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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 559 records · Page 31
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Charge transfer states impact the triplet pair dynamics of singlet fission polymers

Polymers are desirable optoelectronic materials, stemming from their solution processability, tunable electronic properties, and large absorption coefficients. An exciting development is the recent discovery that singlet fission (SF), the conversion of a singlet exciton to a pair of triplet states, can occur along the backbone of an individual conjugated polymer chain. Here, compared to other intramolecular SF compounds, the nature of the triplet pair state in SF polymers remains poorly understood, hampering the development of new materials with optimized excited state dynamics.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
NASA NTRS1992

Characterization of quasi-optical filters with picosecond transient radiation

The broadband microwave transmission properties of quasi-optical components are characterized with optoelectronically generated, picosecond transient radiation. The polarization sensitivity of a lithographically fabricated wire grating, from 15-140 GHz, is presented. The complex transmission functions of two different uniform arrays of cross dipoles are measured and compared with theoretical predictions.

Arjavalingam, G.↗
DOE OSTI2024

Giant Apparent Optical Circular Dichroism in Thin Films of Bismuth-Based Hybrid Organic-Inorganic Metal Halide Semiconductor Through Preferred Orientation

Introducing chirality into organic/inorganic hybrid materials can impart chiroptical properties such as circular dichroism. The ability to tune chiroptical properties in self-assembled materials can have important implications for spintronic and optoelectronic applications. Here, a chiral organic cation, (R/S)-4-methoxy-a-methylbenzylammonium, is incorporated to synthesize the bismuth-based hybrid organic-inorganic metal halide semiconductor, (R/S-MeOMePMA)BiI4. Thin films of this Bi-based compound demonstrate large chiroptical responses, with circular dichroism anisotropy (gCD) values up to ˜0.1, close to the highest value observed in another chiral metal-halide semiconductor, (R-MBA2CuCl4). Detailed investigation reveals that this large gCD in (R/S-MeOMePMA)BiI4 is caused by the apparent CD effect. Careful selection of deposition conditions and the concomitant thin-film orientation enables the control of gCD, with maximum value observed when its thin film has a well-crystallized preferred (001) orientation parallel to the substrate. The results support a growing body of evidence that low symmetry plays an important role in achieving unusually large gCD in these chiral metal-halide materials and provides design rules for achieving large chiroptical response via morphology control.

chiroptic response↗
DOE OSTI2021

Orientation-Controlled Large-Area Epitaxial PbI 2 Thin Films with Tunable Optical Properties

Lead iodide (PbI 2 ) as a layered material has emerged as an excellent candidate for optoelectronics in the visible and ultraviolet regime. Micrometer-sized flakes synthesized by mechanical exfoliation from bulk crystals or by physical vapor deposition have shown a plethora of applications from low-threshold lasing at room temperature to high-performance photodetectors with large responsivity and faster response. However, large-area centimeter-sized growth of epitaxial thin films of PbI 2 with well-controlled orientation has been challenging. Additionally, the nature of grain boundaries in epitaxial thin films of PbI 2 remains elusive. Here, we use mica as a model substrate to unravel the growth mechanism of large-area epitaxial PbI 2 thin films. The partial growth leading to uncoalesced domains reveals the existence of inversion domain boundaries in epitaxial PbI 2 thin films on mica. Combining the experimental results with first-principles calculations, we also develop an understanding of the thermodynamic and kinetic factors that govern the growth mechanism, which paves the way for the synthesis of high-quality large-area PbI 2 on other substrates and heterostructures of PbI 2 on single-crystalline graphene. Here, the ability to reproducibly synthesize high-quality large-area thin films with precise control over orientation and tunable optical properties could open up unique and hitherto unavailable opportunities for the use of PbI 2 and its heterostructures in optoelectronics, twistronics, substrate engineering, and strain engineering.

