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Results for “memory effects”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 559 records · Page 31
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Annealing effects on the structural and magnetic properties of off-stoichiometric Fe-Mn-Ga ferromagnetic shape memory alloys

Annealing plays an important role in modifying structures and properties of ferromagnetic shape memory alloys (FSMAs). The annealing effect on the structures and magnetic properties of off-stoichiometric Fe 45 Mn 26 Ga 29 FSMA has been investigated at different elevated temperatures. Rietveld refinements of neutron diffraction patterns display that the formation of the γ phase in Fe 45 Mn 26 Ga 29 annealed at 1073 K increases the martensitic transformation temperature and reduces the thermal hysteresis in comparison to the homogenized sample. The phase segregation of a Fe-rich cubic phase and a Ga-rich cubic phase occurs at the annealing temperature of 773 K. The atomic occupancies of the alloys are determined thanks to the neutron's capability of differentiating transition metals. The annealing effects at different temperatures introduce a different magnetic characteristic that is associated with distinctive structural changes in the crystal.

36 MATERIALS SCIENCE↗
DOE OSTI2026

T-FSM: A Scalable Distributed Task-Based System for Frequent Subgraph Pattern Mining from a Big Graph

Finding frequent subgraph patterns in a big graph is an important problem with many applications such as classifying chemical compounds and building indexes to speed up graph queries. Since this problem is NP-hard, some recent parallel and distributed systems have been developed to accelerate the mining. However, they often have a huge memory cost, very long running time, suboptimal load balancing, poor scale-out capability, and possibly inaccurate results. In this article, we propose an efficient system called T-FSM for parallel mining of frequent subgraph patterns in a big graph. T-FSM supports a new anti-monotonic frequentness measure called Fraction-Score, which is more accurate than the widely used MNI measure. The execution engine of T-FSM supports both intra-machine parallelism and inter-machine parallelism. For intra-machine parallelism, T-FSM adopts a novel task-based execution model to ensure high multithreading concurrency, bounded memory consumption, and effective load balancing. For inter-machine parallelism, T-FSM ensures good scale-out performance with a lightweight pattern rebalancing approach that reduces workload skewness of pattern evaluations among machines. To avoid recomputing the contexts for migrated patterns, we design a novel context cache table to support concurrent and asynchronous requesting and caching of remote context data, which can timely evict and garbage collect used pattern contexts that are no longer needed to keep memory consumption bounded. Extensive experiments show that T-FSM is orders of magnitude faster than existing state-of-the-art parallel systems (more than 10×, 51×, 131×, 55× speedup over ScaleMine, DistGraph, Pangolin and Peregrine, respectively) and distributed systems (more than 42× and 88× over ScaleMine and DistGraph, respectively) for frequent subgraph pattern mining, and it scales out satisfactorily to 512 CPU cores on the Polaris supercomputer at Argonne National Laboratory.

97 MATHEMATICS AND COMPUTING↗
NASA NTRS2003

RTSJ Memory Areas and Their Affects on the Performance of a Flight-Like Attitude Control System

The two most important factors in improving performance in any software system, but especially a real-time, embedded system, are knowing which components are the low performers and knowing what can be done to improve their performance. The word performance with respect to a real-time, embedded system does not necessarily mean fast execution, which is the common definition when discussing non real-time systems. It also includes meeting all of the specified execution dead-lines and executing at the correct time without sacrificing non real-time performance. Using a Java prototype of an existing control system used on Deep Space 1[1], the effects from adding memory areas are measured and evaluated with respect to improving performance.

Real-time Specification for Java2 (RTSJ)↗
NASA NTRS2005

Characteristics Of Ferroelectric Logic Gates Using a Spice-Based Model

A SPICE-based model of an n-channel ferroelectric field effect transistor has been developed based on both theoretical and empirical data. This model was used to generate the I-V characteristic of several logic gates. The use of ferroelectric field effect transistors in memory circuits is being developed by several organizations. The use of FFETs in other circuits, both analog and digital needs to be better understood. The ability of FFETs to have different characteristics depending on the initial polarization can be used to create logic gates. These gates can have properties not available to standard CMOS logic gates, such as memory, reconfigurability and memory. This paper investigates basic properties of FFET logic gates. It models FFET inverter, NAND gate and multi-input NAND gate. The I-V characteristics of the gates are presented as well as transfer characteristics and timing. The model used is a SPICE-based model developed from empirical data from actual Ferroelectric transistors. It simulates all major characteristics of the ferroelectric transistor, including polarization, hysteresis and decay. Contrasts are made of the differences between FFET logic gates and CMOS logic gates. FFET parameters are varied to show the effect on the overall gate. A recodigurable gate is investigated which is not possible with CMOS circuits. The paper concludes that FFETs can be used in logic gates and have several advantages over standard CMOS gates.

