Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “thermal switches”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 559 records · Page 31
All sourcesNASA NTRSDOE OSTI
NASA NTRS2002

Cryogenic Electronics Being Developed for Space Operation

Planetary exploration missions and deep space probes require electrical power management and control systems that can operate efficiently and reliably in very low temperature environments. Presently, spacecraft operating in the cold environment of deep space carry a large number of radioisotope heating units to maintain the surrounding temperature of the onboard electronics at approximately 20 C. Electronics capable of operation at cryogenic temperatures would not only tolerate the hostile environment of deep space but also reduce system size and weight by eliminating or reducing the radioisotope heating units and their associate structures. Thereby, such electronics would reduce system development as well as launch costs. In addition, power electronic circuits designed for operation at low temperatures are expected to result in more efficient systems than those at room temperature. This improvement results because semiconductor and dielectric materials have better behavior and tolerance in their electrical and thermal properties at low temperatures. The Low Temperature Electronics Program at the NASA Glenn Research Center is focusing on the research and development of electrical components, circuits, and systems suitable for applications in the aerospace environment and in deep space exploration missions. Research is being conducted on devices and systems for reliable use down to cryogenic temperatures. Some of the commercial off-the-shelf as well as developed components that are being characterized include semiconductor switching devices, resistors, magnetics, and capacitors. Semiconductor devices and integrated circuits including digital-to-analog and analog-to-digital converters, dc-dc converters, operational amplifiers, and oscillators are also being investigated for potential use in low-temperature applications. For example, the output response of an advanced oscillator at room temperature and at -190 C is shown. Most oscillators can operate at temperatures down to only -55 C. It can be seen that, for this oscillator, the low temperature of -196 C changed the leading and trailing edges of the oscillator pulses by producing overshoot. The research and development efforts performed under the Low Temperature Electronics Program at Glenn are being carried out through collaboration with other Government agencies, industrial and aerospace companies, and academia. The program supports missions as well as technology development efforts at NASA's Goddard Space Flight Center and Langley Research Center, and the Jet Propulsion Laboratory.

Patterson, Richard L.↗
DOE OSTI2021

Temperature and solvent-dependent photoluminescence quenching in [Ru(bpy) 2 (bpy-cc-AQ)] 2+

I have herein investigated the solvent-dependent photoluminescence quenching mechanism of [Ru(bpy) 2 (bpy-cc-AQ)] 2+ using variable temperature emission spectroscopies. In this wok, the photophysics of this complex are dominated by an excited-state thermal equilibrium between a photoluminescent 3 MLCT state and a charge-separated state that lies higher in energy relative to the 3 MLCT state in low polarity solvents and approximately isoenergetic in high polarity solvents. Furthermore, an unusual photoluminescence temperature-dependence in high polarity solvents is shown to arise from competition between enthalpic factors favouring the charge-separated state and entropic factors favouring the photoluminescent 3 MLCT state, analogous to the molecular light-switch effect of [Ru(bpy) 2 (dppz)] 2+ . The solvent-dependent photoluminescence quenching of [Ru(bpy)2(bpy-cc-AQ)] 2+ is attributed to two key solvent-dependent factors: (1) the excited-state equilibrium position and (2) the rate of charge-recombination from the charge-separated state.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS2003

Electronic Components and Circuits for Extreme Temperature Environments

Planetary exploration missions and deep space probes require electrical power management and control systems that are capable of efficient and reliable operation in very low temperature environments. Presently, spacecraft operating in the cold environment of deep space carry a large number of radioisotope heating units in order to maintain the surrounding temperature of the on-board electronics at approximately 20 C. Electronics capable of operation at cryogenic temperatures will not only tolerate the hostile environment of deep space but also reduce system size and weight by eliminating or reducing the radioisotope heating units and their associate structures; thereby reducing system development as well as launch costs. In addition, power electronic circuits designed for operation at low temperatures are expected to result in more efficient systems than those at room temperature. This improvement results from better behavior and tolerance in the electrical and thermal properties of semiconductor and dielectric materials at low temperatures. The Low Temperature Electronics Program at the NASA Glenn Research Center focuses on research and development of electrical components, circuits, and systems suitable for applications in the aerospace environment and deep space exploration missions. Research is being conducted on devices and systems for reliable use down to cryogenic temperatures. Some of the commercial-off-the-shelf as well as developed components that are being characterized include switching devices, resistors, magnetics, and capacitors. Semiconductor devices and integrated circuits including digital-to-analog and analog-to-digital converters, DC/DC converters, operational amplifiers, and oscillators are also being investigated for potential use in low temperature applications. An overview of the NASA Glenn Research Center Low Temperature Electronic Program will be presented in this paper. A description of the low temperature test facilities along with selected data obtained through in-house component and circuit testing will also be discussed. Ongoing research activities that are being performed in collaboration with various organizations will also be presented.