2D materials↗
DOE OSTI2020

Impact of raw material surface oxide removal on dual band infrared optical properties of As 2 Se 3 chalcogenide glass

The manufacturing of low loss chalcogenide glasses (ChGs) for optoelectronic applications is ultimately defined by the concentration of impurities present in starting materials or imparted via processing. We describe a rapid method for purifying metallic starting materials in As 2 Se 3 glass where oxide reduction is correlated to optical and physical properties. Specifically, As-O reduction enhances the glass’ dual-band optical transparency proportional to the extent (13-fold reduction) of oxide reduction, and is accompanied by a change in density and hardness associated with changes in matrix bonding. A significant modification of the glass’ index and LWIR Abbe number is reported highlighting the significant impact purification has on material dispersion control required in optical designs.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Screw-Dislocation-Driven Growth of 2D Perovskite Spiral Microplates

Two-dimensional (2D) organic–inorganic halide perovskites are solution-processable semiconductors that are promising for optoelectronic applications. Understanding crystallization mechanisms to achieve control over nanostructures is important for optimizing desired properties. Here we introduce a versatile strategy to synthesize spiral microplates of diverse 2D perovskites at the air–water interface through screw-dislocation-driven growth. Spirals of 11 2D perovskite compositions (LA) 2 (A) n−1 Pb n X 3n+1 with different spacer (LA) cations, A-cations, halide (X) anions, and n-number can be grown. They typically consist of single- or few-layer perovskite step heights but exhibit stacking complexity when multiple dislocations interact. The spiral microplates exhibit the characteristic optical properties (photoluminescence and second-harmonic generation) of the underlying 2D perovskites. Fluorescence-detected circular dichroism imaging shows that the chirality of the spiral center does not translate to the observed chiroptical properties of the microplate, consistent with the length scale of the chiral distortion. Furthermore, this solution growth of perovskite spirals diversifies the perovskite microstructures for optoelectronics and other applications.

2D halide perovskites↗
DOE OSTI2020

Band alignments and polarization properties of the Zn-IV-nitrides

Zn-IV-nitrides have a range of potential applications in electronic and optoelectronic devices and can be integrated with currently used III-nitride semiconductors and their alloys. Using hybrid density functional theory, we examine band gaps, band offsets, and polarization properties of the Zn-IV-nitrides and the ramifications of these properties on heterointerfaces formed between the Zn-IV-nitrides and III-nitrides. Here, we find a type-II band alignment between ZnGeN 2 and GaN, where the valence band of GaN is 0.28 eV above the valence band of ZnGeN 2 . Heterostructures between Zn-IV-nitrides and III-nitrides result in interface charges that allow for novel heterostructures and increased control over polarization fields. We find that an interface between In x Ga 1-x N and ZnGeN 2 can lead to zero interfacial polarization charge; however, the band alignments are unfavorable for carrier confinement in light-emitting devices. At the interface between AlN and ZnSiN 2 , we predict a large two-dimensional electron gas to form, confined to the ZnSiN 2 layer.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Geometrically Tunable Beamed Light Emission from a Quantum‐Dot Ensemble Near a Gradient Metasurface

Abstract Optical metasurfaces have been widely investigated in recent years as a means to tailor the wavefronts of externally incident light for passive device applications. At the same time, their use in active optoelectronic devices such as light emitters is far less established. This work explores their ability to control the radiation properties of a nearby continuous ensemble of randomly oriented incoherent dipole sources via near‐field interactions. Specifically, a film of colloidal quantum dots is deposited on a plasmonic metasurface consisting of a 1D array of metallic nanoantennas on a metal film. The array is designed to introduce a linear phase profile upon reflection, and a bi‐periodic nanoparticle arrangement is introduced to ensure adequate sampling of the desired phase gradient. Highly directional radiation patterns are correspondingly obtained from the quantum dots at an enhanced emission rate. The underlying radiation mechanism involves the near‐field excitation of surface plasmon polaritons at the metal film, and their selective diffractive scattering by the metasurface into well‐collimated beams along predetermined geometrically tunable directions. These results underscore the distinctive ability of metasurfaces to control radiation properties directly at the source level, which is technologically significant for the continued miniaturization and large‐scale integration of optoelectronic devices.