MacLeod, Todd C.↗
NASA NTRS2004

Effects of Heavy Ion Exposure on Nanocrystal Nonvolatile Memory

We have irradiated engineering samples of Freescale 4M nonvolatile memories with heavy ions. They use Silicon nanocrystals as the storage element, rather than the more common floating gate. The irradiations were performed using the Texas A&M University cyclotron Single Event Effects Test Facility. The chips were tested in the static mode, and in the dynamic read mode, dynamic write (program) mode, and dynamic erase mode. All the errors observed appeared to be due to single, isolated bits, even in the program and erase modes. These errors appeared to be related to the micro-dose mechanism. All the errors corresponded to the loss of electrons from a programmed cell. The underlying physical mechanisms will be discussed in more detail later. There were no errors, which could be attributed to malfunctions of the control circuits. At the highest LET used in the test (85 MeV/mg/sq cm), however, there appeared to be a failure due to gate rupture. Failure analysis is being conducted to confirm this conclusion. There was no unambiguous evidence of latchup under any test conditions. Generally, the results on the nanocrystal technology compare favorably with results on currently available commercial floating gate technology, indicating that the technology is promising for future space applications, both civilian and military.

Oldham, Timothy R.↗
DOE OSTI2022

Low-temperature processed beta-phase In 2 Se 3 ferroelectric semiconductor thin film transistors

As scaling becomes increasingly difficult, there is growing interest in vertical or three-dimensional stacking of transistors and especially memory. Ferroelectric semiconductor field effect transistors can be key enablers to improve energy efficiency and overall chip and memory performance. In this work, low-temperature processed, back-end-of-the-line compatible transistors were demonstrated by depositing a layered chalcogenide ferroelectric semiconductor, beta-phase In 2 Se 3 , at temperature as low as 400 °C. Top gate n-channel In 2 Se 3 thin film transistors were fabricated with field-effect mobility ∼1 cm 2 V −1 s −1 , and simple polarization switching based memory results are presented.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Randomized methods to characterize large-scale vortical flow networks

We demonstrate the effective use of randomized methods for linear algebra to perform network-based analysis of complex vortical flows. Network theoretic approaches can reveal the connectivity structures among a set of vortical elements and analyze their collective dynamics. These approaches have recently been generalized to analyze high-dimensional turbulent flows, for which network computations can become prohibitively expensive. In this work, we propose efficient methods to approximate network quantities, such as the leading eigendecomposition of the adjacency matrix, using randomized methods. Specifically, we use the Nyström method to approximate the leading eigenvalues and eigenvectors, achieving significant computational savings and reduced memory requirements. The effectiveness of the proposed technique is demonstrated on two high-dimensional flow fields: two-dimensional flow past an airfoil and two-dimensional turbulence. We find that quasi-uniform column sampling outperforms uniform column sampling, while both feature the same computational complexity.

97 MATHEMATICS AND COMPUTING↗
NASA NTRS1980

SUMC fault tolerant computer system

The results of the trade studies are presented. These trades cover: establishing the basic configuration, establishing the CPU/memory configuration, establishing an approach to crosstrapping interfaces, defining the requirements of the redundancy management unit (RMU), establishing a spare plane switching strategy for the fault-tolerant memory (FTM), and identifying the most cost effective way of extending the memory addressing capability beyond the 64 K-bytes (K=1024) of SUMC-II B. The results of the design are compiled in Contract End Item (CEI) Specification for the NASA Standard Spacecraft Computer II (NSSC-II), IBM 7934507. The implementation of the FTM and memory address expansion.

Source record↗
DOE OSTI2015

Charge transport in molecular junctions: From tunneling to hopping with the probe technique

We demonstrate that a simple phenomenological approach can be used to simulate electronic conduction in molecular wires under thermal effects induced by the surrounding environment. This “Landauer-Büttiker’s probe technique” can properly replicate different transport mechanisms, phase coherent nonresonant tunneling, ballistic behavior, and hopping conduction. Specifically, our simulations with the probe method recover the following central characteristics of charge transfer in molecular wires: (i) the electrical conductance of short wires falls off exponentially with molecular length, a manifestation of the tunneling (superexchange) mechanism. Hopping dynamics overtakes superexchange in long wires demonstrating an ohmic-like behavior. (ii) In off-resonance situations, weak dephasing effects facilitate charge transfer, but under large dephasing, the electrical conductance is suppressed. (iii) At high enough temperatures, k{sub B}T/ϵ{sub B} > 1/25, with ϵ{sub B} as the molecular-barrier height, the current is enhanced by a thermal activation (Arrhenius) factor. However, this enhancement takes place for both coherent and incoherent electrons and it does not readily indicate on the underlying mechanism. (iv) At finite-bias, dephasing effects may impede conduction in resonant situations. We further show that memory (non-Markovian) effects can be implemented within the Landauer-Büttiker’s probe technique to model the interaction of electrons with a structured environment. Finally, we examine experimental results of electron transfer in conjugated molecular wires and show that our computational approach can reasonably reproduce reported values to provide mechanistic information.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1991

