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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 559 records · Page 31
All sourcesNASA NTRSDOE OSTI
NASA NTRS1993

Strong far-infrared intersubband absorption under normal incidence in heavily n-type doped nonalloy GaSb-AlSb superlattices

We report on long-wavelength intersubband absorption under normal incidence in heavily doped binary-binary GaSb-AlSb superlattices. Due to a small energy difference between the ellipsoidal L valleys in GaSb and the low-density-of-states Gamma minimum, electrons spill over from the first Gamma subband into the higher-energy L subband in GaSb wells, where they are allowed to make an intersubband transition under normally incident radiation. A peak fractional absorption per quantum well of 6.8 x 10 exp 3 (absorption coefficient alpha of about 8500/cm) is observed at about 15 microns wavelength for a sheet concentration of 1.6 x 10 exp 12 sq cm/well.

Samoska, L. A.↗
NASA NTRS2011

Low Power Consumption Lasers for Miniature Optical Spectrometers for Trace Gas Analysis

The air quality of any manned spacecraft needs to be continuously monitored in order to safeguard the health of the crew. Air quality monitoring grows in importance as mission duration increases. Due to the small size, low power draw, and performance reliability, semiconductor laser-based instruments are viable candidates for this purpose. Achieving a minimum instrument size requires lasers with emission wavelength coinciding with the absorption of the fundamental absorption lines of the target gases, which are mostly in the 3.0-5.0 micron wavelength range. In this paper we report on our progress developing high wall plug efficiency type-I quantum-well GaSb-based diode lasers operating at room temperatures in the spectral region near 3.0-3.5 micron and quantum cascade (QC) lasers in the 4.0-5.0 micron range. These lasers will enable the development of miniature, low-power laser spectrometers for environmental monitoring of the spacecraft.

Distributed Feedback (DFB) Diode Lasers↗
NASA NTRS2010

Low Power Consumption Lasers for Next Generation Miniature Optical Spectrometers for Major Constituent and Trace Gas Analysis

The air quality of any manned spacecraft needs to be continuously monitored in order to safeguard the health of the crew. Air quality monitoring grows in importance as mission duration increases. Due to the small size, low power draw, and performance reliability, semiconductor laser-based instruments are viable candidates for this purpose. The minimum instrument size requires lasers with emission wavelength coinciding with the absorption of the fundamental frequency of the target gases which are mostly in the 3.0-5.0 micrometers wavelength range. In this paper we report on our progress developing high wall plug efficiency type-I quantum-well GaSb-based diode lasers operating at room temperatures in the spectral region near 3.0-3.5 micrometers and quantum cascade (QC) lasers in the 4.0-5.0 micrometers range. These lasers will enable the development of miniature, low-power laser spectrometers for environmental monitoring of the spacecraft.

semiconductor lasers↗
NASA NTRS2011

Low Power Consumption Laser for Next Generation Miniature Optical Spectrometers for Trace Gas Analysis

The air quality of any manned spacecraft needs to be continuously monitored in order to safeguard the health of the crew. Air quality monitoring grows in importance as mission duration increases. Due to the small size, low power draw, and performance reliability, semiconductor laser-based instruments are viable candidates for this purpose. Achieving a minimum instrument size requires lasers with emission wavelength coinciding with the absorption of the fundamental absorption lines of the target gases, which are mostly in the 3.0-5.0 mu m wavelength range. In this paper we report on our progress developing high wall plug efficiency type-I quantum-well GaSb-based diode lasers operating at room temperatures in the spectral region near 3.0-3.5 mu m and quantum cascade (QC) lasers in the 4.0-5.0 mu m range. These lasers will enable the development of miniature, low-power laser spectrometers for environmental monitoring of the spacecraft

distributed feedback laser (DFB↗
DOE OSTI2023

Large two-photon cross sections and low-threshold multiphoton lasing of CdS/CdSe/CdS quantum shells

