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At least 559 records · Page 31
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Defect induced d{sup 0} ferromagnetism in a ZnO grain boundary

Several experimental studies have referred to the grain boundary (GB) defect as the origin of ferromagnetism in zinc oxide (ZnO). However, the mechanism of this hypothesis has never been confirmed. Present study investigates the atomic structure and the effect of point defects in a ZnO GB using the generalized gradient approximation+U approximation. The relaxed GB possesses large periodicity and channels with 8 and 10 numbered atoms having 4 and 3 fold coordination. The Zn vacancy (V{sub Zn}) shows a tendency to be attracted to the GB, relative to the bulk-like region. Although no magnetization is obtained from point defect-free GB, V{sub Zn} induces spin polarization as large as 0.68 μ{sub B}/atom to the O sites at the GB. Ferromagnetic exchange energy >150 eV is obtained by increasing the concentration of V{sub Zn} and by the injection of holes into the system. Electronic structure analysis indicates that the spin polarization without external dopants originates from the O 2p orbitals, a common feature of d{sup 0} semiconductors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Applications of Transient Grating Spectroscopy to Radiation Materials Science

Radiation damage is an inherently multi-scale phenomenon, with much of the key material evolution occurring at the mesoscale. Current techniques for the direct interrogation of material property changes due to irradiation either function with very small volumes, such as in-situ TEM, cannot cover the full range of defect populations produced, such as in positron annihilation spectroscopy, or requires destruction of the test material, such as in standard or micromechanical testing. In addition, the ultimate quantities of interest to radiation materials scientists are the changes in key material properties with irradiation. These include stiffness, ductility, and thermal conductivity for structural materials, and optical properties such as index of refraction or changes in transmittance spectra for optically active materials. The latter of these are often correlated directly to stress- or thermally-induced changes, themselves a function of the specific defect populations responsible for their change. The rapid study of such a mesoscale phenomenon requires an inherently mesoscale technique, where multiple quantities of interest can be accurately measured in very short times. Determining the sensitivity of any technique with known certainly is of critical importance to qualifying a new technique to measure in-situ material property changes during irradiation. In this paper, we present the new applicability of an existing technique, known as transient grating (TG) spectroscopy, to rapidly and accurately study key problems in radiation materials science. Results quantifying the absolute sensitivity of the technique are presented, alongside molecular dynamics (MD) simulations of the TG spectroscopy process to gauge direct agreement between theory, simulation, and experiment. An example problem of interest is demonstrated as an illustration of what is possible, showing elastic and thermal changes in irradiated silicon carbide (SiC) films. Finally, future work to quantify the effects of experimentally-simulated radiation defects is proposed, in support of building a database to use TG spectroscopy to deconvolve irradiated material property changes in-situ in terms of the defect populations responsible for their evolution. The application of the TG spectroscopy technique to in-situ radiation materials science has the potential to answer long-standing questions in the field, relating to ion beam rastering, the onset of void swelling, and direct measurement of radiation-created point defect concentrations. Before it can do so, the technique must carefully be analyzed and tuned to increase its sensitivity, the certainty of its results, and the ability to predict radiation-induced changes by simulations must be developed. Making such measurements in-situ with the aid of predictive MD simulations has the potential to elucidate mechanisms of radiation damage accumulation, as well as more rapidly qualify radiation-resistant alloys for service in nuclear systems. Work is underway to build this database of experimentally-simulated radiation-produced defects, which will be combined and compared with actual irradiated materials for eventual in-situ deconvolution of the TG signal into the defect populations responsible for irradiation-induced microstructural change. (authors)

36 MATERIALS SCIENCE↗
DOE OSTI2013

High-field critical current enhancement by irradiation induced correlated and random defects in (Ba{sub 0.6}K{sub 0.4})Fe{sub 2}As{sub 2}

Mixed pinning landscapes in superconductors are emerging as an effective strategy to achieve high critical currents in high, applied magnetic fields. Here, we use heavy-ion and proton irradiation to create correlated and point defects to explore the vortex pinning behavior of each and combined constituent defects in the iron-based superconductor Ba{sub 0.6}K{sub 0.4}Fe{sub 2}As{sub 2} and find that the pinning mechanisms are non-additive. The major effect of p-irradiation in mixed pinning landscapes is the generation of field-independent critical currents in very high fields. At 7 T ‖ c and 5 K, the critical current density exceeds 5 MA/cm{sup 2}.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Quasi-continuum photoluminescence: Unusual broad spectral and temporal characteristics found in defective surfaces of silica and other materials

