 2-} ions in the immediate vicinity of Mg{sup 2+} vacancies, and (ii) misfit strain due to differences in ionic radii upon Y{sup 3+} substitution on Mg{sup 2+} sites.

36 MATERIALS SCIENCE↗

Structural relaxation in amorphous oxide semiconductor, a-In-Ga-Zn-O

Amorphous In-Ga-Zn-O (a-IGZO) is expected as a backplane transistor material to drive next-generation flat-panel and flexible displays. It has been elucidated that thermal annealing even at low temperatures <200 deg. C reduces deep subgap defects and those at {>=}300 deg. C further improve device characteristics, stability, and uniformity. These temperatures are much lower than the reported crystallization temperature (T{sub X}{approx} 600 deg. C). In this work, we investigate effects of thermal annealing on the structural and optical properties of a-IGZO thin films. We performed classical molecular dynamics simulation (CMD) and optical interference analyses including spectroscopic ellipsometry (SE). CMD reproduced the x-ray diffraction pattern of a-IGZO and exhibited a glass transition. Experimentally, it was found that T{sub X} depends largely on deposition methods and conditions, probably due to different chemical compositions. Sputter-deposited a-IGZO films exhibited onset T{sub X}{approx} 600 deg. C and crystalline volume fraction X{sub C} increased linearly from 600 deg. C. 1.2% of film densification occurred even at 600 deg. C due to crystallization. High-temperature in situ SE measurements did not detect a symptom of a glass transition temperature (T{sub g}) presumably because the T{sub X} is close to T{sub g} similar to the case of amorphous metals.

36 MATERIALS SCIENCE↗

Seeded optical breakdown of molecular and noble gases

We report experimental results on the dual laser-pulse plasma excitation in various gases at atmospheric pressure. Dilute plasma channels generated through filamentation of ultraintense femtosecond laser pulses in air, argon, and helium are densified through the application of multi-Joule nanosecond heater pulses. Optical breakdown in atomic gases can be achieved for considerably longer delays between femtosecond and nanosecond pulses compared to that in molecular gases. The densification of the seed channel in molecular gases is always accompanied by its fragmentation into discrete bubbles, while in atomic gases the densified channel remains smooth and continuous.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Tailoring properties of carbon-nanotube-based foams by ion bombardment

Particle irradiation is an effective method for manipulating properties of individual carbon nanotubes (CNTs). This potential, however, remains unexplored for macroscopic assemblies of cross-linked CNTs. Here, we study structural and electrical properties of ultralow-density cross-linked CNT-based nanofoams exposed to ion irradiation at room temperature over a wide range of ion masses and fluences. For all irradiation conditions studied, the electrical resistance of nanofoams initially increases with a rate that scales with the number of ballistically generated displacements. This process is attributed to the buildup of defects in graphitic nanoligaments. Irradiation with Ne and heavier ions leads to a decrease in the electrical resistance at large fluences, which is attributed to radiation-induced foam densification. In addition, heavy-ion bombardment causes amorphization of CNTs and smoothing of ligament surfaces. These results demonstrate that ion bombardment can be used for tailoring density, ligament morphology, and electrical properties of CNT-based foams.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Visible photoluminescence in polycrystalline terbium doped aluminum nitride (Tb:AlN) ceramics with high thermal conductivity

Thermal management continues to be one of the major challenges in the development of high powered light sources such as solid state lasers. In particular, the relatively low thermal conductivity of standard photoluminescent (PL) materials limits the overall power output and/or duty cycle. We present a method based on current activated pressure assisted densification for the fabrication of high thermal conductivity PL materials: rare earth doped polycrystalline bulk aluminum nitride. Specifically, the ceramics are translucent and are doped with Tb{sup 3+}, allowing for emission in the visible. Remarkably, the ceramics have a room temperature thermal conductivity of 94 W/(m K) which is almost seven times higher than that of the state of the art host material, Nd-doped yttrium aluminum garnet. These light emitting properties coupled with very high thermal conductivity should enable the development of a wide variety of more powerful light sources.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

The study of dielectric, pyroelectric and piezoelectric properties on hot pressed PZT-PMN systems

Hot uniaxial pressing technique has been adopted for the densification of PZT-PMN system with an aim to yield dense ceramics and to lower the sintering temperature and time for achieving better and reproducible electronic properties. The ceramics having >97% theoretical density and micron size grains are investigated for their dielectric, pyroelectric and piezoelectric properties. The effect of Li and Mn addition has also been studied.