Colloidal quantum shells are spherical semiconductor quantum wells, which have shown strong promise as optical materials, particularly in classes of experiments requiring multiple excitons. The two-photon properties of CdS/CdSe/CdS quantum shell samples are studied here to demonstrate large non-linear absorption cross-sections while retaining advantageous multiexciton physics conferred by the geometrical structure. The quantum shells have large two-phonon cross sections (0.4–7.9 × 10 6 GM), which highlights their potential use in upconversion imaging in which large per particle two-photon absorption is critical. Time-resolved measurements confirmed that the quantum shells have long biexciton lifetime (>10 ns in the largest core samples reported here) and large gain bandwidth (>300 meV). The combination of these attributes with large two-photon cross sections makes the CdS/CdSe/CdS quantum shells excellent gain media for two-photon excitation. With a broad gain bandwidth and long gain lifetime, quantum shell solids support multimodal amplified spontaneous emission from excitons, biexcitons, and higher excited states. In conclusion, thresholds for amplified spontaneous emission and lasing, which are as low as 1 mJ cm −2 , are comparable to, or lower than, the thresholds reported for other colloidal materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Solutions to Droop and the Green Gap by Novel Carrier Injection

Long-wavelength (green, yellow, red) visible light-emitting diodes (LEDs) have historically been inefficient compared to blue light-emitters in the III-nitrides. This is due to many factors, including poor material quality due to the low growth temperatures required for high Incomposition InGaN quantum wells (QWs), and the polar nature of the III-nitride crystal structure. Spontaneous and piezoelectric polarization in the III-nitrides causes enhanced quantum-confined Stark effect (QCSE), which spatially separates electrons and holes and reduces radiative recombination (ie: light output) from the devices. Polarization in the crystal also induces additional potential barriers that electrons and holes must cross over before entering the QWs where they can recombine to emit light. Both of these polarization effects worsen as emission wavelength increases, making blue III-nitride LEDs are the most efficient and red III-nitride LEDs the least efficient. The focus of this project has been solving the latter polarization-related issue through the implementation of V-defects in long wavelength LEDs. V-defects are morphological defects which are commonly observed in c-plane III-nitrides. They are observed as hexagonal pyramid-shaped depressions on the c-plane surface, with six semipolar sidewalls. They typically form at the apex of threading dislocations (TDs) under conditions of kinetically-limited growth and low growth-temperature. They were initially thought to be detrimental to LED performance and much early work focused on eliminating them entirely from III-nitride devices. However, over the past decade work has emerged that indicate that they can improve LED performance by allowing electrons and holes to bypass the polarization-induced barriers present in the c-plane and directly enter the QWs of an LED. This is due to the semipolar nature of the V-defect sidewall: these sidewalls are thin and lack the polarization-induced barriers which prevent carriers easily moving between layers. V-defects have since been determined to be an efficient avenue by which to inject electrons and holes into the c-plane QWs where they can recombine to emit light. Throughout this project we have explored lateral injection through a variety of methods: simulation (Task 2), epitaxial growth of V-defect and non-V-defect LEDs (Tasks 1, 3, 4, 5, 6), and advanced characterization methods (Task 7). All tasks have been completed. A description of each task completed follows from this section.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
NASA NTRS1985

Electron and hole impact ionization coefficients in GaAs-Al(x)Ga(1-x)As superlattices

Electron and hole multiplication and impact ionization coefficients have been measured with pure carrier injection in p(+)-n(-)-n(+) diodes grown by molecular beam epitaxy. Values of the electron and hole ionization coefficient ratio alpha/beta = 2-5 are measured for superlattices with well width Lz greater than or equal to 100 A and alpha/beta greater than 10 is measured in a graded band-gap superlattice with a total well and barrier width LB + LZ = 120 A. The ratio decreases and becomes less than unity for smaller well sizes. This is caused by an increase in beta (E) while alpha (E) remains fairly constant. The results have been interpreted by considering varying hole confinement and scattering in the coupled quantum wells.

Juang, F.-Y.↗
DOE OSTI2021

Topological Hall effect in magnetic topological insulator films

Geometric Berry phase can be induced either by spin–orbit coupling, giving rise to the anomalous Hall effect in ferromagnetic materials, or by chiral spin texture, such as skyrmions, leading to the topological Hall effect. Recent experiments have revealed that both phenomena can occur in topological insulator films with magnetic doping, thus providing us with an intriguing platform to study the interplay between these two phenomena. In this work, we report on a numerical simulation of the anomalous Hall and topological Hall effects in a four-band model that can properly describe the quantum well states in the magnetic topological insulator films by combining Landauer–Büttiker formula and the iterative Green’s function method. Our numerical results suggest that spin–orbit coupling in this model plays a different role in the quantum transport in the clean and disordered limits. In the clean limit, spin–orbit coupling mainly influences the longitudinal transport but does not have much effect on topological Hall conductance. In the disordered limit, the longitudinal transport is determined by disorder scattering and spin–orbit coupling is found to affect strongly the topological Hall conductance. Here, this sharp contrast unveils a dramatic interplay between spin–orbit coupling and disorder effect in topological Hall effect in magnetic topological insulator systems.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Electron subband degeneracy heat pump for cryogenic cooling

