SEARCH · Engineering Papers

Results for “Boron nitride”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 577 records · Page 32

All sources NASA NTRS DOE OSTI

DOE OSTI2020

Plasma etching of wide bandgap and ultrawide bandgap semiconductors

The precise patterning of front-side mesas, backside vias, and selective removal of ternary alloys are all needed for power device fabrication in the various wide bandgap (AlGaN/GaN, SiC) and ultrawide bandgap (high Al-content alloys, boron nitride, Ga2O3, diamond) semiconductor technologies. The plasma etching conditions used are generally ion-assisted because of the strong bond strengths in these materials, and this creates challenges for the choice of masks in order to have sufficient selectivity over the semiconductor and to avoid mask erosion and micromasking issues. It can also be challenging to achieve practical etch rates without creating excessive damage in the patterned surface. The authors review the optimum choices for plasma chemistries for each of the semiconductors and acknowledge the pioneering work of John Coburn, who first delineated the ion-assisted etch mechanism.

42 ENGINEERING↗

DOE OSTI2020

First-principles study of magnetism and electric field effects in 2D systems

This review article provides a bird's-eye view of what first-principles based methods can contribute to next-generation device design and simulation. After a brief overview of methods and capabilities in the area, the authors focus on published work by their group since 2015 and current work on CrI3. The authors introduce both single- and dual-gate models in the framework of density functional theory and the constrained random phase approximation in estimating the Hubbard U for 2D systems vs their 3D counterparts. A wide range of systems, including graphene-based heterogeneous systems, transition metal dichalcogenides, and topological insulators, and a rich array of physical phenomena, including the macroscopic origin of polarization, field effects on magnetic order, interface state resonance induced peak in transmission coefficients, spin filtration, etc., are covered. For CrI3, the authors present their new results on bilayer systems such as the interplay between stacking and magnetic order, pressure dependence, and electric field induced magnetic phase transitions. The authors find that a bare bilayer CrI3, graphene|bilayer CrI3|graphene, hexagonal boron nitride (h-BN)|bilayer CrI3|h-BN, and h-BN|bilayer CrI3|graphene all have a different response at high field, while at small field, the difference is small except for graphene|bilayer CrI3|graphene. The authors conclude with discussion of some ongoing work and work planned in the near future, with the inclusion of further method development and applications.

Cheng, Hai-Ping (ORCID:0000000159901725)↗

DOE OSTI2024

Unzipping hBN with ultrashort mid-infrared pulses

Manipulating the nanostructure of materials is critical for numerous applications in electronics, magnetics, and photonics. However, conventional methods such as lithography and laser writing require cleanroom facilities or leave residue. We describe an approach to creating atomically sharp line defects in hexagonal boron nitride (hBN) at room temperature by direct optical phonon excitation with a mid-infrared pulsed laser from free space. We term this phenomenon “unzipping” to describe the rapid formation and growth of a crack tens of nanometers wide from a point within the laser-driven region. Formation of these features is attributed to the large atomic displacement and high local bond strain produced by strongly driving the crystal at a natural resonance. This process occurs only via coherent phonon excitation and is highly sensitive to the relative orientation of the crystal axes and the laser polarization. Its cleanliness, directionality, and sharpness enable applications such as polariton cavities, phonon-wave coupling, and in situ flake cleaving.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Landau-phonon polaritons in Dirac heterostructures

Polaritons are light-matter quasiparticles that govern the optical response of quantum materials at the nanoscale, enabling on-chip communication and local sensing. Here, we report Landau-phonon polaritons (LPPs) in magnetized charge-neutral graphene encapsulated in hexagonal boron nitride (hBN). These quasiparticles emerge from the interaction of Dirac magnetoexciton modes in graphene with the hyperbolic phonon polariton modes in hBN. Using infrared magneto-nanoscopy, we reveal the ability to completely halt the LPP propagation in real space at quantized magnetic fields, defying the conventional optical selection rules. The LPP-based nanoscopy also tells apart two fundamental many-body phenomena: the Fermi velocity renormalization and field-dependent magnetoexciton binding energies. Our results highlight the potential of magnetically tuned Dirac heterostructures for precise nanoscale control and sensing of light-matter interaction.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Imaging orbital ferromagnetism in a moiré Chern insulator

Capturing exotic magnetism Ferromagnetism is associated with the breaking of time-reversal symmetry, most frequently by the spin degree of freedom. Although the orbital motion of electrons can also contribute to ferromagnetism, in most materials, it is small relative to the spin contribution. Tschirhart et al. showed that the reverse is true in an unusual magnetic state hosted by twisted bilayer graphene. Their scanning magnetometry measurements were consistent with ferromagnetism of predominantly orbital origin. Science , abd3190, this issue p. 1323

Science & Technology - Other Topics↗

DOE OSTI2022

Spectroscopy signatures of electron correlations in a trilayer graphene/hBN moiré superlattice