36 MATERIALS SCIENCE↗

Ferroelectric and dielectric properties of ferrite-ferroelectric ceramic composites

Particulate composites of ferrite and ferroelectric phases with xNiFe{sub 2}O{sub 4} (NF) and (1 - x)Pb{sub 0.988}(Zr{sub 0.52}Ti{sub 0.48}){sub 0.976}Nb{sub 0.024}O{sub 3} (where x = 2, 10, 20, 30, 50, 70, and 100 wt. %) were prepared in situ by sol-gel method. The presence of a diphase composition was confirmed by X-ray diffraction while the microstructure of the composites was studied by scanning electron microscopy revealing a good mixing of the two phases and a good densification of the bulk ceramics. The dielectric permittivity shows usual dielectric dispersion behavior with increasing frequency due to Maxwell-Wagner interfacial polarization. AC conductivity measurements made in frequency range 1 Hz-1 MHz suggest that the conduction process is due to mixed polaron hopping. The effect of NF phase concentration on the P-E and M-H hysteresis behavior and dielectric properties of the composites was investigated. At low NF concentration a sharp ferro-paraelectric transition peak can be observed at around 360 Degree-Sign C while for higher NF concentrations a trend to a diffuse phase transition occurs. All the composite samples exhibit typical ferromagnetic hysteresis loops, indicating the presence of ordered magnetic structure.

36 MATERIALS SCIENCE↗

Interlayer growth in Mo/B{sub 4}C multilayered structures upon thermal annealing

Both multilayer period thickness expansion and compaction were observed in Mo/B{sub 4}C multilayers upon annealing, and the physical causes for this were explored in detail. Using in situ time-dependent grazing incidence X-ray reflectometry, period changes down to picometer-scale were resolved. It was shown that the changes depend on the thickness of the B{sub 4}C layers, annealing temperature, and annealing time. Although strong stress relaxation during annealing was observed, it was excluded as a cause for period expansion. Auger electron spectroscopy and wide angle X-ray diffraction measurements revealed the growth of interlayers, with associated period changes influenced by the supply of B and C atoms to the growing compound interlayers. For multilayers with a Mo thickness of 3 nm, two regimes were recognized, depending on the deposited B{sub 4}C thickness: in multilayers with B{sub 4}C {<=} 1.5 nm, the supply of additional Mo into the already formed MoB{sub x}C{sub y} interlayer was dominant and led to densification, resulting in period compaction. For multilayers with B{sub 4}C {>=} 2 nm, the B and C enrichment of interlayers formed low density compounds and yielded period expansion.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DEM simulation of experimental dense granular packing

In this study we present numerical analysis performed on the experimental results of sphere packings of mono-sized hard sphere whose packing fraction spans across a wide range of 0.59<{Phi}<0.72. Using X-ray Computed Tomography (XCT), we have full access to the 3D structure of the granular packings. Numerical analysis performed on thr data provides the first experimental proofs of how densification affects local order parameters. Furthermore by combining Discrete Element Method (DEM) and the experimental results from XCT, we investigate how the intergranular forces change with the onset of crystallization.

36 MATERIALS SCIENCE↗

Ultra low-K shrinkage behavior when under electron beam in a scanning electron microscope

In this paper, we investigate the tendency of porous low-K dielectrics (also named Ultra Low-K, ULK) behavior to shrink when exposed to the electron beam of a scanning electron microscope. Various experimental electron beam conditions have been used for irradiating ULK thin films, and the resulting shrinkage has been measured through use of an atomic force microscope tool. We report the shrinkage to be a fast, cumulative, and dose dependent effect. Correlation of the shrinkage with incident electron beam energy loss has also been evidenced. The chemical modification of the ULK films within the interaction volume has been demonstrated, with a densification of the layer and a loss of carbon and hydrogen elements being observed.

36 MATERIALS SCIENCE↗

Pressure-induced pseudoatom bonding collapse and isosymmetric phase transition in Zr{sub 2}Cu: First-principles predictions

The structural evolution of tetragonal Zr{sub 2}Cu has been investigated under high pressures up to 70 GPa by means of density functional theory. Our calculations predict a pressure-induced isosymmetric transition where the tetragonal symmetry (I4/mmm) is retained during the entire compression as well as decompression process while its axial ratio (c/a) undergoes a transition from ∼3.5 to ∼4.2 at around 35 GPa with a hysteresis width of about 4 GPa accompanied by an obvious volume collapse of 1.8% and anomalous elastic properties such as weak mechanical stability, dramatically high elastic anisotropy, and low Young's modulus. Crystallographically, the tetragonal axial ratio shift renders this transition analogous to a simple bcc-to-fcc structural transition, which implies it might be densification-driven. Electronically, the ambient Zr{sub 2}Cu is uncovered with an intriguing pseudo BaFe{sub 2}As{sub 2}-type structure, which upon the phase transition undergoes an electron density topological change and collapses to an atomic-sandwich-like structure. The pseudo BaFe{sub 2}As{sub 2}-type structure is demonstrated to be shaped by hybridized dxz + yz electronic states below Fermi level, while the high pressure straight Zr-Zr bonding is accommodated by electronic states near Fermi level with dx{sup 2} − y{sup 2} dominant features.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Integrated heat exchanger design for a cryogenic storage tank