Wang, Xiaowei↗
DOE OSTI2020

Deciphering the effect of traps on electronic charge transport properties of methylammonium lead tribromide perovskite

Halide perovskites have undergone remarkable developments as highly efficient optoelectronic materials for a variety of applications. Several studies indicated the critical role of defects on the performance of perovskite devices. However, the parameters of defects and their interplay with free charge carriers remain unclear. In this study, we explored the dynamics of free holes in methylammonium lead tribromide (MAPbBr 3 ) single crystals using the time-of-flight (ToF) current spectroscopy. By combining ToF spectroscopy and Monte Carlo simulation, three energy states were detected in the bandgap of MAPbBr 3 . In addition, we found the trapping and detrapping rates of free holes ranging from a few microseconds to hundreds of microseconds. Contrary to previous studies, we revealed a strong detrapping activity of traps. We showed that these traps substantially affect the transport properties of MAPbBr 3 , including mobility and mobility-lifetime product. Our results provide an insight on charge transport properties of perovskite semiconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Persistent hot carrier diffusion in boron arsenide single crystals imaged by ultrafast electron microscopy

Cubic boron arsenide (BAs) is promising for microelectronics thermal management because of its high thermal conductivity. Recently, its potential as an optoelectronic material is also being explored. However, it remains challenging to measure its photocarrier transport properties because of small sizes of available high-quality crystals. Here, we use scanning ultrafast electron microscopy (SUEM) to directly visualize the diffusion of photocarriers in BAs single crystals. Surprisingly, we observed ambipolar diffusion at low optical fluence with persistent hot carrier dynamics for above 200 ps, which can likely be attributed to the large frequency gap between acoustic and optical phonons, the same feature that is responsible for the high thermal conductivity. At higher optical fluence, we observed spontaneous electron-hole separation. Our results show BAs is an attractive optoelectronic material combining high thermal conductivity and excellent photocarrier transport properties. Finally, our study also demonstrates the capability of SUEM to probe photocarrier transport in emerging materials.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Bismuth in Lead–Tin Alloy Perovskites: Effect on Material Properties and Photovoltaic Device Performance

Metal halide perovskites (MHPs) have a strong potential for optoelectronic applications, especially photovoltaics. A significant advantage offered by MHPs is their bandgap tunability via chemical substitution and alloying, with lead–tin alloys producing the narrowest reported bandgaps of ~1.2 eV. Efforts to further narrow the bandgap of MHPs by alloying in other elements, such as bismuth, have largely been unsuccessful due to the introduction of defective electronic states, which severely diminish electronic quality. Here, in this study, we examine the effects of bismuth on a lead–tin alloyed MHP, motivated by the narrow bandgap of alloyed lead–tin MHPs. We find that the defect screening observed in lead–tin MHPs is not sufficient to screen the defect level introduced by bismuth, as evidenced by quenched photoluminescence, decreased mobility, and severely reduced performance in a photovoltaic device. Density functional theory calculations suggest that midgap states are introduced by bismuth addition over a range of chemical and compositional conditions. We further observe through wavelength-dependent photoconductivity that free carriers are generated out to ~0.9 eV in bismuth-containing samples, which could be of potential interest for NIR photodetection.

14 SOLAR ENERGY↗
DOE OSTI2020

Aging of Self-Assembled Lead Halide Perovskite Nanocrystal Superlattices: Effects on Photoluminescence and Energy Transfer

Excitonic coupling, electronic coupling, and cooperative interactions in self-assembled lead halide perovskite nanocrystals were reported to give rise to a red-shifted collective emission peak with accelerated dynamics. Here we report that similar spectroscopic features could appear as a result of the nanocrystal reactivity within the self-assembled superlattices. This is demonstrated by studying CsPbBr 3 nanocrystal superlattices over time with room-temperature and cryogenic micro-photoluminescence spectroscopy, X-ray diffraction, and electron microscopy. It is shown that a gradual contraction of the superlattices and subsequent coalescence of the nanocrystals occurs over several days of keeping such structures under vacuum. As a result, a narrow, low-energy emission peak is observed at 4 K with a concomitant shortening of the photoluminescence lifetime due to the energy transfer between nanocrystals. When exposed to air, self-assembled CsPbBr 3 nanocrystals develop bulk-like CsPbBr 3 particles on top of the superlattices. At 4 K, these particles produce a distribution of narrow, low-energy emission peaks with short lifetimes and excitation fluence-dependent, oscillatory decays. Overall, the aging of CsPbBr 3 nanocrystal assemblies dramatically alters their emission properties and that should not be overlooked when studying collective optoelectronic phenomena nor confused with superfluorescence effects.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Assessment of wafer scale MoS 2 atomic layers grown by metal–organic chemical vapor deposition using organo-metal, organo-sulfide, and H 2 S precursors

