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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 559 records · Page 31
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Entropy-Stabilized Multication Fluorides as a Conversion-Type Cathode for Li-Ion Batteries–Impact of Element Selection

Metal fluorides (e.g., FeF 2 and FeF 3 ) have received attention as conversion-type cathode materials for Li-ion batteries due to their higher theoretical capacity compared to that of common intercalation materials. However, their practical use has been hindered by low round-trip efficiency, voltage hysteresis, and capacity fading. Cation substitution has been proposed to address these challenges, and recent advancements in battery performance involve the introduction of entropy stabilization in an attempt to facilitate reversible conversion reactions by increasing configurational entropy. Building on this concept, high entropy fluorides with five cations were synthesized by using a simple mechanochemical route. In order to examine the impact of element selection, Co 0.2 Cu 0.2 Ni 0.2 Zn 0.2 Fe 0.2 F 2 (HEF-Fe) was compared with Co 0.2 Cu 0.2 Ni 0.2 Zn 0.2 Mg 0.2 F 2 (HEF-Mg), replacing electrochemically inactive Mg with Fe as an active participant in the conversion reaction. Combining electrochemical measurements with first-principles calculations, high-resolution electron microscopy, and synchrotron X-ray analysis, HEFs’ battery performances and conversion reaction mechanisms were investigated in detail. The results highlighted that replacement of Mg with Fe was beneficial, with enhanced capacity, rate capability, and surface stability. In addition, it was found that HEF-Fe showed similar cycle stability without an electrochemically inactive element. In conclusion, these findings provide valuable insights for the design of high entropy multielement fluorides for improved Li-ion battery performance.

25 ENERGY STORAGE↗
DOE OSTI2022

An optoelectronic heterostructure for neuromorphic computing: CdS/V 3 O 5

Nonvolatile resistive switching is one of the key phenomena for emerging applications in optoelectronics and neuromorphic computing. In most of the cases, an electric field is applied to a two terminal dielectric material device and leads to the formation of a low resistance filament due to ion migration. However, the stochastic nature of the ion migration can be an impediment for the device robustness and controllability, with uncontrolled variations of high and low resistance states or threshold voltages. Here, we report an optically induced resistive switching based on a CdS/V 3 O 5 heterostructure which can overcome this issue. V 3 O 5 is known to have a second order insulator to metal transition around T c ≈ 415 K, with an electrically induced threshold switching at room temperature. Upon illumination, the direct transfer of the photoinduced carriers from the CdS into V 3 O 5 produces a nonvolatile resistive switching at room temperature. The initial high resistance can be recovered by reaching the high temperature metallic phase, i.e., temperatures above T c . Interestingly, this resistive switching becomes volatile around the T c . In conclusion, by locally manipulating the volatile and nonvolatile resistive switching using electric field and light, this system is a promising platform for hardware based neuromorphic computing implementations.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2023

Shivalik Plasma Device-I, a glow discharge device to study the collective dynamics of dusty plasma

Using a uniquely configured glow discharge-based Shivalik Plasma Device-I, we demonstrate a variety of collective phenomena in dusty plasma away from the glow discharge region. The cylindrical glass device produces plasma using parallel disc-shaped electrodes with a smaller anode size than the cathode. The dust microparticles are initially sprinkled over the grounded cathode. These particles acquire a significant negative charge upon plasma formation, resulting in their levitation due to the balance between the Coulomb force and gravity. The new device supports the levitation of a big-sized (10 × 8 × 5 cm 3 ) three-dimensional dust cloud over the glass surface. It contrasts the dusty plasma formations in-between electrodes reported earlier. As the discharge voltage varies from high to low, the dust cloud travels from over the glass surface to between the electrodes. A complex interplay of dust void over the cathode, a sharp density gradient, and gravity lead to self-excitation of collective dust phenomena. It includes dust density waves (phase velocity, v ph ~4 cm/s), dust cloud oscillation (frequency, f = 5 Hz), sheared flow (flow velocity, v f ~ 1 cm/s), and multiple-sized dust vortices. These dust vortices provided an excellent platform for studying turbulent mixing phenomena. The power spectrum analysis agreed with two-dimensional Kolmogorov power-law scaling. This is an ideal dusty plasma apparatus where we can create or move the dust cloud to a location of choice from the glass surface to in-between the electrodes and excite one among many collective dust dynamics.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings

Here, this work reports on the fabrication and properties of a homojunction gallium nitride (GaN) p-i-n (PIN) rectifier fabricated on a free-standing GaN substrate. Uniform device performance is achieved with breakdown voltage (BV) >1.2 kV and low ON-resistance × area ( R ON A ). The statistics of the BV measurements show 58.5% of devices achieve BV >1.3 kV, and 71.1% of devices achieve BV >1.2 kV, as attributed to high quality and control in both epitaxial growth and device process. At room temperature, R ON A is 0.23 mΩ∙ cm 2 at a current density ( J ) of 6.9 kA/cm2. The corresponding Baliga’s figure of merit is >5.97 GW/cm 2 . Temperature-dependent reverse I – V measurements were performed and show a positive temperature coefficient of 0.42 V/K, indicating the avalanche capability of reverse breakdown. Further analysis with the Poole-Frenkel model on the temperature-dependent measurement suggested that a trap-assisted tunneling process contributed to the reverse leakage current. Floating guard rings (FGRs) formed by nitrogen implantation serve as an effective edge termination technique in these GaN PIN rectifiers, resulting in uniform performance in both forward and reverse bias.

42 ENGINEERING↗
DOE OSTI2021

Design of an RF-Dipole Crabbing Cavity System for the Electron-Ion Collider

The Electron-Ion Collider requires several crabbing systems to facilitate head-on collisions between electron and proton beams in increasing the luminosity at the interaction point. One of the critical rf systems is the 197 MHz crabbing system that will be used in crabbing the proton beam. Many factors such as the low operating frequency, large transverse voltage requirement, tight longitudinal and transverse impedance thresholds, and limited beam line space makes the crabbing cavity design challenging. The rf-dipole cavity design is considered as one of the crabbing cavity options for the 197 MHz crabbing system. The cavity is designed including the HOM couplers, FPC and other ancillaries. This paper presents the detailed electromagnetic design, mechanical analysis, and conceptual cryomodule design of the crabbing system.

De Silva, S. U.↗
DOE OSTI2023

Compact scalable nanofiber mass production using electrospinning

A low power out put high voltage power supply unit for mass producing thicker nanofiber mat has been built in-house and earned a provisional patent last year. This nanofiber fabrication unit has unique features to produce stand alone thick ceramic nanofiber for specialized application such as isotop production and accelerator targets for high energy physics experiments. This is a versatile unit which can produce wide variety of polymer nanofibers on a semi industrial scale for application in air filtration, face mask, facial beauty pads, gas sensors and many more.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2024

Al‐Rich AlGaN Transistors with Regrown p‐AlGaN Gate Layers and Ohmic Contacts

Abstract Epitaxial regrowth processes are presented for achieving Al‐rich aluminum gallium nitride (AlGaN) high electron mobility transistor (HEMTs) with p‐type gates with large, positive threshold voltage for enhancement mode operation and low resistance Ohmic contacts. Utilizing a deep gate recess etch into the channel and an epitaxial regrown p‐AlGaN gate structure, an Al 0.85 Ga 0.15 N barrier/Al 0.50 Ga 0.50 N channel HEMT with a large positive threshold voltage (V TH = +3.5 V) and negligible gate leakage is demonstrated. Epitaxial regrowth of AlGaN avoids the use of gate insulators which can suffer from charge trapping effects observed in typical dielectric layers deposited on AlGaN. Low resistance Ohmic contacts (minimum specific contact resistance = 4 × 10 −6 Ω cm 2 , average = 1.8 × 10 −4 Ω cm 2 ) are demonstrated in an Al 0.85 Ga 0.15 N barrier/Al 0.68 Ga 0.32 N channel HEMT by employing epitaxial regrowth of a heavily doped, n‐type, reverse compositionally graded epitaxial structure. The combination of low‐leakage, large positive threshold p‐gates and low resistance Ohmic contacts by the described regrowth processes provide a pathway to realizing high‐current, enhancement‐mode, Al‐rich AlGaN‐based ultra‐wide bandgap transistors.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Online Detection of Low-Quality Synchrophasor Data Considering Frequency Similarity

Here, this letter proposes a new approach for online detection of low-quality synchrophasor data under both normal and event conditions. The proposed approach utilizes the features of synchrophasor data in time and frequency domains to distinguish multiple regional PMU signals and detect low-quality synchrophasor data. It is more effective to detect low-quality data with apparently indistinguishable profiles. Case studies from recorded synchrophasor measurements verify the effectiveness of the proposed approach for detecting low-quality synchrophasor data in frequency, voltage magnitude and voltage angle.