We previously reported a novel photoluminescence (PL) with a distribution of fast decay times in fused silica surface flaws that is correlated with damage propensity by high fluence lasers. The source of the PL was not attributable to any known silica point defect. Due to its broad spectral and temporal features, we here give this PL the name quasi-continuum PL (QC-PL) and describe the features of QC-PL in more detail. The primary features of QC-PL include broad excitation and emission spectra, a broad distribution of PL lifetimes from 20 ps to 5 ns, continuous shifts in PL lifetime distributions with respect to emission wavelength, and a propensity to photo-bleach and photo-brighten. We found similar PL characteristics in surface flaws of other optical materials, including CaF{sub 2}, DKDP, and quartz. Based on the commonality of the features in different optical materials and the proximity of QC-PL to surfaces, we suggest that these properties arise from interactions associated with high densities of defects, rather than a distribution over a large number of types of defects and is likely found in a wide variety of structures from nano-scale composites to bulk structures as well as in both broad and narrow band materials from dielectrics to semiconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Thermal conductivity changes upon neutron transmutation of {sup 10}B doped diamond

{sup 10}B doped p-type diamond samples were subjected to neutron transmutation reaction using thermal neutron flux of 0.9 × 10{sup 13} cm{sup −2} s{sup −1} and fast neutron flux of 0.09 × 10{sup 13} cm{sup −2} s{sup −1}. Another sample of epilayer grown on type IIa (110) single crystal diamond substrate was subjected to equal thermal and fast neutron flux of 10{sup 14} cm{sup −2} s{sup −1}. The defects in the diamond samples were previously characterized by different methods. In the present work, thermal conductivity of these diamond samples was determined at room temperature by transient thermoreflectance method. The thermal conductivity change in the samples as a function of neutron fluence is explained by the phonon scattering from the point defects and disordered regions. The thermal conductivity of the diamond samples decreased more rapidly initially and less rapidly for larger neutron fluence. In addition, the thermal conductivity in type IIb diamond decreased less rapidly with thermal neutron fluence compared to the decrease in type IIa diamond subjected to fast neutron fluence. It is concluded that the rate of production of defects during transmutation reaction is slower when thermal neutrons are used. The thermal conductivity of epilayer of diamond subjected to high thermal and fast neutron fluence is associated with the covalent carbon network in the composite structure consisting of disordered carbon and sp{sup 2} bonded nanocrystalline regions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Multiscale real-space quantum-mechanical tight-binding calculations of electronic structure in crystals with defects using perfectly matched layers

Graphical abstract: - Abstract: We consider the scattering of incident plane-wave electrons from a defect in a crystal modeled by the time-harmonic Schrödinger equation. While the defect potential is localized, the far-field potential is periodic, unlike standard free-space scattering problems. Previous work on the Schrödinger equation has been almost entirely in free-space conditions; a few works on crystals have been in one-dimension. We construct absorbing boundary conditions for this problem using perfectly matched layers in a tight-binding formulation. Using the example of a point defect in graphene, we examine the efficiency and convergence of the proposed absorbing boundary condition.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Effect of charge trapping on effective carrier lifetime in compound semiconductors: High resistivity CdZnTe

The dominant problem limiting the energy resolution of compound semiconductor based radiation detectors is the trapping of charge carriers. The charge trapping affects energy resolution through the carrier lifetime more than through the mobility. Conventionally, the effective carrier lifetime is determined using a 2-step process based on measurement of the mobility-lifetime product (μτ) and determining drift mobility using time-of-flight measurements. This approach requires fabrication of contacts on the sample. A new RF-based pulse rise-time method, which replaces this 2-step process with a single non-contact direct measurement, is discussed. The application of the RF method is illustrated with high-resistivity detector-grade CdZnTe crystals. The carrier lifetime in the measured CdZnTe, depending on the quality of the crystals, was between about 5 μs and 8 μs. These values are in good agreement with the results obtained using conventional 2-step approach. While the effective carrier lifetime determined from the initial portion of the photoresponse transient combines both recombination and trapping in a manner similar to the conventional 2-step approach, both the conventional and the non-contact RF methods offer only indirect evaluation of the effect of charge trapping in the semiconductors used in radiation detectors. Since degradation of detector resolution is associated not with trapping but essentially with detrapping of carriers, and, in particular, detrapping of holes in n-type semiconductors, it is concluded that evaluation of recombination and detrapping during photoresponse decay is better suited for evaluation of compound semiconductors used in radiation detectors. Furthermore, based on previously reported data, it is concluded that photoresponse decay in high resistivity CdZnTe at room temperature is dominated by detrapping of carriers from the states associated with one type of point defect and by recombination of carriers at one type of extended defects. The recombination at the extended defects produces long, logarithmic decay limiting substantially performance of CdZnTe detectors. This decay is associated with the “electrostatic trapping” of excess holes by the Schottky-type depletion space-charge regions formed around the defects.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2018

