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At least 559 records · Page 31

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DOE OSTI2022

Low voltage AC electroluminescence in silicon MOS capacitors

Low power silicon based light source and detector are attractive for on-chip photonic circuits given their ease of process integration. However, conventional silicon light emitting diodes emit photons with energies near the band edge where the corresponding silicon photodetectors lack responsivity. On the other hand, previously reported hot carrier electroluminescent silicon devices utilizing a reverse biased diode require high operating voltages. Here, we investigate hot carrier electroluminescence in silicon metal–oxide–semiconductor capacitors operating under transient voltage conditions. Further, during each voltage transient, large energy band bending is created at the edge of the source contact, much larger than what is achievable at a steady state. As a result, electrons and holes are injected efficiently from a single source contact into the silicon channel at the corresponding voltage transient, where they subsequently undergo impact ionization and phonon-assisted interband recombination. Notably, we show low voltage operation down to 2.8 V by using a 20 nm thick high-κ gate dielectric. We show further voltage scaling is possible by reducing the gate dielectric thickness, thus presenting a low voltage platform for silicon optoelectronic integrated circuits.

42 ENGINEERING↗

NASA NTRS2005

Enhanced quantum efficiency of high-purity silicon imaging detectors by ultralow temperature surface modification using Sb doping

A low temperature process for Sb doping of silicon has been developed as a backsurface treatment for high-purity n-type imaging detectors. Molecular beam epitaxy (MBE) is used to achieve very high dopant incorporation in a thin, surface-confined layer. The growth temperature is kept below 450 °C for compatibility with Al-metallized devices. Imaging with MBE-modified 1kx1k charge coupled devices ((CCDs) operated in full depletion has been demonstrated. Dark current is comparable to the state-of-the-art process, which requires a high temperature step. Quantum efficiency is improved, especially in the UV, for thin doped layers placed closer to the backsurface. Near 100% internal quantum efficiency has been demonstrated in the ultraviolet for a CCD with a 1.5 nm silicon cap layer.

Nikzad, Shouleh↗

NASA NTRS2005

Enhanced quantum efficiency of high-purity silicon imaging detectors by ultralow temperature surface modification using Sb doping

A low temperature process for Sb doping of silicon has been developed as a backsurface treatment for high-purity n-type imaging detectors. Molecular beam epitaxy (MBE) is used to achieve very high dopant incorporation in a thin, surface-confined layer. The growth temperature is kept below 450 (deg)C for compatibility with Al-metallized devices. Imaging with MBE-modified 1kx1k charge coupled devices (CCDs) operated in full depletion has been demonstrated. Dark current is comparable to the state-of-the-art process, which requires a high temperature step. Quantum efficiency is improved, especially in the UV, for thin doped layers placed closer to the backsurface. Near 100% internal quantum efficiency has been demonstrated in the ultraviolet for a CCD with a 1.5 nm silicon cap layer.

charged coupled devices (CCDs)↗

NASA NTRS1966

Vapor grown silicon dioxide improves transistor base-collector junctions

Vapor grown silicon dioxide layer protects base-collector junction in silicon planar transistors during the emitter diffusion process. This oxide fills in any imperfections that exist in the thermally grown oxide layer and is of greater thickness than that layer. This process is used to deposit protective silicon dioxide coatings on optical surfaces.

Carley, D. R.↗

NASA NTRS1986

A silane-based polysilicon process

A silane based polysilicon process plant was constructed in Miami, Oklahoma. The processes included: the synthesis of crude silane gas, ultrapurification of the gas, and direct pyrolysis to product silicon. Features of the process provided for direct continuous operation from process feed to final product, without the requirement to store intermediates or even convert the silane to a liquid phase. Semiconductor product quality as analyzed internally was demonstrated by the first integrated operation of the plant.

Grayson, P. E.↗

NASA NTRS1977

Dendritic web silicon for solar cell application

The dendritic web process for growing long thin ribbon crystals of silicon and other semiconductors is described. Growth is initiated from a thin wirelike dendrite seed which is brought into contact with the melt surface. Initially, the seed grows laterally to form a button at the melt surface; when the seed is withdrawn, needlelike dendrites propagate from each end of the button into the melt, and the web portion of the crystal is formed by the solidification of the liquid film supported by the button and the bounding dendrites. Apparatus used for dendritic web growth, material characteristics, and the two distinctly different mechanisms involved in the growth of a single crystal are examined. The performance of solar cells fabricated from dendritic web material is indistinguishable from the performance of cells fabricated from Czochralski grown material.