42 ENGINEERING↗
DOE OSTI2026

Mechanism-Informed Breakdown: Understanding Degradation by Controlling Voltage-Hold Patterns in Proton Exchange Membrane Water Electrolyzers

Low catalyst loadings pose challenges to performance stability in proton exchange membrane (PEM) water electrolysis over extended operation. To study the impact of degradation mechanisms and voltage loss rates, different stress tests are applied to membrane electrode assemblies. Potential cycling conditions were observed to induce higher degrees of iridium (Ir) oxide crystallization, ionomer degradation, and catalyst layer (CL) thinning, which likely contributed to higher kinetic loss rates. On the other hand, while Ir migrating into the PEM (Ir band) generally impairs performance, the interconnected and more uniform Ir band formed under a constant 2 V hold may allow for Ir at the catalyst/membrane interface to remain electronically connected and kinetically accessible, as well as indicate greater Ir site access during the applied stressor. The 2 V hold also demonstrates improved kinetic durability through a lower Tafel slope, faster polarization kinetics, and reduced charge transfer resistance. In contrast, potential cycling caused the migration of disconnected Ir agglomerates into the membrane bulk and created a steady increase in charge transfer resistance, a more dramatic decrease in capacitance (46.7% loss), and significant damage to the surrounding ionomer, indicating a decline in both the quality and quantity of active sites in the anode CL. This work underscores the distinct degradation pathways associated with load holds versus cycling, highlighting the role of catalyst-ionomer interactions in kinetic performance and long-term stability. These insights can inform operational strategies for PEM electrolyzers powered by intermittent energy sources, aiming to minimize efficiency losses over extended operation.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Carbon Corrosion in CO2 Electrolysis Systems

Driven by concerns over climate change, interest in CO2 conversion technologies has dramatically increased in recent years. By viewing CO2 as a readily available feedstock, many pathways for the production of carbon-neutral fuels and chemicals become available. In converting CO2, low carbon emitting energy sources must be used to ensure a low carbon footprint of the fuel and chemical products. The low-temperature electrochemical conversion of CO2 is a promising technology and allows for direct integration with renewable electricity sources. The development of low-temperature CO2 electrolysis technologies is informed by both PEM fuel cells and water electrolyzers, both of which are at a higher stage of development. However, CO2 electrolysis operates at a much higher cell voltage (-3V) than other low-temperature electrochemical processes, which can have implications for materials compatibility in the electrolyzer device. Carbon corrosion is of particular concern for the anode of CO2 electrolyzers, as a large driving force for corrosion exists due to the high required cell potentials. In this presentation, recent observations will be shared on carbon corrosion of the anode gas diffusion electrode (GDE) in low-temperature alkaline exchange membrane CO2 electrolysis. Results from ex-situ tests designed to isolate the carbon corrosion process for anode GDEs will be shared. These results will provide guidance on materials selection for CO2 utilization MEAs, which need to have a lifetime of several years to ensure industrial viability.

BIOMASS FUELS↗
DOE OSTI2024

High-current, high-voltage AlN Schottky barrier diodes

AlN Schottky barrier diodes with low ideality factor (<1.2), low differential ON-resistance (<0.6 mΩ cm 2 ), high current density (>5 kA cm −2 ), and high breakdown voltage (680 V) are reported. The device structure consisted of a two-layer, quasi-vertical design with a lightly doped AlN drift layer and a highly doped Al 0.75 Ga 0.25 N ohmic contact layer grown on AlN substrates. A combination of simulation, current–voltage measurements, and impedance spectroscopy analysis revealed that the AlN/AlGaN interface introduces a parasitic electron barrier due to the conduction band offset between the two materials. This barrier was found to limit the forward current in fabricated diodes. Further, we show that introducing a compositionally-graded layer between the AlN and the AlGaN reduces the interfacial barrier and increases the forward current density of fabricated diodes by a factor of 10 4 .