Patterson, Richard L.↗
NASA NTRS2007

SiC Multi-Chip Power Modules as Power-System Building Blocks

The term "SiC MCPMs" (wherein "MCPM" signifies "multi-chip power module") denotes electronic power-supply modules containing multiple silicon carbide power devices and silicon-on-insulator (SOI) control integrated-circuit chips. SiC MCPMs are being developed as building blocks of advanced expandable, reconfigurable, fault-tolerant power-supply systems. Exploiting the ability of SiC semiconductor devices to operate at temperatures, breakdown voltages, and current densities significantly greater than those of conventional Si devices, the designs of SiC MCPMs and of systems comprising multiple SiC MCPMs are expected to afford a greater degree of miniaturization through stacking of modules with reduced requirements for heat sinking. Moreover, the higher-temperature capabilities of SiC MCPMs could enable operation in environments hotter than Si-based power systems can withstand. The stacked SiC MCPMs in a given system can be electrically connected in series, parallel, or a series/parallel combination to increase the overall power-handling capability of the system. In addition to power connections, the modules have communication connections. The SOI controllers in the modules communicate with each other as nodes of a decentralized control network, in which no single controller exerts overall command of the system. Control functions effected via the network include synchronization of switching of power devices and rapid reconfiguration of power connections to enable the power system to continue to supply power to a load in the event of failure of one of the modules. In addition to serving as building blocks of reliable power-supply systems, SiC MCPMs could be augmented with external control circuitry to make them perform additional power-handling functions as needed for specific applications: typical functions could include regulating voltages, storing energy, and driving motors. Because identical SiC MCPM building blocks could be utilized in a variety of ways, the cost and difficulty of designing new, highly reliable power systems would be reduced considerably. Several prototype DC-to-DC power-converter modules containing SiC power-switching devices were designed and built to demonstrate the feasibility of the SiC MCPM concept. In anticipation of a future need for operation at high temperature, the circuitry in the modules includes high-temperature inductors and capacitors. These modules were designed to be stacked to construct a system of four modules electrically connected in series and/or parallel. The packaging of the modules is designed to satisfy requirements for series and parallel interconnection among modules, high power density, high thermal efficiency, small size, and light weight. Each module includes four output power connectors two for serial and two for parallel output power connections among the modules. Each module also includes two signal connectors, electrically isolated from the power connectors, that afford four zones for signal interconnections among the SOI controllers. Finally, each module includes two input power connectors, through which it receives power from an in-line power bus. This design feature is included in anticipation of a custom-designed power bus incorporating sockets compatible with snap-on type connectors to enable rapid replacement of failed modules.

Lostetter, Alexander↗
DOE OSTI2026

Economic NMPC for a Reversible Solid Oxide Cell

Reversible solid oxide fuel cells (rSOCs) offer the flexibility to operate in tandem with the electric grid by switching between fuel cell and electrolysis modes based on real-time electricity prices. However, their complex, tightly coupled dynamic behavior poses significant challenges in determining optimal operating strategies. In this work, we present an economic nonlinear model predictive control (E-NMPC) framework to optimize the operation of rSOCs. The proposed E-NMPC is applied to a detailed rSOC flowsheet model that includes a utility scale rSOC module as well as balance-of-plant equipment necessary for thermal management. Our results demonstrate that in fuel cell mode, the E-NMPC strategy reduces hydrogen consumption compared to conventional set-point tracking NMPC, while maintaining the same level of electricity output. Also, in electrolysis mode, the E-NMPC yields a marginal improvement in hydrogen production. In addition, we explore the integration of a battery with the rSOC system to enhance flexibility in meeting electricity production and consumption targets.

29 ENERGY PLANNING, POLICY, AND ECONOMY↗
NASA NTRS1989

High-Performance Power-Semiconductor Packages

A 600-V, 50-A transistor and 1,200-V, 50-A diode in rugged, compact, lightweight packages intended for use in inverter-type power supplies having switching frequencies up to 20 kHz. Packages provide low-inductance connections, low loss, electrical isolation, and long-life hermetic seal. Low inductance achieved by making all electrical connections to each package on same plane. Also reduces high-frequency losses by reducing coupling into inherent shorted turns in packaging material around conductor axes. Stranded internal power conductors aid conduction at high frequencies, where skin effect predominates. Design of packages solves historical problem of separation of electrical interface from thermal interface of high-power semiconductor device.