ABC-stacked trilayer graphene/hexagonal boron nitride moiré superlattice (TLG/hBN) has emerged as a playground for correlated electron physics. Here, we report spectroscopy measurements of dual-gated TLG/hBN using Fourier transform infrared photocurrent spectroscopy. We observed a strong optical transition between moiré minibands that narrows continuously as a bandgap is opened by gating, indicating a reduction of the single-particle bandwidth. At half-filling of the valence flat band, a broad absorption peak emerges at ~18 milli–electron volts, indicating direct optical excitation across an emerging Mott gap. Similar photocurrent spectra are observed in two other correlated insulating states at quarter- and half-filling of the first conduction band. Our findings provide key parameters of the Hubbard model for the understanding of electron correlation in TLG/hBN.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Negative refraction in hyperbolic hetero-bicrystals

We visualized negative refraction of phonon polaritons, which occurs at the interface between two natural crystals. The polaritons—hybrids of infrared photons and lattice vibrations—form collimated rays that display negative refraction when passing through a planar interface between the two hyperbolic van der Waals materials: molybdenum oxide (MoO 3 ) and isotopically pure hexagonal boron nitride (h 11 BN). At a special frequency ω 0 , these rays can circulate along closed diamond-shaped trajectories. We have shown that polariton eigenmodes display regions of both positive and negative dispersion interrupted by multiple gaps that result from polaritonic-level repulsion and strong coupling.

Science & Technology - Other Topics↗

DOE OSTI2024

Ultrafast high-endurance memory based on sliding ferroelectrics

The persistence of voltage-switchable collective electronic phenomena down to the atomic scale has extensive implications for area- and energy-efficient electronics, especially in emerging nonvolatile memory technology. We investigate the performance of a ferroelectric field-effect transistor (FeFET) based on sliding ferroelectricity in bilayer boron nitride at room temperature. Sliding ferroelectricity represents a different form of atomically thin two-dimensional (2D) ferroelectrics, characterized by the switching of out-of-plane polarization through interlayer sliding motion. We examined the FeFET device employing monolayer graphene as the channel layer, which demonstrated ultrafast switching speeds on the nanosecond scale and high endurance exceeding 10 11 switching cycles, comparable to state-of-the-art FeFET devices. These characteristics highlight the potential of 2D sliding ferroelectrics for inspiring next-generation nonvolatile memory technology.

Science & Technology - Other Topics↗

DOE OSTI2025

Fractional Quantum Anomalous Hall Effect

The realization of the fractional quantum anomalous Hall effect (FQAHE) in a zero-field fractional Chern insulator is a new advancement in condensed matter physics, resulting from the interplay among strong correlations, topology, and spontaneous time-reversal symmetry breaking in lattice systems. In this review, we highlight the experimental and theoretical progress toward achieving FQAHE in two material platforms: twisted bilayer MoTe 2 and rhombohedral-stacked multilayer graphene. These systems host narrow topological bands with nontrivial Chern numbers, enabling interaction-driven fractionalized states analogous to the fractional quantum Hall effect, but without external magnetic fields. We discuss how spontaneous ferromagnetism, moiré lattice reconstruction, and band topological effects underpin the emergence of FQAHE in twisted MoTe 2 . We describe experimental discoveries of zero-field fractional Chern insulators in both transport and optical experiments, as well as signatures of composite Fermi liquids and higher-energy Chern band, which may shed light on engineering nonabelian states. In rhombohedral graphene/hexagonal boron nitride moiré superlattices, we review the recent observations of fractionally quantized Hall resistance, connections between FQAHE and extended quantum anomalous Hall phases, and the coexistence of superconductivity and FQAHE. Furthermore, these discoveries not only deepen our understanding of strongly correlated topological matter but also open new frontiers for exploring nonabelian anyons, fault-tolerant quantum computation, and topological opto-spintronics free of magnetic fields.

bilayer↗

DOE OSTI2023

Application of the Solute-Solvent EMF Cell to Measure Activity of NiF 2 in Molten FLiNaK

Electromotive force (emf) measurements made using a combination of solute- and solvent-based electrodes were used to determine the activity of NiF 2 in molten FLiNaK eutectic at 823 K across a concentration range of x NiF2 = 5.2 × 10 –4 –1.0 × 10 –2 . The solute emf values were measured using electrodes consisting of Ni wires immersed in FLiNaK with dissolved NiF 2 contained in graphite crucibles. The measured emf values were then converted to the FLiNaK Eutectic Potassium Electrode (FEKE) potential and used to quantify the activity of dissolved NiF 2 . This quantification was based upon comparative measurements of a reference solvent electrode consisting of a K-Bi alloy immersed in pure FLiNaK contained in a boron nitride crucible and a solute electrode. Short cell lives were characteristic of the measurements due to the corrosive nature of the fluoride salts. Quantifying the activity of NiF 2 will improve the utility of Ni 2+ /Ni reference electrodes in molten fluoride salts, which are notoriously difficult electrolytes to work with because of their reactivity. In conclusion, this work demonstrates the general nature of the solute-solvent approach as a repeatable, easily employed method for measuring the activity values of electroactive species in a variety of molten salts to improve understanding of the electroactive species behavior in these systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2025

Investigation of a U(IV)/U(III) Thermodynamic Reference Electrode for High-Temperature Molten Fluoride Salts