Quiñones, C. E. (ORCID:0000000192703747)↗
DOE OSTI2021

Feed-Forward Compensation for Model Predictive Control in Tri-port Current-Source Medium-Voltage String Inverters for PV-Plus-Storage Farms

The novel tri-port current-source medium-voltage string inverter (TCS-MVSI) is a promising candidate for large-scale PV-plus-storage (PVS) farms owing to its galvanic isolation, easy storage integration, soft-switching capability across entire load range, controlled low dv/dt and EMI, benign fault tolerance, etc. Due to its low inertia feature, traditional PI-based control cannot manage large transients effectively. Instead, a model-based predictive control (MPC) is proposed to achieve robust and stable operation. As is well known, the control performance of MPC is compromised by the sampling and computational delay during implementation significantly, if not well addressed. This paper analyzed and quantified these delays and then proposes feed-forward compensation (FFC) for the MPC method to compensate the delays and the large parameter variations due to the low-inertia nature. In addition, this method also compensates for the high dc-link ripple within each switching cycle, a unique issue for low-inertia converters. Here, the proposed method requires low computational effort, allowing it to be extended for multiple ports. The effectiveness of the proposed method has been validated in experiments. In 10 kW test, the proposed method decreases the average dc-link current by 17%, leading to ~20% conduction losses and ~0.5% increase in converter efficiency. In addition, the peak dc-link current also decreases by 15%, resulting in reduced transformer size. As a result, an increased power density can be achieved with the proposed method. Similar improvements have been observed across the power range from 2 kW to 10 kW.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2020

DC Link Voltage Balancing of the Active Front-End for the Extreme Fast Charging Stations

One of the most important challenges of the extreme fast charging (XFC) stations is to balance the DC link voltages of the active front-end (AFE). The multilevel cascaded H-bridge (CHB) converter is a great topology for the AFE applications due to the high power density, low total harmonic distortion (THD), and a low number of active and passive components. In this paper, a technique is proposed for balancing DC-link capacitor voltages of a three-phase CHB converter, when a phase shiftPWM modulation technique is used on all cells of the converter. To reach this goal, the redundant states of the CHB converters are used for generating different AC voltage levels by sorting the voltages of the converters. The proposed voltage balancing technique uses the principles that are employed for the DC link voltage balancing of the low-frequency modulation techniques to balance the DC link voltages of the CHB converter. As shown in this paper, the DC link voltages of the CHB converter can accurately be balanced very fast without using PI controllers, which are used in the conventional DC link voltage balancing techniques. A controller also is proposed which will be used to control the dq currents of the CHB converter. To verify the advantages of the proposed technique, the simulation results of the proposed technique will be carried out in a three-phase 7-cell CHB AFE.

Grid-tied converters, cascaded H-bridge, DC link v↗
DOE OSTI2023

Low-damage electron beam lithography for nanostructures on Bi 2 Te 3 -class topological insulator thin films

Nanostructured topological insulators (TIs) have the potential to impact a wide array of condensed matter physics topics, ranging from Majorana physics to spintronics. However, the most common TI materials, the Bi 2 Se 3 family, are easily damaged during nanofabrication of devices. In this paper, we show that electron beam lithography performed with a 30 or 50 kV accelerating voltage—common for nanopatterning in academic facilities—damages both nonmagnetic TIs and their magnetically doped counterparts at unacceptable levels. We additionally demonstrate that electron beam lithography with a 10 kV accelerating voltage produces minimal damage detectable through low-temperature electronic transport. In conclusion, although reduced accelerating voltages present challenges in creating fine features, we show that with careful choice of processing parameters, particularly the resist, 100 nm features are reliably achievable.

42 ENGINEERING↗
DOE OSTI2025

Capacitor Design for Self-Resonant Coils for Long-Distance Wireless Power Transfer System

In this paper, an integrated capacitor design is proposed for higher-order resonant tank topologies for self-resonant coils, such as series, parallel, LCC, LLC, etc. The capacitor is one of the large, lossy, and thermally vulnerable components of a high-frequency resonant tank, and designing a high-voltage, thermally stable resonant capacitor can be highly challenging. Designing the extremely high-voltage capacitor as an integral part of the coil reduces the size and complexity of the coil assembly. This paper proposes a low-loss PCB-based high-voltage capacitor design to achieve that target, which can be implemented as an integral part of the coil. The proposed capacitor designs are simulated using Multiphysics FEA and tested experimentally. A 23 kV, 133 pF capacitor prototype was built and tested as part of a 1 kW long-distance wireless charging system. The test results verify the capacitor’s voltage, current, and thermal resiliency performance.