Field demonstrations of liquid hydrogen technology will be undertaken for the proliferation of advanced methods and applications in the use of cryofuels. Advancements in the use of cryofuels for transportation on Earth, from Earth, or in space are envisioned for automobiles, aircraft, rockets, and spacecraft. These advancements rely on practical ways of storage, transfer, and handling of liquid hydrogen. Focusing on storage, an integrated heat exchanger system has been designed for incorporation with an existing storage tank and a reverse Brayton cycle helium refrigerator of capacity 850 watts at 20 K. The storage tank is a 125,000-liter capacity horizontal cylindrical tank, with vacuum jacket and multilayer insulation, and a small 0.6-meter diameter manway opening. Addressed are the specific design challenges associated with the small opening, complete modularity, pressure systems re-certification for lower temperature and pressure service associated with hydrogen densification, and a large 8:1 length-to-diameter ratio for distribution of the cryogenic refrigeration. The approach, problem solving, and system design and analysis for integrated heat exchanger are detailed and discussed. Implications for future space launch facilities are also identified. The objective of the field demonstration will be to test various zero-loss and densified cryofuel handling concepts for future transportation applications.

42 ENGINEERING↗

Diffusion of In{sub 0.53}Ga{sub 0.47}As elements through hafnium oxide during post deposition annealing

Diffusion of indium through HfO{sub 2} after post deposition annealing in N{sub 2} or forming gas environments is observed in HfO{sub 2}/In{sub 0.53}Ga{sub 0.47}As stacks by low energy ion scattering and X-ray photo electron spectroscopy and found to be consistent with changes in interface layer thickness observed by transmission electron microscopy. Prior to post processing, arsenic oxide is detected at the surface of atomic layer deposition-grown HfO{sub 2} and is desorbed upon annealing at 350 °C. Reduction of the interfacial layer thickness and potential densification of HfO{sub 2}, resulting from indium diffusion upon annealing, is confirmed by an increase in capacitance.

36 MATERIALS SCIENCE↗

Single-shot high aspect ratio bulk nanostructuring of fused silica using chirp-controlled ultrafast laser Bessel beams

We report single-shot, high aspect ratio nanovoid fabrication in bulk fused silica using zeroth order chirp-controlled ultrafast laser Bessel beams. We identify a unique laser pulse length and energy dependence of the physical characteristics of machined structures over which nanovoids of diameter in the range 200–400 nm and aspect ratios exceeding 1000 can be fabricated. A mechanism based on the axial energy deposition of nonlinear ultrashort Bessel beams and subsequent material densification or rarefaction in fused silica is proposed, intricating the non-diffractive nature with the diffusing character of laser-generated free carriers. Fluid flow through nanochannel is also demonstrated.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Coordination-resolved local bond contraction and electron binding-energy entrapment of Si atomic clusters and solid skins

Consistency between x-ray photoelectron spectroscopy measurements and density-function theory calculations confirms our bond order-length-strength notation-incorporated tight-binding theory predictions on the quantum entrapment of Si solid skin and atomic clusters. It has been revealed that bond-order deficiency shortens and strengthens the Si-Si bond, which results in the local densification and quantum entrapment of the core and valence electrons. Unifying Si clusters and Si(001) and (111) skins, this mechanism has led to quantification of the 2p binding energy of 96.089 eV for an isolated Si atom, and their bulk shifts of 2.461 eV. Findings evidence the significance of atomic undercoordination that is of great importance to device performance.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Thermoelectric properties of indium doped PbTe{sub 1-y}Se{sub y} alloys

Lead telluride and its alloys are well known for their thermoelectric applications. Here, a systematic study of PbTe{sub 1-y}Se{sub y} alloys doped with indium has been done. The powder X-Ray diffraction combined with Rietveld analysis confirmed the polycrystalline single phase nature of the samples, while microstructural analysis with scanning electron microscope results showed densification of samples and presence of micrometer sized particles. The temperature dependent transport properties showed that in these alloys, indium neither pinned the Fermi level as it does in PbTe, nor acted as a resonant dopant as in SnTe. At high temperatures, bipolar effect was observed which restricted the zT to 0.66 at 800 K for the sample with 30% Se content.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