An unconventional method of solid-state cryogenic cooling utilizing the electron subband degeneracy of semiconductor heterostructures is discussed in this Letter. The working principle of using the electrons as the working medium to perform cyclic heat pumping under electrostatic subband "expansion" and "compression" is discussed. The calculated base temperature can reach below dilution refrigeration temperatures with the fundamental limit set by electron-phonon interaction. Using an ultra-wide GaAs quantum well as an example, the cooling power per unit volume is estimated to reach $0.85\ \rm \mu W/cm^3$ at $25\ \rm mK$ with a hot-side temperature of $42.5\ \rm mK$, suitable for applications such as quantum computing.

Wang, Chulin↗
NASA NTRS2003

Large format long-wavelength infrared narrow-band, multi-band, and broad-band QWIP focal plane arrays

A 640x512 pixel, long-wavelength cutoff, narrow-band quantum well infrared photodetector focal pllay array, a four-band QWIP FPA in 4-16 um spectral region, and a broad-band QWIP FPA having 15.4 mum cutoff have been demonstrated. In this paper we discuss the detector designs, dark currents, quantum efficiencies, responsivities, detectivities, noise equivalent differential temperatures, the effect of FPA nonuniformity on performance, and the operabilities of these QWIP FPAs.

Mumolo, J. M.↗
DOE OSTI2021

Fixed-phase diffusion Monte Carlo study of activation gap and skyrmion excitations of a ν = 1 system in the presence of charged impurities

The discrepancy between the theoretically calculated and experimentally measured activation gaps in quantum Hall effect has long been a puzzle. We revisit this issue in the context of the v = 1 quantum Hall state, while also incorporating the skyrmion physics. We find that the finite width and the Landau level mixing effects are not sufficient to explain the observed activation gap. We further show that the presence of charged impurities located adjacent to the quantum well can cause a significant reduction in the activation gap, while also causing a suppression of the skyrmion size.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

High magnetic field response of superconductivity dome in quantum artificial high−⁢𝑇 𝐶 superlattices with variable geometry

It is known that cuprate artificial high-𝑇 𝐶 superlattices (AHTS) with period 𝑑, composed of quantum wells confining interface space charge in stoichiometric Mott insulator layers (𝑆), with thickness 𝐿, at the interface with overdoped normal metallic cuprate layers (𝑁) show a superconducting dome by tuning the geometric 𝐿 over 𝑑 ratio of the SNSN superlattice with the top predicted by quantum material design engineering quantum size effects. Here we report high-field magnetotransport measurements up to 41 Tesla of AHTS across the entire superconducting dome. The results show the universal upward-concave behavior of the temperature-dependent upper critical magnetic field in low-𝑇 𝐶 samples at the rising edge and drop edge of the dome, providing strong evidence consistent with two-band superconductivity in agreement with multigap theory used for quantum design of the SNSN superlattices. The measured superconducting coherence length demonstrates that atomic-scale engineering controls not only the critical temperature but also the intrinsic pair size at Fano-Feshbach resonances physics paving the way toward next-generation quantum devices and shedding light on unconventional superconductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Metalorganic chemical vapor deposition of ZnGeN 2 films on GaN: effects of cation stoichiometry on surface morphology and crystallinity