Transition Metal Dichalcogenides (TMDs) are a unique class of materials that exhibit attractive electrical and optical properties which have generated significant interest for applications in microelectronics, optoelectronics, energy storage, and sensing. Considering the potential of these materials to impact such applications, it is crucial to develop a reliable and scalable synthesis process that is compatible with modern industrial manufacturing methods. Metal–organic chemical vapor deposition (MOCVD) offers an ideal solution to produce TMDs, due to its compatibility with large-scale production, precise layer control, and high material purity. Optimization of MOCVD protocols is necessary for effective TMD synthesis and integration into mainstream technologies. Additionally, improvements in metrology are necessary to measure the quality of the fabricated samples more accurately. In this work, we study MOCVD of wafer-scale molybdenum disulfide (MoS 2 ) utilizing two common chalcogen precursors, H 2 S and DTBS. We then develop a metrology platform for wafer scale samples quality assessment. For this, the coalesced films were characterized using Raman spectroscopy, atomic force microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, and Kelvin probe force microscopy. We then correlate the structural analysis of these grown films with electrical performance by using aerosol jet printing to fabricate van der Pauw test structures and assess sheet resistance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Heterovalent semiconductor structures and devices grown by molecular beam epitaxy

Heterovalent structures consisting of group II-VI/group III-V compound semiconductors offer attractive properties, such as a very broad range of bandgaps, large conduction band offsets, high electron and hole mobilities, and quantum-material properties such as electric-field-induced topological insulator states. These properties and characteristics are highly desirable for many electronic and optoelectronic devices as well as potential condensed-matter quantum-physics applications. Here, we provide an overview of our recent studies of the MBE growth and characterization of zincblende II-VI/III-V heterostructures as well as several novel device applications based on different sets of these materials. By combining materials with small lattice mismatch, such as ZnTe/GaSb (Δa/a~0.13%), CdTe/InSb (Δa/a~0.05%), and ZnSe/GaAs (Δa/a~0.26%), epitaxial films of excellent crystallinity were grown once the growth conditions had been optimized. Cross-sectional observations using conventional and atomic-resolution electron microscopy revealed coherent interfaces and close to defect-free heterostructures. Measurements across CdTe/InSb interfaces indicated a limited amount (~1.5 nm) of chemical intermixing. Results for ZnTe/GaSb distributed Bragg reflectors, CdTe/Mg x Cd 1-x Te double heterostructures, and CdTe/InSb two-color photodetectors are briefly presented, and the growth of a rock salt/zincblende PbTe/CdTe/InSb heterostructure is also described.

Materials Science↗
DOE OSTI2023

Fundamental studies of thermal and electrical transport in microporous metal-organic frameworks

In this work, we established porous metal-organic frameworks (MOFs) as designer conductors of electrons and ions relevant to fundamental research and technological applications. MOFs are porous, crystalline materials composed of organic linkers and inorganic nodes. While most MOFs are insulating with respect to ionic and electronic charge carriers, a number of exceptions have been reported in recent years. Electrically conductive MOFs are highly attractive for applications including electrical energy storage, chemiresistive sensing, and optoelectronics because of their high surface areas and tunable chemical properties. Ion-conducting MOFs are desirable for the synthetically tunable size, shape, and polarity of their pore environments, allowing for the tailored development of solid state electrolytes for metal-ion batteries. We developed systematic strategies for the design of MOFs that conduct ions and electrons. For each objective, we leveraged the versatile chemistry of these materials to obtain frameworks with targeted properties towards electronic or ionic charge carriers. We studied the factors that govern electrical transport in MOFs in order to gain fundamental knowledge of this emerging class of materials. We took several approaches to tackle this problem from multiple angles. Namely, we synthesized and characterized new frameworks, investigated post-synthetic modifications to enhance conductivity, and correlated theory and experiment to uncover new mechanistic findings. These results, which put forth new design principles for conductive MOFs, move the field toward one of the DOE Basic Energy Sciences Grand Challenges: to “design and perfect atom- and energy-efficient synthesis of revolutionary new forms of matter with tailored properties.” In addition to investigating the movement of electrons in MOFs, we also studied the movement of other charged species in MOFs, such as protons, lithium, and magnesium. Proton-conducting frameworks could be appealing materials for solid state electrolytes in fuel cells. In addition, they contain crystallographically defined proton-conducting channels, in contrast with state-of-the-art polymer membranes such as Nafion, which are amorphous. Controlling pore size and polarity in MOFs can thus shed light on proton and other ion transport mechanisms, ultimately enabling the design of more advanced electrolyte materials and potentially novel electrical energy storage materials.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Intrinsic Photoconductivity of few-layered ZrS 2 Phototransistors via Multiterminal Measurements

