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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 577 records · Page 32
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Low-threshold laser medium utilizing semiconductor nanoshell quantum dots

Colloidal semiconductor nanocrystals (NCs) represent a promising class of nanomaterials for lasing applications. Currently, one of the key challenges facing the development of high-performance NC optical gain media lies in enhancing the lifetime of biexciton populations. This usually requires the employment of charge-delocalizing particle architectures, such as core/shell NCs, nanorods, and nanoplatelets. Here, we report on a two-dimensional nanoshell quantum dot (QD) morphology that enables a strong delocalization of photoinduced charges, leading to enhanced biexciton lifetimes and low lasing thresholds. A unique combination of a large exciton volume and a smoothed potential gradient across interfaces of the reported CdS bulk /CdSe/CdS shell (core/shell/shell) nanoshell QDs results in strong suppression of Auger processes, which was manifested in this work though the observation of stable amplified stimulated emission (ASE) at low pump fluences. An extensive charge delocalization in nanoshell QDs was confirmed by transient absorption measurements, showing that the presence of a bulk-size core in CdS bulk /CdSe/CdS shell QDs reduces exciton–exciton interactions. Altogether, present findings demonstrate unique advantages of the nanoshell QD architecture as a promising optical gain medium in solid-state lighting and lasing applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

CdS/PbSe heterojunction for high temperature mid-infrared photovoltaic detector applications

n-CdS/p-PbSe heterojunction is investigated. A thin CdS film is deposited by chemical bath deposition on top of epitaxial PbSe film by molecular beam epitaxy on Silicon. Current-voltage measurements demonstrate very good junction characteristics with rectifying ratio of ∼178 and ideality factor of 1.79 at 300 K. Detectors made with such structure exhibit mid-infrared spectral photoresponse at room temperature. The peak responsivity R{sub λ} and specific detectivity D{sup *} are 0.055 A/W and 5.482 × 10{sup 8} cm·Hz{sup 1/2}/W at λ = 4.7 μm under zero-bias photovoltaic mode. Temperature-dependent photoresponse measurements show abnormal intensity variation below ∼200 K. Possible reasons for this phenomenon are also discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Fluorescence relaxation dynamics of CdSe and CdSe/CdS core/shell quantum dots

Time-resolved fluorescence spectra for colloidal CdSe and CdSe/CdS core/shell quantum dots have been investigated to know their electron relaxation dynamics at the maximum steady state fluorescence intensity. CdSe core and CdSe/CdS type I core-shell materials with different shell (CdS) thicknesses have been synthesized using mercaptoacetic acid as a capping agent. Steady state absorption and emission studies confirmed successful synthesis of CdSe and CdSe/CdS core-shell quantum dots. The fluorescence shows a tri-exponential decay with lifetimes 57.39, 7.82 and 0.96 ns for CdSe quantum dots. The lifetime of each recombination decreased with growth of CdS shell over the CdSe core, with maximum contribution to fluorescence by the fastest transition.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

First principle study of manganese doped cadmium sulphide sheet

First-principle electronic structure calculations for cadmium sulphide (CdS) sheet in hexagonal phase, with Manganese substitution and addition, as well as including the Cd defects, are investigated. The lattice constants calculated for CdS sheet agrees fairly well with results reported for thin films experimentally. The calculations of total spin density of states and partial density of states in different cases shows substantial magnetic dipole moments acquired by the sheet. A magnetic dipole moment 5.00612 μ{sub B} and band gap of the order 1 eV are found when cadmium atom is replaced by Manganese. The magnetism acquired by the sheet makes it functionally important candidate in many applications.