Renz, David↗
NASA NTRS1990

Structure and evolution of irradiated accretion disks. I - Static thermal equilibrium structure. II - Dynamical evolution of a thermally unstable torus

The thermal equilibrum structure and dynamical behavior of externally irradiated accretion disks are investigated. For radiative disks only the surface layer is heated, while for convective disks the heat penetrates deeply into the disk. For sufficiently strong radiation and given irradiation flux F(irr), the disk is completely stabilized against thermal instabilities of the sort invoked to explain dwarf novae. For moderately strong irradiation there is still an unstable branch in the thermal equilibrium curve. In typical soft X-ray transients, the disk is unstable against the dwarf-nova type instability. Fixed F(irr) on accretion disk annuli reduces the amplitude and the quiescent times and increases the outburst duration of the resultant light curves. Varying F(irr) in proportion to the mass accretion rate at the disks's inner edge results in light curves with a plateau in the decay from outbursts. In the case when irradiation is suddenly switched on, a temperature inversion results which leads to the formation of an accretion corona.

Tuchman, Y.↗
NASA NTRS1994

Copper Alloy For High-Temperature Uses

Alloy of Cu/8Cr/4Nb (numbers indicate parts by atom percent) improved over older high-temperature copper-based alloys in that it offers enhanced high temperature strength, resistance to creep, and ductility while retaining most of thermal conductivity of pure copper; in addition, alloy does not become embrittled upon exposure to hydrogen at temperatures as high as 705 degrees C. Designed for use in presence of high heat fluxes and active cooling; for example, in heat exchangers in advanced aircraft and spacecraft engines, and other high-temperature applications in which there is need for such material. High conductivity and hardness of alloy exploited in welding electrodes and in high-voltage and high-current switches and other applications in which wear poses design problem.

Dreshfield, Robert L.↗
NASA NTRS1999

The New Millennium Program: Validating Advanced Technologies for Future Space Missions

This presentation reviews the activities of the New Millennium Program (NMP) in validating advanced technologies for space missions. The focus of these breakthrough technologies are to enable new capabilities to fulfill the science needs, while reducing costs of future missions. There is a broad spectrum of NMP partners, including government agencies, universities and private industry. The DS-1 was launched on October 24, 1998. Amongst the technologies validated by the NMP on DS-1 are: a Low Power Electronics Experiment, the Power Activation and Switching Module, Multi-Functional Structures. The first two of these technologies are operational and the data analysis is still ongoing. The third program is also operational, and its performance parameters have been verified. The second program, DS-2, was launched January 3 1999. It is expected to impact near Mars southern polar region on 3 December 1999. The technologies used on this mission awaiting validation are an advanced microcontroller, a power microelectronics unit, an evolved water experiment and soil thermal conductivity experiment, Lithium-Thionyl Chloride batteries, the flexible cable interconnect, aeroshell/entry system, and a compact telecom system. EO-1 on schedule for launch in December 1999 carries several technologies to be validated. Amongst these are: a Carbon-Carbon Radiator, an X-band Phased Array Antenna, a pulsed plasma thruster, a wideband advanced recorder processor, an atmospheric corrector, lightweight flexible solar arrays, Advanced Land Imager and the Hyperion instrument

Minning, Charles P.↗
NASA NTRS2014

5.8kV SiC PiN Diode for Switching of High-Efficiency Inductive Pulsed Plasma Thruster Circuits