Novel optoelectronic device designs based on the heterostructures of III-N and II-IV-N 2 are promising to advance device performance significantly. For example, by utilizing InGaN-ZnGeN 2 quantum well (QW) structures instead of pure InGaN, the band structure engineering in the QW active region can lead to improved electron-hole wavefunction overlap, and thus enhance the radiative efficiency for photon generation. These novel heterostructures have great potential to address the current challenge of low quantum efficiency in InGaN QW based light emitting diodes emitting in green and beyond. The materials development of ZnGeN 2 is still at an early stage as compared to the much matured GaN material system. In an ideal octet rule preserving ordered structure of ZnGeN 2 , every N atom is coordinated by exactly two Zn and two Ge atoms. However, local violation of octet rule can be caused by non-ideal coordination of N by the cations. The disordered structure is thermodynamically less favorable but can still be achieved, for example, in kinetics-limited growth regime. The ordered ZnGeN 2 has a bandgap very close to that of GaN (~3.4 eV) and a lattice mismatch of <0.1% with GaN. Interestingly, the valence band of ZnGeN 2 has been predicted to be ~1 eV above that of GaN, which has inspired novel designs for high efficiency light emitters. In this work, we investigated the metalorganic chemical vapor deposition (MOCVD) of ZnGeN 2 films on GaN/c-sapphire templates. Diethylzinc (DEZn), germane (GeH4) and ammonia were used as the precursors for Zn, Ge and N, respectively. A systematic study was conducted to investigate the cation stoichiometry as a function of growth temperature (TG), total reactor pressure (P) and DEZn/GeH 4 molar flow rate ratio (RII/IV). Under the investigated growth window, the Zn/(Zn+Ge) composition in the films, determined from energy dispersive X-ray spectroscopy, decreased monotonically with increase in TG but increased with increase in P and RII/IV. Atom probe tomography data did not indicate the presence of any secondary phases such as Zn 3 N 2 or Ge 3 N 4 . The surface morphology and crystallinity of the grown films had strong correlation with the Zn/(Zn+Ge) composition. The scanning electron microscopy images showed that the near-stoichiometric films have planar surfaces whereas Zn-rich films had crystallites on their surface and the Zn-poor films had faceted surface. Scanning transmission electron microscopy (STEM) imaging revealed that the Zn-rich and Zn-poor films have columnar and filament-like morphology, respectively, whereas the near-stoichiometric films have continuous film-like cross-sectional morphology. TEM nano-diffraction patterns as well as X-ray diffraction 2θ-ω scan profiles indicate that the near stoichiometric films are single crystalline. Nano-diffraction pattern of the stoichiometric films resembled that of a disordered ZnGeN 2 structure. Room temperature Raman spectra of near-stoichiometric films showed only the phonon density of states like features of a cation disordered ZnGeN 2 . Cathodoluminescence and photoluminescence spectra measured at different temperatures had similar features with peak emission wavelength at ~ 2 eV. In conclusion, the stoichiometry of ZnGeN 2 films can be widely tuned by tuning the MOCVD growth parameters. The surface morphology and the crystallinity of the films were found to have strong correlation with the Zn/(Zn+Ge) composition. The stoichiometric ZnGeN 2 films grown on GaN were demonstrated with uniform surface morphology and high crystalline quality. The results from this work will provide pathway to implement ZnGeN 2 in device structures.

Karim, Md Rezaul↗
DOE OSTI2026

Spectral and small-signal electroluminescence analysis of carrier dynamics in dual-color InGaN/GaN light-emitting diodes

Here, we study carrier transport, distribution, and recombination in dual-color c-plane InGaN/GaN LEDs using spectral analysis and small-signal electroluminescence (SSEL). The emissions from green and blue quantum wells (QWs) were experimentally separated and analyzed. Spectral analysis and SSEL independently demonstrate that emission from the green QW is dominant at low current densities, consistent with its narrower bandgap, while emission from the blue QW is more significant at higher current densities, consistent with its reduced quantum confined Stark effect and larger wavefunction overlap. In addition, we demonstrate that the carrier recombination in the QWs is non-uniform, with carrier transport dramatically affecting the carrier distribution between QWs and the recombination in a specific QW. Finally, our measurements suggest that the effective active region contributing most strongly to radiative recombination corresponds to approximately two to three QWs on the p-GaN side, indicating limited carrier transport to more distant QWs in the structures studied.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Kondo interaction of quantum spin Hall edge channels with charge puddles

Under time-reversal symmetry, quantum spin Hall edge channels are protected against elastic backscattering. However, even for samples which exhibit conductance quantization due to the quantum spin Hall effect, reproducible fluctuations shape the quantization plateau when the chemical potential is tuned through the bulk gap. Here, we examine those fluctuations in micron-sized HgTe quantum well devices. By performing temperature- and gate-dependent measurements, we conclude that “charge puddles” in the narrow-gap material have a Kondo-type interaction with the edge channels resulting in the observed conductance fluctuations. Our results provide insight into the underlying mechanisms of scattering in quantum spin Hall edge channels.

