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All sourcesNASA NTRSDOE OSTI
NASA NTRS1995

Wireless Infrared Data Link

Infrared transmitter and receiver designed for wireless transmission of information on measured physical quantity (for example, temperature) from transducer device to remote-acquisition system. In transmitter, output of transducer amplified and shifted with respect to bias or reference level, then fed to voltage-to-frequency converter to control frequency of repetition of current pulses applied to infrared-light-emitting diode. In receiver, frequency of repetition of pulses converted back into voltage indicative of temperature or other measured quantity. Potential applications include logging data while drilling for oil, transmitting measurements from rotors in machines without using slip rings, remote monitoring of temperatures and pressures in hazardous locations, and remote continuous monitoring of temperatures and blood pressures in medical patients, who thus remain mobile.

Roth, Timothy E.↗
NASA NTRS1996

The Role of Linear Acceleration in Visual-Vestibular Interactions and Implications in Aircraft Operations

While considerable attention has been given to visual-vestibular interaction (VVI) during angular motion of the head as might occur during an aircraft spin, much less attention has been given to VVI during linear motion of the head. Such interaction might occur, for example, while viewing a stationary or moving display during vertical take-off and landing operations Research into linear VVI, particularly during prolonged periods of linear acceleration, has been hampered by the unavailability of a programmable translator capable of large excursions We collaborated with Otis Elevator Co. and used their research tower and elevator, whose motion could be digitally programmed, to vertically translate human subjects over a distance of 92.3 meters with a peak linear acceleration of 2 meters/sec(exp 2) During pulsatile or sinusoidal translation, the subjects viewed moving stripes (optokinetic stimulus) or a fixed point source (light emitting diode, led, display), respectively and it was generally found that. The direction of linear acceleration relative to the cardinal head axes and the direction of the slow component of optokinetic nystagmus (OKN) determined the extent of VVI during concomitant stripe motion and linear acceleration. Acceleration along the z head axis (A(sub z)) produced the largest VVI, particularly when the slow component of OKN was in the same direction as eye movements produced by the linear acceleration and Eye movements produced by linear acceleration are suppressed by viewing a fixed target at frequencies below 10 Hz But, above this frequency the suppression produced by VVI is removed. Finally, as demonstrated in non-human primates, vergence of the eyes appears to modulate the vertical eye movement response to linear acceleration in humans.

Correia, Manning J.↗
NASA NTRS1995

Monitoring Composite Material Pressure Vessels with a Fiber-Optic/Microelectronic Sensor System

We discuss the concept of an integrated, fiber-optic/microelectronic distributed sensor system that can monitor composite material pressure vessels for Air Force space systems to provide assessments of the overall health and integrity of the vessel throughout its entire operating history from birth to end of life. The fiber optic component would include either a semiconductor light emitting diode or diode laser and a multiplexed fiber optic sensing network incorporating Bragg grating sensors capable of detecting internal temperature and strain. The microelectronic components include a power source, a pulsed laser driver, time domain data acquisition hardware, a microprocessor, a data storage device, and a communication interface. The sensing system would be incorporated within the composite during its manufacture. The microelectronic data acquisition and logging system would record the environmental conditions to which the vessel has been subjected to during its storage and transit, e.g., the history of thermal excursions, pressure loading data, the occurrence of mechanical impacts, the presence of changing internal strain due to aging, delamination, material decomposition, etc. Data would be maintained din non-volatile memory for subsequent readout through a microcomputer interface.

Klimcak, C.↗
NASA NTRS1995

Growth of Wide Band Gap II-VI Compound Semiconductors by Physical Vapor Transport

The studies on the crystal growth and characterization of II-VI wide band gap compound semiconductors, such as ZnTe, CdS, ZnSe and ZnS, have been conducted over the past three decades. The research was not quite as extensive as that on Si, III-V, or even narrow band gap II-VI semiconductors because of the high melting temperatures as well as the specialized applications associated with these wide band gap semiconductors. In the past several years, major advances in the thin film technology such as Molecular Beam Epitaxy (MBE) and Metal Organic Chemical Vapor Deposition (MOCVD) have demonstrated the applications of these materials for the important devices such as light-emitting diode, laser and ultraviolet detectors and the tunability of energy band gap by employing ternary or even quaternary systems of these compounds. At the same time, the development in the crystal growth of bulk materials has not advanced far enough to provide low price, high quality substrates needed for the thin film growth technology.