We report intrinsic photoconductivity studies on one of the least examined layered compounds, ZrS 2 .Few-atomic layer ZrS 2 field-effect transistors were fabricated on the Si/SiO 2 substrate and photoconductivity measurements were performed using both two- and four-terminal configurations under the illumination of 532 nm laser source. We measured photocurrent as a function of the incident optical power at several source-drain (bias) voltages. We observe a significantly large photoconductivity when measured in the multiterminal (four-terminal) configuration compared to that in the two-terminal configuration. For an incident optical power of 90 nW, the estimated photosensitivity and the external quantum efficiency (EQE) measured in two-terminal configuration are 0.5 A/W and 120%, respectively, under a bias voltage of 650 mV. Under the same conditions, the four-terminal measurements result in much higher values for both the photoresponsivity (R) and EQE to 6 A/W and 1400%, respectively. This significant improvement in photoresponsivity and EQE in the four-terminal configuration may have been influenced by the reduction of contact resistance at the metal-semiconductor interface, which greatly impacts the carrier mobility of low conducting materials. This suggests that photoconductivity measurements performed through the two-terminal configuration in previous studies on ZrS 2 and other 2D materials have severely underestimated the true intrinsic properties of transition metal dichalcogenides and their remarkable potential for optoelectronic applications.

36 MATERIALS SCIENCE↗
NASA NTRS1996

Transparent, Conductive Coatings Developed for Arc-Proof Solar Arrays

Transparent, conductive thin-film coatings have many potential applications where a surface must be able to dissipate electrical charges without sacrificing its optical properties. Such applications include automotive and aircraft windows, heat mirrors, optoelectronic devices, gas sensors, and solar cell array surfaces for space applications. Many spacecraft missions require that solar cell array surfaces dissipate charges in order to avoid damage such as electronic upsets, formation of pinholes in the protective coatings on solar array blankets, and contamination due to deposition of sputtered products. In tests at the NASA Lewis Research Center, mixed thin-films of sputter-deposited indium tin oxide (ITO) and magnesium fluoride (MgF2) that could be tailored to the desired sheet resistivity, showed transmittance values of greater than 90 percent. The samples evaluated were composed of mixed, thin-film ITO/MgF2 coatings, with a nominal thickness of 650 angstroms, deposited onto glass substrates. Preliminary results indicated that these coatings were durable to vacuum ultraviolet radiation and atomic oxygen. These coatings show promise for use on solar array surfaces in polar low-Earth-orbit environments, where a sheet resistivity of less than 10(exp 8)/square is required, and in geosynchronous orbit environments, where a resistivity of less than 10(exp 9)/square is required.

Source record↗
DOE OSTI2022

Structure-controlled intramolecular charge transfer in asymmetric pyrene-based luminogens: synthesis, characterization and optical properties

Full-colour emitting materials have been widely studied driven by their promising potential application in fluorescence imaging and optoelectronic devices. In this paper, the synthesis and charactization of four asymmetric D–A type pyrene-based luminogens 2 is presented. Here, the experimental results revealed that this type of pyrene derivative possesses tunable optical properties by introducing D/A groups at the 1-, 3-positions and K-region (5-position) of the pyrene core. Wide emission bands from deep blue (429 nm) to yellow (567 nm) were obtained in different solutions or states. Combined with the theoretical calculations, this work provides an efficient strategy to develop pyrene-based full-colour photoelectric materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