Seidensticker, R. G.↗

NASA NTRS1980

Minority carrier diffusion lengths and absorption coefficients in silicon sheet material

Most of the methods which have been developed for the measurement of the minority carrier diffusion length of silicon wafers require that the material have either a Schottky or an ohmic contact. The surface photovoltage (SPV) technique is an exception. The SPV technique could, therefore, become a valuable diagnostic tool in connection with current efforts to develop low-cost processes for the production of solar cells. The technique depends on a knowledge of the optical absorption coefficient. The considered investigation is concerned with a reevaluation of the absorption coefficient as a function of silicon processing. A comparison of absorption coefficient values showed these values to be relatively consistent from sample to sample, and independent of the sample growth method.

Dumas, K. A.↗

NASA NTRS1975

Improved toughness of silicon carbide

Several techniques were employed to apply or otherwise form porous layers of various materials on the surface of hot-pressed silicon carbide ceramic. From mechanical properties measurements and studies, it was concluded that although porous layers could be applied to the silicon carbide ceramic, sufficient damage was done to the silicon carbide surface by the processing required so as to drastically reduce its mechanical strength. It was further concluded that there was little promise of success in forming an effective energy absorbing layer on the surface of already densified silicon carbide ceramic that would have the mechanical strength of the untreated or unsurfaced material. Using a process for the pressureless sintering of silicon carbide powders it was discovered that porous layers of silicon carbide could be formed on a dense, strong silicon carbide substrate in a single consolidation process.

Palm, J. A.↗

NASA NTRS1980

Silicon Research and Technology Workshop report

The materials, structures, processing, modeling and measurements of high efficiency silicon solar cells were surveyed. In the materials area, highlights included: (1) the possibility of improving cell voltages by reducing minority carrier mobilities in critical regions of the solar cells; (2) the need for and possibility of lowering the surface recombination velocity for improvement of open circuit voltage in shallow junction cells; (3) the present need for improved lifetime in high resistivity cells; and (4) the potential for new materials such as polycrystalline or dendritic web material to perform well at end of life in a radiation environment. In the area of structures, distinction was made between those for terrestrial use and those that would survive radiation environments. Areas such as epitaxial growth and laser or elctron beam annealing (and diffusion) were proposed as having certain advantages over more conventional techniques.

Meulenberg, A., Jr.↗

NASA NTRS1980

The effect of minority carrier mobility variations on the performance of high voltage silicon solar cells

A multistep diffusion processing schedule is described which allows the attainment of high open circuit voltages in 0.1 ohm/cm silicon cells. The schedule consists of a deep primary diffusion, followed by an acid etch of emmitter surface which is then followed by a shallow secondary diffusion. A correlation is made between the observed voltage increases and the time of primary diffusion. Results indicate that as the primary diffusion time increases, the voltage rises monotonically.

Weizer, V. G.↗

NASA NTRS1978

The Automated Array Assembly Task of the Low-cost Silicon Solar Array Project, Phase 2

An advanced process sequence for manufacturing high efficiency solar cells and modules in a cost-effective manner is discussed. Emphasis is on process simplicity and minimizing consumed materials. The process sequence incorporates texture etching, plasma processes for damage removal and patterning, ion implantation, low pressure silicon nitride deposition, and plated metal. A reliable module design is presented. Specific process step developments are given. A detailed cost analysis was performed to indicate future areas of fruitful cost reduction effort. Recommendations for advanced investigations are included.

Coleman, M. G.↗

NASA NTRS2004

Recent Advances in the Development of Thick-Section Melt-Infiltrated C/SiC Composites

Using a pressureless melt infiltration and in situ reaction process to form the silicon carbide (SiC) matrix, Ultramet has been developing a means to rapidly fabricate ceramic matrix composites (CMCs) targeting thicker sections. The process also employs a unique route for the application of oxide fiber interface coatings designed to protect the fiber and impart fiber-matrix debond. Working toward a 12 inch diameter, 2.5 inch thick demonstrator component, the effect of various processing parameters on room temperature flexure strength is being studied with plans for more extensive elevated temperature mechanical strength evaluation to follow this initial optimization process.

Babcock, Jason R.↗

NASA NTRS1983

Lead sulfide - Silicon MOSFET infrared focal plane development

A process for directly integrating photoconductive lead sulfide (PbS) infrared detector material with silicon MOS integrated circuits has been developed primarily for application in long (greater than 10,000 detector elements) linear arrays for pushbroom scanning applications. The processing technology is based on the conventional PMOS and CMOS technologies with a variation in the metallization. Results and measurements on a fully integrated eight-element multiplexer are shown.