Su, Ching-Hua↗
NASA NTRS1997

Optical Sensors for Use in Propulsion Control Systems

This final technical report describes the results of a cooperative effort which was originally established between John Carroll University and the Instrumentation and Control Technology Division at NASA Lewis Research Center on November, 1982, and then continued with the Engine Sensor Technology Branch at NASA Lewis until March, 1995. All work at John Carroll University was directed by the principal investigator of this grant, Klaus Fritsch, Ph.D. For the first two years of this grant this effort was supervised at NASA by Mr. Robert J. Baumbick and for the remainder of the grant by Dr. Glenn M. Beheim. All research was carried out in close cooperation with Dr. Beheim. Electrically passive optical sensors for measurands such as pressure, temperature, position, and rotational speed are required for aircraft engine control in fly-by-light digital aircraft control systems. Fiberoptic data links and optical multiplexing techniques should be used for combining and processing the outputs from several sensors, sharing as many optical end electronic parts as possible. The overall objective of this grant was to explore techniques for designing and constructing such electrically passive optical sensors for measuring physical parameters in jet aircraft engines and for use in aircraft control systems. We have concentrated our efforts on pressure, temperature, and position sensors employing techniques which are relatively immune to transmissivity variations of the fiber links and to variations in intensity of the light source. Infrared light-emitting diodes are employed because of their longevity and immunity to vibration. We have also studied a number of multiplexing techniques. On the following pages I will give thumbnail sketches of the projects carried out under this grant and provide references to publications and John Carroll M.S. theses which resulted directly from this work and which describe these projects in greater detail.

Fritsch, Klaus↗
NASA NTRS1998

Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

Interest in optical devices which can operate in the visible spectrum has motivated research interest in the II-VI wide band gap semiconductor materials. The recent challenge for semiconductor opto-electronics is the development of a laser which can operate at short visible wavelengths, In the past several years, major advances in thin film technology such as molecular beam epitaxy and metal organic chemical vapor deposition have demonstrated the applicability of II-VI materials to important devices such as light-emitting diodes, lasers, and ultraviolet detectors.The demonstration of its optical bistable properties in bulk and thin film forms also make ZnSe a possible candidate material for the building blocks of a digital optical computer. Despite this, developments in the crystal growth of bulk II-VI semiconductor materials has not advanced far enough to provide the low price, high quality substrates needed for the thin film growth technology. The electrical and optical properties of semiconductor materials depend on the native point defects, (the deviation from stoichiometry), and the impurity or dopant distribution. To date, the bulk growth of ZnSe substrates has been plagued with problems related to defects such as non-uniform distributions of native defects, impurities and dopants, lattice strain, dislocations, grain boundaries, and second phase inclusions which greatly effect the device performance. In the bulk crystal growth of some technologically important semiconductors, such as ZnTe, CdS, ZnSe and ZnS, vapor growth techniques have significant advantages over melt growth techniques due to the high melting points of these materials.

Su, Ching-Hua↗
NASA NTRS1999

Overview of Photonic Materials for Application in Space Environments

Future space systems will he based on components evolving from the development and refinement of new and existing photonic materials. Optically based sensors, inertial guidance, tracking systems, communications, diagnostics, imaging and high speed optical processing are but a few of the applications expected to widely utilize photonic materials. The response of these materials to space environment effects (SEE) such as spacecraft charging, orbital debris, atomic oxygen, ultraviolet irradiation, temperature and ionizing radiation will be paramount to ensuring successful space applications. The intent of this paper is to, address the latter two environments via a succinct comparison of the known sensitivities of selected photonic materials to the temperature and ionizing radiation conditions found in space and enhanced space environments Delineation of the known temperature and radiation induced responses in LiNbO3, AlGaN, AlGsAs,TeO2, Si:Ge, and several organic polymers are presented. Photonic materials are realizing rapid transition into applications for many proposed space components and systems including: optical interconnects, optical gyros, waveguide and spatial light modulators, light emitting diodes, lasers, optical fibers and fiber optic amplifiers. Changes to material parameters such as electrooptic coefficients, absorption coefficients, polarization, conductivity, coupling coefficients, diffraction efficiencies, and other pertinent material properties examined for thermo-optic and radiation induced effect. Conclusions and recommendations provide the reader with an understanding of the limitations or attributes of material choices for specific applications.

