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At least 559 records · Page 31

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NASA NTRS1984

A theoretical study of the effects of interacting grain boundaries on electron-beam-induced currents

The influence of several grain boundaries on the electron-beam-induced current in polycrystalline silicon is investigated. The simple geometry contemplated here, consisting of two plane parallel grain boundaries possessing different effective, albeit constant, surface recombination velocities, intersecting a planar junction at right angles allows for an exact solution of the corresponding boundary value problem. It is shown that if the distance between the grain boundaries w becomes less than the diffusion length for minority carriers L within the grain, the grain boundary with the smaller effective recombination velocity becomes less and less visible the smaller the ratio w/L.

Luke, K. L.↗

NASA NTRS1985

Adjustable Lid Aids Silicon-Ribbon Growth

Closely-spaced crucible cover speeds up solidification. Growth rate of dendritic-web silicon ribbon from molten silicon increased by controlling distance between crucible susceptor lid and liquid/solid interface. Lid held in relatively high position when crucible newly filled with chunks of polycrystalline silicon. As silicon melts and forms pool of liquid at lower level, lid gradually lowered.

Mchugh, J. P.↗

NASA NTRS1984

Dynamic compression and volatile release of carbonates

Particle velocity profiles upon shock compression and isentropic releases were measured for polycrystalline calcite. The Solenhofen limestone release paths lie, close to the Hugoniot. Calcite 3 to 2 transition, upon release, was observed, but rarefaction shocks were not detected. The equation of state is used to predict the fraction of material devolatilized upon isentropic release as a function of shock pressure. The effect of ambient partial pressure of CO2 on the calculations is demonstrated and considered in models of atmospheric evolution by impact induced mineral devolatilization. The radiative characteristics of shocked calcite indicate that localization of thermal energy occurs under shock compression. Shock entropy calculations result in a minimum estimate of 90% devolatilization upon complete release from 10 GPa. Isentropic release paths from calculated continuum Hugoniot temperatures cross into the CaO (solid) + CO2 (vapor) field at improbably low pressures. It is found that release paths from measured shock temperatures cross into the melt plus vapor field at pressures greater than .5 GPa, which suggests that devolatilization is initiated at the shear banding sites.

Tyburczy, J. A.↗

NASA NTRS1984

Effect of barrier height on friction behavior of the semiconductors silicon and gallium arsenide in contact with pure metals

Friction experiments were conducted for the semiconductors silicon and gallium arsenide in contact with pure metals. Polycrystalline titanium, tantalum, nickel, palladium, and platinum were made to contact a single crystal silicon (111) surface. Indium, nickel, copper, and silver were made to contact a single crystal gallium arsenide (100) surface. Sliding was conducted both in room air and in a vacuum of 10 to the minus 9th power torr. The friction of semiconductors in contact with metals depended on a Schottky barrier height formed at the metal semiconductor interface. Metals with a higher barrier height on semiconductors gave lower friction. The effect of the barrier height on friction behavior for argon sputtered cleaned surfaces in vacuum was more specific than that for the surfaces containing films in room air. With a silicon surface sliding on titanium, many silicon particles back transferred. In contrast, a large quantity of indium transferred to the gallium arsenide surface.

Mishina, H.↗

NASA NTRS1984

Silicon film solar cell process

The most promising way to reduce the cost of silicon in solar cells while still maintaining performance is to utilize thin films (10 to 20 microns thick) of crystalline silicon. The method of solution growth is being employed to grow thin polycrystalline films of silicon on dissimilar substrates. The initial results indicate that, using tin as the solvent, this growth process only requires operating temperatures in the range of 800 C to 1000 C. Growth rates in the range of 0.4 to 2.0 microns per minute and grain sizes in the range of 20 to 100 microns were achieved on both quartz and coated steel substrates. Typically, an aspect ratio of two to three between the width and the Si grain thickness is seen. Uniform coverage of Si growth on quartz over a 2.5 x 2.5 cm area was observed.

Hall, R. B.↗

NASA NTRS1984

Investigation of accelerated stress factors and failure/degradation mechanisms in terrestrial solar cells

Research on the reliability of terrestrial solar cells was performed to identify failure/degradation modes affecting solar cells and to relate these to basic physical, chemical, and metallurgical phenomena. Particular concerns addressed were the reliability attributes of individual single crystalline, polycrystalline, and amorphous thin film silicon cells. Results of subjecting different types of crystalline cells to the Clemson accelerated test schedule are given. Preliminary step stress results on one type of thin film amorphous silicon (a:Si) cell indicated that extraneous degradation modes were introduced above 140 C. Also described is development of measurement procedures which are applicable to the reliability testing of a:Si solar cells as well as an approach to achieving the necessary repeatability of fabricating a simulated a:Si reference cell from crystalline silicon photodiodes.