36 MATERIALS SCIENCE↗
NASA NTRS2011

The Hyperspectral Thermal Emission Spectrometer (HyTES): Preliminary Results

The Hyperspectral Thermal Emission Spectrometer (HyTES) is being developed as part of the risk reduction activities associated with the Hyperspectral Infrared Imager (HyspIRI). HyspIRI is one of the Tier 2 Decadal Survey Missions. HyTES will provide information on how to place the filters on the HyspIRI Thermal Infrared Instrument (TIR) as well as provide antecedent science data. The pushbroom design has 512 spatial pixels over a 50-degree field of view and 256 spectral channels between 7.5 micrometers to 12 micrometers. HyTES includes many key enabling state-of-the-art technologies including a high performance convex diffraction grating, a quantum well infrared photodetector (QWIP) focal plane array, and a compact Dyson-inspired optical design. The Dyson optical design allows for a very compact and optically fast system (F/1.6). It also minimizes cooling requirements due to the fact it has a single monolithic prism-like grating design which allows baffling for stray light suppression. The monolithic configuration eases mechanical tolerancing requirements which are a concern since the complete optical assembly is operated at cryogenic temperatures ((is) approximately 100K). The QWIP allows for optimum spatial and spectral uniformity and provides adequate responsivity or D-star to allow 200mK noise equivalent temperature difference (NEDT) operation across the LWIR passband. Assembly of the system is nearly complete. After completion, alignment results will be presented which show low keystone and smile distortion. This is required to minimize spatial-spectral mixing between adjacent spectral channels and spatial positions. Predictions show the system will have adequate signal to noise for laboratory calibration targets.

Moon Mineralogical Mapper (M3).↗
DOE OSTI2022

Robust Quantum Hall Ferromagnetism near a Gate-Tuned ν = 1 Landau Level Crossing

In a low-disorder two-dimensional electron system, when two Landau levels of opposite spin or pseudospin cross at the Fermi level, the dominance of the exchange energy can lead to a ferromagnetic, quantum Hall ground state whose gap is determined by the exchange energy and has skyrmions as its excitations. This is normally achieved via applying either hydrostatic pressure or uniaxial strain. Here, we study here a very high-quality, low-density, two-dimensional hole system, confined to a 30-nm-wide (001) GaAs quantum well, in which the two lowest-energy Landau levels can be gate tuned to cross at and near filling factor v = 1. As we tune the field position of the crossing from one side of v = 1 to the other by changing the hole density, the energy gap for the quantum Hall state at v =1 remains exceptionally large, and only shows a small dip near the crossing. The gap overall follows a $\sqrt{B}$ dependence, expected for the exchange energy. Our data are consistent with a robust quantum Hall ferromagnet as the ground state.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Record-quality GaAs two-dimensional hole systems

The complex band structure, large spin-orbit induced band splitting, and heavy effective mass of two-dimensional (2D) hole systems hosted in GaAs quantum wells render them rich platforms to study many-body physics and ballistic transport phenomena. Here we report ultra-high-quality (001) GaAs 2D hole systems, fabricated using molecular beam epitaxy and modulation doping, with mobility values as high as 5.8 × 10 6 cm 2 /(V s) at a hole density of p = 1.3 × 10 11 /cm 2 , implying a mean free path of ≃ 27 μm. In the low-temperature magnetoresistance trace of this sample, we observe high-order fractional quantum Hall states up to the Landau level filling ν = 12/25 near ν = 1/2. Furthermore, we see a deep minimum develop at ν = 1/5 in the magnetoresistance of a sample with a much lower hole density of p = 4.0 × 10 10 /cm 2 where we measure a mobility of 3.6 × 10 6 cm2/(V s). Finally, these improvements in sample quality were achieved by the reduction of residual impurities both in the GaAs channel and in the AlGaAs barrier material, as well as optimization in the design of the sample structure.

2-dimensional systems↗