Barrett, J. R.↗

NASA NTRS1986

Silicon purification using a Cu-Si alloy source

Production of 99.9999% pure silicon from 98% pure metallurgical grade (MG) silicon by a vapor transport filtration process (VTP) is described. The VTF process is a cold wall version of an HCl chemical vapor transport technique using a Si:Cu3Si alloy as the silicon source. The concentration, origin, and behavior of the various impurities involved in the process were determined by chemically analyzing alloys of different purity, the slag formed during the alloying process, and the purified silicon. Atomic absorption, emission spectrometry, inductively coupled plasma, spark source mass spectrometry, and secondary ion mass spectroscopy were used for these analyses. The influence of the Cl/H ratio and the deposition temperature on the transport rate was also investigated.

Powell, R. C.↗

NASA NTRS1977

Solar photovoltaics - An aerospace technology

Specific problems affecting the development of low-cost silicon solar array power sources are discussed, taking into account the potential of realizing less than $0.50/per peak watt of silicon solar array technology. A utilization of less expensive processes for the manufacture of pure silicon and more economical procedures of silicon crystal and wafer production appear desirable. Attention is given to a sheet growth process example and a concept of pulsed processing for automated cell production.

Goldsmith, J. V.↗

NASA NTRS1980

Phase 2 of the array automated assembly task for the low cost silicon solar array project

Studies were conducted on several fundamental aspects of electroless nickel/solder metallization for silicon solar cells. A process, which precedes the electroless nickel plating with several steps of palladium plating and heat treatment, was compared directly with single step electroless nickel plating. Work was directed toward answering specific questions concerning the effect of silicon surface oxide on nickel plating, effects of thermal stresses on the metallization, sintering of nickel plated on silicon, and effects of exposure to the plating solution on solar cell characteristics. The process was found to be extremely lengthy and cumbersome, and was also found to produce a product virtually identical to that produced by single step electroless nickel plating, as shown by adhesion tests and electrical characteristics of cells under illumination.

Petersen, R. C.↗

DOE OSTI2026

Host-Directed, Bioelectronic Immunomodulation for Protection Against Emerging Pathogens

Acute care of patients with severe infections often relies on systemic administration of pharmaceuticals and monitoring of complex physiological symptoms to identify immune system dysfunction, which can lead to increased mortality. Furthermore, determining disease-specific treatment plans often leads to a delay in patient care. To address this, we proposed an immune modulation system that electrically detects and responds to a patient’s immune system status, creating an agnostic means of treating illness and infection. Two pieces of hardware were developed for this task: a minimally-invasive sensor and a vagus nerve stimulator. Stimulation of the vagus nerve is known to modulate the immune system. The sensor is a microfabricated, silicon-based microneedle array capable of interfacing with interstitial fluid to detect small molecules such as inflammatory proteins (cytokines) and pharmaceuticals (vancomycin). Process optimization to manufacture the needles refined the silicon etch process, creating needle patches long enough to penetrate skin and reach interstitial fluid. The needles were tested for mechanical strength and stability, and did not shatter when inserted into skin models. The needles are coated with a thin film metal, turning them into electrodes for electrochemical sensing of our target molecules. We hybridized aptamers to the surface of the electrode to act as the sensing layer and were able to detect changes in the conformation of the aptamer electrochemically in the presence of the target molecule. The stimulator was a cuff electrode that encircled the vagus nerve. Rodent studies were conducted in which rodents were exposed to an inflammatory event and vagus nerve stimulation (VNS) was applied. It was demonstrated that optimized electrical stimulation of the vagus nerve created measurably different levels of cytokines in blood samples, and certain cytokines released during the inflammatory event were either upregulated or downregulated. In sum, this project successfully developed new platforms and technologies that can, with further development, enable better temporal insight into biomarker changes in the body, letting healthcare providers know of possible immune system dysfunction before they are detected physiologically. We also demonstrated the value of VNS and its possible use in treating immune system response to inflammation and illness.

59 BASIC BIOLOGICAL SCIENCES↗

NASA NTRS2005

Materials Refining for Solar Array Production on the Moon

Silicon, aluminum, and glass are the primary raw materials that will be required for production of solar arrays on the moon. A process sequence is proposed for producing these materials from lunar regolith, consisting of separating the required materials from lunar rock with fluorine. The fluorine is brought to the moon in the form of potassium fluoride, and is liberated from the salt by electrolysis in a eutectic salt melt. Tetrafluorosilane produced by this process is reduced to silicon by a plasma reduction stage; the fluorine salts are reduced to metals by reaction with metallic potassium. Fluorine is recovered from residual MgF and CaF2 by reaction with K2O.

Landis, Geoffrey A.↗