While thermodynamic reference electrodes with known and stable potentials are common in traditional aqueous systems, the high temperature and corrosive environment of a molten fluoride salt makes achieving long term stability with a thermodynamic reference electrode challenging, especially at temperatures of 600°C or higher. In this work, a thermodynamic reference electrode consisting of U(IV)/U(III) in a boron nitride compartment was evaluated for use in FLiBe at temperatures ≥ 600°C. FLiBe used in the study was purified by AlphaTech's proprietary process and characterized by ICP-MS and square wave voltammetry. The free oxide concentration was <2 ppm. Using the purified FLiBe, the U(IV)/U(III) thermodynamic reference electrode was shown to provide a stable, well-defined, and reproducible potential for more than 600+ hours of use in different tests. Moreover, the thermodynamic reference electrode showed a consistent potential with no signs of failure, even after being cooled between tests and then reheated for reuse. Thus, the U(IV)/U(III) reference electrode is suitable for use in rigorous electrochemical studies in molten fluoride salts. As a result, it may be useful as a common standard, facilitating the advancement of nuclear applications such as isotope separation or online monitoring of reactor systems through improved certainty in the measurement of thermodynamic potentials.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

DOE OSTI2024

General algorithm for characterization of donor-acceptor pair recombination processes in solid-state materials

Radiative recombination processes can occur in solid-state systems through the pairing of donor and acceptor defects of the lattice. Recently, donor-acceptor pairs (DAP) have been proposed as promising candidates for quantum applications, and their signature has been observed in emerging low-dimensional materials. Therefore, the identification of such processes is gaining interest and requires methods to efficiently and reliably characterize them. Here, we introduce a general algorithm to identify DAP processes starting from the experimental photoluminescence (PL) emission spectrum and basic material parameters, including the lattice structure and dielectric constant. The algorithm recognizes possible DAP transitions from the emission pattern in the spectrum and returns the characteristic energy of the DAP transition and the separation between the donor and acceptor sites. By testing the algorithm on the photoluminescence spectrum of hexagonal boron nitride (hBN), we show that our method is robust against experimental errors and adds new capabilities to the investigation toolbox of semiconductors and their optical properties.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Anomalous ultrafast all-optical Hall effect in gapped graphene

We propose an ultrafast all-optical anomalous Hall effect in two-dimensional (2D) semiconductors of hexagonal symmetry such as gapped graphene (GG), transition metal dichalcogenides (TMDCs), and hexagonal boron nitride (h-BN). To induce such an effect, the material is subjected to a sequence of two strong-field single-optical-cycle pulses: A chiral pump pulse followed within a few femtoseconds by a probe pulse linearly polarized in the armchair direction of the 2D lattice. Due to the effect of topological resonance, the first (pump) pulse induces a large chirality (valley polarization) in the system, while the second pulse generates a femtosecond pulse of the anomalous Hall current. The proposed effect is fundamentally the fastest all-optical anomalous Hall effect possible in nature. It can be applied to ultrafast all-optical storage and processing of information, both classical and quantum.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Materials Data on BN by Materials Project

BN is Boron Nitride structured and crystallizes in the hexagonal P6_3/mmc space group. The structure is two-dimensional and consists of two BN sheets oriented in the (0, 0, 1) direction. B3+ is bonded in a trigonal planar geometry to three equivalent N3- atoms. All B–N bond lengths are 1.45 Å. N3- is bonded in a trigonal planar geometry to three equivalent B3+ atoms.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Materials Data on WN by Materials Project

NW1 is Boron Nitride structured and crystallizes in the hexagonal P6_3mc space group. The structure is three-dimensional. W3+ is bonded in a rectangular see-saw-like geometry to four equivalent N3- atoms. There are one shorter (2.00 Å) and three longer (2.08 Å) W–N bond lengths. N3- is bonded in a rectangular see-saw-like geometry to four equivalent W3+ atoms.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Materials Data on PdN by Materials Project

PdN is Boron Nitride structured and crystallizes in the hexagonal P6_3/mmc space group. The structure is two-dimensional and consists of two PdN sheets oriented in the (0, 0, 1) direction. Pd2+ is bonded in a trigonal planar geometry to three equivalent N2- atoms. All Pd–N bond lengths are 1.95 Å. N2- is bonded in a trigonal planar geometry to three equivalent Pd2+ atoms.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Materials Data on IrN by Materials Project

IrN is Boron Nitride structured and crystallizes in the hexagonal P6_3mc space group. The structure is three-dimensional. Ir3+ is bonded in a rectangular see-saw-like geometry to four equivalent N3- atoms. There are three shorter (2.04 Å) and one longer (2.10 Å) Ir–N bond lengths. N3- is bonded in a rectangular see-saw-like geometry to four equivalent Ir3+ atoms.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Materials Data on BeH by Materials Project

BeH is Boron Nitride structured and crystallizes in the hexagonal P6_3mc space group. The structure is three-dimensional. Be is bonded in a rectangular see-saw-like geometry to four equivalent H atoms. All Be–H bond lengths are 1.67 Å. H is bonded in a rectangular see-saw-like geometry to four equivalent Be atoms.

36 MATERIALS SCIENCE↗