Inductive Pulsed Plasma Thruster (IPPT) pulse circuits, such as those needed to operate the Pulsed Inductive Thruster (PIT), are required to quickly switch capacitor banks operating at a period of μs while conducting current at levels on the order of at least 10 kA. [1,2] For all iterations of the PIT to date, spark gaps have been used to discharge the capacitor bank through an inductive coil. Recent availability of fast, high‐power solid state switching devices makes it possible to consider the use of semiconductor switches in modern IPPTs. In addition, novel pre‐ionization schemes have led to a reduction in discharge energy per pulse for electric thrusters of this type, relaxing the switching requirements for these thrusters. [3,4] Solid state switches offer the advantage of greater controllability and reliability, as well as decreased drive circuit dimensions and mass relative to spark gap switches. The use of solid state devices such as Integrated Gate Bipolar Transistors (IGBTs), Gate Turn‐off Thyristors (GTOs) and Silicon‐Controlled Rectifiers (SCRs) often involves the use of power diodes. These semiconductor devices may be connected antiparallel to the switch for protection from reverse current, or used to reduce power loss in a circuit by clamping off current ringing. In each case, higher circuit efficiency may be achieved by using a diode that is able to transition, or 'switch,' from the forward conducting state ('on' state) to the reverse blocking state ('off' state) in the shortest amount of time, thereby minimizing current ringing and switching losses. Silicon Carbide (SiC) PiN diodes offer significant advantages to conventional fast‐switching Silicon (Si) diodes for high power and fast switching applications. A wider band gap results in a breakdown voltage 10 times that of Si, so that a SiC device may have a thinner drift region for a given blocking voltage. [5] This leads to smaller, lighter devices for high voltage applications, as well as reduced forward conduction losses, faster reverse recovery time (faster turn‐off), and lower‐magnitude reverse recovery current. In addition, SiC devices have lower leakage current as compared to their Si counterparts, and a high thermal conductivity, potentially allowing the former to operate at higher temperatures with a smaller, lighter heatsink (or no heatsink at all).

Toftul, Alexandra↗
NASA NTRS1980

A new phase for NASA's communications satellite program

NASA's research in communications satellite technology is discussed, including orbit-efficient techniques and applications by the commercial sector. Attention is given to expanding the capacities of the C-band (6-4 GHz) and the Ku-band (14-11 GHz), opening the Ka-band (30/20 GHz), broadly applied 're-use' of the spectrum, and developing multibeam spacecraft antennas with on-board switching. Increasing wideband services in video, high-speed data, and voice trunking is considered, as are narrow-band systems that may be used for data collection or public safety, with possible expansion to a thin-route satellite system. In particular, communication for medical, disaster, or search-and-rescue emergencies may be met by the integration of a satellite service with land mobile communications via terrestrial radio links. Also considered is a large geostationary platform providing electrical power, thermal rejection, and orbital station-keeping for many communications payloads.

Dement, D. K.↗
NASA NTRS2005

Potassium-bearing Iron-Nickel Sulfides in Nature and High-Pressure Experiments: Geochemical Consequences of Potassium in the Earth's Core

Introduction: Potassium (K) as a large ion lithophile element has dominantly been concentrated in the Earth s crust and the mantle through differentiation, and in the form of K-40 contributes to the planet s heat budget. However, whether or not K also enters core-forming phases, has been debated for over three decades. Arguments favoring entry of K in the core are based on: (1) K-sulfide (with Fe, Ni, Cu, Na, and Cl; djerfisherite) found in highly reduced enstatite chondrites (or aubrites, enstatite achondrites); (2) demonstration that K, owing to an s-d electronic switch at high-pressure, exhibits transition- element like character, (3) solubility of measurable K in Fe-Ni-S liquids at high pressure, temperature conditions, and (4) models of cooling of the core that seem to require, besides convection, some form of radioactivity, and thus lending support to the experimental work. In this contribution, we assess the effect of sequestering K in the core, as it is perhaps an element that is a key to reconciling geochemistry, paleomagnetism, accretion, and thermal evolution models for the planet.

Keshav, S.↗
DOE OSTI2022

Quantification of complex protective surface oxide layer formed during plasma jet exposure of multicomponent ultra-high temperature carbides

Multicomponent ultra-high temperature ceramics (MC-UHTCs) has garnered attention due to their improved thermo-mechanical and oxidation properties. MC-UHTC was progressively formed by adding a UHTC component at each step, producing binary, ternary and quaternary UHTC systems, processed by spark plasma sintering (SPS). Here, we investigate the role of multi-elements and thermochemical stability of the surface oxide layer formed during plasma arc jet exposure (T > 2500 °C) of MC-UHTCs using core-level X-ray photoelectron spectroscopy (XPS) correlated with the structural investigation. The results indicate that adding a UHTC component improves oxidation resistance due to the assemblage of refractory phases forming complex mixed oxides via preferential oxidation. XPS spectra of Ta4f, Nb3d, Ti1p, and Hf4f showed that the nature of the chemical bonds switched from metal carbides to metal oxides (metal oxy-carbides) in the binary system with retained metal carbides in ternary and quaternary UHTCs. The absence of a metal carbide peak in the high-resolution C1s scan of the binary system also supports this finding. The principal complex mixed oxide phases emanate in the exiguous oxidation of MC-UHTCs are quantified using Rietveld analysis. Overall, this study suggests that MC-UHTC is a promising material for possible application in thermal protection systems (TPS).