Mohammad, Mostak [ORNL] (ORCID:0000000256388783)↗
DOE OSTI2024

Pure edge-dislocation half-loops in low-temperature Ga⁢N for V-defect formation

Lateral injection of carriers through semipolar crystallographic planes into c-plane QWs is one of the new frontiers in III-N light-emitting diodes (LEDs), especially for long wavelengths. Strategic use of V-defects has proven to be the most promising method for lateral injection, and creating optimal V-defect structure and density is an important research area for reducing forward voltage and increasing wall plug efficiency. Here, in this article, we present a novel method for forming V-defects in nominally unstressed low-temperature Ga⁢N through the generation of pure edge-dislocation half-loops. We present a detailed material science analysis of the loops via scattering-contrast electron microscopy. The loops have pure-edge character with Burgers vector 1/3 ⁢⟨$11\bar{2}0$⟩, and form in a sessile orientation on {$11\bar{2}0$} a-planes. The two arms of the loops are inclined such that the extra half-planes face down toward the growth substrate. The dislocation loops can be used to intentionally form V-defects through conditions of kinetically limited growth: these conditions also favor nucleation of V-defects at ∼100% of other threading dislocations in the Ga⁢N templates. Patterned sapphire substrates (PSS) are one of the most important substrates for III-N LED growth because of their superior light extraction. However, due to its low threading dislocation density, PSS have not been used extensively for V-defect LEDs. This work provides a pathway for improved control of V-defect formation and density on LEDs grown on sapphire with the goal of enabling uniform lateral injection in these V-defect engineered LEDs with low forward voltage, including PSS for high light extraction.

LEDs↗
DOE OSTI2026

Analog-to-digital converter based on voltage-controlled superconducting devices

The increasing demand for cryogenic electronics in superconducting and quantum computing systems calls for ultra-energy-efficient data conversion architectures that remain functional at deep cryogenic temperatures. Here, in this work, we present the first design of a voltage-controlled superconducting flash analog-to-digital converter (ADC) based on a voltage-controlled quantum-enhanced Josephson junction field-effect transistor (JJFET). Exploiting its strong gate tunability and transistor-like behavior, the JJFET offers a scalable alternative to conventional current-controlled superconducting devices while aligning naturally with CMOS-style design methodologies. Building on our previously developed Verilog-A compact model calibrated to experimental data, we design and simulate a three-bit JJFET-based flash ADC targeted for integration within cryogenic control and readout circuitry in quantum computing. The core comparator block is realized through careful bias current selection and augmented with a three-terminal nanocryotron to precisely define reference voltages. Cascaded JJFET comparators ensure robust voltage gain, cascadability, and logic-level restoration across stages. Simulation results demonstrate accurate quantization behavior with ultra-low power dissipation, underscoring the feasibility of voltage-driven superconducting mixed-signal circuits. This work establishes a critical step toward unifying superconducting logic and data conversion, paving the way for scalable cryogenic architectures in quantum–classical co-processors, low-power artificial intelligence accelerators, and next-generation energy-constrained computing platforms.

Analog-to-digital converter↗
DOE OSTI2022

Design Power Control Strategies of Grid-Forming Inverters for Microgrid Application

This paper develops and compares two control schemes in the application control layer of a non-phase-locked loop (non-PLL) grid-forming (GFM) inverter to gain insight and understanding into how the two schemes affect the dynamic responses of GFM inverters and the transition operation of microgrids. The first scheme adopts power tracking based on an outer current loop in grid-connected mode and droop control in islanded mode, and the second uses droop control in both grid-connected and islanded modes. Analytical study is developed to compare the performance of these two strategies from various aspects, including fundamental differences, transition operation, power tracking, and P-Q capability with low point-of-common-coupling (PCC) voltages. Extensive simulation testing is carried out to validate the control performance of these two control strategies, and the simulation testing confirms the findings of the analytic study. Finally, the second strategy is recommended because of its superior control performance and ease of implementation. The analysis and results are useful in developing reliable control schemes for non-PLL GFM inverters because increasing numbers of inverters will work as non-PLL grid-forming sources in future grids because of their improved stability and reliability.

grid-forming↗