36 MATERIALS SCIENCE↗
DOE OSTI2015

A study of polaritonic transparency in couplers made from excitonic materials

We have studied light matter interaction in quantum dot and exciton-polaritonic coupler hybrid systems. The coupler is made by embedding two slabs of an excitonic material (CdS) into a host excitonic material (ZnO). An ensemble of non-interacting quantum dots is doped in the coupler. The bound exciton polariton states are calculated in the coupler using the transfer matrix method in the presence of the coupling between the external light (photons) and excitons. These bound exciton-polaritons interact with the excitons present in the quantum dots and the coupler is acting as a reservoir. The Schrödinger equation method has been used to calculate the absorption coefficient in quantum dots. It is found that when the distance between two slabs (CdS) is greater than decay length of evanescent waves the absorption spectrum has two peaks and one minimum. The minimum corresponds to a transparent state in the system. However, when the distance between the slabs is smaller than the decay length of evanescent waves, the absorption spectra has three peaks and two transparent states. In other words, one transparent state can be switched to two transparent states when the distance between the two layers is modified. This could be achieved by applying stress and strain fields. It is also found that transparent states can be switched on and off by applying an external control laser field.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Investigation of photoresponse in cadmium sulfide nanoparticles

In this work, we report on the photo-response of CdS nanoparticles prepared by simple solid state reaction method. The X-ray diffraction (XRD) study has confirmed the formation of cubical zinc blende (c) phase. In the photo-response study, voltage dependence of photocurrent and darkcurrent as well as temporal rise and decay of photocurrent of CdS nanoparticles have been investigated. The photo-response of prepared sample has been measured under visible illumination using thick film of powder with out any binder. The photocurrent (I{sub pc}) and darkcurrent (I{sub dc}) follow power law with applied voltage i.e. I α V{sup r}. The rise and decay of photocurrent show negative photoconductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Dip coated nanocrystalline CdZnS thin films for solar cell application

Nanocrystalline cadmium sulfide (CdS) and zinc cadmium sulfide (ZnCdS) thin films have been grown via simple and low cost dip coating technique. The prepared films are characterized by X-ray diffraction (XRD), atomic force microscopic (AFM) and UV-VIS spectrophotometer techniques to reveal their structural, morphological and optical properties. XRD shows that both samples grown have zinc blende structure. The grain size is calculated as 6.2 and 8 nm using Scherrer’s formula. The band gap value of CdS and CdZnS film is estimated to be 2.58 and 2.69 eV respectively by UV-vis spectroscopy. Photoelectrochemical (PEC) investigations are carried out using cell configuration as n-CdZnS/(1M NaOH + 1M Na2S + 1M S)/C. The photovoltaic output characteristic is used to calculate fill-factor (FF) and solar conversion efficiency (η)

14 SOLAR ENERGY↗
DOE OSTI2015

Defect-dependent carrier transport behavior of polymer:ZnO composites/electrodeposited CdS/indium tin oxide devices

Currents through the poly(3,4-ethylenedioxythiophene) doped with poly(styrenesulfonate) and ZnO nanoparticles (PEDOT:PSS:ZnO)/CdS/indium tin oxide (ITO) hetero-structures are studied. The authors introduced the electrodeposition technique with sulfide treatment to improve the film quality of CdS. It is shown that sulfide treatment leads to a reduction in the number of donor-like defects (that is, sulfur vacancies and cadmium interstitials) in the CdS films, which leads to the conversion of carrier transport behavior from Poole-Frenkel emission to thermionic emission-diffusion for PEDOT:PSS:ZnO/CdS/ITO devices. A correlation is identified for providing a guide to control the current transport behavior of PEDOT:PSS:ZnO/CdS/ITO devices.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Effect of thermal annealing on structural and optical properties of In{sub 2}S{sub 3} thin films

There is a highly need of an alternate of toxic materials CdS for solar cell applications and indium sulfide is found the most suitable candidate to replace CdS due to its non-toxic and environmental friendly nature. In this paper, the effect of thermal annealing on the structural and optical properties of indium sulfide (In{sub 2}S{sub 3}) thin films is undertaken. The indium sulfide thin films of 121 nm were deposited on glass substrates employing thermal evaporation method. The films were subjected to the X-ray diffractometer and UV-Vis spectrophotometer respectively for structural and optical analysis. The XRD pattern show that the as-deposited thin film was amorphous in nature and crystallinity is found to be varied with annealing temperature. The optical analysis reveals that the optical band gap is varied with annealing. The optical parameters like absorption coefficient, extinction coefficient and refractive index were calculated. The results are in good agreement with available literature.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Quantum funneling in blended multi-band gap core/shell colloidal quantum dot solar cells