Lathrop, J. W.↗

NASA NTRS1984

Solid/melt interface studies of high-speed silicon sheet growth

Radial growth-rate anisotropies and limiting growth forms of point nucleated, dislocation-free silicon sheets spreading horizontally on the free surface of a silicon melt have been measured for (100), (110), (111), and (112) sheet planes. Sixteen-millimeter movie photography was used to record the growth process. Analysis of the sheet edges has lead to predicted geometries for the tip shape of unidirectional, dislocation-free, horizontally growing sheets propagating in various directions within the above-mentioned planes. Similar techniques were used to study polycrystalline sheets and dendrite propagation. For dendrites, growth rates on the order of 2.5 m/min and growth rate anisotropies on the order of 25 were measured.

Ciszek, T. F.↗

NASA NTRS1985

Constitutive Modeling of Superalloy Single Crystals and Directionally Solidified Materials

A unified viscoplastic constitutive relation based on crystallographic slip theory was developed for the deformation analysis of nickel base face centered cubic superalloy single crystals at elevated temperature. The single crystal theory is embedded in a self consistent method to derive a constitutive relation for a directionally solidified material comprised of a polycrystalline aggregate of columnar cylindrical grains. One of the crystallographic axes of the cylindrical crystals points in the columnar direction while the remaining crystallographic axes are oriented at random in the basal plane perpendicular to the columnar direction. These constitutive formulations are coded in FORTRAN for use in nonlinear finite element and boundary element programs.

Walker, K. P.↗

NASA NTRS1985

Compositional analysis of silicon

The use of surface analysis methods in the detection and evaluation of elemental and impurity species in Si is presented. Examples are provided from polycrystalline Si and high-efficiency MINP cells. Auger electron spectroscopy and secondary ion mass spectrometry are used to complement microelectrical data obtained by electron-beam induced-current measurements. A new method is discussed which utilizes the volume indexing of digital secondary ion mass spectroscopy signals, providing compositional information and impurity maps on internal materials/device interfaces.

Kazmerski, L. L.↗

NASA NTRS1984

Fracture behavior in silicon

The fracture mechanics of crystalline Si are reviewed, together with known techniques for minimizing the occurences of fracture and/or their effects. The fracture toughness (Kic) of Si varies only 10 percent from cell-to-cell and standard values have been established for different types of crystalline Si cells. A critical flaw size of 10-100 microns has been identified, and also pertains to polycrystalline materials. Chemical polishing is known to double the value of Kic, while edge rounding has no effect. Internal stresses, particularly those caused during ribbon growth, do not exceed 10 percent of Kic. External stresses are imposed by the module hardware and the ambient environment. Multiple contacts reduce the effects of cell fracture and series-parallel wiring in modules in arrays ameliorates the effects of single-cell failures. During manufacturing, maintenance of quality control and removal of sheets displaying aberrations can, depending on the costs and the implementation of the array reliability features, result in arrays delivering any desired level of reliability.

Leipold, M. H.↗

NASA NTRS1984

Deformation and erosion of f.c.c. metals and alloys under cavitation attack

Experimental investigations have been conducted to determine the early stages of cavitation attack on 6061-T6 aluminum alloy, electrolytic tough pitch copper, brass, and bronze, all having polycrystalline fcc matrices. The surface profiles and scanning electron micrographs show that the pits are initially formed at the grain boundaries, while the grain surfaces are progressively roughened by multiple slip and twinning. The initial erosion is noted to have occurred from the material in the grain boundaries, as well as by fragmentation of part of the grains. Further erosion occurred by shearing and necking of the surface undulations caused by plastic deformation. The mean penetration depth, computed on the basis of mass loss, was lowest on the bronze and greatest on the copper. Attention is given to the relation of cavitation attack to grain size, glide stress and stacking fault energy.