Moss-Burstein effect in stable, cubic ZrO2: Eu+3 nanophosphors derived from rapid microwave-assisted solution-combustion technique

Highlights: • A rapid and single step approach for the synthesis of Eu{sup +3} doped ZrO{sub 2} nanoparticles. • As formed ZrO{sub 2}: Eu{sup +3} nanoparticles are in cubic phase. • The measured particle size from TEM for as formed sample is found to be 45 nm. • The ZrO{sub 2}: Eu{sup +3} nanoparticles gives emission in the red region. - Abstract: A single step, rapid (2 : Eu{sup +3}nanophosphors. The high temperature cubic ZrO{sub 2} phase is obtained directly using L-serine amino acid as the fuel. The phase is stable, and shows no transformation on calcination (upto 800 °C, 2 h). The method presented here results in a final product with low concentrations of unintentional impurities (carbon 3+ is present in the lattice in concentrations as high as 2.5 mol%. The effect of calcination temperature (400, 600 and 800 °C) on optical and luminescent properties is investigated. Interestingly calcination of this material results in an increase in optical band gap (ΔEg = 0.12 eV), strongly suggesting defect-induced Moss-Burstein (M-B) effect in as-synthesized sample. It is noteworthy that, this is the first report demonstrating defect induced M-B effect in microwave derived ZrO{sub 2}. Using photoluminescence spectra based asymmetric ratio based analysis, it is observed that the increase in symmetry around the Eu{sup 3+} ion is concomitant with the increase in overall point-defect density (which in turn results in M-B effect). There is an increase in PL intensity with calcination, which is attributed to increased crystallinity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Atomistic force field for alumina fit to density functional theory

We present a force field for bulk alumina (Al{sub 2}O{sub 3}), which has been parametrized by fitting the energies, forces, and stresses of a large database of reference configurations to those calculated with density functional theory (DFT). We use a functional form that is simpler and computationally more efficient than some existing models of alumina parametrized by a similar technique. Nevertheless, we demonstrate an accuracy of our potential that is comparable to those existing models and to DFT. We present calculations of crystal structures and energies, elastic constants, phonon spectra, thermal expansion, and point defect formation energies.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

A possible new origin of long absorption tail in Nd-doped yttrium aluminum garnet induced by 15 MeV gold-ion irradiation and heat treatment

When ion irradiation introduces point-defects in semiconductors/insulators, discrete energy levels can be introduced in the bandgap, and then optical transitions whose energies are lower than the bandgap become possible. The electronic transitions between the discrete level and the continuous host band are observed as a continuous tail starting from the fundamental edge. This is the well-known mechanism of the absorption tail close to the band-edge observed in many semiconductors/insulators. In this paper, we propose another mechanism for the absorption tail, which is probably active in Nd-doped yttrium aluminum garnet (Nd:YAG) after ion irradiation and annealing. A Nd:YAG bulk crystal was irradiated with 15 MeV Au{sup 5+} ions to a fluence of 8 × 10{sup 14} ions/cm{sup 2}. The irradiation generates an amorphous layer of ∼3 μm thick with refractive index reduction of Δn = −0.03. Thermal annealing at 1000 °C induces recrystallization to randomly aligned small crystalline grains. Simultaneously, an extraordinarily long absorption tail appeared in the optical spectrum covering from 0.24 to ∼2 μm without fringes. The origin of the tail is discussed based on two models: (i) conventional electronic transitions between defect levels and YAG host band and (ii) enhanced light scattering by randomly aligned small grains.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Effect of an increase in the density of collision cascades on the efficiency of the generation of primary displacements during the ion bombardment of Si

The depth distributions of structural damage induced in Si at room temperature by the implantation of P and PF{sub 4} with energies from 0.6 to 3.2 keV/amu are experimentally studied in a wide range of doses. It is found that, in all cases, the implantation of molecular PF{sub 4} ions forms practically single-mode defect distributions, with maximum at the target surface. This effect is caused by an increase in the generation of primary defects at the surface of the target. Individual cascades formed by atoms comprising molecule effectively overlap in the surface vicinity; this overlap gives rise to nonlinear processes in combined cascades due to a high density of displacements in such cascades. Quantitative estimation of increase of effectiveness of point defect generation by PF{sub 4} ions in respect to P ions is done on the base of experimental data.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Evolution of irradiation-induced strain in an equiatomic NiFe alloy