Multi-band gap heterojunction solar cells fabricated from a blend of 1.2 eV and 1.4 eV PbS colloidal quantum dots (CQDs) show poor device performance due to non-radiative recombination. To overcome this, a CdS shell is epitaxially formed around the PbS core using cation exchange. From steady state and transient photoluminescence measurements, we understand the nature of charge transfer between these quantum dots. Photoluminescence decay lifetimes are much longer in the PbS/CdS core/shell blend compared to PbS only, explained by a reduction in non-radiative recombination resulting from CdS surface passivation. PbS/CdS heterojunction devices sustain a higher open-circuit voltage and lower reverse saturation current as compared to PbS-only devices, implying lower recombination rates. Further device performance enhancement is attained by modifying the composition profile of the CQD species in the absorbing layer resulting in a three dimensional quantum cascade structure.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Charge transport mechanism analysis of Al/CdS:Sr{sup 2+}/ITO device under dark and light

In this study, we have synthesized CdS:Sr{sup 2+} by hydrothermal technique. Material property has been studied by X-ray diffraction (XRD), Scanning electron microscope (SEM) and UV-vis absorption spectroscopy. XRD data revealed that there are mixed phases of CdS and SrS in the synthesized sample. The optical band gap of the material was estimated as 3.15 eV from UV-vis data. The synthesized material has been applied in metal-semiconductor device and transport properties have been analyzed by measuring current–voltage characteristics under dark and light conditions at room temperature. Variation in different device parameters like ideality factor, barrier height and series resistance of Al/CdS:Sr{sup 2+}/ITO device were analyzed by using Cheung’s function.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Ethanol gas sensing by Zn-doped CdS/CdTe nanoparticles

Zn-doped CdS/CdTe nanoparticles (NPs) were synthesized and studied here for gas sensing. The crystallographic properties of the samples were studied by X-ray diffraction (XRD), which shows cubic structure for CdS and CdTe NPs. The three longitudinal optical phonon modes at 298, 595 and 895 cm{sup −1} were obtained from Raman spectrum and this also reveals the cubic structure of CdS NPs. The band gap for Zn-doped CdS/CdTe NPs increased slightly when compared with pure sample. The ethanol gas sensing in CdS/CdTe NPs shows an enhancement on Zn substitution.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Band offset at the heterojunction interfaces of CdS/ZnSnP{sub 2}, ZnS/ZnSnP{sub 2}, and In{sub 2}S{sub 3}/ZnSnP{sub 2}

Heterojunctions were formed between ZnSnP{sub 2} and buffer materials, CdS, ZnS, and In{sub 2}S{sub 3}, using chemical bath deposition. The band offset was investigated by X-ray photoelectron spectroscopy based on Kraut method. The conduction band offset, ΔE{sub C}, between ZnSnP{sub 2} and CdS was estimated to be −1.2 eV, which significantly limits the open circuit voltage, V{sub OC}. Conversely, ΔE{sub C} at the heterojunction between ZnSnP{sub 2} and ZnS was +0.3 eV, which is within the optimal offset range. In the case of In{sub 2}S{sub 3}, ΔE{sub C} was a relatively small value, −0.2 eV, and In{sub 2}S{sub 3} is potentially useful as a buffer layer in ZnSnP{sub 2} solar cells. The J−V characteristics of heterojunction diodes with an Al/sulfides/ZnSnP{sub 2} bulk/Mo structure also suggested that ZnS and In{sub 2}S{sub 3} are promising candidates for buffer layers in ZnSnP{sub 2} thin film solar cells, and the band alignment is a key factor for the higher efficiency of solar cells with heterojunctions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

A structure of CdS/Cu{sub x}S quantum dots sensitized solar cells

This work introduces a type of CdS/Cu{sub x}S quantum dots (QDs) as sensitizers in quantum dot sensitized solar cells by in-situ cationic exchange reaction method where CdS photoanode is directly immersed in CuCl{sub 2} methanol solution to replace Cd{sup 2+} by Cu{sup 2+}. The p-type Cu{sub x}S layer on the surface of the CdS QDs can be considered as hole transport material, which not only enhances the light harvesting of photoanode but also boosts the charge separation after photo-excitation. Therefore, both the electron collection efficiency and power conversion efficiency of the solar cell are improved from 80% to 92% and from 1.21% to 2.78%, respectively.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Engineered band structure for an enhanced performance on quantum dot-sensitized solar cells