Heavy-ion induced single-event upset in integrated circuits

The cosmic ray environment in space can affect the operation of Integrated Circuit (IC) devices via the phenomenon of Single Event Upset (SEU). In particular, heavy ions passing through an IC can induce sufficient integrated current (charge) to alter the state of a bistable circuit, for example a memory cell. The SEU effect is studied in great detail in both static and dynamic memory devices, as well as microprocessors fabricated from bipolar, Complementary Metal Oxide Semiconductor (CMOS) and N channel Metal Oxide Semiconductor (NMOS) technologies. Each device/process reflects its individual characteristics (minimum scale geometry/process parameters) via a unique response to the direct ionization of electron hole pairs by heavy ion tracks. A summary of these analytical and experimental SEU investigations is presented.

Zoutendyk, J. A.↗
DOE OSTI2022

A Highly Effective African Swine Fever Virus Vaccine Elicits a Memory T Cell Response in Vaccinated Swine

African Swine Fever Virus (ASFV) is the causative agent of a highly contagious and lethal vector-borne disease in suids. Recently, a live attenuated virus strain, developed using the currently circulating, virulent Georgia strain (ASFV-G) with a single gene deletion (ASFV-G-ΔI177L), resulted in an effective vaccine. Nevertheless, protective immune response mechanisms induced by this candidate are poorly understood. In this study, Yorkshire crossbred swine intramuscularly vaccinated with 10 6 50% hemadsorption dose (HAD 50 ) of ASFV-G-ΔI177L or a vehicle control were challenged at 28 days post-inoculation (dpi) with 10 2 HAD 50 of ASFV-G. Analysis of purified peripheral blood mononuclear cells following inoculation and challenge revealed that CD4+, CD8+ and CD4+CD8+ central memory T cells (CD44+CD25–CD27–CD62L+CCR7+, T cm ) decreased significantly by 28 dpi in ASFV-G-ΔI177L-vaccinated swine compared to baseline and time-matched controls. Conversely, CD4+, CD8+ and CD4+CD8+ effector memory T cells (CD44+CD25–CD27–CD62–CCR7–, T em ) increased significantly among ASFV-G-ΔI177L-vaccined swine by 28 dpi compared to baseline and time-matched controls. Additionally, the percentage of natural killer (NK), CD4+ and CD4+CD8+ T em and CD8+ T cm and T em positive for IFNγ increased significantly following inoculation, surpassing that of controls by 28 dpi or earlier. These results suggest that NK and memory T cells play a role in prote

60 APPLIED LIFE SCIENCES↗
DOE OSTI2015

Plasma enhanced multistate storage capability of single ZnO nanowire based memory

Multiple-state storage (MSS) is common for resistive random access memory, but the effects of plasma treatment on the MSS and the switching properties have been scarcely investigated. We have demonstrated a stable four-state storage capability of single zinc oxide nanowire (ZnO NW) treated by argon plasma. The electrical switching is attributed to the electron trapping and detrapping from the oxygen vacancies (V{sub o}s). The MSS relates to the electrical-thermal induced distribution of the V{sub o}s which determines electron transport behavior to show different resistance states. Additionally, programming (set and reset) voltages decrease with plasma treatment due to the thickness modulation of the interface barrier.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

Phase transformation and microstructure evolution of the deformed Ti-30Zr-5Nb shape memory alloy

The phase transformation and microstructures of the deformed Ti-30Zr-5Nb shape memory alloy were investigated. The X-ray diffraction measurements indicated that the Ti-30Zr-5Nb alloy was composed of a single orthorhombic α″-martensite phase. The alloy exhibited one yielding behavior in the tensile test, with a critical stress of ~ 600 MPa and a tensile strain of approximately 15%. A shape memory recovery accompanied by a permanent strain was exhibited in the deformed alloys when heated at 873 K. The permanent strain increased with increasing pre-strain. The microstructure evolution of the deformed alloy was investigated by transmission electron microscopy. The results showed that the martensite reorientation occurred and the dislocations were generated during deformation. The alloy displayed a reversible martensite transformation start temperature as high as 763 K. However, no strain-induced martensite stabilization was found in the deformed alloy with different pre-strain levels, potentially because the large chemical energy of the Ti-30Zr-5Nb alloy depressed the effects of the elastic energy and the dissipative energy. - Highlights: • Ti-30Zr-5Nb alloy is composed of single orthorhombic α″-martensite phase with M{sub s} of 721 K. • No martensite stabilization has been found in Ti-30Zr-5Nb alloy with different pre-strain. • Ti-30Zr-5Nb shows the maximum shape memory effect of 2.75% with a pre-strain of 8%.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Fractional space–time nonlinear reaction–convection–diffusion