Here, we investigate the formation and accumulation of irradiation-induced atomic strain in an equiatomic NiFe concentrated solid-solution alloy using both atomistic simulations and x-ray diffraction (XRD) analysis of irradiated samples. Experimentally, the irradiations are performed using 1.5 MeV Ni ions to fluences ranging from 1 × 10 13 to 1 × 10 14 cm -2 . The irradiation simulations are carried out by overlapping 5 keV Ni recoils cascades up to a total of 300 recoils. An increase of volumetric strain is observed at low dose, which is associated with production of point defects and small clusters. A relaxation of strain occurs at higher doses, when large defect clusters, like dislocation loops, dominate.

36 MATERIALS SCIENCE↗
DOE OSTI2014

WE-E-18A-01: Large Area Avalanche Amorphous Selenium Sensors for Low Dose X-Ray Imaging

Purpose: A large area indirect flat panel imager (FPI) with avalanche gain is being developed to achieve x-ray quantum noise limited low dose imaging. It uses a thin optical sensing layer of amorphous selenium (a-Se), known as High-Gain Avalanche Rushing Photoconductor (HARP), to detect optical photons generated from a high resolution x-ray scintillator. We will report initial results in the fabrication of a solid-state HARP structure suitable for a large area FPI. Our objective is to establish the blocking layer structures and defect suppression mechanisms that provide stable and uniform avalanche gain. Methods: Samples were fabricated as follows: (1) ITO signal electrode. (2) Electron blocking layer. (3) A 15 micron layer of intrinsic a-Se. (4) Transparent hole blocking layer. (5) Multiple semitransparent bias electrodes to investigate avalanche gain uniformity over a large area. The sample was exposed to 50ps optical excitation pulses through the bias electrode. Transient time of flight (TOF) and integrated charge was measured. A charge transport simulation was developed to investigate the effects of varying blocking layer charge carrier mobility on defect suppression, avalanche gain and temporal performance. Results: Avalanche gain of ∼200 was achieved experimentally with our multi-layer HARP samples. Simulations using the experimental sensor structure produced the same magnitude of gain as a function of electric field. The simulation predicted that the high dark current at a point defect can be reduced by two orders of magnitude by blocking layer optimization which can prevent irreversible damage while normal operation remained unaffected. Conclusion: We presented the first solid state HARP structure directly scalable to a large area FPI. We have shown reproducible and uniform avalanche gain of 200. By reducing mobility of the blocking layers we can suppress defects and maintain stable avalanche. Future work will optimize the blocking layers to prevent lag and ghosting.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

Study of optical Laue diffraction

We present the study of the optical diffraction pattern of one and two-dimensional gratings with defects, designed using desktop pc and printed on OHP sheet using laser printer. Gratings so prepared, using novel low cost technique provides good visual aid in teaching. Diffraction pattern of the monochromatic light (632.8nm) from the grating so designed is similar to that of x-ray diffraction pattern of crystal lattice with point defects in one and two-dimensions. Here both optical and x-ray diffractions are Fraunhofer. The information about the crystalline lattice structure and the defect size can be known.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Substitution defect enhancing thermoelectric properties in CuInTe2

Highlights: • Pure phase of Cu1-xAgxInTe2 solid solutions is synthesized successfully via solid state reaction. • Solid solution is an effective way to lower lattice thermal conductivity. • A zT larger than 1.0 is obtained in CuInTe2 based compounds. - Abstract: Solid solution is an effective way to optimize thermoelectric performance because of the enhanced phonon scattering from point defect. In this article we describe the synthesis and discuss thermoelectric properties of Cu{sub 1-x}Ag{sub x}InTe{sub 2} solid solutions (x = 0, 0.05, 0.15, 0.30, 0.50). The effect of the substitution of Ag for Cu site on the microstructure and thermoelectric performance in CuInTe{sub 2} is investigated. The enlarged Seebeck coefficient coupled with reduced electrical conductivity is observed due to the diminished carrier concentration upon Ag substitution. Meanwhile, the lattice thermal conductivity is significantly depressed in solid solutions due to the strong phonon scattering. As a result, a zT value of 1.07 is achieved at 823 K with x = 0.05, which is a 90% improvement as compared with that of the pristine CuInTe{sub 2}. These results demonstrate a valid approach to improve the thermoelectric properties of the compounds in the same family.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Importance of finite-size corrections for accurate ab initio modeling of carrier capture at semiconductor defects: A case study of substitutional C N in GaN