Taylor, E. W.↗
NASA NTRS2000

Proton Damage in Linear and Digital Optocouplers

Optocoupler failures occurred on the Topex-Poseidon spacecraft after about two years of operation. Later work in the laboratory showed that the failures were due to extreme sensitivity of LEDs within the optocouplers to displacement damage from protons. Although earlier work had been done on displacement damage in light-emitting diodes, none of the devices studied previously had been heavily damaged at the low radiation levels where the optocouplers failed in space. Subsequent work has shown that LED damage varies over an extremely wide range, depending on the particular manufacturing technology. This paper discusses proton degradation of linear and digital optocouplers. One obvious way to harden optocoupler technologies is to select LEDs that are more resistant to displacement damage. A direct comparison is made of degradation of a commercial linear optocoupler from one manufacturer with a modified version of the same device with a different LED technology. Other factors, including degradation of optical photoresponse and transistor -ain are also discussed, along with basic comparisons of digital and analog optocouplers. Linear optocouplers are designed with somewhat different requirements than digital optocouplers, which not only affects their radiation response but also the interpretation of radiation test data.

Johnston, A. H.↗
NASA NTRS2002

Semiclassical Calculation of Reaction Rate Constants for Homolytical Dissociations

There is growing interest in extending organometallic chemical vapor deposition (OMCVD) to III-V materials that exhibit large thermal decomposition at their optimum growth temperature, such as indium nitride. The group III nitrides are candidate materials for light-emitting diodes and semiconductor lasers operating into the blue and ultraviolet regions. To overcome decomposition of the deposited compound, the reaction must be conducted at high pressures, which causes problems of uniformity. Microgravity may provide the venue for maintaining conditions of laminar flow under high pressure. Since the selection of optimized parameters becomes crucial when performing experiments in microgravity, efforts are presently geared to the development of computational OMCVD models that will couple the reactor fluid dynamics with its chemical kinetics. In the present study, we developed a method to calculate reaction rate constants for the homolytic dissociation of III-V compounds for modeling OMCVD. The method is validated by comparing calculations with experimental reaction rate constants.

Beatriz H. Cardelino↗
NASA NTRS1993

Light Source

Research on food growth for long duration spacecraft has resulted in a light source for growing plants indoors known as Qbeam, a solid state light source consisting of a control unit and lamp. The light source, manufactured by Quantum Devices, Inc., is not very hot, although it generates high intensity radiation. When Ron Ignatius, an industrial partner of WCSAR, realized that terrestrial plant research lighting was not energy efficient enough for space use, he and WCSAR began to experiment with light emitting diodes. A line of LED products was developed, and QDI was formed to market the technology. An LED-based cancer treatment device is currently under development.