Rao, B. C. S.↗

NASA NTRS1985

XPS studies of water and oxygen on iron-sputtered natural ilmenite

The adsorption of D2O and O2 on polycrystalline FeTiO3 (natural ilmenite) has been studied by X-ray photoelectron spectroscopy. Oxygen was found to absorb reactively with Fe(0) on Ar(+)-sputtered surfaces at and above 150 K while D2O was found to adsorb molecularly or in ice layers below 170 K on both Ar(+) and O2(+) ion-bombarded ilmenite. The D2O desorbs at 170 K with either the formation of an OD complex or a strongly bound molecular layer of water.

Schulze, P. D.↗

NASA NTRS1985

Undercooling of molten silicon

Droplets of uncoated molten Si(0.4-0.8 mm diameter) have been undercooled 250 C. Ge droplets of similar size have been undercooled 280 C in a B2O3 flux. The observed nucleation onset temperatures of both Si and Ge droplets are at or below the predicted amorphous phase melting temperatures T(al). The solidified structures were polycrystalline. The nucleation frequency I, calculated from the Si data (20,000/cu cm s at 240 + or - 20 C undercooling), should be an upper limit of the homogeneous nucleation frequency of the crystal phase, since it has not been established that nucleation was homogeneous in these experiments. However, this limiting I for Si indicates that homogeneous nucleation of crystal would not become appreciable in laser pulsing experiments until the liquid Si is undercooled to well below T(al).

Devaud, G.↗

NASA NTRS1984

Characterization of CdS/CdTe and CdS/CuInSe2 thin film solar cells

A study on low cost polycrystalline thin film CdS/CdTe and CdS/CuInSe2 solar cells using measurements of spectral response and capacitance-voltage-frequency relationships was performed. Because of high concentrations of localized levels in the energy gap existing in materials and at interfaces, the redistribution of charge among the levels due to illumination plays an important role in the collection of light-generated current in these cells. The results illustrate some related phenomena observed in these cells.

Cheng, L. J.↗

NASA NTRS1985

The feasibility of silicon on garnet technology

The feasibility of combining silicon and magnetic bubble technologies is demonstrated. Functional MOSFETs have been fabricated on top of bubble films coated with 1-micron thick SiO2 layers. The large grain silicon necessary for these devices is obtained by laser recrystallization of polycrystalline silicon (polysilicon). The laser-recrystallization process causes changes in the magnetic properties of the bubble film; however, these changes can be reversed by subsequent thermal anneals. The required temperature treatments after laser annealing are compatible with the MOSFET fabrication process.

Rasky, P. H. L.↗

NASA NTRS1985

Photoacoustic microscopy of ceramic turbine blades

Scanning photoacoustic microscopy (SPAM) is evaluated as a nondestructive technique for the detection of both surface and subsurface flaws in polycrystalline ceramics, such as those currently under consideration for the high temperature components of small vehicular and industrial gas turbine engines; the fracture strength of these brittle materials is controlled by small, 25-200 micron flaws. Attention is given to the correlation of SPAM-detected flaws with actual, fracture-controlling flaws in ceramic turbine blades.

Khandelwal, P. K.↗

NASA NTRS1985

Experimental study of the minority-carrier transport at the polysilicon-monosilicon interface

This paper presents the results of an experimental study designed to explore both qualitatively and quantitatively the mechanism of the improved current gain in bipolar transistors with polysilicon emitter contacts. Polysilicon contacts were deposited and heat treated at different conditions. The electrical properties were measured using p-n junction test structures that are much more sensitive to the contact properties than are bipolar transistors. A simple phenomenological model was used to correlate the structural properties with electrical measurements. Possible transport mechanisms are examined and estimates are made about upper bounds on transport parameters in the principal regions of the devices. The main conclusion of this study is that the minority-carrier transport in the polycrystalline silicon is dominated by a highly disordered layer at the polysilicon-monosilicon interface characterized by very low minority-carrier mobility. The effective recombination velocity at the n(+) polysilicon-n(+) monosilicon interface was found to be a strong function of fabrication conditions. The results indicate that the recombination velocity can be much smaller than 10,000 cm/s.

Neugroschel, A.↗

NASA NTRS1986

Making Highly Pure Glass Rods

Proposed quasi-containerless method for making glass rods or fibers minimizes contact between processing equipment and product. Method allows greater range of product sizes and shapes than achieved in experiments on containerless processing. Molten zone established in polycrystalline rod. Furnace sections separated, and glass rod solidifies between them. Clamp supports solid glass as it grows in length. Pulling clamp rapidly away from melt draws glass fiber. Fiber diameter controlled by adjustment of pulling rate.

Naumann, R. J.↗