In ab initio studies of carrier-capture processes in defective semiconductor materials, the single-effective-mode formalism and the static-coupling approximation have become the predominant theoretical approaches for determining carrier-capture coefficients. The single-mode formalism relies on accurate nonequilibrium defect energies obtained from density-functional theory (DFT), where required inputs are a series of configurationally displaced, defect-containing supercells obtained using an interpolative ansatz, and where the DFT outputs are corresponding total energies that have traditionally been postprocessed using a long-established ground-state formulation of finite-size corrections and defect-formation energies. This formulation remains commonly used even though the defects that form a configuration-coordinate (CC) diagram typically exist as structures that are displaced from the ground state. To remedy this inconsistency, Kumagai has recently proposed novel methods for implementing finite-size corrections specifically intended for DFT calculations of the defect energies used to construct CC diagrams and implement the single-mode formalism [Y. Kumagai, Phys. Rev. B 107, L220101 (2023)]. Kumagai's approach builds on the latest finite-size-correction methods introduced to describe vertical charge-state transitions for charge-localizing point defects in semiconductors and insulators [T. Gake et al., Phys. Rev. B 101, 020102 (2020); S. Falletta et al., Phys. Rev. B 102, 041115 (2020)]. The newly identified finite-size artifact treated in these studies is the polarization charge induced on a configurationally frozen defect and its subsequent interaction with a vertical transition in charge state. In this work, we evaluate Kumagai's proposed methodology by applying it in a high-precision DFT study of carrier capture by substitutional C N in GaN, a well-characterized and technologically relevant defect and material. We have rigorously calculated C N defect energies across various supercell sizes for each defect configuration and charge state on the hole-capture CC diagram of C N (𝑞=−1), enabling a direct comparison of the slopes of the defect energies versus inverse cell size with those predicted by Kumagai. The most consequential prediction of Kumagai's method is that these slopes distinctly vary as the square of the linear-interpolation parameter used to construct the nonequilibrium defect configurations. Our results quantitatively support this prediction. Moreover, with these new finite-size corrections and multiple-cell-size DFT calculations in place, we find that the classical energy barrier for hole capture by C N (𝑞=−1) in GaN decreases to 0.092–0.127 eV. This finding confirms the recent ≈ 0.1 eV prediction of Reshchikov based on the weak temperature dependence for hole capture observed in photoluminescence experiments [M. A. Reshchikov, J. Appl. Phys. 129, 121101 (2021)]. These results stand in stark contrast to previously calculated barriers of 0.486 and 0.73 eV, which also used the single-mode formalism but were obtained by instead using ground-state-based finite-size corrections. Our reduced classical barrier for capture increases the temperature-dependent hole-capture coefficient of a C N (𝑞=−1) defect by more than two to four orders of magnitude for temperatures of 100–600 K, compared to the previous 0.486 eV results. While other defects may not be as dramatically affected as here, we suggest that incorporating proper finite-size corrections for the vertical-transition-like states embedded within CC diagrams is an essential, yet previously unrecognized, component of accurate modeling of carrier-capture when using the single-effective-mode formalism.

dielectric properties↗
DOE OSTI2016

Effects of high-dose hydrogen implantation on defect formation and dopant diffusion in silver implanted ZnO crystals

This work reports on the effects of a deep high-dose hydrogen ion implant on damage accumulation, defect retention, and silver diffusion in silver implanted ZnO crystals. Single-crystal ZnO samples were implanted with Ag ions in a region ∼150 nm within the surface, and some of these samples were additionally implanted with hydrogen ions to a dose of 2 × 10{sup 16 }cm{sup −2}, close to the depth ∼250 nm. Rutherford backscattering/ion channeling measurements show that crystal damage caused by Ag ion implantation and the amount of defects retained in the near surface region following post-implantation annealing were found to diminish in the case with the H implantation. On the other hand, the additional H ion implantation resulted in a reduction of substitutional Ag atoms upon post-implantation annealing. Furthermore, the presence of H also modified the diffusion properties of Ag atoms in ZnO. We discuss these findings in the context of the effects of nano-cavities on formation and annihilation of point defects as well as on impurity diffusion and trapping in ZnO crystals.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2026

Monte Carlo Simulations of Crystal Defects in Open Ensembles

Zero- and two-dimensional crystal defects form in open statistical ensembles, such as the grand canonical, that are usually inaccessible with conventional simulation techniques. This longstanding challenge is overcome with a new Hamiltonian Monte Carlo method that samples energy-biased gradual transformations. In conclusion, the method enables free energy calculations for nonideal point defects and the direct prediction of finite-temperature interface structures.

Grain boundaries↗