Source record↗
NASA NTRS2002

Wireless Temperature-Monitoring System

A relatively inexpensive instrumentation system that includes units that are connected to thermocouples and that are parts of a radio-communication network has been developed to enable monitoring of temperatures at multiple locations. Because there is no need to string wires or cables for communication, the system is well suited for monitoring temperatures at remote locations and for applications in which frequent changes of monitored or monitoring locations are needed. The system can also be adapted to monitoring of slowly varying physical quantities, other than temperature, that can be transduced by solid-state electronic sensors. electronic sensors. The system comprises any number of transmitting units and a single receiving unit. Each transmitting unit includes connections for as many as four external thermocouples, a signal-conditioning module, a control module, and a radio-communication module. The signal-conditioning module acts as an interface between the thermocouples and the rest of the transmitting unit and includes a built-in solid ambient temperature sensor that is in addition to the external thermocouples. The control module is a system-on-chip embedded processor that includes analog-to-digital converters, serial and parallel data ports, and an interface for local connection to an analog meter that is used during installation to verify correct operation. The radio-communication module contains a commercial spread-spectrum transceiver that operates in the 900-MHz industrial, scientific, and medical (ISM) frequency band. This transceiver transmits data to the receiving unit at a rate of 19,200 baud. The receiving unit includes a transceiver like that of a transmitting unit, plus a control module that contains a system-on-chip processor that includes serial data port for output to a computer that runs monitoring and/or control software, a parallel data port for output to a printer, and a seven-segment light-emitting-diode display. Each transmitting unit is battery-powered and can operate for at least seven days continuously while reporting temperatures every half hour. The receiving unit is powered by a wall-mounted transformer source. The receiving unit responds to each transmitting unit and reports the readings of each of the four thermocouples and of the ambient-temperature sensor of the transmitting unit. The end-to-end accuracy of the system is plus or minus 0.2 C over the temperature range from 0 to 100 C. The radio-communication range between the receiving and transmitting units is approximately equal to 0.5 mile (approximately equal to 0.8 km).

Solano, Wanda↗
NASA NTRS2002

Development of Next Generation Lifetime PSP Imaging Systems

This paper describes a lifetime PSP system that has recently been developed using pulsed light-emitting diode (LED) lamps and a new interline transfer CCD camera technology. This system alleviates noise sources associated with lifetime PSP systems that use either flash-lamp or laser excitation sources and intensified CCD cameras for detection. Calibration curves have been acquired for a variety of PSP formulations using this system, and a validation test was recently completed in the Subsonic Aerodynamic Research Laboratory (SARL) at Wright-Patterson Air Force Base (WPAFB). In this test, global surface pressure distributions were recovered using both a standard intensity-based method and the new lifetime system. Results from the lifetime system agree both qualitatively and quantitatively with those measured using the intensity-based method. Finally, an advanced lifetime imaging technique capable of measuring temperature and pressure simultaneously is introduced and initial results are presented.

Watkins, A. Neal↗
NASA NTRS2005

Monolithic Integrated Radiation Sensor Using Stimulated Luminescence From Alumina

The project goal was to design and test a monolithic integrated device for radiation sensing, using optically stimulated luminescence (OSL) from Al2O3:C. The device would consist of GaN/InGaN-based components epitaxially grown on each side of a A12O3:C substrate. Radiation energy stored in the substrate would be stimulated by visible emission from a GaN light-emitting diode (LED) grown on one side of the device, and the OSL emission from the substrate (in the blue region of the spectrum) would be detected by the InGaN pi-n diode grown on the other side of the substrate. The primary application of the device would be in space radiation environments. Thus, two major research thrusts were launched during this project. Firstly, research at Oklahoma State University (Dr. Stephen W.S. McKeever and Dr. E.G. Yukihara) concentrated on characterization of the OSL properties of Al2O3:C in radiation fields typical of those experienced in low-Earth orbit. Secondly, research at the University of Washington (Co-Is, Dr. T.G. Stoebe and Dr. T. Chen) focused of device development and GaN/InGaN epitaxial growth. While progress in each line of research has been substantial, the ultimate goal (that of producing a working prototype device) has not yet been reached. We detail the research progress and identify outstanding issues in this paper.