36 MATERIALS SCIENCE↗
NASA NTRS1999

Detector Assembly and the Ultralow-Temperature Refrigerator for XRS

The X-ray spectrometer (XRS) on the Japanese Astro-E Spacecraft is the first ultra low temperature space borne instrument. The system utilizes a 900g Ferric Ammonium Alum (FAA) Adiabatic Demagnetization Refrigerator (ADR) with a helium-3 gas gap heat switch to cool the detector assembly to 0.060K. The system operates in a "single shot" configuration allowing the system to remain at its operating temperature for about 40 hours in the lab. The on-orbit performance is expected to be about 35 hours with a 97% duty cycle. The detector assembly for XRS consists of a 32 channel microcalorimeter array bias electronics, thermometry, and an anti-coincidence detector that are attached to the cold stage of the ADR. To thermally Isolate the detector system from the superfluid helium reservoir, the detector system is suspended by Kevlar cords and electrical connection in made by L30, 17-micron diameter, tensioned NbTi leads. The detectors are read out in a source-follower arrangement using FET amplifiers operating at 130K mounted in multiply-thermally-isolated assemblies that also use Kevlar and stainless steel wiring. The design and thermal performance of this system will be discussed and compared to the theoretical limits.

Porter, F. S.↗
NASA NTRS2003

Development of UItra-Low Temperature Motor Controllers: Ultra Low Temperatures Evaluation and Characterization of Semiconductor Technologies For The Next Generation Space Telescope

Electronics designed for low temperature operation will result in more efficient systems than room temperature. This improvement is a result of better electronic, electrical, and thermal properties of materials at low temperatures. In particular, the performance of certain semiconductor devices improves with decreasing temperature down to ultra-low temperature (-273 'C). The Low Temperature Electronics Program at the NASA Glenn Research Center focuses on research and development of electrical components and systems suitable for applications in deep space missions. Research is being conducted on devices and systems for use down to liquid helium temperatures (-273 'C). Some of the components that are being characterized include semiconductor switching devices, resistors, magnetics, and capacitors. The work performed this summer has focused on the evaluation of silicon-, silicon-germanium- and gallium-Arsenide-based (GaAs) bipolar, MOS and CMOS discrete components and integrated circuits (ICs), from room temperature (23 'C) down to ultra low temperatures (-263 'C).

Elbuluk, Malik E.↗
NASA NTRS1996

Radiation Protection of New Lightweight Electromagnetic Interference Shielding Materials Determined

Weight savings as high as 80 percent could be achieved by simply switching from aluminum electromagnetic interference (EMI) shielding covers for spacecraft power systems to EMI covers made from intercalated graphite fiber composites. Because EMI covers typically make up about one-fifth of the power system mass, this change would decrease the mass of a spacecraft power system by more than 15 percent. Intercalated graphite fibers are made by diffusing guest atoms or molecules, such as bromine, between the carbon planes of the graphite fibers. The resulting bromine-intercalated fibers have mechanical and thermal properties nearly identical to pristine graphite fibers, but their resistivity is lower by a factor of 5, giving them better electrical conductivity than stainless steel and making these composites suitable for EMI shielding.

Source record↗
DOE OSTI2022

n-Type doping of a solution processed p-type semiconductor using isoelectronic surface dopants for homojunction fabrication

The p-n junction is one of the fundamental requirements for a practical semiconductor-based electronic device. Designing a heterojunction comprising of dissimilar p-type and n-type semiconductors calls for careful energy level considerations, both when selecting the semiconductor materials as well as the metal contacts. A homojunction based on a single semiconductor simplifies this task, as energy levels of the p-type and n-type materials are already fairly similar, allowing for easier selection of contacts. Traditionally, homojunctions rely on doping of a bulk semiconductor to achieve p- and n-type transport through controlled addition of aliovalent dopants via energy-intensive processes such as ion implantation or thermal annealing. Exact control of doping in nanocrystalline semiconductors is significantly more challenging, due to self-purification effects. However, owing to their large surface areas, surface moieties can be utilized to both dope the nanostructures as well as tune their energy levels. Here, we present a facile technique based on an isoelectronic surface dopant in order to achieve p- and n-type materials based on the same semiconductor. We show that thin p-type colloidal Bi 2 Te 3 nanowires can be switched to n-type through surface functionalization, thus increasing the availability of new nanocrystalline solution-processable p-n homojunctions.

42 ENGINEERING↗