A photon-to-current efficiency of 2.93% is received for the Mn-doped CdS (MCdS)-quantum dot sensitized solar cells (QDSSCs) using Mn:ZnO (MZnO) nanowire as photoanode. Hydrothermal synthesized MZnO are spin-coated on fluorine doped tin oxide (FTO) glass with P25 paste to serve as photoanode after calcinations. MCdS was deposited on the MZnO film by the successive ionic layer adsorption and reaction method. The long lived excitation energy state of Mn{sup 2+} is located inside the conduction band in the wide bandgap ZnO and under the conduction band of CdS, which increases the energetic overlap of donor and acceptor states, reducing the “loss-in-potential,” inhibiting charge recombination, and accelerating electron injection. The engineered band structure is well reflected by the electrochemical band detected using cyclic voltammetry. Cell performances are evidenced by current density-voltage (J-V) traces, diffuse reflectance spectra, transient PL spectroscopy, and incident photon to current conversion efficiency characterizations. Further coating of CdSe on MZnO/MCdS electrode expands the light absorption band of the sensitizer, an efficiency of 4.94% is received for QDSSCs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

A computational ab initio study of surface diffusion of sulfur on the CdTe (111) surface

In order to discern the formation of epitaxial growth of CdS shell over CdTe nanocrystals, kinetics related to the initial stages of the growth of CdS on CdTe is investigated using ab-initio methods. We report diffusion of sulfur adatom on the CdTe (111) A-type (Cd-terminated) and B-type (Te-terminated) surfaces within the density functional theory (DFT). The barriers are computed by applying the climbing Nudge Elastic Band (c-NEB) method. From the results surface hopping emerges as the major mode of diffusion. In addition, there is a distinct contribution from kick-out type diffusion in which a CdTe surface atom is kicked out from its position and is replaced by the diffusing sulfur atom. Also, surface vacancy substitution contributes to the concomitant dynamics. There are sites on the B- type surface that are competitively close in terms of the binding energy to the lowest energy site of epitaxy on the surface. The kick-out process is more likely for B-type surface where a Te atom of the surface is displaced by a sulfur adatom. Further, on the B-type surface, subsurface migration of sulfur is indicated. Furthermore, the binding energies of S on CdTe reveal that on the A-type surface, epitaxial sites provide relatively higher binding energies and barriers than on B-type.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Nanoshell quantum dots: Quantum confinement beyond the exciton Bohr radius

Nanoshell quantum dots (QDs) represent a novel class of colloidal semiconductor nanocrystals (NCs), which supports tunable optoelectronic properties over the extended range of particle sizes. Traditionally, the ability to control the bandgap of colloidal semiconductor NCs is limited to small-size nanostructures, where photoinduced charges are confined by Coulomb interactions. A notorious drawback of such a restricted size range concerns the fact that assemblies of smaller nanoparticles tend to exhibit a greater density of interfacial and surface defects. This presents a potential problem for device applications of semiconductor NCs where the charge transport across nanoparticle films is important, as in the case of solar cells, field-effect transistors, and photoelectrochemical devices. Furthermore, the morphology of nanoshell QDs addresses this issue by enabling the quantum-confinement in the shell layer, where two-dimensional excitons can exist, regardless of the total particle size. Such a geometry exhibits one of the lowest surface-to-volume ratios among existing QD architectures and, therefore, could potentially lead to improved charge-transport and multi-exciton characteristics. The expected benefits of the nanoshell architecture were recently demonstrated by a number of reports on the CdS bulk /CdSe nanoshell model system, showing an improved photoconductivity of solids and increased lifetime of multi-exciton populations. Along these lines, this perspective will summarize the recent work on CdS bulk /CdSe nanoshell colloids and discuss the possibility of employing other nanoshell semiconductor combinations in light-harvesting and lasing applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