McKeever, S. W. S.↗
NASA NTRS1996

Silicon Carbide Epitaxial Films Studied by Atomic Force Microscopy

Silicon carbide (SiC) holds great potential as an electronic material because of its wide band gap energy, high breakdown electric field, thermal stability, and resistance to radiation damage. Possible aerospace applications of high-temperature, high-power, or high-radiation SiC electronic devices include sensors, control electronics, and power electronics that can operate at temperatures up to 600 C and beyond. Commercially available SiC devices now include blue light-emitting diodes (LED's) and high-voltage diodes for operation up to 350 C, with other devices under development. At present, morphological defects in epitaxially grown SiC films limit their use in device applications. Research geared toward reducing the number of structural inhomogeneities can benefit from an understanding of the type and nature of problems that cause defects. The Atomic Force Microscope (AFM) has proven to be a useful tool in characterizing defects present on the surface of SiC epitaxial films. The in-house High-Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research Center not only extended the dopant concentration range achievable in epitaxial SiC films, but it reduced the concentration of some types of defects. Advanced structural characterization using the AFM was warranted to identify the type and structure of the remaining film defects and morphological inhomogeneities. The AFM can give quantitative information on surface topography down to molecular scales. Acquired, in part, in support of the Advanced High Temperature Engine Materials Technology Program (HITEMP), the AFM had been used previously to detect partial fiber debonding in composite material cross sections. Atomic force microscopy examination of epitaxial SiC film surfaces revealed molecular-scale details of some unwanted surface features. Growth pits propagating from defects in the substrate, and hillocks due, presumably, to existing screw dislocations in the substrates, were imaged. Away from local defects, step bunching was observed to yield step heights of hundreds of angstroms, with possible implications for the uniformity of dopants incorporated in SiC devices during fabrication. The quantitative topographic data from the AFM allow the relevant defect information to be extracted, such as the size and distribution of step bunching and the Burgers vector of screw dislocations. These atomic force microscopy results have furthered the understanding of the dynamic epitaxial SiC growth process. A model describing the observed hillock step bunching has been proposed. This cooperation between researchers involved in crystal growth, electronic device fabrication, and surface structural characterization is likely to continue as atomic force microscopy is used to improve SiC films for high-temperature electronic devices for NASA's advanced turbine engines and space power devices, as well as for future applications in the automotive industry.

Source record↗
NASA NTRS1998

Capillary-Driven Heat Transfer Experiment: Keeping It Cool in Space

Capillary-pumped loops (CPL's) are devices that are used to transport heat from one location to another--specifically to transfer heat away from something. In low-gravity applications, such as satellites (and possibly the International Space Station), CPL's are used to transfer heat from electrical devices to space radiators. This is accomplished by evaporating one liquid surface on the hot side of the CPL and condensing the vapor produced onto another liquid surface on the cold side. Capillary action, the phenomenon that causes paper towels to absorb spilled liquids, is used to "pump" the liquid back to the evaporating liquid surface (hot side) to complete the "loop." CPL's require no power to operate and can transfer heat over distances as large as 30 ft or more. Their reliance upon evaporation and condensation to transfer heat makes them much more economical in terms of weight than conventional heat transfer systems. Unfortunately, they have proven to be unreliable in space operations, and the explanation for this unreliability has been elusive. The Capillary-Driven Heat Transfer (CHT) experiment is investigating the fundamental fluid physics phenomena thought to be responsible for the failure of CPL's in low-gravity operations. If the failure mechanism can be identified, then appropriate design modifications can be developed to make capillary phase-change heat-transport devices a more viable option in space applications. CHT was conducted onboard the Space Shuttle Columbia during the first Microgravity Science Laboratory (MSL-1) mission, STS-94, which flew from July 1 to 17, 1997. The CHT glovebox investigation, which was conceived by Dr. Kevin Hallinan and Jeffrey Allen of the University of Dayton, focused on studying the dynamics associated with the heating and cooling at the evaporating meniscus within a capillary phase-change device in a low-gravity environment. The CHT experimental hardware was designed by a small team of engineers from Aerospace Design & Fabrication (ADF), the NASA Lewis Research Center, and the University of Dayton. The hardware consisted of two experiment modules that each contained an instrumented test loop (idealized capillary-pumped loop), a base unit for power conversion and backlighting, a display unit with 15 LED's (light-emitting diodes) to display temperatures, pressure, heater power, and time, a control unit to select heaters and heater settings, a cooling fan, and associated cables.

