Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “CAPACITOR”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 577 records · Page 32

Design definition of a mechanical capacitor

A design study and analyses of a 10 kW-hr, 15 kW mechanical capacitor system was studied. It was determined that magnetically supported wheels constructed of advanced composites have the potential for high energy density and high power density. Structural concepts are analyzed that yield the highest energy density of any structural design yet reported. Particular attention was paid to the problem of 'friction' caused by magnetic and I to the second power R losses in the suspension and motor-generator subsystems, and low design friction levels have been achieved. The potentially long shelf life of this system, and the absence of wearing parts, provide superior performance over conventional flywheels supported with mechanical bearings. Costs and economies of energy storage wheels were reviewed briefly.

Michaelis, T. D.↗

Extended performance solar electric propulsion thrust system study. Volume 5. Capacitor-diode voltage multiplier: Technology evaluation

A 1-kW capacitor-diode voltage multiplier (CDVM) was designed, fabricated and tested to demonstrate the power of feasibility of high power CDVM's and to verify the analytical techniques that had been used to predict the performance characteristics of a 6-kw CDVM. High efficiency (96.2%), a low ratio of component weight to power (0.55 kg/kW), and low output ripple voltage (less than 1%, peak to peak) were obtained during the operation of a 1-kW CDVM various input line, load current, and load fault conditions.

Martinelli, R. M.↗

A 30-cm mercury ion thruster performance with a 1 kW capacitor-diode voltage multiplier beam supply

A 1 kW solar array and capacitor-diode voltage multiplier converter (S/A-CDVM) was successfully integrated with a 30 cm diameter mercury ion thruster system to provide ion beam power. Measurements were made to compare steady state and transient response performance of a conventional bridge converter with the S/A-CDVM converter used for the ion beam supply. The ability to recover from screen to accelerator arcs and promptly re-establish stable thruster performance was demonstrated. Solar array transient response to thruster arcing was measured.

Terdan, F. F.↗

30-cm mercury ion thruster performance with a 1 kW capacitor-diode voltage multiplier beam supply

A 1 kW Solar Array and Capacitor-Diode Voltage Multiplier Converter (S/A-CDVM) has been successfully integrated with a 30 cm-diameter mercury ion thruster system to provide ion beam power. Measurements were made to compare steady state and transient response performance of a conventional bridge converter with the S/A-CDVM converter used for the ion beam supply. The ability to recover from screen to accelerator arcs and promptly re-establish stable thruster performance was demonstrated. Solar array transient response to thruster arcing was also measured.

Terdan, F. F.↗

Improved metalized polycarbonate capacitor

Modified metallized polycarbonate-film capacitor withstands 500 thermal cycles between 55 and 125 C replacing conventional devices which typically withstand 10 such cycles.

Kellerman, H. J.↗

High-energy-density cylindrical capacitors

Manufacturing technique produces high quality metalized-film cylindrical capacitors of energy density greater than 0.1 J/g uncased, using either 24-gage polyvinylidene flouride or 14-gage polycarbonate film. Components are wound wrinkle-free on hollow PTFE cores, using winding machine that applies constant dynamically controlled tension to film during winding operation.

Parker, R. D.↗

Ceramic capacitor insulation resistance failures accelerated by low voltage

Ceramic capacitors failed insulation resistance testing at less than one-tenth their rated voltage. Many failures recovered as the voltage was increased. Comprehensive failure analysis techniques, some of which are unprecedented, were used to examine these failures. It was determined that there was more than one failure mechanism, and the results indicate a need for special additional screening.

Brennan, T. F.↗

Study of surge current effects on solid tantalum capacitors

Results are presented of a 2,000 hour cycled life test program conducted to determine the effect of short term surge current screening on approximately 47 micron f/volt solid tantalum capacitors. The format provides average values and standard deviations of the parameters, capacitance, dissipation factor, and equivalent series resistance at 120 Hz, 1KHz, abd 40 KHz.

Source record↗

IC Capacitors on Groups III-to-V Substrates

Oxides applied by a "spin-on" process have been used to fabricate capacitors on gallium arsenide and indium phosphide substrates: they might also be used with other compounds of elements in groups III to V of the periodic table. The III-to-V materials are attractive for integrated circuits because they offer responses potentially six times faster than silicon.

Alcorn, G. E.↗

Performance comparison: Aluminum electrolytic and solid tantalum capacitor

Several key electrical and environmental parameters of latest technology aluminum electrolytic and solid tantalum capacitors were evaluated in terms of price fluctuations of tantalum metal. Performance differences between solid tantalums and aluminum electrolytics are examined.

Hawthornthwaite, B. G.↗

Effects of severe stressing on tantalum capacitors

The ultimate capabilities of an all tantalum capacitor were determined and evaluated. The evaluation included: 175 C life; 100 cycle thermal shock; 70 g random vibration; 3000 g shock; and 90 C ase ripple current.

Shakar, J. F.↗

Capacitors, thermal rating/derating (ac-dc operation)

Application techniques for determining performance and ratings of cased capacitors under combined operation as a function of the actual operating conditions are described. Thermal impedances between the case and external environment and between the internal hot spot and case are taken into account.

Borough, J. W.↗

Accelerated life testing and reliability of high K multilayer ceramic capacitors

The reliability of one lot of high K multilayer ceramic capacitors was evaluated using accelerated life testing. The degradation in insulation resistance was characterized as a function of voltage and temperature. The times to failure at a voltage-temperature stress conformed to a lognormal distribution with a standard deviation approximately 0.5.

Minford, W. J.↗

A cause of the non-solderability of ceramic capacitor terminations

The results of an analysis into the cause of the non-solderability of multiple defective part lots from two capacitor manufacturers are described. This analysis consisted of visual, scanning electron microscopic, surface, and metalographic examinations and analyses. The results indicated that non-solderability results from areas of excess porosity in the termination which are caused by segregation of ink constituents during manufacturing. This segregation can be minimized by proper monitoring and control of process variables; where excess porosity does occur, solderability can be improved by proper precleaning of parts.

Cozzolino, M. J.↗

Failure analysis methods for capacitors

The basic steps in the failure analysis of discrete capacitors used in electronic circuit boards and hybrid assemblies are described. These steps include: visual examination; functional test; disassembly; isolation of the failure site; and documentation.

Hildenbrand, R. L.↗

Pinhole array capacitor for oxide integrity analysis

The integrity of the metal-poly oxide and the gate oxide was evaluated for several 5-micron CMOS-bulk processes. The pinhole array capacitor consists of diffused and poly fingers that form a network of MOS transistors (elements), which are capped by a deposited oxide and metal layer. The smallest structure used in this study contained about 15,000 elements and the largest structure contained about 68,000 elements. Each structure was divided into several subarrays. The structures are placed a number of times on each wafer. From a yield analysis of the subarrays, the elements per defect were found to be typically in excess of 50,000 elements/defect for the metal-poly oxide and 100,000 elements/defect for the gate oxide. From the switching behavior of the transistors, the gate oxide defects were tentatively identified as gate-to-body shorts rather than gate-to-diffusion shorts.

Buehler, M. G.↗