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At least 577 records · Page 32

Crystal Structure and Magnetic Properties of the Breathing Kagome Ising Antiferromagnet Yb 3 Ni 11 Ge 4.63

We have investigated magnetic properties of the rare-earth based intermetallic compound Yb 3 Ni 11 Ge 4.63 (YNG), where Yb 3+ ions form a breathing-kagome lattice. Single-site 4f electron wavefunctions of the ground-state doublet are deduced from magnetization and heat capacity measurements. The Weiss temperatures are quite anisotropic as Θ a = -0.01(2) K (H ∥ a) and Θ c = -0.67(2) K (H ∥ c), indicating Ising-like spin–spin interactions dominating in this compound. Low-temperature neutron diffraction confirms absence of magnetic Bragg peaks down to 0.05 K, whereas enhancement of broad peaks below 0.8 K was observed, a signature of short-range spin correlations. Furthermore, competing interactions on the breathing-kagome lattice would suppress a magnetic long-range order in YNG.

36 MATERIALS SCIENCE↗

Elasticity of some mantle crystals structures. III - Spessartite-almandine garnet

Measurements of the pressure dependence of the elastic constants of spessartite-almandine garnet are given. The basis for velocity systematics among the available natural and synthetic garnet data is then examined. As for any dense oxide, the natural anion in garnet is dominant in size. The ionic sizes of the cations in the various sites are used to determine the extent to which it might be expected that garnets of different chemical formulas are analogous in elastic properties. The results are used to predict that the elastic velocities in garnet-transformed MgSiO3 are the same as those in pyrope (Mg3Al2Si3O12).

Wang, H.↗

Polymorphism and the crystal structures of InSb at elevated temperature and pressure

The paper presents polycrystalline X-ray diffraction data for three high-pressure phases of InSb. The study employed two types of diamond-anvil pressure cells. The X-ray diffraction parameters were recorded at different fixed pressures and temperatures on flat film. The experiment utilized Zr-filtered Mo radiation. The intensities were estimated from the X-ray photographs using a semiautomated microdensitometer.

Yu, S.-C.↗

Harmonic and Anharmonic Properties of Diamond Structure Crystals with Application to the Calculation of the Thermal Expansion of Silicon

Silicon has interesting harmonic and anharmonic properties such as the low lying transverse acoustic modes at the X and L points of the Brillouin zone, negative Gruneisen parameters, negative thermal expansion and anomalous acoustic attenuation. In an attempt to understand these properties, a lattice dynamical model employing long range, nonlocal, dipole-dipole interactions was developed. Analytic expression for the Gruneisen parameters of several modes are presented. These expressions explain how the negative Gruneisen parameters arise. This model is applied to the calculation of the thermal expansion of silicon from 5K to 1700K. The thermoelastic contribution to the acoustic attenuation of silicon is computed from 1 to 300 K. Strong attenuation anomalies associated with negative thermal expansion are found in the vicinity of 17K and 125K.

Wanser, K. H.↗

Effect of particle size and particle size distribution on physical characteristics, morphology and crystal structure of explosively compacted high-T(sub c) superconductors

A superconductor, of composition Y(Ba,K,Na)2Cu3O(x)/F(y) and a composite of composition Y(Ba,K,Na)2Cu3O(x)/F(y) + Ag, with changing K, Na and F content but a constant silver content (Ag = 10 mass%) was prepared using a single heat treatment. the resulting material was ground in a corundum lined mill, separated to particle size fractions of 0-40 micron, 0-63 micron and 63-900 micron and explosively compacted, using an explosive pressure of 10(exp 4) MPa and a subsequent heat treatment. Best results were obtained with the 63-900 micron fraction of composition Y(Ba(1.95) K(0.01)Cu3O(x)F(0),(05)/Ag: porosity less than 0.01 cu cm/g and current density 2800 A/sq cm at 77K.

Kotsis, I.↗

Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices (Invited)

As illustrated by the invited paper at this conference and other works, SiC wafers and epilayers contain a variety of crystallographic imperfections, including micropipes, closed-core screw dislocations, grain boundaries, basal plane dislocations, heteropolytypic inclusions, and surfaces that are often damaged and contain atomically rough features like step bunching and growth pits or hillocks. Present understanding of the operational impact of various crystal imperfections on SiC electrical devices is reviewed, with an emphasis placed on high-field SiC power devices and circuits.

Neudeck, Philip G.↗

Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices

Commercial epilayers are known to contain a variety of crystallographic imperfections. including micropipes, closed core screw dislocations. low-angle boundaries, basal plane dislocations, heteropolytypic inclusions, and non-ideal surface features like step bunching and pits. This paper reviews the limited present understanding of the operational impact of various crystal defects on SiC electrical devices. Aside from micropipes and triangular inclusions whose densities have been shrinking towards manageably small values in recent years, many of these defects appear to have little adverse operational and/or yield impact on SiC-based sensors, high-frequency RF, and signal conditioning electronics. However high-power switching devices used in power management and distribution circuits have historically (in silicon experience) demanded the highest material quality for prolonged safe operation, and are thus more susceptible to operational reliability problems that arise from electrical property nonuniformities likely to occur at extended crystal defects. A particular emphasis is placed on the impact of closed-core screw dislocations on high-power switching devices, because these difficult to observe defects are present in densities of thousands per cm,in commercial SiC epilayers. and their reduction to acceptable levels seems the most problematic at the present time.

Neudeck, Philip G.↗

Crystal structure of an Okazaki fragment at 2-A resolution

In DNA replication, Okazaki fragments are formed as double-stranded intermediates during synthesis of the lagging strand. They are composed of the growing DNA strand primed by RNA and the template strand. The DNA oligonucleotide d(GGGTATACGC) and the chimeric RNA-DNA oligonucleotide r(GCG)d(TATACCC) were combined to form a synthetic Okazaki fragment and its three-dimensional structure was determined by x-ray crystallography. The fragment adopts an overall A-type conformation with 11 residues per turn. Although the base-pair geometry, particularly in the central TATA part, is distorted, there is no evidence for a transition from the A- to the B-type conformation at the junction between RNA.DNA hybrid and DNA duplex. The RNA trimer may, therefore, lock the complete fragment in an A-type conformation.

Non-NASA Center↗