We comment the fractional space–time reaction–convection–diffusion defined by Grünwald–Letnikov, Riesz and Riesz–Feller fractional derivatives. We find the explicit travelling wave solution, using the similarity reduction. We plot its graphics to illustrate the anomalous behavior and investigate its properties associated with memory and distance effects.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2016

Toward Design Principles for Diffusionless Transformations: The Frustrated Formation of Co–Co Bonds in a Low-Temperature Polymorph of GdCoSi 2

Diffusionless (or displacive) phase transitions allow inorganic materials to show exquisite responsiveness to external stimuli, as is illustrated vividly by the superelasticity, shape memory, and magnetocaloric effects exhibited by martensitic materials. In this Article, we present a new diffusionless transition in the compound GdCoSi 2 , whose origin in frustrated bonding points toward generalizable design principles for these transformations. We first describe the synthesis of GdCoSi 2 and the determination of its structure using single crystal X-ray diffraction. While previous studies based on powder X-ray diffraction assigned this compound to the simple CeNi 1–x Si 2 structure type (space group Cmcm), our structure solution reveals a superstructure variant (space group Pbcm) in which the Co sublattice is distorted to create zigzag chains of Co atoms. DFT-calibrated Hückel calculations, coupled with a reversed approximation Molecular Orbital (raMO) analysis, trace this superstructure to the use of Co–Co isolobal bonds to complete filled 18 electron configurations on the Co atoms, in accordance with the 18–n rule. The formation of these Co–Co bonds is partially impeded, however, by a small degree of electron transfer from Si-based electronic states to those with Co–Co σ* character. The incomplete success of Co–Co bond creation suggests that these interactions are relatively weak, opening the possibility of them being overcome by thermal energy at elevated temperatures. In fact, high-temperature powder and single crystal X-ray diffraction data, as well as differential scanning calorimetry, indicate that a reversible Pbcm to Cmcm transition occurs at about 380 K. This transition is diffusionless, and the available data point toward it being first-order. We expect that similar cases of frustrated interactions could be staged in other rare earth–transition metal–main group phases, providing a potentially rich source of compounds exhibiting diffusionless transformations and the unique properties these transitions mediate.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Communication: Practical and rigorous reduction of the many-electron quantum mechanical Coulomb problem to O(N{sup 2/3}) storage

It is tacitly accepted that, for practical basis sets consisting of N functions, solution of the two-electron Coulomb problem in quantum mechanics requires storage of O(N{sup 4}) integrals in the small N limit. For localized functions, in the large N limit, or for planewaves, due to closure, the storage can be reduced to O(N{sup 2}) integrals. Here, it is shown that the storage can be further reduced to O(N{sup 2/3}) for separable basis functions. A practical algorithm, that uses standard one-dimensional Gaussian-quadrature sums, is demonstrated. The resulting algorithm allows for the simultaneous storage, or fast reconstruction, of any two-electron Coulomb integral required for a many-electron calculation on processors with limited memory and disk space. For example, for calculations involving a basis of 9171 planewaves, the memory required to effectively store all Coulomb integrals decreases from 2.8 Gbytes to less than 2.4 Mbytes.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

High Performance Adaptive Physics Refinement to Enable Large-Scale Tracking of Cancer Cell Trajectory

The ability to track simulated cancer cells through the circulatory system, important for developing a mechanistic understanding of metastatic spread, pushes the limits of today's supercomputers by requiring the simulation of large fluid volumes at cellular-scale resolution. To overcome this challenge, we introduce a new adaptive physics refinement (APR) method that captures cellular-scale interaction across large domains and leverages a hybrid CPU-GPU approach to maximize performance. Through algorithmic advances that integrate multi-physics and multi-resolution models, we establish a finely resolved window with explicitly modeled cells coupled to a coarsely resolved bulk fluid domain. In this work we present multiple validations of the APR framework by comparing against fully resolved fluid-structure interaction methods and employ techniques, such as latency hiding and maximizing memory bandwidth, to effectively utilize heterogeneous node architectures. Collectively, these computational developments and performance optimizations provide a robust and scalable framework to enable system-level simulations of cancer cell transport.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2015

Features of the uniaxial elastic deformation of X-ray-irradiated p-Si crystals

Changes in the conductivity of p-Si single-crystals irradiated at room temperature during their mechanical compression and stress relief are studied. It is shown that irradiation is accompanied by the generation of point defects in silicon, which play the role of stoppers for dislocation motion. The effect of “radiation memory” in “electronic” silicon crystals is detected.

36 MATERIALS SCIENCE↗