Lekan, Jack F.↗
NASA NTRS2001

Atomically Flat Surfaces Developed for Improved Semiconductor Devices

New wide bandgap semiconductor materials are being developed to meet the diverse high temperature, -power, and -frequency demands of the aerospace industry. Two of the most promising emerging materials are silicon carbide (SiC) for high-temperature and high power applications and gallium nitride (GaN) for high-frequency and optical (blue-light-emitting diodes and lasers) applications. This past year Glenn scientists implemented a NASA-patented crystal growth process for producing arrays of device-size mesas whose tops are atomically flat (i.e., step-free). It is expected that these mesas can be used for fabricating SiC and GaN devices with major improvements in performance and lifetime. The promising new SiC and GaN devices are fabricated in thin-crystal films (known as epi films) that are grown on commercial single-crystal SiC wafers. At this time, no commercial GaN wafers exist. Crystal defects, known as screw defects and micropipes, that are present in the commercial SiC wafers propagate into the epi films and degrade the performance and lifetime of subsequently fabricated devices. The new technology isolates the screw defects in a small percentage of small device-size mesas on the surface of commercial SiC wafers. This enables atomically flat surfaces to be grown on the remaining defect-free mesas. We believe that the atomically flat mesas can also be used to grow GaN epi films with a much lower defect density than in the GaN epi films currently being grown. Much improved devices are expected from these improved low-defect epi films. Surface-sensitive SiC devices such as Schottky diodes and field effect transistors should benefit from atomically flat substrates. Also, we believe that the atomically flat SiC surface will be an ideal surface on which to fabricate nanoscale sensors and devices. The process for achieving atomically flat surfaces is illustrated. The surface steps present on the "as-received" commercial SiC wafer is also illustrated. because of the small tilt angle between the crystal "basal" plane and the polished wafer surface. These steps are used in normal SiC epi film growth in a process known as stepflow growth to produce material for device fabrication. In the new process, the first step is to etch an array of mesas on the SiC wafer top surface. Then, epi film growth is carried out in the step flow fashion until all steps have grown themselves out of existence on each defect-free mesa. If the size of the mesas is sufficiently small (about 0.1 by 0.1 mm), then only a small percentage of the mesas will contain an undesired screw defect. Mesas with screw defects supply steps during the growth process, allowing a rough surface with unwanted hillocks to form on the mesa. The improvement in SiC epi surface morphology achievable with the new technology is shown. An atomic force microscope image of a typical SiC commercial epilayer surface is also shown. A similar image of an SiC atomically flat epi surface grown in a Glenn laboratory is given. With the current screw defect density of commercial wafers (about 5000 defects/cm2), the yield of atomically free 0.1 by 0.l mm mesas is expected to be about 90 percent. This is large enough for many types of electronic and optical devices. The implementation of this new technology was recently published in Applied Physics Letters. This work was initially carried out in-house under a Director's Discretionary Fund project and is currently being further developed under the Information Technology Base Program.

Powell, J. Anthony↗
NASA NTRS2003

Improved Silicon Carbide Crystals Grown From Atomically Flat Surfaces

The NASA Glenn Research Center is demonstrating that atomically flat (i.e., step-free) silicon carbide (SiC) surfaces are ideal for realizing greatly improved wide bandgap semiconductor films with lower crystal defect densities. Further development of these improved films could eventually enable harsh-environment electronics beneficial to jet engine and other aerospace and automotive applications, as well as much more efficient and compact power distribution and control. The technique demonstrated could also improve blue-light lasers and light-emitting-diode displays.

Neudeck, Philip G.↗
NASA NTRS1995

Applications of Silicon Carbide for High Temperature Electronics and Sensors

Silicon carbide (SiC) is a wide bandgap material that shows great promise in high-power and high temperature electronics applications because of its high thermal conductivity and high breakdown electrical field. The excellent physical and electronic properties of SiC allows the fabrication of devices that can operate at higher temperatures and power levels than devices produced from either silicon or GaAs. Although modern electronics depends primarily upon silicon based devices, this material is not capable of handling may special requirements. Devices which operate at high speeds, at high power levels and are to be used in extreme environments at high temperatures and high radiation levels need other materials with wider bandgaps than that of silicon. Many space and terrestrial applications also have a requirement for wide bandgap materials. SiC also has great potential for high power and frequency operation due to a high saturated drift velocity. The wide bandgap allows for unique optoelectronic applications, that include blue light emitting diodes and ultraviolet photodetectors. New areas involving gas sensing and telecommunications offer significant promise. Overall, the properties of SiC make it one of the best prospects for extending the capabilities and operational regimes of the current semiconductor device technology.

Silicon Carbide↗